CN111435691B - 一种叠层mwt太阳能电池组件及其制备方法 - Google Patents
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Abstract
本发明涉及一种叠层MWT太阳能电池组件，包括从下往上的底层正负对电极、MWT太阳能电池层、载流子复合层、第二太阳能电池层、顶层透明电极层以及表面栅线，在MWT太阳能电池组件中设置若干上下贯穿的贯通孔，在贯通孔内设置导电金属，导电金属将表面栅线与底层正负对电极中的其中一种电极导电连接，底层正负对电极中的另一种电极与MWT太阳能电池层导电连接。本发明还公开该叠层MWT太阳能电池组件的制备方法。本发明将太阳能电池的叠层技术与MWT技术进行结合，集合了MWT电池与叠层电池的优点，并克服了结合过程的多个难点，制造出更具优势的叠层MWT太阳能电池组件，具有更高的电池效率，更好的组件稳定性和可靠性，适用范围更广等优点。
Description
技术领域
本发明属于太阳能电池的制备技术领域，特别涉及一种叠层MWT太阳能电池组件及其制备方法。
背景技术
MWT(Metal Wrap-Through)金属缠绕式电池技术是将晶硅太阳能电池的发射极从正面穿过硅基体后引导至电池背面，将主栅线从传统的正面转移至背面，正面只保留金属细栅线，形成了发射极和基区的导出电极都位于电池背面的结构。MWT太阳能电池与传统太阳能电池相比，具有以下优点：(A).电池效率高：通过减少晶硅正面的栅线，减少了约3％的正面遮光损失，并降低了70％的串联电阻，从而提高组件功率。(B).组件稳定性和可靠性更好，避免了焊带的高温焊接带来的应力、焊接不良和隐裂等问题。(C).发电量更多：采用的金属箔导电线路额外增强了散热，降低了组件的实际工作温度，同样安装量情况下多发电2％～4％，进一步提高了电站的收益率。(D).外表更美观：消除了常规组件的单调的焊条外观，特别适合与建筑相结合。(E).更适合双玻结构：传统电池采用双玻结构封装时，电池片会承受比在单玻组件中更大的应力，隐裂和微裂纹风险更大；而MWT双玻组件的低应力优势更加明显。
另一方面，叠层电池技术可以增加电池组件的转换效率，突破理论极限。但是，太阳能电池的MWT技术和叠层技术能否结合，结合后的情况是怎么样的？有待进一步研究。
发明内容
本发明所要解决的技术问题在于，提供一种叠层MWT太阳能电池组件及其制备方法，将太阳能电池的叠层技术与MWT技术进行结合，克服结合过程中诸多的技术难点，得到更具优势的叠层MWT太阳能电池组件。
本发明是这样实现的，提供一种叠层MWT太阳能电池组件，包括从下往上的底层正负对电极、MWT太阳能电池层、载流子复合层、第二太阳能电池层、顶层透明电极层以及表面栅线，在所述MWT太阳能电池组件中设置若干上下贯穿的贯通孔，在所述贯通孔内设置导电金属，所述导电金属将表面栅线与底层正负对电极中的其中一种电极导电连接，所述底层正负对电极中的另一种电极与MWT太阳能电池层导电连接。
本发明是这样实现的，还提供一种如前所述的叠层MWT太阳能电池组件的制备方法，包括如下步骤：
步骤一、制备MWT太阳能电池层；
步骤二、在MWT太阳能电池层上表面制备载流子复合层；
步骤三、在载流子复合层的表面制备第二太阳能电池层；
步骤四、在第二太阳能电池层的表面制备顶层透明电极层；
步骤五、在顶层透明电极层上加工若干贯通孔贯穿已制备的各层，在所述贯通孔内沉积导电金属；
步骤六、在顶层透明电极层的表面制备表面栅线，所述表面栅线与导电金属的上端导电连接；
步骤七、在MWT太阳能电池层下表面沉积背电极层，在所述背电极层上加工出底层正负对电极，其中所述底层正负对电极中的其中一种电极与导电金属的下端导电连接，其另一种电极与MWT太阳能电池层导电连接。
与现有技术相比，本发明的叠层MWT太阳能电池组件及其制备方法，将太阳能电池的叠层技术与MWT技术进行结合，集合了MWT电池与叠层电池的优点，并克服了结合过程的多个难点，制造出更具优势的叠层MWT太阳能电池组件，具有更高的电池效率，更好的组件稳定性和可靠性，适用范围更广等优点。
附图说明
图1为本发明的叠层MWT太阳能电池层一较佳实施例的内部结构示意图；
图2为图1制备的叠层MWT太阳能电池层实物示意图；
图3为普通的钙钛矿电池、普通的晶硅电池和本发明的叠层电池的电压-电流特性的对比曲线图。
具体实施方式
为了使本发明所要解决的技术问题、技术方案及有益效果更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
请参照图1所示，本发明叠层MWT太阳能电池组件的较佳实施例，包括从下往上的底层正负对电极1和2、MWT太阳能电池层3、载流子复合层4、第二太阳能电池层5、顶层透明电极层6以及表面栅线7。在所述MWT太阳能电池组件中设置若干上下贯穿的贯通孔8，在所述贯通孔8内设置导电金属。所述导电金属将表面栅线7与底层正负对电极中的其中一种电极导电连接，所述底层正负对电极中的另一种电极与MWT太阳能电池层3导电连接。所述底层正负对电极包括正电极1和负电极2。
其中，所述第二太阳能电池层5为钙钛矿太阳能电池层、有机太阳能电池层、固态染料敏化电池层或量子点电池层中的任意一种。
本发明将太阳能电池的MWT技术与叠层技术有机地结合在一起，至少克服了以下技术难点：1).复合层的选择和沉积。2).钙钛矿层在晶硅基底的结晶控制。3).钙钛矿层的优化以达到电流匹配。4).激光打孔和划槽隔绝的对准及重复性。5).孔的大小及形状的控制。6).激光及硅衬底及钙钛矿层造成的损伤及孔内金属的填充等。
本发明还公开一种如前所述的叠层MWT太阳能电池组件的制备方法，包括如下步骤：步骤一、制备MWT太阳能电池层。
步骤二、在MWT太阳能电池层上表面制备载流子复合层。
步骤三、在载流子复合层的表面制备第二太阳能电池层。
步骤四、在第二太阳能电池层的表面制备顶层透明电极层。
步骤五、在顶层透明电极层上加工若干贯通孔贯穿已制备的各层，在所述贯通孔内沉积导电金属。
步骤六、在顶层透明电极层的表面制备表面栅线，所述表面栅线与导电金属的上端导电连接。
步骤七、在MWT太阳能电池层下表面沉积背电极层，在所述背电极层上加工出底层正负对电极，其中所述底层正负对电极中的其中一种电极与导电金属的下端导电连接，其另一种电极与MWT太阳能电池层导电连接。
下面结合具体实施例来进一步说明本发明的叠层MWT太阳能电池组件的制备方法。
实施例1
本发明的叠层MWT太阳能电池组件的制备方法的实施例，包括如下步骤：
1)、制备MWT太阳能电池层3的步骤包括：将清洁后的P型硅片放入扩散管中进行磷扩散，P型硅片选用电阻率为2Ω·cm的硅片，形成N型扩散层，N型扩散层的方块电阻为75Ω/sq。采用抛光方式去除P型硅片背面在扩散过程中形成的磷硅玻璃，在该面采用层沉积方式为等离子体增强型化学气相沉积(PECVD)方法沉积一层氧化铝层作为背面钝化层9，背面钝化层9的厚度为50nm。氧化铝层与P型硅片接触，形成一个内建电场，降低少数载流子的复合率。
2)、在MWT太阳能电池层3上表面采用磁控溅射法沉积制备一层厚度为100nm的ITO作为载流子复合层4。
3)、在载流子复合层4的表面制备第二太阳能电池层5——钙钛矿太阳能电池层，包括如下步骤：在该载流子复合层表面沉积厚度为20nm氧化镍作为空穴传输层。然后采用溶液旋涂法，将碘化铅和碘甲胺的等比例DMF:DMSO(4:1)溶液，刮涂在空穴传输层表面。并在100摄氏度退火10分钟，形成结晶良好的钙钛矿薄膜层。然后采用刮涂法沉积厚度为70nm的PCBM薄膜作为电子传输层。
4)、在电子传输层的表面采用磁控溅射法沉积制备厚度为100nm的ITO作为顶层透明电极层6。
5)、采用红色激光在顶层透明电极层6上钻出多个4×4mm形式的贯通孔8贯穿已制备的各层，该贯通孔8直径200um，孔距38.5mm。在所述贯通孔8内沉积导电金属，将顶层透明电极层6通过电连接引到P型硅片的背面。
6)、在顶层透明电极层6的表面沉积制备表面栅线7，所述表面栅线为导电金属栅线。所述表面栅线7与贯穿孔8内的导电金属的上端导电连接。
7)、再用绿色激光在背面钝化层9上加工若干线槽或圆孔，所述线槽或圆孔的底部露出P型硅片。所述线槽的线宽为10～100um，线距100～2000um，所述圆孔的直径为5～500um，孔距为10～2000um。在背面钝化层9的下表面沉积背电极层，在所述背电极层上加工出底层正负对电极，其中正电极1与贯穿孔8内的导电金属的下端导电连接，在所述线槽或圆孔内沉积有背电极层的导电材料，形成负电极2，该负电极2与P型硅片的背面导电连接。
请参照图2所示，为本实施例制备的叠层MWT太阳能电池组件的实物示意图。
请参看附图3所示，为普通的钙钛矿电池、普通的晶硅电池和本发明的叠层电池的电压-电流特性的对比曲线图，可以看出，相比于普通的钙钛矿电池和普通的晶硅电池，本发明的叠层电池的输出电压得到了明显的增加。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。
Claims (1)
1.一种叠层MWT太阳能电池组件的制备方法，其特征在于，所述叠层MWT太阳能电池组件包括从下往上的底层正负对电极、MWT太阳能电池层、载流子复合层、第二太阳能电池层、顶层透明电极层以及表面栅线，在所述MWT太阳能电池组件中设置若干上下贯穿的贯通孔，在所述贯通孔内设置导电金属，所述导电金属将表面栅线与底层正负对电极中的其中一种电极导电连接，所述底层正负对电极中的另一种电极与MWT太阳能电池层导电连接，所述叠层MWT太阳能电池组件的制备方法包括如下步骤：
步骤一、制备MWT太阳能电池层的步骤包括：将清洁后的P型硅片放入扩散管中进行磷扩散，P型硅片选用电阻率为2Ω·cm的硅片，形成N型扩散层，N型扩散层的方块电阻为75Ω/sq，采用抛光方式去除P型硅片背面在扩散过程中形成的磷硅玻璃，在该面采用层沉积方式为等离子体增强型化学气相沉积（PECVD）方法沉积一层氧化铝层作为背面钝化层，背面钝化层的厚度为50nm；
步骤二、在MWT太阳能电池层上表面采用磁控溅射法沉积制备一层厚度为100nm的ITO作为载流子复合层；
步骤三、在载流子复合层的表面制备第二太阳能电池层——钙钛矿太阳能电池层，包括如下步骤：在该载流子复合层表面沉积厚度为20nm氧化镍作为空穴传输层，然后采用溶液旋涂法，将碘化铅和碘甲胺的等比例DMF:DMSO(4:1)溶液，刮涂在空穴传输层表面，并在100摄氏度退火10分钟，形成结晶良好的钙钛矿薄膜层，然后采用刮涂法沉积厚度为70nm的PCBM薄膜作为电子传输层；
步骤四、在第二太阳能电池层的电子传输层的表面采用磁控溅射法沉积制备厚度为100nm的ITO作为顶层透明电极层；
步骤五、采用红色激光在顶层透明电极层上钻出多个4×4mm形式的贯通孔贯穿已制备的各层，该贯通孔直径200um，孔距38.5mm，在所述贯通孔内沉积导电金属，将顶层透明电极层通过电连接引到P型硅片的背面；
步骤六、在顶层透明电极层的表面沉积制备表面栅线，所述表面栅线为导电金属栅线，所述表面栅线与贯穿孔内的导电金属的上端导电连接；
步骤七、再用绿色激光在背面钝化层上加工若干线槽或圆孔，所述线槽或圆孔的底部露出P型硅片，所述线槽的线宽为10~100um，线距100~2000um，所述圆孔的直径为5~500um，孔距为10~2000um，在背面钝化层的下表面沉积背电极层，在所述背电极层上加工出底层正负对电极，其中正电极与贯穿孔内的导电金属的下端导电连接，在所述线槽或圆孔内沉积有背电极层的导电材料，形成负电极，该负电极与P型硅片的背面导电连接。
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