CN111498793A - MEMS device and processing method thereof - Google Patents

MEMS device and processing method thereof Download PDF

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Publication number
CN111498793A
CN111498793A CN202010368582.4A CN202010368582A CN111498793A CN 111498793 A CN111498793 A CN 111498793A CN 202010368582 A CN202010368582 A CN 202010368582A CN 111498793 A CN111498793 A CN 111498793A
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layer
wafer
movable
mems device
dielectric layer
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CN202010368582.4A
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CN111498793B (en
Inventor
邹波
陈义洋
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Senodia Technologies Shanghai Co Ltd
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Senodia Technologies Shanghai Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00206—Processes for functionalising a surface, e.g. provide the surface with specific mechanical, chemical or biological properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0242—Gyroscopes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0136—Comb structures

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Micromachines (AREA)

Abstract

The invention provides an MEMS device and a processing method thereof. The processing method of the MEMS device comprises the following steps: forming a movable structural layer, wherein the movable structural layer comprises movable components; depositing a dielectric layer; depositing a hydrophobic layer.

Description

MEMS device and processing method thereof
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to an MEMS (micro-electromechanical system) device and a processing method thereof.
Background
MEMS (Micro Electro Mechanical System) devices have been widely used in consumer electronics, medical treatment, and automobiles due to their small size, low cost, and good integration. Common MEMS devices include, but are not limited to, pressure sensors, magnetic sensors, microphones, accelerometers, gyroscopes, infrared sensors, and the like.
In the process of manufacturing the MEMS wafer, a plurality of movable components, such as comb teeth, can be contacted due to capillary phenomenon and shaking; similarly, in actual use, the comb teeth may be brought into contact by acceleration. These contacts, if not allowed to recover from separation by themselves, are said to develop stiction (stiction) which, as shown in fig. 1, can cause failure of the MEMS device or short circuit burn-out of the chip.
A common solution is to use a silane-based long carbon chain polymer (e.g., perfluor-Assembly trichlorosilane, FDTS) to modify the surface of the silicon structure with a Self-assembled film (SAM). These chemical molecules change the chemical properties of the silicon surface, reduce the surface chemical energy, and reduce the probability of sticking. However, the chemical film cannot avoid the short circuit problem caused by the contact of the comb teeth during the use process, and the thermal stability is not good, so that the chemical film is broken in the subsequent process flow to increase the probability of adhesion and affect the vacuum degree of the cavity, as shown in fig. 2.
Disclosure of Invention
In view of the deficiencies of the prior art, the present invention provides a MEMS device comprising a movable component having a surface provided with a dielectric layer and a hydrophobic layer in that order.
Further, the dielectric layer is made of silicon oxide.
Further, SiOx is adopted as the dielectric layer, wherein x is 0.1-2.
Further, the thickness range of the dielectric layer is 1-10000 angstroms.
Further, the hydrophobic layer adopts metal oxide or metal nitride.
Furthermore, the hydrophobic layer adopts HfOx, wherein x is 0.1-2.
Further, the thickness range of the hydrophobic layer is 1-10000 angstroms.
The invention also provides a MEMS device processing method, which comprises the following steps:
forming a movable structural layer, wherein the movable structural layer comprises movable components;
depositing a dielectric layer;
depositing a hydrophobic layer.
Further, a first wafer is provided, and the movable structural layer is arranged to be connected with the first wafer.
Further, the first wafer is a cap wafer or an interconnect wafer of the MEMS device.
Further, the dielectric layer is made of silicon oxide.
Further, SiOx is adopted as the dielectric layer, wherein x is 0.1-2.
Further, the thickness range of the dielectric layer is 1-10000 angstroms.
Further, the hydrophobic layer adopts metal oxide or metal nitride.
Furthermore, the hydrophobic layer adopts HfOx, wherein x is 0.1-2.
Further, the thickness range of the hydrophobic layer is 1-10000 angstroms.
The technical effects are as follows:
the invention uses common oxide of semiconductor to form a double-layer structure of dielectric layer/hydrophobic layer on the surface of silicon chip, such as silicon oxide/hafnium oxide (SiOx/HfOx), so that the surface can maintain hydrophobic property, the water contact angle of HfOx surface can be larger than 100 degrees, and SiOx can be used as short circuit barrier. Compared with the chemical molecules used by the traditional SAM, the double-layer film of the invention has better thermal stability and surface coverage rate, and can effectively reduce the attenuation of the surface chemical characteristics caused in the manufacturing process and the using process.
The conception, the specific structure and the technical effects of the present invention will be further described with reference to the accompanying drawings to fully understand the objects, the features and the effects of the present invention.
Drawings
FIG. 1 is a schematic diagram of comb tooth structure sticking in an MEMS device;
FIG. 2 is a schematic illustration of chemical modification of the surface of comb tooth structures in MEMS devices using FDTS;
FIG. 3 is a schematic structural diagram of a preferred embodiment of the present invention;
FIG. 4 is a schematic view of the structure at A in FIG. 3;
FIGS. 5-8 are schematic views of various structures during processing of an embodiment of the present invention;
FIGS. 9-11 are schematic views of structures during processing of another embodiment of the present invention;
fig. 12 is a schematic diagram of a partial enlarged structure of the structure of fig. 8, which exemplarily shows two groups of comb structures with different coverage of the dielectric layers.
Detailed Description
In the description of the embodiments of the present invention, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc., indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred devices or elements must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the invention. The drawings are schematic diagrams or conceptual diagrams, and the relationship between the thickness and the width of each part, the proportional relationship between the parts and the like are not completely consistent with actual values.
Fig. 3 shows a MEMS device of the present embodiment, which includes a movable structure layer 100, a wafer 200, and a wafer 300. The movable structural layer 100 is provided with movable components 101, such as comb teeth and the like; the wafer 200 is provided with a deep groove 201, and the movable assembly 101 is arranged at a position matched with the deep groove 201; the wafer 300 has circuits and lines fabricated thereon for interconnection with structures on the movable structural layer 100. The wafer 300, the movable structure layer 100 and the wafer 200 are sequentially stacked, and the movable structure layer 100 is connected to the wafer 200 and the wafer 300 respectively, for example, by using a bonding process.
As shown in fig. 4, a movable assembly 101 of a movable structure layer 100 is provided with a double-layer film, namely a dielectric layer 102 and a hydrophobic layer 103. A dielectric layer 102 is arranged on the surface of the movable assembly 101 and a hydrophobic layer 103 is arranged on the surface of the dielectric layer 102 remote from the movable assembly 101.
In this embodiment, the dielectric layer 102 is made of silicon oxide SiOx, where x is 0.1-2 and the thickness is in the range of 1-10000 angstrom.
The hydrophobic layer 103 may be a metal oxide or a metal nitride, such as Al, commonly used in semiconductor process2O3、Ta2O3And TiN, etc. In this embodiment, the hydrophobic layer 103 is hafnium oxide HfOx, wherein x is 0.1 to 2, and the thickness is 1 to 10000 angstrom.
The MEMS device of this embodiment has set up and has reduced the broach and be stained with the double-deck surface structure that glues, short circuit. The double-layer dielectric layer is grown on the surface of the structure to achieve the functions of insulation and surface modification and simultaneously realize short circuit prevention and sticking prevention.
A method of fabricating a MEMS device of the present embodiment includes:
a wafer 200 is provided, and the wafer 200 may be, for example, a silicon wafer.
Deep grooves 201 are formed on the wafer 200, the patterns of the deep grooves 201 are matched with the patterns of movable elements 101 which need to be processed subsequently, and etching for forming the movable elements 101 subsequently is mainly located in the areas where the deep grooves 201 are located.
The formation of the deep trench 201 is performed by performing a photolithography/etching process on the wafer 200, such as coating a photoresist, exposing and developing to form a pattern of the deep trench 201, etching the exposed wafer 200 to a predetermined depth by etching, and performing a photoresist removal process to form the deep trench 201. In view of the deep trench 201, wet etching may be used to shorten the processing time. In some embodiments, the hard mask may also be used as an etching blocking layer, that is, a hard mask layer, such as silicon oxide, silicon nitride, etc., is deposited on the wafer 200, the hard mask layer is patterned by a photolithography/etching process to form a pattern of the deep trench 201, and then an etching process, such as wet etching, is performed to etch the exposed wafer 200 to a predetermined depth, thereby forming the deep trench 201.
A wafer 400 is provided, the wafer 400 being used to form the movable structural layer 100. As shown in fig. 5, the wafer 200 and the wafer 400 are bonded and connected, specifically, a bonding dielectric layer is deposited on the surface of the wafer 200, in this embodiment, silicon dioxide is used as the bonding dielectric layer, and the wafer 200 and the wafer 400 are connected by using silicon-silicon dioxide fusion bonding.
The wafer 400 is thinned to a predetermined thickness, and the movable structure layer 100 is formed.
A Deep Reactive Ion Etching (DRIE) is used to form the movable element 101 in the region of the movable structure layer 100 opposite to the Deep trench 201, as shown in fig. 6. The movable element 101 also needs to be patterned using a photolithographic process, such as photoresist or a hard mask, before DRIE can be performed.
The Deposition process may include low Pressure Chemical Vapor Deposition (L ow Pressure Chemical Vapor Deposition, L PCVD) and Plasma Enhanced Chemical Vapor Deposition (PECVD), Physical Vapor Deposition (PVD), Atomic layer Deposition (Atomic L a layer Deposition, A L D), thermal oxidation, electron beam evaporation, and/or other suitable Deposition techniques or combinations of the foregoing, In this embodiment an In-Situ Vapor generation process (ISSG) is used to deposit silicon oxide SiOx, where x is 0.1-2 and has a thickness In the range of 1-10000 angstroms, which can be selected and adjusted based on process capability and device process size.
The hydrophobic layer 103 is deposited to cover the surface of the movable element 101, specifically, the surface of the dielectric layer 102 formed on the surface of the movable element 101. the hydrophobic layer 103 may be formed by a metal oxide or a metal nitride, such as Al2O3, Ta2O3, TiN, etc. the Deposition process may be a Sputtering process (Sputtering) or an Atomic layer Deposition (Atomic L a layer Deposition, a L D) to obtain a better surface coverage.
As shown in fig. 7, a bonding metal 104, in this embodiment, metal germanium, is formed on the movable structure layer 100 for subsequent bonding connection with the wafer 300. In other embodiments, the bonding metal 104 is processed after thinning of the wafer 400 and before formation of the movable element 101.
A wafer 300 is provided, the wafer 300 having fabricated circuitry and circuitry for interconnection with structures on the movable structural layer 100.
The wafer 300 is provided with a bonding metal medium which is matched with the bonding metal 104 on the movable structural layer 100, in this embodiment, the bonding metal on the wafer 300 is aluminum, and the aluminum material used in the actual process may be doped with a trace amount of silicon or/and copper.
The movable structure layer 100 and the wafer 300 are bonded, specifically, eutectic bonding is performed between the bonding metal germanium on the movable structure layer 100 and the bonding metal aluminum on the wafer 300, so as to form the structure shown in fig. 8.
Another processing method of the MEMS device of the present embodiment includes:
a wafer 300 is provided, the wafer 300 having fabricated circuitry and lines for interconnecting with structures on the wafer 200.
The movable structure layer 100 and the wafer 300 are bonded, and specifically, the movable structure layer and the wafer 300 can be bonded through eutectic bonding, and the bonding process is the same as that described in the above processing method, and is not repeated here, as shown in fig. 9.
The Deposition process may include low Pressure Chemical Vapor Deposition (L ow Pressure Chemical Vapor Deposition, L PCVD) and Plasma Enhanced Chemical Vapor Deposition (PECVD), Physical Vapor Deposition (PVD), Atomic layer Deposition (Atomic L a layer Deposition, A L D), thermal oxidation, electron beam evaporation, and/or other suitable Deposition techniques or combinations of the foregoing, In this embodiment an In-Situ Vapor generation process (ISSG) is used to deposit silicon oxide SiOx, where x is 0.1-2 and has a thickness In the range of 1-10000 angstroms, which can be selected and adjusted based on process capability and device process size.
The method comprises the steps of depositing a hydrophobic layer 103 to cover the surface of the movable assembly 101, specifically, the surface of the dielectric layer 102 formed on the surface of the movable assembly 101, as shown in fig. 10, wherein the hydrophobic layer 103 may be formed by a metal oxide or a metal nitride, such as Al2O3, Ta2O3, TiN, etc., which are commonly used in semiconductor manufacturing processes, and the Deposition process may be a Sputtering process (Sputtering) or an Atomic layer Deposition (Atomic L a layer Deposition, a L D) to obtain a better surface coverage rate.
A wafer 200 is provided, the wafer 200 being provided with deep grooves 201, the pattern of the deep grooves 201 cooperating with the movable element 101.
The wafer 200 and the movable structure layer 100 are bonded and connected, and the bonding process is the same as that described in the above processing method, which is not described herein again, so that the structure shown in fig. 11 is formed.
It is further noted that depending on the choice of different processes and the limitations of the equipment process capabilities, the film coverage of the surface of the movable assembly 101 may not be as desirable as that shown in fig. 8 and 11. Taking fig. 8 as an example, for the cavity 202 defined by the movable structural layer 100 and the wafer 200, the coverage of the inner wall of the cavity 202 by the double-layer film may not be as ideal as shown, and the inner wall of the cavity 202 is substantially the wall of the deep groove 201 and the back surface of the movable element 101.
In particular, furnace thermal oxidation or ISSG is typically possible to grow a uniform oxide layer on the inner walls of the cavity 202 for the first thin film dielectric layer 102, and the coverage of the oxide layer on the inner walls of the cavity 202 may not be complete or uniform for PECVD or PVD, for example.
With the second thin film hydrophobic layer 103, it may also occur that the coverage on the inner walls of the cavity 202 may not be complete or uniform, due to differences in equipment process capability, using sputtering or a L D processes.
However, even if incomplete film coverage on the inner walls of the cavity 202 occurs as described above, it is essential that the second thin film hydrophobic layer 103 is not completely covered, because the first thin film dielectric layer 102 can achieve the desired coverage on the inner walls of the cavity 202 by furnace thermal oxidation or ISSG, and the worst case is that the back surface of the movable assembly 101 is not covered by the hydrophobic layer 103, as shown in fig. 12, two sets of adjacent comb tooth structures 105 are shown in fig. 12, one set on the left is completely covered by the double-layer dielectric layer, and one set on the right is not completely covered by the hydrophobic layer 103 on one side of the comb tooth structure 105. Even so, the technical effect of the present invention is not affected, as shown in fig. 1 and 12, the adhesion between comb teeth occurs on the side surface 106 of the comb tooth structure 105, and the front surface 107 (or the back surface 108) of the adjacent comb tooth structure 105 does not directly contact, so that the technical effect of the present invention is not affected even if the back surface 108 of the comb tooth structure 105 is not covered with the hydrophobic layer 103, i.e., the short circuit prevention and adhesion prevention between comb teeth can be still achieved, and the thermal stability is better than that of the prior art. Therefore, the realization of the invention is simple and easy to realize for the existing semiconductor processing technology.
The foregoing detailed description of the preferred embodiments of the invention has been presented. It should be understood that numerous modifications and variations could be devised by those skilled in the art in light of the present teachings without departing from the inventive concepts. Therefore, the technical solutions available to those skilled in the art through logic analysis, reasoning and limited experiments based on the prior art according to the concept of the present invention should be within the scope of protection defined by the claims.

Claims (10)

1. A MEMS device comprises a movable component, and is characterized in that a dielectric layer and a hydrophobic layer are sequentially arranged on the surface of the movable component.
2. The MEMS device of claim 1, wherein the dielectric layer is silicon oxide.
3. The MEMS device of claim 1, wherein the dielectric layer is SiOx, where x is 0.1-2.
4. The MEMS device of claim 1, wherein the dielectric layer has a thickness in a range of 1 to 10000 angstroms.
5. The MEMS device of claim 1, wherein the hydrophobic layer is a metal oxide or a metal nitride.
6. The MEMS device of claim 1, wherein the hydrophobic layer is HfOx, where x is 0.1-2.
7. The MEMS device of claim 1, wherein the hydrophobic layer has a thickness in a range of 1 to 10000 angstroms.
8. A method of fabricating a MEMS device, comprising:
forming a movable structural layer, wherein the movable structural layer comprises movable components;
depositing a dielectric layer;
depositing a hydrophobic layer.
9. The process of claim 8, wherein a first wafer is provided, and the movable structural layer is configured to be coupled to the first wafer.
10. The process of claim 9, wherein the first wafer is a cap wafer or an interconnect wafer of the MEMS device.
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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100110518A1 (en) * 2008-10-27 2010-05-06 Pixtronix, Inc. Mems anchors
CN102074574A (en) * 2009-11-19 2011-05-25 中国科学院微电子研究所 Method for forming stack gate of CMOS (Complementary Metal-Oxide-Semiconductor) device and stack gate sturcture
US20120009713A1 (en) * 2009-03-30 2012-01-12 Commissariat A L'energie Atomique Et Aux Ene Alt Making of a microelectronic device including a monocrystalline silicon nems component and a transistor the gate of which is made in the same layer as the mobile structure of this component
CN103575260A (en) * 2012-07-19 2014-02-12 水木智芯科技（北京）有限公司 Micro gyroscope and processing manufacturing method thereof
CN104871066A (en) * 2012-12-19 2015-08-26 皮克斯特隆尼斯有限公司 Display device incorporating multiple dielectric
CN105800543A (en) * 2015-01-16 2016-07-27 台湾积体电路制造股份有限公司 Substrate structure, semiconductor structure and method for fabricating the same
CN106115602A (en) * 2016-07-01 2016-11-16 杭州士兰集成电路有限公司 MEMS and manufacture method thereof
CN106365104A (en) * 2016-09-23 2017-02-01 杭州士兰集成电路有限公司 MEMS device manufacturing method and MEMS device
US20180186625A1 (en) * 2016-12-30 2018-07-05 Texas Instruments Incorporated Dielectric cladding of microelectromechanical systems (mems) elements for improved reliability

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100110518A1 (en) * 2008-10-27 2010-05-06 Pixtronix, Inc. Mems anchors
US20120009713A1 (en) * 2009-03-30 2012-01-12 Commissariat A L'energie Atomique Et Aux Ene Alt Making of a microelectronic device including a monocrystalline silicon nems component and a transistor the gate of which is made in the same layer as the mobile structure of this component
CN102074574A (en) * 2009-11-19 2011-05-25 中国科学院微电子研究所 Method for forming stack gate of CMOS (Complementary Metal-Oxide-Semiconductor) device and stack gate sturcture
CN103575260A (en) * 2012-07-19 2014-02-12 水木智芯科技（北京）有限公司 Micro gyroscope and processing manufacturing method thereof
CN104871066A (en) * 2012-12-19 2015-08-26 皮克斯特隆尼斯有限公司 Display device incorporating multiple dielectric
CN105800543A (en) * 2015-01-16 2016-07-27 台湾积体电路制造股份有限公司 Substrate structure, semiconductor structure and method for fabricating the same
CN106115602A (en) * 2016-07-01 2016-11-16 杭州士兰集成电路有限公司 MEMS and manufacture method thereof
CN106365104A (en) * 2016-09-23 2017-02-01 杭州士兰集成电路有限公司 MEMS device manufacturing method and MEMS device
US20180186625A1 (en) * 2016-12-30 2018-07-05 Texas Instruments Incorporated Dielectric cladding of microelectromechanical systems (mems) elements for improved reliability

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