CN111463107B - Wafer cleaning equipment - Google Patents
Wafer cleaning equipment Download PDFInfo
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- CN111463107B CN111463107B CN202010266787.1A CN202010266787A CN111463107B CN 111463107 B CN111463107 B CN 111463107B CN 202010266787 A CN202010266787 A CN 202010266787A CN 111463107 B CN111463107 B CN 111463107B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02065—Cleaning during device manufacture during, before or after processing of insulating layers the processing being a planarization of insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/335—Cleaning
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention relates to the technical field of wafer cleaning, in particular to wafer cleaning equipment, which comprises a plasma cleaning assembly for cleaning residues on the surface of a wafer, wherein the plasma cleaning assembly comprises a cleaning chamber for placing the wafer and a plasma source which is positioned in the cleaning chamber and generates plasma beams for cleaning the wafer, an installation chamber is arranged at the top end of the cleaning chamber, the plasma source is positioned in the installation chamber, the movement direction of the plasma beams generated by the plasma source is obliquely arranged relative to the wafer, and an air suction piece for vacuumizing the cleaning chamber is arranged at one side of the cleaning chamber. The wafer is cleaned by utilizing the plasma, a large number of pipelines and joints are not required to be installed in the equipment, and the maintenance time and the cost in the later period of the equipment are reduced. The surface of the wafer is bombarded and cleaned by utilizing plasma, and the wafer is removed in a manner of avoiding friction by directly contacting the surface of the wafer by using a rolling brush, so that the wafer is cleaned in a green and nondestructive way. And the plasma volume is smaller than that of water molecules, so that the plasma can penetrate into micro holes of the wafer, and ion bombardment cleaning can be performed on the surface of the wafer within a certain thickness.
Description
Technical Field
The invention relates to the technical field of wafer cleaning, in particular to wafer cleaning equipment.
Background
Integrated circuit fabrication processes generally refer to the deposition of conductive, semiconductive, insulating layers on a particular substrate (e.g., a silicon-based wafer) in a process sequence. In the manufacturing process, CMP (chemical mechanical polishing) equipment is mainly used for planarizing a wafer surface after film deposition, so as to perform a subsequent semiconductor process. Since a certain amount of chemical liquid is required to be added to assist polishing in the polishing process, chemical liquid remains on the surface of the wafer, and therefore cleaning is required to remove the residues on the surface of the wafer after polishing is completed.
In the invention patent of application publication number CN105789096a, a wafer cleaning apparatus is disclosed, which mainly includes an ultrasonic unit 1', a brushing unit 2', a cleaning unit 3', a spin-drying unit 4', a robot device, and various detecting units, as shown in fig. 1. The ultrasonic units 1', the brushing units 2', the cleaning units 3', and the spin-drying units 4' are sequentially arranged, and the distance between the units is matched with the stroke of the manipulator; the ultrasonic unit 1' is provided with an ultrasonic cleaning source and a cleaning rotating wheel, the cleaning rotating wheel enables a wafer to be vertically placed, and the wafer is pre-cleaned by utilizing an ultrasonic oscillation mode; then enters a brushing unit 2', a rotary brushing rolling brush is arranged on the brushing unit 2', the rotary rolling brushes at the two ends are contacted with the surface of the wafer, and the wafer is brushed in an acidic solution environment; after the brushing is finished, the wafer enters a cleaning unit 3', and the surface of the wafer is cleaned by deionized water; after cleaning, the wafer enters a spin-drying unit 4', the spin-drying unit 4' is a lifting platform, the wafer is gripped by a fixed block and a fixed claw, and the wafer is separated from the surface of the wafer under the action of centrifugal force by high-speed rotation. And (5) entering a wafer box after spin-drying, and thus finishing the wafer cleaning process.
However, the existing equipment adopts a solution cleaning mode, so that a large number of pipelines and joints are arranged in the equipment, the requirements on the tightness of waterway and air pipeline pipelines are high, the risk of pipeline leakage exists, and the later maintenance time and cost of the equipment are increased.
Disclosure of Invention
The invention aims to provide wafer cleaning equipment, which utilizes active particles and high-energy rays contained in plasma to act on the surface of a wafer so as to remove dirt molecules from the surface of the wafer, optimize the structure of the equipment and reduce the later maintenance time and cost of the equipment.
In order to achieve the above purpose, the technical scheme adopted by the invention is to provide a wafer cleaning device, which comprises a plasma cleaning component for cleaning residues on the surface of a wafer, and a plasma source which is positioned at the inner side of the cleaning chamber and can generate plasma beams to bombard the cleaning wafer, wherein the top end of the cleaning chamber is provided with an installation chamber which is communicated with the cleaning chamber, the plasma source is positioned in the installation chamber, the movement direction of the plasma beams generated by the plasma source is obliquely arranged relative to the wafer, and one side of the cleaning chamber is provided with an air extracting piece which can extract the cleaning chamber to vacuum.
Further, the air extraction piece is located at the top end of the cleaning chamber, a notch is formed in the cleaning chamber and located in front of the plasma beam reflection path, and the air extraction piece comprises an air extraction opening communicated with the notch.
Further, a water removal assembly is included on one side of the cleaning chamber and is configured to remove moisture from the wafer.
Further, the dehydration assembly comprises a heating chamber capable of placing a wafer and a heat source capable of drying wafer moisture, wherein the heat source is positioned in the heating chamber.
Further, the wafer cleaning apparatus also includes a transport assembly that transports wafers from the heating chamber to the cleaning chamber.
Further, the transport assembly comprises a wafer tray capable of placing wafers and a conveying shaft positioned at the bottom end of the wafer tray, wherein the heating chamber and the cleaning chamber are internally provided with the conveying shaft, and the conveying shaft is rotatably connected with the heating chamber and the cleaning chamber.
Further, the conveying shaft surface is provided with a pattern engraved with an increased friction force.
Further, a connecting port for communicating the heating chamber with the cleaning chamber is arranged on one side of the heating chamber adjacent to the cleaning chamber, and a partition component for controlling the opening or closing of the connecting port is arranged at the connecting port.
Further, the partition assembly comprises a support, a valve plate, a valve rod and a sealing element, wherein the support is arranged at the bottom end of the connecting port and is positioned between the heating chamber and the cleaning chamber; the support is suitable for supporting the valve plate; the valve rod acts on the valve plate and is suitable for driving the valve plate to open or close the connecting port; the sealing piece is arranged at the two sides of the valve plate and is connected to the heating chamber and/or the cleaning chamber.
Further, gate valves suitable for wafer in and out are respectively arranged on one sides of the heating chamber and the cleaning chamber, which are far away from the connecting ports.
The invention has the beneficial effects that:
1. the wafer is cleaned by utilizing the plasma, a large number of pipelines and joints are not required to be installed in the equipment, the maintenance time and the cost in the later period of the equipment are reduced, meanwhile, the damage of the acid solvent to the human body can be avoided, and the secondary corrosion of the acid solution to the wafer can also be avoided. For the pollutants which are forcefully remained on the surface of the wafer, the surface of the wafer is bombarded and cleaned by utilizing plasma, and the friction mode that a rolling brush is directly contacted with the surface of the wafer is avoided for removing, so that the wafer is cleaned in a green and nondestructive way. And the plasma volume is smaller than that of water molecules, so that the plasma can penetrate into micro holes of the wafer, ion bombardment cleaning can be performed on the surface of the wafer within a certain thickness, and the cleaning effect is improved.
2. The plasma beam generated by the plasma source can reach the position of the air extraction opening after being reflected by the wafer, and at the moment, the air extraction piece works, so that the bombarded plasma beam and bombarded impurities can be timely discharged outside the cleaning cavity, and the cleaning effect of the wafer is enhanced.
3. And the water on the wafer is removed through the water removal assembly, so that the subsequent wafer cleaning is facilitated. If water exists on the surface of the wafer, the vacuum degree of more than 0.1Pa is not easy to reach in the cleaning cavity, the plasma generation and vacuumizing time are affected, and the production takt is further affected.
4. The water can be evaporated by heating to remove the water on the wafer. Compared with other modes for removing water, the heating operation is simple and convenient, no external force is required to drive, and the wafer structure is not easy to damage.
5. Through setting up the transportation subassembly, the wafer after the stoving of being convenient for enters into the cleaning chamber in, is favorable to the automation of equipment for the cleaning process has guaranteed production beat.
6. The wafer tray can hold wafers, and plays a role in protecting the wafers to a certain extent. The rotation of the transmission shaft can drive the wafer tray to move, so that the movement of the wafer is realized, and the wafer enters the cleaning chamber from the heating chamber.
7. Through setting up the decorative pattern, increased the frictional force of conveying axle, when the conveying axle rotated, be favorable to the removal of wafer tray more.
8. After the wafer is subjected to water vapor removal in the heating chamber, the partition component is opened, so that the wafer can enter the cleaning chamber. By arranging the partition component, the generation of plasma is prevented from being influenced by the fact that water enters the cleaning chamber.
9. The partition component comprises a valve plate sealing piece, and the valve plate needs to be pushed and pulled frequently, so that the sealing performance of the valve plate is weakened, the sealing effect of the valve plate is enhanced by arranging the sealing piece, and the phenomenon that the plasma is influenced due to the fact that water gas in the heating cavity enters the cleaning cavity is avoided.
10. And the wafer is placed and taken out through the arranged gate valve.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a drawing of the background art;
fig. 2 is a schematic perspective view of a wafer cleaning apparatus according to an embodiment of the present invention;
fig. 3 is a schematic plan view of a wafer cleaning apparatus according to an embodiment of the present invention.
Reference numerals illustrate:
1', an ultrasonic unit; 2', a brushing unit; 3', a cleaning unit; 4', a spin-drying unit; 1. a plasma cleaning assembly; 11. cleaning the chamber; 12. a plasma source; 13. a mounting chamber; 2. an air extracting member; 21. an extraction opening; 3. a dewatering assembly; 31. a heating chamber; 32. a heat source; 4. a transport assembly; 41. a wafer tray; 42. a conveying shaft; 5. a connection port; 51. a partition assembly; 511. a support; 512. a valve plate; 513. a seal; 6. a gate valve.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
Referring to fig. 2 and 3, as a wafer cleaning apparatus provided in an embodiment of the present invention, the wafer cleaning apparatus includes:
the plasma cleaning assembly 1 comprises a cleaning chamber 11 capable of placing a wafer, wherein the cleaning chamber 11 is provided with a space suitable for placing the wafer, the specific shape of the space is not limited, and the cleaning chamber can be in a regular shape, such as a cuboid shape, or an irregular shape, as long as the wafer can be accommodated;
the plasma source 12 is positioned at the inner side of the cleaning chamber 11 and can generate plasma beams to bombard the cleaning wafer, the top end of the cleaning chamber 11 is provided with the installation chamber 13, the installation chamber 13 is communicated with the cleaning chamber 11, the plasma source 12 is positioned in the installation chamber 13, the moving direction of the plasma beams generated by the plasma source 12 is obliquely arranged relative to the wafer, and one side of the cleaning chamber 11 is provided with the air suction piece 2 which can vacuumize the cleaning chamber 11. Specifically, an interface is provided on the plasma source 12, a gas source suitable for connecting inert gas, such as argon or other inert gas, is introduced at the interface, and meanwhile, a high-voltage power supply is connected to the plasma source 12, and the inert gas is excited by the high-voltage power supply, so as to generate a plasma beam.
The wafer is cleaned by utilizing the plasma, a large number of pipelines and joints are not required to be installed in the equipment, the maintenance time and the cost in the later period of the equipment are reduced, meanwhile, the damage of the acid solvent to the human body can be avoided, and the secondary corrosion of the acid solution to the wafer can also be avoided. For the pollutants which are forcefully remained on the surface of the wafer, the surface of the wafer is bombarded and cleaned by utilizing plasma, and the friction mode that a rolling brush is directly contacted with the surface of the wafer is avoided for removing, so that the wafer is cleaned in a green and nondestructive way. And the plasma volume is smaller than that of water molecules, so that the plasma can penetrate into micro holes of the wafer, ion bombardment cleaning can be performed on the surface of the wafer within a certain thickness, and the cleaning effect is improved.
The plasma beam generated by the plasma source 12 is obliquely arranged with the wafer, after the plasma beam bombards the surface of the wafer, impurities on the surface of the wafer and the plasma beam are discharged at a certain angle under the reflection action of the wafer, if the plasma beam vertically bombards the surface of the wafer, the bombarded plasma beam and the impurities on the surface of the wafer still keep a vertical state with the wafer, and when the weight of the plasma beam and the impurities is overlapped to a certain degree, the impurities easily fall back to the surface of the wafer again, so that the cleaning effect is weakened. As a preferred embodiment, the angle between the plasma source 12 and the horizontal is 45 degrees.
Specifically, the air extraction member 2 is located at the top end of the cleaning chamber 11, a gap is disposed in front of the plasma beam reflection path on the cleaning chamber 11, the air extraction member 2 includes an air extraction opening 21 communicated with the gap, and the plasma beam generated by the plasma source 12 can reach the position of the air extraction opening 21 after being reflected by the wafer. When the air extraction piece 2 works, the bombarded plasma beam and bombarded impurities can be timely discharged to the outside of the cleaning cavity 11, and the cleaning effect of the wafer is enhanced.
In this embodiment, the air extracting member 2 may be a molecular pump and/or a dry pump, the molecular pump is installed at the top end of the cleaning chamber 11, and the cleaning chamber 11 is further provided with a flange interface, and the flange interface may be connected with the dry pump. The air extraction piece 2 can realize the vacuum pumping of the cleaning chamber 11 and can timely discharge the bombarded plasma beam and bombarded impurities out of the cleaning chamber 11,
when the cleaning chamber 11 is pumped to a certain vacuum degree, argon is introduced into the interface of the plasma source 12, and the interface is connected with a high-voltage power supply. Argon is introduced into the wafer, glow discharge is generated, and the generated plasma beam bombards the surface of the wafer under the action of an electric field, so that substances remained on the surface of the wafer are stripped under the high-energy plasma beam and move towards the air extraction opening 21.
Referring to fig. 2 and 3, further, a wafer cleaning apparatus according to an embodiment of the present invention further includes a water removing unit 3 disposed at one side of the cleaning chamber 11 and capable of removing water from the wafer. The water on the wafer is removed through the water removing assembly 3, so that the subsequent wafer cleaning is facilitated. If moisture exists on the surface of the wafer, the vacuum degree of more than 0.1Pa is not easy to reach in the cleaning chamber 11, so that the generation of plasma and the time of vacuumizing are affected, and the production takt is further affected.
Specifically, the dewatering module 3 includes a heating chamber 31 in which a wafer can be placed and a heat source 32 in which the wafer moisture can be dried, the heating chamber 31 is located at one side of the cleaning chamber 11, the heat source 32 is located in the heating chamber 31, and the heat source 32 is located close to the process surface of the wafer. The water can be evaporated by heating to remove the water on the wafer. Compared with other modes for removing water, the heating operation is simple and convenient, no external force is required to drive, and the wafer structure is not easy to damage. In this embodiment, the heat source 32 is an armored heating wire, and a plurality of armored heating wires are arranged in a row and fixed on one side of the heating chamber 31 and close to the process surface of the wafer. The temperature can reach 300 ℃ by adopting the armored heating wire, so as to bake the water vapor on the surface of the wafer, and the PID controller is matched with the temperature sensor to form the whole temperature control system.
Other resistance heating wires may be used as the heat source 32. The heat source 32 may also be disposed outside the heating chamber 31, where the heating chamber 31 is made of a heat conducting material, and the heat of the heat source 32 is conducted into the heating chamber 31 to evaporate the water on the wafer surface through the heat conduction of the heating chamber 31.
Referring to fig. 2 and 3, further, a wafer cleaning apparatus provided as an example of the present invention further includes a transport assembly 4 that transports a wafer from the heating chamber 31 to the cleaning chamber 11. Through setting up transportation subassembly 4, the wafer after the stoving of being convenient for enters into in wasing cavity 11, is favorable to the automation of equipment for the cleaning process has guaranteed the takt.
Specifically, the transport assembly 4 includes a wafer tray 41 capable of placing wafers, and a transfer shaft 42 disposed at a bottom end of the wafer tray 41, wherein the transfer shafts 42 are disposed in the heating chamber 31 and the cleaning chamber 11, and the transfer shaft 42 is rotatably connected to the heating chamber 31 and the cleaning chamber 11. The wafer tray 41 can hold wafers, and protects the wafers to some extent. The rotation of the transfer shaft 42 drives the wafer tray 41 to move, thereby moving the wafer from the heating chamber 31 to the cleaning chamber 11.
The heating chamber 31 and the cleaning chamber 11 are provided with servo motors and/or magnetic fluid power parts on the outer sides thereof, and the power parts can transmit and guide the rotation mode to the transmission shaft 42 so that the transmission shaft 42 rotates. The surface of the transfer shaft 42 is provided with a pattern engraved to increase friction force, which is more advantageous for movement of the wafer tray 41 when the transfer shaft 42 rotates. The specific pattern of the pattern is not limited, and the pattern may be regular or irregular, and the pattern may be integrally formed on the conveying shaft 42 or may be obtained by post-lathe processing.
The power unit may be disposed inside the heating chamber 31 and the cleaning chamber 11, and the conveying shaft 42 may be replaced by a single conveying mode such as a robot conveying mode, a conveying bracket conveying mode, a belt wheel conveying mode, or several combined conveying modes.
Referring to fig. 2 and 3, further, as an example of the wafer cleaning apparatus provided by the present invention, a connection port 5 for communicating the heating chamber 31 with the cleaning chamber 11 is provided at a side of the heating chamber 31 adjacent to the cleaning chamber 11, and a partition member 51 for controlling the connection port 5 to be opened or closed is provided at the connection port 5. After the wafer is dehydrated in the heating chamber 31, the partition assembly 51 is opened to allow the wafer to enter the cleaning chamber 11. By providing the partition assembly 51, the entry of moisture into the cleaning chamber 11 is prevented from affecting the generation of plasma.
Specifically, the partition assembly 51 includes a support 511, a valve plate 512, a valve rod, and a sealing member 513, wherein the support 511 is disposed at the bottom end of the connection port 5 and between the heating chamber 31 and the cleaning chamber 11, and the sealing member 513 is disposed at two sides of the valve plate 512 and connected to the heating chamber 31 and/or the cleaning chamber 11, and in this embodiment, the sealing member 513 employs a rubber cushion. Support 511 is adapted to support valve plate 512, and a valve stem is disposed on valve plate 512 and adapted to drive valve plate 512 open or closed. Because the valve plate 512 needs to be pushed and pulled for multiple times, the tightness of the valve plate 512 is weakened, and the sealing effect of the valve plate 512 is enhanced by arranging the sealing member 513, so that the influence of the water vapor in the heating chamber 31 to the generation of plasma caused by the water vapor entering the cleaning chamber 11 is avoided. Meanwhile, as shown in fig. 3, a gap is arranged between the dewatering assembly 3 and the plasma cleaning assembly 1, and the gap acts on the upper position of the valve plate 512, so that a lifting area for the valve plate 512 is provided, and the valve plate 512 can be manually driven, and can also be lifted in a way of matching a turntable and threads.
The heating chamber 31 and the cleaning chamber 11 are provided with gate valves 6 adapted for wafer entry and exit, respectively, on sides thereof away from the connection port 5, and the gate valves 6 are provided at left and right positions of the apparatus as shown in fig. 3. The gate valve 6 of the heating chamber 31 and the gate valve 6 of the cleaning chamber 11 correspond to the positions of the connection ports 5, that is, after the wafer tray 41 is placed from the gate valve 6 side of the heating chamber 31, the wafer tray 41 is conveniently transferred from the gate valve 6 side of the cleaning chamber 11.
As a variable embodiment of the present invention, the heating chamber 31 may be located below the cleaning chamber 11, and the transporting assembly 4 may use a manipulator in the prior art to grasp, move and lift the dried wafer from the heating chamber 31 into the cleaning chamber 11, so as to clean the wafer. Or the transportation assembly 4 adopts the lifter in the prior art, at this time, the lifter is only arranged in the heating chamber 31, the lifter can lift and transport the dried wafer into the cleaning chamber 11, the cleaning chamber 11 is internally provided with a clamping device, after the wafer is clamped and fixed, the lifter is retracted into the heating chamber 31, at this time, the partition assembly 51 is closed again, and the cleaning of the wafer is continuously completed.
The embodiments of the present invention are all preferred embodiments of the present invention, and are not intended to limit the scope of the present invention in this way, therefore: all equivalent changes in structure, shape and principle of the invention should be covered in the scope of protection of the invention.
Claims (9)
1. The utility model provides a wafer cleaning equipment, its characterized in that, including cleaning the plasma cleaning component (1) of wafer surface residue, it includes can place the cleaning chamber (11) of wafer and be located cleaning chamber (11) inboard and can produce plasma beam bombardment cleaning wafer's plasma source (12), the top of cleaning chamber (11) is provided with installation cavity (13), installation cavity (13) with cleaning chamber (11) are linked together, plasma source (12) are located in installation cavity (13), just the direction of motion of the plasma beam that plasma source (12) produced is inclined setting relative to the wafer, cleaning chamber (11) one side is provided with can be with cleaning chamber (11) are taken out to vacuum pumping piece (2), pumping piece (2) are located cleaning chamber (11)'s top, be provided with the breach on cleaning chamber (11) in the place ahead of plasma beam reflection path, pumping piece (2) include with the breach is linked together pumping mouth (21).
2. A wafer cleaning apparatus according to claim 1, further comprising a water removal assembly (3) located on one side of the cleaning chamber (11) for removing water from the wafer.
3. A wafer cleaning apparatus according to claim 2, characterized in that the dewatering element (3) comprises a heating chamber (31) in which the wafer can be placed and a heat source (32) in which the wafer moisture can be dried, the heat source (32) being located in the heating chamber (31).
4. A wafer cleaning apparatus according to claim 3, characterized in that the wafer cleaning apparatus further comprises a transport assembly (4) for transporting wafers from the heating chamber (31) to the cleaning chamber (11).
5. A wafer cleaning apparatus according to claim 4, characterized in that the transport assembly (4) comprises a wafer tray (41) on which wafers can be placed and a transfer shaft (42) at the bottom end of the wafer tray (41), the heating chamber (31) and the cleaning chamber (11) are each provided with a transfer shaft (42), and the transfer shaft (42) is rotatably connected to the heating chamber (31) and the cleaning chamber (11).
6. A wafer cleaning apparatus according to claim 5, characterized in that the surface of the transfer shaft (42) is provided with a pattern engraved to increase friction.
7. A wafer cleaning apparatus according to any one of claims 3 to 6, characterized in that a connection port (5) for communicating the heating chamber (31) with the cleaning chamber (11) is provided on a side of the heating chamber (31) adjacent to the cleaning chamber (11), and a partition member (51) for controlling the connection port (5) to be opened or closed is provided at the connection port (5).
8. A wafer cleaning apparatus according to claim 7, wherein the partition assembly (51) comprises:
a support (511) arranged at the bottom end of the connection port (5) and located between the heating chamber (31) and the cleaning chamber (11);
-a valve plate (512), the support (511) being adapted to support the valve plate (512);
a valve stem acting on said valve plate (512) and adapted to drive said valve plate (512) to open or close said connection port (5); and
and sealing members (513) which are arranged at positions on both sides of the valve plate (512) and are connected to the heating chamber (31) and/or the cleaning chamber (11).
9. A wafer cleaning apparatus according to claim 8, characterized in that the heating chamber (31) and the cleaning chamber (11) are each provided with a gate valve (6) adapted for wafer ingress and egress on a side remote from the connection port (5).
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| CN113351579B (en) * | 2021-06-07 | 2022-09-13 | 中南大学 | Method for treating surface of copper-zinc-tin-sulfur-selenium film through plasma cleaning |
| CN114242626B (en) * | 2021-12-21 | 2022-04-29 | 智程半导体设备科技(昆山)有限公司 | Dry-method wafer cleaning equipment |
| CN115586712B (en) * | 2022-10-09 | 2023-09-22 | 亚新半导体科技(无锡)有限公司 | Energy-saving photoresist removing and cleaning equipment for wafer production |
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