CN106115602B - MEMS and its manufacture method - Google Patents
MEMS and its manufacture method Download PDFInfo
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- CN106115602B CN106115602B CN201610526397.7A CN201610526397A CN106115602B CN 106115602 B CN106115602 B CN 106115602B CN 201610526397 A CN201610526397 A CN 201610526397A CN 106115602 B CN106115602 B CN 106115602B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
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Abstract
Disclosing a kind of MEMS includes：Substrate, with the first cavity；First sacrifice layer, in substrate, with the second cavity；Vibration diaphragm layer, at least a portion of vibration diaphragm layer is supported by the first sacrifice layer, and vibration diaphragm layer includes being located at the vibration diaphragm above the second cavity, and vibration diaphragm has the bump prominent to the second cavity towards the surface of the second cavity；Second sacrifice layer, on vibration diaphragm, with the 3rd cavity, at least a portion of vibration diaphragm is located in the 3rd cavity；Backplane flaggy, on the second sacrifice layer, at least a portion of backplane flaggy is supported by the second sacrifice layer, and backplane flaggy includes being located at the back pole plate above the 3rd cavity；Anti adhering layer, between substrate and vibration diaphragm layer, on all exposed surfaces between backplane flaggy and vibration diaphragm.The present invention can reduce the contact area between vibration diaphragm and substrate, and hydrophobicity and low surface adhesion due to anti adhering layer, can efficiently reduce or prevent between substrate and vibration diaphragm layer, the adhesion between backplane flaggy and vibration diaphragm.
Description
Technical field
The invention belongs to MEMS technology field, more particularly, to one kind using sacrifice layer formed anti-adhesion bump and
Exercise quality block layer and polycrystalline buried regions or substrate between formed alchlor anti adhering layer it is dual it is anti-adhesion MEMS and
Its manufacture method.
Background technology
MEMS technology is described as 21 century with revolutionary new and high technology, and its development is started from the 1960s, MEMS
It is English Micro Electro Mechanical systems abbreviation, i.e. microelectromechanical systems, is microelectronics and microcomputer
The ingenious combination of tool.In the MEMS process technologies based on silicon, portioned product such as capacitance-type micro silicon microphone, to such production
The research of product has the progress of more than 20 years, and the method implemented has a variety of, primary structure such as silicon substrate, cavity, sacrifice
Oxide layer, vibration diaphragm, insulating oxide, polycrystalline back pole plate etc., but manufacture and answer in the microstructure of micro- silicon microphone device
During, when the superficial attractive forces between vibration diaphragm and silicon substrate are more than the elastic restoring force of micro-structural, adjacent is micro-
It will be sticked together between type structure (substrate, vibration diaphragm, back pole plate etc.), and so as to cause component failure, make decrease in yield, glued
Even turn into micromachined and application process and produced the main cause that finished product is scrapped, seriously constrained capacitance type micro-silicon Mike
Wind develops and commercial application, in view of this, it is necessary to which structure and manufacture method to existing capacitance-type micro silicon microphone are given
Solved the above problems with improving.
The content of the invention
It is an object of the invention to provide a kind of MEMS and its manufacture method.
Include according to an aspect of the present invention there is provided a kind of MEMS：Substrate, the substrate has the first cavity；The
One sacrifice layer, in the substrate, has the second cavity in first sacrifice layer；Vibration diaphragm layer, the vibration diaphragm
At least a portion of layer is supported by first sacrifice layer, and the vibration diaphragm layer includes being located at shaking above second cavity
Dynamic barrier film, the vibration diaphragm has the bump prominent to second cavity towards the surface of second cavity；Second is sacrificial
Domestic animal layer, on the vibration diaphragm, has the 3rd cavity, at least a portion of the vibration diaphragm in second sacrifice layer
In the 3rd cavity；Backplane flaggy, on second sacrifice layer, at least a portion of the backplane flaggy is by institute
The support of the second sacrifice layer is stated, the backplane flaggy includes being located at the back pole plate above the 3rd cavity；Wherein, the MEMS devices
Part also includes：Anti adhering layer, between the substrate and vibration diaphragm layer, the institute between backplane flaggy and vibration diaphragm
Have on exposed surface.
Preferably, the material of first sacrifice layer and second sacrifice layer is silica.
Preferably, the substrate is Semiconductor substrate, and first sacrifice layer is located in the Semiconductor substrate.
Preferably, the bump is shaped as V-arrangement, inverted trapezoidal or circular arc, and the bump is from the vibration diaphragm direction
The height that the surface of second cavity is protruded is 0.5 μm to 0.8 μm.
Preferably, the MEMS also includes：3rd sacrifice layer, on the backplane flaggy；Metal level, positioned at institute
State in 3rd sacrifice layer, the metal level includes lead.
Preferably, there is through hole, the metal level is via the through hole and the vibration diaphragm in the 3rd sacrifice layer
Layer, backplane flaggy connection.
Preferably, the material of the vibration diaphragm layer and/or the backplane flaggy is polysilicon.
Preferably, the anti adhering layer is also located on the backplane flaggy and/or on the exposed surface of the MEMS.
Preferably, the material of the anti adhering layer is alchlor.
According to another aspect of the present invention there is provided a kind of manufacture method of MEMS, including：Substrate is provided, described
The first sacrifice layer is formed in substrate；The upper surface of first sacrifice layer is performed etching to form pit；It is sacrificial described first
The upper surface of domestic animal layer, which is formed, includes the vibration diaphragm layer of release aperture, the vibration diaphragm layer filling pit；Form covering institute
State the second sacrifice layer of vibration diaphragm layer；Being formed in the upper surface of second sacrifice layer includes the backplane flaggy of release aperture；
The back side of substrate forms deep trouth, and is corroded empty to form first in the substrate to the substrate by the deep trouth
Chamber；It is sacrificial to first sacrifice layer and second by the release aperture of vibration diaphragm layer and the release aperture of the backplane flaggy
Domestic animal layer is corroded to form the second cavity in the first sacrifice layer, the 3rd cavity is formed in the second sacrifice layer, is filled in institute
The vibration diaphragm layer stated in pit is prominent to second cavity；Between the substrate and vibration diaphragm layer, back pole plate
Anti adhering layer is formed on all exposed surfaces between layer and vibration diaphragm.
Preferably, the material of first sacrifice layer and second sacrifice layer is silica.
Preferably, the substrate is Semiconductor substrate, and first sacrifice layer is located in the Semiconductor substrate.
Preferably, the pit is shaped as V-arrangement, inverted trapezoidal or circular arc, and depth is 0.5 μm to 0.8 μm.
Preferably, the manufacture method also includes：3rd sacrifice layer is formed on the backplane flaggy；It is sacrificial the described 3rd
Metal level is formed on domestic animal layer, and to metallic layer graphic formation lead.
Preferably, the manufacture method also includes：Through hole is formed in the 3rd sacrifice layer, the metal level is via institute
Through hole is stated to be connected with vibration diaphragm layer, the backplane flaggy.
Preferably, the material of the vibration diaphragm layer and/or the backplane flaggy is polysilicon.
Preferably, the manufacture method also includes：On the backplane flaggy and/or the exposed surface of the MEMS
It is upper to form the anti adhering layer.
Preferably, the material of the anti adhering layer is alchlor.
Preferably, gaseous corrosion is carried out to first sacrifice layer or the second sacrifice layer by the way of HF acid is stifling.
In the MEMS of the embodiment of the present invention, vibration diaphragm has bump on the surface of cavity downward, and this is dashed forward
Point can effectively reduce the contact area of vibration diaphragm and substrate, so as to reduce or prevent adhesion, it is to avoid component failure；Vibration
Alchlor anti adhering layer is formed on all exposed surfaces between barrier film and substrate, between backplane flaggy and vibration diaphragm,
Due to the hydrophobicity and low surface adhesion of alchlor, the purpose of dual anti-adhesion had both been played, and has not influenceed device performance.
In addition, in the manufacture method of the MEMS of the embodiment of the present invention, pit is formed in the upper surface of the first sacrifice layer,
And vibration diaphragm layer is formed on the first sacrifice layer and fills pit, after it will sacrifice layer segment removal, it is filled in pit
Vibration diaphragm layer forms bump, reduces the contact area of exercise quality block and substrate, so as to reduce or prevent adhesion, keeps away
Exempt from component failure；Formed on all exposed surfaces between vibration diaphragm and substrate, between backplane flaggy and vibration diaphragm
Alchlor anti adhering layer, due to the hydrophobicity and low surface adhesion of alchlor, had both played the purpose of dual anti-adhesion, again
Do not influence device performance.
Brief description of the drawings
By description referring to the drawings to the embodiment of the present invention, above-mentioned and other purposes of the invention, feature and
Advantage will be apparent from, in the accompanying drawings：
Fig. 1 is the schematic flow sheet of the manufacture method of MEMS according to embodiments of the present invention；
Fig. 2 to Figure 12 be MEMS according to embodiments of the present invention manufacture method in the corresponding device of each step cut open
Face schematic diagram.
Embodiment
Various embodiments of the present invention are more fully described hereinafter with reference to accompanying drawing.In various figures, identical element
Represented using same or similar reference.For the sake of clarity, the various pieces in accompanying drawing are not necessarily to scale.
The present invention can be presented in a variety of manners, some of examples explained below.
Fig. 1 is the schematic flow sheet of the manufacture method of MEMS according to embodiments of the present invention.As shown in figure 1, according to
The manufacture method of the MEMS of the present embodiment may include steps of.
There is provided substrate in step S101, the first sacrifice layer is formed on the substrate.
In step s 102, the upper surface of first sacrifice layer is performed etching to form pit.
In step s 103, being formed in the upper surface of first sacrifice layer includes the vibration diaphragm layer of release aperture, described
The vibration diaphragm layer filling pit.
In step S104, the second sacrifice layer of the covering vibration diaphragm layer is formed.
In step S105, being formed in the upper surface of second sacrifice layer includes the backplane flaggy of release aperture.
In step s 106, substrate the back side formed deep trouth, and by the deep trouth substrate is corroded with
The first cavity is formed in the substrate.
In step s 107, by the release aperture of vibration diaphragm layer and the release aperture of the backplane flaggy to described
First sacrifice layer and the second sacrifice layer are corroded to form the second cavity in the first sacrifice layer, formed in the second sacrifice layer
3rd cavity, the vibration diaphragm layer being filled in the pit is prominent to second cavity.
In step S108, anti adhering layer is formed on the exposed surface between the substrate and vibration diaphragm layer.
It is described in detail referring to Fig. 2 to Figure 12.
As shown in Fig. 2 providing substrate 10 first, the first sacrifice layer 102 is then formed in the substrate 10.It is used as one
It is preferred that example, the substrate 10 can be Semiconductor substrate 101.More specifically, Semiconductor substrate 101 can be conventional half
Silicon substrate in semiconductor process, for example, can be that crystal orientation is<100>N-type silicon substrate.The material of first sacrifice layer 102 can be
Insulating materials in conventional semiconductor process, such as silica.It is, for example, possible to use thermal oxide, low-pressure chemical vapor phase deposition
Or the method such as plasma enhanced chemical vapor deposition (PECVD) forms silica material in Semiconductor substrate 101 (LPVCD)
First sacrifice layer 102 of matter.The typical thickness of first sacrifice layer 102 can be 1 μm to 2 μm.
As shown in figure 3, performing etching the upper surface of first sacrifice layer 102 to form pit 103.Further and
Speech, can use the photoetching process in conventional semiconductor process, the figure of pit 103 is formed in the upper surface of the first sacrifice layer 102
Shape window, then passes through the methods such as dry etching or wet etching formation pit 103.The depth of pit 103 is to be subsequently formed
Bump height, it is preferable that the depth of pit 103 be 0.5 μm to 0.8 μm.The flat shape and size of pit 103 can roots
Set according to being actually needed, such as V-arrangement, inverted trapezoidal, circular arc.Preferably, the size of the graphical window of pit 103 is 1 μ
M to 2 μm.As a nonrestrictive example, pit A flat shape can be 1 μm * 0.6 μm of V-arrangement.
As shown in figure 4, being formed in the upper surface of first sacrifice layer 102 includes the vibration diaphragm layer 104 of release aperture, institute
State the vibration diaphragm layer filling pit 103.The material of vibration diaphragm layer 104 for example can be polysilicon or the polycrystalline of doping
Silicon, but it is not limited to this.
Furthermore, low-pressure chemical vapor phase deposition (LPVCD) method can be used, is formed sediment on the first sacrifice layer 102
The polysilicon of product doping, and it is graphical to its, and temperature during deposit can be 570 DEG C to 630 DEG C, deposit the polycrystal layer of formation
Thickness can be 0.4 μm to 1.0 μm.Then, photoetching and etching technics formation by semiconductor industry is including release aperture
It is graphical so that formed vibration diaphragm layer 104.In the bottom of vibration diaphragm layer 104, vibration diaphragm layer 104 also fills up pit
103.Wherein, the part for being filled in pit 103 forms follow-up bump, can prevent viscous between vibration diaphragm layer and substrate
Even.
As shown in figure 5, forming the second sacrifice layer 105 of the covering vibration diaphragm layer 104.Second sacrifice layer 105
Material can be oxidation material, preferably silica.For example, can by low-pressure chemical vapor phase deposition (LPVCD) or wait from
Second sacrifice layer 105 of the method formation silica material of sub- enhanced chemical vapor deposition (PECVD), its thickness generally can be with
It is 2.0 μm to 4.0 μm.
As shown in fig. 6, being formed in the upper surface of second sacrifice layer 105 includes the backplane flaggy 106 of release aperture.The back of the body
The material of pole plate layer 106 for example can be polysilicon or the polysilicon of doping, but be not limited to this.
Furthermore, low-pressure chemical vapor phase deposition (LPVCD) method can be used, is formed sediment on the second sacrifice layer 105
The polysilicon of product doping, and it is graphical to its.Temperature during deposit can be 570 DEG C to 630 DEG C, deposit the polycrystal layer of formation
Thickness can be 1.0 μm to 2.0 μm.Then, photoetching and etching technics formation by semiconductor industry is including release aperture
It is graphical, so as to form backplane flaggy 106.
As shown in fig. 7, forming 3rd sacrifice layer 107 on the backplane flaggy 106.The material of the 3rd sacrifice layer 107
Material can be oxidation material, preferably silica.For example, can be increased by low-pressure chemical vapor phase deposition (LPVCD) or plasma
The method of strong type chemical vapor deposition (PECVD) forms the 3rd sacrifice layer 107 of silica material, and its thickness generally can be
0.3 μm to 0.5 μm.
As shown in figure 8, performed etching in the 3rd sacrifice layer 107, to form through hole 108a and 108b, through hole 108a's
Vibration diaphragm layer 104 is exposed in bottom, and backplane flaggy 106 is exposed in through hole 108b bottom.Furthermore, can be using conventional half
The photoetching process of conductor, in the formation through hole of 3rd sacrifice layer 107 108a window and through hole 108b window, afterwards by dry
The method formation through hole such as method etching or wet etching 108a and 108b.Through hole 108a depth causes through hole 108a bottom-exposeds to go out
Vibration diaphragm layer 104, through hole 108b depth causes through hole 108b bottom-exposeds to go out backplane flaggy 106.Through hole 108a can be used as
The fairlead that subsequent metal layer is connected with vibration diaphragm layer 104, through hole 108b can be used as subsequent metal layer and backplane flaggy 106
The fairlead being connected.
As shown in figure 9, metal level 109 is formed in the 3rd sacrifice layer 107, and it is graphical to the metal level 109
Form lead.Furthermore, sputtering or the evaporation technology in conventional semiconductor process can be used, in 3rd sacrifice layer 107
Upper deposited metal layer 106, its thickness can be 1 μm~2 μm, its material can be fine aluminium (Al), aluminium silicon (Al-Si1%) or
Ti+TiN+Al-Si.Afterwards, metal level 106 is patterned by the photoetching and etching technics of semiconductor industry, so that shape
Into one or more leads.
As shown in Figure 10, deep trouth is formed at the back side of substrate 10, and the substrate 10 is corroded by the deep trouth
To form the first cavity 110 in the substrate.Furthermore, by conventional semiconductor photoetching technological method, in substrate 10
The back side forms cavity pattern, by special deep etching machine, can typically select the AMS200 deep trouths of Alcatel companies of the U.S.
The etching apparatus such as etching machine, utilize MEMS industries routine Bosch techniques, etch cavity deep trouth.
As shown in figure 11, first cavity 110 and vibration diaphragm layer can be passed through by the way of HF acid gas is mutually fumigated
104 release aperture is corroded to first sacrifice layer 102 with the first sacrifice layer 102 below the vibration diaphragm 104
The second cavity of middle formation, the vibration diaphragm layer 104 being filled in the pit 103 is prominent to second cavity；By described
The release aperture of backplane flaggy 106 is corroded sacrificial with second below the backplane flaggy 106 to second sacrifice layer 105
The 3rd cavity is formed in domestic animal layer 105.Furthermore, for the first sacrifice layer 102 of silica material, HF acid gas can be used
Mutually stifling mode, the part corrosion of the first sacrifice layer 102 between vibration diaphragm layer 104 and substrate 10 is removed so that
Vibration diaphragm layer 104 is released, and obtains movable vibration diaphragm.Vibration diaphragm after release is in motion, at least partly meeting
The second cavity into the first sacrifice layer 102.For the second sacrifice layer 105 of silica material, HF acid gas phases can be used
Stifling mode, the part corrosion of the second sacrifice layer 105 between backplane flaggy 106 and vibration diaphragm layer 104 is removed, shape
Into the 3rd cavity.
After the first sacrifice layer 102 is partially removed, the vibration diaphragm layer 104 in pit 103 is exposed, and is formed
Bump 104a.Bump 104a can reduce contact area between vibration diaphragm and substrate 10 or with the first sacrifice layer
Contact area between 102, even if in this way, come in contact, because elastic restoring force is much larger than bump 104a superficial attractive forces,
Therefore it can't stick together.
As shown in figure 12, the substrate 10 and the vibration diaphragm layer 104 between exposed surface on, backplane flaggy
106 and the MEMS on form anti adhering layer on other exposed surfaces.The material of the anti adhering layer is three oxidations
Aluminium.
Furthermore, using atomic layer deposition (ALD) equipment, deposit source is used as by trimethyl aluminium and water, control is anti-
Room temperature is answered in the range of 100 DEG C~400 DEG C, pressure is in several millibars, in the substrate 10 and vibration diaphragm layer
On exposed surface between 104, in backplane flaggy 106 and the MEMS alchlor is deposited on other exposed surfaces
Layer 111, its thickness can be 2nm~10nm.The hydrophobicity of alchlor and low surface adhesion, had both played dual anti-adhesion
Purpose, and device performance is not influenceed.
In the MEMS of the embodiment of the present invention, vibration diaphragm has bump on the surface of cavity downward, and this is dashed forward
Point can effectively reduce the contact area of vibration diaphragm and substrate, so as to reduce or prevent adhesion, it is to avoid component failure；Vibration
Alchlor anti adhering layer is formed on all exposed surfaces between barrier film and substrate, between backplane flaggy and vibration diaphragm,
Due to the hydrophobicity and low surface adhesion of alchlor, the purpose of dual anti-adhesion had both been played, and has not influenceed device performance.
In addition, in the manufacture method of the MEMS of the embodiment of the present invention, pit is formed in the upper surface of the first sacrifice layer,
And vibration diaphragm layer is formed on the first sacrifice layer and fills pit, after it will sacrifice layer segment removal, it is filled in pit
Vibration diaphragm layer forms bump, reduces the contact area of exercise quality block and substrate, so as to reduce or prevent adhesion, keeps away
Exempt from component failure；Formed on all exposed surfaces between vibration diaphragm and substrate, between backplane flaggy and vibration diaphragm
Alchlor anti adhering layer, due to the hydrophobicity and low surface adhesion of alchlor, had both played the purpose of dual anti-adhesion, again
Do not influence device performance.
According to embodiments of the invention as described above, these embodiments do not have all details of detailed descriptionthe, not yet
It is only described specific embodiment to limit the invention.Obviously, as described above, it can make many modifications and variations.This explanation
Book is chosen and specifically describes these embodiments, is in order to preferably explain the principle and practical application of the present invention, so that affiliated
Technical field technical staff can be used using modification of the invention and on the basis of the present invention well.The protection model of the present invention
The scope that enclosing should be defined by the claims in the present invention is defined.
Claims (19)
1. a kind of MEMS, it is characterised in that including：
Substrate, the substrate has the first cavity；
First sacrifice layer, in the substrate, has the second cavity in first sacrifice layer；
Vibration diaphragm layer, at least a portion of the vibration diaphragm layer is supported by first sacrifice layer, the vibration diaphragm layer
Including the vibration diaphragm above second cavity, the vibration diaphragm has to institute towards the surface of second cavity
State the bump of the second cavity protrusion；
Second sacrifice layer, on vibration diaphragm layer, has the 3rd cavity, the vibration diaphragm in second sacrifice layer
At least a portion be located at the 3rd cavity in；
Backplane flaggy, on second sacrifice layer, at least a portion of the backplane flaggy is by the second sacrifice layer branch
Support, the backplane flaggy includes being located at the back pole plate above the 3rd cavity；
Wherein, the MEMS also includes：
Anti adhering layer, between the substrate and vibration diaphragm layer, all naked between backplane flaggy and vibration diaphragm
Reveal on surface.
2. MEMS according to claim 1, it is characterised in that first sacrifice layer and second sacrifice layer
Material be silica.
3. MEMS according to claim 1, it is characterised in that the substrate is Semiconductor substrate, and described first is sacrificial
Domestic animal layer is located in the Semiconductor substrate.
4. MEMS according to claim 1, it is characterised in that the bump is shaped as V-arrangement, inverted trapezoidal or circular arc
Shape, the bump is 0.5 μm to 0.8 μm from the vibration diaphragm towards the height that the surface of second cavity is protruded.
5. MEMS according to claim 1, it is characterised in that also include：3rd sacrifice layer, positioned at the back pole plate
On layer；
Metal level, in the 3rd sacrifice layer, the metal level includes lead.
6. MEMS according to claim 5, it is characterised in that there is through hole, the gold in the 3rd sacrifice layer
Category layer is connected via the through hole with vibration diaphragm layer, the backplane flaggy.
7. MEMS according to claim 1, it is characterised in that the vibration diaphragm layer and/or the backplane flaggy
Material be polysilicon.
8. MEMS according to claim 1, it is characterised in that the anti adhering layer is also located on the backplane flaggy
And/or on the exposed surface of the MEMS.
9. MEMS according to claim 1, it is characterised in that the material of the anti adhering layer is alchlor.
10. a kind of manufacture method of MEMS, it is characterised in that including：
Substrate is provided, the first sacrifice layer is formed on the substrate；
The upper surface of first sacrifice layer is performed etching to form pit；
Being formed in the upper surface of first sacrifice layer includes the vibration diaphragm layer of release aperture, and the vibration diaphragm layer filling is described
Pit；
Form the second sacrifice layer of the covering vibration diaphragm layer；
Being formed in the upper surface of second sacrifice layer includes the backplane flaggy of release aperture；
Form deep trouth at the back side of substrate, and by the deep trouth substrate is corroded to form the in the substrate
One cavity；
By the release aperture of vibration diaphragm layer and the release aperture of the backplane flaggy to first sacrifice layer and second
Sacrifice layer is corroded to form the second cavity in the first sacrifice layer, the 3rd cavity is formed in the second sacrifice layer, is filled in
Vibration diaphragm layer in the pit is prominent to second cavity；
Formed between the substrate and vibration diaphragm layer, on all exposed surfaces between backplane flaggy and vibration diaphragm
Anti adhering layer.
11. manufacture method according to claim 10, it is characterised in that first sacrifice layer and second sacrifice
The material of layer is silica.
12. manufacture method according to claim 11, it is characterised in that the substrate is Semiconductor substrate, described first
Sacrifice layer is located in the Semiconductor substrate.
13. manufacture method according to claim 11, it is characterised in that the pit is shaped as V-arrangement, inverted trapezoidal or circle
Arc, depth is 0.5 μm to 0.8 μm.
14. manufacture method according to claim 10, it is characterised in that also include：
3rd sacrifice layer is formed on the backplane flaggy；
Metal level is formed in the 3rd sacrifice layer, and to metallic layer graphic formation lead.
15. manufacture method according to claim 14, it is characterised in that also include：
Through hole is formed in the 3rd sacrifice layer, the metal level is via the through hole and vibration diaphragm layer, the back of the body
Pole plate layer connection.
16. manufacture method according to claim 10, it is characterised in that the vibration diaphragm layer and/or the back pole plate
The material of layer is polysilicon.
17. manufacture method according to claim 10, it is characterised in that also include：
The anti adhering layer is formed on the backplane flaggy and/or on the exposed surface of the MEMS.
18. manufacture method according to claim 10, it is characterised in that the material of the anti adhering layer is alchlor.
19. manufacture method according to claim 10, it is characterised in that sacrificial to described first by the way of HF acid is stifling
Domestic animal layer or the second sacrifice layer carry out gaseous corrosion.
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| CN108117034B (en) | 2017-12-29 | 2023-12-26 | 杭州士兰集成电路有限公司 | MEMS component and manufacturing method thereof |
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| WO2020133312A1 (en) * | 2018-12-29 | 2020-07-02 | 共达电声股份有限公司 | Mems sound sensor, mems microphone, and electronic device |
| CN112079326B (en) * | 2019-06-12 | 2024-01-30 | 芯恩（青岛）集成电路有限公司 | MEMS device structure and preparation method thereof |
| CN111498793B (en) * | 2020-05-01 | 2023-10-27 | 深迪半导体(绍兴)有限公司 | MEMS device and processing method thereof |
| CN112408312B (en) * | 2021-01-20 | 2021-05-14 | 中芯集成电路制造(绍兴)有限公司 | MEMS device manufacturing method and MEMS device |
| CN113104806B (en) * | 2021-03-11 | 2024-05-03 | 中国电子科技集团公司第五十四研究所 | Preparation method of MEMS device composite metal sacrificial layer |
| CN113735055B (en) * | 2021-07-21 | 2024-06-21 | 绍兴中芯集成电路制造股份有限公司 | MEMS device manufacturing method and MEMS device |
| CN118458683B (en) * | 2024-07-09 | 2024-09-20 | 芯联集成电路制造股份有限公司 | MEMS device, mask plate and preparation method of MEMS device |
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