CN111490061A - Anti-crosstalk Micro-L ED display screen and manufacturing method thereof - Google Patents
Anti-crosstalk Micro-L ED display screen and manufacturing method thereof Download PDFInfo
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- CN111490061A CN111490061A CN202010482962.0A CN202010482962A CN111490061A CN 111490061 A CN111490061 A CN 111490061A CN 202010482962 A CN202010482962 A CN 202010482962A CN 111490061 A CN111490061 A CN 111490061A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Abstract
The invention relates to an anti-crosstalk Micro-L ED display screen and a manufacturing method thereof, wherein a reflecting layer is formed on a non-light-emitting surface of a quantum dot luminescent material, so that the light absorption phenomenon of a quantum dot luminescent material layer is reduced, the light crosstalk is eliminated, the light-emitting efficiency is improved, and the anti-crosstalk Micro-L ED display screen is particularly suitable for a display screen structure with the height of the quantum dot luminescent material being more than 5 micrometers.
Description
Technical Field
The invention belongs to the technical field of Micro display, and particularly relates to a Micro-L ED display screen and a manufacturing method thereof.
Background
With the rapid development of the VR/AR (virtual reality/augmented reality) industry, a display suitable for VR/AR is facing a high-speed growth period, in view of the fact that VR/AR systems are implemented by head-mounted devices, the display suitable for these devices must be Micro-display chips, the diagonal size is generally within 1 inch, and most is 0.6-0.7 inch.
With the further shrinking of pixels, the phenomenon of crosstalk between pixels of L ED microdisplays becomes more serious, and in a monochrome display, the severity of the problem can be reduced and alleviated by growing a reflective layer outside L ED pixels, however, one of the current methods for realizing colorization of Micro-L ED microdisplays is to use a blue L ED plus red/green quantum dot QD method, in such a display, in order to achieve better light conversion efficiency, the QD material tends to exceed 5 μm, in such a case, there is a problem of crosstalk occurring in the QD layer, and although BM (Black Matrix Black shading) material can be used to eliminate the problem (see US2018/0233537 Al), the light extraction efficiency is greatly reduced.
Disclosure of Invention
In order to solve the above technical problems, an object of the present invention is to provide a crosstalk prevention micro display panel with high light extraction efficiency and a method for manufacturing the same.
In order to achieve the purpose of the invention, the invention adopts the following technical scheme that the method for manufacturing the anti-crosstalk Micro-L ED display screen comprises the following steps:
s1, providing a substrate, wherein the substrate is provided with a plurality of L ED chips;
s2, flattening the substrate, growing an interlayer insulating layer, and forming a quantum well insulating layer on the interlayer insulating layer;
s3, manufacturing quantum wells which are patterned and distributed in an array on the surface of the quantum well insulating layer, and sequentially growing a reflecting layer and an insulating layer on the inner wall of each quantum well;
s4, filling quantum dot luminescent materials in the quantum wells;
s5, forming a protective insulating layer on the surface of the quantum well insulating layer;
s6, providing a driving backboard, peeling off the substrate, and flip-chip bonding the L ED chip and the driving backboard.
In the above technical solution, furthermore, a L ED insulating layer is grown on the surface of the L ED chip, and a light blocking layer is further disposed on the non-light-emitting surface of the L ED chip.
Preferably, the quantum well insulating layer is selected from SiO2SiN and Al2O3One kind of (1).
Preferably, the reflective layer is a metal reflective layer.
Preferably, the material of the metal reflective layer is one or an alloy material formed by any two or more of Ag, Al and Ti materials.
Preferably, the thickness of the reflecting layer is less than or equal to 500 nm.
Preferably, the display panel comprises a plurality of pixel structures, each of the pixel structures comprises at least one pair of L ED chips and a plurality of quantum dot luminescent materials stacked on the at least one pair of L ED chips, wherein in step S3, a plurality of quantum wells are formed, and in step S4, a plurality of quantum dot luminescent materials are filled at a time.
Alternatively, the display panel comprises a plurality of pixel structures, each of the pixel structures comprises at least one pair of L ED chips and a plurality of quantum dot luminescent materials respectively stacked on the at least one pair of L ED chips, in step S3, a quantum well is formed, in step S4, a quantum dot luminescent material is filled, and steps S3 and S4 are repeated until a plurality of quantum dot luminescent materials are formed.
Preferably, the material of the protective insulating layer is selected from SiO2SiN and Al2O3One kind of (1).
The invention also provides an anti-crosstalk Micro-L ED display screen, which comprises a driving backboard and a plurality of pixel structures welded on the driving backboard, wherein each pixel structure comprises at least one pair of L ED chips and at least one pair of quantum dot luminescent materials stacked on the light emergent side of the L ED chip, and the non-light emergent sides of the at least one pair of quantum dot luminescent materials are provided with reflecting layers.
Preferably, the L ED chip surface is sequentially provided with a L ED insulating layer, a light blocking layer and a planarization layer, wherein the light blocking layer is arranged on the non-light-emitting surface of the L ED chip.
Preferably, an interlayer insulating layer is further disposed between the L ED chip and the quantum dot luminescent material.
Preferably, the non-light-emitting side of the quantum dot luminescent material is sequentially provided with an insulating layer, the reflecting layer and a quantum well insulating layer.
Preferably, a protective insulating layer is formed on the light emitting surface of the at least one pair of quantum dot light emitting materials.
Compared with the prior art, the invention has the following beneficial effects: the invention can effectively reduce the light absorption phenomenon of the quantum dot luminescent material layer, eliminate light crosstalk and improve the light emitting efficiency, and is particularly suitable for the display screen structure with the height of the quantum dot luminescent material being more than 5 microns.
Drawings
Fig. 1 is a schematic diagram of a light-emitting structure of a micro display screen in the prior art;
FIGS. 2-12 are schematic views of the steps of the method for manufacturing the Micro-L ED display panel according to the present invention;
FIG. 13 is a schematic diagram of the light extraction structure of the finally obtained Micro-L ED display screen;
the LED chip comprises a substrate 11, a substrate 12, an L ED chip 13, a L ED insulating layer, a light blocking layer 14, a planarization layer 15, an interlayer insulating layer 16, a quantum well insulating layer 21, a quantum well insulating layer 22, a quantum well 22', a quantum well 23, a first quantum dot light emitting material 24, a first reflecting layer 25, a first insulating layer 26, a second quantum dot light emitting material 27, a second reflecting layer 28, a second insulating layer 30, a protective insulating layer 40, a driving back plate and an insulating layer 41.
Detailed Description
To explain the technical content, structural features, achieved objects and effects of the invention in detail, the following description will be made in conjunction with the accompanying drawings with the embodiments, wherein the "upper" and "lower" positional relationships in the description correspond to the upper and lower portions in fig. 13, the upper portion in fig. 13 is the light emitting direction of the display screen, the L ED chips and the upper surfaces of the quantum dot light emitting materials are the respective light emitting surfaces, and the corresponding L ED chips, the corresponding quantum dot light emitting materials, and the corresponding quantum dot light emitting materials.
Fig. 13 is a schematic view of a portion of a final finished Micro display screen, which may extend in two directions in an array form in a two-dimensional plane to form a Micro-L ED display screen having a certain size, fig. 13 illustrates a schematic view of a structure of the final finished Micro display screen, where the final finished Micro display screen includes a driving backplane 40 and a plurality of pixel structures 100 soldered on the driving backplane 40, each pixel structure 100 includes at least one pair of L ED chips 12 and at least one pair of quantum dot luminescent materials, i.e., a first quantum dot luminescent material 23 and a second quantum dot luminescent material 26, stacked on a light emitting side of the L chip 12, each of the pixel structures 100 includes a reflective layer 24, 27, i.e., the first reflective layer 24 and the second reflective layer 27, on a light emitting side of each of the quantum dot luminescent materials 23, 26, the right side of the quantum dot luminescent material L is provided with a typical light emitting path L, light emitted from the right side of the quantum dot luminescent material 12 enters the second reflective layer 24, and the light emitting material layer 64 is converted into the quantum dot luminescent material layer 26, so that the light emitting from the right side of the quantum dot material enters the quantum dot luminescent material layer 64 and the light emitting surface of the quantum dot material layer 64 and the quantum dot material is converted into the quantum dot material to reduce the light emitting surface of the light emitting material, thereby reducing the light emitting efficiency of the light emitting chip 12.
In the present embodiment, each pixel structure 100 includes a pair of blue L ED chips 12, and a first quantum dot luminescent material 23 that emits red light after being excited and a second quantum dot luminescent material 26 that emits green light after being excited, and those skilled in the art can select other luminescent combinations according to common knowledge, or adopt a full-color L ED pixel structure that includes three kinds of quantum dot luminescent materials, namely red, blue, and green.
Preferably, the reflective layers are all metal reflective layers. Furthermore, the first reflective layer 24 and the second reflective layer 27 are made of materials with high reflectivity to visible light, such as Ag, Al, Ti or alloy materials of the above materials, and the thickness is less than or equal to 500nm, and the reflectivity to visible light is more than or equal to 80%.
Preferably, the surface of the L ED chip 12 is sequentially provided with a L ED insulating layer 13, a light blocking layer 14 and a planarization layer 15, the light blocking layer 14 is arranged on the non-light-emitting surface of the L ED chip 12, the light blocking layer 14 is made of a metal material with good visible light reflectivity, the thickness of the metal material is less than or equal to 500nm, the visible light reflectivity is more than or equal to 80%, and the light blocking layer 14 can effectively reduce optical crosstalk of the L ED chip layer and improve light extraction efficiency.
More preferably, an interlayer insulating layer 16 is further arranged between the L ED chip 12 and the quantum dot luminescent materials 23 and 26, wherein the interlayer insulating layer 16 is selected from SiO2、SiN、Al2O3The light transmittance of the insulating material is more than 90 percent.
The non-light-emitting side of the first quantum dot light-emitting material 23 is provided with a first insulating layer 25, a first reflective layer 24, and a quantum well insulating layer 21 in this order. The non-light-emitting side of the second quantum dot light-emitting material 26 is provided with a second insulating layer 28, a second reflective layer 27, and a quantum well insulating layer 21 in this order. The quantum well insulating layer 21 is made of SiO2、SiN、Al2O3And the interlayer insulating layer 16 is made of one of insulating materials, which are respectively selected from different materials from the interlayer insulating layer 16, and the purpose of the interlayer insulating layer 16 is to serve as an etching stopper when the quantum well insulating layer 21 is etched.
The light emitting surfaces of the first quantum dot luminescent material 23 and the second quantum dot luminescent material 26 are both formed with a protective insulating layer 30, and the protective insulating layer 30 is made of SiO2、SiN、Al2O3The light transmittance of the insulating material is more than 90 percent.
According to the manufacturing process of the invention, the manufacturing process of the micro display screen is as follows:
s1, referring to fig. 2, providing a substrate 11, forming a plurality of patterned L ED chips 12 on the substrate 11, growing a L ED insulating layer 13 on the surface of the L ED chip 12, and disposing a light blocking layer 14 on the non-light-emitting surface of the L ED chip 12, wherein the light blocking layer 14 is made of a material with high reflectivity to visible light;
s2, referring to fig. 3 and 4, planarizing the substrate 11 to form a planarization layer 15, growing an interlayer insulating layer 16 on the planarization layer 15, and forming a quantum well insulating layer 21 on the interlayer insulating layer 16;
s3, referring to fig. 5 and 6, forming patterned quantum wells 22 distributed in an array on the surface of the quantum well insulating layer 21, and sequentially growing a reflective layer 24 and an insulating layer 25 on the inner walls of the quantum wells 22;
s4, referring to fig. 7, the quantum well 22 is filled with the quantum dot luminescent material 23;
referring to fig. 8 to 11, the insulating layer 25' is formed, and the steps S3 and S4 are repeated to form the second quantum dot light emitting material 26;
s5, referring to fig. 12, forming a protective insulating layer 30 on the surface of the quantum well insulating layer 21;
s6, referring to fig. 13, providing a driving backplane 40, peeling off the substrate 11, and flip-chip bonding the L ED chip 12 and the driving backplane 40.
In the present embodiment and the examples shown in the drawings, the pixel structure 100 of the Micro-L ED display screen comprises a pair of L ED chips 12 and a pair of quantum dot luminescent materials, and the above-mentioned manufacturing processes are provided with a method of sequentially forming quantum wells and successively filling the quantum dot luminescent materials, i.e. in step S3, a quantum well 22 is formed first, and a reflective layer and an insulating layer of the quantum well are formed, in step S4, a quantum dot luminescent material 23 is filled, then steps S3 and S4 are repeated to form a new quantum well 22 ', then a reflective layer 27 and an insulating layer 28 of the quantum well 22' are formed, and finally a quantum dot luminescent material 26 is filled until all the quantum dot luminescent materials are completed.
In other embodiments of the present invention, a plurality of quantum wells 22, 22' may be formed at a time in step S3, and a reflective layer and an insulating layer are sequentially formed in the plurality of quantum wells, and then the plurality of quantum dot luminescent materials 23, 26 are filled by printing at a time or in batches in step S4. The method has the advantages of high manufacturing efficiency and the defects of poor precision and high difficulty of quantum printing.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the foregoing description only for the purpose of illustrating the principles of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the invention as defined by the appended claims, specification, and equivalents thereof.
Claims (14)
1. A method for manufacturing an anti-crosstalk Micro-L ED display screen is characterized by comprising the following steps:
s1, providing a substrate (11), wherein the substrate (11) is provided with a plurality of L ED chips (12);
s2, flattening the substrate (11), growing an interlayer insulating layer (16), and forming a quantum well insulating layer (21) on the interlayer insulating layer (16);
s3, manufacturing quantum wells (22, 22 ') distributed in a pattern and array on the surface of the quantum well insulating layer (21), and sequentially growing a reflecting layer (24, 27) and an insulating layer (25, 28) on the inner wall of the quantum wells (22, 22');
s4, filling quantum dot luminescent materials (23, 26) in the quantum wells (22, 22');
s5, forming a protective insulating layer (30) on the surface of the quantum well insulating layer (21);
s6, providing a driving backboard (40), peeling off the substrate (11), and flip-chip bonding the L ED chip (12) and the driving backboard (40).
2. The manufacturing method of the anti-crosstalk Micro-L ED display screen according to claim 1, wherein a L ED insulating layer (13) is grown on the surface of the L ED chip (12), and a light blocking layer (14) is further disposed on the non-light-emitting surface of the L ED chip (12).
3. The method for manufacturing the anti-crosstalk Micro-L ED display screen according to claim 1, wherein the quantum well insulating layer (21) is selected from SiO2SiN and Al2O3One kind of (1).
4. The method for manufacturing the anti-crosstalk Micro-L ED display screen according to claim 1, wherein the reflective layer is a metal reflective layer.
5. The method for manufacturing the anti-crosstalk Micro-L ED display screen according to claim 4, wherein the metal reflective layer is made of one or two or more of Ag, Al and Ti.
6. The method for manufacturing the anti-crosstalk Micro-L ED display screen according to claim 4, wherein the thickness of the reflective layer is less than or equal to 500 nm.
7. The method of claim 1, wherein the display panel comprises a plurality of pixel structures (100), each of the pixel structures (100) comprises at least one pair of the L ED chips (12) and a plurality of quantum dot luminescent materials (23, 26) stacked on the at least one pair of the L ED chips (12), the quantum wells (22, 22') are formed in the step S3, and the quantum dot luminescent materials (23, 26) are filled in the step S4 at a time.
8. The method of claim 1, wherein each of said pixel structures (100) comprises at least one pair of said L ED chips (12) and a plurality of quantum dot luminescent materials (23, 26) stacked on said at least one pair of L ED chips (12), said step S3 is to form one said quantum well (22 or 22'), said step S4 is to fill one said quantum dot luminescent material (23 or 26), and said steps S3 and S4 are repeated until a plurality of said quantum dot luminescent materials (23, 26) are formed.
9. The method for manufacturing the anti-crosstalk Micro-L ED display screen according to claim 1, wherein the material of the protective insulating layer (30) is selected from SiO2SiN and Al2O3One kind of (1).
10. An anti-crosstalk Micro-L ED display screen comprises a driving backboard (40) and a plurality of pixel structures (100) welded on the driving backboard (40), wherein each pixel structure (100) comprises at least one pair of L ED chips (12) and at least one pair of quantum dot luminescent materials (23, 26) stacked on the light emitting side of the L ED chip (12), and the anti-crosstalk Micro-L ED display screen is characterized in that the non-light emitting sides of the at least one pair of quantum dot luminescent materials (23, 26) are provided with reflecting layers (24, 27).
11. The anti-crosstalk Micro-L ED display screen according to claim 10, wherein a L ED chip (12) is sequentially provided with a L ED insulating layer (13), a light blocking layer (14) and a planarization layer (15), and the light blocking layer (14) is disposed on a non-light-emitting surface of the L ED chip (12).
12. The anti-crosstalk Micro-L ED display screen according to claim 10, wherein an interlayer insulating layer (16) is further disposed between the L ED chip (12) and the quantum dot luminescent materials (23, 26).
13. The anti-crosstalk Micro-L ED display screen according to claim 10, wherein the non-light-emitting side of the quantum dot luminescent material (23, 26) is sequentially provided with an insulating layer (25, 28), the reflective layer (24, 27) and a quantum well insulating layer (21).
14. The anti-crosstalk Micro-L ED display screen according to claim 10, wherein the light emitting surface of at least one pair of quantum dot luminescent materials (23, 26) is formed with a protective insulating layer (30).
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| CN202010482962.0A CN111490061A (en) | 2020-06-01 | 2020-06-01 | Anti-crosstalk Micro-L ED display screen and manufacturing method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112768584A (en) * | 2019-09-20 | 2021-05-07 | 深圳市晶相技术有限公司 | Light-emitting diode chip and application thereof |
| CN113363276A (en) * | 2021-05-28 | 2021-09-07 | 业成科技（成都）有限公司 | Display panel and manufacturing method thereof |
| CN114497112A (en) * | 2022-03-30 | 2022-05-13 | 季华实验室 | MicroLED display panel manufacturing method and display panel |
| US11923399B2 (en) | 2021-01-29 | 2024-03-05 | PlayNitride Display Co., Ltd. | Micro light emitting diode display panel |
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2020
- 2020-06-01 CN CN202010482962.0A patent/CN111490061A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112768584A (en) * | 2019-09-20 | 2021-05-07 | 深圳市晶相技术有限公司 | Light-emitting diode chip and application thereof |
| CN112768584B (en) * | 2019-09-20 | 2023-09-19 | 广东晶相光电科技有限公司 | Light-emitting diode chip and application thereof |
| US11923399B2 (en) | 2021-01-29 | 2024-03-05 | PlayNitride Display Co., Ltd. | Micro light emitting diode display panel |
| CN113363276A (en) * | 2021-05-28 | 2021-09-07 | 业成科技（成都）有限公司 | Display panel and manufacturing method thereof |
| CN113363276B (en) * | 2021-05-28 | 2022-11-22 | 业成科技（成都）有限公司 | Display panel and manufacturing method thereof |
| CN114497112A (en) * | 2022-03-30 | 2022-05-13 | 季华实验室 | MicroLED display panel manufacturing method and display panel |
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