CN111463330A - Micro light emitting diode chip and manufacturing method and transfer method thereof - Google Patents
Micro light emitting diode chip and manufacturing method and transfer method thereof Download PDFInfo
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- CN111463330A CN111463330A CN201910108360.6A CN201910108360A CN111463330A CN 111463330 A CN111463330 A CN 111463330A CN 201910108360 A CN201910108360 A CN 201910108360A CN 111463330 A CN111463330 A CN 111463330A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Abstract
The invention discloses a micro light-emitting diode chip and a manufacturing method and a transferring method thereof, and belongs to the technical field of semiconductors. The micro light-emitting diode chip comprises an N electrode, a P electrode layer, an N-type gallium nitride layer, a light-emitting layer and a P-type gallium nitride layer which are sequentially stacked, wherein one of the N electrode and the P electrode is a tip electrode, and the other one of the N electrode and the P electrode is a plane electrode, so that the micro light-emitting diode chip is not a common cuboid in structure, and the tip electrode can be inserted into a bearing substrate to realize mass transfer. The pointed electrode can be held by the metal block on the receiving substrate after being inserted into the receiving substrate due to the shape of the pointed electrode, and cannot be easily separated, so that huge transfer can be realized under the condition of no heating welding, namely, the micro light-emitting diode chip does not need to be heated in the process of being inserted into the receiving substrate.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a micro light-emitting diode chip, and a manufacturing method and a transferring method of the micro light-emitting diode chip.
Background
A light emitting diode is a semiconductor diode that can convert electrical energy into light energy, and is widely used in the fields of display screens, backlight sources, and the like. The chip is the core component of the light emitting diode, and the micro light emitting diode chip is a diode chip with the size of micron order.
After the micro light emitting diode chip is manufactured, a huge amount of transfer is carried out. The conventional micro light-emitting diode chip is structurally cuboid, the surface bound with the bearing substrate is flat, and the micro light-emitting diode chip is heated and welded in the process of pressing the micro light-emitting diode chip onto the bearing substrate, namely, the welding connection is realized by simultaneously pressurizing and heating, so that devices around the chip are easily short-circuited in the process, and the transferred yield is low.
Disclosure of Invention
The invention provides a micro light-emitting diode chip, and a manufacturing method and a transferring method thereof, aiming at solving the problem of short circuit of devices around a chip in the process of binding the chip and a bearing substrate.
In order to achieve the above object, the present invention provides a micro light emitting diode chip, including: n electrode, P electrode to and the N type gallium nitride layer, luminescent layer and the P type gallium nitride layer that stack gradually the setting, the N electrode is connected N type gallium nitride layer and along deviating from the direction of luminescent layer extends, the P electrode layer is connected P type gallium nitride layer and along deviating from the direction of luminescent layer extends, the N electrode with one among the P electrode is most advanced form electrode, another is the plane electrode.
In the above-mentioned micro led chip, the led chip is a cone, and the top of the cone to the bottom of the cone are stacked in sequence: the point-shaped electrode, the N-type gallium nitride layer, the light-emitting layer, the P-type gallium nitride layer and the planar electrode, and the N electrode is the point-shaped electrode.
In the above-mentioned micro led chip, the light-emitting layer is close to the P electrode, opposite to the N electrode.
In the above-mentioned micro light emitting diode chip, the light emitting diode chip further includes an insulating passivation film, and the insulating passivation film covers the side surfaces of the N-type gallium nitride layer, the light emitting layer and the P-type gallium nitride layer.
In order to achieve the above object, the present invention provides a method for manufacturing a micro light emitting diode chip, comprising the steps of:
manufacturing a P electrode and an N electrode on the epitaxial layer; the epitaxial layer comprises an N-type gallium nitride layer, a light emitting layer and a P-type gallium nitride layer which are sequentially stacked, the P electrodes and the N electrodes are in one-to-one correspondence, one of the P electrodes and the N electrodes is a tip electrode, and the other one of the P electrodes and the N electrodes is a planar electrode;
and carrying out wet etching on the epitaxial layer by taking the tip-shaped electrode as a mask to obtain the micro light-emitting diode chip.
In the manufacturing method of the micro light emitting diode chip, the wet etching is performed on the epitaxial layer by using the tip-shaped electrode as a mask, and the step of obtaining the micro light emitting diode chip is specifically as follows:
and carrying out anisotropic wet etching on the epitaxial layer to obtain an epitaxial block, wherein the epitaxial block is in a frustum shape, the tip-shaped electrode is connected to the top of the frustum, and the plane electrode is connected to the bottom of the frustum to obtain the conical micro light-emitting diode chip.
In the manufacturing method of the micro light emitting diode chip, the used epitaxial layer further comprises a sapphire substrate and a U-shaped gallium nitride layer, and the sapphire substrate, the U-shaped gallium nitride layer, the N-shaped gallium nitride layer, the light emitting layer and the P-shaped gallium nitride layer are sequentially stacked; the step of manufacturing the P electrode and the N electrode on the epitaxial layer specifically comprises the following steps:
manufacturing a P electrode on the P-type gallium nitride layer of the epitaxial layer, wherein the P electrode is a planar electrode;
covering and binding a temporary substrate on the P electrode;
sequentially stripping the sapphire substrate and the U-shaped gallium nitride layer to expose the N-shaped gallium nitride layer;
manufacturing an N electrode on the N-type gallium nitride layer, wherein the N electrode is a tip-shaped electrode and corresponds to the P electrode;
or, the step of manufacturing the P electrode and the N electrode on the epitaxial layer specifically includes: sequentially stripping the sapphire substrate and the U-shaped gallium nitride layer to expose the N-shaped gallium nitride layer;
manufacturing an N electrode on the N-type gallium nitride layer, wherein the N electrode is a planar electrode;
covering and binding a temporary substrate on the N electrode;
and manufacturing a P electrode on the P-type gallium nitride layer, wherein the P electrode is a tip-shaped electrode and corresponds to the N electrode.
In order to solve the above problems, the present invention provides a method for transferring a micro light emitting diode chip, wherein the micro light emitting diode chip includes an N electrode, an N-type gallium nitride layer, a light emitting layer, a P-type gallium nitride layer, and a P electrode, which are sequentially stacked, one of the N electrode and the P electrode is a tip electrode, and the other is a planar electrode, the method comprising the steps of:
connecting a temporary substrate to the planar electrodes of the plurality of micro light-emitting diode chips;
inserting the tip-shaped electrodes of the plurality of micro light-emitting diode chips into the receiving substrate;
removing the temporary substrate.
Before the step of inserting the tip-shaped electrodes of a plurality of micro light emitting diode chips onto the receiving substrate, the method for transferring micro light emitting diode chips further comprises:
manufacturing a plurality of metal blocks on a bearing lining plate to form the bearing substrate; the metal blocks correspond to the micro light-emitting diode chips one by one, the metal blocks are in a hemispherical shape, the hemispherical shape comprises a bottom circular plane and a hemispherical surface, and the bottom circular plane is attached to the bearing lining plate;
the step of inserting the tip-shaped electrode of the micro light-emitting diode chip into the receiving substrate specifically comprises the following steps: and inserting the tip-shaped electrodes of the micro light-emitting diode chips into the corresponding metal blocks from the tops of the hemispheres respectively.
After the step of removing the temporary substrate, the method for transferring the micro light emitting diode chip further comprises the following steps: and heating and welding the metal blocks.
Compared with the prior art, the micro light-emitting diode chip provided by the invention comprises an N electrode, a P electrode, an N-type gallium nitride layer, a light-emitting layer and a P-type gallium nitride layer which are sequentially stacked, wherein the N electrode is connected with the N-type gallium nitride layer and extends along the direction away from the light-emitting layer, the P electrode layer is connected with the P-type gallium nitride layer and extends along the direction away from the light-emitting layer, one of the N electrode and the P electrode is a pointed electrode, and the other one of the N electrode and the P electrode is a planar electrode, so that the micro light-emitting diode chip is not a common cuboid in structure, the pointed N electrode or the pointed P electrode can be inserted into a receiving substrate to realize mass transfer, namely the part of the micro light-emitting diode chip, which is connected with the receiving substrate, is not flat but. The sharp-end-shaped electrode can be held by the metal block on the bearing substrate after being inserted into the bearing substrate due to the fact that the sharp-end-shaped electrode is thin relative to the whole flat surface, and cannot be separated easily, so that huge transfer can be achieved under the condition that heating welding is not carried out, heating is not needed in the process that the light-emitting diode chip is inserted into the bearing substrate, the problem that solder is extruded to the outside of the chip in a large amount during transfer to cause short circuit of surrounding devices is avoided, and the yield of the micro light-emitting diode chip after huge transfer is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 is a structural diagram of a light emitting diode chip in an exemplary embodiment of the invention;
fig. 2 is a flowchart illustrating a method for manufacturing a light emitting diode chip according to an exemplary embodiment of the invention;
fig. 3 is a schematic diagram illustrating a method for transferring a light emitting diode chip according to an exemplary embodiment of the invention;
fig. 4 is a schematic view of the micro led chip on the receiving substrate after the transfer method of the led chip in an exemplary embodiment of the invention.
Reference numerals:
100-a light emitting diode chip;
a 10-N electrode; 20-P electrode; a 30-N type gallium nitride layer; 40-a light emitting layer; a 50-P type gallium nitride layer;
200-a temporary substrate; 300-a receiving substrate; 310-receiving a lining board; 320-metal block.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the specific embodiments of the present invention and the accompanying drawings. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The tip-shaped electrode in the embodiment of the present invention refers to an electrode that is flat relative to the surface, and the tip-shaped electrode is more tapered in structure, and may be a point electrode or a strip electrode, etc.
The existing micro light-emitting diode chip is structurally cuboid, the surface bound with the bearing substrate is flat, so that the micro light-emitting diode chip needs to be simultaneously pressurized and heated to realize welding connection in the process of pressing the micro light-emitting diode chip onto the bearing substrate, short circuit of devices around the chip is easily caused in the process, and the transferred yield is low. In order to solve the problem, embodiments of the present invention provide a micro light emitting diode chip 100, and a manufacturing method and a transferring method of the micro light emitting diode chip 100.
Example 1
An exemplary embodiment of the present invention provides a micro led chip 100, as shown in fig. 1, including an N electrode 10, a P electrode 20, and an N-type GaN layer 30, a light-emitting layer 40 and a P-type GaN layer 50 which are sequentially stacked, an N electrode 10 is connected with the N-type GaN layer 30 and extends along the direction away from the light-emitting layer, a P electrode 20 is connected with the P-type GaN layer 50 and extends along the direction away from the light-emitting layer, and one of the N electrode 10 and the P electrode 20 is a tip electrode, and the other is a planar electrode, so that the structure of the micro led chip 100 according to the embodiment of the present invention is not a common rectangular parallelepiped, one of the pointed N-electrode 10 or P-electrode 20 can be directly connected to the receiving substrate without applying pressure and heat simultaneously to achieve a large amount of transfer, i.e., the portion of the micro led chip 100 connected to the receiving substrate is not flat but rather is tapered. The sharp-end-shaped electrode can be directly inserted into the receiving substrate by the self gravity and then held by the metal block on the receiving substrate without being easily separated due to the fact that the sharp-end-shaped electrode is thin, so that huge transfer can be achieved without heating welding, heating is not needed in the process of inserting the micro light-emitting diode chip into the receiving substrate, the problem that solder is extruded to the outside of the chip in a large amount during transfer to cause short circuit of devices around the chip is avoided, and the yield of the micro light-emitting diode chip 100 after huge transfer is improved.
The structure of the micro led chip 100 may be a cone, and the top of the cone and the bottom of the cone are a tip electrode and a planar electrode, respectively. The depth of the micro light emitting diode chip 100 in the cone structure inserted into the receiving substrate can be flexibly adjusted during transferring, and along with the increase of the depth of the micro light emitting diode chip 100 inserted into the receiving substrate, the micro light emitting diode chip 100 is more and more difficult to be inserted, so that the depth of the micro light emitting diode chip 100 inserted into the receiving substrate is not too shallow to be effectively held, and the micro light emitting diode chip 100 is not too deep to be completely wrapped by the receiving substrate.
The micro led chip 100 having a cone shape may be a cone, a tetrahedron, a pentahedron, a hexahedron, etc., and will not be described in detail.
The N-electrode 10 and the P-electrode 20 are stacked in this order: an N-type gallium nitride layer 30, a light emitting layer 40, and a P-type gallium nitride layer 50. Specifically, the tip electrode may be an N-electrode 10, and the planar electrode may be a P-electrode 20. When the N electrode 10 is located at the top of the cone and the P electrode 20 is located at the bottom of the cone, the layers are sequentially stacked from the top of the cone to the bottom of the cone: an N electrode 10, an N-type gallium nitride layer 30, a light emitting layer 40, a P-type gallium nitride layer 50, and a P electrode 20.
As a modification, the planar electrode may be an N-electrode 10, the tip-shaped electrode may be a P-electrode 20, and when the P-electrode 20 is located at the top of the pyramid and the N-electrode 10 is located at the bottom of the pyramid, the electrodes are stacked in order from the top of the pyramid to the bottom of the pyramid: p-electrode 20, P-type gallium nitride layer 50, light emitting layer 40, N-type gallium nitride layer 30, and N-electrode 10.
As a variation, the structure of the micro light emitting diode chip 100 may not be a cone, but other than a tapered electrode, the remaining electrode, the N-type gallium nitride layer 30, the light emitting layer 40, and the P-type gallium nitride layer 50 may be cuboids, that is, the tapered P-electrode 20 or N-electrode 10 is disposed on a flat surface, so that when the micro light emitting diode chip 100 is transferred subsequently, the flat surface can reduce the probability that the light emitting layer of the micro light emitting diode is also inserted into the metal block, thereby preventing the emergent light from being blocked by the metal block.
Since the thickness of the P-type gan layer 50 is directly related to the optical damage of the micro led chip 100, the thickness of the P-type gan layer 50 should be set to be thin. Specifically, the light-emitting layer 40 may be close to the P-electrode 20 relative to the N-electrode 10, so that the thickness of the P-type gallium nitride layer 50 may be reduced, and the optical damage of the micro light-emitting diode chip 100 may be reduced. Since the N-type gan layer 30 is thicker than the P-type gan layer 50, the N-electrode 10 is a tip electrode and the P-electrode 20 is a planar electrode, so that the light emitted from the light-emitting layer 40 can be prevented from being blocked by the metal block on the receiving substrate with a high probability.
In order to protect the N-type gallium nitride layer 30, the light-emitting layer 40, and the P-type gallium nitride layer 50 from insulation, an insulating passivation film is provided on the tapered side surface of the tapered cone, covering the side surfaces of the N-type gallium nitride layer 30, the light-emitting layer 40, and the P-type gallium nitride layer 50, and avoiding the N-electrode 10 and the P-electrode 20.
The N-electrode 10 may be a metal electrode, preferably made of chromium or nickel. The hardness of the cr or ni is greater than that of the in or sn, so that the N electrode in the tip shape in the micro led chip 100 can be easily inserted into the metal block made of in or sn on the receiving substrate in the subsequent transfer process. Of course, the P-electrode 20 may be a metal electrode made of chromium or nickel.
Example 2
Still another exemplary embodiment of the present invention provides a method of manufacturing a micro light emitting diode chip, in which an epitaxial layer used in the manufacturing includes an N-type gallium nitride layer, a light emitting layer, and a P-type gallium nitride layer, which are sequentially stacked, as shown in fig. 2, the method including the steps of:
s1: manufacturing a P electrode and an N electrode on the epitaxial layer; the P electrodes and the N electrodes correspond to each other one by one, one of the P electrodes and the N electrodes is a tip electrode, and the other one of the P electrodes and the N electrodes is a plane electrode;
s2: and carrying out wet etching on the epitaxial layer by taking the tip-shaped electrode as a mask to obtain the micro light-emitting diode. Specifically, wet etching is performed on the epitaxial layer to form an epitaxial block, and the epitaxial block is uniformly and correspondingly connected with the tip-shaped electrode and the planar electrode, so that the conical micro light-emitting diode chip is obtained.
Through the steps, the obtained micro light-emitting diode chip is provided with the tip-shaped electrode and the plane electrode, the tip-shaped electrode is used for being inserted into the receiving substrate, and the tip-shaped electrode can be held by the metal block on the receiving substrate after being inserted into the receiving substrate due to the taper of the tip shape and cannot be separated easily, so that huge transfer can be realized under the condition of no heating welding.
The epitaxial layer used in the manufacturing method can also comprise a sapphire substrate and a U-shaped gallium nitride layer, wherein the sapphire substrate, the U-shaped gallium nitride layer, the N-shaped gallium nitride layer, the light emitting layer and the P-shaped gallium nitride layer are sequentially stacked.
In step S1, the method specifically includes:
s11: manufacturing a P electrode on the P-type gallium nitride layer of the epitaxial layer, wherein the P electrode is a planar electrode;
s12: covering and binding the temporary substrate on the P electrode;
s13: sequentially stripping the sapphire substrate and the U-shaped gallium nitride layer to expose the N-shaped gallium nitride layer;
s14: and manufacturing an N electrode on the N-type gallium nitride layer, wherein the N electrode is a tip-shaped electrode and corresponds to the P electrode.
Through S11 to S14, the N electrode of the obtained micro light emitting diode chip is a tip electrode, and the P electrode corresponding to the N electrode and disposed opposite to the N electrode is a planar electrode. In step S13, the sapphire substrate may be peeled off by laser lift-off, but of course, other lift-off methods may be used, and will not be described again. In step S13, the U-shaped gallium nitride layer may be stripped by an etching method, specifically by dry etching or other etching methods, which are not described in detail. The temporary substrate may also be peeled off after step S14.
The N electrode of the obtained micro light emitting diode chip is a tip electrode through S11 to S14, and since the thickness of the N-type gallium nitride layer 30 is thicker than that of the P-type gallium nitride layer 50, the light emitted from the light emitting layer 40 can be prevented from being blocked by the metal block on the receiving substrate with a high probability.
As a modification, in step S1, the method specifically includes:
s11': sequentially stripping the sapphire substrate and the U-shaped gallium nitride layer to expose the N-shaped gallium nitride layer;
s12': manufacturing an N electrode on the N-type gallium nitride layer, wherein the N electrode is a planar electrode;
s13': covering and binding the temporary substrate on the N electrode;
s14': and manufacturing a P electrode on the P-type gallium nitride layer, wherein the P electrode is a tip-shaped electrode and corresponds to the N electrode.
Through S11 'to S14', the N electrode of the led chip is a planar electrode, and the P electrode opposite to the N electrode is a tip electrode. In step S11', the sapphire substrate may be peeled off by laser lift-off, but other lift-off methods may be used, and will not be described in detail. In step S11', the U-shaped gallium nitride layer may be stripped by an etching method, specifically by dry etching or other etching methods, which are not described in detail. In step S12', the N electrode may be etched on the N-type gallium nitride layer; in step S14', the P electrode may be etched on the P-type gan layer; the etching method may be dry etching or photolithography. The temporary substrate may also be peeled off after step S14'.
In step S2, after the tip-shaped electrode is used as a mask, the epitaxial layer is subjected to anisotropic wet etching so that the epitaxial layer is etched into an epitaxial block, the epitaxial block is shaped like a frustum of a prism, the tip-shaped electrode is connected to the top of the frustum of a prism, and the planar electrode is connected to the bottom of the frustum of a prism, thereby obtaining a pyramidal light emitting diode chip. Specifically, the shape of the frustum of prism includes circular frustum of prism, triangular frustum of prism, rectangular frustum of prism, etc., and will not be described any further. When the tip-shaped electrode is an N electrode, the top to the bottom of the cone of the obtained micro light-emitting diode chip are sequentially: the LED comprises an N electrode, an N-type gallium nitride layer, a light emitting layer, a P-type gallium nitride layer and a P electrode; when the tip-shaped electrode is a P-electrode, the top to the bottom of the cone of the obtained micro light-emitting diode chip are sequentially as follows: the light-emitting diode comprises a P electrode, a P-type gallium nitride layer, a light-emitting layer, an N-type gallium nitride layer and an N electrode.
The micro light-emitting diode chip obtained by the manufacturing method is provided with the tip-shaped electrode and the plane electrode on the N-type gallium nitride layer and the P-type gallium nitride layer which are opposite, and the tip-shaped electrode can be connected to the bearing substrate in an inserting mode to realize the connection of the micro light-emitting diode chip and the bearing substrate, so that the huge transfer of the micro light-emitting diode chip is completed.
Example 3
Another exemplary embodiment of the present invention provides a method for transferring a micro light emitting diode chip, which combines fig. 3 and fig. 4, and includes the following steps:
s5, connecting the temporary substrate 200 to the planar electrodes of the micro light-emitting diode chips 100;
s7, inserting the tip electrodes of the micro LED chips 100 into the substrate 300;
s9-removing the temporary substrate 200.
Before the step S7, the method further includes a step S6 of forming at least one metal block 320 on the receiving substrate 310 to form a receiving substrate 300, wherein the metal blocks 320 correspond to the micro light emitting diode chips 100 one by one, the metal blocks 320 are semi-spherical, the semi-sphere includes a bottom circular plane and a semi-spherical surface, and the bottom circular plane is attached to the receiving substrate 310. The metal block 320 is made of indium metal or tin metal, and the hemispherical surface of the hemisphere faces away from the receiving lining plate 310. The vertical distance from the bottom circular plane to the top of the hemispherical surface in the hemisphere may be greater than the vertical height of the tip-shaped electrode (which refers to the dimension in the direction perpendicular to the light emitting layer), so that a part of the N-type gallium nitride layer or the P-type gallium nitride layer connected to the tip-shaped electrode may also be surrounded by the metal block 320. Of course, the vertical distance from the bottom circular plane to the top of the hemispherical surface in the hemisphere should be smaller than the vertical distance from the tip-shaped electrode to the light-emitting layer 40, so as to avoid that the light-emitting layer 40 is also surrounded by the metal block 320.
Step S7 specifically includes: the tip electrodes of the micro led chips 100 are inserted into the corresponding metal blocks 320 from the top of the hemisphere. Specifically, as shown in fig. 3, the tip electrodes of the micro led chips 100 on the temporary substrate 200 are respectively inserted into the corresponding metal blocks 320 in the direction indicated by the arrow in fig. 3, so that the micro led chips 100 on the temporary substrate 200 are smoothly transferred to the receiving substrate 300 without using a fine transfer tool, and the receiving substrate 300 is not required to be provided with an adhesive layer for adhering the led chips 100. The tip-shaped electrode of the micro led chip 100 is inserted into the metal block 320 from the top of the hemispherical surface, as shown in fig. 4, so that the tip-shaped electrode is inserted into the soft metal block 320, the tip-shaped electrode can be electrically connected with the metal block 320, and the tip-shaped electrode can be held by the residual stress of the metal block 320 after being extruded and deformed, i.e., the cone-shaped micro led chip 100 can be held, so that the cone-shaped micro led chip 100 is not easily separated, which is beneficial to the realization of the transfer, and the short circuit of the surrounding devices of the micro led chip 100 is not caused in the transfer process. The pointed electrode may be an N electrode, and the N electrode is chromium or nickel metal.
After the step S9, the method further includes a step S11 of heat welding the metal block 320 to be slightly melted and then securely connected to the tip electrode.
The metal block 320 is heat soldered, and heat can be conducted to the micro light emitting diode chip 100. If the metal block 320 is heated when the temporary substrate 200 is not removed, heat will also be conducted to the temporary substrate 200, because the thermal expansion coefficients of the materials of the temporary substrate 200 and the metal block 320 are different, the internal stress of the micro light emitting diode chip 100 is increased easily when the temporary substrate 200 is not removed by heating the metal block 320, and the problem of excessive internal stress of the micro light emitting diode chip 100 can be avoided by heating the metal block 320 after the temporary substrate 200 is removed.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. The micro light-emitting diode chip is characterized by comprising an N electrode, a P electrode, an N-type gallium nitride layer, a light-emitting layer and a P-type gallium nitride layer which are sequentially stacked, wherein the N electrode is connected with the N-type gallium nitride layer and extends along the direction departing from the light-emitting layer, the P electrode layer is connected with the P-type gallium nitride layer and extends along the direction departing from the light-emitting layer, one of the N electrode and the P electrode is a tip-shaped electrode, and the other of the N electrode and the P electrode is a planar electrode.
2. The micro led chip of claim 1, wherein the led chip is a cone, and the top of the cone is stacked to the bottom of the cone in sequence: the point-shaped electrode, the N-type gallium nitride layer, the light-emitting layer, the P-type gallium nitride layer and the planar electrode, and the N electrode is the point-shaped electrode.
3. The micro light emitting diode chip of claim 2, wherein the light emitting layer is adjacent to the P electrode with respect to the N electrode.
4. The micro light emitting diode chip of claim 2, wherein the light emitting diode chip further comprises an insulating passivation film covering the N-type gallium nitride layer, the light emitting layer and the P-type gallium nitride layer on the side surfaces thereof.
5. A manufacturing method of a micro light emitting diode chip is characterized by comprising the following steps:
manufacturing a P electrode and an N electrode on the epitaxial layer; the epitaxial layer comprises an N-type gallium nitride layer, a light emitting layer and a P-type gallium nitride layer which are sequentially stacked, the P electrodes and the N electrodes are in one-to-one correspondence, one of the P electrodes and the N electrodes is a tip electrode, and the other one of the P electrodes and the N electrodes is a planar electrode;
and carrying out wet etching on the epitaxial layer by taking the tip-shaped electrode as a mask to obtain the micro light-emitting diode chip.
6. The method for manufacturing a micro light emitting diode chip according to claim 5, wherein the step of performing wet etching on the epitaxial layer by using the tip electrode as a mask to obtain the micro light emitting diode chip specifically comprises:
and carrying out anisotropic wet etching on the epitaxial layer to obtain an epitaxial block, wherein the epitaxial block is in a frustum shape, the tip-shaped electrode is connected to the top of the frustum, and the plane electrode is connected to the bottom of the frustum to obtain the conical micro light-emitting diode chip.
7. The method for manufacturing a micro light-emitting diode chip as claimed in claim 5, wherein the epitaxial layer further comprises a sapphire substrate, a U-shaped gallium nitride layer, and the sapphire substrate, the U-shaped gallium nitride layer, the N-type gallium nitride layer, the light-emitting layer and the P-type gallium nitride layer are sequentially stacked; the step of manufacturing the P electrode and the N electrode on the epitaxial layer specifically comprises the following steps:
manufacturing a P electrode on the P-type gallium nitride layer of the epitaxial layer, wherein the P electrode is a planar electrode;
covering and binding a temporary substrate on the P electrode;
sequentially stripping the sapphire substrate and the U-shaped gallium nitride layer to expose the N-shaped gallium nitride layer;
manufacturing an N electrode on the N-type gallium nitride layer, wherein the N electrode is a tip-shaped electrode and corresponds to the P electrode;
or, the step of manufacturing the P electrode and the N electrode on the epitaxial layer specifically includes: sequentially stripping the sapphire substrate and the U-shaped gallium nitride layer to expose the N-shaped gallium nitride layer;
manufacturing an N electrode on the N-type gallium nitride layer, wherein the N electrode is a planar electrode;
covering and binding a temporary substrate on the N electrode;
and manufacturing a P electrode on the P-type gallium nitride layer, wherein the P electrode is a tip-shaped electrode and corresponds to the N electrode.
8. A transfer method of a micro light-emitting diode chip is characterized in that the micro light-emitting diode chip comprises an N electrode, an N-type gallium nitride layer, a light-emitting layer, a P-type gallium nitride layer and a P electrode which are sequentially stacked, one of the N electrode and the P electrode is a tip electrode, and the other is a plane electrode, and the transfer method comprises the following steps:
connecting a temporary substrate to the planar electrodes of the plurality of micro light-emitting diode chips;
inserting the tip-shaped electrodes of the plurality of micro light-emitting diode chips into the receiving substrate;
removing the temporary substrate.
9. The method for transferring micro led chips as claimed in claim 8, wherein before the step of inserting the tip electrodes of a plurality of said micro led chips onto a receiving substrate, the method further comprises:
manufacturing a plurality of metal blocks on a bearing lining plate to form the bearing substrate; the metal blocks correspond to the micro light-emitting diode chips one by one, the metal blocks are in a hemispherical shape, the hemispherical shape comprises a bottom circular plane and a hemispherical surface, and the bottom circular plane is attached to the bearing lining plate;
the step of inserting the tip-shaped electrode of the micro light-emitting diode chip into the receiving substrate specifically comprises the following steps: and inserting the tip-shaped electrodes of the micro light-emitting diode chips into the corresponding metal blocks from the tops of the hemispheres respectively.
10. The method for transferring a micro light-emitting diode chip as claimed in claim 9, further comprising, after the step of removing the temporary substrate, the steps of: and heating and welding the metal blocks.
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