CN111505902A

CN111505902A - Photoresist composition and preparation method thereof

Info

Publication number: CN111505902A
Application number: CN202010460924.5A
Authority: CN
Inventors: 胡凡华; 卢克军; 朴大然; 张腾; 何卿
Original assignee: Beijing Asashi Electronic Materials Co ltd; BOE Technology Group Co Ltd
Current assignee: Beijing Asashi Electronic Materials Co ltd
Priority date: 2020-05-27
Filing date: 2020-05-27
Publication date: 2020-08-07
Anticipated expiration: 2040-05-27
Also published as: CN111505902B

Abstract

The invention discloses a photoresist composition and a preparation method thereof. The photoresist composition includes a phenolic resin composition, a photosensitive compound, and an organic solvent. Wherein the phenolic resin composition comprises: a first linear phenolic resin, a second linear phenolic resin, and a third linear phenolic resin. The first linear phenolic resin has higher photosensitivity, and the second linear phenolic resin and the third linear phenolic resin have higher heat resistance temperature. The three phenolic resins are matched with each other and have synergistic effect, so that the photoresist composition has higher heat resistance temperature and higher light sensitivity.

Description

Photoresist composition and preparation method thereof

Technical Field

The invention relates to the technical field of display, in particular to a photoresist composition and a preparation method thereof.

Background

Photolithography is a common process for making fine patterns. When a fine pattern is formed by using a photolithography process, a film layer to be etched and a photoresist layer (also referred to as a photoresist) are sequentially formed on a substrate, and then the photoresist layer is sequentially subjected to exposure, development and other processes to obtain a desired photoresist pattern. Then, taking the photoresist pattern as a mask (namely a protective layer), etching the region of the surface of the film layer to be etched, which is exposed by the photoresist pattern, so as to remove the part of the film layer to be etched, which is positioned in the region; and after the residual photoresist pattern is stripped, a substrate pattern consistent with the photoresist pattern can be formed on the film layer to be etched.

Disclosure of Invention

The invention aims to provide a photoresist composition and a preparation method thereof, which are used for enabling the photoresist composition to have higher heat resistance temperature and higher light sensitivity.

In order to achieve the purpose, the invention adopts the following technical scheme:

in a first aspect, the present invention provides a photoresist composition. The photoresist composition comprises: a phenolic resin composition, a photosensitive compound and an organic solvent.

The phenolic resin composition comprises: a first linear phenolic resin, a second linear phenolic resin and a third linear phenolic resin; wherein the content of the first and second substances,

the structural general formula of the first linear phenolic resin is (formula 1):

the structural general formula of the second linear phenolic resin is shown as a formula (2):

the structural general formula of the third linear phenolic resin is shown as a formula (3):

wherein n is₁，n₂And n₃Are all positive integers, and n₁The value of (a) is in the range of 15 to 60, n₂The value of (A) is in the range of 20 to 200; n is₃The value of (1) is in the range of 20 to 400.

Illustratively, the mass of the first linear phenolic resin accounts for 10-50% of the total mass of the phenolic resin composition;

the mass of the second linear phenolic resin accounts for 10-50% of the total mass of the phenolic resin composition;

the third linear phenolic resin accounts for 10-50% of the total mass of the phenolic resin composition.

Specifically, the mass ratio of the first linear phenolic resin to the second linear phenolic resin is (1-2): 2; and/or the presence of a gas in the gas,

the mass ratio of the first linear phenolic resin to the third linear phenolic resin is (1-2): 2.

illustratively, the general structural formula of the photoactive compound is formula (4):

wherein R is₁，R₂、R₃And R₄Wherein any of at least three is represented by the formula (5) or (6), and the remainder is a hydrogen atom;

specifically, the R is₁、R₂、R₃And R₄At least three of them have the structural formula (5), and the rest are hydrogen atoms.

As an example, the photoresist composition further includes an additive;

the mass of the phenolic resin composition accounts for 10-20% of the total mass of the photoresist composition;

the photosensitive compound accounts for 1-10% of the total weight of the photoresist composition;

the organic solvent accounts for 70-85% of the total weight of the photoresist composition;

the additive accounts for 1.5-10.5% of the total weight of the photoresist composition.

Specifically, the additive comprises at least one of a sensitizer, a leveling agent and an adhesion promoter.

When the additive comprises a sensitizer, a leveling agent and an adhesion promoter, the mass of the sensitizer accounts for 20-70% of the total mass of the additive;

the mass of the leveling agent accounts for 1-10% of the total mass of the additive;

the mass of the adhesion promoter accounts for 20-35% of the total mass of the additive.

Further preferably, the kind of the additive is selected from at least one of the following:

the structural formula of the sensitizer in the additive is formula (7):

the leveling agent in the additive comprises at least one of an organic silicon leveling agent and a fluorine-containing surfactant;

the adhesion promoter in the additive comprises at least one of melamine resin, a silane coupling agent and an ultra-high molecular vinyl ether compound.

Preferably, the organic solvent includes at least one of propylene glycol methyl ether acetate, ethylene glycol monomethyl ether, propylene glycol monomethyl ether, diethylene glycol dimethyl ether, ethyl lactate, ethyl acetate, N-butyl acetate, and N-methylpyrrolidone.

Further preferably, the organic solvent is propylene glycol methyl ether acetate.

In a second aspect, the present invention provides a method of preparing a photoresist composition. The preparation method of the photoresist composition comprises the following steps:

mixing the phenolic resin composition, a photosensitive compound and an organic solvent to obtain a photoresist composition; wherein the content of the first and second substances,

the phenolic resin comprises: a first linear phenolic resin, a second linear phenolic resin, and a third linear phenolic resin.

The structural general formula of the first linear phenolic resin is shown as a formula (1):

the structural general formula of the third linear phenolic resin is (formula 3):

Based on the above, the photoresist composition provided by the invention has three linear phenolic resins, wherein the monomers of the first linear phenolic resin have p-methyl, so that the first linear phenolic resin has higher sensitivity. The monomer of the second linear phenolic resin has three benzene rings, and the bond energy of the benzene rings is larger, so that the second linear phenolic resin has higher heat resistance. The tertiary linear phenolic resin has four methyl groups, so that the tertiary linear phenolic resin has higher heat resistance. The three linear phenolic resins are matched with each other and have synergistic effect, so that the photoresist composition has higher heat resistance temperature and higher light sensitivity. The higher heat-resisting temperature can avoid the phenomenon of softening and flowing of the photoresist layer during etching, thereby ensuring that the line size of the photoresist graph obtained by photoetching is the same as or basically the same as that of the mask graph. Meanwhile, the higher light sensitivity enables the energy required by the photoresist layer during exposure to be smaller, and the photoetching efficiency can be improved.

Drawings

The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiment(s) of the invention and together with the description serve to explain the invention without limiting the invention. In the drawings:

FIG. 1 is a flow chart of a related art process for transferring a circuit pattern to a film layer to be etched by a photolithography process;

FIG. 2 is a diagram showing a mechanism of photodecomposition of a positive photoresist in the related art;

FIG. 3 is a flow chart of a method for patterning a photoresist according to an embodiment of the present invention;

FIG. 4 is a flow chart of a method for patterning a substrate according to an embodiment of the present invention;

FIG. 5 shows the results of a heat resistance test of a photoresist layer made from the photoresist composition provided in example 1 of the present invention;

FIG. 6 is a heat resistance test result of a photoresist pattern made from the photoresist composition provided in example 2 of the present invention;

FIG. 7 shows the results of a heat resistance test of a photoresist pattern formed from the photoresist composition provided in example 3 of the present invention;

FIG. 8 is a heat resistance test result of a photoresist pattern made from the photoresist composition provided in example 4 of the present invention;

FIG. 9 shows the results of a heat resistance test of a photoresist pattern formed from the photoresist composition provided in example 5 of the present invention;

FIG. 10 shows the results of a heat resistance test of a photoresist pattern formed from the photoresist composition provided in example 6 of the present invention;

FIG. 11 is a heat resistance test result of a photoresist pattern prepared from the photoresist composition provided in comparative example 1;

FIG. 12 is a heat resistance test result of a photoresist pattern prepared from the photoresist composition provided in comparative example 2; and

FIG. 13 shows the results of a heat resistance test of a photoresist pattern prepared from the photoresist composition provided in comparative example 3.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

Photolithography is a common method of making fine patterns. Taking the structure of a signal line, an electrode (such as an electrode in a transistor or an electrode in a capacitor) and the like in an integrated circuit as an example, a film layer to be etched is formed on the surface of a single chip or a dielectric layer, a circuit pattern can be transferred to the film layer (such as a metal layer) to be etched through a photoetching process, and then the film layer to be etched is etched through an etching process (such as dry etching or wet etching), so that a structure consistent with the circuit pattern can be formed on the surface of the crystal or the dielectric layer.

Photoresists are the basic material for lithographic processes. The photoresist refers to a material which can significantly change the solubility, the adhesion and the melting property under the action of light. Photoresists can be classified into positive photoresists and negative photoresists according to their chemical reaction mechanism and development principle. The exposed region of the positive photoresist can undergo photolysis reaction, so that the photoresist is degraded into substances capable of being dissolved in a developing solution, and the non-exposed region of the photoresist can form a photoresist pattern which is the same as or basically the same as that of a mask plate (namely, a pattern of a light-transmitting region on the mask plate). The exposed area of the negative photoresist can generate a crosslinking reaction and can not be dissolved in a developing solution, and the non-exposed area can be dissolved in the developing solution, so that a photoresist pattern complementary or basically complementary with a mask pattern can be obtained.

By way of example, fig. 1 shows a flow chart of a related art method for transferring a circuit pattern onto a film layer to be etched by using a photolithography process. Referring to fig. 1, transferring a circuit pattern to a film layer to be etched using a photolithography process includes steps 10 to 14(S10 to S14):

s10: as shown in a in fig. 1, a photoresist layer is formed on a film layer to be etched, specifically: and coating the photoresist composition on the film layer to be etched, and then carrying out soft drying on the photoresist composition to form a photoresist layer on the film layer to be etched.

S11: as shown in fig. 1B, a Mask (Mask) is aligned with a film layer to be etched, and the photoresist layer is exposed using Ultraviolet (UV) light.

It should be noted that if the photoresist is a positive photoresist, the pattern of the mask plate should be the same as the circuit pattern, and if the photoresist is a negative photoresist, the pattern of the mask plate should be complementary to the circuit pattern.

S12: and removing the portions of the photoresist layer exposed or not exposed to the UV light using a developing solution, thereby forming a photoresist pattern.

In this case, if the photoresist is a positive photoresist, as shown by C in FIG. 1₁As shown, the portion of the photoresist layer exposed to UV light may be removed using a developing solution, and the formed photoresist pattern is the same as or substantially the same as the mask pattern, thereby making the photoresist pattern the same as or substantially the same as the circuit pattern.

If the photoresist is a negative photoresist, as shown by C in FIG. 1₂As shown, the portions of the photoresist layer not exposed to UV light may be removed using a developing solution to form photoresist patterns complementary or substantially complementary to the mask patterns, thereby making the photoresist patterns identical or substantially identical to the circuit patterns.

S13: and etching the part exposed by the photoresist pattern on the surface of the film layer to be etched to remove the part in the area in the film layer to be etched.

In this case, if the photoresist is a positive photoresist, D in FIG. 1₁As shown, the etched portion of the film layer to be etched is the same as or substantially the same as the mask pattern, so that the etched portion of the film layer to be etched is the same as or substantially the same as the circuit pattern.

If the photoresist is a negative photoresist, D in FIG. 1₂And as shown, the etched part of the film layer to be etched is complementary or basically complementary to the pattern of the mask plate, so that the etched part of the film layer to be etched is the same or basically the same as the circuit pattern.

Step S14: and after the residual photoresist pattern is stripped, the structure after the film layer etching which is the same as or basically the same as the pattern of the mask plate can be formed.

In this case, if the photoresist is a positive photoresist, e.g. FIG. 1E₁The structure of the etched film layer is the same as or substantially the same as the pattern of the mask plate, i.e., the structure of the etched film layer is the same as or substantially the same as the pattern of the circuit.

If the photoresist is a negative photoresist, e.g. FIG. 1₂The structure after the film layer is etched is complementary or basically complementary with the pattern of the mask plate, namely the structure after the film layer is etched is complementary or basically complementary with the circuit pattern.

At present, circuit patterns are widely transferred onto a Film layer to be etched by a photolithography process in the production of an integrated circuit in a Thin Film Transistor liquid crystal display (Thin Film Transistor display, abbreviated as TFT-L CD display), and, in the photolithography process involved in the production of the TFT-L CD display, a positive photoresist having a phenolic resin as a Film-forming resin (i.e., a resin having a Film-forming property) and a diazonaphthoquinone derivative as a photosensitizer is used as a mainstream photoresist used in the fabrication process of the TFT-L CD display FIG. 2 shows a decomposition mechanism diagram of the positive photoresist in the related art, referring to FIG. 2, diazo groups (N-diazo groups in the diazonaphthoquinone derivative under Ultraviolet (UV) irradiation conditions₂C ═ can form highly reactive carbene groups, with nitrogen evolution. The two electrons in the outermost carbon atom of the carbene group do not participate in the bonding, so that the carbene group is susceptible to a Wolff rearrangement reaction (i.e., Wolff rearrangement) to form an enone (C ═ O). Ketene can rapidly react with water in the environment to generate hydrophilic indene acid as indicated by a dotted line frame A in FIG. 2, so that the exposed positive photoresist can be dissolved in a developing solution (such as a dilute alkali solution), thereby forming a photoresist pattern which is the same as or substantially the same as that of the mask pattern.

However, when a circuit pattern is transferred using the positive photoresist, the heat-resistant temperature of the positive photoresist is low. The temperature requirement for etching the film layer to be etched is high, and the temperature of the film layer to be etched generally needs to be raised to the temperature required for etching. When the temperature of the film layer to be etched exceeds the heat-resistant temperature (i.e., the glass transition temperature) of the photoresist, the photoresist layer on the surface of the etched film layer is softened and flows, so that the difference between the line size of the photoresist pattern and the originally designed Critical Dimension (CD) is large, and further the difference between the line size of the structure after the film layer on the surface of the crystal or dielectric layer is etched and the critical dimension of the designed circuit pattern is large. At this time, the obtained integrated circuit has large electrical performance fluctuation, even exceeding the control range, and the yield of the integrated circuit is low.

In order to solve the above problem, one way in the related art is to prevent the temperature of the substrate from being higher than the heat-resistant temperature of the photoresist by adjusting the etching process, so as to avoid the phenomenon of softening and flowing of the photoresist. However, the adjusted etching process is difficult to achieve a preset etching effect, and the etching efficiency is also affected, so that the production efficiency of the integrated circuit is reduced, and further the production efficiency of the display is reduced.

Another way is to increase the resist heat temperature by increasing the molecular weight of the phenolic resin in the resist composition. However, as the molecular weight of the phenolic resin increases, the sensitivity of the phenolic resin gradually decreases, resulting in an increase in the energy required to expose the photoresist layer. At this time, the exposure efficiency of the photoresist during photolithography is reduced, resulting in a reduction in the yield of the integrated circuit.

Based on this, some embodiments of the present invention provide a photoresist composition to ensure that the photoresist has higher heat resistance temperature and higher photosensitivity. The photoresist composition includes a phenolic resin composition, a photosensitive compound, and an organic solvent.

It is understood that the organic solvent is mainly used to make the formed photoresist composition in a liquid state, thereby allowing the photoresist composition to have good coating properties. The kind of the organic solvent is not limited herein as long as the organic solvent can dissolve the phenolic resin composition and the photosensitive compound. Meanwhile, the mass percentage of the organic solvent in the mass of the photoresist composition is not limited herein, as long as the formed photoresist composition is in a liquid state and the photoresist composition is ensured to have good coating performance.

The photosensitive compound has photosensitive characteristics and can generate chemical reaction after exposure, so that the photoresist composition can be dissolved in a developing solution. The type of photosensitive compound and the mass fraction of the photosensitive compound in the photoresist composition are not limited herein, as long as the photosensitive compound can undergo a chemical reaction after exposure to allow the photoresist layer to be dissolved in a developer.

The phenolic resin composition comprises: a first linear phenolic resin (which may also be referred to as a plain phenolic resin), a second linear phenolic resin, and a third linear phenolic resin.

Wherein the structural general formula of the first linear phenolic resin is shown as a formula (1):

The polymerization degree n of the first linear phenol resin₁15 to 60, therefore, the first linear phenolic aldehydeThe molecular weight of the resin is 2000-7000. At this time, the molecular weight of the first linear phenol resin is small as a whole, so that the sensitivity of the first linear phenol resin is high. Meanwhile, the monomers of the first linear phenolic resin have p-methyl, so that the sensitivity of the first linear phenolic resin can be further improved, and the first linear phenolic resin has higher sensitivity.

Degree of polymerization n of the second linear phenol resin₂The molecular weight of the second linear phenolic resin is 3000-32000, because the molecular weight is 20-200. At this time, the second linear phenolic resin has a higher molecular weight, so that the second linear phenolic resin has a higher heat resistance temperature. Meanwhile, the monomer of the second linear phenolic resin has three benzene rings, and the bond energy of the benzene rings is larger, so that the heat-resistant temperature of the second linear phenolic resin can be further improved, and the second linear phenolic resin has higher heat-resistant temperature.

Degree of polymerization n of third linear phenol resin₃The value range of (a) is 20-400, so that the molecular weight of the third linear phenolic resin is 3000-48000. At this time, the tertiary phenol resin has a higher molecular weight so that the tertiary phenol resin has a higher heat-resistant temperature. Meanwhile, the monomer of the third linear phenolic resin has four methyl groups, so that the heat-resistant temperature of the third linear phenolic resin can be further improved, and the third linear phenolic resin has higher heat-resistant temperature.

In the phenolic resin composition, the first linear phenolic resin, the second linear phenolic resin and the third linear phenolic resin are matched with each other and have a synergistic effect, so that the photoresist composition has higher heat resistance temperature and higher sensitivity.

Therefore, when the photoresist layer is used as a protective layer and the photoresist pattern exposed area on the substrate is etched, the photoresist composition has higher heat-resistant temperature, so that the photoresist layer obtained by soft-drying the photoresist composition also has higher heat-resistant temperature. Therefore, when the temperature of the film layer to be etched is raised to the temperature required by etching, the photoresist layer is not softened and flows, and the deviation between the line size of the structure after the film layer is etched and the critical size of the originally designed circuit pattern is smaller. In this case, the stability of the electrical properties of the integrated circuit is good, so that the yield of the display substrate can be improved.

Meanwhile, the photoresist composition has higher light sensitivity, so that the energy required by the photoresist during exposure is less, the photoetching efficiency can be improved, and the production efficiency of an integrated circuit and a display device can be improved.

Based on this, the present invention provides a photoresist composition. The phenolic resin of the photoresist composition comprises the first linear phenolic resin, the second linear phenolic resin and the third linear phenolic resin, so that the photoresist composition provided by the embodiment of the invention has higher heat resistance temperature and higher light sensitivity, can improve the stability of the electrical property of an integrated circuit and the productivity of the integrated circuit, and can improve the yield and the productivity of a display panel.

And, the price of the first linear phenolic resin is low, so that the production cost of the photoresist composition can be reduced.

In some examples, the first linear phenolic resin comprises 10% to 50% of the total weight of the phenolic resin. For example: the first phenolic novolac resin is present in an amount of 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45% or 50% by weight of the total phenolic resin.

The second linear phenolic resin accounts for 10-50% of the total weight of the phenolic resin. For example: the second novolac resin may comprise 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45% or 50% by weight of the total phenolic resin.

The third linear phenolic resin accounts for 10-50% of the total weight of the phenolic resin. For example: the second novolac resin may comprise 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45% or 50% by weight of the total phenolic resin.

Specifically, in the phenolic resin, the mass ratio of the first linear phenolic resin to the second linear phenolic resin is as follows: (1-2): 2. for example: the mass ratio of the first linear phenolic resin to the second linear phenolic resin is 1: 2. 1.5: 2 or 2: 2.

the mass ratio of the first linear phenolic resin to the third linear phenolic resin is as follows: (1-2): 2. for example: the mass ratio of the first linear phenolic resin to the third linear phenolic resin is 1: 2. 1.6: 2 or 2: 2.

as a possible implementation manner, on the basis of the above, the structural general formula of the photosensitive compound is formula (4):

the photoresist composition is a positive photoresist, which is not dissolved in a developer before exposure, and after exposure, a portion exposed to light is changed in chemical properties and can be dissolved in a developer to be removed.

In this case, since R₁，R₂、R₃And R₄Any one of the at least three groups is a first group or a second group, and the first group and the second group both have diazo groups, so that the photosensitive compound provided by the embodiment of the invention can be converted into hydrophilic indene acid under the ultraviolet illumination condition, so that a photoresist layer formed by the photoresist composition can form a photoresist pattern identical to that of a mask plate under the illumination condition.

At the same time, since R₁，R₂、R₃And R₄Wherein at least three of the compounds have a structural formula of formula (5) or formula (6), and the balance are hydrogen atoms, and each of formula (5) and formula (6) has a benzene ring, and thus embodiments of the present invention provideThe photosensitive compound has 5 benzene rings in the monomer, so that the photosensitive compound has higher heat-resistant temperature, and the heat-resistant temperature of the photoresist composition can be further improved.

In particular, R₁、R₂、R₃And R₄At least three of the structural formulas are all the formula (5), and the rest are hydrogen atoms. The steric hindrance of the structural formula in the formula (5) is small, so that the photosensitive compound has better solubility, and the uniformity of the photoresist layer can be improved.

As a possible implementation, the above phenolic resin composition further comprises an additive.

It is to be understood that the above additives are mainly used to adjust properties such as photosensitivity or uniformity of the photoresist composition. Here, the kind of the additive is not limited as long as the performance of the photoresist composition can be improved.

Under the condition that the photoresist composition comprises the additive, the proportion of the components in the photoresist composition is as follows:

the mass of the phenolic resin composition accounts for 10-20% of the total mass of the photoresist composition. For example: the mass of the phenolic resin composition accounts for 10%, 12%, 14%, 16%, 18% or 20% of the total mass of the photoresist composition.

The mass of the photosensitive compound accounts for 1-10% of the total mass of the photoresist composition. For example: the photosensitive compound accounts for 1%, 3%, 5%, 7%, 9%, or 10% by mass of the total mass of the photoresist composition.

The mass of the organic solvent accounts for 70-85% of the total mass of the photoresist composition. For example: the mass of the organic solvent accounts for 70%, 75%, 80% or 85% of the total mass of the photoresist composition.

The mass of the additive accounts for 1.5-10.5% of the total mass of the photoresist composition. For example: the mass of the additive is 1.5%, 3.5%, 5.5%, 6%, 7.5%, 8.5%, or 10.5% of the total mass of the photoresist composition.

Illustratively, the additive includes at least one of a sensitizer, a leveling agent, and an adhesion promoter.

The sensitizer trims the sensitivity of the photoresist composition, thereby further improving the sensitivity of the photoresist formed by the photoresist composition. The sensitizer may be selected according to actual conditions, and is not limited as long as it has high sensitivity.

The leveling agent can reduce the surface tension among the phenolic resin, the photosensitive compound and the organic solvent in the photoresist composition, so that the phenolic resin composition and the photosensitive compound can be more uniformly dispersed in the organic solvent. In this case, the photoresist layer coated with the photoresist composition has a uniform distribution of the phenolic resin composition and the photosensitive compound, and thus can prevent the occurrence of spots or linear marks in the photoresist layer. The kind of the leveling agent may be selected according to the actual circumstances, as long as the surface tension of the phenolic resin composition, the photosensitive compound and the organic solvent can be reduced.

The adhesion promoter can improve the binding force between the photoresist composition and the film layer to be etched, so that the photoresist layer can be stably attached to the surface of the film layer to be etched. It should be noted that the kind of the adhesion promoter may be selected according to actual situations, as long as the bonding force between the photoresist composition and the film layer to be etched can be improved, and is not specifically limited herein.

Specifically, when the additive comprises a sensitizer, a leveling agent and an adhesion promoter, the mass of the sensitizer accounts for 20-70% of the total mass of the additive. For example: the mass of the sensitizer accounts for 20%, 30%, 45%, 60% or 70% of the total mass of the additive.

The mass of the flatting agent accounts for 1-10% of the total mass of the additive. For example: the mass of the leveling agent accounts for 1%, 3%, 5%, 6.5%, 8 or 101% of the total mass of the additive.

The mass of the adhesion promoter accounts for 20-35% of the total mass of the additive. For example: the adhesion promoter comprises 20%, 23%, 26%, 29%, 32% or 35% of the total mass of the photoresist composition.

Specifically, the kind of the additive is selected from at least one of the following:

the structural formula of the sensitizer in the additive is shown as formula (7):

the leveling agent in the additive comprises at least one of an organic silicon leveling agent and a fluorine-containing surfactant.

The specific type of the silicone leveling agent and the specific type of the fluorosurfactant are not limited herein, as long as the surface tension of the phenolic resin, the photosensitive compound, and the organic solvent in the photoresist composition can be reduced. For example: the silicone leveling agent may be any one of silicone oil and polydimethylsiloxane. The above-mentioned fluorine-containing surfactant may be perfluorooctylsulfonyl fluoride (molecular formula C)₈F₁₈SO₂F) Perfluorooctyl sulfonyl quaternary ammonium iodide (molecular formula C)₈F₁₇SO₂HN(CH₂)₃N(CH₃)₃I) Any of the above.

The adhesion promoter in the additive comprises at least one of melamine resin, silane coupling agent and ultra-high molecular weight vinyl ether compound, wherein the relative molecular mass of the ultra-high molecular weight vinyl ether compound is more than 1 × 10⁶The vinyl ether compound of (1). The types of the silane coupling agent and the ultra-high molecular weight vinyl ether compound are not limited herein, as long as the bonding force between the photoresist composition and the film layer to be etched can be improved. For example: the silane coupling agent may be vinyltriacetoxysilane (molecular formula CH)₂CHSi(OCOCH₃)₃) Gamma-aminopropyl trimethoxy silane (molecular formula is H)₂NCH₂CH₂CH₂SI(OCH₃)₃) And vinyltrichlorosilane (molecular formula CH)₂CHSiCl₃) At least one of them. The ultra-high molecular weight vinyl ether compound may be at least one of polymethyl vinyl ether, polyethyl vinyl ether and poly octadecyl vinyl ether.

In some examples, the organic solvent is any one of ethylene glycol monomethyl ether, propylene glycol monomethyl ether, diethylene glycol dimethyl ether, propylene glycol methyl ether acetate, ethyl lactate, ethyl acetate, N-butyl acetate, and N-methylpyrrolidone. The organic solvent is selected to have better solubility and coating performance, so that the phenolic resin and the photosensitive compound in the photoresist composition are more uniformly dissolved in the organic solvent, and the photosensitive compound and the phenolic resin composition in a photoresist layer formed by the photoresist composition are more uniformly distributed.

Specifically, the organic solvent is propylene glycol methyl ether acetate. Propylene glycol methyl ether acetate is an environment-friendly solvent with multiple functional groups, and can reduce pollution in the photoetching process.

In some embodiments of the invention, a method of preparing a photoresist composition is also provided. The preparation method of the photoresist composition comprises the following steps:

the phenolic resin composition, the photosensitive compound and the organic solvent are mixed to obtain the photoresist composition.

Wherein the phenolic resin composition comprises: a first linear phenolic resin, a second linear phenolic resin, and a third linear phenolic resin. The structural general formula of the first linear phenolic resin is shown as a formula (1):

It should be noted that, since the natural light includes UV light, in order to avoid that the photosensitive compound is subjected to a chemical reaction by the UV light during the mixing process of the phenolic resin composition, the photosensitive compound and the organic solvent, thereby affecting the chemical stability of the photoresist composition formed after the above-mentioned respective combinations are mixed, in some embodiments, the above-mentioned respective components are mixed in an environment without UV light. For example, the phenolic resin composition, the photosensitive compound, and the organic solvent are mixed in a yellow light environment.

The order, mixing time and mixing temperature of mixing the above phenolic resin composition, photosensitive compound and organic solvent are not limited herein, as long as the phenolic resin composition and photosensitive compound can be uniformly dispersed in the organic solvent. For example: the phenolic resin composition, the photosensitive compound and the organic solvent are mixed for 12 to 16 hours at the temperature of between 45 and 50 ℃ by adopting a stirring mode, and then the phenolic resin composition and the photosensitive compound can be uniformly dispersed in the organic solvent.

For example, when the phenolic resin composition, the photosensitive compound and the organic solvent are mixed, the phenolic resin composition and the photosensitive compound may be simultaneously added to the organic solvent, and after the mixture is uniformly stirred, the additive may be added.

In some embodiments of the present invention, a method of patterning a photoresist is also provided. Referring to fig. 3, the patterning method includes steps 20 to 22(S20 to S22):

step S20: and forming a photoresist layer on the surface of the substrate.

Step S21: and exposing the photoresist layer by using a mask plate.

Step S22: and developing the exposed photoresist layer to obtain a photoresist pattern.

The beneficial effects of the photoresist patterning method provided by the embodiment of the invention are the same as those of the photoresist composition, and are not repeated herein.

In some examples, in S20, the photoresist composition is coated on the surface of the substrate, and then the photoresist composition is dried, so that the photoresist layer can be formed on the surface of the substrate.

Specifically, the photoresist is coated on the surface of the substrate by spin coating.

When the photoresist composition is dried, the substrate coated with the photoresist composition is first vacuum-dried (VCD), and then the vacuum-dried substrate coated with the photoresist composition is baked at a temperature of 110 ℃ for 90 seconds (90 s).

Illustratively, in S21, the photoresist layer is exposed using a mixed light source of H-line, I-line and G-line. Wherein the wavelength of the H line is 365 nm. The wavelength of the I line is 436 nm. The wavelength of the G line is 405 nm. The mixed light source of the H line, the I line and the G line can be used for exposing the photoresist layer at different wavelengths, so that the photoresist layer is more uniformly exposed.

In S22, the exposed photoresist layer is developed with a 2.38 w% tetramethylammonium hydroxide (TMAH) as a developing solution for 1 min. And then washing the developed photoresist layer with water for 25s, and drying to remove the exposed part to obtain the photoresist pattern.

In some embodiments of the present invention, a method of patterning a substrate is also provided. Referring to FIG. 4, the method for patterning a substrate includes steps 30 to 33(S30 to S33):

s30: and forming a photoresist layer on the surface of the substrate. Wherein the photoresist layer is composed of the photoresist composition or the photoresist composition prepared by the preparation method of the photoresist composition.

S31: and exposing the photoresist layer by using a mask plate.

S32: and developing the exposed photoresist layer to obtain a photoresist pattern.

S33: and etching the substrate by taking the photoresist pattern as a mask to form a substrate pattern.

As an example, in S30, a photoresist layer may be formed on the surface of the substrate by coating the photoresist composition on the surface of the substrate and then drying the photoresist composition.

In S31, the photoresist layer is exposed using a mixed light source of H, I, and G lines. Wherein the wavelength of the H line is 365 nm. The wavelength of the I line is 436 nm. The wavelength of the G line is 405 nm.

In S32, the exposed photoresist layer is developed with a 2.38 w% tetramethylammonium hydroxide (TMAH) as a developing solution for 1 min. And then washing the developed photoresist layer with water for 25s, and drying to remove the exposed part to obtain the photoresist pattern.

Some examples and comparative examples are provided below to further illustrate the photoresist compositions provided by the present invention.

Examples 1 to 6

13g of the phenolic resin composition, 3g of the photosensitive compound, 1g of the sensitizer, 0.05g of the leveling agent, 0.5g of the adhesion promoter and 80g of the organic solvent were mixed to obtain a photoresist composition. Wherein the content of the first and second substances,

the general structural formula of the photosensitive compound is formula (4), and R in the general formula (4)₁、R₂、R₃And R₄At least three of them have the structural formula (5), and the rest are hydrogen atoms. The structural formula of the sensitizer is shown as formula (7). The leveling agent is perfluorooctyl sulfonyl fluoride. The adhesion promoter is alkenyl triacetoxysilane. The phenolic resin composition consists of a first linear phenolic resin, a second linear phenolic resin and a third linear phenolic resin, wherein the polymerization degree n of the first linear phenolic resin₁A degree of polymerization n of the second linear phenol resin of 50₂190, third novolakDegree of polymerization of fat n₃370, and the mass of the first linear phenol-formaldehyde resin in percentage of the total mass of the phenol-formaldehyde resin composition, the mass of the second linear phenol-formaldehyde resin in percentage of the total mass of the phenol-formaldehyde resin composition, and the mass of the third linear phenol-formaldehyde resin in percentage of the total mass of the phenol-formaldehyde resin composition are shown in table 1.

TABLE 1 percentage of different phenolic resins in the total weight of the phenolic resins

Comparative example 1

13g of the first linear phenolic resin, 3g of the photosensitive compound, 1g of the sensitizer, 0.05g of the leveling agent, 0.5g of the adhesion promoter and 80g of the organic solvent are mixed to obtain the photoresist composition.

Wherein the polymerization degree n of the first linear phenolic resin₁50. The general structural formula of the photosensitive compound is formula (4), and R in the general formula (4)₁、R₂、R₃And R₄At least three of them have the structural formula (5), and the rest are hydrogen atoms. The structural formula of the sensitizer is shown as formula (7). The leveling agent is perfluorooctyl sulfonyl fluoride. The adhesion promoter is alkenyl triacetoxysilane.

Comparative example 2

13g of the second linear phenolic resin, 3g of the photosensitive compound, 1g of the sensitizer, 0.05g of the leveling agent, 0.5g of the adhesion promoter and 80g of the organic solvent are mixed to obtain the photoresist composition.

Wherein the polymerization degree n of the second linear phenolic resin₂190. The general structural formula of the photosensitive compound is formula (4), and R in the general formula (4)₁、R₂、R₃And R₄At least three of them have the structural formula (5), and the rest are hydrogen atoms. The structural formula of the sensitizer is shown as formula (7). The leveling agent is perfluorooctyl sulfonyl fluoride. The adhesion promoter is alkenyl triacetoxysilane.

Comparative example 3

13g of the third linear phenolic resin, 3g of the photosensitive compound, 1g of the sensitizer, 0.05g of the leveling agent, 0.5g of the adhesion promoter and 80g of the organic solvent were mixed to obtain a photoresist composition.

Wherein the degree of polymerization n of the third phenol novolac resin₃As 370, the general structural formula of the above photosensitive compound is formula (4), and R in general formula (4)₁、R₂、R₃And R₄At least three of them have the structural formula (5), and the rest are hydrogen atoms. The structural formula of the sensitizer is shown as formula (7). The leveling agent is perfluorooctyl sulfonyl fluoride. The adhesion promoter is alkenyl triacetoxysilane.

The photoresist compositions of examples 1 to 6 and the photoresist compositions of comparative examples 1 to 3 were evaluated by a method comprising steps 40 to 44(S10 to S41):

the photoresist compositions of examples 1 to 6 and the photoresist compositions of comparative examples 1 to 3 were respectively coated on a silicon wafer by spin coating, and then the silicon wafer coated with the photoresist compositions was vacuum-dried and baked at a temperature of 110 ℃ for 90 seconds to obtain a photoresist layer having a thickness of about 2.0 μm. Wherein each of the photoresist compositions of examples formed 5 identical photoresist layers, each of the photoresist compositions of comparative examples also formed 5 identical photoresist layers, and the photoresist layers formed in examples 1 to 6 and comparative examples 1 to 3 were identical in shape and size.

The thickness of the photoresist layer obtained from each of the photoresist compositions of the examples and the photoresist layer obtained from each of the photoresist compositions of the comparative examples was measured using a film thickness meter, respectively.

And then, respectively exposing each photoresist layer by using a mask plate and a mixed light source of an H line, an I line and a G line, and respectively developing the exposed photoresist layers by using a tetramethylammonium hydroxide solution with the mass fraction of 2.38 w% as a developing solution for 1min to obtain a photoresist pattern.

The timing was respectively timed at the start and end of each photoresist layer exposure, and the exposure energy corresponding to the line having a width of 3 μm in each photoresist layer was calculated according to the energy of the exposure light source and the exposure time of each photoresist layer, and then the average value of the exposure energies of 5 photoresist composition layers prepared in each example or comparative example was calculated to obtain the exposure energy of the photoresist layer prepared in the example or comparative example, and the results are shown in table 2.

The thickness of the photoresist pattern obtained from each of the exemplified photoresist compositions and the photoresist pattern obtained from each of the comparative example photoresist compositions was measured using a film thickness meter, respectively.

The residual film ratio of each photoresist composition was calculated based on the thickness of each photoresist layer and the thickness of the photoresist pattern produced from the photoresist layer in each example or comparative example, and the residual film ratio of the photoresist composition of this example or comparative example was obtained based on the average value of the residual film ratios of 5 photoresist patterns, the results of which are shown in table 2.

The 5 silicon wafers having the photoresist patterns on the surfaces thereof, which were made of the photoresist compositions in each example or comparative example, were each placed on a hot plate (Hotplate) to be baked, and the baking temperatures of the 5 silicon wafers having the photoresist patterns on the surfaces thereof, which were made of the photoresist compositions in each example or comparative example, were set to 120 deg.C, 125 deg.C, 130 deg.C, 135 deg.C, 140 deg.C, respectively, and the baking time was set to 120 s.

After completion of baking, the schottky bars of each photoresist pattern were observed with a microscope, and the heat-resistant temperature of the photoresist patterns formed in each example or comparative example was analyzed based on the photoresist patterns obtained in each example or comparative example, respectively.

The photoresist composition of example one produced a photoresist layer having the heat resistance test results shown in fig. 5. Wherein a in FIG. 5 is a cross-sectional view of the resist pattern at a baking temperature of 120 ℃ (the cross-sectional view along the thickness direction of the resist pattern, and the cross-sectional direction in the following figures is the same). In FIG. 5, b is a cross-sectional view of the photoresist pattern at a baking temperature of 125 ℃. In FIG. 5, c is a cross-sectional view of the photoresist pattern at a baking temperature of 130 ℃. In FIG. 5, d is a cross-sectional view of the photoresist pattern at a baking temperature of 135 ℃. In FIG. 5, e is a cross-sectional view of the photoresist pattern at a baking temperature of 140 ℃.

As can be seen from FIG. 5, when the baking temperature is 120 ℃ to 135 ℃, the lines of the photoresist pattern are all linear lines. When the baking temperature was 140 c, the lines of the photoresist pattern were changed into curved lines, and thus it was found that the temperature of 140 c exceeded the heat-resistant temperature of the photoresist pattern prepared in example 1, resulting in softening deformation of the photoresist pattern. From this, it can be concluded that the photoresist composition in example 1 has a heat resistant temperature of 135 ℃.

The results of the heat resistance test of the photoresist layer prepared from the photoresist composition of example 2 are shown in fig. 6. Wherein, a in FIG. 6 is a cross-sectional view of the photoresist pattern at a baking temperature of 120 ℃. In FIG. 6, b is a cross-sectional view of the photoresist pattern at a baking temperature of 125 ℃. In FIG. 6, c is a cross-sectional view of the photoresist pattern at a baking temperature of 130 ℃. In FIG. 6, d is a cross-sectional view of the photoresist pattern at a baking temperature of 135 ℃. In FIG. 6, e is a cross-sectional view of the photoresist pattern at a baking temperature of 140 ℃.

As can be seen from FIG. 6, when the baking temperature is 120 ℃ to 125 ℃, the lines of the photoresist pattern are all linear lines. When the baking temperature is 130 to 140 c, the lines of the photoresist pattern become curved lines, and thus, the temperature of 130 c exceeds the heat-resistant temperature of the photoresist pattern prepared in example 2, resulting in softening deformation of the photoresist pattern. From this, it can be concluded that the photoresist composition in example 2 has a heat resistant temperature of 125 ℃.

The results of the heat resistance test of the photoresist layer made from the photoresist composition of example 3 are shown in fig. 7. Wherein, a in FIG. 7 is a cross-sectional view of the photoresist pattern at a baking temperature of 120 ℃. In FIG. 7, b is a cross-sectional view of the photoresist pattern at a baking temperature of 125 ℃. In FIG. 7, c is a cross-sectional view of the photoresist pattern at a baking temperature of 130 ℃. In FIG. 7, d is a cross-sectional view of the photoresist pattern at a baking temperature of 135 ℃. In FIG. 7, e is a cross-sectional view of the photoresist pattern at a baking temperature of 140 ℃.

As can be seen from FIG. 7, when the baking temperature is 120 ℃ to 125 ℃, the lines of the photoresist pattern are all linear lines. When the baking temperature was 130 to 140 c, the lines of the photoresist pattern were changed to curved lines, and thus, the temperature of 130 c exceeded the heat-resistant temperature of the photoresist pattern prepared in example 3, resulting in softening deformation of the photoresist pattern. From this, it can be concluded that the photoresist composition in example 3 has a heat resistant temperature of 125 ℃.

The photoresist layer prepared from the photoresist composition of example 4 showed the heat resistance test results as shown in fig. 8. Wherein, a in FIG. 8 is a cross-sectional view of the photoresist pattern at a baking temperature of 120 ℃. In FIG. 8, b is a cross-sectional view of the photoresist pattern at a baking temperature of 125 ℃. In FIG. 8, c is a cross-sectional view of the photoresist pattern at a baking temperature of 130 ℃. In FIG. 8, d is a cross-sectional view of the photoresist pattern at a baking temperature of 135 ℃. In FIG. 8, e is a cross-sectional view of the photoresist pattern at a baking temperature of 140 ℃.

As can be seen from FIG. 8, when the baking temperature is 120 ℃ to 130 ℃, the lines of the photoresist pattern are all linear lines. When the baking temperatures were 135 c and 140 c, the lines of the photoresist pattern were changed to curved lines, and thus, the temperature of 135 c exceeded the heat-resistant temperature of the photoresist pattern prepared in example 4, resulting in softening deformation of the photoresist pattern. From this, it can be concluded that the photoresist composition in example 4 has a heat resistant temperature of 130 ℃.

The results of the heat resistance test of the photoresist layer made from the photoresist composition of example 5 are shown in fig. 9. Wherein, a in FIG. 9 is a cross-sectional view of the photoresist pattern at a baking temperature of 120 ℃. In FIG. 9, b is a cross-sectional view of the photoresist pattern at a baking temperature of 125 ℃. In FIG. 9, c is a cross-sectional view of the photoresist pattern at a baking temperature of 130 ℃. In FIG. 9, d is a cross-sectional view of the photoresist pattern at a baking temperature of 135 ℃. In FIG. 9, e is a cross-sectional view of the photoresist pattern at a baking temperature of 140 ℃.

As can be seen from FIG. 9, when the baking temperature is 120 ℃ to 135 ℃, the lines of the photoresist pattern are all linear lines. When the baking temperature was 140 c, the lines of the photoresist pattern were changed into curved lines, and thus, the temperature of 140 c exceeded the heat-resistant temperature of the photoresist pattern prepared in example 5, resulting in softening deformation of the photoresist pattern. From this, it can be concluded that the photoresist composition in example 5 has a heat resistant temperature of 135 ℃.

The results of the heat resistance test of the photoresist layer made from the photoresist composition of example 6 are shown in fig. 10. Wherein, a in FIG. 10 is a cross-sectional view of the photoresist pattern at a baking temperature of 120 ℃. In FIG. 10, b is a cross-sectional view of the photoresist pattern at a baking temperature of 125 ℃. In FIG. 10, c is a cross-sectional view of the photoresist pattern at a baking temperature of 130 ℃. In FIG. 10, d is a cross-sectional view of the photoresist pattern at a baking temperature of 135 ℃. In FIG. 10, e is a cross-sectional view of the photoresist pattern at a baking temperature of 140 ℃.

As can be seen from FIG. 10, when the baking temperature is 120 ℃ to 130 ℃, the lines of the photoresist pattern are all linear lines. When the baking temperature was 135 to 140 c, the lines of the photoresist pattern were changed to curved lines, and thus, the temperature of 135 c exceeded the heat-resistant temperature of the photoresist pattern prepared in example 6, resulting in softening deformation of the photoresist pattern. From this, it can be concluded that the photoresist composition in example 6 has a heat resistant temperature of 130 ℃.

The results of the heat resistance test of the photoresist layer prepared from the photoresist composition of comparative example 1 are shown in fig. 11. Wherein, a in FIG. 11 is a cross-sectional view of the photoresist pattern at a baking temperature of 120 ℃. In FIG. 11, b is a cross-sectional view of the photoresist pattern at a baking temperature of 125 ℃. In FIG. 11, c is a cross-sectional view of the photoresist pattern at a baking temperature of 130 ℃. In FIG. 11, d is a cross-sectional view of the photoresist pattern at a baking temperature of 135 ℃. In FIG. 11, e is a cross-sectional view of the photoresist pattern at a baking temperature of 140 ℃.

As can be seen from FIG. 11, when the baking temperature is 120 deg.C-140 deg.C, the lines of the photoresist pattern are all curved lines. The temperature of 120 c exceeded the heat resistant temperature of the photoresist pattern prepared in comparative example 1, resulting in softening deformation of the photoresist pattern. From this, it can be seen that the photoresist composition of comparative example 1 has a heat resistant temperature of less than 120 ℃.

The results of the heat resistance test of the photoresist layer prepared from the photoresist composition of comparative example 2 are shown in fig. 12. Wherein, a in FIG. 12 is a cross-sectional view of the photoresist pattern at a baking temperature of 120 ℃. In FIG. 12, b is a cross-sectional view of the photoresist pattern at a baking temperature of 125 ℃. In FIG. 12, c is a cross-sectional view of the photoresist pattern at a baking temperature of 130 ℃. In FIG. 12, d is a cross-sectional view of the photoresist pattern at a baking temperature of 135 ℃. In FIG. 12, e is a cross-sectional view of the photoresist pattern at a baking temperature of 140 ℃.

As can be seen from FIG. 12, when the baking temperature is 120 ℃ to 140 ℃, the lines of the photoresist pattern are all linear lines. From this, it can be seen that the photoresist composition of comparative example 2 has a heat resistant temperature of 140 ℃.

The results of the heat resistance test of the photoresist layer prepared from the photoresist composition of comparative example 3 are shown in fig. 13. Wherein, a in FIG. 13 is a cross-sectional view of the photoresist pattern at a baking temperature of 120 ℃. In FIG. 13, b is a cross-sectional view of the photoresist pattern at a baking temperature of 125 ℃. In FIG. 13, c is a cross-sectional view of the photoresist pattern at a baking temperature of 130 ℃. In FIG. 13, d is a cross-sectional view of the photoresist pattern at a baking temperature of 135 ℃. In FIG. 13, e is a cross-sectional view of the photoresist pattern at a baking temperature of 140 ℃.

As can be seen from FIG. 13, when the baking temperature is 120 ℃ to 135 ℃, the lines of the photoresist pattern are all linear lines. When the baking temperature was 135 deg.c, the lines of the photoresist pattern were changed to curved lines, and thus, the temperature of 135 deg.c exceeded the heat-resistant temperature of the photoresist pattern prepared in comparative example 3. From this, it can be seen that the photoresist composition of comparative example 3 has a heat resistant temperature of 135 ℃.

TABLE 2 Photoresist composition Performance test results

As can be seen from tables 1 and 2, when the phenolic resin only includes the first linear phenolic resin, the obtained photoresist layer has higher sensitivity, but the heat resistance temperature and the residual film rate of the photoresist layer are lower, so that when only the first linear phenolic resin is used as the phenolic resin, the obtained photoresist layer has higher photoetching efficiency, but lines in a photoresist pattern formed after the photoresist layer is exposed and developed are easy to deform, and the yield of the manufactured integrated circuit is lower.

When the phenolic resin includes only the second linear phenolic resin, the obtained photoresist layer has higher heat resistance temperature and residual film rate, but the sensitivity of the photoresist layer is lower. When the second linear phenolic resin is used as the phenolic resin, lines of the photoresist layer are not easy to change, the yield of the integrated circuit can be improved, but the photoetching efficiency of the photoresist layer is lower, so that the productivity of the integrated circuit is lower.

When the phenolic resin includes only the third linear phenolic resin, the resulting photoresist layer has higher heat resistance temperature and residual film ratio, but the sensitivity of the photoresist layer is lower. When the third linear phenolic resin is used as the phenolic resin, lines of the photoresist layer are not easy to change, the yield of the integrated circuit can be improved, but the photoetching efficiency of the photoresist layer is lower, so that the productivity of the integrated circuit is lower.

When the phenolic resin comprises the first linear phenolic resin, the second phenolic resin and the third phenolic resin, the sensitivity, the residual film rate and the heat-resisting temperature of the phenolic resin are higher, so that when the first linear phenolic resin, the second phenolic resin and the third phenolic resin are adopted, the obtained photoresist layer has higher sensitivity and higher heat-resisting temperature, and the productivity of the integrated circuit and the yield of the integrated circuit can be ensured to be improved.

The embodiment of the invention also provides a display device. The display device comprises at least one of a photoresist pattern obtained by the patterning method of the photoresist layer and a substrate pattern obtained by the patterning method of the substrate.

In some examples, the photoresist pattern may be a black matrix in the display device; in other examples, the photoresist pattern may define a layer for pixels in the display device; in still other examples, one of the photoresist patterns may be a black matrix in a display device, and the other of the photoresist patterns may be a pixel defining layer in the display device, that is, the display device may include one or more photoresist patterns obtained by the above-described method for patterning the photoresist layer.

The Display device may be a product or a component having any Display function, such as an L CD Display (L liquid Crystal Display), a L CD television, an O L ED (Organic L light Emitting Diode) Display, an O L ED television, a digital photo frame, a mobile phone, a tablet computer, a digital photo frame, and a navigator.

Specifically, the substrate pattern includes at least one of a signal line and an electrode.

Illustratively, the signal line includes: at least one of gate lines, gate line leads, data lines, data line leads, common electrode lines, and power lines.

Illustratively, the electrode includes: the TFT comprises a source electrode, a drain electrode, and at least one of structures such as a grid electrode, a pixel electrode, a common electrode, a touch drive electrode and a touch sensing electrode.

It should be understood that, when the signal lines include specific traces, such as gate lines and data lines, which are traces located in different layers, and the electrodes include specific structures, such as a gate electrode of a TFT and source and drain electrodes of the TFT, which are structures located in different layers, the display device includes different substrate patterns obtained by using the patterning method for the substrate, that is, one substrate pattern includes: the gate line and other traces or other structures (e.g., gates) disposed on the same layer as the gate line, the other substrate pattern includes: data lines and other traces or other structures (e.g., source electrodes of TFTs and drain electrodes of TFTs) disposed on the same layer as the data lines. Of course, the display device may further include more substrate patterns, which are not described in detail in the embodiments of the present invention.

In the foregoing description of embodiments, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more examples or examples.

The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.

Claims

1. A photoresist composition, comprising: a phenolic resin composition, a photosensitive compound and an organic solvent;

and

2. The photoresist composition of claim 1, wherein the mass of the first linear phenolic resin accounts for 10-50% of the total mass of the phenolic resin composition;

the mass of the second linear phenolic resin accounts for 10-50% of the total mass of the phenolic resin composition; and

3. The photoresist composition according to claim 2, wherein the mass ratio of the first linear phenolic resin to the second linear phenolic resin is (1-2): 2; and/or the presence of a gas in the gas,

4. the photoresist composition of claim 1, wherein the photosensitive compound has a general structural formula of formula (4):

5. the photoresist composition of claim 4, wherein R is₁、R₂、R₃And R₄At least three of the structural formulas are all the formula (5), and the rest are hydrogen atoms.

6. The photoresist composition according to any one of claims 1 to 5, wherein the photoresist composition further comprises an additive;

the mass of the photosensitive compound accounts for 1-10% of the total mass of the photoresist composition;

the mass of the organic solvent accounts for 70-85% of the total mass of the photoresist composition;

the mass of the additive accounts for 1.5-10.5% of the total mass of the photoresist composition.

7. The photoresist composition of claim 6, wherein the additive comprises at least one of a sensitizer, a leveling agent, and an adhesion promoter.

8. The photoresist composition of claim 7, wherein the additives comprise a sensitizer, a leveling agent, and an adhesion promoter; wherein the content of the first and second substances,

the mass of the sensitizer accounts for 20-70% of the total mass of the additive;

9. The photoresist composition of claim 7, wherein the additive is selected from at least one of the following:

the structural formula of the sensitizer in the additive is formula (7):

the leveling agent in the additive comprises at least one of an organic silicon leveling agent and a fluorine-containing surfactant; and the number of the first and second groups,

the adhesion promoter in the additive comprises at least one of melamine resin, a silane coupling agent and an ultra-high molecular weight vinyl ether compound.

10. The photoresist composition of claim 1, wherein the organic solvent comprises: at least one of propylene glycol methyl ether acetate, ethylene glycol monomethyl ether, propylene glycol monomethyl ether, diethylene glycol dimethyl ether, ethyl lactate, ethyl acetate, N-butyl acetate and N-methylpyrrolidone.

11. A method of preparing a photoresist composition, comprising:

the phenolic resin composition comprises: a first linear phenolic resin, a second linear phenolic resin and a third linear phenolic resin;