CN106115602A - MEMS and manufacture method thereof - Google Patents
MEMS and manufacture method thereof Download PDFInfo
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- CN106115602A CN106115602A CN201610526397.7A CN201610526397A CN106115602A CN 106115602 A CN106115602 A CN 106115602A CN 201610526397 A CN201610526397 A CN 201610526397A CN 106115602 A CN106115602 A CN 106115602A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
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Abstract
Disclose a kind of MEMS to include: substrate, there is the first cavity；First sacrifice layer, is positioned in substrate, has the second cavity；Vibration diaphragm layer, at least some of of vibration diaphragm layer is supported by the first sacrifice layer, and vibration diaphragm layer includes being positioned at the vibration diaphragm above the second cavity, and vibration diaphragm has the bump prominent to the second cavity towards the surface of the second cavity；Second sacrifice layer, is positioned on vibration diaphragm, has the 3rd cavity, remaining at least partially within the 3rd cavity of vibration diaphragm；Backplane flaggy, is positioned on the second sacrifice layer, and at least some of of backplane flaggy is supported by the second sacrifice layer, and backplane flaggy includes being positioned at the back pole plate above the 3rd cavity；Anti adhering layer, on all exposed surfaces between substrate and vibration diaphragm layer, between backplane flaggy and vibration diaphragm.The present invention can reduce the contact area between vibration diaphragm and substrate, and due to the hydrophobicity of anti adhering layer and low surface adhesion, can efficiently reduce or prevent the adhesion between substrate and vibration diaphragm layer, between backplane flaggy and vibration diaphragm.
Description
Technical field
The invention belongs to MEMS technology field, more particularly, to one utilize sacrifice layer formed anti-adhesion bump and
Between moving-mass block layer and polycrystalline buried regions or substrate formed alchlor anti adhering layer dual anti-adhesion MEMS and
Its manufacture method.
Background technology
MEMS technology is described as 21 century with revolutionary new and high technology, and its development starts from the sixties in 20th century, MEMS
Be the abbreviation of English Micro Electro Mechanical systems, i.e. microelectromechanical systems, is microelectronics and microcomputer
The ingenious combination of tool.In the MEMS process technology based on silicon, portioned product such as capacitance-type micro silicon microphone, such is produced
The research progress of existing more than 20 year of product, the method implemented has multiple, primary structure such as silicon substrate, cavity, sacrifice
Oxide layer, vibration diaphragm, insulating oxide, polycrystalline back pole plate etc., but micro-silicon microphone device microstructure manufacture and should
During with, when the superficial attractive forces between vibration diaphragm and silicon substrate is more than the elastic restoring force of micro structure, adjacent is micro-
To stick together between type structure (substrate, vibration diaphragm, back pole plate etc.), thus cause component failure, make decrease in yield, viscous
Even become and micromachined and application process have produced the main cause that finished product is scrapped, seriously constrained capacitance type micro-silicon Mike
Wind development and commercial application, in view of this, it is necessary to structure and manufacture method to existing capacitance-type micro silicon microphone are given
To improve to solve the problems referred to above.
Summary of the invention
It is an object of the invention to provide a kind of MEMS and manufacture method thereof.
According to an aspect of the present invention, it is provided that a kind of MEMS includes: substrate, described substrate has the first cavity；The
One sacrifice layer, is positioned in described substrate, has the second cavity in described first sacrifice layer；Vibration diaphragm layer, described vibration diaphragm
At least some of of layer is supported by described first sacrifice layer, and described vibration diaphragm layer includes being positioned at shaking above described second cavity
Dynamic barrier film, described vibration diaphragm has the bump prominent to described second cavity towards the surface of described second cavity；Second is sacrificial
Domestic animal layer, is positioned on described vibration diaphragm, has the 3rd cavity in described second sacrifice layer, described vibration diaphragm at least some of
It is positioned at described 3rd cavity；Backplane flaggy, is positioned on described second sacrifice layer, described backplane flaggy at least some of by institute
Stating the second sacrifice layer to support, described backplane flaggy includes being positioned at the back pole plate above described 3rd cavity；Wherein, described MEMS device
Part also includes: anti adhering layer, the institute between described substrate and described vibration diaphragm layer, between backplane flaggy and vibration diaphragm
Have on exposed surface.
Preferably, the material of described first sacrifice layer and described second sacrifice layer is silicon oxide.
Preferably, described substrate is Semiconductor substrate, and described first sacrifice layer is positioned in described Semiconductor substrate.
Preferably, described bump be shaped as V-arrangement, inverted trapezoidal or circular arc, described bump from described vibration diaphragm towards
The height that the surface of described second cavity highlights is that 0.5 μm is to 0.8 μm.
Preferably, described MEMS also includes: the 3rd sacrifice layer, is positioned on described backplane flaggy；Metal level, is positioned at institute
Stating on the 3rd sacrifice layer, described metal level includes lead-in wire.
Preferably, having through hole in described 3rd sacrifice layer, described metal level is via described through hole and described vibration diaphragm
Layer, described backplane flaggy connect.
Preferably, the material of described vibration diaphragm layer and/or described backplane flaggy is polysilicon.
Preferably, on the surface that described anti adhering layer is also located on described backplane flaggy and/or described MEMS is exposed.
Preferably, the material of described anti adhering layer is alchlor.
According to a further aspect in the invention, it is provided that the manufacture method of a kind of MEMS, including: offer substrate, described
The first sacrifice layer is formed in substrate；Perform etching to form pit to the upper surface of described first sacrifice layer；Described first sacrificial
The upper surface of domestic animal layer forms the vibration diaphragm layer including release aperture, and described vibration diaphragm layer fills described pit；Formed and cover institute
State the second sacrifice layer of vibration diaphragm layer；Upper surface at described second sacrifice layer forms the backplane flaggy including release aperture；?
The back side of substrate forms deep trouth, and corrodes described substrate to form first in described substrate empty by described deep trouth
Chamber；Sacrificial to described first sacrifice layer and second by the release aperture of described vibration diaphragm layer and the release aperture of described backplane flaggy
Domestic animal layer carries out corroding to form the second cavity in the first sacrifice layer, to form the 3rd cavity in the second sacrifice layer, is filled in institute
State the vibration diaphragm layer in pit prominent to described second cavity；Between described substrate and described vibration diaphragm layer, back pole plate
Anti adhering layer is formed on all exposed surfaces between layer and vibration diaphragm.
Preferably, the material of described first sacrifice layer and described second sacrifice layer is silicon oxide.
Preferably, described substrate is Semiconductor substrate, and described first sacrifice layer is positioned in described Semiconductor substrate.
Preferably, described pit be shaped as V-arrangement, inverted trapezoidal or circular arc, the degree of depth is that 0.5 μm is to 0.8 μm.
Preferably, described manufacture method also includes: form the 3rd sacrifice layer on described backplane flaggy；Described 3rd sacrificial
Form metal level on domestic animal layer, and described metallic layer graphic is formed lead-in wire.
Preferably, described manufacture method also includes: forming through hole on described 3rd sacrifice layer, described metal level is via institute
State through hole to be connected with described vibration diaphragm layer, described backplane flaggy.
Preferably, the material of described vibration diaphragm layer and/or described backplane flaggy is polysilicon.
Preferably, described manufacture method also includes: on described backplane flaggy and/or the exposed surface of described MEMS
The described anti adhering layer of upper formation.
Preferably, the material of described anti adhering layer is alchlor.
Preferably, the mode using HF acid stifling carries out gaseous corrosion to described first sacrifice layer or the second sacrifice layer.
In the MEMS of the embodiment of the present invention, vibration diaphragm has bump on the surface of cavity downward, and this is dashed forward
Point can reduce the contact area of vibration diaphragm and substrate effectively, thus reduce or prevent adhesion, it is to avoid component failure；Vibration
Alchlor anti adhering layer is formed on all exposed surface between barrier film and substrate, between backplane flaggy and vibration diaphragm,
Due to hydrophobicity and the low surface adhesion of alchlor, both played the purpose of dual anti-adhesion, the most do not affected device performance.
Additionally, in the manufacture method of the MEMS of the embodiment of the present invention, the upper surface at the first sacrifice layer forms pit,
And vibration diaphragm layer is formed on the first sacrifice layer and fills pit, after sacrifice layer part is removed, it is filled in pit
Vibration diaphragm layer forms bump, reduces the contact area of moving-mass block and substrate, such that it is able to reduce or prevent adhesion, keeps away
Exempt from component failure；Formed on all exposed surface between vibration diaphragm and substrate, between backplane flaggy and vibration diaphragm
Alchlor anti adhering layer, due to hydrophobicity and the low surface adhesion of alchlor, had both played the purpose of dual anti-adhesion, again
Do not affect device performance.
Accompanying drawing explanation
By description to the embodiment of the present invention referring to the drawings, above-mentioned and other purposes of the present invention, feature and
Advantage will be apparent from, in the accompanying drawings:
Fig. 1 is the schematic flow sheet of the manufacture method of MEMS according to embodiments of the present invention；
Fig. 2 to Figure 12 be MEMS according to embodiments of the present invention manufacture method in device corresponding to each step cut open
Face schematic diagram.
Detailed description of the invention
It is more fully described various embodiments of the present invention hereinafter with reference to accompanying drawing.In various figures, identical element
Same or similar reference is used to represent.For the sake of clarity, the various piece in accompanying drawing is not necessarily to scale.
The present invention can present in a variety of manners, some of them example explained below.
Fig. 1 is the schematic flow sheet of the manufacture method of MEMS according to embodiments of the present invention.As it is shown in figure 1, according to
The manufacture method of the MEMS of the present embodiment may include steps of.
In step S101, it is provided that substrate, form the first sacrifice layer on the substrate.
In step s 102, perform etching to form pit to the upper surface of described first sacrifice layer.
In step s 103, the upper surface at described first sacrifice layer forms the vibration diaphragm layer including release aperture, described
Vibration diaphragm layer fills described pit.
In step S104, form the second sacrifice layer covering described vibration diaphragm layer.
In step S105, the upper surface at described second sacrifice layer forms the backplane flaggy including release aperture.
In step s 106, form deep trouth at the back side of substrate, and by described deep trouth described substrate corroded with
The first cavity is formed in described substrate.
In step s 107, by the release aperture of described vibration diaphragm layer and the release aperture of described backplane flaggy to described
First sacrifice layer and the second sacrifice layer carry out corroding to form the second cavity in the first sacrifice layer, formed in the second sacrifice layer
3rd cavity, the vibration diaphragm layer being filled in described pit is prominent to described second cavity.
In step S108, the exposed surface between described substrate and described vibration diaphragm layer forms anti adhering layer.
It is described in detail referring to Fig. 2 to Figure 12.
As in figure 2 it is shown, first provide substrate 10, in described substrate 10, then form the first sacrifice layer 102.As one
Preferably example, this substrate 10 can be Semiconductor substrate 101.More specifically, Semiconductor substrate 101 can be conventional half
Silicon substrate in semiconductor process, can be such as crystal orientation be the N-type silicon substrate of<100>.The material of the first sacrifice layer 102 can be
Insulant in conventional semiconductor process, such as silicon oxide.It is, for example possible to use thermal oxide, low-pressure chemical vapor phase deposition
Or the method such as plasma enhanced chemical vapor deposition (PECVD) forms silicon oxide material in Semiconductor substrate 101 (LPVCD)
First sacrifice layer 102 of matter.The typical thickness of the first sacrifice layer 102 can be that 1 μm is to 2 μm.
As it is shown on figure 3, perform etching to form pit 103 to the upper surface of described first sacrifice layer 102.Further and
Speech, can use the photoetching process in conventional semiconductor process, and the upper surface at the first sacrifice layer 102 forms the figure of pit 103
Shape window, then forms pit 103 by the method such as dry etching or wet etching.The degree of depth of pit 103 is and is subsequently formed
The height of bump, it is preferable that the degree of depth of pit 103 is that 0.5 μm is to 0.8 μm.The flat shape of pit 103 and size can roots
It is set according to being actually needed, such as V-arrangement, inverted trapezoidal, circular arc etc..Preferably, the size of the graphical window of pit 103 is 1 μ
M to 2 μm.As a nonrestrictive example, the flat shape of pit A can be the V-arrangement of 1 μm * 0.6 μm.
As shown in Figure 4, the upper surface at described first sacrifice layer 102 forms the vibration diaphragm layer 104 including release aperture, institute
State vibration diaphragm layer and fill described pit 103.The material of this vibration diaphragm layer 104 can be such as the polycrystalline of polysilicon or doping
Silicon, but it is not limited to this.
Furthermore, it is possible to use the method for low-pressure chemical vapor phase deposition (LPVCD), the first sacrifice layer 102 forms sediment
The polysilicon of long-pending doping, and graphical to it, and temperature during deposit can be 570 DEG C to 630 DEG C, the polycrystal layer that deposit is formed
Thickness can be that 0.4 μm is to 1.0 μm.Then, photoetching and etching technics by semiconductor industry are formed including release aperture
Graphical, thus form vibration diaphragm layer 104.In the bottom of vibration diaphragm layer 104, vibration diaphragm layer 104 also fills up pit
103.Wherein, the part being filled in pit 103 forms follow-up bump, and be possible to prevent between vibration diaphragm layer and substrate is viscous
Even.
As it is shown in figure 5, form the second sacrifice layer 105 covering described vibration diaphragm layer 104.Described second sacrifice layer 105
Material can be oxidation material, preferably silicon oxide.For example, it is possible to by low-pressure chemical vapor phase deposition (LPVCD) or etc. from
The method of sub-enhanced chemical vapor deposition (PECVD) forms the second sacrifice layer 105 of silicon oxide material, and its thickness is the most permissible
It is that 2.0 μm are to 4.0 μm.
As shown in Figure 6, the upper surface at described second sacrifice layer 105 forms the backplane flaggy 106 including release aperture.This back of the body
The material of pole plate layer 106 can be such as the polysilicon of polysilicon or doping, but is not limited to this.
Furthermore, it is possible to use the method for low-pressure chemical vapor phase deposition (LPVCD), the second sacrifice layer 105 forms sediment
The polysilicon of long-pending doping, and graphical to it.Temperature during deposit can be 570 DEG C to 630 DEG C, the polycrystal layer that deposit is formed
Thickness can be that 1.0 μm are to 2.0 μm.Then, photoetching and etching technics by semiconductor industry are formed including release aperture
Graphical, thus form backplane flaggy 106.
As it is shown in fig. 7, form the 3rd sacrifice layer 107 on described backplane flaggy 106.The material of described 3rd sacrifice layer 107
Material can be oxidation material, preferably silicon oxide.For example, it is possible to increased by low-pressure chemical vapor phase deposition (LPVCD) or plasma
The method of strong type chemical vapor deposition (PECVD) forms the 3rd sacrifice layer 107 of silicon oxide material, and its thickness can be generally
0.3 μm is to 0.5 μm.
As shown in Figure 8, perform etching at described 3rd sacrifice layer 107, to form through hole 108a and 108b, through hole 108a's
Vibration diaphragm layer 104 is exposed in bottom, and backplane flaggy 106 is exposed in the bottom of through hole 108b.Furthermore, conventional half can be used
The photoetching process of conductor, forms window and the window of through hole 108b of through hole 108a, afterwards by dry at the 3rd sacrifice layer 107
The methods such as method etching or wet etching form through hole 108a and 108b.The degree of depth of through hole 108a makes through hole 108a bottom-exposed go out
Vibration diaphragm layer 104, the degree of depth of through hole 108b makes through hole 108b bottom-exposed go out backplane flaggy 106.Through hole 108a can be used as
The fairlead that subsequent metal layer is connected with vibration diaphragm layer 104, through hole 108b can be used as subsequent metal layer and backplane flaggy 106
The fairlead being connected.
As it is shown in figure 9, on described 3rd sacrifice layer 107, form metal level 109, and graphical to described metal level 109
Form lead-in wire.Furthermore, the sputtering in conventional semiconductor process or evaporation technology can be used, at the 3rd sacrifice layer 107
Upper deposition metal level 106, its thickness can be 1 μm～2 μm, its material can be fine aluminium (Al), aluminum silicon (Al-Si1%) or
Ti+TiN+Al-Si.Afterwards, metal level 106 is patterned by photoetching and etching technics by semiconductor industry, thus shape
Become one or more lead-in wire.
As shown in Figure 10, form deep trouth at the back side of substrate 10, and by described deep trouth, described substrate 10 is corroded
To form the first cavity 110 in described substrate.Furthermore, by conventional semiconductor photoetching technological method, in substrate 10
The back side forms cavity pattern, by special deep etching machine, typically can select the AMS200 deep trouth of Alcatel company of the U.S.
The etching apparatus such as etching machine, utilize MEMS industry routine Bosch technique, etch cavity deep trouth.
As shown in figure 11, in the way of can fumigating mutually to use HF acid gas, by described first cavity 110 and vibration diaphragm layer
Described first sacrifice layer 102 is corroded with the first sacrifice layer 102 below described vibration diaphragm 104 by the release aperture of 104
Middle formation the second cavity, the vibration diaphragm layer 104 being filled in described pit 103 is prominent to described second cavity；By described
Described second sacrifice layer 105 is corroded with second below described backplane flaggy 106 sacrificial by the release aperture of backplane flaggy 106
Domestic animal layer 105 is formed the 3rd cavity.Furthermore, for the first sacrifice layer 102 of silicon oxide material, HF acid gas can be used
Mode stifling mutually, removes the part corrosion of the first sacrifice layer 102 between vibration diaphragm layer 104 and substrate 10 so that
Vibration diaphragm layer 104 is released, and obtains movable vibration diaphragm.Vibration diaphragm after release, when motion, at least partly can
Enter the second cavity in the first sacrifice layer 102.For the second sacrifice layer 105 of silicon oxide material, HF acid gas phase can be used
Stifling mode, removes the part corrosion of the second sacrifice layer 105 between backplane flaggy 106 and vibration diaphragm layer 104, shape
Become the 3rd cavity.
After the first sacrifice layer 102 is partially removed, the vibration diaphragm layer 104 being positioned at pit 103 comes out, and is formed
Bump 104a.This bump 104a can reduce the contact area between vibration diaphragm and substrate 10 or with the first sacrifice layer
Contact area between 102, so, even if coming in contact, owing to elastic restoring force is much larger than the superficial attractive forces of bump 104a,
Therefore can't stick together.
As shown in figure 12, on the exposed surface between described substrate 10 and described vibration diaphragm layer 104, backplane flaggy
106 and described MEMS on form anti adhering layer on other exposed surfaces.The material of described anti adhering layer is three oxidations
Aluminum.
Furthermore, utilize atomic layer deposition (ALD) equipment, by trimethyl aluminium and water as deposit source, control anti-
Answering room temperature in the range of 100 DEG C～400 DEG C, pressure is in several millibars, at described substrate 10 and described vibration diaphragm layer
Alchlor is deposited on other exposed surfaces on exposed surface between 104, in backplane flaggy 106 and described MEMS
Layer 111, its thickness can be 2nm～10nm.The hydrophobicity of alchlor and low surface adhesion, both played dual anti-adhesion
Purpose, does not the most affect device performance.
In the MEMS of the embodiment of the present invention, vibration diaphragm has bump on the surface of cavity downward, and this is dashed forward
Point can reduce the contact area of vibration diaphragm and substrate effectively, thus reduce or prevent adhesion, it is to avoid component failure；Vibration
Alchlor anti adhering layer is formed on all exposed surface between barrier film and substrate, between backplane flaggy and vibration diaphragm,
Due to hydrophobicity and the low surface adhesion of alchlor, both played the purpose of dual anti-adhesion, the most do not affected device performance.
Additionally, in the manufacture method of the MEMS of the embodiment of the present invention, the upper surface at the first sacrifice layer forms pit,
And vibration diaphragm layer is formed on the first sacrifice layer and fills pit, after sacrifice layer part is removed, it is filled in pit
Vibration diaphragm layer forms bump, reduces the contact area of moving-mass block and substrate, such that it is able to reduce or prevent adhesion, keeps away
Exempt from component failure；Formed on all exposed surface between vibration diaphragm and substrate, between backplane flaggy and vibration diaphragm
Alchlor anti adhering layer, due to hydrophobicity and the low surface adhesion of alchlor, had both played the purpose of dual anti-adhesion, again
Do not affect device performance.
According to embodiments of the invention as described above, these embodiments do not have all of details of detailed descriptionthe, the most not
Limit the specific embodiment that this invention is only described.Obviously, as described above, can make many modifications and variations.This explanation
These embodiments are chosen and specifically described to book, is to preferably explain the principle of the present invention and actual application, so that affiliated
Technical field technical staff can utilize the present invention and amendment on the basis of the present invention to use well.The protection model of the present invention
Enclose and should be defined in the range of standard with the claims in the present invention.
Claims (19)
1. a MEMS, it is characterised in that including:
Substrate, described substrate has the first cavity；
First sacrifice layer, is positioned in described substrate, has the second cavity in described first sacrifice layer；
Vibration diaphragm layer, at least some of of described vibration diaphragm layer is supported by described first sacrifice layer, described vibration diaphragm layer
Including the vibration diaphragm being positioned at above described second cavity, described vibration diaphragm has to institute towards the surface of described second cavity
State the bump that the second cavity is prominent；
Second sacrifice layer, is positioned on described vibration diaphragm layer, has the 3rd cavity, described vibration diaphragm in described second sacrifice layer
Remain at least partially within described 3rd cavity；
Backplane flaggy, is positioned on described second sacrifice layer, and at least some of of described backplane flaggy is propped up by described second sacrifice layer
Support, described backplane flaggy includes being positioned at the back pole plate above described 3rd cavity；
Wherein, described MEMS also includes:
Anti adhering layer, all naked between described substrate and described vibration diaphragm layer, between backplane flaggy and vibration diaphragm
On dew surface.
MEMS the most according to claim 1, it is characterised in that described first sacrifice layer and described second sacrifice layer
Material be silicon oxide.
MEMS the most according to claim 1, it is characterised in that described substrate is Semiconductor substrate, described first sacrificial
Domestic animal layer is positioned in described Semiconductor substrate.
MEMS the most according to claim 1, it is characterised in that described bump be shaped as V-arrangement, inverted trapezoidal or circular arc
Shape, the height that described bump is prominent towards the surface of described second cavity from described vibration diaphragm is that 0.5 μm is to 0.8 μm.
MEMS the most according to claim 1, it is characterised in that also include: the 3rd sacrifice layer, is positioned at described back pole plate
On layer；
Metal level, is positioned on described 3rd sacrifice layer, and described metal level includes lead-in wire.
MEMS the most according to claim 5, it is characterised in that there is in described 3rd sacrifice layer through hole, described gold
Belong to layer to be connected with described vibration diaphragm layer, described backplane flaggy via described through hole.
MEMS the most according to claim 1, it is characterised in that described vibration diaphragm layer and/or described backplane flaggy
Material be polysilicon.
MEMS the most according to claim 1, it is characterised in that described anti adhering layer is also located on described backplane flaggy
And/or on the exposed surface of described MEMS.
MEMS the most according to claim 1, it is characterised in that the material of described anti adhering layer is alchlor.
10. the manufacture method of a MEMS, it is characterised in that including:
Substrate is provided, forms the first sacrifice layer on the substrate；
Perform etching to form pit to the upper surface of described first sacrifice layer；
Upper surface at described first sacrifice layer forms the vibration diaphragm layer including release aperture, and described vibration diaphragm layer is filled described
Pit；
Form the second sacrifice layer covering described vibration diaphragm layer；
Upper surface at described second sacrifice layer forms the backplane flaggy including release aperture；
Form deep trouth at the back side of substrate, and described substrate corroded with formation in described substrate the by described deep trouth
One cavity；
By the release aperture of described vibration diaphragm layer and the release aperture of described backplane flaggy to described first sacrifice layer and second
Sacrifice layer carries out corroding to form the second cavity in the first sacrifice layer, to form the 3rd cavity in the second sacrifice layer, is filled in
Vibration diaphragm layer in described pit is prominent to described second cavity；
Formed on all exposed surfaces between described substrate and described vibration diaphragm layer, between backplane flaggy and vibration diaphragm
Anti adhering layer.
11. according to claim 10Described manufacture method, it is characterised in that described first sacrifice layer and described second
The material of sacrifice layer is silicon oxide.
12. manufacture methods according to claim 11, it is characterised in that described substrate is Semiconductor substrate, described first
Sacrifice layer is positioned in described Semiconductor substrate.
13. manufacture methods according to claim 11, it is characterised in that described pit be shaped as V-arrangement, inverted trapezoidal or circle
Arc, the degree of depth is that 0.5 μm is to 0.8 μm.
14. manufacture methods according to claim 10, it is characterised in that also include:
Described backplane flaggy is formed the 3rd sacrifice layer；
Described 3rd sacrifice layer is formed metal level, and described metallic layer graphic is formed lead-in wire.
15. manufacture methods according to claim 14, it is characterised in that also include:
Forming through hole on described 3rd sacrifice layer, described metal level is via described through hole and described vibration diaphragm layer, the described back of the body
Pole plate layer connects.
16. manufacture methods according to claim 10, it is characterised in that described vibration diaphragm layer and/or described back pole plate
The material of layer is polysilicon.
17. manufacture methods according to claim 10, it is characterised in that also include:
Described anti adhering layer is formed on described backplane flaggy and/or on the exposed surface of described MEMS.
18. manufacture methods according to claim 10, it is characterised in that the material of described anti adhering layer is alchlor.
19. manufacture methods according to claim 10, it is characterised in that use the stifling mode of HF acid to described first sacrificial
Domestic animal layer or the second sacrifice layer carry out gaseous corrosion.
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| CN108622849A (en) * | 2017-03-17 | 2018-10-09 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and its manufacturing method |
| CN110574396A (en) * | 2018-12-29 | 2019-12-13 | 共达电声股份有限公司 | MEMS sound sensor, MEMS microphone and electronic equipment |
| CN110603819A (en) * | 2018-12-29 | 2019-12-20 | 共达电声股份有限公司 | MEMS sound sensor, MEMS microphone and electronic equipment |
| CN111498793A (en) * | 2020-05-01 | 2020-08-07 | 深迪半导体(上海)有限公司 | MEMS device and processing method thereof |
| CN112079326A (en) * | 2019-06-12 | 2020-12-15 | 芯恩（青岛）集成电路有限公司 | MEMS device structure and preparation method thereof |
| CN112408312A (en) * | 2021-01-20 | 2021-02-26 | 中芯集成电路制造(绍兴)有限公司 | MEMS device manufacturing method and MEMS device |
| CN113104806A (en) * | 2021-03-11 | 2021-07-13 | 中国电子科技集团公司第五十四研究所 | Preparation method of composite metal sacrificial layer of MEMS device |
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| CN118458683A (en) * | 2024-07-09 | 2024-08-09 | 芯联集成电路制造股份有限公司 | MEMS device, mask plate and preparation method of MEMS device |
| CN118458683B (en) * | 2024-07-09 | 2024-09-20 | 芯联集成电路制造股份有限公司 | MEMS device, mask plate and preparation method of MEMS device |
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