CN101257057A - Optical semiconductor device - Google Patents
Optical semiconductor device Download PDFInfo
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- CN101257057A CN101257057A CNA2008100095307A CN200810009530A CN101257057A CN 101257057 A CN101257057 A CN 101257057A CN A2008100095307 A CNA2008100095307 A CN A2008100095307A CN 200810009530 A CN200810009530 A CN 200810009530A CN 101257057 A CN101257057 A CN 101257057A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 43
- 230000003287 optical effect Effects 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000009792 diffusion process Methods 0.000 claims abstract description 4
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 230000002265 prevention Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 abstract 6
- 239000012790 adhesive layer Substances 0.000 abstract 2
- 230000008020 evaporation Effects 0.000 description 14
- 238000001704 evaporation Methods 0.000 description 14
- 238000005530 etching Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 238000000992 sputter etching Methods 0.000 description 5
- 239000012141 concentrate Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005755 formation reaction Methods 0.000 description 3
- XZXYQEHISUMZAT-UHFFFAOYSA-N 2-[(2-hydroxy-5-methylphenyl)methyl]-4-methylphenol Chemical compound CC1=CC=C(O)C(CC=2C(=CC=C(C)C=2)O)=C1 XZXYQEHISUMZAT-UHFFFAOYSA-N 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- 229940107816 ammonium iodide Drugs 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- 238000002231 Czochralski process Methods 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
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- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
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- General Physics & Mathematics (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Semiconductor Lasers (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
In an optical semiconductor device that emits or receives light substantially perpendicularly to or in parallel to an active surface formed on a semiconductor substrate, the optical semiconductor device, an electrode that is formed on the active surface side and connected to the active surface is stepped or tapered at an end of the electrode. The electrode of the optical semiconductor device is formed of three layers including an adhesive layer, a diffusion prevention layer, and an Au layer, and the stepped configuration or the taped configuration is formed by a difference of the thickness of the Au layer or the thickness of the adhesive layer/diffusion prevention layer/Au layer.
Description
Technical field
The present invention relates to the optical semiconductor device of a kind of semiconductor light-emitting apparatus and semiconductor light-receiving device etc., particularly relate to a kind of optical semiconductor device of reliability excellence.
Background technology
Referring to figs. 1 through Fig. 3, the semicondcutor laser unit of background technology is described.Here, Fig. 1 is the oblique view of semicondcutor laser unit.Fig. 2 and Fig. 3 are the profiles of semicondcutor laser unit.
Among Fig. 1, in semicondcutor laser unit, on InP substrate 10, form the striped 60 that contains active layer, about striped 60, form the electric capacity adjustment PAD 30 of electrode, after forming the not shown passivating film 40 that goes out, on striped 60, form through hole, form then after the electrode film 20, adopt photo-engraving process to process this electrode film 20, form the p electrode on Fig. 1 right side.In addition, among the figure abridged n electrode be the reverse side of InP substrate 10 grind the back the reverse side of InP substrate 10 (below) go up and form.
In addition, the electrode in Fig. 1 left side is a floating potential, forms for the ease of the operation of semicondcutor laser unit.In addition, laser is in vibration of the bottom of striped 60 and direction emission forwards, backwards, and its emission ratios is determined by the not shown transmitting film in the end face setting.
Fig. 2 is the profile of the position that is shown in broken lines among Fig. 1.In addition, in this manual, do not give hatching in the profile.This is in order to prevent the numerous and diverse of drawing.As illustrated in fig. 1, PAD 30 is formed on the bottom of p electrode and floating electrode.Passivating film 40 covers the whole active face of semicondcutor laser unit, makes the upper opening as the mesa transistor 50 of striped 60 parts, obtains the electrical connection of mesa transistor 50 and electrode film 20.
Fig. 3 is the profile of the foremost portion (transmitting terminal) of Fig. 1.Semicondcutor laser unit is in its transmitting terminal, and electrode film 20 covers whole of stripeds 60, on two side positions of mesa transistor 50 several μ m～10 μ m of the wide about 1 μ m of distance, forms electrode film end 20b by ion milling.The position of this electrode film end 20b is designed according to its electric capacity.At this, electrode film 20 is vapor-deposited films of Ti/Pt/Au, and its thickness is followed successively by 150nm/40nm/750nm.In addition, Ti guarantees and the substrate adhesion that Pt prevents the prevention thing of Au to the substrate diffusion, and Au is current sheet and is used as wire-bonded.Stress when producing the film growth in the electrode film 20, and residual this stress.This stress is maximum at the 20b place, electrode film end that becomes disconnected point.The thickness of the InP substrate 10 after reverse side grinds is thinned to 90 μ m.On the other hand, the stress of electrode film 20 is tensile stresses of GPa level.As a result, the stress of electrode film 20 makes InP substrate 10 protrude (making that the electrode face is in the inboard) distortion below.In addition, in this specification, the record of Ti/Pt/Au means Ti in the lower side (InP substrate-side), and Au is in the top side.
According to inventor's etc. research, this distortion makes electronics below mesa transistor 50 and hole distribution on longitudinal direction (above-below direction in the paper) when having and when thickening and the influence of attenuation.As a result, current density increases when having laser generation, and the heat of generation is concentrated and caused the such worry of crystalline fracture.Semicondcutor laser unit is under the state that is attached to the laser module on the thermal source, because laser generation, so distortion is repaired.But it is necessary that the worry of crystalline fracture is taken some countermeasures in advance.
Summary of the invention
The invention provides a kind of optical semiconductor device that does not cause this worry of crystalline fracture and reliability excellence because of the stress of electrode film.
Above-mentioned problem is to realize by such optical semiconductor device: luminous or be subjected to light with vertical direction or parallel direction substantially on the active face that forms on the semiconductor substrate, and on the active face side, forming the electrode that is connected with above-mentioned active face, this electrode has stairstepping in its end.
Description of drawings
Fig. 1 is the oblique view of semicondcutor laser unit.
Fig. 2 is the profile of semicondcutor laser unit.
Fig. 3 is the fragmentary cross-sectional view of the ejaculation end of semicondcutor laser unit.
Fig. 4 is the fragmentary cross-sectional view of the ejaculation end of semicondcutor laser unit.
Fig. 5 is the schematic diagram of the processing technology of semicondcutor laser unit.
Fig. 6 is the block diagram that is applicable to the light emission module of semicondcutor laser unit.
Fig. 7 is the schematic diagram of other processing technology of semicondcutor laser unit.
Fig. 8 is the schematic diagram of other other processing technology of semicondcutor laser unit.
Summary of the invention
In the embodiments of the present invention, the accompanying drawing of consulting and using describes embodiment below.In addition, identical reference number, no longer repeat specification are distributed in identical in fact position.
Embodiment 1
With reference to Fig. 4 to Fig. 6 embodiment 1 is described.At this, Fig. 4 is the fragmentary cross-sectional view of the ejaculation end of semicondcutor laser unit.Fig. 5 is the schematic diagram of the processing technology of semicondcutor laser unit.Fig. 6 is the block diagram that is applicable to the light emission module of semicondcutor laser unit.
In Fig. 4, semicondcutor laser unit 100 is in its ejecting end, and electrode film 20 covers stripeds 60 these faces, on two side positions of mesa transistor 50 several μ m～10 μ m of the wide about 1 μ m of distance, forms electrode film end 20b by ion milling.But the metallization of this electrode film end 20b is that Ti/Pt is two-layer.In addition, the Au electrode film end 20a of the 1-3 μ m inboard of the through electrode film end 20b of the Au layer of electrode film 20.Such structure is because the Ti of formation electrode film 20 and the stress of Pt and Au are not concentrated on the 20b of electrode film end, and, because the also big Au electrode film end 20a of film thickness maximum stress, so the Ti/Pt layer has the function as stress relaxation layer.
With reference to Fig. 5, the processing technology of the Au electrode film end 20a of key diagram 4.In Fig. 5, (a) be the profile of the major part behind the Ti/Pt/Au evaporation; (b) be the profile of the major part after etching electrode forms with the resist pattern; (c) be the profile of the major part behind the Au wet etching; (d) be the profile of the major part behind the Ti/Pt dry etching; (e) be the profile of the major part after resist is peeled off.
Among Fig. 5 (a), electrode film 20 is evaporation Ti/Pt/Au in the scope of 10nm～1 μ m.At this, difference evaporation 150nm/40nm/750nm.After in Fig. 5 (b), forming resist pattern 70, etching in the aqueous solution of iodine and ammonium iodide in Fig. 5 (c).At this, the aqueous solution of iodine and ammonium iodide can be selected etching between Au and Pt.In addition, just be etched in and when etching, do not stop, beginning to the resist 70 of 1-3 μ m degree to stop when following from carrying out etching.In Fig. 5 (d), Ti/Pt adopts identical resist to carry out etching by ion milling.At this, adopt the etching of ion milling to have anisotropy, do not carry out etching in the horizontal.Consequently, shown in Fig. 5 (e), the whole outside of electrode film 20 is the two-layer structure of Ti/Pt portion and Ti/Pt/Au portion.Because Au electrode film end 20a attached on the Ti/Pt, relaxes so obtain stress by Ti/Pt.Consequently, not forming stress among near electrode film end 20b mesa transistor 50 and the Au film end 20a concentrates.
According to the foregoing description, can access the semicondcutor laser unit of reliability excellence.But the electrode film that forms on active layer across passivating film is not limited to Ti/Pt/Au, also can be Ti/Mo/Au etc.In addition, the film thickness of each of electrode film layer is not limited to described in the foregoing description.In addition, conductivity type also can be opposite.As semicondcutor laser unit, illustrated end face light emitting-type also can be a surface-emitting type.Because the optical semiconductor infrared rays receiver adopts the Au distribution, therefore, also can be that end face is subjected to light type or face to be subjected to the optical semiconductor infrared rays receiver of light type.Comprise semiconductor light-emitting apparatus and semiconductor light-receiving device at this optical semiconductor device.
By semicondcutor laser unit the foregoing description is illustrated, but also can be applied to have the semiconductor device of the distribution that comprises the Au layer that the through hole by passivating film is connected with active layer at least.
Light emission module 900 shown in Fig. 6 constitutes by laser module 910 with by the drive circuit 930 of capacity cell 920 to laser module 910 supply drive currents.To supply with drive circuit 903 from the positive signal of telecommunication of IN1 terminal 940 with from the anti-phase signal of telecommunication of IN2 terminal 950.In addition, laser module 910 by semicondcutor laser unit 100, be loaded in semiconductor laser 100 identical thermals source (not shown) on resistive element 911 formations that are connected with cathode side with thermistor 912 of the monitoring temperature of semicondcutor laser unit 100 with semicondcutor laser unit 100.In addition, from the anode of the drive current semiconductor supply laser aid 100 of drive circuit 903.The laser diode 100 of present embodiment is because electrode tip is two-layer structure and reliability height.Consequently, also has high reliability as laser module.In addition, also has high reliability as light emission module.
Embodiment 2
With reference to Fig. 7 embodiment 2 is described.At this, Fig. 7 is the schematic diagram of the processing technology of semicondcutor laser unit.In Fig. 7, (a) be the profile of the major part behind the Ti/Pt/Au evaporation; (b) be the profile of the major part after etching electrode forms with the resist pattern; (c) be the profile of the major part behind the Ti/Pt/Au dry etching; (d) be the profile of the major part after resist is peeled off; (e) by lifting the profile that forms the major part behind the Au pattern.
Among Fig. 7 (a), Ti/Pt/Au difference evaporation 150nm/40nm/100nm in the electrode film 20.After in Fig. 7 (b), forming the resist pattern, in Fig. 7 (c), carry out etching by ion milling Ti/Pt/Au.After in Fig. 7 (d), peeling off the resist pattern, through forming not shown resist pattern, the Au of evaporation 650nm and the czochralski process that resist is peeled off, shown in Fig. 7 (e), the whole outside of electrode film 20 is the two-layer structure of Ti/Pt/Au (100nm) portion and Ti/Pt/Au (750nm) portion.Consequently, not forming stress near the end of the electrode film the mesa transistor 50 20 20b and 20a concentrates.
In addition, in Fig. 7 (a), Ti/Pt/Au evaporation respectively is 150nm/40nm/100nm.Though the Au of 100nm is used for anti-oxidation, just the Ti/Pt evaporation is that 150nm/40nm also is fine.In this case, make that the Au that lifts is 750nm.
Moreover, preferred not shown lifting (リ Off ト is Off) resist pattern formation back taper as shown in Figure 8.At this and since the Au evaporation spread to the resist pattern below.Consequently, the end of the pattern of the Au by lifting (リ Off ト just Off) evaporation forms taper, concentrates thereby more alleviated stress.
According to the foregoing description, can access the semicondcutor laser unit of reliability excellence.But the electrode film that forms on active layer across passivating film is not limited to Ti/Pt/Au, also can be Ti/Mo/Au etc.In addition, the film thickness of each of electrode film layer is not limited in the foregoing description, can be 100nm/25nm/500nm, can also be 80nm/20nm/400nm.In addition, conductivity type also can be opposite.As semicondcutor laser unit, illustrated end face light emitting-type also can be a surface-emitting type.Because the optical semiconductor infrared rays receiver also adopts the Au distribution, therefore, also can be that end face is subjected to light type or face to be subjected to the optical semiconductor infrared rays receiver of light type.Comprise semiconductor light-emitting apparatus and semiconductor light-receiving device at this optical semiconductor device.
In addition, identical with embodiment 1, by adopting the high semicondcutor laser unit of reliability, can provide high laser module of reliability and the high light emission module of reliability.Thereby can provide reliability high Optical Receivers.
Embodiment 3
With reference to Fig. 8 embodiment 3 is described.At this, Fig. 8 is the schematic diagram of the processing technology of semicondcutor laser unit.In Fig. 8, (a) be after through hole forms the profile of major part; (b) be the profile that lifts the major part after forming with the resist pattern; (c) be the profile of the major part behind the Ti/Pt/Au evaporation; (d) be the profile that lifts the major part after lifting with resist.
Among Fig. 8 (a), on mesa transistor 50, process through hole by the passivating film 40 that the mesa transistor 50 that forms on the whole InP of the covering substrate and PAD 30 form.In Fig. 8 (b), except the position of remaining electrode pattern, on whole of InP substrate 10, form resist pattern 80.Because this resist pattern 80 is to process by the czochralski method of electrode film 20 to make, in the end, form back taper or inverted steps shape.By the two-layer resist that forms the low relatively eurymeric resist of sensitivity on highly sensitive eurymeric resist is carried out the pattern that single exposure forms, can process and make this inverted steps shape or inverted steps shape.In addition, can make by on the high ground floor of the solubility of relative developer solution, processing by the low relatively second layer of solubility after forming sensitization.In addition, in the latter case, ground floor can not have photonasty yet.
In Fig. 8 (c), pass through electron beam (EB) electrode evaporation film 20.At this moment, InP substrate 10 is not only perpendicular to revolution around the axle of vapor deposition source, and InP substrate 10 autobiographies own.Carry out evaporation from all directions on the surface of InP substrate 10.Consequently, the inside in resist pattern 80 ends that form back taper or inverted steps shape, the end 20c of formation back taper or inverted steps shape on the electrode film 20.In addition, on resist pattern 80, also form electrode film 20.In addition, electrode film 20 is Ti/Pt/Au, and the thickness of its film is 150nm/40nm/750nm.
In Fig. 8 (d),, also remove the electrode film 20 that on resist pattern 80, forms simultaneously, form electrode pattern by czochralski method by peeling off, remove resist pattern 80.Form taper or stairstepping on the 20c of the end of electrode 20, the film thickness ratio of the Ti/Pt/Au of end 20c is about 4: 1: 19.Consequently, the pattern end of the Ti/Pt/Au by lifting evaporation forms taper or stairstepping, concentrates thereby alleviated stress.
According to the foregoing description, can access the semicondcutor laser unit of reliability excellence.But the electrode film that forms on active layer by passivating film is not limited to Ti/Pt/Au, also can be Ti/Mo/Au etc.In addition, the film thickness of each of electrode film layer is not limited in the foregoing description, can be 100nm/25nm/500nm, can also be 80nm/20nm/400nm.In addition, conductivity type also can be opposite.As semicondcutor laser unit, illustrated end face light emitting-type also can be a surface-emitting type.Because the optical semiconductor infrared rays receiver also adopts the Au distribution, therefore, also can be that end face is subjected to light type or face to be subjected to the optical semiconductor infrared rays receiver of light type.Comprise semiconductor light-emitting apparatus and semiconductor light-receiving device at this optical semiconductor device.
In addition, identical with embodiment 1, by adopting the high semicondcutor laser unit of reliability, can provide high laser module of reliability and the high light emission module of reliability.Thereby can provide reliability high Optical Receivers.
According to the present invention, can provide a kind of optical semiconductor device of reliability excellence.
Claims (6)
1. optical semiconductor device, for luminous or be subjected to the semiconductor device of light with vertical direction or parallel direction substantially on the active face that forms on the semiconductor substrate, it is characterized in that: form the electrode that is connected with above-mentioned active face on a side of above-mentioned active face, this electrode has stairstepping or taper in its end.
2. as the optical semiconductor device of record in the claim 1, wherein above-mentioned electrode forms the plural layer that contains the Au layer, and above-mentioned stairstepping is to form by having or not of Au layer.
3. as the optical semiconductor device of record in the claim 1, wherein above-mentioned electrode forms the plural layer that contains the Au layer, and above-mentioned stairstepping is that the thickness difference by the Au tunic forms.
4. as the optical semiconductor device of record in the claim 3, the thickness difference of wherein above-mentioned Au tunic forms by lifting.
5. as the optical semiconductor device of record in the claim 1, wherein above-mentioned electrode is made of adhesion coating, diffusion impervious layer and current sheet, and the above-mentioned taper or the stairstepping of the end of this electrode form by lifting.
6. as the optical semiconductor device of each record in the claim 1～5, wherein this optical semiconductor device is semiconductor light-emitting apparatus or semiconductor light-receiving device.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007047352 | 2007-02-27 | ||
| JP2007-047352 | 2007-02-27 | ||
| JP2007047352 | 2007-02-27 | ||
| JP2007133059 | 2007-05-18 | ||
| JP2007133059A JP2008244414A (en) | 2007-02-27 | 2007-05-18 | Semiconductor optical device |
| JP2007-133059 | 2007-05-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101257057A true CN101257057A (en) | 2008-09-03 |
| CN101257057B CN101257057B (en) | 2011-04-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2008100095307A Active CN101257057B (en) | 2007-02-27 | 2008-01-30 | Optical semiconductor device |
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| Country | Link |
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| JP (1) | JP2008244414A (en) |
| KR (1) | KR100946867B1 (en) |
| CN (1) | CN101257057B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111341743A (en) * | 2018-12-19 | 2020-06-26 | 株式会社村田制作所 | Electronic component |
| CN111463330A (en) * | 2019-01-18 | 2020-07-28 | 昆山工研院新型平板显示技术中心有限公司 | Micro light emitting diode chip and manufacturing method and transfer method thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6320676B2 (en) * | 2013-01-30 | 2018-05-09 | 日本オクラロ株式会社 | Semiconductor optical modulator and optical communication module |
| JP2018049300A (en) * | 2017-12-28 | 2018-03-29 | 日本オクラロ株式会社 | Semiconductor optical modulator and optical communication module |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH04239772A (en) * | 1991-01-23 | 1992-08-27 | Furukawa Electric Co Ltd:The | Electrode for semiconductor element |
| JP2817769B2 (en) | 1994-12-28 | 1998-10-30 | 日本電気株式会社 | Optical amplifying device, semiconductor laser device using the same, and driving method thereof |
| JP2004335530A (en) * | 2003-04-30 | 2004-11-25 | Mitsubishi Electric Corp | Ridge waveguide semiconductor laser |
| JP2005072203A (en) * | 2003-08-22 | 2005-03-17 | Seiko Epson Corp | Terminal electrode, semiconductor device, semiconductor module, electronic equipment, and method of manufacturing the semiconductor device |
| CN100524855C (en) * | 2004-03-31 | 2009-08-05 | 日亚化学工业株式会社 | Nitride semiconductor light emitting element |
| JP2006100369A (en) * | 2004-09-28 | 2006-04-13 | Sharp Corp | Semiconductor laser device and its manufacturing method |
| JP4956928B2 (en) | 2004-09-28 | 2012-06-20 | 日亜化学工業株式会社 | Semiconductor device |
| JP2006324582A (en) | 2005-05-20 | 2006-11-30 | Seiko Epson Corp | Plane emissive semiconductor laser and manufacturing method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111341743A (en) * | 2018-12-19 | 2020-06-26 | 株式会社村田制作所 | Electronic component |
| CN111341743B (en) * | 2018-12-19 | 2024-04-16 | 株式会社村田制作所 | Electronic component |
| CN111463330A (en) * | 2019-01-18 | 2020-07-28 | 昆山工研院新型平板显示技术中心有限公司 | Micro light emitting diode chip and manufacturing method and transfer method thereof |
| CN111463330B (en) * | 2019-01-18 | 2022-07-29 | 成都辰显光电有限公司 | Micro light emitting diode chip and manufacturing method and transfer method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20080079591A (en) | 2008-09-01 |
| KR100946867B1 (en) | 2010-03-09 |
| CN101257057B (en) | 2011-04-27 |
| JP2008244414A (en) | 2008-10-09 |
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