CN111463143A - 半导体设备腔室、用于腔室的系统和沉积物状态控制方法 - Google Patents
半导体设备腔室、用于腔室的系统和沉积物状态控制方法 Download PDFInfo
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- CN111463143A CN111463143A CN201910060128.XA CN201910060128A CN111463143A CN 111463143 A CN111463143 A CN 111463143A CN 201910060128 A CN201910060128 A CN 201910060128A CN 111463143 A CN111463143 A CN 111463143A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32954—Electron temperature measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (26)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910060128.XA CN111463143B (zh) | 2019-01-22 | 2019-01-22 | 半导体设备腔室、用于腔室的系统和沉积物状态控制方法 |
Applications Claiming Priority (1)
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CN201910060128.XA CN111463143B (zh) | 2019-01-22 | 2019-01-22 | 半导体设备腔室、用于腔室的系统和沉积物状态控制方法 |
Publications (2)
Publication Number | Publication Date |
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CN111463143A true CN111463143A (zh) | 2020-07-28 |
CN111463143B CN111463143B (zh) | 2023-03-24 |
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CN201910060128.XA Active CN111463143B (zh) | 2019-01-22 | 2019-01-22 | 半导体设备腔室、用于腔室的系统和沉积物状态控制方法 |
Country Status (1)
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CN (1) | CN111463143B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113658885A (zh) * | 2021-08-12 | 2021-11-16 | 长鑫存储技术有限公司 | 制备腔室的确定方法及装置 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0697242A (ja) * | 1992-09-10 | 1994-04-08 | Tokyo Electron Yamanashi Kk | プローブ装置 |
US6083323A (en) * | 1994-09-30 | 2000-07-04 | Applied Materials, Inc. | Method for controlling the temperature of the walls of a reaction chamber during processing |
CN1419265A (zh) * | 2001-08-31 | 2003-05-21 | 株式会社东芝 | 半导体器件制造方法、制造装置及其清洗方法和制造系统 |
US20040097063A1 (en) * | 2001-03-30 | 2004-05-20 | Takeshi Sakuma | Single wafer processing method and system for processing semiconductor |
US20050070104A1 (en) * | 2003-09-30 | 2005-03-31 | Tokyo Electron Limited | Method and processing system for monitoring status of system components |
CN101572219A (zh) * | 2008-04-29 | 2009-11-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种腔室状态监控系统、方法以及半导体处理设备 |
WO2014204078A1 (ko) * | 2013-06-17 | 2014-12-24 | 주식회사 우리정도 | 관형 필터트랩을 갖는 고속 증착용 상온 화학증착장치 및 그 원격제어시스템과 그 증착방법 |
CN107587122A (zh) * | 2016-07-06 | 2018-01-16 | 三星电子株式会社 | 沉积处理监视系统和控制方法以及半导体器件制造方法 |
-
2019
- 2019-01-22 CN CN201910060128.XA patent/CN111463143B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0697242A (ja) * | 1992-09-10 | 1994-04-08 | Tokyo Electron Yamanashi Kk | プローブ装置 |
US6083323A (en) * | 1994-09-30 | 2000-07-04 | Applied Materials, Inc. | Method for controlling the temperature of the walls of a reaction chamber during processing |
US20040097063A1 (en) * | 2001-03-30 | 2004-05-20 | Takeshi Sakuma | Single wafer processing method and system for processing semiconductor |
CN1419265A (zh) * | 2001-08-31 | 2003-05-21 | 株式会社东芝 | 半导体器件制造方法、制造装置及其清洗方法和制造系统 |
US20050070104A1 (en) * | 2003-09-30 | 2005-03-31 | Tokyo Electron Limited | Method and processing system for monitoring status of system components |
CN101572219A (zh) * | 2008-04-29 | 2009-11-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种腔室状态监控系统、方法以及半导体处理设备 |
WO2014204078A1 (ko) * | 2013-06-17 | 2014-12-24 | 주식회사 우리정도 | 관형 필터트랩을 갖는 고속 증착용 상온 화학증착장치 및 그 원격제어시스템과 그 증착방법 |
CN107587122A (zh) * | 2016-07-06 | 2018-01-16 | 三星电子株式会社 | 沉积处理监视系统和控制方法以及半导体器件制造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113658885A (zh) * | 2021-08-12 | 2021-11-16 | 长鑫存储技术有限公司 | 制备腔室的确定方法及装置 |
CN113658885B (zh) * | 2021-08-12 | 2023-09-08 | 长鑫存储技术有限公司 | 制备腔室的确定方法及装置 |
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Publication number | Publication date |
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CN111463143B (zh) | 2023-03-24 |
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Address after: Building 8, 28 Jinghai 2nd Road, Beijing Economic and Technological Development Zone, Beijing Applicant after: Beijing Yitang Semiconductor Technology Co.,Ltd. Applicant after: MATTSON TECHNOLOGY, Inc. Address before: 100023 Building 8, 28 Jinghai 2nd Road, Beijing Economic and Technological Development Zone, Beijing Applicant before: Beijing Yitang Semiconductor Technology Co.,Ltd. Applicant before: MATTSON TECHNOLOGY, Inc. |
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Address after: 100176 Building 8, 28 Jinghai 2nd Road, Beijing Economic and Technological Development Zone, Beijing Applicant after: Beijing Yitang Semiconductor Technology Co.,Ltd. Applicant after: MATTSON TECHNOLOGY, Inc. Address before: 100176 Building 8, 28 Jinghai 2nd Road, Beijing Economic and Technological Development Zone, Beijing Applicant before: Beijing Yitang Semiconductor Technology Co.,Ltd. Applicant before: MATTSON TECHNOLOGY, Inc. |
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