CN111489858B - High-temperature-resistant lead and detector using same - Google Patents
High-temperature-resistant lead and detector using same Download PDFInfo
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- CN111489858B CN111489858B CN201910073721.8A CN201910073721A CN111489858B CN 111489858 B CN111489858 B CN 111489858B CN 201910073721 A CN201910073721 A CN 201910073721A CN 111489858 B CN111489858 B CN 111489858B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
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- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B7/00—Insulated conductors or cables characterised by their form
- H01B7/17—Protection against damage caused by external factors, e.g. sheaths or armouring
- H01B7/29—Protection against damage caused by extremes of temperature or by flame
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B7/00—Insulated conductors or cables characterised by their form
- H01B7/17—Protection against damage caused by external factors, e.g. sheaths or armouring
- H01B7/28—Protection against damage caused by moisture, corrosion, chemical attack or weather
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- H—ELECTRICITY
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B7/00—Insulated conductors or cables characterised by their form
- H01B7/17—Protection against damage caused by external factors, e.g. sheaths or armouring
- H01B7/29—Protection against damage caused by extremes of temperature or by flame
- H01B7/295—Protection against damage caused by extremes of temperature or by flame using material resistant to flame
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Abstract
The invention provides a high-temperature-resistant lead which comprises a carbon nano-pipeline and a boron nitride layer, wherein the boron nitride layer is coated on the surface of the carbon nano-pipeline, the carbon nano-pipeline and the boron nitride layer are coaxially arranged, the working temperature of the high-temperature-resistant lead in the air can reach 1600K, and the working temperature in vacuum can reach 2500K. The invention also provides a detector using the high-temperature-resistant lead.
Description
Technical Field
The invention relates to a high-temperature-resistant wire and a detector using the same, in particular to a high-temperature-resistant wire adopting a composite structure of boron nitride and a carbon nano pipeline and a detector using the same.
Background
Wires capable of withstanding extremely high temperatures are very important for detecting extreme environments, such as high temperature resistant wires in solar exploration, fire field detection, high temperature material processing, aerospace and other fields. However, the existing wire is very easy to corrode and age at ultrahigh temperature (for example, more than 800K), and is difficult to normally and continuously work above 800K. And the existing high-temperature-resistant lead has large mass and is not suitable for micro equipment with strict requirements on mass and volume.
Disclosure of Invention
In view of the above, there is a need to provide a high temperature resistant wire, which is not easy to corrode and age at a high temperature of 800K or more, has substantially no decrease in conductivity, and can operate normally and continuously. And the high-temperature-resistant lead has very light weight and is suitable for micro equipment with strict requirements on weight and volume.
A high-temperature-resistant lead comprises a carbon nano-pipeline and a boron nitride layer, wherein the boron nitride layer is coated on the surface of the carbon nano-pipeline and is coaxially arranged with the carbon nano-pipeline, the working temperature of the high-temperature-resistant lead in the air can reach 1600K, and the working temperature of the high-temperature-resistant lead in vacuum can reach 2500K.
A detector comprises a processing unit, a detection unit and a high-temperature-resistant wire, wherein two ends of the high-temperature-resistant wire are respectively electrically connected with the processing unit and the detection unit, the high-temperature-resistant wire comprises a carbon nano-pipeline and a boron nitride layer, the boron nitride layer is coated on the surface of the carbon nano-pipeline, the boron nitride layer and the carbon nano-pipeline are coaxially arranged, the working temperature of the high-temperature-resistant wire in the air can reach 1600K, and the working temperature in vacuum can reach 2500K.
Compared with the prior art, the high-temperature-resistant lead provided by the invention is obtained by coating boron nitride on the surface of the carbon nano-pipeline, the carbon nano-pipeline has good conductivity, the boron nitride has good corrosion resistance, ablation resistance and insulating property, and the corrosion resistance of the carbon nano-pipeline can be improved on the basis of ensuring the conductivity of the carbon nano-pipeline by coating the boron nitride layer on the surface of the carbon nano-pipeline. And further, the working temperature of the high-temperature-resistant wire in the air can reach 1600K, and the working temperature in vacuum can reach 2500K. The high-temperature-resistant lead provided by the invention has light weight and can be suitable for micro equipment with strict requirements on weight and volume.
Drawings
Fig. 1 is a schematic cross-sectional view of a high temperature resistant wire according to an embodiment of the present invention.
Fig. 2 is a scanning electron microscope photograph of a non-twisted carbon nanotube wire according to an embodiment of the present invention.
Fig. 3 is a scanning electron microscope photograph of a rotated carbon nanotube wire according to an embodiment of the present invention.
Fig. 4 is a scanning electron microscope photograph of a cross section of a high temperature resistant wire provided by an embodiment of the present invention.
Fig. 5 is a graph showing the change of resistivity with temperature of the high temperature-resistant wire, the graphitized carbon nanotube wire and the original carbon nanotube wire according to the embodiment of the present invention.
Fig. 6 is a schematic diagram illustrating a signal transmission capability of a high temperature-resistant wire under high temperature test according to an embodiment of the present invention.
Fig. 7 is an experimental photograph of signal transmission of the high temperature resistant wire according to the embodiment of the present invention at a high temperature.
Fig. 8 is a graph showing the change of the resistance of the refractory conductor according to this embodiment in air at 1220 ℃ with time.
Fig. 9 is a graph showing the variation of thermionic emission current with temperature of the high temperature-resistant wire according to the embodiment of the present invention.
Fig. 10 is a graph showing the variation of the resistance of the high temperature-resistant wire according to the embodiment of the present invention.
Fig. 11 is a schematic structural diagram of a detector according to an embodiment of the present invention.
Description of the main elements
High temperature resistant wire 10
Boron nitride layer 14
Detailed Description
Referring to fig. 1, a high temperature resistant wire 10 is provided according to a first embodiment of the present invention. The refractory wire 10 includes a carbon nanotube wire 12 and a boron nitride layer 14. The boron nitride layer 14 is coated on the surface of the carbon nanotube wire 12, and the boron nitride layer 14 and the carbon nanotube wire 12 are coaxially disposed. The carbon nanotube wire 12 is used for conducting electricity, and the boron nitride layer 14 serves to insulate and prevent the carbon nanotube wire 12 from being oxidized and corroded. The highest temperature that this high temperature resistant wire 10 can normally work in the air can reach 1600K, and the highest temperature that can normally work in the vacuum can reach 2500K. It is understood that in some embodiments, the refractory wire 10 may also consist of only the carbon nanotube wire 12 and the boron nitride layer 14.
Preferably, the boron nitride layer 14 is a continuous boron nitride layer, and the surface of the carbon nanotube wire 12 is completely covered by the boron nitride layer 14, and no carbon nanotube wire is exposed outside.
The diameter of the high temperature resistant wire 10 is not limited, and can be adjusted correspondingly according to actual needs. Preferably, the diameter of the high temperature resistant wire 10 is in the range of 0.15-0.65 mm. More preferably, the diameter of the refractory wire 10 is in the range of 0.17-0.38 mm. The length of the high temperature resistant wire 10 can be adjusted according to actual needs. Preferably, the length of the high temperature resistant wire 10 is in the range of 15-35 mm. More preferably, the length of the refractory wire 10 is in the range of 19.5-30 mm. In this embodiment, the diameter of the high temperature-resistant wire 10 is 0.21 mm, and the length thereof is 19 mm.
The working temperature range of the high-temperature-resistant lead 10 in the air is 0-1600K. Preferably, the working temperature range of the high temperature resistant wire 10 in the air is 500-1600K. More preferably, the working temperature range of the high temperature-resistant wire 10 in the air is 800-. For example, in some embodiments, the refractory wire 10 has an operating temperature of 600K, 700K, 800K, 1000K, 1200K, 1400K, or 1500K in air. The temperature range in which the high temperature resistant wire 10 can normally work in vacuum is 0-2500K. Preferably, the working temperature range of the high-temperature-resistant wire 10 in vacuum is 800-. More preferably, the operating temperature range of the high temperature-resistant wire 10 in vacuum is 1200-2000K. For example, in some embodiments, the refractory wire 10 operates at 900K, 1000K, 1400K, 1600K, 1800K, or 1900K in vacuum.
The carbon nanotube wire 12 includes a plurality of carbon nanotubes connected end to end by van der waals force to form a macroscopic linear structure. The carbon nanotubes in the carbon nanotube wire 12 are pure carbon nanotubes, which means that the carbon nanotubes are not modified physically or chemically, and the carbon nanotubes substantially do not contain impurities. The carbon nanotube wire 12 has good flexibility and electrical conductivity, the carbon nanotube wire 12 can be heated to incandescence in vacuum, and the carbon nanotube wire 12 can be used as a wire at high temperature. It is understood that in certain embodiments, the carbon nanotube wire 12 is comprised of only a plurality of carbon nanotubes.
The carbon nanotube wire 12 may be a non-twisted carbon nanotube wire or a twisted carbon nanotube wire.
Specifically, referring to fig. 2, the untwisted carbon nanotube wire may include a plurality of carbon nanotubes extending along an axial direction of the untwisted carbon nanotube wire. The untwisted carbon nanotube wire can be obtained by processing the carbon nanotube film by an organic solvent. Specifically, the carbon nanotube drawn film is obtained by drawing from a super-ordered carbon nanotube array along a direction perpendicular to the growth direction of carbon nanotubes, and comprises a plurality of carbon nanotube segments, wherein the carbon nanotube segments are connected end to end through van der waals force, and each carbon nanotube segment comprises a plurality of carbon nanotubes which are parallel to each other and are tightly combined through van der waals force. The carbon nanotube segments have any length, thickness, uniformity, and shape. Specifically, the entire surface of the drawn carbon nanotube film may be wetted with a volatile organic solvent, and under the action of a surface tension generated when the volatile organic solvent is volatilized, a plurality of carbon nanotubes parallel to each other in the drawn carbon nanotube film are tightly bonded by van der waals force, so that the drawn carbon nanotube film is shrunk into a non-twisted carbon nanotube wire. The volatile organic solvent is ethanol, methanol, acetone, dichloroethane or chloroform. The non-twisted carbon nanotube wires treated with the volatile organic solvent have a reduced specific surface area and a reduced viscosity as compared to a carbon nanotube film not treated with the volatile organic solvent.
Referring to fig. 3, the twisted carbon nanotube wire includes a plurality of carbon nanotubes spirally extending around the axial direction of the twisted carbon nanotube wire. The twisted carbon nanotube wire can be obtained by twisting the two ends of the carbon nanotube film in opposite directions by using a mechanical force. Further, the twisted carbon nanotube wire may be treated with a volatile organic solvent. Under the action of surface tension generated when the volatile organic solvent is volatilized, adjacent carbon nanotubes in the processed twisted carbon nanotube wire are tightly combined through van der waals force, so that the specific surface area of the twisted carbon nanotube wire is reduced, and the density and the strength are increased.
Please refer to the chinese patent with publication number CN100411979C, which was applied by fangeshan et al on 16/9/2002 and published on 20/8/2008; and chinese patent No. CN100500556C, applied on 16/12/2005, published on 17/6/2009.
The diameter of the carbon nanotube wire 12 can be selected according to actual needs. Preferably, the diameter of the carbon nanotube wire 12 ranges from 0.05 to 0.25 mm. If the diameter of the carbon nanotube wire 12 is too large (for example, greater than 0.25 mm), the heat generation of the wire is increased during the use process, the overload performance of the wire is affected during the use process, and the quality of the wire is increased; if the diameter of the carbon nanotube wire 12 is too small (e.g., less than 0.05 mm), it may cause too little current to flow through the wire, which may affect the conductivity properties. More preferably, the carbon nanotube wire 12 has a diameter ranging from 0.07 to 0.12 mm.
In this embodiment, the carbon nanotube wire 12 is a twisted carbon nanotube wire, and the diameter of the carbon nanotube wire 12 is 0.10 mm and the length thereof is 19 mm.
The type of boron nitride layer 14 is not limited and may be hexagonal boron nitride (H-BN), rhombohedral boron nitride (R-BN), cubic boron nitride (C-BN), or wurtzite boron nitride (W-BN). In this embodiment, the boron nitride layer 14 is an H-BN layer. The H-BN layer may be deposited on the surface of the carbon nanotube wire 12 by a chemical vapor deposition method. Specifically, at a high temperature and a low pressure, boron trichloride and ammonia gas are introduced into the reaction furnace for a certain time, and an H-BN layer is formed on the surface of the carbon nanotube wire 12. Because H-BN has super strong covalent bond, large band gap and layered structure, the H-BN material has good corrosion resistance, ablation resistance and insulativity at high temperature. In addition, the H-BN has the advantages of light weight, chemical inertness, good mechanical property, high thermal conductivity and high temperature stability, and the H-BN has good compatibility with the carbon nano tube, so that the high temperature resistant lead 10 obtained by coating the H-BN on the surface of the carbon nano tube 12 is not easy to be oxidized and ablated when working at high temperature, and has good thermal stability.
The boron nitride layer 14 preferably has a thickness of 0.05-0.20 mm. More preferably, the boron nitride layer 14 has a thickness of 0.07 to 0.14 millimeters. In this embodiment, the boron nitride layer 14 is an H-BN layer, the thickness of the H-BN layer is 0.055 mm, and the H-BN layer is formed by introducing boron trichloride and ammonia gas into the reaction furnace at 1500 ℃ and under low pressure for about 40 minutes and growing on the surface of the carbon nanotube wire 12.
Please refer to fig. 4, which is a scanning electron microscope photograph of a cross section of the high temperature resistant wire formed by coating the H-BN layer on the surface of the carbon nanotube wire in this embodiment, it can be seen from the figure that the H-BN layer and the carbon nanotube wire are coaxially disposed, and the H-BN layer is uniformly coated on the surface of the carbon nanotube wire.
Referring to fig. 5, a curve showing the change of the resistivity of the high temperature resistant wire formed by coating the H-BN layer on the surface of the carbon nanotube wire with the temperature in the present embodiment is shown, and a comparison is made between the change of the resistivity of the graphitized carbon nanotube wire and the change of the resistivity of the original carbon nanotube wire with the temperature; the diameters and lengths of the carbon nanotube wire in the high temperature resistant wire, the graphitized carbon nanotube wire and the original carbon nanotube wire are the same. The graphitized carbon nanotube wire means that the carbon nanotube in the carbon nanotube wire in the present embodiment is completely graphitized, and the original carbon nanotube wire means the carbon nanotube wire before depositing the boron nitride in the present embodiment. As can be seen from the figure, the change curve of the resistivity of the high temperature resistant wire according to the present embodiment with the temperature is substantially consistent with the change curve of the resistivity of the graphitized carbon nanotube wire with the temperature in the temperature range of 1000K to 2000K. But the resistivity of the original carbon nanotube wire decreases with increasing temperature at 1200K to 1600K and increases with increasing temperature at 1600K to 2000K. It can also be seen that the resistivity of the refractory conductor in this embodiment is lower than that of the original carbon nanotube wire at the same temperature. Therefore, in the high-temperature-resistant lead in the embodiment, in the process of growing H-BN on the surface of the carbon nanotube, partial carbon nanotubes are graphitized, and the conductivity of the carbon nanotube is further improved.
Fig. 6 is a schematic diagram illustrating a signal transmission capability of a high temperature resistant wire formed by coating an H-BN layer on a surface of a carbon nanotube wire at a high temperature in the present embodiment. Two ends of the high-temperature-resistant wire are respectively connected with the CCD camera and the LCD, and the high-temperature-resistant wire is burnt by adopting liquefied petroleum gas flame. Referring to fig. 7, when the burning temperature reaches 1200 ℃, the high temperature-resistant wires can normally transmit video signals. Referring to fig. 8, it can be seen that the high temperature resistant wire of the present embodiment is maintained in the air at 1220 ℃ for 20min, and the resistance of the high temperature resistant wire is stable and substantially unchanged. Fig. 6-8 illustrate that the high temperature resistant wire provided by the present embodiment has better conductivity at a high temperature of about 1200 ℃.
Referring to fig. 9, a Keithley2200 source table was used to apply a voltage to the refractory wire of this embodiment to heat the refractory wire, and a metal foil was attached to another source table Keithley237, the metal foil being used to collect thermionic emitted electrons that passed through the boron nitride layer. As can be seen from FIG. 9, the thermionic emission current of the refractory wire is only 10 when the temperature reaches 1600K-7A. The heat conduction from the external H-BN layer to the external metal foil is very small at high temperature, the heat loss of the high-temperature-resistant wire is small, and the effective thermal conductivity of the high-temperature-resistant wire is high. Referring to fig. 10, a carbon nanotube film is coated on the outer surface of the high temperature-resistant wire in this embodiment as a probe electrode, and the resistance of the high temperature-resistant wire is tested to vary with the reciprocal of the temperature. As can be seen from the figure, the resistance L of the high temperature resistant wiren(R) increases linearly with the increase of 1/T, and when the temperature is 1302K, the resistance of the high-temperature resistant lead is 6.7 multiplied by 108Omega. This indicates that the H-BN layer maintains good insulating properties even at high temperatures.
Referring to fig. 11, a second embodiment of the present invention further provides a probe 20 using the above-mentioned high temperature-resistant wire 10. The detector 20 includes a processing unit, a detecting unit and the high temperature-resistant conducting wire 10 in the first embodiment, and both ends of the high temperature-resistant conducting wire 10 are electrically connected to the processing unit and the detecting unit, respectively.
The processing unit is selected according to actual needs, and can be a processor containing a processing module, and the like. The processing signal of the processing unit can be output through an output unit. The output unit can be a display, an alarm and the like. In this embodiment, the output unit is an LCD display.
The detection unit is selected according to actual needs and can be a thermosensitive probe, a photosensitive probe, a gas-sensitive probe, a force-sensitive probe, a magnetic-sensitive probe, a humidity-sensitive probe, a sound-sensitive probe, a radioactive ray-sensitive probe, a color-sensitive probe, a taste-sensitive probe, a video probe and the like. In this embodiment, the detecting unit is a CCD camera.
The detector 20 may further include a power source. The power supply can be supplied by a direct current power supply, an alternating current power supply, a battery and the like.
In this embodiment, when the detector 20 is used, the power supply is turned on, and the detection unit collects information of a detection site in real time, such as temperature, image, and the like; the information collected by the detection unit is transmitted to the processing unit through a high-temperature-resistant wire, and the processing unit processes the information to obtain a processing signal, for example, the processing signal is converted into a numerical signal and the like; finally, the processed signal is output to an output unit through a high-temperature-resistant wire, for example, to a display for display.
The detector 20 can be used in high temperature environments with temperatures in excess of 1000 ℃, such as pake solar detectors, solar prospecting, fire field detection, high temperature material processing, aerospace, and the like.
The high-temperature-resistant lead provided by the invention coats boron nitride on the surface of the carbon nano-tube, the carbon nano-tube has good conductivity, flexibility and strength, and can be applied to extremely severe environments such as high temperature, but the carbon nano-tube is easily oxidized at the temperature of more than 500 ℃. Boron nitride has super strong covalent bond, large band gap and layered structure, and has good corrosion resistance, ablation resistance and insulating property. Therefore, the high-temperature-resistant wire is obtained by coating boron nitride on the surface of the carbon nano pipeline, and the corrosion resistance of the high-temperature-resistant wire can be improved on the basis of ensuring the conductivity of the high-temperature-resistant wire. And further, the normal working temperature of the high-temperature-resistant wire in the air can reach more than 1600K, and the normal working temperature in vacuum can reach more than 2500K. Therefore, the application field of the carbon nano tube wire is greatly expanded. The high-temperature-resistant lead provided by the invention has light weight, is beneficial to actual operation, and can be suitable for micro equipment with strict requirements on mass and volume. In addition, boron nitride maintains good insulating properties at high temperatures.
In addition, other modifications within the spirit of the invention may occur to those skilled in the art, and such modifications within the spirit of the invention are intended to be included within the scope of the invention as claimed.
Claims (8)
1. A high-temperature-resistant lead is characterized by comprising a carbon nano-pipeline and a boron nitride layer, wherein the boron nitride layer is coated on the surface of the carbon nano-pipeline and is in direct contact with the carbon nano-pipeline, the boron nitride layer and the carbon nano-pipeline are coaxially arranged, the working temperature of the high-temperature-resistant lead in the air can reach 1600K, the working temperature in vacuum can reach 2500K, the carbon nano-pipeline comprises a plurality of carbon nano-tubes, the carbon nano-tubes are connected end to end through Van der Waals force to form a macroscopic linear structure, the diameter range of the carbon nano-pipeline is 0.05-0.25 mm, and part of the carbon nano-tubes in the carbon nano-pipeline are graphitized.
2. The high-temperature-resistant wire as claimed in claim 1, wherein the working temperature range of the high-temperature-resistant wire in air is 500-1600K.
3. The high-temperature-resistant wire as claimed in claim 1, wherein the working temperature range of the high-temperature-resistant wire in vacuum is 800-2200K.
4. The refractory wire of claim 1, wherein the carbon nanotube wire is a twisted carbon nanotube wire comprising a plurality of carbon nanotubes helically extending axially around the twisted carbon nanotube wire.
5. The refractory wire of claim 1, wherein the boron nitride layer is a hexagonal boron nitride layer.
6. The refractory wire of claim 1, wherein the boron nitride layer has a thickness of 0.05 mm to 0.20 mm.
7. The refractory wire of claim 1, wherein the boron nitride layer is a continuous boron nitride layer, and the surface of the carbon nanotube wire is completely covered by the continuous boron nitride layer.
8. A detector comprising a processing unit, a detecting unit and a high temperature resistant wire, both ends of the high temperature resistant wire being electrically connected with the processing unit and the detecting unit, respectively, characterized in that the high temperature resistant wire is selected from the high temperature resistant wires according to any one of claims 1 to 7.
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| CN201910073721.8A CN111489858B (en) | 2019-01-25 | 2019-01-25 | High-temperature-resistant lead and detector using same |
| TW108105004A TWI730293B (en) | 2019-01-25 | 2019-02-14 | High temperature resistant wire and detector using the same |
| US16/448,104 US11527336B2 (en) | 2019-01-25 | 2019-06-21 | High temperature resistant wire and detector using the same |
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| US11527336B2 (en) | 2022-12-13 |
| TW202044284A (en) | 2020-12-01 |
| CN111489858A (en) | 2020-08-04 |
| US20200243214A1 (en) | 2020-07-30 |
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