CN114669963B - Manufacturing process of periscopic camera module shell - Google Patents

Manufacturing process of periscopic camera module shell Download PDF

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Publication number
CN114669963B
CN114669963B CN202210304552.6A CN202210304552A CN114669963B CN 114669963 B CN114669963 B CN 114669963B CN 202210304552 A CN202210304552 A CN 202210304552A CN 114669963 B CN114669963 B CN 114669963B
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coating
camera module
light
periscopic camera
film layer
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CN114669963A (en
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席龙龙
席冬冬
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Guangdong Yupin Industrial Co ltd
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Guangdong Yupin Industrial Co ltd
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23PMETAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
    • B23P15/00Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10Glass or silica
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/16Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/02Local etching
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/28Acidic compositions for etching iron group metals

Abstract

The invention belongs to the technical field of camera modules, and particularly relates to a manufacturing process of a periscopic camera module shell, which at least comprises the following steps: etching, namely placing the base material subjected to film coating, exposure and development treatment in an etching solution for etching treatment to obtain a substrate with a light through hole, wherein a chamfer structure is formed at the inner side edge of the light through hole; coating, namely coating an absorption film layer on the substrate by adopting a plasma sputtering coating process, and in the coating process, shielding a non-coating area by using a jig so that the absorption film layer is attached to both the coating area and the chamfer structure; bending, namely performing stamping and bending operation on the coated substrate to obtain a shell frame; and performing laser welding on the shell frame obtained in the third step to obtain the required shell. Compared with the prior art, the invention can reduce the reflection of light to the maximum extent through the light-transmitting hole under the double effects of reducing the reflection area and reducing the reflectivity, thereby inhibiting the generation of stray light, and the thickness of the film layer is small and controllable, thereby improving the image quality and the definition of the camera.

Description

Manufacturing process of periscopic camera module shell
Technical Field
The invention belongs to the technical field of camera modules, and particularly relates to a manufacturing process of a periscopic camera module shell.
Background
At present, terminal equipment with a camera shooting function becomes an indispensable electronic product in work and life of people, such as a smart phone, a tablet computer and the like. The increasing demand for cameras, such as smart phones and tablet computers, makes the cameras become one of the important core components of smart phones and tablet computers.
The periscopic camera is a camera with a special structure designed for shooting a long-distance object, has the main characteristics of long focal length and small visual angle, can realize clear shooting for a long-distance target, generally comprises a camera component and a reflector, and external natural light is reflected by the reflector and then forms an image on the camera component. The camera assembly requires a housing assembly including a large light hole. In order to reduce the reflectivity of the light through holes and the internal blackening, the prior art generally prints black through a silk-screen process, but the reflectivity of the shell in the prior art in a 400-800nm optical band is high and generally can only reach less than or equal to 2%, and more stray light exists, so that the image quality and the definition of the camera cannot meet the higher and higher requirements of people, and the user experience is influenced.
In view of the above, the present invention is directed to a manufacturing process of a periscopic camera module housing, which includes etching a chamfer at an edge of a light through hole, simultaneously performing a coating process, and performing a stamping, bending and welding to obtain the periscopic camera module housing, wherein the periscopic camera module housing is formed by reducing reflection area and reflectivity, so as to minimize reflection of light at the light through hole, thereby suppressing generation of stray light, and has a small and controllable film thickness, thereby improving image quality and definition of a camera.
Disclosure of Invention
The invention aims to: aiming at the defects of the prior art, the periscopic camera module shell manufacturing process is provided, firstly, a chamfer is etched on the edge of a light through hole, meanwhile, a film coating process is adopted for film coating, and then, the periscopic camera module shell is obtained through stamping, bending and welding.
In order to achieve the purpose, the invention adopts the following technical scheme:
a manufacturing process of a periscopic camera module shell at least comprises the following steps:
firstly, etching, namely placing a base material subjected to film coating, exposure and development treatment in etching solution for etching treatment to obtain a substrate with a light through hole, wherein a chamfer structure is formed at the inner side edge of the light through hole;
secondly, coating, namely coating an absorption film layer on the substrate obtained in the first step by adopting a plasma sputtering coating process, and in the coating process, shielding an uncoated area by using a jig so that the absorption film layer is attached to both the coated area and the chamfer structure;
thirdly, bending, namely performing stamping and bending operation on the coated substrate to obtain a shell frame;
and fourthly, performing laser welding on the shell frame obtained in the third step to obtain the required shell.
As an improvement of the manufacturing process of the periscopic camera module shell, in the first step, the etching solution is a mixed solution of ferric trichloride and hydrochloric acid, wherein the concentration of the ferric trichloride is 40% -60%; the concentration of the hydrochloric acid is 10-20%.
As an improvement of the manufacturing process of the periscopic camera module shell, the temperature of etching treatment in the first step is 40-50 ℃, the baume degree of the etching solution is 40-42, and the movement speed of the base material is 1.5-2 m/min.
As an improvement of the manufacturing process of the periscopic camera module shell, the base material is made of stainless steel or copper alloy, and the thickness of the base material is 0.02-0.3mm.
As an improvement of the manufacturing process of the periscopic camera module shell, the chamfer structure is arc-shaped and inclined, and the inner side edge of the chamfer structure is in a sharp angle shape.
As an improvement of the manufacturing process of the periscopic camera module shell, the angle of the sharp corner is less than 30 degrees.
As an improvement of the manufacturing process of the periscopic camera module shell, the inner side surface of the light through hole is in a sawtooth shape.
As an improvement of the manufacturing process of the periscopic camera module shell, the absorption film layers are Ti layers and silicon dioxide layers which are alternately arranged from inside to outside.
As an improvement of the manufacturing process of the periscopic camera module shell, the plasma sputteringThe specific conditions of the sputtering coating process are as follows: the temperature is 70-80 ℃, the vacuum degree is 2.0e-3torr to 3.0e-3torr, the sputtering rate of Ti is 0.1-0.2 nm/s, and the sputtering rate of silicon dioxide is 0.3-0.7 nm/s. The absorption film layer is formed by plasma sputtering coating in high vacuum environment and is composed of Ti and SiO 2 Are alternately generated due to Ti and SiO 2 The film layer formed by adopting the plasma sputtering coating has better density and hardness, so that the scratch resistance of the coated shell is enhanced, and the reflectivity is reduced. The plasma sputtering coating is characterized in that the material is deposited in a molecular mode, and the coating thickness is thin (the total thickness is less than 1 mu m), so that the surface accuracy of the part cannot be damaged. Through the optimized combination of each layer thickness, the film layer structure has stronger surface hardness and simultaneously has better antireflection effect.
As an improvement of the manufacturing process of the periscopic camera module shell, the total thickness of the absorption film layer is less than 500nm, the reflectivity is less than or equal to 0.3% within the wavelength range of 400-800nm, the total thickness of the absorption film layer is less than 500nm, and the reflectivity is less than or equal to 0.3% within the wavelength range of 400-800 nm; the thickness ratio of the Ti layer to the silicon dioxide layer is (0.5-5): 1.
compared with the prior art, the substrate with the light through hole is obtained through an etching process, the chamfer structure is formed on the edge of the inner side of the light through hole, the absorption film layer is arranged at the chamfer structure through the coating film, reflection of light of the light through hole can be reduced to the maximum degree under the double effects of reducing the reflection area and reducing the reflectivity, accordingly, generation of stray light is inhibited, the thickness of the film layer is small and controllable, and accordingly, image quality and definition of a camera are improved. And the absorbing film layer plated by adopting the plasma sputtering coating process replaces the existing silk-screen black printing process, so that the absorbing film layer with low reflectivity and stable film layer Lab value can be obtained. The jig is used for shielding the non-coating area in the coating process, so that the position accuracy of the coating area can be guaranteed, the punching bending can form a good bending shape, the laser welding without solder can ensure that the welding part is not light-tight, and the structure is reliable and attractive.
Drawings
FIG. 1 is a schematic view of the structure of a substrate (multiple substrates connected) after the first step of the present invention.
Fig. 2 is a schematic front view of a single substrate after the first step of the present invention.
Fig. 3 is a front view of the welded housing structure of the present invention.
Fig. 4 is a side view of the welded housing structure of the present invention.
Fig. 5 is an enlarged view of a portion a in fig. 4.
Fig. 6 is one of perspective views of a welded housing structure of the present invention.
Fig. 7 is a second perspective view of the welded housing structure of the present invention.
Fig. 8 is a rear view of the welded housing structure of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all the directional indicators (such as upper, lower, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the motion situation, etc. in a specific gesture (as shown in the drawing), and if the specific gesture changes, the directional indicator changes accordingly.
In addition, the descriptions related to "first", "second", etc. in the present invention are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions in the embodiments may be combined with each other, but it must be based on the realization of the technical solutions by those skilled in the art, and when the technical solutions are contradictory to each other or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
As shown in fig. 1 to 8, the present invention provides a manufacturing process of a periscopic camera module housing, which at least comprises the following steps:
firstly, etching, namely placing a base material subjected to film coating, exposure and development treatment in an etching solution for etching treatment to obtain a substrate 2 with a light through hole 1, wherein a chamfer structure 3 is formed at the inner side edge of the light through hole 1; the coating, exposure, and development processes can protect areas not to be etched from etching.
Secondly, coating, namely coating an absorption film layer 5 on the substrate 2 obtained in the first step by adopting a plasma sputtering coating process, and in the coating process, shielding a non-coating area by using a jig so as to ensure the position accuracy of the coating area, so that the absorption film layer 5 is attached to both the coating area and the chamfering structure 3; the reflectivity of the absorption film layer prepared by adopting the plasma sputtering coating process is less than or equal to 0.3 percent (within the wavelength range of 400-800 nm), the Lab value is stable, the film thickness is less than or equal to 500nm, and the light reflectivity can be reduced when the absorption film layer 5 is attached to the chamfer structure 3.
Thirdly, bending, namely performing stamping and bending operation on the coated substrate 2 to form a good bending shape to obtain a shell frame;
and fourthly, performing laser welding on the shell frame obtained in the third step, wherein the welding position is not light-tight, the structure is reliable and attractive, the required shell is obtained, and then the shell is placed in a special packaging box to effectively protect the shell.
Wherein, the etching solution in the first step is a mixed solution of ferric trichloride and hydrochloric acid, wherein the concentration of the ferric trichloride is 40-60%; the concentration of the hydrochloric acid is 10-20%.
In the first step, the etching treatment temperature is 40-50 ℃, the Baume degree of the etching solution is 40-42, and the movement speed of the base material is 1.5-2 m/min. The etching solution can etch the light through hole 1 with the chamfer structure 3 well.
The base material is stainless steel or copper alloy, and the thickness of the base material is 0.02-0.3mm.
Chamfer structure 3 is the arc slope form, can reduce the inside light that the reflection got into the shell cavity, and chamfer structure 3's inboard edge is the closed angle shape, and this structure light reflection area is little. The angle of the pointed angle is less than 30 degrees. The chamfer structure 3 is arranged to reduce the quantity of the reflecting section by 80 percent on average, and the quantity of the reflecting light of the section is reduced by 97.5 percent by taking a base material with the thickness of 0.2mm as an example; the chamfer slope physics reduces the reflection, and simultaneously, chamfer inclined plane absorption film layer also can reduce the reflection to chamfer structure 3 can the significantly reduced veiling glare.
The inner side surface of the light through hole 1 is in a sawtooth shape, so that light rays are disturbed and scattered, and the effect of inhibiting stray light is better.
From inside to outside, the absorption film layer 5 is a Ti layer and a silicon dioxide layer which are alternately arranged, namely, from the substrate to the top, a Ti layer is firstly arranged, then a silicon dioxide layer is arranged, then a Ti layer is arranged, and the like, wherein the number of the Ti layers is 1-10, and the number of the silicon dioxide layers is 1-10. The absorbing film layer 5 can greatly reduce the reflectivity of the housing.
The specific conditions of the plasma sputtering coating process are as follows: the temperature is 70-80 ℃, the vacuum degree is 2.0e-3torr to 3.0e-3torr, the sputtering rate of Ti is 0.1-0.2 nm/s, and the sputtering rate of silicon dioxide is 0.3-0.7 nm/s. The absorbing film layer 5 is formed by plasma sputtering coating in high vacuum environment and is composed of Ti and SiO 2 Are alternately generated due to Ti and SiO 2 The film layer formed by adopting the plasma sputtering coating has better density and hardness, so that the scratch resistance of the coated shell is enhanced, and the reflectivity is reduced. The plasma sputtering coating is characterized in that the material is deposited in a molecular mode, and the coating thickness is thin (the total thickness is less than 1 mu m), so that the surface accuracy of the part cannot be damaged.
The total thickness of the absorption film layer 5 is less than 500nm, and the reflectivity is less than or equal to 0.3% in the wavelength range of 400-800 nm; the thickness ratio of the Ti layer to the silicon dioxide layer is (0.5-5): 1. through the optimized combination of each layer thickness, the rete structure has stronger surface hardness, possesses better antireflection effect simultaneously.
In a word, the substrate 2 with the light through hole 1 is obtained through an etching process, the chamfer structure 3 is formed on the edge of the inner side of the light through hole 1, and the absorption film layer 5 is arranged at the chamfer structure 3 through a coating film, so that reflection of light of the light through hole 1 can be reduced to the maximum extent under the double effects of reducing the reflection area and reducing the reflectivity, generation of stray light is inhibited, the thickness of the film layer is small and controllable, and image quality and definition of a camera are improved. And the absorbing film layer plated by adopting the plasma sputtering coating process replaces the existing screen printing black printing process, so that the absorbing film layer with low reflectivity and stable film layer Lab value can be obtained. The jig is used for shielding the non-coating area 4 in the coating process, so that the position accuracy of the coating area can be guaranteed, a good bending shape can be formed by stamping and bending, the laser solderless welding is adopted, the welding part can be ensured not to leak light, and the structure is reliable and attractive.
Variations and modifications to the above-described embodiments may occur to those skilled in the art, which fall within the scope and spirit of the above description. Therefore, the present invention is not limited to the specific embodiments disclosed and described above, and some modifications and variations of the present invention should fall within the scope of the claims of the present invention. Furthermore, although specific terms are employed herein, they are used in a generic and descriptive sense only and not for purposes of limitation.

Claims (8)

1. The manufacturing process of the periscopic camera module shell is characterized by at least comprising the following steps of:
firstly, etching, namely placing a base material subjected to film coating, exposure and development treatment in etching solution for etching treatment to obtain a substrate with a light through hole, wherein a chamfer structure is formed at the inner side edge of the light through hole;
secondly, coating, namely coating an absorption film layer on the substrate obtained in the first step by adopting a plasma sputtering coating process, and in the coating process, shielding an uncoated area by using a jig so that the absorption film layer is attached to both the coated area and the chamfer structure;
thirdly, bending, namely performing stamping and bending operation on the coated substrate to obtain a shell frame;
fourthly, performing laser welding on the shell frame obtained in the third step to obtain a required shell;
the chamfering structure is arc-shaped and inclined, and the edge of the inner side of the chamfering structure is in a sharp angle shape;
the angle of the pointed angle is less than 30 degrees.
2. The process for manufacturing a periscopic camera module housing according to claim 1, wherein: the first step, the etching solution is a mixed solution of ferric trichloride and hydrochloric acid, wherein the concentration of the ferric trichloride is 40% -60%; the concentration of the hydrochloric acid is 10-20%.
3. The process for manufacturing a periscopic camera module housing according to claim 2, wherein: in the first step, the etching treatment temperature is 40-50 ℃, the Baume degree of the etching solution is 40-42, and the movement speed of the base material is 1.5-2 m/min.
4. The process for manufacturing a periscopic camera module housing according to claim 1, wherein: the base material is stainless steel or copper alloy, and the thickness of the base material is 0.02-0.3mm.
5. The process for manufacturing a periscopic camera module housing according to claim 1, wherein: the inner side surface of the light through hole is in a sawtooth shape.
6. The process for manufacturing a periscopic camera module housing according to claim 1, wherein: from inside to outside, the absorption film layers are Ti layers and silicon dioxide layers which are alternately arranged.
7. The process for manufacturing a periscopic camera module housing according to claim 6, characterized in that: the specific conditions of the plasma sputtering coating process are as follows: the temperature is 70-80 ℃, the vacuum degree is 2.0e-3torr to 3.0e-3torr, the sputtering rate of Ti is 0.1-0.2 nm/s, and the sputtering rate of silicon dioxide is 0.3-0.7 nm/s.
8. The process for manufacturing a periscopic camera module housing according to claim 6, wherein: the total thickness of the absorption film layer is less than 500nm; the reflectivity is less than or equal to 0.3 percent within the wavelength range of 400-800 nm; the thickness ratio of the Ti layer to the silicon dioxide layer is (0.5-5): 1.
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