CN111498793B - MEMS device and processing method thereof - Google Patents
MEMS device and processing method thereof Download PDFInfo
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- CN111498793B CN111498793B CN202010368582.4A CN202010368582A CN111498793B CN 111498793 B CN111498793 B CN 111498793B CN 202010368582 A CN202010368582 A CN 202010368582A CN 111498793 B CN111498793 B CN 111498793B
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- 238000003672 processing method Methods 0.000 title abstract description 9
- 230000002209 hydrophobic effect Effects 0.000 claims abstract description 32
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 244000126211 Hericium coralloides Species 0.000 claims description 8
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 76
- 230000008569 process Effects 0.000 description 27
- 238000000231 atomic layer deposition Methods 0.000 description 15
- 238000005530 etching Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000000708 deep reactive-ion etching Methods 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
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- 101710162828 Flavin-dependent thymidylate synthase Proteins 0.000 description 2
- 101710135409 Probable flavin-dependent thymidylate synthase Proteins 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
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- 230000005496 eutectics Effects 0.000 description 2
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- 238000001704 evaporation Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
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- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- -1 ta2O3 Inorganic materials 0.000 description 2
- VIFIHLXNOOCGLJ-UHFFFAOYSA-N trichloro(3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecyl)silane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CC[Si](Cl)(Cl)Cl VIFIHLXNOOCGLJ-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- FRIKWZARTBPWBN-UHFFFAOYSA-N [Si].O=[Si]=O Chemical compound [Si].O=[Si]=O FRIKWZARTBPWBN-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 238000007385 chemical modification Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
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- 239000000463 material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- QRPMCZNLJXJVSG-UHFFFAOYSA-N trichloro(1,1,2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-henicosafluorodecyl)silane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)[Si](Cl)(Cl)Cl QRPMCZNLJXJVSG-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00206—Processes for functionalising a surface, e.g. provide the surface with specific mechanical, chemical or biological properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0242—Gyroscopes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0136—Comb structures
Abstract
The invention provides an MEMS device and a processing method thereof, wherein the MEMS device comprises a movable component, and a dielectric layer and a hydrophobic layer are sequentially arranged on the surface of the movable component. The processing method of the MEMS device comprises the following steps: forming a movable structural layer, the movable structural layer including a movable component; depositing a dielectric layer; a hydrophobic layer is deposited.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to an MEMS device and a processing method thereof.
Background
MEMS (Micro Electro Mechanical System, microelectromechanical systems) devices have become more and more widely used in products such as consumer electronics, medical, automotive, etc. due to their small size, low cost, good integration, etc. Common MEMS devices include, but are not limited to, pressure sensors, magnetic sensors, microphones, accelerometers, gyroscopes, infrared sensors, and the like.
During the MEMS wafer manufacturing process, many movable components, such as comb teeth, can generate contact due to capillary phenomenon and shaking; similarly, during actual use, the teeth of the comb are brought into contact by acceleration. If these contacts cannot be self-recovered apart, known as stiction, it can cause the MEMS device to fail or the chip to burn out, as shown in fig. 1.
A common solution is to hydrophobically modify the surface of a silicon structure with a long carbon chain polymer of silane groups (e.g., perfluorodecyltrichlorosilane, FDTS) by means of Self-assembled films (Self-Assembly Monolayer, SAM). These chemical molecules change the chemical properties of the silicon surface, reduce the surface chemical energy, and reduce the probability of sticking. However, this layer of chemical film cannot avoid the short circuit problem caused by the contact of the comb teeth during the use process, and at the same time, the thermal stability is also poor, and often, breakage is generated in the subsequent process flow, so that the probability of sticking is increased and the vacuum degree of the cavity is affected, as shown in fig. 2.
Disclosure of Invention
In view of the shortcomings in the prior art, the invention provides a MEMS device which comprises a movable component, wherein a dielectric layer and a hydrophobic layer are sequentially arranged on the surface of the movable component.
Further, the dielectric layer is silicon oxide.
Further, siOx is used for the dielectric layer, where x=0.1 to 2.
Further, the dielectric layer has a thickness in the range of 1 to 10000 angstroms.
Further, the hydrophobic layer is made of metal oxide or metal nitride.
Further, the hydrophobic layer adopts HfOx, wherein x=0.1 to 2.
Further, the thickness of the hydrophobic layer ranges from 1 to 10000 angstroms.
The invention also provides a MEMS device processing method, which comprises the following steps:
forming a movable structural layer, the movable structural layer including a movable component;
depositing a dielectric layer;
a hydrophobic layer is deposited.
Further, a first wafer is provided, the movable structural layer being arranged in connection with the first wafer.
Further, the first wafer is a cap wafer or an interconnect wafer of the MEMS device.
Further, the dielectric layer is silicon oxide.
Further, siOx is used for the dielectric layer, where x=0.1 to 2.
Further, the dielectric layer has a thickness in the range of 1 to 10000 angstroms.
Further, the hydrophobic layer is made of metal oxide or metal nitride.
Further, the hydrophobic layer adopts HfOx, wherein x=0.1 to 2.
Further, the thickness of the hydrophobic layer ranges from 1 to 10000 angstroms.
The technical effects are as follows:
the invention forms a dielectric layer/hydrophobic layer double-layer structure on the surface of silicon wafer by using the common oxide of semiconductor, such as silicon oxide/hafnium oxide (SiOx/HfOx), so that the surface can maintain hydrophobic property, the water contact angle of the HfOx surface can be more than 100 degrees, and SiOx can be used as a short circuit barrier. Compared with chemical molecules used in the traditional SAM, the double-layer film has better thermal stability and surface coverage rate, and can effectively reduce the surface chemical property attenuation caused in the manufacturing process and the use process.
The conception, specific structure, and technical effects of the present invention will be further described with reference to the accompanying drawings to fully understand the objects, features, and effects of the present invention.
Drawings
FIG. 1 is a schematic diagram of the sticking of a comb structure in a MEMS device;
FIG. 2 is a schematic illustration of chemical modification of a comb structure surface in a MEMS device using FDTS;
FIG. 3 is a schematic view of the structure of a preferred embodiment of the present invention;
FIG. 4 is a schematic view of the structure at A in FIG. 3;
FIGS. 5 to 8 are schematic views of structures during processing according to an embodiment of the present invention;
FIGS. 9 to 11 are schematic views of structures during processing according to another embodiment of the present invention;
FIG. 12 is a schematic view of a partially enlarged structure, as exemplified by the structure of FIG. 8, in which two sets of comb structures are exemplarily shown with different dielectric layer coverage.
Detailed Description
In the description of the embodiments of the present invention, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the invention. The drawings are schematic diagrams or conceptual diagrams, and the relationship between the thickness and the width of each part, the proportional relationship between each part, and the like are not completely consistent with the actual values thereof.
Fig. 3 shows the MEMS device of the present embodiment, which includes a movable structure layer 100, a wafer 200, and a wafer 300. The movable structure layer 100 is provided with a movable component 101, such as comb teeth; the wafer 200 is provided with a deep groove 201, and the movable assembly 101 is arranged at a position matched with the deep groove 201; circuits and lines are fabricated on wafer 300 for interconnection with structures on movable structural layer 100. The wafer 300, the movable structure layer 100 and the wafer 200 are stacked in order, and the movable structure layer 100 is connected to the wafer 200 and the wafer 300, respectively, for example, by bonding.
As shown in fig. 4, a double-layered film, which is a dielectric layer 102 and a hydrophobic layer 103, respectively, is provided on the movable element 101 of the movable structure layer 100. A dielectric layer 102 is provided on the surface of the movable assembly 101, and a hydrophobic layer 103 is provided on the surface of the dielectric layer 102 remote from the movable assembly 101.
In this embodiment, the dielectric layer 102 is made of silicon oxide SiOx, where x=0.1 to 2, and the thickness ranges from 1 to 10000 angstroms.
The hydrophobic layer 103 may be made of metal oxide or metal nitride such as Al, which is commonly used in semiconductor processing 2 O 3 、Ta 2 O 3 TiN, etc. In this embodiment, the hydrophobic layer 103 is hafnium oxide HfOx, where x=0.1 to 2, and the thickness ranges from 1 to 10000 angstroms.
The MEMS device of the embodiment is provided with a double-layer surface structure for reducing comb teeth adhesion and short circuit. The double-layer dielectric layer grows on the surface of the structure to achieve insulation and surface modification, so that the functions of short circuit prevention and adhesion prevention are achieved simultaneously.
A method for processing a MEMS device of this embodiment includes:
the wafer 200 is provided, and the wafer 200 may be, for example, a silicon wafer.
A deep groove 201 is formed on the wafer 200, the pattern of the deep groove 201 is matched with the pattern of the movable component 101 to be processed later, and the etching of the movable component 101 to be formed later is mainly located in the area where the deep groove 201 is located.
The formation of the deep groove 201 is performed by performing a photolithography/etching process on the wafer 200, such as exposing and developing after coating photoresist, to form a pattern of the deep groove 201, etching the exposed wafer 200 to a predetermined depth by etching, and performing a photoresist removing process, thereby forming the deep groove 201. Wet etching may also be used to shorten the processing time in view of the deeper depth of deep trench 201. In some embodiments, a hard mask layer, such as silicon oxide, silicon nitride, etc., may be deposited on the wafer 200 to form a pattern of the deep trench 201 by patterning the hard mask layer through a photolithography/etching process, and then etching the exposed wafer 200 to a predetermined depth by an etching process, such as wet etching, to form the deep trench 201.
A wafer 400 is provided, the wafer 400 being used to form the movable structure layer 100. As shown in fig. 5, the wafer 200 is bonded to the wafer 400, specifically, a bonding dielectric layer is deposited on the surface of the wafer 200, in this embodiment, silicon dioxide is used as the bonding dielectric layer, and the wafer 200 is bonded to the wafer 400 by using silicon-silicon dioxide fusion bonding.
The wafer 400 is thinned to a predetermined thickness, thereby forming the movable structure layer 100.
The movable assembly 101 is formed by deep reactive ion etching (Deep Reactive Ion Etching, DRIE) at the region of the movable structure layer 100 facing the deep trench 201, as shown in fig. 6. A photolithographic process, such as photoresist or a hard mask, is also required to define the pattern of the movable element 101 prior to DRIE execution.
A dielectric layer 102 is deposited covering the surface of the movable assembly 101. The deposition process may include low pressure chemical vapor deposition (Low Pressure Chemical Vapor Deposition, LPCVD) and plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD), physical vapor deposition (Physical Vapor Deposition, PVD), atomic layer deposition (Atomic Layer Deposition, ALD), thermal oxidation, e-beam evaporation and/or other suitable deposition techniques or combinations of the foregoing, in which the silicon oxide SiOx is deposited using an In-situ vapor generation process (In-Situ Steam Generation, ISSG), where x=0.1-2, and the thickness ranges from 1 to 10000 angstroms, and may be selected and adjusted within the above-described range depending on the process capability and the process dimensions of the device.
A hydrophobic layer 103 is deposited covering the surface of the movable element 101, in particular the surface of the dielectric layer 102 that has been formed on the surface of the movable element 101. The hydrophobic layer 103 may be a metal oxide or a metal nitride commonly used in semiconductor processing, such as Al2O3, ta2O3, tiN, etc. The deposition process may employ a Sputtering process (Sputtering) or atomic layer deposition (Atomic Layer Deposition, ALD) to achieve better surface coverage. In this embodiment, hafnium oxide HfOx is deposited by ALD, where x=0.1-2, and the thickness ranges from 1 to 10000 angstroms, and may be selected and adjusted within the above-mentioned range according to the process capability and the process size of the device.
As shown in fig. 7, a bonding metal 104, in this embodiment metallic germanium, is formed on the movable structure layer 100 for subsequent bonding with the wafer 300. In other embodiments, bond metal 104 is processed after wafer 400 is thinned and before movable element 101 is formed.
A wafer 300 is provided, the wafer 300 having fabricated circuitry and wiring for interconnecting with structures on the movable structural layer 100.
The bonding metal medium matching with the bonding metal 104 on the movable structure layer 100 is disposed on the wafer 300, in this embodiment, aluminum is used as the bonding metal on the wafer 300, and the aluminum material used in the actual process may be doped with a trace amount of silicon or/and copper.
The movable structure layer 100 and the wafer 300 are bonded and connected, specifically, eutectic bonding is performed by bonding metal germanium on the movable structure layer 100 and bonding metal aluminum on the wafer 300, so as to form the structure shown in fig. 8.
Another processing method of the MEMS device of the present embodiment includes:
wafer 300 is provided, and wafer 300 has been fabricated with circuitry and wiring for interconnecting with structures on wafer 200.
The movable structure layer 100 and the wafer 300 are bonded together, and specifically, the two may be connected by eutectic bonding, and the bonding process is the same as that described in the previous processing method, which is not described herein again, as shown in fig. 9.
A dielectric layer 102 is deposited covering the surface of the movable assembly 101. The deposition process may include low pressure chemical vapor deposition (Low Pressure Chemical Vapor Deposition, LPCVD) and plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD), physical vapor deposition (Physical Vapor Deposition, PVD), atomic layer deposition (Atomic Layer Deposition, ALD), thermal oxidation, e-beam evaporation and/or other suitable deposition techniques or combinations of the foregoing, in which the silicon oxide SiOx is deposited using an In-situ vapor generation process (In-Situ Steam Generation, ISSG), where x=0.1-2, and the thickness ranges from 1 to 10000 angstroms, and may be selected and adjusted within the above-described range depending on the process capability and the process dimensions of the device.
A hydrophobic layer 103 is deposited covering the surface of the movable element 101, in particular the surface of the dielectric layer 102 that has been formed on the surface of the movable element 101, as shown in fig. 10. The hydrophobic layer 103 may be a metal oxide or a metal nitride commonly used in semiconductor processing, such as Al2O3, ta2O3, tiN, etc. The deposition process may employ a Sputtering process (Sputtering) or atomic layer deposition (Atomic Layer Deposition, ALD) to achieve better surface coverage. In this embodiment, hafnium oxide HfOx is deposited by ALD, where x=0.1-2, and the thickness ranges from 1 to 10000 angstroms, and may be selected and adjusted within the above-mentioned range according to the process capability and the process size of the device.
A wafer 200 is provided, the wafer 200 being provided with deep grooves 201, the pattern of the deep grooves 201 being matched to the movable assembly 101.
The wafer 200 is bonded to the movable structure layer 100, and the bonding process is the same as that described in the previous processing method, and is not repeated here, so as to form the structure shown in fig. 11.
It is further noted herein that the coverage of the surface film of the movable assembly 101 may not be as desirable as that shown in fig. 8 and 11, depending on the selection of different processes and the limitations of the equipment process capabilities. Taking fig. 8 as an example, for the cavity 202 defined by the movable structure layer 100 and the wafer 200, the double-layer film may not cover the inner wall of the cavity 202 as well as the inner wall of the cavity 202, i.e., the wall of the deep groove 201 and the back surface of the movable element 101, as shown in the figure.
Specifically, for the first thin film dielectric layer 102, furnace thermal oxidation or ISSG is generally capable of growing a uniform oxide layer on the inner wall of the cavity 202, and for PECVD or PVD, the coverage of the oxide layer on the inner wall of the cavity 202 may not be complete or uniform.
For the second thin film hydrophobic layer 103, the sputtering or ALD process may also be used to provide a less complete or uniform coating of the inner walls of the cavity 202, due to differences in equipment process capabilities.
However, even if the film coverage on the inner wall of the cavity 202 is incomplete as described above, it is essential that the second thin film hydrophobic layer 103 is not completely covered, because the first thin film dielectric layer 102 is thermally oxidized by furnace tube or ISSG to achieve the desired coverage on the inner wall of the cavity 202, and in the worst case, the back surface of the movable assembly 101 is not covered by the hydrophobic layer 103, as shown in fig. 12, two adjacent sets of comb tooth structures 105 are shown in fig. 12, one set is a double dielectric layer is completely covered on the left, and the other set is a comb tooth structure 105 with one side not completely covered on the hydrophobic layer 103. Even so, the technical effect of the present invention is not affected, as shown in fig. 1 and 12, the sticking between the comb teeth occurs on the side surface 106 of the comb tooth structure 105, and the front surface 107 (or the back surface 108) of the adjacent comb tooth structure 105 is not in direct contact, so that the technical effect of the present invention is not affected even if the back surface 108 of the comb tooth structure 105 is not covered with the hydrophobic layer 103, that is, the short circuit prevention and the sticking prevention between the comb teeth can be still realized, and the present invention has better thermal stability compared with the prior art. Therefore, the implementation of the present invention is simple and easy to implement for existing semiconductor manufacturing processes.
The foregoing describes in detail preferred embodiments of the present invention. It should be understood that numerous modifications and variations can be made in accordance with the concepts of the invention by one of ordinary skill in the art without undue burden. Therefore, all technical solutions which can be obtained by logic analysis, reasoning or limited experiments based on the prior art by the person skilled in the art according to the inventive concept shall be within the scope of protection defined by the claims.
Claims (6)
1. The MEMS device comprises a comb tooth structure and is characterized in that a dielectric layer and a hydrophobic layer are sequentially arranged on the surface of the comb tooth structure; the dielectric layer is made of silicon oxide, and the thickness range of the dielectric layer is 1-10000 angstroms; the hydrophobic layer is made of metal oxide or metal nitride, and the thickness of the hydrophobic layer ranges from 1 to 10000 angstroms.
2. The MEMS device of claim 1, wherein the dielectric layer is SiOx, where x = 0.1-2.
3. The MEMS device of claim 1, wherein the hydrophobic layer is HfOx, wherein x = 0.1-2.
4. A method of fabricating a MEMS device, comprising:
forming a movable structure layer, wherein the movable structure layer comprises a comb tooth structure;
depositing a dielectric layer, wherein the dielectric layer adopts silicon oxide, and the thickness range of the dielectric layer is 1-10000 angstroms;
and depositing a hydrophobic layer, wherein the hydrophobic layer adopts metal oxide or metal nitride, and the thickness of the hydrophobic layer ranges from 1 to 10000 angstroms.
5. The method of processing of claim 4, wherein a first wafer is provided, the movable structural layer being disposed in connection with the first wafer.
6. The method of processing of claim 5, wherein the first wafer is a cap wafer or an interconnect wafer of the MEMS device.
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| CN202010368582.4A CN111498793B (en) | 2020-05-01 | 2020-05-01 | MEMS device and processing method thereof |
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| CN202010368582.4A CN111498793B (en) | 2020-05-01 | 2020-05-01 | MEMS device and processing method thereof |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102074574A (en) * | 2009-11-19 | 2011-05-25 | 中国科学院微电子研究所 | Method for forming stack gate of CMOS (Complementary Metal-Oxide-Semiconductor) device and stack gate sturcture |
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| US10029908B1 (en) * | 2016-12-30 | 2018-07-24 | Texas Instruments Incorporated | Dielectric cladding of microelectromechanical systems (MEMS) elements for improved reliability |
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