JP2013235947A - Rotary blade vapor deposition equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a structure of equipment satisfying the requirements: in mass production using chemical vapor deposition (CVD) in which a crystal film is deposited on a substrate, a batch size is increased while improving uniformity; a gas flow rate is increased without increasing a gas flow amount; and HVPE (Hydride Vapor Phase Epitaxy) can be used as a method other than organic metal CVD which is expensive and consumes a large amount of carry gas.SOLUTION: Rotary blade vapor deposition equipment is provided in which susceptors are arranged like turbine blades, and a substrate is placed on a surface of the susceptor. The rotation of the blades provides high-speed line velocity. The number of wafers which can be processed once (a batch size) can be increased according to the number of the blades. This rotation also functions as an exhaust mechanism to allow the equipment to be downsized at the same time. The introduction of a heating joint for vaporizing solid metal and guiding the vaporized metal remaining at a high temperature allows liquid or solid materials to be used to reduce a manufacturing cost.

Description

The present invention relates to an apparatus structure for growing a thin film on a substrate.

Equipment for growing films from the vapor phase to the substrate at high temperatures has been developed with the semiconductor industry. An apparatus for growing a crystal film has a special structure because it is necessary to clean the atmosphere and manage particle dust on the substrate with high reproducibility among vapor phase growth apparatuses. Several typical structures have been invented according to the size of the substrate as the structure of the mass production apparatus.

In the silicon semiconductor industry, there was a time when the development of mounting bipolar transistors on LSIs (Large Scale Integrated Circuits) competed. The transistor has a crystal structure in which a silicon crystal film is grown on a silicon substrate. An apparatus for growing this crystal film was called a silicon epitaxial apparatus. Since silicon substrates (referred to as wafers) currently have a 12-inch diameter, the current epitaxial device is a single wafer type.

This is because when the substrate is large, an apparatus structure for processing one substrate is suitable for obtaining uniformity. However, in the 1980's when processing 2 inch and 4 inch substrates, the batch method was used. At that time, several device structures were invented because of the need to process a large number of substrates.

Although the silicon semiconductor industry has matured, devices using compound semiconductors are now growing as an industry. The industry is a laser device using a GaAs (gallium arsenide) substrate and an LED (Light Emitting Diode) device using a GaN (gallium nitride) or sapphire substrate.

In these industries, substrates are 2 to 4 inches. This is an industry that can increase the production efficiency as the number of substrates that can be processed in one growth increases. In the silicon industry, it was possible to increase the size of the substrate, so the size of the substrate was increased to reduce the manufacturing cost. Therefore, there is a reality that the substrate is now up to 12 inches.

In the compound semiconductor industry, the age of using 2-inch and 4-inch substrates still continues, but cost competition has begun to intensify in the market. For this reason, increasing the number of substrates that can be grown in a single process and lowering the cost of raw materials become a competitive advantage of differentiation.

An organic metal gas is used for the growth of the compound semiconductor film. This gas is thermally decomposed to form a polymer in the gas phase. Because of this property, there are few types of mass production equipment for crystal growth. The basic structure is to use one susceptor (a heating plate on which a substrate is placed) and to place one or more substrates thereon, which has not evolved since a long time ago.

On the other hand, there were many structural ideas for silicon epitaxial devices in the era of rapid industrial growth. Among them is the idea of using a large number of susceptors. As an example, the structure disclosed in Japanese Patent Laid-Open No. 60-090894 (Patent Document 1) is transferred and shown in FIG.

In this structure, a plurality of susceptors 11 are arranged radially, and a base body (same as a substrate) 4 is mounted on both surfaces of each susceptor 11. FIG. 2 shows the structure of the cylinder reaction chamber 12.

The susceptor is heated by the heater 16 and rotated by the substrate rotation introducing device 15. 13 Chemical vapor deposition (CVD) gas is introduced from a plurality of inlets from the raw material blowing nozzle 13, flows from above the susceptor, thermally decomposes on the substrate on the susceptor, and grows a crystal film. Then, the air is exhausted from the exhaust port 14.

An example of the structure of a growth apparatus for increasing the batch size (increasing the number of substrates to be grown at one time) is shown from the disclosed invention.

Patent Document 2 discloses an invention in 1987 in which a silicon carbide crystal film is grown on a silicon substrate under reduced pressure. The present invention is a technique for growing a crystal film having a smooth surface on a heterogeneous substrate by slightly tilting the axis of the substrate.

In recent years, silicon carbide has been put into practical use as a high breakdown voltage, high frequency, high power device crystal. GaN is also being put into practical use as a crystal for LED lighting and high-speed high-power devices. There is a growing market need for attempts to grow these crystals heterocrystals on a silicon crystal substrate in a large batch size.

JP-A-60-090894 JP 62-155512 A

By using a structure that increases the number of susceptors, the batch size can be increased. In mass production, improving the batch size while improving uniformity is a fundamental issue.

A method that does not degrade uniformity when the batch size or equipment is increased is to flow a large flow of carrier gas. This has the problem 1 that the amount of carrier gas consumed increases. When an organometallic gas is used as a CVD gas, a polymerization reaction is caused in the gas phase to generate particle dust. Therefore, a large flow rate gas has an effect of suppressing this polymerization reaction because it quickly crosses the heating space.

A large flow rate increases the flow rate of the CVD gas on the substrate. A high flow rate has the effect of thinning the diffusion layer (stagnation layer) and increasing the growth rate. There is a problem 2 that it is desired to increase the flow rate even when the batch size is increased. In addition, there is a problem 3 in that unreacted gas to be exhausted is consumed to reduce adhesion to exhaust pipes and pumps and to reduce downtime due to maintenance.

Since organometallic gases are expensive, there is a desire to grow liquid films containing these metals and metal solids into gases, transport them at high temperatures, and use them to grow crystalline films with cheaper raw materials. Therefore, a structure for transporting gas at high temperature is necessary. This is problem 4.

The present invention includes a rotatable rotating blade susceptor in which a plurality of susceptors for supporting and heating a substrate are inclined and arranged in a blade shape as described in claim 1, and the heated rotating blade susceptor rotates. In this manufacturing apparatus, the CVD gas is sucked and exhausted, and the CVD gas is decomposed to grow a film on the substrate placed on the susceptor.

The invention according to claim 2 has a shaft for rotating the rotating blade susceptor, the inside of the shaft is connected to a CVD exhaust pipe, and a mechanism for heating the inside of the exhaust pipe is provided. It is a manufacturing apparatus of description.

The invention according to claim 3 is the manufacturing apparatus according to claim 1, wherein the heating is performed by induction heating, lamp heating, resistance heating, or a combination thereof.

The invention according to claim 4 is characterized in that the optical path axis of the measuring device for measuring the temperature or light reflectance of the blade susceptor is set so that the inclined blade susceptor is viewed vertically. It is a manufacturing apparatus.

The invention according to claim 5 is the manufacturing apparatus according to claim 1, wherein the substrate includes a removable cover on a surface of the blade susceptor, and the substrate is placed on the cover. .

The invention according to claim 6 is the manufacturing apparatus according to claims 1 to 5, wherein the CVD gas is supplied via a heating joint heated to 200 ° C. or more even if the CVD gas is low.

The invention according to claim 7 is that the heating of the heating joint is performed by passing a current through a coaxial cylinder resistance heating element, and the CVD gas is supplied through the central cylinder resistance heating element. It is a manufacturing apparatus of Claims 1-7 characterized by the above-mentioned.

The invention according to claim 8 is that the CVD gas is a vaporized gas obtained by heating and vaporizing a solid material, or a reaction gas generated by reacting with a gas containing halogen or hydrogen capable of reacting with the solid material. It is a manufacturing apparatus of Claims 1-7 characterized by these.

The invention according to claim 9 is that the CVD gas is a vaporized gas obtained by heating and vaporizing a solid material, or a reaction gas generated by reacting with a gas containing halogen or hydrogen capable of reacting with the solid material. The manufacturing apparatus according to claim 1, wherein:

The invention according to claim 10 is the manufacturing apparatus according to claims 1 to 9, wherein the susceptor and the resistance heating element are made of carbon graphite.

The invention according to claim 11 is a semiconductor film in which the film contains any one or more of silicon, germanium, carbon graphite, gallium, aluminum, indium, zinc, nitrogen, oxygen, magnesium, phosphorus, boron, or a combination thereof. The manufacturing apparatus according to claim 1, wherein the manufacturing apparatus is a laminated film.

According to the first to third aspects of the present invention, the rotating blade susceptor in which the susceptor is arranged in a blade shape rotates to suck and exhaust the CVD gas. This means that it also serves as an exhaust pump. The pump capacity for exhausting the CVD gas can be selected so that the space of the apparatus can be reduced.

Since the rotational speed determines the speed at which the blade susceptor crosses the gas, the relative speed between the substrate and the gas can be controlled. High speed rotation increases the speed at which the gas crosses the substrate surface. This rotation speed adjustment means that the type and concentration of decomposition active species generated by gas decomposition can be controlled. Since the centrifugal force acts when the rotation speeds up, it is possible to control to shift the gas flow path to the outside accordingly. This effect can be used to adjust the growth rate inside and outside the substrate.

Since the inside of the exhaust system pipe is also heated, unreacted gas grows at low temperature, making it difficult to produce particles that cause film defects. Thus, the problems 1, 2 and 3 have been solved.

According to the invention which concerns on Claim 4, the temperature measurement which measured the emitted light from a substrate surface, and the measurement of the light reflectivity depending on the roughness of the surface are attained. Since the rotating susceptor rotates, measurement data corresponding to each blade can be acquired in conjunction with the rotation angle.

According to the fifth aspect of the present invention, since the cover on which the substrate is placed can be removed, the attached film can be cleaned by cleaning only the cover without disassembling and removing the entire susceptor.

According to the invention which concerns on Claim 6 and 7, since the CVD gas is supplied via the heating joint heated at 200 degreeC or more, the said gas does not remain in gas piping. Since there is no remaining gas, particles that are often formed by the reaction of the remaining adsorbed gas and air in the piping do not occur. Since the reaction system is always kept clean, it contributes to reducing film quality, especially crystal defects. This is the solution to Problem 4. A coaxial cylinder resistance heating element has a maximum temperature at the center and a lower temperature at the outer cylinder, thus providing a heat-insulating structure.

According to the inventions according to claims 8 and 9, even a raw material gas that cannot be handled as a gas at room temperature can be introduced into the reaction chamber as a gas to form a film.
For example, when Ga metal is used as a solid raw material and hydrochloric acid is used as a reaction gas, a gas of gallium chloride can be generated. When this generated gas is introduced into the reaction chamber while being kept at a high temperature of 750 ° C., for example, and reacted with ammonia NH 3 at 1000 to 1200 ° C., a GaN crystal film can be grown.

If the supply of gallium chloride and ammonia is arranged on the circumference around which the rotating blade susceptor rotates, the adsorption and nitridation of the gallium can be performed for each atomic layer, so that the growth apparatus is capable of atomic layer epitaxy. When the gas supply source to be arranged is, for example, an In chloride and a gallium chloride, it is possible to grow by controlling to a mixed crystal of GaN-InN.

According to the invention which concerns on Claim 10, it can be made to react at the temperature to about 1200 degreeC, maintaining the reaction chamber which does not contain an impurity. A silicon carbide coating makes it even cleaner.

According to the eleventh aspect of the present invention, it is possible to grow a silicon film and a germanium film. When a gas containing carbon (carbon graphite), for example, propane and silicon chloride are reacted, a crystal film of silicon carbide can be grown.

Crystals of GaN, AlN, and InN and mixed crystal films thereof can be grown by reacting gallium, aluminum, and indium chloride with ammonia. When zinc chloride and oxygen are reacted, a crystal film of zinc oxide can be grown.

Doping is possible by reacting a gas containing silicon or magnesium with the gas for growing GaN. When phosphorus or boron is reacted with silane gas or silane chloride gas, a doped silicon crystal film can be grown. Further, it is possible to grow a laminated film of these crystal films by continuous growth with the gas switched.

FIG. 1 is a schematic diagram of the structure of a vapor phase growth apparatus disclosed in JP-A-60-090894. FIG. 2 is a schematic diagram of the structure of a vapor phase growth apparatus disclosed in JP-A-60-090894. FIG. 3 is a structural schematic diagram of a rotating blade susceptor. FIG. 4 is a schematic view of a susceptor cover. FIG. 5 is a schematic view of a crystal growth apparatus for a rotating blade susceptor. FIG. 6 is a structural schematic diagram of a heating joint.

FIG. 3 is a schematic diagram of the basic structure of the present invention.

Like a turbine blade, a blade susceptor 301 is disposed around the susceptor shaft 302 with an inclination. The inclination angle of the blade susceptor can be arbitrarily designed. A wafer 304 as a substrate is placed on the susceptor upper surface 303. The wafer 304 is not placed on the susceptor lower surface 305.

The susceptor shaft 302 rotates. An exhaust hole 306 serving as a gas passage is disposed in the shaft 302, and the gas passes through the hole 306 and is exhausted through the center of the shaft 302. This susceptor will be referred to as a rotating blade susceptor 300. The rotating blade susceptor is heated.

The rotating blade susceptor functions as an exhaust device in addition to rotating as the susceptor. By controlling the rotation speed, the exhaust speed and the linear speed of the gas on the substrate are controlled.

The wafer 304 is placed on the blade. However, when the number of blades is increased, it is difficult to process the pocket on which the wafer is placed. Also, if the growth film adheres directly to the susceptor, it is troublesome to disassemble and recover for cleaning. Although an example of the number of blades that overlap is shown, the blades do not overlap due to the inclination angle. In addition, although the example in which the susceptor shaft 302 is circular is shown, it may be polygonal.

FIG. 4 is a schematic view of a susceptor cover.

A susceptor cover 403 with a wafer pocket 402 is attached so as to sandwich the blade susceptor 401. The susceptor is SiC coated graphite. If the heating method is lamp heating or resistance heating, it can be made of ceramics of SiC or AlN, or quartz. The blade susceptor 401 can be integrated with the shaft 302 or can be made integrally therewith. The above is the basic embodiment of the invention.

As an example, FIG. 5 shows a schematic diagram of the structure of a rotary blade susceptor vapor phase growth apparatus.

The structure will be described. The blade susceptor is attached to the susceptor shaft 501 of the rotating blade susceptor, and the susceptor cover 502 is attached thereon. A 4-inch silicon wafer 503 is placed on the cover 502. The susceptor shaft 501 is connected to the rotation mechanism 504 and rotates. The joint area of the rotation mechanism is surrounded by a cover 505. The cover 505 is made of quartz. The shaft may be polygonal or not circular.

The rotation mechanism 504 is fixed to the vertical flange 506 and moved up and down by the vertical movement mechanism 507. The upper and lower flanges 506 are vacuum-sealed with a base flange 508 and an O-ring (not shown). The flange is water cooled by a water cooling mechanism 509.
The reaction chamber 510 is stainless steel. A water-cooled induction heating coil 511 is installed through the reaction chamber. The coil is surrounded by a quartz cover 512.

When an induction current is passed through the induction heating coil 511 at 20 KHZ, for example, the component blade susceptor made of carbon graphite is heated. An induced current flows in the blade. A susceptor shaft 501 made of carbon graphite is also heated in the same manner. When heated, the radiant heat heats around, so the temperature is balanced in a uniform direction.

However, the temperature is not arbitrary depending on the degree of heat dissipation. In order to correct this, a lamp heater 513 is provided. The same display represents the lamp heater. The lamp heater 513 is provided on the upper flange 514 in addition to the upper and lower flanges 506. Each power can be adjusted individually. The upper flange 514 can be moved by a vertical movement mechanism 515. This movement is used for maintenance. In order to measure the light reflectivity depending on the temperature of the substrate and the roughness of the surface, the temperature or light reflectivity is measured so that the blade susceptor is viewed vertically according to the angle of the inclined blade. Sets the optical path axis of the measuring device.

A gas introducer 516 is attached to the upper flange 514 via a heating joint 517. The detailed structure of the heating joint 517 is shown in FIG. The heating joint 517 is a gas pipe maintained at a temperature of 200 ° C. or higher at the lowest. Even for a gas that becomes solid or liquid at room temperature, temperature control is performed so that the gas is not liquefied or solidified in the passage.

The gas in the heating joint 517 is dispersed by a dispersion plate 518 made of carbon graphite. The introduced gas sucked by the rotating blade susceptor passes over the wafer 503 and is exhausted through the exhaust hole 305. The gas flow is shown in the figure by dotted lines.

The exhaust pipe 519 is provided with a heated reaction promoting rod 520 and can be heated to 1000 ° C. or more by being supplied with electric power from the terminal 521. Residual gas that did not contribute to the film growth on the wafer by reacting with the reaction promoting rod 520 at high temperature is attached here, and the residual gas goes to the exhaust system including the pump after the exhaust port 522 and is powdered at low temperature. Prevent product formation.

A purge gas is supplied to each part of the reaction chamber 510. The window purge gas 523, the rotating connection purge gas 524, the coil purge gas 525, and the reaction chamber purge gas 526 that prevent the lamp heater window from fogging are nitrogen.
The structural example of the crystal growth apparatus for the rotating blade susceptor has been shown in the schematic diagram.

The heating joint 517 used as a component in the above description is shown in detail in FIG.

A component that guides the raw material gas from the gas introducing device 516 to the dispersion vessel 527 while maintaining the high temperature and controlling the temperature is a heating joint 517.

A heater 603 for heating the gas introduction pipe 602 is attached to the lower flange 601. The gas introduction pipe 602 is a quartz pipe. The gas introduction pipe may be metal, carbon graphite, or ceramics. The heater 603 is a coaxial carbon graphite heater. When the coaxial cylindrical carbon graphite is divided into two by the heater slit 604, one heater circuit is formed from the carbon graphite heater electrode 1 (605) to the carbon graphite heater electrode 2 (606).

The electrodes are connected to power introduction terminals 1 and 2 (609 and 610) by carbon graphite cap nuts 607 and 608 made of the same material. When the power introduction terminals 1 and 2 (609 and 610) are energized, the carbon graphite heater 603 is heated. The carbon graphite heater is made of carbon graphite, and the surface thereof is covered with silicon carbide except for the electrical contact surface.

Here, carbon graphite is selected as the heater material, but other materials such as metals such as tungsten, high-temperature heat-resistant materials such as boron nitride, lanthanum boride, and silicon carbide may be used. The ceramic insulating plate 611 insulates the lower flange 601 and the heater electrodes 605 and 606. Although an example of a single-phase two-electrode heater is shown here, it is possible to freely design a three-phase heater by adding three heater slits.

The insulated double tube 612 performs thermal insulation and electrical insulation between the casing and the heater. The effect is improved by double, but depending on the temperature, solid quartz or ceramic tube may be used. It is also possible to design freely to increase to triple or quadruple.

A thermocouple TC is provided to monitor the internal temperature through the insulated double pipe 612 and the outer peripheral heater of the carbon graphite heater 603.
The upper flange 613 is provided with a guide disk 614, and purge gas is introduced from the purge gas pipe 615. The purge gas passes through the back surface of the guide disk 614, part passes through the gas introduction pipe 602, and part passes through the carbon graphite heater.

The guide disk is quartz for thermal insulation. The guide disk may be other materials, such as carbon graphite or ceramics.
The heating joint 600 described above guides the gas introduced from the upper guide disk 614 at a high temperature or the gas obtained by bubbling the liquid to the dispersion vessel 516 while maintaining the high temperature without lowering the temperature. The apparatus structure and the heated joint component structure have been described in the first embodiment.

Example 2 is an example of silicon film formation.

Trichlorosilane SiHCl ₃ supplied as a liquid was used as a gas used for film formation.
Since this is a liquid at room temperature, it is sent out by bubbling with hydrogen. Bubbling gas was passed from the bubbler to the heating joint 517.

As the substrate 503, a high-concentration n-type 4-inch silicon substrate having a (111) plane inclined by 4 degrees in the <211> direction as a main surface was used. Here, no sign meaning minus is added to the index. The reason for tilting the axis is to provide steps on the main surface with a constant density.

Hydrogen (H ₂ ) gas was introduced as a carrier gas together with trichlorosilane (SiHCl ₃ ). The temperature of the heating joint 517 was set to 250 ° C. The number of rotations of the susceptor shaft 501 that supports the rotating blade susceptor was 60 rotations per minute.

The internal pressure of the reaction chamber 510 was controlled to a reduced pressure of 200 Pa by adjusting the exhaust amount of an exhaust pump (not shown). The blade susceptor was heated by the induction coil 511 and the lamp heater 513 so that the temperature of the silicon substrate was 1000 ° C.

The temperature of the silicon substrate was measured by an infrared radiation thermometer installed at an angle at which the substrate 503 (not shown) is viewed vertically. The substrate temperature was set to 1000 ° C. The temperature of the reaction promoting rod 520 was 1100 ° C.

Film thickness was measured using an infrared Felier spectrometer. A silicon epitaxial film was grown at a growth rate of about 300 nm / min.

Example 3 is an example of gallium nitride GaN film formation.

The gas inlet 516 contains solid gallium and is heated to 800 ° C. The gallium melts. In addition, gallium chloride is generated in the gas introducing device 516 through hydrochloric acid gas. Since the generated gallium chloride is a solid at room temperature, it must be transported while maintaining a high temperature.

Heated hydrogen for transporting gallium chloride vaporized at high temperatures is directed to a gas introducer 516. The vaporized gallium chloride is guided to the heating joint 517 by the heated hydrogen of the carrier gas.

The temperature of the heating joint 517 was set to 750 ° C. The vaporized gallium chloride led to the dispersion vessel 527 via the heating joint 517 is dispersed by the dispersion plate 518 together with the carrier hydrogen and reaches the substrate 503 in the reaction chamber 510.

On the other hand, ammonia NH 3 gas was introduced from another heating joint (not shown) installed on the same circumference as the heating joint 517. Ammonia gas encounters and mixes with gallium chloride in the dispersion vessel 527. Ammonia NH 3 also reaches the substrate 503.

As the substrate 503, a 4-inch sapphire wafer (C surface), which is a different substrate, was used. As the C plane, a substrate inclined by 2 degrees from the positive direction was used. The reason for using the tilted substrate is to increase the step density (see Patent Document 2). This is an example of heterocrystal growth because the composition of the crystal film is different from the substrate.

The reaction chamber 510 is evacuated to eliminate the atmosphere. After evacuation, nitrogen is supplied from the gas supply pipes 523, 524, 525, and 526, and the vacuum is again applied for purging.

The rotating blade susceptor is heated while introducing hydrogen under reduced pressure. The temperature of the substrate 503 was measured by a radiation thermometer installed at an angle at which the substrate (not shown) is viewed vertically. The temperature was set at 1000 ° C.

The rotational speed of the susceptor shaft 501 of the rotating blade susceptor was set to 60 revolutions per minute. The internal pressure of the reaction chamber 510 was controlled to a reduced pressure of 200 Pa by adjusting the exhaust amount of an exhaust pump (not shown) and controlled by heating with an induction coil 511 and a lamp heater 513 so that the temperature of the sapphire substrate was 1000 ° C. . The temperature of the reaction promoting rod 520 was 1100 ° C.

The film thickness was measured. It was possible to grow the GaN film at a growth rate of 1000 nm / min or more depending on the amount of gas introduced.

Example 4 is an example of silicon carbide SiC film formation.

A crystal film of silicon carbide (SiC) is grown on a 4-inch silicon substrate.

Since it is a liquid at room temperature, trichlorosilane (SiHCl ₃ ) is bubbled with hydrogen and sent out. Trichlorosilane (SiHCl ₃ ) was passed from the bubbler (not shown) to the heating joint 517 together with a hydrogen carrier.

As the substrate 503, a p-type 4-inch silicon substrate having a (111) plane inclined by 4 degrees in the <211> direction as a main surface was used. Here, no sign meaning minus is added to the index. The reason for tilting the axis is to provide steps on the main surface with a constant density. This technique of tilting the axis was already published in Patent Document 2 in 1987.

The temperature of the heating joint 517 was 250 ° C. On the other hand, propane gas C3H8 was introduced from another heating joint (not shown) installed on the same circumference as the heating joint 517. Propane meets trichlorosilane (SiHCl ₃ ) and a hydrogen carrier in a dispersion vessel 527.

The rotational speed of the susceptor shaft 501 of the rotating blade susceptor was set to 60 revolutions per minute. The internal pressure of the reaction chamber 510 was controlled to a reduced pressure of 200 Pa by adjusting the exhaust amount of an exhaust pump (not shown), and the silicon substrate was heated to 1000 ° C. by the induction coil 511 and the lamp heater 513. The temperature of the reaction promoting rod 520 was 1100 ° C.

It was possible to grow cubic 3C-SiC on the silicon substrate at a rate of 25 to 45 nm / min depending on the gas flow rate. The grown SiC film showed a sharp (111) X-ray diffraction peak. The surface was so smooth that electron diffraction of the streak pattern was observed.
As described above, an apparatus for vapor-phase growth of a crystal film on a substrate in a large batch was manufactured.

The present invention is suitable for a technique for manufacturing LEDs and compound semiconductor LSIs at low cost because a crystal film can be manufactured at low cost and at high speed from a solid or liquid raw material with a large batch size.

4 Substrate 11 Susceptor 12 Cylinder reaction chamber 13 Raw material blowing nozzle 14 Exhaust port 15 Substrate rotation introducer 16 Heater 300 Rotating blade susceptor 301 Blade susceptor 302 Susceptor shaft 303 Susceptor upper surface 304 Wafer 305 Susceptor lower surface 306 Exhaust hole 401 Blade susceptor 402 Wafer pocket 403 Susceptor cover 404 susceptor shaft 501 susceptor shaft 502 susceptor cover 503 substrate 504 rotation mechanism 505 cover 506 vertical flange 507 vertical movement mechanism 508 base flange 509 water cooling mechanism 510 reaction chamber 511 induction coil 512 quartz cover 513 lamp heater 514 upper flange 515 vertical movement mechanism 516 Gas introducing device 517 Heating joint 518 Dispersion plate 519 Exhaust pipe 520 Reaction promoting rod 521 End 522 outlet 523 window purge gas 524 connection portion purge gas 525 coil purge gas 526 reaction chamber purge gas 527 dispersion vessel 600 heated joint 601 the lower flange 602 gas introduction pipe 603 carbon graphite heater 604 heating slit 605 carbon graphite heater electrode 1
606 Carbon graphite heater electrode 2
607 Carbon graphite cap nut 608 Carbon graphite cap nut
609 Power introduction terminal 1
610 Power introduction terminal 2
611 Ceramic insulating plate 612 Insulating double pipe 613 Upper flange 614 Guide disk 615 Purge gas pipe

Claims (11)

Provided with a rotatable rotating blade susceptor that tilts a plurality of susceptors for supporting and heating the substrate and arranged in a blade shape. The heated rotating blade susceptor rotates to suck and exhaust CVD gas, and the CVD gas decomposes. Then, a manufacturing apparatus for growing a film on the substrate placed on the susceptor. The manufacturing apparatus according to claim 1, further comprising a shaft for rotating the rotating blade susceptor, the inside of the shaft being connected to a CVD exhaust pipe, and a mechanism for heating the inside of the exhaust pipe. The manufacturing apparatus according to claim 1, wherein the heating is performed by induction heating, lamp heating, resistance heating, or a combination thereof. 4. The manufacturing apparatus according to claim 1, wherein an optical path axis of a measuring device for measuring temperature or light reflectance of the blade susceptor is set so that the inclined blade susceptor is vertically viewed. The manufacturing apparatus according to claim 1, wherein the substrate includes a removable cover on a surface of the blade susceptor, and the substrate is placed on the cover. The manufacturing apparatus according to claim 1, wherein the CVD gas is supplied via a heating joint heated to 200 ° C. or higher even if the CVD gas is low. 2. The heating of the heating joint is performed by passing a current through a plurality of coaxial resistance heating elements, and the CVD gas is supplied through a central cylinder resistance heating element. The manufacturing apparatus of -6. The CVD gas is a vaporized gas obtained by heating and vaporizing a solid material, or a reaction gas generated by reacting with a gas containing halogen or hydrogen capable of reacting with the solid material. 7. The manufacturing apparatus according to 7. The CVD gas is a vaporized gas obtained by heating and vaporizing a solid material, or a reaction gas generated by reacting with a gas containing halogen or hydrogen capable of reacting with the solid material. 8. The manufacturing apparatus according to 8. The manufacturing apparatus according to claim 1, wherein the susceptor and the resistance heating element are made of carbon graphite. The film is a semiconductor film containing silicon, germanium, carbon graphite, gallium, aluminum, indium, zinc, nitrogen, oxygen, magnesium, phosphorus, boron, or a plurality thereof, or a laminated film thereof. The manufacturing apparatus according to claim 1.