CN111509089A - 一种双面太阳能电池及其制作方法 - Google Patents
一种双面太阳能电池及其制作方法 Download PDFInfo
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- CN111509089A CN111509089A CN202010357499.7A CN202010357499A CN111509089A CN 111509089 A CN111509089 A CN 111509089A CN 202010357499 A CN202010357499 A CN 202010357499A CN 111509089 A CN111509089 A CN 111509089A
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- silicon wafer
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 128
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 128
- 239000010703 silicon Substances 0.000 claims abstract description 128
- 238000002161 passivation Methods 0.000 claims abstract description 52
- 238000009792 diffusion process Methods 0.000 claims abstract description 48
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000011521 glass Substances 0.000 claims abstract description 18
- 238000007747 plating Methods 0.000 claims abstract description 18
- 239000003513 alkali Substances 0.000 claims abstract description 13
- 239000002243 precursor Substances 0.000 claims abstract description 10
- 238000004140 cleaning Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 55
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 11
- 239000011574 phosphorus Substances 0.000 claims description 11
- 229910052698 phosphorus Inorganic materials 0.000 claims description 11
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 230000004075 alteration Effects 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 22
- 239000012670 alkaline solution Substances 0.000 description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000009776 industrial production Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202010357499.7A CN111509089B (zh) | 2020-04-29 | 2020-04-29 | 一种双面太阳能电池及其制作方法 |
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CN202010357499.7A CN111509089B (zh) | 2020-04-29 | 2020-04-29 | 一种双面太阳能电池及其制作方法 |
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CN111509089A true CN111509089A (zh) | 2020-08-07 |
CN111509089B CN111509089B (zh) | 2022-10-25 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113488384A (zh) * | 2021-06-28 | 2021-10-08 | 泰州隆基乐叶光伏科技有限公司 | 一种太阳能电池及其制造方法 |
CN114843368A (zh) * | 2022-04-29 | 2022-08-02 | 通威太阳能(眉山)有限公司 | 太阳电池及其制备方法和应用 |
CN115719780A (zh) * | 2022-12-05 | 2023-02-28 | 滁州捷泰新能源科技有限公司 | 一种太阳能电池及其制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107863419A (zh) * | 2017-11-02 | 2018-03-30 | 国家电投集团西安太阳能电力有限公司 | 一种双面perc晶体硅太阳能电池的制备方法 |
CN110299432A (zh) * | 2019-07-02 | 2019-10-01 | 浙江晶科能源有限公司 | 一种n型双面电池的制备方法 |
CN110534595A (zh) * | 2019-09-06 | 2019-12-03 | 江西展宇新能源股份有限公司 | 一种perc双面太阳能电池及其制备方法 |
-
2020
- 2020-04-29 CN CN202010357499.7A patent/CN111509089B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107863419A (zh) * | 2017-11-02 | 2018-03-30 | 国家电投集团西安太阳能电力有限公司 | 一种双面perc晶体硅太阳能电池的制备方法 |
CN110299432A (zh) * | 2019-07-02 | 2019-10-01 | 浙江晶科能源有限公司 | 一种n型双面电池的制备方法 |
CN110534595A (zh) * | 2019-09-06 | 2019-12-03 | 江西展宇新能源股份有限公司 | 一种perc双面太阳能电池及其制备方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113488384A (zh) * | 2021-06-28 | 2021-10-08 | 泰州隆基乐叶光伏科技有限公司 | 一种太阳能电池及其制造方法 |
CN113488384B (zh) * | 2021-06-28 | 2022-09-02 | 西安隆基乐叶光伏科技有限公司 | 一种太阳能电池及其制造方法 |
WO2023273313A1 (zh) * | 2021-06-28 | 2023-01-05 | 西安隆基乐叶光伏科技有限公司 | 一种太阳能电池及其制造方法 |
CN114843368A (zh) * | 2022-04-29 | 2022-08-02 | 通威太阳能(眉山)有限公司 | 太阳电池及其制备方法和应用 |
CN114843368B (zh) * | 2022-04-29 | 2024-03-29 | 通威太阳能(成都)有限公司 | 太阳电池及其制备方法和应用 |
CN115719780A (zh) * | 2022-12-05 | 2023-02-28 | 滁州捷泰新能源科技有限公司 | 一种太阳能电池及其制作方法 |
CN115719780B (zh) * | 2022-12-05 | 2024-01-12 | 滁州捷泰新能源科技有限公司 | 一种太阳能电池及其制作方法 |
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Address after: No.1335 Bin'an Road, Binjiang District, Hangzhou City, Zhejiang Province Applicant after: CHINT SOLAR (ZHEJIANG) Co.,Ltd. Applicant after: Zhengtai Xinneng Technology Co.,Ltd. Address before: No.1335 Bin'an Road, Binjiang District, Hangzhou City, Zhejiang Province Applicant before: CHINT SOLAR (ZHEJIANG) Co.,Ltd. Applicant before: HAINING ASTRONERGY TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20220617 Address after: 314400 No. 1 Jisheng Road, Jiaxing City, Zhejiang Province, Jianshan New District, Haining City Applicant after: Zhengtai Xinneng Technology Co.,Ltd. Address before: No.1335 Bin'an Road, Binjiang District, Hangzhou City, Zhejiang Province Applicant before: CHINT SOLAR (ZHEJIANG) Co.,Ltd. Applicant before: Zhengtai Xinneng Technology Co.,Ltd. |
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Address after: 314400 No. 1 Jisheng Road, Jiaxing City, Zhejiang Province, Jianshan New District, Haining City Patentee after: Zhengtai Xinneng Technology Co.,Ltd. Address before: 314400 No. 1 Jisheng Road, Jiaxing City, Zhejiang Province, Jianshan New District, Haining City Patentee before: Zhengtai Xinneng Technology Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder |