CN218769588U

CN218769588U - Micro light emitting device, display panel and display apparatus

Info

Publication number: CN218769588U
Application number: CN202223118797.4U
Authority: CN
Inventors: 谢相伟; 徐宸科; 叶岩溪
Original assignee: Xiamen Xinying Display Technology Co ltd
Current assignee: Xiamen Xinying Display Technology Co ltd
Priority date: 2022-11-23
Filing date: 2022-11-23
Publication date: 2023-03-28
Anticipated expiration: 2032-11-23

Abstract

The embodiment of the utility model discloses little luminescent device, display panel and display device, little luminescent device includes: a first semiconductor layer including a first region and a second region opposing each other in a first direction on one surface thereof; a first electrode disposed in the first region and electrically connected to the first semiconductor layer; a light emitting layer disposed on the second region and extending in a second direction perpendicular to the first direction; the second semiconductor layer is arranged on one side, opposite to the first semiconductor layer, of the light emitting layer; the second electrode is arranged on one side, back to the light-emitting layer, of the second semiconductor layer and is electrically connected with the second semiconductor layer; wherein the micro light emitting device has a first width dimension along the first direction and a second width dimension along the second direction, the second width dimension being greater than or equal to the first width dimension. The embodiment of the utility model discloses shimmer device has great light-emitting area, has the characteristics that promote luminous efficacy.

Description

Micro light emitting device, display panel and display apparatus

Technical Field

The utility model relates to a show technical field, especially relate to a little luminous chip, a display panel and a display device.

Background

Micro LED (Micro Light Emitting Diode) display technology is widely applied to various display devices at present, a Micro LED chip is an important component of a Micro LED display, along with the increasing resolution of the display, the size of each pixel in a display panel is smaller and smaller, the size of the chip is smaller and smaller, the Light Emitting area and the Light Emitting efficiency of a single chip can be influenced when the size is smaller, and the Light Emitting area and the Light Emitting efficiency of the traditional Micro LED chip still have a space for improving.

Therefore, it is desirable to provide a solution that can improve the light emitting area and light emitting efficiency of a single chip when the chip is made smaller.

SUMMERY OF THE UTILITY MODEL

Therefore, for overcoming at least some defects in the prior art, the embodiment of the present invention provides a micro light emitting device, a display panel and a display device, which can improve the light emitting area and increase the light emitting efficiency.

In particular, in one aspect, an embodiment of the present invention provides a micro light emitting device, including: a first semiconductor layer including a first region and a second region opposing each other in a first direction on one surface thereof; a first electrode disposed in the first region and electrically connected to the first semiconductor layer; a light emitting layer disposed on the second region and extending in a second direction perpendicular to the first direction; the second semiconductor layer is arranged on one side, opposite to the first semiconductor layer, of the light-emitting layer; the second electrode is arranged on one side, back to the light-emitting layer, of the second semiconductor layer and is electrically connected with the second semiconductor layer; wherein the micro light emitting device has a first width dimension along the first direction and a second width dimension along the second direction, the second width dimension being greater than or equal to the first width dimension.

In one embodiment, the first width dimension is in a range of 20 to 30 micrometers.

In one embodiment, the difference between the second width dimension and the first width dimension is greater than or equal to 5 microns.

In one embodiment, the micro light emitting device further comprises a substrate disposed on a side of the first semiconductor layer facing away from the light emitting layer.

In one embodiment, the micro light emitting device further comprises an insulating layer covering the first region and extending to a side of the second semiconductor layer facing away from the light emitting layer; a first via hole and a second via hole are formed in the insulating layer, and the first electrode is electrically connected with the first semiconductor layer through the first via hole; the second electrode is electrically connected to the second semiconductor layer through the second via hole.

In one embodiment, the micro light emitting device further includes a reflective layer disposed between the second semiconductor layer and the second electrode.

In one embodiment, the first semiconductor layer is an N-type semiconductor layer and the second semiconductor layer is a P-type semiconductor layer.

An embodiment of the present invention further provides a display panel, including: a drive substrate; the micro light-emitting device as claimed in any one of the preceding claims, disposed on and electrically connected to a driving substrate.

In one embodiment, the driving substrate includes a plurality of pixel units, each of the pixel units has a plurality of the micro-light emitting devices disposed therein, each of the micro-light emitting devices has a short side along the second direction, and the short sides of two adjacent micro-light emitting devices in each of the pixel units are adjacent to each other.

An embodiment of the present invention further provides a display device, including the micro light emitting device or the display panel of any one of the above.

In view of the above, the above embodiments of the present invention can achieve one or more of the following advantages: traditional Micro LED chip structure is based on resolution ratio increasingly high, pixel size is littleer and continuous length and the width size who reduces the chip, the embodiment of the utility model provides a little light emitting device sets up second width size bigger than first width size, and first width size is for deciding a limit of chip pixel size, compares in the unchangeable condition of current size in first width size and has increased little light emitting device's light-emitting area, has promoted luminous efficiency.

Drawings

The following detailed description of the embodiments of the present invention will be made with reference to the accompanying drawings.

Fig. 1 is a schematic structural view of a conventional Micro LED chip.

Fig. 2 is a schematic top view of a micro light emitting device according to an embodiment of the present invention.

Fig. 3 is a schematic cross-sectional view of the micro light emitting device D-D shown in fig. 2.

Fig. 4 is a schematic structural diagram of a display panel according to an embodiment of the present invention.

Fig. 5 is a schematic diagram illustrating the color difference problem of the conventional Micro LED display panel.

Fig. 6 is a schematic layout diagram of adjacent sub-pixels in a conventional Micro LED display panel.

Fig. 7 is a schematic structural diagram of a display device according to an embodiment of the present invention.

[ description of reference ]

10: a micro light emitting device; 11: a first semiconductor layer; 111: a first region; 112: a second region; 12: a first electrode; 13: a light emitting layer; 14: a second semiconductor layer; 15: a second electrode; 16: a substrate; 17: an insulating layer; 18: a reflective layer; 20: a drive substrate; 21: a pixel unit; 100: a display panel; 200: a display device.

Detailed Description

In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments of the present invention are described in detail below with reference to the accompanying drawings.

In order to make those skilled in the art better understand the technical solution of the present invention, the technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts shall belong to the protection scope of the present invention.

It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the invention described herein are, for example, capable of operation in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.

It should be noted that the division of the embodiments in the present invention is only for convenience of description and should not be construed as a limitation, and features in various embodiments may be combined and referred to each other without contradiction.

The Micro LED chip comprises a P-type semiconductor layer, an N-type semiconductor layer and a light emitting layer between the P-type semiconductor layer and the N-type semiconductor layer, the structure of the traditional Micro LED chip is shown in FIG. 1, the side length of one side of the P-type semiconductor layer and the N-type semiconductor layer is a ', the pixel size is a ' as the resolution of a display screen is higher and higher, and therefore the size of the MciroLED chip is smaller, but the size of the light emitting area is b ' and the width of the light emitting layer, and therefore the size of the chip is reduced according to the traditional design, and the light emitting area of the chip is also reduced. Therefore, the embodiment of the present invention provides a micro light emitting device to solve the above problems.

[ first embodiment ] A method for manufacturing a semiconductor device

A first embodiment of the present application provides a micro light emitting device 10, fig. 2 is a schematic top view of the micro light emitting device 10 in one embodiment, and fig. 3 is a schematic cross-sectional view taken along line D-D of fig. 2. Referring to fig. 2 and 3, the micro light emitting device 10 includes a first semiconductor layer 11, a light emitting layer 13, and a second semiconductor layer 14, and a first electrode 12 and a second electrode 15, which are sequentially stacked. The first semiconductor layer 11 includes a first region 111 and a second region 112 on one surface thereof, which are opposite in a first direction. The first electrode 12 is disposed in the first region 111 and electrically connected to the first semiconductor layer 11. The light emitting layer 13 is disposed on the second region 112 and extends in a second direction perpendicular to the first direction. The second semiconductor layer 14 is arranged on the side of the light-emitting layer 13 facing away from the first semiconductor layer 11. The second electrode 15 is disposed on a side of the second semiconductor layer 14 facing away from the light-emitting layer 13 and is electrically connected to the second semiconductor layer 14. The micro-light emitting device 10 has a first width a along a first direction and a second width b along a second direction, wherein the second width b is greater than or equal to the first width a.

In some embodiments, the Micro light emitting device 10 is a Micro LED chip, the first semiconductor layer 11 is an N-type semiconductor layer, such as an N-type gallium nitride layer (N-GaN), and the second semiconductor layer 14 is a P-type semiconductor layer, such as a P-type gallium nitride layer (P-GaN). The light-emitting layer 13 is a multilayer quantum well layer (MQWs, multiple quantum wells). The first width dimension a is a dimension of one side of the micro light emitting device 10 where both the first semiconductor layer 11 and the second semiconductor layer 14 are located, in the micro light emitting device 10 provided in this embodiment, the second width dimension b is greater than or equal to the first width dimension a, and since the first width dimension a determines the size of the pixel, under the condition that the size of the pixel is kept substantially consistent, the first width dimension a is substantially unchanged compared with the size a 'of the conventional chip, and the second width dimension b is greatly increased compared with the size b' of the conventional chip, which breaks through the design that the a 'of the conventional chip is greater than the b', so that the light emitting area of the micro light emitting device 10 is larger, and the light emitting efficiency is higher.

In some embodiments, the first width dimension a ranges from 20 to 30 microns. In one embodiment, the difference between the second width dimension b and the first width dimension a is greater than or equal to 5 micrometers. In one particular embodiment, the first width dimension a is 25 microns and the second width dimension b is 35 microns. When a 'is about 25 micrometers and b' is about 15 micrometers in the conventional chip size, the light emitting area of the micro light emitting device 10 provided by the present embodiment is larger. In addition, in order to match the pitch of the picked up chips with the pixels of the display backplane in the bulk transfer process, on the wafer (wafer) on which the chips grow, the period distance between adjacent chips is x, and x is greater than a ' and b ' in the conventional chips, for example, when a ' is 25 micrometers, the period distance x is about 36 micrometers.

In some embodiments, the micro light emitting device 10 further includes a substrate 16 disposed on a side of the first semiconductor layer 11 facing away from the light emitting layer 13. The substrate 16 is, for example, a sapphire substrate or a glass substrate, and it is necessary to grow a first semiconductor layer 11 and the like on the substrate 16 during the process of manufacturing the micro light emitting device 10, and the substrate 16 may be removed, for example, during the transfer process, after the micro light emitting device 10 is manufactured. In some embodiments, a buffer layer, which may be, for example, a gallium nitride material, is also disposed between the substrate 16 and the first semiconductor layer 11.

In some embodiments, the micro light emitting device 10 further includes an insulating layer 17 covering the first region 111 and extending to a side of the second semiconductor layer 14 facing away from the light emitting layer 13. The insulating layer 17 is provided with a first via hole and a second via hole, and the first electrode 12 is electrically connected to the first semiconductor layer 11 through the first via hole. The second electrode 15 is electrically connected to the second semiconductor layer 14 through a second via hole.

In one embodiment, the micro light emitting device 10 further includes a reflective layer 18 disposed between the second semiconductor layer 14 and the second electrode 15. The reflective layer 18 may be made of a highly reflective metal such as Ag (silver) or Al (aluminum). The light is reflected so that the light is emitted from the side of the first semiconductor layer 11 departing from the luminescent layer 13, and the luminous efficiency is improved.

[ second embodiment ]

Referring to fig. 4, a second embodiment of the present invention provides a display panel 100 including a driving substrate 20 and the micro-light emitting device 10 provided in the first embodiment, wherein the micro-light emitting device 10 is disposed on the driving substrate 20 and electrically connected to the driving substrate 20. Specifically, the micro light emitting device 10 is electrically connected to the driving substrate 20 through the first electrode 12 and the second electrode 15. The driving substrate 20 is provided with, for example, a pixel driving circuit for driving the micro light emitting device 10 to emit light. It should be noted that in the production process of the display panel 100, the substrate 16 is peeled off when the micro light emitting device 10 is transferred onto the driving substrate 20, and therefore the micro light emitting device 10 on the display panel 100 may not include the substrate 16. The present embodiment also has the effects of increasing the light emitting area and increasing the light emitting efficiency by using the micro light emitting device 10 provided in the first embodiment.

More specifically, in some embodiments, the driving substrate 20 includes a plurality of pixel units 21 thereon, each pixel unit 21 has a plurality of micro light emitting devices 10 disposed therein, each micro light emitting device 10 has a short side along the second direction, and the short sides of two adjacent micro light emitting devices 10 in each pixel unit 21 are adjacent. Fig. 4 shows one of the pixel units 21 on the driving substrate 20 within a dashed line box, and three micro-light emitting devices 10, for example, three micro-light emitting devices 10 which may be red (R), green (G) and blue (B), are disposed in the pixel unit 21, that is, one pixel unit 21 includes a plurality of color sub-pixels, and one micro-light emitting device 10 is disposed in each color sub-pixel. The short sides along the second direction, i.e. the sides with the length of the first width dimension a, are adjacent, and the short sides of two adjacent micro-light emitting devices 10 are adjacent, i.e. the sides with the length of the first width dimension a in two adjacent micro-light emitting devices 10 are adjacent.

Referring to fig. 5, in some Micro LED display screens for small angle projection or small angle display, it is necessary to reduce the light emitting angle by using one-time optical design. When the light-emitting angle is reduced or projected at an inclined angle, the positions of the three RGB chips in one pixel unit are different, and the color of the displayed image is different when the image is observed at different angles due to dispersion, which causes a problem of chromatic aberration. Referring to fig. 6, the layout of a pixel unit in a conventional Micro LED display screen is shown, where one side of the chip with the side length b ' corresponding to three color sub-pixels is on the same side, the sides with the side length a ' between adjacent chips are adjacent, the value of the gap y ' between adjacent chips is large, and the color difference is severe. With the micro-light emitting devices 10 corresponding to the adjacent sub-pixels provided in this embodiment, the sides having the first width dimension a are adjacent to each other, that is, the sides having the second width dimension b of the plurality of micro-light emitting devices 10 are on the same side, and the value of the gap y between the adjacent micro-light emitting devices 10 in one pixel unit 21 is smaller than that of y', the problem of color difference as shown in fig. 5 can be improved.

[ third embodiment ]

The third embodiment of the present invention provides a display device 200, which includes the micro-light emitting device 10 provided in the first embodiment or the display panel 100 provided in the second embodiment. Referring to fig. 7, a display device 200 using the display panel 100 according to the second embodiment is shown. The display device 200 provided in this embodiment has the same advantages as those of the first embodiment and the second embodiment, and is not described herein again.

The above description is only a preferred embodiment of the present invention, and the present invention is not limited to the above embodiments, and although the present invention has been disclosed with the preferred embodiments, it is not limited to the present invention, and any skilled person in the art can make some modifications or equivalent changes without departing from the technical scope of the present invention.

Claims

1. A micro-light emitting device (10), comprising:

a first semiconductor layer (11) including a first region (111) and a second region (112) opposing each other in a first direction on one surface of the first semiconductor layer (11);

a first electrode (12) provided in the first region (111) and electrically connected to the first semiconductor layer (11);

a light-emitting layer (13) disposed in the second region (112) and extending in a second direction perpendicular to the first direction;

a second semiconductor layer (14) which is arranged on the side of the light-emitting layer (13) facing away from the first semiconductor layer (11);

a second electrode (15) which is arranged on the side of the second semiconductor layer (14) opposite to the light-emitting layer (13) and is electrically connected with the second semiconductor layer (14);

wherein the micro-light emitting device (10) has a first width dimension along the first direction and a second width dimension along the second direction, the second width dimension being greater than or equal to the first width dimension.

2. A micro-light emitting device (10) as claimed in claim 1, characterized in that the first width dimension is in the range of 20 to 30 micrometers.

3. A micro-light emitting device (10) as recited in claim 1, wherein the difference between the second width dimension and the first width dimension is greater than or equal to 5 microns.

4. A micro-light emitting device (10) according to claim 1, further comprising a substrate (16) arranged on a side of the first semiconductor layer (11) facing away from the light emitting layer (13).

5. A micro-light emitting device (10) according to claim 1, further comprising an insulating layer (17) covering the first region (111) and extending to a side of the second semiconductor layer (14) facing away from the light emitting layer (13); a first via hole and a second via hole are formed in the insulating layer (17), and the first electrode (12) is electrically connected with the first semiconductor layer (11) through the first via hole; the second electrode (15) is electrically connected to the second semiconductor layer (14) through the second via hole.

6. A micro-light emitting device (10) according to claim 1, further comprising a reflective layer (18) disposed between the second semiconductor layer (14) and the second electrode (15).

7. A micro-light emitting device (10) according to any of claims 1 to 6, wherein the first semiconductor layer (11) is an N-type semiconductor layer and the second semiconductor layer (14) is a P-type semiconductor layer.

8. A display panel (100), comprising:

a drive substrate (20);

the micro-light emitting device (10) according to any one of claims 1 to 3 or 5 to 7, disposed on a driving substrate (20) and electrically connected to the driving substrate (20).

9. The display panel (100) of claim 8, wherein the driving substrate (20) comprises a plurality of pixel cells (21), each pixel cell (21) having a plurality of the micro light emitting devices (10) disposed therein, each micro light emitting device (10) having a short side along the second direction, the short sides of two adjacent micro light emitting devices in each pixel cell (21) being adjacent.

10. A display device (200) comprising a micro-light emitting device (10) according to any one of claims 1 to 3 or 5 to 7 or a display panel (100) according to any one of claims 8 to 9.