CN111501019A - Reaction chamber turbine structure for CVD equipment - Google Patents
Reaction chamber turbine structure for CVD equipment Download PDFInfo
- Publication number
- CN111501019A CN111501019A CN202010404267.2A CN202010404267A CN111501019A CN 111501019 A CN111501019 A CN 111501019A CN 202010404267 A CN202010404267 A CN 202010404267A CN 111501019 A CN111501019 A CN 111501019A
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- Prior art keywords
- gas
- cavity
- blades
- support column
- reaction chamber
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 16
- 235000012431 wafers Nutrition 0.000 claims abstract description 22
- 238000009826 distribution Methods 0.000 claims description 12
- 239000007789 gas Substances 0.000 abstract description 40
- 239000012495 reaction gas Substances 0.000 abstract description 24
- 238000000034 method Methods 0.000 abstract description 14
- 230000008569 process Effects 0.000 abstract description 13
- 230000007246 mechanism Effects 0.000 abstract description 9
- 238000005507 spraying Methods 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 229920006395 saturated elastomer Polymers 0.000 abstract description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000007921 spray Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45589—Movable means, e.g. fans
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
Abstract
The invention discloses a reaction chamber turbine structure for CVD equipment, which comprises a cavity, wherein a rotating support column is arranged in the cavity, a plurality of blades are uniformly arranged on the rotating support column along the axial direction, grooves are formed in the blades, wafers are arranged through the grooves, and a gas splitter plate is arranged on the rotating support column and is arranged below the blades; the gas splitter plate is provided with a plurality of splitter holes, and the bottom of the cavity is provided with an exhaust hole communicated with a tail gas system; the beneficial effects are that: four exhaust holes are arranged in the cavity, the gas outlet direction is consistent with the direction of the rotating mechanism, auxiliary rotating power can be generated, the gas source of the exhaust holes is consistent with the reaction gas of the spraying plate, the gas mass flow meter is used for controlling the gas outlet quantity of the side wall, the reaction gas output by the exhaust holes is also used as supplementary gas to fill the area which cannot be completely filled, the concentration of the reaction gas in contact with the whole wafer is more uniform and saturated, and the process stability is better.
Description
Technical Field
The invention relates to the technical field of mechanical structures, in particular to a turbine structure of a reaction chamber for CVD equipment.
Background
In the semiconductor industry, Chemical Vapor Deposition (CVD) is widely used in integrated circuits, and the related technologies become more mature with higher requirements.
The exploration of the properties of the initial semiconductor is very mature, but some inherent defects, such as optical properties, high-voltage and high-frequency properties, and the like, cannot be overcome. Meanwhile, the third generation semiconductor (wide bandgap semiconductor) is gaining favor in the semiconductor industry in order to make up for the shortage of Si material, and is the most promising semiconductor material after Si.
With the emergence of new markets such as 5G, automobiles and the like, the irreplaceable advantages of SiC/GaN enable the research and development and application of related products to be accelerated; with the progress of manufacturing technology, SiC and GaN devices and modules can be incorporated into alternatives in terms of cost, and the era of SiC/GaN is coming with the demand for pulling stack cost down.
At present, there are many difficulties in the manufacturing process of silicon carbide materials, the yield and the capacity of the material growth are limited by uniformity and pressure control, the current mature silicon carbide material process on the market is single-piece growth, the yield cannot be further improved under the current technical level, the growth time of one-step process is relatively long, and even a full-automatic continuous production device cannot bring obvious capacity improvement, so that the structure for completing the growth of multiple pieces of materials by one-step process is the main direction of current research.
Disclosure of Invention
The present invention is directed to a turbine structure of a reaction chamber for a CVD apparatus, which solves the above problems of the prior art.
In order to solve the technical problems, the technical scheme of the invention is as follows: a reaction chamber turbine structure for CVD equipment comprises a cavity, wherein a rotating support column is arranged in the cavity, a plurality of blades are uniformly arranged on the rotating support column along the axial direction, grooves are formed in the blades, wafers are installed through the grooves, and a gas splitter plate is arranged below the blades; the gas splitter plate is provided with a plurality of splitter holes, and the bottom of cavity is provided with the exhaust hole of intercommunication tail gas system.
As a preferable aspect of the present invention, the number of the blades is six.
As a preferable scheme of the present invention, the gas distribution plate has a plurality of distribution holes uniformly arranged in a circumferential direction with the rotation support column as a rotation center.
In a preferred embodiment of the present invention, the exhaust hole is provided in an arc formed by the plurality of flow dividing holes.
As a preferred scheme of the invention, four groups of air outlets are uniformly formed in the cavity.
As a preferable scheme of the invention, each group of the air outlets is provided with eight air outlet holes.
As a preferable scheme of the invention, the inclination angle of the blades is 45-60 degrees.
The beneficial effect of adopting above-mentioned technical scheme is: the invention designs four exhaust holes on the side wall of the cavity, the exhaust direction is consistent with the direction of the rotating mechanism, auxiliary rotating power can be generated, the gas source of the exhaust holes on the side wall is consistent with the reaction gas of the spray plate, simultaneously, a gas mass flowmeter is used for controlling the exhaust amount of the side wall, and simultaneously, the reaction gas output by the side wall holes is also used as a supplementary gas to fill the area which is not completely filled by the inlet gas of the top spray plate, so that the concentration of the reaction gas contacted with the whole wafer is more uniform and saturated, and the process stability is more excellent.
Drawings
FIG. 1 is a schematic perspective view of the present invention;
FIG. 2 is a schematic view of the full-section structure of the present invention;
fig. 3 is a perspective view of the present invention.
In the figure, 1, chamber; 2. a wafer; 3. a blade; 4. rotating the support column; 5. an air outlet; 6. a second U-shaped conductor; 7. a gas splitter plate; 8. and a shunt hole.
Detailed Description
The following further describes embodiments of the present invention with reference to the drawings. It should be noted that the description of the embodiments is provided to help understanding of the present invention, but the present invention is not limited thereto. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
According to fig. 1 and 2, the embodiment provides a reaction chamber turbine structure for a CVD apparatus, which includes a chamber 1, a rotating support column 4 is disposed in the chamber 1, the rotating support column 4 is uniformly provided with a plurality of blades 3 along an axial direction, the blades 3 are provided with grooves, a wafer 2 is mounted through the grooves, the rotating support column 4 is further provided with a gas splitter plate 7, and the gas splitter plate 7 is disposed below the blades 3; the gas flow distribution plate 7 is provided with a plurality of flow distribution holes 8, and the bottom of the chamber 1 is provided with an exhaust hole communicated with a tail gas system.
The vanes 3 are preferably provided with six.
The gas flow distribution plate 7 takes the rotating support column 4 as a rotating center, and a plurality of flow distribution holes 8 are uniformly arranged in the circumferential direction.
The exhaust hole is arranged on an arc formed by the plurality of the branch flow holes 8.
Four groups of air outlets are also uniformly arranged in the cavity.
And eight air outlet holes 5 are formed in each air outlet.
The inclination angle of the blades 3 is 45-60 degrees.
This patent is the rotatable structure of base station, through improving cavity structures to rotation support post 4 is the main part, utilizes the reaction gas in the cavity 1 to carry out the rotation through the structure of turbine blade 3 form. Meanwhile, the reaction gas passes through the gaps of the blades 3, and materials grow on the wafer 2 fixed on the blades 3. Each blade 3 bears one wafer 2, reaction gas required by the process is used as a reaction source and a self-rotation force source, the structure cannot rotate at a high speed, the self-rotation speed is controlled by adjusting the angle, the weight and the shape of each blade 3 and the flow of the reaction gas, the gas flow field of the whole chamber 1 is homogenized, and the uniformity between the wafer 2 and the wafer 2 is improved.
The main structure includes: the rotary supporting column 4, the blade 3 for bearing the wafer 2, the air pumping ring, the supplementary air outlet hole 5 on the side surface of the cavity and the like. This patent is based on the cavity adds the semiconductor cavity 1 structure that sprays the board, and main reaction gas gets into the cavity through spraying the board perpendicularly downwards.
The invention discloses a blade 3 structure for bearing a wafer 2, which is characterized in that a rotary support column 4 is taken as a main body, the support column is fixed in a chamber 1 and can freely rotate through a bearing or other rotary mechanisms, 6 blades 3 are connected to the support column, the number of the blades 3 is not limited, the blades can be multi-layered and multi-piece, and the specific implementation number is calculated according to the gas flow and the whole simulation of a flow field in the chamber 1. When the reaction gas enters the chamber 1 along the vertical direction, the reaction gas drives the blades 3 to generate power to enable the rotating mechanism to rotate.
In addition, grooves which are beneficial to gas flow guiding can be machined on the surface of the rotating support column 4, and the specific implementation needs to be matched according to different process formulas.
This patent has designed four exhaust gas vent 5 on 1 lateral wall of cavity, it is unanimous with the rotary mechanism direction to give vent to anger the direction, can produce supplementary rotary power, the gas source of gas vent 5 on the lateral wall is unanimous with the reaction gas who sprays the board, use gas mass flow meter to control the lateral wall gas output simultaneously, the reaction gas of lateral wall hole output also fills the region that admits air by the top spraying board and fail to fill completely, make the reaction gas concentration of 2 contacts of whole wafer more even saturation, make process stability more superior. Fig. 1 is the major structure of this patent, including cavity 1, rotation support post 4, and blade 3 is connected on the support post, has the recess that bears wafer 2 on the blade 3, has designed four rows of lateral wall ventholes 5 on the cavity 1, and the gas in the cavity 1 flows to the tail gas system by the exhaust hole through dividing the gas board simultaneously.
Fig. 2 is a sectional view of the structure of the present patent, in which the vertical downward pointing arrows represent the reaction gas entering the chamber 1 from the spray plate, the oblique arrows represent the reaction gas entering from the sidewall air outlet 5, the sources of the reaction gas are the same, the proportions are the same, the only difference is that there is separate flow control, the two gases are power generated by the rotating mechanism and flow into the surface of each wafer 2 to complete the process reaction, the mixed gas flows into the exhaust hole of the chamber 1 through the air holes of the gas distribution plate until reaching the exhaust system, and the flow restriction makes the flow field in the chamber 1 more uniform by the action of the gas distribution plate.
In order to more clearly illustrate the content of the patent expressed by the description of the patent in combination with the structure and the schematic diagram, a simple process is taken as an example for illustration: the epitaxial layer of the silicon carbide wafer 2 is grown by taking the 6-inch silicon carbide wafer 2 as a substrate, using silane, ethane or propane as reaction gas and hydrogen and nitrogen as auxiliary gas, and reacting at 1600 ℃ for 8 hours.
The method comprises the following specific steps: 1. placing 6 silicon carbide wafers 2 in the grooves of the blades 3 respectively; 2. closing a cover plate of the chamber 1, pumping the equipment to a background pressure of 3, heating the equipment to 1600 ℃, and stabilizing for 2 minutes; 4. introducing nitrogen with the same flow as the reaction gas required by the process, and enabling the rotating mechanism to start to rotate by respectively passing through the spraying plate and the side wall of the cavity according to a set proportion; 5. after 5 minutes, the rotating speed of the rotating mechanism is stable, reaction gas is introduced into the chamber 1 according to the proportion of the process formula, and nitrogen is cut off and closed at the same time; 6. the rotating mechanism in the cavity enables the reaction gas contacted by the 6 wafers 2 to be uniform, meanwhile, the supplementing gas on the side wall can fully fill the missed gaps, the film thickness uniformity among the 6 wafers 2 is more consistent, after 8-hour process deposition is carried out, the reaction gas is closed, and the equipment begins to cool. 7. The equipment can be used for introducing the purging gas to carry out temperature reduction acceleration during temperature reduction, and the wafer 2 is taken out after the temperature is restored to the room temperature.
The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the described embodiments. It will be apparent to those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, and the scope of protection is still within the scope of the invention.
Claims (7)
1. A reaction chamber turbine structure for CVD equipment is characterized by comprising a cavity, wherein a rotating support column is arranged in the cavity, a plurality of blades are uniformly arranged on the rotating support column along the axial direction, grooves are formed in the blades, wafers are installed through the grooves, a gas distribution plate is further arranged on the rotating support column, and the gas distribution plate is arranged below the blades; the gas splitter plate is provided with a plurality of splitter holes, and the bottom of cavity is provided with the exhaust hole of intercommunication tail gas system.
2. The turbine structure of a reaction chamber for a CVD apparatus according to claim 1, wherein the blade is provided in six.
3. The turbine structure of a reaction chamber for a CVD apparatus according to claim 1, wherein the gas distribution plate is provided with a plurality of distribution holes uniformly in a circumferential direction with the rotation support column as a rotation center.
4. The turbine structure of a reaction chamber for a CVD apparatus according to claim 3, wherein the exhaust hole is provided in an arc formed by the plurality of flow dividing holes.
5. The turbine structure of a reaction chamber for a CVD apparatus as claimed in claim 1, wherein the chamber further has four sets of gas outlets uniformly formed therein.
6. The turbine structure of a reaction chamber for a CVD apparatus according to claim 5, wherein each of the gas outlets is provided with eight gas outlets.
7. The turbine structure of a reaction chamber for a CVD apparatus according to claim 1, wherein the inclination angle of the blades is 45 ° to 60 °.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010404267.2A CN111501019A (en) | 2020-05-13 | 2020-05-13 | Reaction chamber turbine structure for CVD equipment |
| PCT/CN2020/092746 WO2021227133A1 (en) | 2020-05-13 | 2020-05-28 | Reaction chamber turbine structure for chemical vapor deposition (cvd) apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010404267.2A CN111501019A (en) | 2020-05-13 | 2020-05-13 | Reaction chamber turbine structure for CVD equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111501019A true CN111501019A (en) | 2020-08-07 |
Family
ID=71875501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010404267.2A Pending CN111501019A (en) | 2020-05-13 | 2020-05-13 | Reaction chamber turbine structure for CVD equipment |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN111501019A (en) |
| WO (1) | WO2021227133A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115537777A (en) * | 2022-08-16 | 2022-12-30 | 湖南顶立科技有限公司 | Vapor deposition equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6090894A (en) * | 1983-10-20 | 1985-05-22 | Fujitsu Ltd | Vapor phase growing apparatus |
| US4638762A (en) * | 1985-08-30 | 1987-01-27 | At&T Technologies, Inc. | Chemical vapor deposition method and apparatus |
| US4772356A (en) * | 1986-07-03 | 1988-09-20 | Emcore, Inc. | Gas treatment apparatus and method |
| KR20000026459A (en) * | 1998-10-20 | 2000-05-15 | 윤종용 | Spinner for manufacturing semiconductor |
| KR20110077460A (en) * | 2009-12-30 | 2011-07-07 | 엘아이지에이디피 주식회사 | Apparatus for chemical vapor deposition |
| KR20110077462A (en) * | 2009-12-30 | 2011-07-07 | 엘아이지에이디피 주식회사 | Apparatus for vapor deposition |
| CN102272352A (en) * | 2009-01-30 | 2011-12-07 | 东洋炭素株式会社 | Cvd apparatus |
| JP2013235947A (en) * | 2012-05-08 | 2013-11-21 | Yu Bridge Kk | Rotary blade vapor deposition equipment |
| CN103930594A (en) * | 2011-09-28 | 2014-07-16 | 赫拉克勒斯公司 | Loading device for densification via chemical infiltration in steam phase in directed flow of three-dimensional porous substrates |
| CN212560430U (en) * | 2020-05-13 | 2021-02-19 | 深圳市纳设智能装备有限公司 | Reaction chamber turbine structure for CVD equipment |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60194077A (en) * | 1984-03-14 | 1985-10-02 | Canon Inc | Apparatus for forming deposited film |
| US7837843B2 (en) * | 2005-07-12 | 2010-11-23 | Praxair S.T. Technology, Inc. | Fixture for use in a coating operation |
| US8840726B2 (en) * | 2011-06-08 | 2014-09-23 | Asm Technology Singapore Pte Ltd | Apparatus for thin-film deposition |
| KR101490993B1 (en) * | 2012-12-31 | 2015-02-06 | 박형상 | Vapor deposition apparatus using vertical plate heater |
| CN110172677A (en) * | 2019-07-05 | 2019-08-27 | 佛山王氏航空光学科技有限公司 | Public rotation type filming equipment for vacuum coating |
| CN110684962B (en) * | 2019-10-21 | 2022-03-29 | 江苏菲沃泰纳米科技股份有限公司 | Airflow dispersion device for coating equipment and application thereof |
-
2020
- 2020-05-13 CN CN202010404267.2A patent/CN111501019A/en active Pending
- 2020-05-28 WO PCT/CN2020/092746 patent/WO2021227133A1/en active Application Filing
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6090894A (en) * | 1983-10-20 | 1985-05-22 | Fujitsu Ltd | Vapor phase growing apparatus |
| US4638762A (en) * | 1985-08-30 | 1987-01-27 | At&T Technologies, Inc. | Chemical vapor deposition method and apparatus |
| US4772356A (en) * | 1986-07-03 | 1988-09-20 | Emcore, Inc. | Gas treatment apparatus and method |
| KR20000026459A (en) * | 1998-10-20 | 2000-05-15 | 윤종용 | Spinner for manufacturing semiconductor |
| CN102272352A (en) * | 2009-01-30 | 2011-12-07 | 东洋炭素株式会社 | Cvd apparatus |
| KR20110077460A (en) * | 2009-12-30 | 2011-07-07 | 엘아이지에이디피 주식회사 | Apparatus for chemical vapor deposition |
| KR20110077462A (en) * | 2009-12-30 | 2011-07-07 | 엘아이지에이디피 주식회사 | Apparatus for vapor deposition |
| CN103930594A (en) * | 2011-09-28 | 2014-07-16 | 赫拉克勒斯公司 | Loading device for densification via chemical infiltration in steam phase in directed flow of three-dimensional porous substrates |
| JP2013235947A (en) * | 2012-05-08 | 2013-11-21 | Yu Bridge Kk | Rotary blade vapor deposition equipment |
| CN212560430U (en) * | 2020-05-13 | 2021-02-19 | 深圳市纳设智能装备有限公司 | Reaction chamber turbine structure for CVD equipment |
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| Publication number | Publication date |
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| WO2021227133A1 (en) | 2021-11-18 |
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Address after: 518107 1b, building A6, Guangming Science Park, China Merchants Group, sightseeing Road, Fenghuang community, Fenghuang street, Guangming District, Shenzhen City, Guangdong Province Applicant after: Shenzhen Nashe Intelligent Equipment Co.,Ltd. Address before: 518107 1b, building A6, Guangming Science Park, China Merchants Group, sightseeing Road, Fenghuang community, Fenghuang street, Guangming District, Shenzhen City, Guangdong Province Applicant before: Shenzhen Nashi Intelligent Equipment Co.,Ltd. |
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