CN111485199B - Side wall coating film system of micro wafer camera module and processing technology thereof - Google Patents

Side wall coating film system of micro wafer camera module and processing technology thereof Download PDF

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Publication number
CN111485199B
CN111485199B CN202010295655.1A CN202010295655A CN111485199B CN 111485199 B CN111485199 B CN 111485199B CN 202010295655 A CN202010295655 A CN 202010295655A CN 111485199 B CN111485199 B CN 111485199B
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coating
camera module
coating film
wafer camera
side wall
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CN111485199A (en
Inventor
吴岳
葛文志
王刚
余开封
徐宝利
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Zhejiang Meidikai Optical Semiconductor Co ltd
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Zhejiang Meidikai Optical Semiconductor Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/26—Processes for applying liquids or other fluent materials performed by applying the liquid or other fluent material from an outlet device in contact with, or almost in contact with, the surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • B05D3/061—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation using U.V.
    • B05D3/065—After-treatment
    • B05D3/067—Curing or cross-linking the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

The invention relates to the technical field of micro wafer camera module coating. The invention discloses a side wall coating film system of a miniature wafer camera module, which comprises four layers of coatings, wherein a SiO2 base layer, a Nb coating, a Si coating and a SiO2 coating are sequentially arranged from inside to outside, the spectrum at the outer side of a black coating film is 400-plus 900nm, the optical density is not less than 5, the maximum transmittance is not more than 0.05 percent, the maximum reflectivity is not more than 50 percent, the spectrum at the inner side of the black coating film is 400-plus 900nm, and the maximum reflectivity is not more than 25 percent. The invention also discloses a processing technology of the film coating system, which combines the technologies of dispensing, sputtering film coating and the like. The invention effectively solves the problem that the side wall of the minimum module can not be shaded by using the traditional plastic forming Holder, and achieves the purposes of thin thickness and strong film firmness under the optical condition that the side wall is completely lightproof.

Description

Side wall coating film system of micro wafer camera module and processing technology thereof
Technical Field
The invention relates to the technical field of micro wafer camera module coating, in particular to a micro wafer camera module side wall coating film system and a processing technology thereof.
Background
The Wafer-Level camera module is produced in batch by adopting a Wafer bonding process based on CSP (Chip Scale Package) packaging and WLO (Wafer Level Optics) technical bases of CIS (CMOS Image Sensor). The wafer level camera module is the standardized development direction of camera modules and represents the most advanced manufacturing technology of camera modules. The wafer level camera module has the characteristics of high temperature resistance, small size, low height and the like, and is particularly suitable for ultrathin products. By adopting a multi-lens stacking technology, the wafer-level camera module can realize a subminiature high-pixel module, which is the direction of standardization of the future camera module.
The size of the module in the existing wafer-level camera module industry is generally more than 3mm 2mm, a plastic Holder mold forming process can be adopted for the module with the size, the wafer-level camera modules are overlapped and attached to a CSP Image Sensor, and then a plastic Holder is covered on the module to play a role in shading. When the size of the wafer-level camera module is further reduced to 2.5mm 1mm module, the size of the holder is too small, the deformation of the traditional injection molding process is very easy to cause during demoulding, and the proper holder cannot be formed. If the ink spraying process is adopted to spray the module with black on four sides, the spraying range is large due to the extremely small size of the module, and the circuit function failure caused by the pollution of the ink on the circuit layer at the bottom of the module or the imaging effect influenced by the pollution to the light through hole surface can be caused. In addition, the firmness of the spraying process is difficult to meet the requirements of a plurality of subsequent processing processes. In summary, the conventional method cannot shield the WLC very small module sidewall.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides a film system for coating the side wall of a miniature wafer camera module, which effectively solves the problem that the side wall of a miniature module cannot be shaded by using a traditional plastic forming Holder and achieves the effects of thin thickness and strong film firmness under the optical condition that the side wall is completely lightproof.
(II) technical scheme
In order to achieve the purpose, the invention provides the following technical scheme: a side wall coating film system of a miniature wafer camera module is a black coating film and comprises four layers of coatings, wherein a SiO2 base layer, a Nb coating, a Si coating and a SiO2 coating are sequentially arranged from inside to outside, when the spectrum of the outer side of the black coating film is 400-plus-900 nm, the optical density is not less than 5, the maximum transmittance is not more than 0.05 percent, the maximum reflectance is not more than 50 percent, and when the spectrum of the inner side of the black coating film is 400-plus-900 nm, the maximum reflectance is not more than 25 percent.
Further, the thickness of the SiO2 basic layer is 20-40 nm.
Further, the total thickness of the four-layer coating is 2600-2700 nm.
Preferably, the total thickness of the four-layer coating is 2650 nm.
The production process of the side wall film coating system of the miniature wafer camera module comprises the following steps:
1) adhering a double-sided high-temperature adhesive tape to the upper surface of the micro wafer camera module where the light through hole is located;
2) dispensing glue on the lower surface of the circuit of the miniature wafer camera module;
3) UV curing;
4) plasma cleaning;
5) sputtering a coating film;
6) and (5) degumming.
Further, the dispensing in step 2) includes the following steps:
31) adopting positive pressure to press the glue out to the needle head;
32) the height of the glue pin is reduced to enable the glue to be in contact with the tin solder ball;
33) the glue will spread out and cover the bottom;
34) negative pressure is used to return the needle to the initial position.
Further, in the step 2), a water-soluble UV curing adhesive Three Bond TD3046 with a diameter of 0.3mm is used for dispensing.
(III) advantageous effects
Compared with the prior art, the invention provides a side wall coating film system of a miniature wafer camera module and a processing technology thereof, and the side wall coating film system has the following beneficial effects:
the problem that the side wall of the minimum module cannot be shaded by using a traditional plastic forming Holder is effectively solved, and the effects that the thickness is thin, the firmness of a film layer is strong, and the processing process flow is simple under the optical condition that the side wall is completely lighttight are achieved.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention.
FIG. 2 is a process flow diagram of the present invention.
In the figure: the 1 SiO2 base layer, the 2 Nb coating, the 3 Si coating, the 4 SiO2 coating and the 5 are miniature wafer camera modules.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, a side wall coating film system of a micro wafer camera module is a black coating film, and comprises four layers of coatings, which are sequentially a SiO2 base layer, a Nb coating, a Si coating, and a SiO2 coating from inside to outside, wherein the spectrum of the outer side of the black coating film is 400-900nm, the optical density is not less than 5, the maximum transmittance is not more than 0.05%, the maximum reflectance is not more than 50%, the spectrum of the inner side of the black coating film is 400-900nm, and the maximum reflectance is not more than 25%. Wherein the thickness of the SiO2 basic layer is 20-40 nm. The total thickness of the four-layer coating is 2600-. The total thickness of the four-layer coating is 2650nm with the best effect.
The production process of the side wall film coating system of the miniature wafer camera module comprises the following steps:
1) adhering a double-sided high-temperature adhesive tape to the upper surface of the micro wafer camera module where the light through hole is located;
2) the method comprises the following steps of (1) carrying out glue dispensing on the lower surface of a circuit of a miniature wafer camera module by using a water-soluble UV curing glue Three Bond TD3046 and a glue needle with the diameter of 0.3mm, firstly extruding the glue to the position of a needle head by using positive pressure, then reducing the height of the glue needle to enable the glue to be in contact with a tin solder ball, then spreading the glue out and covering the bottom of the needle head, and finally returning the needle head to the initial position by using negative pressure;
3) UV curing;
4) plasma cleaning;
5) sputtering a coating film;
6) and (5) degumming.
Fig. 2 is a process flow diagram of the process.
Because the spectral characteristic of the side wall coating film of the miniature wafer camera module directly determines the actual imaging effect of the module, the most important performance of the whole module is directly influenced. The film system design is mainly considered from the following four points.
First, the lower the transmittance of the film layer in the full-spectrum full-band (400-1100 nm), the better. If the rete transmissivity is high, will directly lead to the same external light of light leak to shine the rete outside and will directly penetrate to sensor surface imaging after external object reflected light gets into the module, it can lead to the formation of image fuzzy.
Second, the reflectivity of the inner sidewall of the film in the required spectral (400-900 nm) band needs to be as low as possible. After the module receives the reflected light of an external object, the reflected light of the module irradiates the inner side wall through reflection and refraction of the lens. If inside wall reflectivity is higher, above light can reach the sensor surface through the camera lens through inside wall reflection then to thereby lead to the same formation of image of the light that does not need to lead to module image Flare scheduling problem. The above two points are mainly considered from the optical performance.
Thirdly, considering the requirement of the film firmness of the side wall of the miniature wafer camera module, the WLC module is cut into single pieces by adopting a cutter wheel, and the surface condition of the side wall of the WLC module is very rough. The Rz of the film reaches 0.6um, and the thickness of the film is designed to exceed the Rz value because the film is scratched and light leakage occurs if the film thickness is too thin due to the fact that a jig or a tool in the rear end processing procedure is in hard contact with the side wall.
Fourthly, also considering the firmness of the side wall film layer of the miniature wafer camera module, the miniature wafer camera module is mainly made of silicate because the main body of the miniature wafer camera module is made of optical glass-like materials. In order to increase the film firmness, a layer of SiO2 with the thickness of 20nm-40nm is designed at the bottom layer of the coating film to be used as a connecting layer. Considering the requirement that the inner and outer walls of the film layer are opaque in the visible light region of the incident light, the material of the film layer is mainly selected from Si, Nb and SiO2, and the thickness is designed to be 2650nm as the best.
Because the upper surface of the miniature wafer camera module is a plane, the surface of the light through hole is protected by adopting a high-temperature double-sided adhesive tape to prevent the overflow plating to the surface during film coating. The lower surface presents a concave-convex condition due to the existence of 100um Solder ball, and the surface cannot be protected by using the adhesive tape for adhesion without a gap. And selecting a UV glue curing glue which is easily dissolved in water through internal verification, and carrying out glue dispensing and curing on the surface to protect the surface. After the coating process, the film layer covers the surface of the glue layer, and then the glue layer is soaked in water to remove the solidified glue, so that good protection can be achieved. For the coating process, vacuum sputtering is also adopted for coating in consideration of film firmness.
The process flow design experiment of the miniature wafer camera module side wall film coating film system with pertinence combined with actual conditions finally achieves simple and reasonable process route, greatly improves production stability and perfectly completes the miniature wafer camera module side wall film coating. The shading performance after coating is superior to that of the existing plastic Holder die forming process and ink spraying process for the wafer camera module with common size.

Claims (8)

1. A film coating system for the side wall of a miniature wafer camera module is a black film coating and is characterized by comprising four layers of coatings which are sequentially SiO from inside to outside2Base layer, Nb coating, Si coating, SiO2The coating layer, the optical density is not less than 5 when the spectrum at the outer side of the black coating film is 400-900nm, the maximum transmittance is not more than 0.05 percent, the maximum reflectivity is not more than 50 percent, and the maximum reflectivity is not more than 25 percent when the spectrum at the inner side of the black coating film is 400-900 nm.
2. The micro wafer camera module sidewall coating film system of claim 1,
the SiO2The thickness of the base layer is 20-40 nm.
3. The micro wafer camera module sidewall coating film system of claim 1,
the total thickness of the four-layer coating is 2600-.
4. The micro wafer camera module sidewall coating film system of claim 3,
the total thickness of the four-layer coating was 2650 nm.
5. The process for manufacturing the side wall coating film system of the micro wafer camera module set according to any one of claims 1 to 4, comprising the following steps:
1) adhering a double-sided high-temperature adhesive tape to the upper surface of the micro wafer camera module where the light through hole is located;
2) dispensing glue on the lower surface of the circuit of the miniature wafer camera module;
3) UV curing;
4) plasma cleaning;
5) sputtering a coating film;
6) and (5) degumming.
6. The process for processing the sidewall coating film system of the micro wafer camera module set as claimed in claim 5, wherein the dispensing in step 2) comprises the following steps:
31) adopting positive pressure to press the glue out to the needle head;
32) the height of the glue pin is reduced to enable the glue to be in contact with the tin solder ball;
33) the glue will spread out and cover the bottom;
34) negative pressure is used to return the needle to the initial position.
7. The process for processing the sidewall coating film system of the miniature wafer camera module set as claimed in claim 5, wherein step 3) adopts a water soluble UV curable adhesive Three Bond TD 3046.
8. The process of claim 5, wherein the step 2) comprises dispensing with a 0.3mm diameter glue needle.
CN202010295655.1A 2020-04-15 2020-04-15 Side wall coating film system of micro wafer camera module and processing technology thereof Active CN111485199B (en)

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