CN111463107A - Wafer cleaning equipment - Google Patents
Wafer cleaning equipment Download PDFInfo
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- CN111463107A CN111463107A CN202010266787.1A CN202010266787A CN111463107A CN 111463107 A CN111463107 A CN 111463107A CN 202010266787 A CN202010266787 A CN 202010266787A CN 111463107 A CN111463107 A CN 111463107A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02065—Cleaning during device manufacture during, before or after processing of insulating layers the processing being a planarization of insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/335—Cleaning
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention relates to the technical field of wafer cleaning, in particular to wafer cleaning equipment, which comprises a plasma cleaning assembly for removing residues on the surface of a wafer, and the plasma cleaning assembly comprises a cleaning chamber for placing the wafer and a plasma source which is positioned in the cleaning chamber and generates plasma beams to clean the wafer, wherein the top end of the cleaning chamber is provided with an installation chamber, the plasma source is positioned in the installation chamber, the moving direction of the plasma beams generated by the plasma source is obliquely arranged relative to the wafer, and one side of the cleaning chamber is provided with an air pumping piece for pumping the cleaning chamber to be vacuum. The wafer is cleaned by using the plasma, a large number of pipelines and joints are not required to be installed in the equipment, and the later maintenance time and cost of the equipment are reduced. The surface of the wafer is bombarded and cleaned by plasma, so that the wafer is removed in a mode of avoiding direct contact with the surface of the wafer by using a rolling brush, and the cleaning is green and nondestructive. And because the plasma volume is smaller than the water molecule, the plasma can penetrate into the wafer micro-pores, and the ion bombardment cleaning within a certain thickness of the surface of the wafer can be carried out.
Description
Technical Field
The invention relates to the technical field of wafer cleaning, in particular to wafer cleaning equipment.
Background
Integrated circuit fabrication processes generally refer to the deposition of conductor, semiconductor, and insulator layers on a particular substrate (e.g., a silicon-based wafer) in a process sequence. In the manufacturing process, CMP (chemical mechanical polishing) equipment is mainly used for planarizing the surface of a wafer after film deposition so as to perform the subsequent semiconductor process. Because a certain amount of chemical liquid needs to be added for auxiliary polishing in the polishing process, the chemical liquid can remain on the surface of the wafer, and therefore, cleaning is needed after polishing is completed to remove residues on the surface of the wafer.
In an invention patent with application publication No. CN105789096A, a wafer cleaning apparatus is disclosed, as shown in fig. 1, the cleaning apparatus mainly includes an ultrasonic unit 1 ', a brushing unit 2', a cleaning unit 3 ', a spin-drying unit 4', a manipulator device, and various detection units. The ultrasonic unit 1 ', the brushing unit 2', the cleaning unit 3 'and the spin-drying unit 4' are sequentially arranged, and the distance between the units is matched with the stroke of the manipulator; the ultrasonic unit 1' is provided with an ultrasonic cleaning source and a cleaning rotating wheel, the cleaning rotating wheel enables the wafer to be vertically placed, and the wafer is pre-cleaned in an ultrasonic oscillation mode; then the wafer enters a brushing unit 2 ', a rotary brushing rolling brush is arranged on the brushing unit 2', the rotary rolling brushes at the two ends are contacted with the surface of the wafer, and the wafer is brushed in an acidic solution environment; after the brushing is finished, the wafer enters a cleaning unit 3', and the surface of the wafer is cleaned by deionized water; and after cleaning, the wafer enters a spin-drying unit 4 ', the spin-drying unit 4' is a lifting platform, the wafer is tightly gripped by a fixed block and a fixed claw, and water is separated from the surface of the wafer under the action of centrifugal force through high-speed rotation. And (4) after spin-drying, entering a wafer box, and finishing the wafer cleaning process.
However, the existing equipment adopts a solution cleaning mode, a large number of pipelines and joints are arranged in the equipment, the requirement on the tightness of water paths and gas circuit pipelines is high, the risk of pipeline leakage exists, and the later maintenance time and cost of the equipment are increased.
Disclosure of Invention
The invention aims to provide wafer cleaning equipment, which utilizes active particles and high-energy rays contained in plasma to act on the surface of a wafer to remove dirt molecules from the surface of the wafer, optimizes the structure of the equipment and reduces the later maintenance time and cost of the equipment.
In order to achieve the above object, the technical solution adopted by the present invention is to provide a wafer cleaning apparatus, which includes a plasma cleaning assembly for removing residues on a wafer surface, and includes a cleaning chamber capable of accommodating a wafer and a plasma source located inside the cleaning chamber and capable of generating a plasma beam to bombard and clean the wafer, wherein an installation chamber is arranged at a top end of the cleaning chamber, the installation chamber is communicated with the cleaning chamber, the plasma source is located in the installation chamber, a movement direction of the plasma beam generated by the plasma source is inclined with respect to the wafer, and an air pumping member for pumping the cleaning chamber to a vacuum state is arranged at one side of the cleaning chamber.
Furthermore, the air pumping part is positioned at the top end of the cleaning chamber, a notch is arranged in front of the plasma beam reflection path on the cleaning chamber, and the air pumping part comprises an air pumping opening communicated with the notch.
Further, the wafer cleaning device also comprises a dewatering component which is positioned at one side of the cleaning chamber and can remove moisture on the wafer.
Further, the water removal assembly comprises a heating chamber capable of placing the wafer and a heat source capable of drying water of the wafer, and the heat source is located in the heating chamber.
Further, the wafer cleaning equipment also comprises a transportation assembly for transporting the wafer from the heating chamber to the cleaning chamber.
Further, the transportation assembly comprises a wafer tray capable of placing wafers and a conveying shaft located at the bottom end of the wafer tray, the heating chamber and the cleaning chamber are internally provided with the conveying shaft, and the conveying shaft is rotatably connected with the heating chamber and the cleaning chamber.
Further, the surface of the conveying shaft is provided with patterns for increasing friction.
Furthermore, a connecting port for communicating the heating chamber with the cleaning chamber is arranged on one side of the heating chamber adjacent to the cleaning chamber, and a partition component for controlling the opening or closing of the connecting port is arranged at the connecting port.
Further, the partition assembly comprises a support, a valve plate, a valve rod and a sealing element, wherein the support is arranged at the bottom end of the connecting port and is positioned between the heating chamber and the cleaning chamber; the support is adapted to support the valve plate; the valve rod acts on the valve plate and is suitable for driving the valve plate to open or close the connecting port; the sealing element is arranged at the positions of two sides of the valve plate and is connected to the heating chamber and/or the cleaning chamber.
Further, the heating chamber and the cleaning chamber are respectively provided with a gate valve suitable for the wafer to enter and exit on the sides far away from the connecting port.
The invention has the beneficial effects that:
1. the wafer is cleaned by using the plasma, a large number of pipelines and joints are not required to be installed in the equipment, the maintenance time and cost in the later period of the equipment are reduced, meanwhile, the harm of an acid solvent to a human body can be avoided, and the secondary corrosion of the acid solution to the wafer can also be avoided. And for pollutants strongly remained on the surface of the wafer, the surface of the wafer is bombarded and cleaned by plasma, so that the pollutants are removed in a mode of directly contacting the surface of the wafer by using a rolling brush for friction, and the cleaning is green and nondestructive. And because the plasma volume is less than the water molecule, the plasma can penetrate into the wafer micro-pores, so that the ion bombardment cleaning within a certain thickness of the surface of the wafer can be carried out, and the cleaning effect is improved.
2. The plasma beam generated by the plasma source can reach the position of the air exhaust opening after being reflected by the wafer, and the air exhaust part works at the moment, so that the bombarded plasma beam and the bombarded impurities can be timely discharged out of the cleaning cavity, and the cleaning effect of the wafer is enhanced.
3. And the water on the wafer is removed through the water removing component, so that the subsequent wafer is convenient to clean. If the surface of the wafer has moisture, the vacuum degree in the cleaning chamber is not easy to reach more than 0.1Pa, the generation of plasma and the time of vacuumizing are influenced, and the production rhythm is further influenced.
4. The water can be evaporated by heating, and the water on the wafer can be removed. Compared with other moisture removal modes, the heating operation is simple and convenient, no external force is used for driving, and the wafer structure is not easy to damage.
5. Through setting up the transportation subassembly, the wafer after being convenient for dry enters into and washs the chamber, is favorable to the automation of equipment for the washing process has guaranteed the takt.
6. The wafer tray can contain wafers, and plays a role in protecting the wafers to a certain extent. The rotation of the transmission shaft can drive the wafer tray to move, so that the wafer can move and enter the cleaning chamber from the heating chamber.
7. Through setting up the decorative pattern, increased the frictional force of conveying axle, when conveying axle rotates, be favorable to the removal of wafer tray more.
8. After the wafer is subjected to moisture removal in the heating chamber, the partition assembly is opened, so that the wafer can enter the cleaning chambers. Through setting up and cutting off the subassembly, avoid aqueous vapor to enter into the washing chamber and influence the production of plasma.
9. The partition assembly comprises a valve plate sealing element, the valve plate needs to be pushed and pulled frequently, the sealing performance of the valve plate is weakened, the sealing effect of the valve plate is enhanced by the sealing element, and the phenomenon that steam in the heating chamber enters the cleaning chamber to affect plasma is avoided.
10. Through the arranged gate valve, the wafer is placed and taken out.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a background art drawing;
fig. 2 is a schematic perspective view of a wafer cleaning apparatus according to an embodiment of the present invention;
fig. 3 is a schematic plan view of a wafer cleaning apparatus according to an embodiment of the present invention.
Description of reference numerals:
1', an ultrasound unit; 2', a brushing unit; 3', a cleaning unit; 4', a spin-drying unit; 1. a plasma cleaning assembly; 11. cleaning the chamber; 12. a plasma source; 13. installing a chamber; 2. an air extraction member; 21. an air extraction opening; 3. a dewatering component; 31. a heating chamber; 32. a heat source; 4. a transport assembly; 41. a wafer tray; 42. a transfer shaft; 5. a connecting port; 51. a partition assembly; 511. a support member; 512. a valve plate; 513. a seal member; 6. a gate valve.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Referring to fig. 2 and 3, a wafer cleaning apparatus provided as an embodiment of the present invention includes:
the plasma cleaning assembly 1 comprises a cleaning chamber 11 for placing a wafer, wherein the cleaning chamber 11 has a space suitable for placing the wafer, and the specific shape of the space is not limited, and the space can be a regular shape, such as a rectangular parallelepiped, or an irregular shape, as long as the wafer can be accommodated;
the plasma source 12 is positioned inside the cleaning chamber 11 and can generate plasma beams to bombard and clean the wafer, the top end of the cleaning chamber 11 is provided with an installation chamber 13, the installation chamber 13 is communicated with the cleaning chamber 11, the plasma source 12 is positioned inside the installation chamber 13, the moving direction of the plasma beams generated by the plasma source 12 is obliquely arranged relative to the wafer, and one side of the cleaning chamber 11 is provided with an air extractor 2 which can pump the cleaning chamber 11 to vacuum. Specifically, the plasma source 12 is provided with an interface, a gas source suitable for being connected with an inert gas, such as argon or other inert gases, is introduced into the interface, and meanwhile, the plasma source 12 is connected with a high-voltage power supply, and the inert gas is excited by the high-voltage power supply, so that a plasma beam is generated.
The wafer is cleaned by using the plasma, a large number of pipelines and joints are not required to be installed in the equipment, the maintenance time and cost in the later period of the equipment are reduced, meanwhile, the harm of an acid solvent to a human body can be avoided, and the secondary corrosion of the acid solution to the wafer can also be avoided. And for pollutants strongly remained on the surface of the wafer, the surface of the wafer is bombarded and cleaned by plasma, so that the pollutants are removed in a mode of directly contacting the surface of the wafer by using a rolling brush for friction, and the cleaning is green and nondestructive. And because the plasma volume is less than the water molecule, the plasma can penetrate into the wafer micro-pores, so that the ion bombardment cleaning within a certain thickness of the surface of the wafer can be carried out, and the cleaning effect is improved.
The plasma beam generated by the plasma source 12 is inclined with respect to the wafer, and after the plasma beam bombards the surface of the wafer, impurities on the surface of the wafer and the plasma beam are discharged at a certain angle under the reflection action of the wafer, and if the plasma beam vertically bombards the surface of the wafer, the bombarded plasma beam and impurities on the surface of the wafer still keep a vertical state with respect to the wafer, and when the weight of the plasma beam and impurities are superposed to a certain degree, the impurities easily fall back to the surface of the wafer again, which results in a reduced cleaning effect. In a preferred embodiment, the plasma source 12 is angled at 45 degrees from horizontal.
Specifically, the pumping part 2 is located at the top end of the cleaning chamber 11, a notch is arranged in front of the plasma beam reflection path on the cleaning chamber 11, the pumping part 2 includes a pumping hole 21 communicated with the notch, and the plasma beam generated by the plasma source 12 can reach the position of the pumping hole 21 after being reflected by the wafer. When the air pumping part 2 works, the bombarded plasma beam and the bombarded impurities can be discharged out of the cleaning chamber 11 in time, so that the cleaning effect of the wafer is enhanced.
In this embodiment, the air pumping part 2 may adopt a molecular pump and/or a dry pump, the molecular pump is installed at the top end of the cleaning chamber 11, the cleaning chamber 11 is further provided with a flange interface, and the flange interface may be connected with the dry pump. The air pumping part 2 can not only realize the vacuum pumping of the cleaning chamber 11, but also discharge the bombarded plasma beam and the bombarded impurities out of the cleaning chamber 11 in time,
when the cleaning chamber 11 is pumped to a certain vacuum degree, argon is introduced into the interface of the plasma source 12 and is connected with a high-voltage power supply. Argon is introduced to generate glow discharge, and then the generated plasma beam bombards the surface of the wafer under the action of an electric field, so that substances remaining on the surface of the wafer are peeled off under the action of the high-energy plasma beam and move towards the direction of the extraction opening 21.
Referring to fig. 2 and 3, further, a wafer cleaning apparatus provided as an example of the present invention further includes a water removing unit 3 disposed at one side of the cleaning chamber 11 and capable of removing water from the wafer. And the water on the wafer is removed through the water removing component 3, so that the subsequent wafer is convenient to clean. If the surface of the wafer has moisture, the vacuum degree in the cleaning chamber 11 is not easy to reach more than 0.1Pa, which affects the generation of plasma and the time of vacuum pumping, and further affects the production cycle.
Specifically, the water removal assembly 3 includes a heating chamber 31 for placing the wafer and a heat source 32 for drying the water on the wafer, the heating chamber 31 is located at one side of the cleaning chamber 11, the heat source 32 is located in the heating chamber 31, and the heat source 32 is disposed near the process surface of the wafer. The water can be evaporated by heating, and the water on the wafer can be removed. Compared with other moisture removal modes, the heating operation is simple and convenient, no external force is used for driving, and the wafer structure is not easy to damage. In this embodiment, the heat source 32 is an armored heating wire, and a plurality of armored heating wires are fixed on one side of the heating chamber 31 in a row and are arranged close to the process surface of the wafer. By adopting the armored heating wire, the temperature can reach about 300 ℃ for baking the water vapor on the surface of the wafer, and the whole temperature control system is formed by matching the temperature sensor and the PID controller.
The heat source 32 may be other resistance heating wires. The heat source 32 may also be disposed outside the heating chamber 31, in which case the heating chamber 31 is made of a heat conductive material, and the heat of the heat source 32 is conducted into the heating chamber 31 by heat conduction of the heating chamber 31 to evaporate the water on the surface of the wafer.
Referring to fig. 2 and 3, further, a wafer cleaning apparatus provided as an example of the present invention further includes a transport assembly 4 that transports a wafer from the heating chamber 31 to the cleaning chamber 11. Through setting up transportation assembly 4, the wafer after being convenient for dry enters into washing chamber 11 in, is favorable to the automation of equipment for the washing process has guaranteed the takt.
Specifically, the transportation assembly 4 includes a wafer tray 41 on which the wafer can be placed and a transfer shaft 42 located at the bottom end of the wafer tray 41, the transfer shaft 42 is disposed in each of the heating chamber 31 and the cleaning chamber 11, and the transfer shaft 42 is rotatably connected to the heating chamber 31 and the cleaning chamber 11. The wafer tray 41 can hold wafers, and plays a role in protecting the wafers to a certain extent. The rotation of the transmission shaft 42 drives the wafer tray 41 to move, so as to realize the movement of the wafer, and the wafer enters the cleaning chamber 11 from the heating chamber 31.
Outside the heating chamber 31 and the washing chamber 11, a power member of a servo motor and/or a magnetofluid is provided, and the power member can transmit rotation to the transmission shaft 42 in a transmission manner, so that the transmission shaft 42 rotates. The surface of the transmission shaft 42 is provided with patterns for increasing friction, which is more beneficial to the movement of the wafer tray 41 when the transmission shaft 42 rotates. The specific lines of the patterns are not limited, the lines can be regular shapes or irregular shapes, and the patterns can be integrally formed on the transmission shaft 42 or obtained by later-stage lathe processing.
Wherein, the power member can also be arranged inside the heating chamber 31 and the cleaning chamber 11, and the transmission shaft 42 can also be replaced by a single transmission mode such as manipulator transmission, transmission bracket transmission and belt wheel transmission, or a combination of several transmission modes.
Referring to fig. 2 and 3, further, in the wafer cleaning apparatus provided as an example of the present invention, a connection port 5 for connecting the heating chamber 31 and the cleaning chamber 11 is provided at a side of the heating chamber 31 adjacent to the cleaning chamber 11, and a partition member 51 for controlling the connection port 5 to be opened or closed is provided at the connection port 5. After the wafer is dehydrated in the heating chamber 31, the partition assembly 51 is opened to allow the wafer to enter the cleaning chamber 11. By providing the partition member 51, the plasma is prevented from being affected by the moisture entering the cleaning chamber 11.
Specifically, the partition assembly 51 includes a support 511, a valve plate 512, a valve rod and a seal 513, the support 511 is disposed at the bottom end of the connection port 5 and located between the heating chamber 31 and the cleaning chamber 11, the seal 513 is disposed at the positions of both sides of the valve plate 512 and connected to the heating chamber 31 and/or the cleaning chamber 11, and in this embodiment, the seal 513 is a rubber cushion. The support 511 is adapted to support the valve plate 512, and the valve stem is disposed on the valve plate 512 and adapted to drive the valve plate 512 to open or close. Because the valve plate 512 needs to be pushed and pulled frequently, the sealing performance of the valve plate 512 is weakened, and the sealing effect of the valve plate 512 is enhanced by the sealing element 513, so that the phenomenon that the generation of plasma is influenced because moisture in the heating chamber 31 enters the cleaning chamber 11 is avoided. Meanwhile, as shown in fig. 3, a gap is formed between the dewatering component 3 and the plasma cleaning component 1, and acts on the upper position of the valve plate 512, so that an area for lifting the valve plate 512 is provided, and the valve plate 512 can be manually driven and can also be lifted in a manner of matching the rotary table and the threads.
The heating chamber 31 and the cleaning chamber 11 are respectively provided with a gate valve 6 adapted for the entrance and exit of the wafer at the sides away from the connection port 5, and as shown in fig. 3, the gate valves 6 are provided at the left and right positions of the apparatus. The gate valve 6 of the heating chamber 31 and the gate valve 6 of the cleaning chamber 11 correspond to the position of the connection port 5, that is, after the wafer tray 41 is put in from the gate valve 6 side of the heating chamber 31, the wafer tray 41 is convenient to be conveyed out from the gate valve 6 side of the cleaning chamber 11.
As a variant of the present invention, the heating chamber 31 may be located below the cleaning chamber 11, and the transportation assembly 4 may adopt a robot in the prior art, and the wafer after drying is grabbed from the heating chamber 31 into the cleaning chamber 11 by grabbing, moving and lifting of the robot, so as to clean the wafer. Or the transportation component 4 adopts a lifter in the prior art, at this time, the lifter is only arranged in the heating chamber 31, the lifter can lift up the dried wafer and transport the wafer into the cleaning chamber 11, the cleaning chamber 11 is internally provided with a clamping device, after clamping and fixing the wafer, the lifter returns into the heating chamber 31, at this time, the partition component 51 is closed, and the cleaning of the wafer is continuously completed.
The embodiments of the present invention are preferred embodiments of the present invention, and the scope of the present invention is not limited by these embodiments, so: all equivalent changes made according to the structure, shape and principle of the invention are covered by the protection scope of the invention.
Claims (10)
1. The wafer cleaning equipment is characterized by comprising a plasma cleaning assembly (1) for removing residues on the surface of a wafer, wherein the plasma cleaning assembly (1) comprises a cleaning chamber (11) capable of containing the wafer and a plasma source (12) which is positioned on the inner side of the cleaning chamber (11) and can generate plasma beams to bombard and clean the wafer, an installation chamber (13) is arranged at the top end of the cleaning chamber (11), the installation chamber (13) is communicated with the cleaning chamber (11), the plasma source (12) is positioned in the installation chamber (13), the moving direction of the plasma beams generated by the plasma source (12) is obliquely arranged relative to the wafer, and an air extractor (2) capable of pumping the cleaning chamber (11) to vacuum is arranged on one side of the cleaning chamber (11).
2. A wafer cleaning apparatus according to claim 1, wherein the gas exhaust member (2) is located at a top end of the cleaning chamber (11), a gap is provided in the cleaning chamber (11) in front of a reflection path of the plasma beam, and the gas exhaust member (2) includes a gas exhaust port (21) communicating with the gap.
3. A wafer cleaning apparatus according to claim 1, further comprising a water removal unit (3) disposed at a side of the cleaning chamber (11) for removing water from the wafer.
4. A wafer cleaning apparatus according to claim 3, wherein the water removal assembly (3) comprises a heating chamber (31) for placing the wafer and a heat source (32) for drying the wafer, the heat source (32) being located in the heating chamber (31).
5. A wafer cleaning apparatus according to claim 4, characterized in that the wafer cleaning apparatus further comprises a transport assembly (4) for transporting wafers from the heating chamber (31) to the cleaning chamber (11).
6. The wafer cleaning apparatus according to claim 5, wherein the transportation assembly (4) comprises a wafer tray (41) on which the wafer can be placed and a transfer shaft (42) located at the bottom end of the wafer tray (41), the transfer shaft (42) is disposed in each of the heating chamber (31) and the cleaning chamber (11), and the transfer shaft (42) is rotatably connected to the heating chamber (31) and the cleaning chamber (11).
7. A wafer cleaning apparatus as claimed in claim 6, characterized in that the surface of the transfer shaft (42) is provided with a pattern for increasing friction.
8. The wafer cleaning apparatus according to any one of claims 4 to 7, wherein a side of the heating chamber (31) adjacent to the cleaning chamber (11) is provided with a connection port (5) for connecting the heating chamber (31) and the cleaning chamber (11), and a partition member (51) for controlling the connection port (5) to be opened or closed is provided at the connection port (5).
9. The wafer cleaning apparatus according to claim 8, wherein the partition member (51) comprises:
a support (511) provided at the bottom end of the connection port (5) and located between the heating chamber (31) and the washing chamber (11);
a valve plate (512), said support (511) being adapted to support said valve plate (512);
a valve stem acting on the valve plate (512) and adapted to drive the valve plate (512) to open or close the connection port (5); and
and a sealing member (513) disposed at a position on both sides of the valve plate (512) and connected to the heating chamber (31) and/or the cleaning chamber (11).
10. Wafer cleaning apparatus according to claim 8, characterized in that the heating chamber (31) and the cleaning chamber (11) are provided with a gate valve (6) adapted for wafer entry and exit, respectively, on the side remote from the connection port (5).
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