CN111433915A - Display screen, manufacturing method thereof and display device - Google Patents
Display screen, manufacturing method thereof and display device Download PDFInfo
- Publication number
- CN111433915A CN111433915A CN201780097403.4A CN201780097403A CN111433915A CN 111433915 A CN111433915 A CN 111433915A CN 201780097403 A CN201780097403 A CN 201780097403A CN 111433915 A CN111433915 A CN 111433915A
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- layer
- substrate
- display screen
- retaining wall
- wall body
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- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000010410 layer Substances 0.000 claims abstract description 152
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000005538 encapsulation Methods 0.000 claims abstract description 12
- 239000002346 layers by function Substances 0.000 claims abstract description 7
- 239000010409 thin film Substances 0.000 claims description 25
- 230000000903 blocking effect Effects 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 11
- 238000000059 patterning Methods 0.000 claims description 8
- 238000004806 packaging method and process Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 description 4
- 239000011368 organic material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
A display screen comprises a substrate (10), a light-emitting functional layer (14) arranged on the substrate (10) and an encapsulation layer (18) for encapsulating the light-emitting functional layer (14), wherein a retaining wall (19) surrounding the encapsulation layer (18) is arranged on an edge area (B) on the substrate (10), a groove (13) is formed in the edge area (B) of the substrate (10), the retaining wall (19) covers the groove (13), and the end part of the retaining wall (19) connected with the substrate (10) is embedded into the groove (13).
Description
The invention relates to the technical field of flexible display, in particular to a display screen, a display screen manufacturing method and display equipment.
The existing Organic light-emitting diode (O L ED) display screen has self-luminescence, thin thickness and can be rolled and folded, so that the packaging method of the O L ED device is advocated, so as to realize the sealing of the O L ED device, in general, an auxiliary structure needs to be arranged at the edge region in the packaging process to realize the packaging precision, and the narrow frame of the frame region of the display screen is difficult to ensure.
Disclosure of Invention
The embodiment of the invention provides a display screen with a narrow frame and display equipment.
The display screen comprises a substrate, a luminous function layer arranged on the substrate and an encapsulation layer encapsulating the luminous function layer,
be provided with on the marginal area on the base plate and center on the barricade of packaging layer, be equipped with the slot on the marginal area of base plate, wherein, the barricade covers on the slot just the tip that barricade and base plate are connected imbeds in the slot.
The retaining wall and the groove are combined in a laminated mode, so that ductile cracks of the inorganic layer are effectively prevented, and the device failure caused by water vapor invasion is avoided; and the overflow of the molten organic material of the packaging layer in the film forming process can be effectively avoided, the frame can be made as small as possible, and the purpose of narrow frame or no frame is realized.
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic plan view of the inner side view of the display screen provided by the present invention.
Fig. 2 is a schematic cross-sectional view of an internal detailed structure of the display screen shown in fig. 1.
FIG. 3 is a schematic diagram of a side view of the interior of another embodiment of the display screen shown in FIG. 1.
FIG. 4 is a flowchart illustrating a method for manufacturing a display panel according to the present invention.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
The embodiment of the invention provides a display screen and display equipment, wherein the display screen is a flexible screen comprising an organic light-emitting diode, the display equipment comprises the display screen or the display screen and a touch panel, and the display equipment can be vehicle-mounted equipment, wearable equipment or portable terminal equipment.
Referring to fig. 1, the display panel in this embodiment is an Active Matrix/Organic L light Emitting Diode (AMO L ED) display panel, and includes a substrate 10, where the substrate 10 includes a display area a and an edge area B, the substrate 10 is a flexible substrate or a glass substrate, in this embodiment, the substrate 10 is made of a flexible material, and the display panel is a flexible display panel, the display area a of the substrate 10 corresponds to the display area of the display panel, the edge area B corresponds to the edge area of the display panel, and (Organic light-Emitting diodes) O L ED devices, TFT devices, and the like are disposed in the display area of the display panel and are supported by the substrate.
And a light emitting function layer 14 and an encapsulation layer 18 for encapsulating the light emitting function layer are arranged on the substrate 10 in the display area a. The encapsulation layer 18 is formed by stacking an inorganic layer, an organic layer and an inorganic layer, the inorganic layer is usually formed by SiOx, SiNx or a combination of other inorganic materials, and the organic layer is formed by uniformly coating a water-vapor-blocking molten insulating material on the light-emitting functional layer 14 by using the ijp (inject printer) technology.
Be located the marginal zone B of base plate 10, be equipped with on the base plate 10 around retaining wall 19 that encapsulation layer 18 set up, base plate 10 edge orientation retaining wall 19 is equipped with slot 13, wherein, retaining wall 19 pile up in the top of slot 13 covers slot 13, the tip that retaining wall 19 and base plate are connected is embedded into fill slot 13 in the slot 13.
The retaining wall 19 is used for preventing the overflow phenomenon of the molten insulating material due to the material flow characteristic when the packaging layer 18 is packaged, and the groove 13 is used for preventing the ductile crack from reaching the groove 13 and stopping when the flexible screen is stretched or compressed to enable the inorganic layer to generate the ductile crack, so that the damage of an O L ED device and a TFT device due to the fact that the moisture enters is avoided.
As shown in fig. 2, in this embodiment, the retaining wall 19 includes a first retaining wall 191 and a second retaining wall 192 stacked on the first retaining wall 191 and far from the substrate surface, and the light-emitting functional layer 14 includes a thin film transistor layer 15, a flat layer 155 covering the thin film transistor layer 15, and a pixel defining layer 16 and a light-emitting layer 17 sequentially stacked on the flat layer 155. In this embodiment, the first blocking body 191 and the flat layer 155 are located on the same layer and manufactured by the same process, and the second blocking body 192 and the pixel defining layer 16 are located on the same layer and manufactured by the same process, so that in the manufacturing process, no new process or step is needed, and only the pattern positions of the first blocking body 191 and the second blocking body 192 need to be defined when the pattern is defined on the flat layer.
In this embodiment, the light emitting layer 17 includes an anode layer 170, a cathode layer 172, and a light emitting source 171 embedded in the pixel defining layer 16, the anode layer 170 is disposed on the surface of the planarization layer 16 away from the thin film transistor layer 15 and electrically connected to the thin film transistor layer, and the cathode layer 172 covers the pixel defining layer 16. The light emitting source 171 is embedded in the surface of the pixel defining layer 16 away from the planarization layer and exposes the surface of the pixel defining layer 16.
In this embodiment, the trenches 13 are disposed side by side, the thin-film transistor layer 15 includes a gate insulating layer 151 stacked on the substrate 10, and the trenches 13 are disposed on the gate insulating layer 151 and penetrate through the gate insulating layer 151. The end portion of the first blocking wall 191 connected to the substrate 10 encapsulates the trench 13, and the rest portion is connected to the surface of the gate insulating layer 151, and the blocking wall 19 is connected to the trench 13 to increase the connection area, thereby ensuring the stability of the substrate 10. Further, the first blocking body 191 is removed from a portion connected to the trench 13, and the remaining portion is connected to the gate insulating layer 151 as a curved surface, so that the bonding force between the first blocking body 191 and the gate insulating layer 151 is increased.
The thin film transistor layer 15 includes a plurality of thin film transistors, each of the thin film transistors includes a gate insulating layer, a gate covered on the surface of the substrate 10 by the gate insulating layer 151, an active layer formed on the surface of the gate insulating layer 151 and corresponding to the gate, and source and drain electrodes disposed at intervals and connected to two opposite sides of the active layer. The insulating layer covers a plurality of thin film transistors. The planarization layer 155 is stacked on the surface of the insulating layer.
As shown in fig. 3, further, a support pillar (not shown) is disposed on a surface of the pixel defining layer 16, a support 193 is formed on a surface of the second blocking body 192 away from the first blocking body 191, the support 193 is formed in the same process as the support pillar 161, and the support 193 can better prevent the overflow phenomenon of the molten insulating material due to the material flow property when the encapsulating layer 18 is encapsulated.
Referring to fig. 4, an embodiment of the invention provides a method for manufacturing a display screen, including,
in step S1, a thin-film transistor layer 15 is formed on the substrate 10, the thin-film transistor layer 15 includes a gate insulating layer 151, and the trench 13 is formed on the gate insulating layer 151 located in the edge region B of the substrate 10.
In this step, a gate electrode is formed on the surface of the substrate 10 through a patterning process, and an active layer, a source electrode, and a drain electrode are formed through the patterning process after the gate insulating layer is coated, thereby forming a plurality of thin film transistors. An insulating material is coated to form an insulating layer covering the thin film transistor. The patterning process comprises coating, masking, exposing, etching, developing and other process technologies.
Step S2, coating a planarization material layer on the thin-film transistor layer 15 and the edge of the gate insulating layer 151, and patterning the planarization material layer to form a planarization layer 155 and a first blocking body 191 at the edge region of the substrate 10; wherein the first dam 191 encapsulates the trench 13 towards the end of the substrate. In this step, the patterning of the flat material layer to form the first blocking body 191 may be performed by etching.
In step S3, an organic material layer is coated on the surface of the planarization layer 155 and the surface of the first blocking body 191 away from the substrate, and the organic material layer is patterned to form the pixel defining layer 16 and the second blocking body 192 stacked on the first blocking body 191. The dam 19 is formed at the same time as the planarization layer and the pixel defining layer 16 are formed through the steps S2 and S3, so that the quality of the display panel is ensured without adding an additional process and an increase in manufacturing cost. In this step, before the pixel defining layer is applied, an anode layer of the light emitting layer 17 needs to be formed on the planarization layer. The anode layer is arranged on the surface of the flat layer far away from the thin film transistor layer and is electrically connected with the thin film transistor layer,
in step S4, the light-emitting layer 17 is formed on the planarization layer 155 and on the pixel defining layer 16. The light emitting layer 17 includes the anode layer, a cathode layer, and a light emitting source embedded in the pixel defining layer 16, and the cathode layer covers the pixel defining layer 16.
In step S5, an encapsulation layer 18 encapsulating the pixel defining layer 16 and the light emitting layer 17 is formed. In this step, the encapsulation layer 18 is formed by using a thin film encapsulation technique.
Before forming the encapsulation layer 18 encapsulating the pixel defining layer 16 and the light emitting layer 17, the method further includes forming a plurality of support pillars arranged at intervals on the pixel defining layer 16, wherein the support pillars are formed by a patterning process, and simultaneously, a support body is formed on the surface of the second blocking wall 192, which is far away from the first blocking wall 191, and the support body and the support pillars are made of the same material and are formed in the same layer through the same process step.
According to the display screen manufacturing method provided by the embodiment of the invention, the retaining wall is formed on the premise of not increasing the process steps so as to prevent the glue overflow phenomenon of the packaging layer in the manufacturing process, the width of the frame area occupying the display screen is not increased, and the narrow frame effect is realized.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (10)
- A display screen is characterized by comprising a substrate, a light-emitting functional layer arranged on the substrate and an encapsulation layer encapsulating the light-emitting functional layer,be provided with on the marginal area on the base plate and center on the barricade of packaging layer, still be equipped with the slot on the marginal area of base plate, wherein, the barricade covers just on the slot the tip that barricade and base plate are connected is embedded into in the slot.
- The display screen of claim 1, wherein the retaining wall comprises a first retaining wall body and a second retaining wall body stacked on the first retaining wall body and far away from the surface of the substrate, and the light-emitting functional layer comprises a thin film transistor layer, a flat layer covering the thin film transistor layer, and a pixel defining layer and a light-emitting layer sequentially stacked on the flat layer;the first blocking wall body and the flat layer are positioned on the same layer and manufactured by the same process, and the second blocking wall body and the pixel defining layer are positioned on the same layer and manufactured by the same process.
- A display screen as claimed in claim 1 or 2, wherein a support is formed on the surface of the second retaining wall body away from the first retaining wall body.
- The display screen of claim 3, wherein the pixel definition layer is provided with support pillars, and the support body and the support pillars are formed in the same process.
- The display screen of claim 2, wherein the plurality of trenches are disposed side-by-side, the thin-film transistor layer includes a gate insulating layer stacked on the substrate, and the plurality of trenches are disposed on and through the gate insulating layer.
- The display screen of claim 2, wherein the end portion of the first blocking wall connected to the substrate partially encapsulates the trench, and the other portion is curved and connected to the gate insulating layer.
- The display screen of claim 2, wherein the light emitting layer comprises an anode layer, a cathode layer and a light emitting source embedded in the pixel definition layer, the anode layer is disposed on the surface of the planarization layer away from the thin film transistor layer and electrically connected to the thin film transistor layer, and the cathode layer covers the pixel definition layer.
- A display screen according to any one of claims 1 to 7, wherein the substrate is a flexible substrate or a glass substrate.
- A manufacturing method of a display screen is characterized by comprising the steps of forming a thin film transistor layer on a substrate, wherein the thin film transistor layer comprises a grid electrode insulating layer, and a groove is formed in the grid electrode insulating layer located in the edge area of the substrate;coating a flat material layer on the thin film transistor layer and the edge of the grid insulating layer, and patterning the flat material layer to form a flat layer and a first blocking wall body located in the edge area of the substrate; wherein the first retaining wall covers the groove;coating a pixel material layer on the surface of the flat layer and the surface of the first retaining wall body far away from the substrate, and patterning the pixel material layer to form a pixel defining layer and a second retaining wall body stacked on the first retaining wall body;forming a light emitting layer on the planarization layer and the pixel defining layer;and forming an encapsulation layer for encapsulating the pixel defining layer and the light emitting layer.
- A display device characterized by comprising a display screen according to any one of claims 1 to 8.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/CN2017/119331 WO2019127203A1 (en) | 2017-12-28 | 2017-12-28 | Display screen, manufacture method thereof, and display device |
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CN111433915A true CN111433915A (en) | 2020-07-17 |
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CN201780097403.4A Pending CN111433915A (en) | 2017-12-28 | 2017-12-28 | Display screen, manufacturing method thereof and display device |
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WO (1) | WO2019127203A1 (en) |
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CN111192911B (en) * | 2020-02-19 | 2022-06-17 | 成都京东方光电科技有限公司 | Display panel and display device |
CN114122278A (en) * | 2020-08-28 | 2022-03-01 | 深圳市柔宇科技股份有限公司 | Display device and manufacturing method thereof |
CN114335374B (en) * | 2020-09-30 | 2024-06-04 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
CN112349867B (en) * | 2020-10-27 | 2024-04-23 | 京东方科技集团股份有限公司 | Display panel, preparation method thereof and display device |
CN115411216A (en) * | 2022-09-15 | 2022-11-29 | 惠科股份有限公司 | Display panel and manufacturing method thereof |
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CN106450038A (en) * | 2016-12-21 | 2017-02-22 | 上海天马微电子有限公司 | Display panel, manufacturing method thereof and display device |
CN106876428A (en) * | 2017-02-03 | 2017-06-20 | 上海天马微电子有限公司 | Flexible display panels, its preparation method and display device |
CN107068715A (en) * | 2017-03-28 | 2017-08-18 | 上海天马微电子有限公司 | A kind of preparation method of organic electroluminescence display panel, organic light-emitting display device and organic electroluminescence display panel |
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JP2004349640A (en) * | 2003-05-26 | 2004-12-09 | Seiko Epson Corp | Method of forming pattern, method of manufacturing device, device, electrooptic device, and electronic equipment |
US7741652B2 (en) * | 2008-03-07 | 2010-06-22 | Visera Technologies Company Limited | Alignment device and application thereof |
TW201513332A (en) * | 2013-09-24 | 2015-04-01 | Wintek Corp | Organic light emitting package structure and manufacturing method thereof |
CN106816457B (en) * | 2016-12-28 | 2019-08-02 | 上海天马微电子有限公司 | A kind of touch-control display panel and preparation method thereof, touch control display apparatus |
CN107123744B (en) * | 2017-04-27 | 2019-04-19 | 京东方科技集团股份有限公司 | A kind of encapsulating structure, display device and lighting device |
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2017
- 2017-12-28 CN CN201780097403.4A patent/CN111433915A/en active Pending
- 2017-12-28 WO PCT/CN2017/119331 patent/WO2019127203A1/en active Application Filing
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Publication number | Priority date | Publication date | Assignee | Title |
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CN106450038A (en) * | 2016-12-21 | 2017-02-22 | 上海天马微电子有限公司 | Display panel, manufacturing method thereof and display device |
CN106876428A (en) * | 2017-02-03 | 2017-06-20 | 上海天马微电子有限公司 | Flexible display panels, its preparation method and display device |
CN107068715A (en) * | 2017-03-28 | 2017-08-18 | 上海天马微电子有限公司 | A kind of preparation method of organic electroluminescence display panel, organic light-emitting display device and organic electroluminescence display panel |
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Application publication date: 20200717 |