WO2019127203A1 - Display screen, manufacture method thereof, and display device - Google Patents

Display screen, manufacture method thereof, and display device Download PDF

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Publication number
WO2019127203A1
WO2019127203A1 PCT/CN2017/119331 CN2017119331W WO2019127203A1 WO 2019127203 A1 WO2019127203 A1 WO 2019127203A1 CN 2017119331 W CN2017119331 W CN 2017119331W WO 2019127203 A1 WO2019127203 A1 WO 2019127203A1
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WIPO (PCT)
Prior art keywords
layer
retaining wall
substrate
display screen
thin film
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PCT/CN2017/119331
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French (fr)
Chinese (zh)
Inventor
邱昌明
王雨宁
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深圳市柔宇科技有限公司
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Application filed by 深圳市柔宇科技有限公司 filed Critical 深圳市柔宇科技有限公司
Priority to PCT/CN2017/119331 priority Critical patent/WO2019127203A1/en
Priority to CN201780097403.4A priority patent/CN111433915A/en
Publication of WO2019127203A1 publication Critical patent/WO2019127203A1/en

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/871Self-supporting sealing arrangements
    • H10K59/8722Peripheral sealing arrangements, e.g. adhesives, sealants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates
    • H10K77/111Flexible substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks

Definitions

  • the present invention relates to the field of flexible display technologies, and in particular, to a display screen, a display screen manufacturing method, and a display device.
  • OLED organic light-emitting diodes
  • the thin film package is a packaging method of the OLED device to realize the sealing of the OLED device.
  • the package structure needs to be provided with an auxiliary structure in the edge region to achieve the package precision, and it is difficult to ensure a narrow frame of the frame area of the display screen.
  • Embodiments of the present invention provide a display screen and a display device having a narrow frame.
  • the display screen of the present invention includes a substrate, a light emitting function layer disposed on the substrate, and an encapsulation layer encapsulating the light emitting function layer.
  • a retaining wall surrounding the encapsulating layer is disposed on an edge region of the substrate, and a groove is disposed on the edge region of the substrate, wherein the retaining wall covers the trench and the retaining wall is connected to the substrate The ends are embedded in the grooves.
  • the retaining wall and the groove laminate combination of the embodiment of the invention not only effectively block the ductile crack of the inorganic layer, but also avoid the device failure caused by the water vapor intrusion; and can effectively avoid the overflow of the molten organic material of the encapsulating layer during the film forming process, It is better to make the border as small as possible to achieve a narrow border or no border.
  • FIG. 1 is a schematic plan view showing an internal side view of a display screen provided by the present invention.
  • FIG. 2 is a schematic cross-sectional view showing the internal structure of the display screen shown in FIG. 1.
  • FIG. 3 is a plan view showing an internal side view of another embodiment of the display screen shown in FIG. 1.
  • FIG. 4 is a flow chart of a method of manufacturing a display screen of the present invention.
  • An embodiment of the present invention provides a display screen and a display device.
  • the display screen is a flexible screen including an organic light emitting diode.
  • the display device includes the display screen or a display screen and a touch panel, and the display device may be an in-vehicle device.
  • the display screen is specifically an Active Matrix/Organic Light Emitting Diode (AMOLED) display screen, and includes a substrate 10 including a display area A and an edge area. B.
  • the substrate 10 is a flexible substrate or a glass substrate.
  • the substrate 10 is made of a flexible material
  • the display screen is a flexible display screen.
  • the display area A of the substrate 10 corresponds to the display area of the display screen
  • the edge area B corresponds to the edge area of the display screen.
  • Organic light-emitting diodes (OLED devices), TFT devices, and the like are disposed in the display area of the display screen, and are all carried by the substrate.
  • the substrate 10 is provided with a light-emitting function layer 14 and an encapsulation layer 18 encapsulating the light-emitting function layer.
  • the encapsulation layer 18 is formed by a thin film encapsulation, which is formed by stacking an inorganic layer, an organic layer and an inorganic layer.
  • the inorganic layer is a combination of SiOx, SiNx or an inorganic material
  • the organic layer is formed by using an IJP (inject printer) technology in the luminescent functional layer.
  • 14 is uniformly coated with a molten insulating material which can block moisture.
  • the substrate 10 Located in the edge region B of the substrate 10, the substrate 10 is provided with a retaining wall 19 disposed around the encapsulating layer 18, and the edge of the substrate 10 is provided with a groove 13 toward the retaining wall 19, wherein A retaining wall 19 is stacked above the groove 13 and covers the groove 13, and an end of the retaining wall 19 connected to the substrate is embedded in the groove 13 to fill the groove 13.
  • the retaining wall 19 is used to block the phenomenon that the molten insulating material overflows due to material flow characteristics when the encapsulating layer 18 is packaged, and the groove 13 is used to prevent stretching or compression of the flexible screen to cause ductility of the inorganic layer. In the case of cracks, the ductile cracks will stop at the groove 13 and prevent moisture from entering, causing damage to the OLED device and the TFT device.
  • the retaining wall 19 of the embodiment of the present invention is laminated with the groove 13 and partially embedded with each other, which not only effectively blocks the ductile crack of the inorganic layer, but also avoids the device failure caused by water vapor intrusion; and can effectively prevent the encapsulating layer 18 from being formed during the film forming process. Overflow of medium melted organic material. The most important thing is to make the border as small as possible, to achieve a narrow border or no border.
  • the retaining wall 19 includes a first retaining wall body 191 and a second retaining wall body 192 laminated on the first retaining wall body 191 away from the surface of the substrate.
  • 14 includes a thin film transistor layer 15, a flat layer 155 covering the thin film transistor layer 15, and a pixel defining layer 16 and a light emitting layer 17 which are sequentially stacked on the flat layer 155.
  • the first retaining wall body 191 is formed in the same layer and in the same process as the flat layer 155
  • the second retaining wall body 192 is located on the same layer as the pixel defining layer 16 and is manufactured in the same process. In the manufacturing process, there is no need to newly add processes and steps, and it is only necessary to define the pattern positions of the first retaining wall body 191 and the second retaining wall body 192 when defining the pattern in the flat layer.
  • the luminescent layer 17 includes an anode layer 170, a cathode layer 172, and a illuminating source 171 embedded in the pixel defining layer 16.
  • the anode layer 170 is disposed on the flat layer 16 away from the thin film transistor layer 15.
  • the surface is electrically connected to a thin film transistor layer that covers the pixel defining layer 16.
  • the light source 171 is embedded on a surface of the pixel defining layer 16 away from the surface of the flat layer and exposing the pixel defining layer 16.
  • the trenches 13 are provided in plurality and are arranged side by side, and the thin film transistor layer 15 includes a gate insulating layer 151 laminated on the substrate 10, and a plurality of the trenches 13 are disposed on the gate electrode.
  • the insulating layer 151 is passed through the gate insulating layer 151.
  • An end portion of the first barrier wall 191 connected to the substrate 10 encloses the trench 13 , and the remaining portion is connected to the surface of the gate insulating layer 151 , and the retaining wall 19 is connected to the trench 13 to increase the connection.
  • the area ensures stability in combination with the substrate 10.
  • the first retaining wall 191 is removed from the portion connected to the trench 13 , and the remaining portion is curved with the gate insulating layer 151 to increase the first retaining wall 191 and the gate insulating layer 151 . Binding force.
  • the thin film transistor layer 15 includes a plurality of thin film transistors including the gate insulating layer, a gate covered by the gate insulating layer 151 on a surface of the substrate 10, and a gate insulating layer.
  • An active layer corresponding to the gate of the surface of the 151, a source and a drain disposed opposite to each other, and the source and the drain are respectively connected to opposite sides of the active layer.
  • the insulating layer covers a plurality of the thin film transistors.
  • the flat layer 155 is laminated on the surface of the insulating layer.
  • the surface of the pixel defining layer 16 is provided with a supporting pillar (not shown), and the second retaining wall body 192 is supported away from the surface of the first retaining wall body 191.
  • the body 193 is formed by the same process as the support column 161. The support body 193 can better prevent the molten insulating material from overflowing due to material flow characteristics when the package layer 18 is packaged.
  • an embodiment of the present invention provides a method for manufacturing a display screen, including
  • a thin film transistor layer 15 is formed on the substrate 10.
  • the thin film transistor layer 15 includes a gate insulating layer 151, and a trench 13 is formed on the gate insulating layer 151 of the edge region B of the substrate 10.
  • a gate electrode is formed on the surface of the substrate 10 by a patterning process, and after the gate insulating layer is coated, an active layer, a source and a drain are formed by a patterning process, thereby forming a plurality of thin film transistors.
  • the insulating material is coated to form an insulating layer covering the thin film transistor.
  • the patterning process includes coating, reticle, exposure, etching, development, and the like.
  • Step S2 coating a flat material layer on the thin film transistor layer 15 and the edge of the gate insulating layer 151, and patterning the flat material layer to form a flat layer 155 and a first block located at an edge region of the substrate 10.
  • patterning the flat material layer to form the first barrier wall 191 may be performed by etching.
  • Step S3 coating an organic material layer on the surface of the flat layer 155 and the surface of the first retaining wall body 191 away from the substrate, patterning the organic material layer to form the pixel defining layer 16 and laminating on the first retaining wall body 191
  • the second retaining wall 192 When the flat layer and the pixel defining layer 16 are formed by the step S2 and the step S3, the retaining wall 19 is formed, and the external process is not required, and the manufacturing cost is not increased, and the quality of the display screen is ensured.
  • the anode layer is disposed on the surface of the flat layer away from the thin film transistor layer and electrically connected to the thin film transistor layer.
  • a light-emitting layer 17 is formed on the flat layer 155 and the pixel defining layer 16.
  • the light emitting layer 17 includes the anode layer, the cathode layer, and a light emitting source embedded in the pixel defining layer 16, and the cathode layer covers the pixel defining layer 16.
  • step S5 an encapsulation layer 18 encapsulating the pixel defining layer 16 and the luminescent layer 17 is formed.
  • the encapsulation layer 18 is formed by a thin film encapsulation technique.
  • a second support wall 192 is formed with a support body away from the surface of the first retaining wall body 191, and the support body and the support post are formed of the same material in the same layer by the same process step.
  • the method for manufacturing the display screen according to the embodiment of the present invention forms a retaining wall without increasing the number of process steps to prevent the encapsulation layer from overflowing during the manufacturing process, and does not increase the width of the border portion of the display screen, thereby achieving a narrow bezel effect.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

Provided is a display screen, comprising a substrate (10), a light emitting function layer (14) provided on the substrate (10), and an encapsulation layer (18) for encapsulating the light emitting function layer (14), a retaining wall (19) around the encapsulation layer (18) is provided on an edge region (B) of the substrate (10), a groove (13) is arranged on the edge region (B) of the substrate (10), wherein, the retaining wall (19) covers the groove (13) and the end of the retaining wall (19) connected to the substrate (10) is embedded in the groove (13).

Description

显示屏及其制作方法,以及显示设备Display screen and its making method, and display device 技术领域Technical field
本发明涉及柔性显示技术领域,尤其涉及一种显示屏,显示屏制作方法,以及显示设备。The present invention relates to the field of flexible display technologies, and in particular, to a display screen, a display screen manufacturing method, and a display device.
背景技术Background technique
现有的有机发光二极管(Organic light-emitting diodes,OLED)显示屏具备自发光、厚度薄并可以翻卷折叠而被推崇。薄膜封装是OLED器件的封装方法,以实现OLED器件的密封,一般情况下封装过程中需要在边缘区设置辅助结构实现封装精度,难以保证显示屏的边框区域实现窄边框化。Existing organic light-emitting diodes (OLED) displays are self-illuminating, thin, and can be folded and folded. The thin film package is a packaging method of the OLED device to realize the sealing of the OLED device. In general, the package structure needs to be provided with an auxiliary structure in the edge region to achieve the package precision, and it is difficult to ensure a narrow frame of the frame area of the display screen.
发明内容Summary of the invention
本发明实施例提供一种具有较窄边框的显示屏及显示设备。Embodiments of the present invention provide a display screen and a display device having a narrow frame.
本发明所述的显示屏,包括基板,设置在所述基板的发光功能层和封装所述发光功能层的封装层,The display screen of the present invention includes a substrate, a light emitting function layer disposed on the substrate, and an encapsulation layer encapsulating the light emitting function layer.
所述基板上的边缘区域上设置有围绕所述封装层的挡墙,所述基板边缘区域上设有沟槽,其中,所述挡墙覆盖所述沟槽上且所述挡墙与基板连接的端部嵌入所述沟槽内。A retaining wall surrounding the encapsulating layer is disposed on an edge region of the substrate, and a groove is disposed on the edge region of the substrate, wherein the retaining wall covers the trench and the retaining wall is connected to the substrate The ends are embedded in the grooves.
本发明实施例的挡墙与沟槽层叠结合,既有效阻挡无机层的延展性裂痕,避免水气入侵造成器件失效;又能有效避免封装层在成膜过程中溶融状有机材料的溢流,更能将边框尽量做小,实现窄边框或无边框的目的。The retaining wall and the groove laminate combination of the embodiment of the invention not only effectively block the ductile crack of the inorganic layer, but also avoid the device failure caused by the water vapor intrusion; and can effectively avoid the overflow of the molten organic material of the encapsulating layer during the film forming process, It is better to make the border as small as possible to achieve a narrow border or no border.
附图说明DRAWINGS
为了更清楚地说明本发明实施例中的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还 可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings to be used in the embodiments will be briefly described below. It is obvious that the drawings in the following description are only some embodiments of the present invention. Those skilled in the art can also obtain other drawings based on these drawings without paying any creative work.
图1为本发明提供的显示屏的内部侧视方向的平面示意图。1 is a schematic plan view showing an internal side view of a display screen provided by the present invention.
图2为图1所示的显示屏的内部具体结构的截面示意图。2 is a schematic cross-sectional view showing the internal structure of the display screen shown in FIG. 1.
图3为图1所示的显示屏的另一实施例的内部侧视方向的平面示意图。3 is a plan view showing an internal side view of another embodiment of the display screen shown in FIG. 1.
图4为本发明显示屏制作方法的流程图。4 is a flow chart of a method of manufacturing a display screen of the present invention.
具体实施方式Detailed ways
下面将结合本发明实施方式中的附图,对本发明实施方式中的技术方案进行清楚、完整地描述。The technical solutions in the embodiments of the present invention will be clearly and completely described in the following with reference to the accompanying drawings.
本发明实施例提供一种显示屏和显示设备,所述显示屏为包括有机发光二极管的柔性屏,显示设备包括所述显示屏或者显示屏和触控面板,所述显示设备可以是车载设备、可穿戴设备,也可以是便携式终端设备。An embodiment of the present invention provides a display screen and a display device. The display screen is a flexible screen including an organic light emitting diode. The display device includes the display screen or a display screen and a touch panel, and the display device may be an in-vehicle device. A wearable device or a portable terminal device.
请参阅图1,本实施例中所述显示屏具体为有源矩阵有机发光二极体(Active Matrix/Organic Light Emitting Diode,AMOLED)显示屏,包括基板10,基板10包括显示区域A和边缘区域B。所述基板10为柔性基板或玻璃基板。本实施例中,所述基板10柔性材料制成,所述显示屏为柔性显示屏。所述基板10的显示区域A与显示屏的显示区域对应,所述边缘区域B与显示屏的边缘区域对应。显示屏的显示区域内设置有(Organic light-emitting diodes)OLED器件、TFT器件等,均由基板承载。Referring to FIG. 1 , the display screen is specifically an Active Matrix/Organic Light Emitting Diode (AMOLED) display screen, and includes a substrate 10 including a display area A and an edge area. B. The substrate 10 is a flexible substrate or a glass substrate. In this embodiment, the substrate 10 is made of a flexible material, and the display screen is a flexible display screen. The display area A of the substrate 10 corresponds to the display area of the display screen, and the edge area B corresponds to the edge area of the display screen. Organic light-emitting diodes (OLED devices), TFT devices, and the like are disposed in the display area of the display screen, and are all carried by the substrate.
位于所述显示区域A内,所述基板10上设有发光功能层14和封装所述发光功能层的封装层18。所述封装层18采用薄膜封装,是无机层、有机层和无机层堆叠形成,通常无机层是用SiOx、SiNx或者他无机材料的组合,有机层是利用IJP(inject printer)技术在发光功能层14上均匀涂布一种可以阻隔水气的溶融状绝缘材料。Located in the display area A, the substrate 10 is provided with a light-emitting function layer 14 and an encapsulation layer 18 encapsulating the light-emitting function layer. The encapsulation layer 18 is formed by a thin film encapsulation, which is formed by stacking an inorganic layer, an organic layer and an inorganic layer. Usually, the inorganic layer is a combination of SiOx, SiNx or an inorganic material, and the organic layer is formed by using an IJP (inject printer) technology in the luminescent functional layer. 14 is uniformly coated with a molten insulating material which can block moisture.
位于所述基板10的边缘区域B,所述基板10上设有围绕所述封装层18设置的挡墙19,所述基板10边缘朝向所述挡墙19设有沟槽13,其中,所述挡墙19堆叠于所述沟槽13的上方并覆盖所述沟槽13,所述挡墙19与基板连接的端部嵌入所述沟槽13内将沟槽13填充。Located in the edge region B of the substrate 10, the substrate 10 is provided with a retaining wall 19 disposed around the encapsulating layer 18, and the edge of the substrate 10 is provided with a groove 13 toward the retaining wall 19, wherein A retaining wall 19 is stacked above the groove 13 and covers the groove 13, and an end of the retaining wall 19 connected to the substrate is embedded in the groove 13 to fill the groove 13.
所述挡墙19用于阻挡在所述封装层18封装时溶融状绝缘材料因为材料流动特性产生溢流的现象,而沟槽13用于防止在柔性屏拉伸或压缩让无机层产 生延展性裂痕时,延展性裂痕到达沟槽13处会停止,避免水气进入,造成OLED器件和TFT器件的损坏。而本发明实施例的挡墙19与沟槽13层叠且部分互相嵌设结合,既有效阻挡无机层的延展性裂痕,避免水气入侵造成器件失效;又能有效避免封装层18在成膜过程中溶融状有机材料的溢流。最重要的是能将边框尽量做小,实现窄边框或无边框的目的。The retaining wall 19 is used to block the phenomenon that the molten insulating material overflows due to material flow characteristics when the encapsulating layer 18 is packaged, and the groove 13 is used to prevent stretching or compression of the flexible screen to cause ductility of the inorganic layer. In the case of cracks, the ductile cracks will stop at the groove 13 and prevent moisture from entering, causing damage to the OLED device and the TFT device. The retaining wall 19 of the embodiment of the present invention is laminated with the groove 13 and partially embedded with each other, which not only effectively blocks the ductile crack of the inorganic layer, but also avoids the device failure caused by water vapor intrusion; and can effectively prevent the encapsulating layer 18 from being formed during the film forming process. Overflow of medium melted organic material. The most important thing is to make the border as small as possible, to achieve a narrow border or no border.
如图2所示,本实施例中,所述挡墙19包括第一挡墙体191和层叠于所述第一挡墙体191远离基板表面的第二挡墙体192,所述发光功能层14包括薄膜晶体管层15、覆盖所述薄膜晶体管层15的平坦层155,以及依次叠于所述平坦层155上的像素定义层16及发光层17。本实施例中,所述第一挡墙体191与所述平坦层155位于同一层并同一道工艺制成,所述第二挡墙体192与像素定义层16位于同一层并同一道工艺制成,进而在制作过程中,无需新增加工艺和步骤,在平坦层定义图案时只需要定义出第一挡墙体191和第二挡墙体192的图案位置即可。As shown in FIG. 2, in the embodiment, the retaining wall 19 includes a first retaining wall body 191 and a second retaining wall body 192 laminated on the first retaining wall body 191 away from the surface of the substrate. 14 includes a thin film transistor layer 15, a flat layer 155 covering the thin film transistor layer 15, and a pixel defining layer 16 and a light emitting layer 17 which are sequentially stacked on the flat layer 155. In this embodiment, the first retaining wall body 191 is formed in the same layer and in the same process as the flat layer 155, and the second retaining wall body 192 is located on the same layer as the pixel defining layer 16 and is manufactured in the same process. In the manufacturing process, there is no need to newly add processes and steps, and it is only necessary to define the pattern positions of the first retaining wall body 191 and the second retaining wall body 192 when defining the pattern in the flat layer.
本实施例中,所述发光层17包括阳极层170、阴极层172和嵌设于像素定义层16的发光源171,所述阳极层170设于所述平坦层16远离所述薄膜晶体管层15的表面并与薄膜晶体管层电连接,所述阴极层172覆盖所述像素定义层16。所述发光源171是嵌设在所述像素定义层16远离平坦层的表面并露出像素定义层16的表面。In this embodiment, the luminescent layer 17 includes an anode layer 170, a cathode layer 172, and a illuminating source 171 embedded in the pixel defining layer 16. The anode layer 170 is disposed on the flat layer 16 away from the thin film transistor layer 15. The surface is electrically connected to a thin film transistor layer that covers the pixel defining layer 16. The light source 171 is embedded on a surface of the pixel defining layer 16 away from the surface of the flat layer and exposing the pixel defining layer 16.
本实施例中,所述沟槽13为多个且并排设置,所述薄膜晶体管层15包括层叠于所述基板10的栅极绝缘层151,多个所述沟槽13设于所述栅极绝缘层151上并贯穿所述栅极绝缘层151。所述第一挡墙体191与基板10连接的端部部分封装所述沟槽13,其余部分与所述栅极绝缘层151表面连接,所述挡墙19通过与沟槽13连接,增加连接面积,进而保证与基板10结合的稳定性。进一步的,所述第一挡墙体191除去与所述沟槽13连接的部分,其余部分与所述栅极绝缘层151为曲面连接,进而增加第一挡墙体191与栅极绝缘层151结合力。In this embodiment, the trenches 13 are provided in plurality and are arranged side by side, and the thin film transistor layer 15 includes a gate insulating layer 151 laminated on the substrate 10, and a plurality of the trenches 13 are disposed on the gate electrode. The insulating layer 151 is passed through the gate insulating layer 151. An end portion of the first barrier wall 191 connected to the substrate 10 encloses the trench 13 , and the remaining portion is connected to the surface of the gate insulating layer 151 , and the retaining wall 19 is connected to the trench 13 to increase the connection. The area, in turn, ensures stability in combination with the substrate 10. Further, the first retaining wall 191 is removed from the portion connected to the trench 13 , and the remaining portion is curved with the gate insulating layer 151 to increase the first retaining wall 191 and the gate insulating layer 151 . Binding force.
所述薄膜晶体管层15包括数个薄膜晶体管,所述薄膜晶体管包括所述栅极绝缘层、被所述栅极绝缘层151覆盖于所述基板10的表面的栅极、形成于栅极绝缘层151表面的与栅极对应的有源层、相对间隔设置的源极和漏极,所述源极和漏极分别连接所述有源层相对两侧。绝缘层覆盖数个所述薄膜晶体管。 所述平坦层155层叠于所述绝缘层的表面。The thin film transistor layer 15 includes a plurality of thin film transistors including the gate insulating layer, a gate covered by the gate insulating layer 151 on a surface of the substrate 10, and a gate insulating layer. An active layer corresponding to the gate of the surface of the 151, a source and a drain disposed opposite to each other, and the source and the drain are respectively connected to opposite sides of the active layer. The insulating layer covers a plurality of the thin film transistors. The flat layer 155 is laminated on the surface of the insulating layer.
如图3所示,进一步的,所述像素定义层16的表面设有支撑柱(图未示),所述第二挡墙体192远离所述的第一挡墙体191的表面形成有支撑体193,所述支撑体193与所述支撑柱161同一道工艺形成的,支撑体193可以更好的防止在所述封装层18封装时溶融状绝缘材料因为材料流动特性产生溢流的现象。As shown in FIG. 3, further, the surface of the pixel defining layer 16 is provided with a supporting pillar (not shown), and the second retaining wall body 192 is supported away from the surface of the first retaining wall body 191. The body 193 is formed by the same process as the support column 161. The support body 193 can better prevent the molten insulating material from overflowing due to material flow characteristics when the package layer 18 is packaged.
请参阅图4,本发明实施例提供一种显示屏制作方法,包括,Referring to FIG. 4, an embodiment of the present invention provides a method for manufacturing a display screen, including
步骤S1,在基板10上形成薄膜晶体管层15,薄膜晶体管层15包括栅极绝缘层151,位于基板10的边缘区域B的栅极绝缘层151上形成有沟槽13。In step S1, a thin film transistor layer 15 is formed on the substrate 10. The thin film transistor layer 15 includes a gate insulating layer 151, and a trench 13 is formed on the gate insulating layer 151 of the edge region B of the substrate 10.
本步骤中,包括通过图案化工艺在基板10的表面形成栅极,在涂布完栅极绝缘层后再通过图案化工艺形成有源层、源极和漏极,进而形成数个薄膜晶体管。涂布绝缘材料形成覆盖薄膜晶体管的绝缘层。所述图案化工艺包括涂布、光罩、曝光、蚀刻、显影等工艺技术。In this step, a gate electrode is formed on the surface of the substrate 10 by a patterning process, and after the gate insulating layer is coated, an active layer, a source and a drain are formed by a patterning process, thereby forming a plurality of thin film transistors. The insulating material is coated to form an insulating layer covering the thin film transistor. The patterning process includes coating, reticle, exposure, etching, development, and the like.
步骤S2,在所述薄膜晶体管层15上和所述栅极绝缘层151边缘涂布平坦材料层,图案化所述平坦材料层以形成平坦层155及位于所述基板10边缘区域的第一挡墙体191;其中,第一挡墙体191朝向所述基板的端部封装所述沟槽13。本步骤中,图案化所述平坦材料层以形成第一挡墙体191可以采用蚀刻方式。Step S2, coating a flat material layer on the thin film transistor layer 15 and the edge of the gate insulating layer 151, and patterning the flat material layer to form a flat layer 155 and a first block located at an edge region of the substrate 10. The wall 191; wherein the first retaining wall 191 encloses the groove 13 toward the end of the substrate. In this step, patterning the flat material layer to form the first barrier wall 191 may be performed by etching.
步骤S3,在所述平坦层155表面及第一挡墙体191远离基板的表面上涂布有机材料层,图案化所述有机材料层形成像素定义层16及层叠于第一挡墙体191上的第二挡墙体192。通过步骤S2和步骤S3形成平坦层和像素定义层16的同时形成所述挡墙19,不需要增加而外额工艺,不增加制作成本,而保证显示屏的质量。本步骤中,在涂布像素定义层之前,需要在平坦层形成发光层17的阳极层。所述阳极层设于所述平坦层远离所述薄膜晶体管层的表面并与薄膜晶体管层电连接,Step S3, coating an organic material layer on the surface of the flat layer 155 and the surface of the first retaining wall body 191 away from the substrate, patterning the organic material layer to form the pixel defining layer 16 and laminating on the first retaining wall body 191 The second retaining wall 192. When the flat layer and the pixel defining layer 16 are formed by the step S2 and the step S3, the retaining wall 19 is formed, and the external process is not required, and the manufacturing cost is not increased, and the quality of the display screen is ensured. In this step, it is necessary to form the anode layer of the light-emitting layer 17 in the flat layer before coating the pixel defining layer. The anode layer is disposed on the surface of the flat layer away from the thin film transistor layer and electrically connected to the thin film transistor layer.
步骤S4,在平坦层155上和像素定义层16上形成发光层17。所述发光层17包括所述阳极层、阴极层和嵌设于像素定义层16的发光源,所述阴极层覆盖所述像素定义层16。In step S4, a light-emitting layer 17 is formed on the flat layer 155 and the pixel defining layer 16. The light emitting layer 17 includes the anode layer, the cathode layer, and a light emitting source embedded in the pixel defining layer 16, and the cathode layer covers the pixel defining layer 16.
步骤S5,形成封装所述像素定义层16及发光层17的封装层18。本步骤中,封装层18采用薄膜封装技术形成。In step S5, an encapsulation layer 18 encapsulating the pixel defining layer 16 and the luminescent layer 17 is formed. In this step, the encapsulation layer 18 is formed by a thin film encapsulation technique.
在形成封装所述像素定义层16及发光层17的封装层18之前,还包括在 所述像素定义层16上形成数个间隔设置的支撑柱,支撑柱通过图案化工艺形成,同时在所述第二挡墙体192远离所述的第一挡墙体191的表面形成有支撑体,所述支撑体与所述支撑柱为同样材料在同一层通过同一工艺步骤形成。Before forming the encapsulation layer 18 encapsulating the pixel defining layer 16 and the luminescent layer 17, further comprising forming a plurality of spaced apart support pillars on the pixel defining layer 16, the support pillars being formed by a patterning process, A second support wall 192 is formed with a support body away from the surface of the first retaining wall body 191, and the support body and the support post are formed of the same material in the same layer by the same process step.
本发明实施例所述的显示屏制作方法在不增加工艺步骤前提下形成挡墙以防止封装层在制作过程中溢胶现象,并不增加占用显示屏边框区域宽度,实现窄边框效果。The method for manufacturing the display screen according to the embodiment of the present invention forms a retaining wall without increasing the number of process steps to prevent the encapsulation layer from overflowing during the manufacturing process, and does not increase the width of the border portion of the display screen, thereby achieving a narrow bezel effect.
以上所述是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也视为本发明的保护范围。The above is a preferred embodiment of the present invention, and it should be noted that those skilled in the art can also make several improvements and retouchings without departing from the principles of the present invention. It is the scope of protection of the present invention.

Claims (10)

  1. 一种显示屏,其特征在于,包括基板,设置在所述基板的发光功能层和封装所述发光功能层的封装层,A display screen, comprising: a substrate, a light emitting function layer disposed on the substrate, and an encapsulation layer encapsulating the light emitting function layer,
    所述基板上的边缘区域上设置有围绕所述封装层的挡墙,所述基板边缘区域上还设有沟槽,其中,所述挡墙覆盖所述沟槽上且所述挡墙与基板连接的端部嵌入所述沟槽内。a retaining wall surrounding the encapsulating layer is disposed on an edge region of the substrate, and a groove is further disposed on the edge region of the substrate, wherein the retaining wall covers the trench and the retaining wall and the substrate The ends of the connections are embedded in the grooves.
  2. 如权利要求1所述显示屏,其特征在于,所述挡墙包括第一挡墙体和层叠于所述第一挡墙体远离基板表面的第二挡墙体,所述发光功能层包括薄膜晶体管层、覆盖所述薄膜晶体管层的平坦层,以及依次叠于所述平坦层上的像素定义层及发光层;The display screen according to claim 1, wherein the retaining wall comprises a first retaining wall body and a second retaining wall body laminated on the first retaining wall body away from the surface of the substrate, wherein the illuminating functional layer comprises a film a transistor layer, a planar layer covering the thin film transistor layer, and a pixel defining layer and a light emitting layer sequentially stacked on the flat layer;
    所述第一挡墙体与所述平坦层位于同一层并同一道工艺制成,所述第二挡墙体与像素定义层位于同一层并同一道工艺制成。The first retaining wall body is formed in the same layer and in the same process as the flat layer, and the second retaining wall body is formed in the same layer and in the same process as the pixel defining layer.
  3. 如权利要求1或2所述显示屏,其特征在于,所述第二挡墙体远离所述的第一挡墙体的表面形成有支撑体。The display screen according to claim 1 or 2, wherein the second retaining wall body is formed with a support body away from the surface of the first retaining wall body.
  4. 如权利要求3所述显示屏,其特征在于,所述像素定义层上设有支撑柱,所述支撑体与所述支撑柱同一道工艺形成的。The display screen according to claim 3, wherein the pixel defining layer is provided with a supporting column, and the supporting body is formed in the same process as the supporting column.
  5. 如权利要求2所述显示屏,其特征在于,所述沟槽为多个且并排设置,所述薄膜晶体管层包括层叠于所述基板的栅极绝缘层,多个所述沟槽设于所述栅极绝缘层上并贯穿所述栅极绝缘层。The display screen according to claim 2, wherein said plurality of trenches are disposed side by side, said thin film transistor layer comprises a gate insulating layer laminated on said substrate, and said plurality of said trenches are disposed in said display The gate insulating layer is formed on the gate insulating layer.
  6. 如权利要求2所述显示屏,其特征在于,所述第一挡墙体与基板连接的端部部分封装所述沟槽,另一部分与所述栅极绝缘层曲面连接。The display screen according to claim 2, wherein an end portion of the first retaining wall body connected to the substrate encloses the groove, and another portion is curvedly connected to the gate insulating layer.
  7. 如权利要求2所述显示屏,其特征在于,所述发光层包括阳极层、阴极层和嵌设于像素定义层的发光源,所述阳极层设于所述平坦层远离所述薄膜晶体管层的表面并与薄膜晶体管层电连接,所述阴极层覆盖所述像素定义层。The display screen according to claim 2, wherein the light emitting layer comprises an anode layer, a cathode layer and a light emitting source embedded in the pixel defining layer, wherein the anode layer is disposed on the flat layer away from the thin film transistor layer The surface is electrically connected to a thin film transistor layer that covers the pixel defining layer.
  8. 如权利要求1-7任一项所述显示屏,其特征在于,所述基板为柔性基板或玻璃基板。The display screen according to any one of claims 1 to 7, wherein the substrate is a flexible substrate or a glass substrate.
  9. 一种显示屏制作方法,其特征在于,包括,在基板上形成薄膜晶体管层,薄膜晶体管层包括栅极绝缘层,位于基板的边缘区域的栅极绝缘层上形成有沟槽;A method for manufacturing a display screen, comprising: forming a thin film transistor layer on a substrate; the thin film transistor layer comprises a gate insulating layer, and a trench is formed on the gate insulating layer of the edge region of the substrate;
    在所述薄膜晶体管层上和所述栅极绝缘层边缘涂布平坦材料层,图案化所述平坦材料层以形成平坦层及位于所述基板边缘区域的第一挡墙体;其中,第一挡墙体覆盖所述沟槽;Coating a flat material layer on the thin film transistor layer and the edge of the gate insulating layer, patterning the flat material layer to form a flat layer and a first retaining wall body located at an edge region of the substrate; wherein, the first a retaining wall covering the groove;
    在所述平坦层表面及第一挡墙体远离基板的表面上涂布像素材料层,图案化所述像素材料层形成像素定义层及层叠于第一挡墙体上的第二挡墙体;Coating a pixel material layer on the surface of the flat layer and the surface of the first retaining wall away from the substrate, and patterning the pixel material layer to form a pixel defining layer and a second retaining wall layer stacked on the first retaining wall;
    在平坦层上和像素定义层上形成发光层;Forming a light-emitting layer on the flat layer and on the pixel defining layer;
    形成封装所述像素定义层及发光层的封装层。Forming an encapsulation layer encapsulating the pixel defining layer and the light emitting layer.
  10. 一种显示设备,其特征在于,包括权利要求1-8任一项所述的显示屏。A display device comprising the display screen of any of claims 1-8.
PCT/CN2017/119331 2017-12-28 2017-12-28 Display screen, manufacture method thereof, and display device WO2019127203A1 (en)

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