CN111455455A - 具有在线监测功能的晶体生长装置 - Google Patents

具有在线监测功能的晶体生长装置 Download PDF

Info

Publication number
CN111455455A
CN111455455A CN202010132322.7A CN202010132322A CN111455455A CN 111455455 A CN111455455 A CN 111455455A CN 202010132322 A CN202010132322 A CN 202010132322A CN 111455455 A CN111455455 A CN 111455455A
Authority
CN
China
Prior art keywords
growth
detection
spectrometer
aligned
growth crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010132322.7A
Other languages
English (en)
Inventor
刘胜
东芳
高冰
周振
甘志银
王诗兆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan University WHU
Original Assignee
Wuhan University WHU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan University WHU filed Critical Wuhan University WHU
Priority to CN202010132322.7A priority Critical patent/CN111455455A/zh
Publication of CN111455455A publication Critical patent/CN111455455A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
    • G01K1/14—Supports; Fastening devices; Arrangements for mounting thermometers in particular locations
    • G01K1/143—Supports; Fastening devices; Arrangements for mounting thermometers in particular locations for measuring surface temperatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/62—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the ionisation of gases, e.g. aerosols; by investigating electric discharges, e.g. emission of cathode
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/05—Investigating materials by wave or particle radiation by diffraction, scatter or reflection
    • G01N2223/056—Investigating materials by wave or particle radiation by diffraction, scatter or reflection diffraction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/10—Different kinds of radiation or particles
    • G01N2223/101—Different kinds of radiation or particles electromagnetic radiation
    • G01N2223/1016—X-ray
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/602—Specific applications or type of materials crystal growth
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/646—Specific applications or type of materials flaws, defects

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

公开了一种具有在线监测功能的晶体生长装置，包括：生长坩埚，其上具有至少两个检测窗口，所述检测窗口通过阀门密封；透明密封腔，罩在所述检测窗口上在所述阀门打开时使所述生长坩埚处于密闭状态；光谱仪，位于所述生长坩埚外，其中光谱仪发射器对准所述至少两个检测口中的一个，光谱仪接收器对准所述至少两个检测口中的另一个；和/或XRD衍射仪，位于所述生长坩埚外，其中XRD发射器对准所述至少两个检测口中的一个，XRD接收器对准所述至少两个检测口中的另一个；和/或质谱仪，其探头位于所述生长坩埚内；和/或检测所述生长坩埚侧壁温度的测温仪。本发明装置可以在晶体生长过程中对元素、物质、晶格等与缺陷直接相关的信息进行监测。

Description

具有在线监测功能的晶体生长装置
技术领域
本公开涉及具有在线监测功能的晶体生长装置，可用于碳化硅生长的监控。
背景技术
碳化硅作为第三代半导体材料具有宽带隙、高临界击穿电场、高热导率、高载流子饱和浓度、化学性能稳定、高硬度、抗磨损等特点，使得它在军用和航天领域的高温、高频、大功率光电器件方面具有优越的应用价值，成为当今最受关注的新型半导体材料。
建立在碳化硅基础上的整个产业和技术的发展，离不开高质量的碳化硅晶片。目前，碳化硅晶体材料的制备方法有“溶液生长法”、“升华再结晶”法、“改进升华”法、外延生长法。“升华再结晶”法是把碳化硅晶体颗粒置于石墨坩埚内，在Ar气氛中升温到2500℃以上进行热解升华，并将其输送到低温处进行有序再结晶成为高纯的碳化硅单晶体。不管是溶液生长，还是气相生长，都涉及到下面4个现象：1、物质的对流及扩散输运；2、温度场的分布；3、杂质的扩散及输运；4、点缺陷、线缺陷、面缺陷的生成。
碳化硅晶体的缺陷主要包括微管、位错、层错、多型性、异质包裹物、小角度晶界和平面六方空洞等。这些晶体缺陷的存在主要有以下两方面的原因：籽晶自身缺陷在晶体生长过程中进一步的延伸；单晶生长过程中由于偏离化学计量比而形成缺陷。由于一种缺陷的存在会诱发其他缺陷产生，因此对这些缺陷进行研究并且在晶体生长过程中进行有效控制，对提高碳化硅晶体质量非常重要。同时，在目前碳化硅生长过程中存在非常严重的现象为碳化现象，且其形成机理不是很明确，因此，结合多种检测手段监测碳化硅生长过程的演变细节十分重要。在碳化硅生长设备中集成测量仪难度较大，原因在于碳化硅生长炉内部温度在碳化硅晶体处的温度为2500度，并温度成梯度递减，各类监测设备与生长炉集成具有很大挑战。
发明内容
本发明提供一种具有在线监测功能的晶体生长装置，有效监测晶体生长过程。
根据本发明实施例的一方面，提供一种晶体生长装置，包括：
生长坩埚，其上具有至少两个检测窗口，所述检测窗口通过阀门密封；
透明密封腔，罩在所述检测窗口上在所述阀门打开时使所述生长坩埚处于密闭状态；
光谱仪，位于所述生长坩埚外，其中光谱仪发射器对准所述至少两个检测口中的一个，光谱仪接收器对准所述至少两个检测口中的另一个；和/或
XRD衍射仪，位于所述生长坩埚外，其中XRD发射器对准所述至少两个检测口中的一个，XRD接收器对准所述至少两个检测口中的另一个；和/或
质谱仪，其探头位于所述生长坩埚内。
在上述的晶体生长装置，还包括检测所述生长坩埚侧壁温度的测温仪。
在上述的晶体生长装置，所述测温仪位于垂直升降装置上。
本发明的具有在线监测功能的晶体生长装置可以在晶体生长过程中对元素、物质、晶格等与缺陷直接相关的信息进行监测。本发明的晶体生长装置可以在晶体生长过程中，减小位错密度、降低堆积层错，减少微管的形成，实现低缺陷晶体生长。
附图说明
下面结合附图和具体实施方式对本发明作进一步详细说明。
图1示出了根据本发明的一个实施例的具有在线监测功能的晶体生长装置的结构示意图。
附体标记说明：
1-籽晶；
2-线圈；
3-晶体原料；
4-冷却室；
5-移动杆；
6-换气孔；
7-生长坩埚；
8-光谱仪发射器；
9-XRD发射器；
10-质谱仪；
11-质谱仪探头；
12-XRD接收器；
13-光谱仪接收器，
14-测温仪；
15-透明密封腔；
16-密封阀门；
17-密封阀门。
具体实施方式
本发明的具有在线监测功能的晶体生长装置可用于碳化硅、蓝宝石、氮化镓、InGaN、AlGaN、金刚石、氮化铝、硅、Ga2O3、低维材料、或上述多种材料组合的晶体的生长。
如图1，晶体生长装置的生长坩埚7上具有至少两个检测窗口，所述检测窗口通过阀门16，17密封。透明密封腔15罩在所述检测窗口上，以便在所述阀门打开时使生长坩埚7处于密闭状态。透明密封腔15可采用高温石英制成。
生长坩埚7外设有光谱仪，所述光谱仪采用激光诱导发射光谱检测技术。光谱仪发射器8对准所述至少两个检测窗口中的一个，光谱仪接收器13对准所述至少两个检测口中的另一个。所述检测窗口上的阀门16，17打开后，光谱仪发射器8发射的光谱通过透明密封腔15、所述至少两个检测窗口中的所述一个入射到晶体薄膜表面，使材料气化并电离成等离子体与蒸汽混合物，等离子体发出的光信号经过所述至少两个检测窗口中的所述另一个、透明密封腔15被光谱仪接收器13接收，形成对籽晶1上沉积物的物质成分的监测过程。此外，还可使用所述光谱仪对生长坩埚7内升华气体的元素成分进行实时监测。
生长坩埚7外还可设有XRD衍射仪，XRD衍射仪可以实现晶体生长的原位 X射线表征测试，包括X射线衍射，X射线CTR散射(晶体截断面)，和X射线反射率等。XRD发射器9对准所述至少两个检测口中的一个，XRD接收器12 对准所述至少两个检测口中的另一个。所述检测窗口上的阀门16，17打开后， XRD发射器9发射的X射线通过透明密封腔15、所述至少两个检测窗口中的所述一个入射到晶体薄膜上，XRD接收器12通过透明密封腔15、所述至少两个检测窗口中的所述另一个获得衍射信息，其中根据生长过程中薄膜表面的反射率的变化来反映晶体薄膜厚度的变化和表面粗糙度，监测生长物质的晶格结构，从而监测缺陷的生长过程，监测晶体的残余应力，为设备优化降低缺陷进行指导。
生长坩埚7外还可设置质谱仪10，质谱仪10的探测头11伸入生长坩埚7 内进行探测，实现对晶体生长过程中升华气体的成分含量的检测。为保持生长坩埚7内的密封度和所需压强，探测头11和坩埚7接触处可采用密封压圈或密封法兰或密封胶来密封。
生长坩埚7外还可设置检测生长坩埚7侧壁温度的测温仪14。测温仪14可安装在垂直升降装置上，实现不同高度处温度的检测。测温仪14发射探测射线从加热线圈2间隙处射向生长坩埚7表面，从而测量生长坩埚7侧壁的温度，并实时将温度反馈给线圈控制系统，调节不同位置处线圈2的温度，保证生长坩埚 7内部温度的恒定。
本发明利用光谱仪和XRD衍射仪对形成的沉积层成分及晶粒结构进行实时检测，以逐层判断沉积的杂质成分和晶粒结构缺陷是否超标，同时利用质谱仪对升华的气体成分进行实时检测，判断气体的成分比例及是否有杂质气体混入，一旦发现杂质成分或晶粒结构缺陷超标，则停机调整设备，优化设备参数，实现晶体生长过程中质量和缺陷的控制。晶体生长完成后，通过移动杆5降至冷却室4 内，对晶体进行降温。

Claims (3)

1.一种晶体生长装置，其特征在于，包括：
生长坩埚，其上具有至少两个检测窗口，所述检测窗口通过阀门密封；
透明密封腔，罩在所述检测窗口上在所述阀门打开时使所述生长坩埚处于密闭状态；
光谱仪，位于所述生长坩埚外，其中光谱仪发射器对准所述至少两个检测口中的一个，光谱仪接收器对准所述至少两个检测口中的另一个；和/或
XRD衍射仪，位于所述生长坩埚外，其中XRD发射器对准所述至少两个检测口中的一个，XRD接收器对准所述至少两个检测口中的另一个；和/或
质谱仪，其探头位于所述生长坩埚内。
2.根据权利要求1所述的晶体生长装置，其特征在于，还包括检测所述生长坩埚侧壁温度的测温仪。
3.根据权利要求2所述的晶体生长装置，其特征在于，所述测温仪位于垂直升降装置上。
CN202010132322.7A 2020-02-29 2020-02-29 具有在线监测功能的晶体生长装置 Pending CN111455455A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010132322.7A CN111455455A (zh) 2020-02-29 2020-02-29 具有在线监测功能的晶体生长装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010132322.7A CN111455455A (zh) 2020-02-29 2020-02-29 具有在线监测功能的晶体生长装置

Publications (1)

Publication Number Publication Date
CN111455455A true CN111455455A (zh) 2020-07-28

Family

ID=71678371

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010132322.7A Pending CN111455455A (zh) 2020-02-29 2020-02-29 具有在线监测功能的晶体生长装置

Country Status (1)

Country Link
CN (1) CN111455455A (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113703411A (zh) * 2021-08-31 2021-11-26 亚洲硅业(青海)股份有限公司 多晶硅生长过程监测系统、方法及多晶硅生产系统
CN114318515A (zh) * 2021-12-16 2022-04-12 唤月照雪(厦门)科技有限责任公司 一种大尺寸碳化硅单晶的pvt生长装置
CN114324428A (zh) * 2021-12-29 2022-04-12 浙江大学杭州国际科创中心 一种原位监测物理气相沉积法生长单晶微观缺陷的方法
CN114935574A (zh) * 2022-05-17 2022-08-23 河北同光半导体股份有限公司 高纯碳化硅晶体包裹的检测方法及装置
CN115976490A (zh) * 2022-12-06 2023-04-18 上海铂世光半导体科技有限公司 一种cvd金刚石生长在线检测装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1388368A (zh) * 2001-05-27 2003-01-01 中国科学院安徽光学精密机械研究所 实时测量高温熔体法生长晶体固/液界面层结构的方法和高温热台
US20050191614A1 (en) * 2000-01-07 2005-09-01 Millenium Pharmaceuticals, Inc. High-throughput formation, identification and analysis of diverse solid forms
CN103698348A (zh) * 2013-12-16 2014-04-02 中国科学院合肥物质科学研究院 Gixrd技术原位实时测量晶体生长边界层微观结构的方法和微型晶体生长炉
CN104981485A (zh) * 2013-02-12 2015-10-14 艺康美国股份有限公司 用于控制不期望聚合反应的聚合反应抑制剂的在线监测

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050191614A1 (en) * 2000-01-07 2005-09-01 Millenium Pharmaceuticals, Inc. High-throughput formation, identification and analysis of diverse solid forms
CN1388368A (zh) * 2001-05-27 2003-01-01 中国科学院安徽光学精密机械研究所 实时测量高温熔体法生长晶体固/液界面层结构的方法和高温热台
CN104981485A (zh) * 2013-02-12 2015-10-14 艺康美国股份有限公司 用于控制不期望聚合反应的聚合反应抑制剂的在线监测
CN103698348A (zh) * 2013-12-16 2014-04-02 中国科学院合肥物质科学研究院 Gixrd技术原位实时测量晶体生长边界层微观结构的方法和微型晶体生长炉

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113703411A (zh) * 2021-08-31 2021-11-26 亚洲硅业(青海)股份有限公司 多晶硅生长过程监测系统、方法及多晶硅生产系统
CN114318515A (zh) * 2021-12-16 2022-04-12 唤月照雪(厦门)科技有限责任公司 一种大尺寸碳化硅单晶的pvt生长装置
CN114324428A (zh) * 2021-12-29 2022-04-12 浙江大学杭州国际科创中心 一种原位监测物理气相沉积法生长单晶微观缺陷的方法
CN114935574A (zh) * 2022-05-17 2022-08-23 河北同光半导体股份有限公司 高纯碳化硅晶体包裹的检测方法及装置
CN115976490A (zh) * 2022-12-06 2023-04-18 上海铂世光半导体科技有限公司 一种cvd金刚石生长在线检测装置
CN115976490B (zh) * 2022-12-06 2023-12-19 上海铂世光半导体科技有限公司 一种cvd金刚石生长在线检测装置

Similar Documents

Publication Publication Date Title
CN111455455A (zh) 具有在线监测功能的晶体生长装置
Hartmann et al. Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices
RU2485219C1 (ru) Устройство для производства монокристаллического нитрида алюминия, способ производства монокристаллического нитрида алюминия и монокристаллический нитрид алюминия
Bickermann et al. Faceting in AlN bulk crystal growth and its impact on optical properties of the crystals
Götz et al. Electronic and structural properties of GaN grown by hydride vapor phase epitaxy
Hartmann et al. Favourable growth conditions for the preparation of bulk AlN single crystals by PVT
Ohira et al. Fabrication of hexagonal GaN on the surface of β-Ga2O3 single crystal by nitridation with NH3
Bickermann et al. Growth of AlN bulk crystals on SiC seeds: Chemical analysis and crystal properties
Fischer et al. Properties of GaN grown at high rates on sapphire and on 6H–SiC
US5041186A (en) Method for manufacturing compound semiconductor single crystals using a hydrogen monitor gas
Luong et al. Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si (001) films using a GaP decomposition source
Islam et al. Direct measurement of the density and energy level of compensating acceptors and their impact on the conductivity of n-type Ga2O3 films
Liaw et al. GaN epilayers grown on 100 mm diameter Si (111) substrates
US5463977A (en) Method of and apparatus for epitaxially growing chemical compound crystal
Safvi et al. Effect of reactor geometry and growth parameters on the uniformity and material properties of GaNsapphire grown by hydride vapor-phase epitaxy
Pan et al. Epitaxial growth and characterization of p-type ZnO
Gottschalch et al. Epitaxial growth of rhombohedral β-and cubic γ-CuI
Shao et al. EBSD crystallographic orientation research on strain distribution in hydride vapor phase epitaxy GaN grown on patterned substrate
Chen et al. Microstructural and optical properties of high-quality ZnO epitaxially grown on a LiGaO 2 substrate
Glass et al. Improvements in production of CdZnTe crystals grown by the Bridgman method
Lukin et al. Heteroepitaxial growth of GaN on sapphire substrates by high temperature vapor phase epitaxy
Ju et al. In situ X-ray measurements of MOVPE growth of InxGa1− xN single quantum wells
Murthy et al. Residual impurities in GaN substrates and epitaxial layers grown by various techniques
US9447517B2 (en) Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon
Meissner et al. Characterisation of GaN crystals and epilayers grown from a solution at room pressure

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20200728

RJ01 Rejection of invention patent application after publication