CN111430565B - Display device and method for manufacturing display device - Google Patents

Display device and method for manufacturing display device Download PDF

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Publication number
CN111430565B
CN111430565B CN202010235869.XA CN202010235869A CN111430565B CN 111430565 B CN111430565 B CN 111430565B CN 202010235869 A CN202010235869 A CN 202010235869A CN 111430565 B CN111430565 B CN 111430565B
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layer
ammonia
inorganic insulating
display device
touch
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CN111430565A (en
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李远航
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

A display device and a method of manufacturing the display device are provided. The display device comprises a touch layer. The touch layer comprises at least one inorganic insulating layer, at least one metal layer and a passivation layer. The metal layer is arranged on the inorganic insulating layer and forms a pattern of a touch electrode. The passivation layer covers the inorganic insulating layer and the metal layer and includes an organic photoresist doped with ammonia absorbing particles.

Description

Display device and method for manufacturing display device
Technical Field
The present invention relates to the field of display technologies, and in particular, to a display device and a method for manufacturing the display device.
Background
An Organic Light Emitting Diode (OLED) embedded touch display panel is also called DOT technology (DOT). The integrated OLED and touch structure has the advantages of better transmittance, bending resistance, light weight, thinness and the like compared with an external touch panel, and becomes a future trend of flexible OLED display. The technology is that a touch structure is directly manufactured on a Thin Film Encapsulation (TFE) of an OLED panel by using a low-temperature process (T is less than or equal to 90 ℃), so that the integration of the OLED and the touch structure is realized. Fig. 1 shows a schematic structure of an OLED panel using DOT technology. A typical OLED panel structure includes, from bottom to top, a flexible substrate 10 (e.g., a polyimide, PI, substrate), an array substrate 11, a light emitting device layer 12, and a thin film encapsulation layer 13. The touch layer using DOT technology includes, from bottom to top, a first inorganic insulating layer 14, a first metal layer 15, a second inorganic insulating layer 14, a second metal layer 15, and a passivation layer 16. The outer film layer of the panel comprises a polarizer layer 18 and a cover plate layer 19, and the lamination is realized by Optical Clear Adhesive (OCA) glue. The first inorganic insulating layer 14 and the second inorganic insulating layer 14 are made of silicon nitride (SiNx), the first metal layer 15 and the second metal layer 15 form a pattern of a metal touch electrode, and the material may be titanium-aluminum-titanium composite (Ti-Al-Ti), molybdenum (Mo) or other low-resistance metals.
In a practical DOT panel, after reliability testing under high temperature conditions, the polarizer layer 18 exhibits discoloration, as shown in FIG. 2Causing product failure. The polarizer layer discolors and hydrogen (NH)3) And (4) correlating. In the production process of the DOT panel, the inorganic insulating layer is made of silicon nitride (SiNx) and silicon oxide (SiOx), and is coated by Plasma Enhanced Chemical Vapor Deposition (PECVD), wherein the chemical reaction formula is SiH4(g)+NH3(g)+N2(g)→SiNx(s)+H2(g) And SiH4(g)+N2O (g) → siox(s) + H2(g) + N2 (g). It can be seen that hydrogen (NH) is used in SiNx coating3). NH formed during coating4 +May remain in the film layer, particularly in the DOT touch layer structure, the first inorganic insulating layer 14 and the second inorganic insulating layer 14. NH4+ formed during the low-temperature SiNx coating process remains in the film layer. After high-temperature reliability test or long-time display use, the ammonium ions can be precipitated from the film layer in the form of ammonia gas to react with the polarizer layer 18, so that the color of the polarizer is changed, and the display effect of the display device is influenced.
Disclosure of Invention
The present invention is directed to a display device and a method for manufacturing the same, which reduces the risk of product failure due to color change of a polarizer layer.
To solve the above technical problems, the present invention provides a touch layer for a display device, comprising: at least one inorganic insulating layer; at least one metal layer arranged on the inorganic insulating layer and forming a pattern of a touch electrode; and a passivation layer covering the inorganic insulating layer and the metal layer and including an organic photoresist doped with ammonia-absorbing particles.
According to an embodiment of the present invention, the ammonia absorbing particles are an ammonia molecular sieve, and the pore size of the ammonia molecular sieve is smaller than 100 nm and larger than 0.38 nm.
According to still further features in an embodiment of the invention, the ammonia molecular sieve is a 4A molecular sieve.
According to still further features in an embodiment of the invention the molecular sieve has a spatial network structure of silicon-oxygen tetrahedral units and aluminum-oxygen tetrahedral unitsThe elements are arranged in a staggered way, and the chemical formula of the silicon-oxygen tetrahedral unit is SiO4The chemical formula of the alundum unit is AlO4The chemical formula of the ammonia molecular sieve is Na2O·Al2O3·2SiO2·9/2H2O，SiO2/Al2O3The silicon to aluminum ratio of (2).
According to an embodiment of the invention, the ammonia absorbing particles comprise molecules that chemically react with ammonia.
According to an embodiment of the present invention, the inorganic insulating layer includes silicon nitride or silicon oxide, the chemical formula of the silicon nitride is SiNx, and the chemical formula of the silicon oxide is SiOx, where x is an integer.
According to an embodiment of the present invention, the line width precision of the photolithography process of the passivation layer is less than 5 microns, the film thickness is 2 microns, and the transmittance is greater than 92%.
In order to solve the above technical problem, the present invention further provides a display device, including: a substrate base plate; an array substrate arranged on the substrate base plate; a light emitting device layer disposed on the array substrate; the thin film packaging layer is arranged on the light-emitting device layer;
the touch layer is arranged on the thin film packaging layer; the polarizer layer is arranged on the touch layer; the cover plate layer is arranged on the polarizer layer; wherein the touch layer comprises: at least one inorganic insulating layer, at least one metal layer, disposed on the inorganic insulating layer, and forming a pattern of a touch electrode; and a passivation layer covering the inorganic insulating layer and the metal layer and including an organic photoresist doped with ammonia absorbing particles.
According to an embodiment of the present invention, the ammonia absorbing particles are an ammonia molecular sieve, and the pore size of the ammonia molecular sieve is smaller than 100 nm and larger than 0.38 nm.
According to still further features in an embodiment of the invention, the ammonia molecular sieve is a 4A molecular sieve.
According to still further features in an embodiment of the invention the ammonia molecular sieve is spatially separated from the substrate by a spacerThe network structure is formed by the staggered arrangement of silicon-oxygen tetrahedral units and aluminum-oxygen tetrahedral units, wherein the chemical formula of the silicon-oxygen tetrahedral units is SiO4The chemical formula of the alundum unit is AlO4The chemical formula of the ammonia molecular sieve is Na2O·Al2O3·2SiO2·9/2H2O，SiO2/Al2O3The silicon to aluminum ratio of (2).
According to an embodiment of the invention, the ammonia absorbing particles comprise molecules that chemically react with ammonia.
According to an embodiment of the present invention, the inorganic insulating layer includes silicon nitride or silicon oxide, the chemical formula of the silicon nitride is SiNx, and the chemical formula of the silicon oxide is SiOx, where x is an integer.
According to an embodiment of the present invention, the line width precision of the photolithography process of the passivation layer is less than 5 microns, the film thickness is 2 microns, and the transmittance is greater than 92%.
In order to solve the above technical problem, the present invention further provides a method for manufacturing a display device, including: step 10: providing a substrate base plate; step 20: sequentially forming an array substrate, a light-emitting device layer and a thin film packaging layer on the substrate; step 30: forming a touch layer on the thin film packaging layer by using an organic light resistance doped with ammonia absorption particles through a photoetching process; step 40: and sequentially forming a polarizer layer and a cover plate layer on the touch layer.
According to an embodiment of the present invention, the touch layer includes: at least one inorganic insulating layer, at least one metal layer, disposed on the inorganic insulating layer, and forming a pattern of a touch electrode; and a passivation layer covering the inorganic insulating layer and the metal layer and including the organic photoresist doped with the ammonia absorbing particles.
According to an embodiment of the present invention, the ammonia absorbing particles are an ammonia molecular sieve, and the pore size of the ammonia molecular sieve is smaller than 100 nm and larger than 0.38 nm.
According to still further features in an embodiment of the invention, the ammonia molecular sieve is a 4A molecular sieve.
According to still further features in an embodiment of the invention, the spatial network of molecular sieves of ammonia is formed by a staggered arrangement of silicon-oxygen tetrahedral units and aluminum-oxygen tetrahedral units, the chemical formula of the silicon-oxygen tetrahedral units being SiO4The chemical formula of the alundum unit is AlO4The chemical formula of the ammonia molecular sieve is Na2O·Al2O3·2SiO2·9/2H2O，SiO2/Al2O3The silicon to aluminum ratio of (2).
According to an embodiment of the invention, the ammonia absorbing particles comprise molecules that chemically react with ammonia.
According to an embodiment of the present invention, the inorganic insulating layer includes silicon nitride or silicon oxide, the chemical formula of the silicon nitride is SiNx, and the chemical formula of the silicon oxide is SiOx, where x is an integer.
According to an embodiment of the present invention, the line width precision of the photolithography process of the passivation layer is less than 5 microns, the film thickness is 2 microns, and the transmittance is greater than 92%.
According to the display device and the manufacturing method of the display device, the ammonia absorption particles doped in the passivation layer of the touch layer absorb hydrogen remaining in the inorganic insulating layer of the touch layer before the hydrogen drifts to the polarizer layer, so that the reaction of hydrogen and the polarizer layer is avoided, and the risk of product failure caused by color change of the polarizer layer is reduced.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the description below are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic cross-sectional view of a conventional display device.
Fig. 2 is a schematic image of a polarizer layer of a conventional display device discolored due to reaction with hydrogen.
Fig. 3 is a schematic cross-sectional view illustrating a structure of a display device according to an embodiment of the invention.
FIG. 4 is a flow chart of a method for manufacturing a display device according to an embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
The display panel, the display device and the manufacturing method thereof provided by the embodiments of the present application are described in detail above, and the principles and embodiments of the present application are explained herein by applying specific examples, and the description of the embodiments above is only used to help understand the technical solutions and the core ideas of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.
Referring to fig. 3, a cross-sectional view of a display device according to an embodiment of the invention is shown, which also shows a structure of a touch layer of the display device.
The present invention provides a touch layer for a display device 2, comprising at least one inorganic insulating layer 24, at least one metal layer 25 and a passivation layer 26. The metal layer 25 is disposed on the inorganic insulating layer 24, and forms a pattern of a touch electrode. The passivation layer 26 covers the inorganic insulating layer 24 and the metal layer 25 and comprises an organic photoresist doped with ammonia-absorbing particles 27.
In an embodiment of the present invention, the touch layer includes a plurality of inorganic insulating layers 24, a first inorganic insulating layer 24a and a second inorganic insulating layer 24b, respectively, and the touch layer includes a plurality of metal layers 25, a first metal layer 25a and a second metal layer 25b, respectively. The first metal layer 25a is disposed on the first inorganic insulating layer 24a, and the second inorganic insulating layer 24b is also disposed on the first inorganic insulating layer 24a and covers at least a portion of the first metal layer 25 a. A portion of the first metal layer 25a penetrates the second inorganic insulating layer 24b and covers at least a portion of the second inorganic insulating layer 24b, and the second metal layer 25b is disposed on the second inorganic insulating layer 24 b. Through the above manner, the pattern of the touch electrode is formed. Finally, the passivation layer 26 is formed on the second inorganic insulating layer 24b, the first metal layer 25a, and the second metal layer 25b by a photolithography process using an organic photoresist doped with ammonia absorbing particles 27. However, the structure of the inorganic insulating layer 24 and the metal layer 25 is only an embodiment of the touch layer structure, and should not be construed as a limitation of the invention.
According to an embodiment of the present invention, the material of the inorganic insulating layer 24 is silicon nitride or silicon oxide, the chemical formula of the silicon nitride is SiNx, and the chemical formula of the silicon oxide is SiOx, where x is an integer. The inorganic insulating layer 14 is formed by a Plasma Enhanced Chemical Vapor Deposition (PECVD) process, which has a chemical formula of SiH4(g)+NH3(g)+N2(g)→SiNx(s)+H2(g) And SiH4(g)+N2O (g) → siox(s) + H2(g) + N2 (g). Because hydrogen (NH) is used in the SiNx coating film3) NH formed during the coating process4 +May remain in the first inorganic insulating layer 24 and the second inorganic insulating layer 24, and these ammonium ions may diffuse out of the film layer in the form of ammonia gas.
According to an embodiment of the present invention, the ammonia absorbing particle 27 is a physical ammonia absorbing particle or a chemical ammonia absorbing particle. In a chemical ammonia-absorbing particle, the ammonia-absorbing particle 27 includes molecules that chemically react with ammonia, such as ammonium bisulfate, chloride, and the like. In a physical ammonia absorbing particle, the physical ammonia absorbing particle is an ammonia molecular sieve, the ammonia molecular sieve has a particle size of less than 100 nm and a pore size of greater than 0.38 nm. In a preferred embodiment, the ammonia molecular sieve is a 4A molecular sieve, i.e., the molecular sieve has a pore size of 4A (0.4 nm). Due to ammonia (NH)3) Has a molecular kinetic diameter of 0.365 to 0.38 nm, and ammonia (NH)3) Molecular sieves having a smaller molecular diameter than the crystal pore size of the molecular sieve can enter the crystals of the 4A molecular sieve to be adsorbed, while substances having a larger molecular diameter than the crystal pore size of the molecular sieve are rejected, and thus the 4A molecular sieve is suitable for adsorbing ammonia molecules. However, the use of physical ammonia-absorbing particles has the advantage of having good adsorption efficiency and not generating other compounds or gases, which again chemically react with a polarizer layer 28 of the display device 2.
According to still further features in an embodiment of the invention the ammonia molecular sieve has a spatial network structureThe structure is formed by staggered arrangement of silicon-oxygen tetrahedral units and aluminum-oxygen tetrahedral units, wherein the chemical formula of the silicon-oxygen tetrahedral units is SiO4The chemical formula of the alundum unit is AlO4The chemical formula of the ammonia molecular sieve is Na2O·Al2O3·2SiO2·9/2H2O，SiO2/Al2O3The silicon to aluminum ratio of (2).
According to an embodiment of the present invention, the line width precision of the photolithography process of the passivation layer 16 is less than 5 microns, the film thickness is 2 microns, and the transmittance is greater than 92%. In one embodiment, the organic photoresist of the passivation layer 16 may be a low temperature organic photoresist. The proportion of the molecular sieve in the low-temperature organic photoresist is not specially limited in the invention, so that the precision of the photoetching process of the passivation layer and the transmittance of the passivation layer are ensured as standards.
Fig. 3 is a schematic cross-sectional view illustrating a structure of a display device according to an embodiment of the invention.
The present invention provides a display device 2 including: a substrate base plate 20; an array substrate 21 disposed on the substrate 20; a light emitting device layer 22 disposed on the array substrate 21; a thin film encapsulation layer 23 disposed on the light emitting device layer 22; a touch layer disposed on the thin film encapsulation layer 23; a polarizer 28 layer disposed on the touch layer; and a cover plate layer 29 disposed on the polarizer layer 28; the touch layer includes at least one inorganic insulating layer 24, at least one metal layer 25, and a passivation layer 26. The metal layer 25 is disposed on the inorganic insulating layer 24, and forms a pattern of a touch electrode. The passivation layer 26 covers the inorganic insulating layer 24 and the metal layer 25 and comprises an organic photoresist doped with ammonia-absorbing particles 27. In one embodiment, the polarizer layer 28 and the cover plate layer 29 are attached to the touch layer by using an optically clear adhesive (optical clear adhesive).
In an embodiment of the invention, the touch layer of the display device 2 includes a plurality of inorganic insulating layers 24, namely a first inorganic insulating layer 24a and a second inorganic insulating layer 24b, and the touch layer includes a plurality of metal layers 25, namely a first metal layer 25a and a second metal layer 25 b. The first metal layer 25a is disposed on the first inorganic insulating layer 24a, and the second inorganic insulating layer 24b is also disposed on the first inorganic insulating layer 24a and covers at least a portion of the first metal layer 25 a. A portion of the first metal layer 25a penetrates the second inorganic insulating layer 24b and covers at least a portion of the second inorganic insulating layer 24b, and the second metal layer 25b is disposed on the second inorganic insulating layer 24 b. Through the above manner, the pattern of the touch electrode is formed. Finally, the passivation layer 26 is formed on the second inorganic insulating layer 24b, the first metal layer 25a, and the second metal layer 25b by a photolithography process using an organic photoresist doped with ammonia absorbing particles 27. However, the structure of the inorganic insulating layer 24 and the metal layer 25 is only an embodiment of the touch layer structure of the display device 2, and should not be construed as a limitation of the invention.
According to an embodiment of the present invention, the material of the inorganic insulating layer 24 is silicon nitride or silicon oxide, the chemical formula of the silicon nitride is SiNx, and the chemical formula of the silicon oxide is SiOx, where x is an integer. The inorganic insulating layer 14 is formed by a Plasma Enhanced Chemical Vapor Deposition (PECVD) process, which has a chemical formula of SiH4(g)+NH3(g)+N2(g)→SiNx(s)+H2(g) And SiH4(g)+N2O (g) → SiOx(s) + H2(g) + N2 (g). Because hydrogen (NH) is used in the SiNx coating film3) NH formed during the coating process4 +May remain in the first inorganic insulating layer 24 and the second inorganic insulating layer 24, and these ammonium ions may diffuse out of the film layer in the form of ammonia gas.
According to an embodiment of the present invention, the ammonia absorbing particle 27 is a physical ammonia absorbing particle or a chemical ammonia absorbing particle. In a chemical ammonia-absorbing particle, the ammonia-absorbing particle 27 includes molecules that chemically react with ammonia, such as ammonium bisulfate, chloride, and the like. In a physical ammonia-absorbing particle, theThe physical ammonia-absorbing particles are an ammonia molecular sieve having a particle size of less than 100 nanometers and a pore size of greater than 0.38 nanometers. In a preferred embodiment, the ammonia molecular sieve is a 4A molecular sieve, i.e., the molecular sieve has a pore size of 4A (0.4 nm). Due to ammonia (NH)3) Has a molecular kinetic diameter of 0.365 to 0.38 nm, and ammonia (NH)3) Molecular sieves having a smaller molecular diameter than the crystal pore size of the molecular sieve can enter the crystals of the 4A molecular sieve to be adsorbed, while substances having a larger molecular diameter than the crystal pore size of the molecular sieve are rejected, and thus the 4A molecular sieve is suitable for adsorbing ammonia molecules. However, the advantage of using physical ammonia-absorbing particles is that they possess good adsorption efficiency and do not generate other compounds or gases, which again chemically react with polarizer layer 28 of display device 2.
According to still further features in an embodiment of the invention, the spatial network of molecular sieves of ammonia is formed by a staggered arrangement of silicon-oxygen tetrahedral units and aluminum-oxygen tetrahedral units, the chemical formula of the silicon-oxygen tetrahedral units being SiO4The chemical formula of the alundum unit is AlO4The chemical formula of the ammonia molecular sieve is Na2O·Al2O3·2SiO2·9/2H2O，SiO2/Al2O3The silicon to aluminum ratio of (2).
According to an embodiment of the present invention, the line width precision of the photolithography process of the passivation layer 16 is less than 5 microns, the film thickness is 2 microns, and the transmittance is greater than 92%. In one embodiment, the organic photoresist of the passivation layer 16 may be a low temperature organic photoresist. The proportion of the molecular sieve in the low-temperature organic photoresist is not specially limited in the invention, so that the precision of the photoetching process of the passivation layer and the transmittance of the passivation layer are ensured as standards.
Referring to fig. 4, a flowchart of a method for manufacturing the display device 2 according to an embodiment of the invention is shown.
The present invention also provides a method for manufacturing a display device 2, including: step 10: providing a substrate 20; step 20: sequentially forming an array substrate 21, a light emitting device layer 22 and a thin film encapsulation layer 23 on the substrate 20; and step 30: forming a touch layer on the thin film encapsulation layer by using an organic photoresist doped with ammonia absorbing particles 27 through a photolithography process; step 40: on the touch layer, a polarizer layer 28 and a cover plate layer 29 are sequentially formed.
According to an embodiment of the present invention, the touch layer includes: at least one inorganic insulating layer 24, at least one metal layer 25 disposed on the inorganic insulating layer 24 and forming a pattern of a touch electrode; and a passivation layer 26 covering the inorganic insulating layer 24 and the metal layer 25 and including the organic photoresist doped with the ammonia absorbing particles 27.
According to the display device and the manufacturing method of the display device, the ammonia absorption particles doped in the passivation layer of the touch layer absorb hydrogen remaining in the inorganic insulating layer of the touch layer before the hydrogen drifts to the polarizer layer, so that the reaction of hydrogen and the polarizer layer is avoided, and the risk of product failure caused by color change of the polarizer layer is reduced.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.

Claims (5)

1. A display device, characterized in that: the display device includes:
a substrate base plate;
an array substrate arranged on the substrate base plate;
a light emitting device layer disposed on the array substrate;
the thin film packaging layer is arranged on the light-emitting device layer;
the touch layer is arranged on the thin film packaging layer;
the polarizer layer is arranged on the touch layer; and
the cover plate layer is arranged on the polarizer layer;
wherein the touch layer comprises:
at least one inorganic insulating layer formed on the substrate,
at least one metal layer arranged on the inorganic insulating layer and forming a pattern of a touch electrode; and
a passivation layer covering the inorganic insulating layer and the metal layer and including an organic photoresist doped with ammonia-absorbing particles;
the ammonia absorbing particles are ammonia molecular sieves, the particle size of the ammonia molecular sieves is less than 100 nanometers, and the pore diameter of the ammonia molecular sieves is more than 0.38 nanometers;
the spatial network structure of the ammonia molecular sieve is formed by staggered arrangement of silicon-oxygen tetrahedral units and aluminum-oxygen tetrahedral units, and the chemical formula of the silicon-oxygen tetrahedral units is SiO4The chemical formula of the alundum unit is AlO4The chemical formula of the ammonia molecular sieve is Na2O·Al2O3·2SiO2·9/2H2O，SiO2/Al2O3The silicon to aluminum ratio of (2).
2. The display device of claim 1, wherein: the ammonia absorbing particles comprise molecules that chemically react with ammonia.
3. A manufacturing method of a display device is characterized in that: the method comprises the following steps:
step 10: providing a substrate base plate;
step 20: sequentially forming an array substrate, a light-emitting device layer and a thin film packaging layer on the substrate;
step 30: forming a touch layer on the thin film packaging layer by using an organic light resistance doped with ammonia absorption particles through a photoetching process;
step 40: sequentially forming a polarizer layer and a cover plate layer on the touch layer;
the touch layer includes:
at least one inorganic insulating layer formed on the substrate,
at least one metal layer arranged on the inorganic insulating layer and forming a pattern of a touch electrode; and
a passivation layer covering the inorganic insulating layer and the metal layer and including the organic photoresist doped with the ammonia-absorbing particles;
the ammonia absorbing particles are ammonia molecular sieves, the particle size of the ammonia molecular sieves is less than 100 nanometers, and the pore diameter of the ammonia molecular sieves is more than 0.38 nanometers;
the spatial network structure of the ammonia molecular sieve is formed by staggered arrangement of silicon-oxygen tetrahedral units and aluminum-oxygen tetrahedral units, and the chemical formula of the silicon-oxygen tetrahedral units is SiO4The chemical formula of the alundum unit is AlO4The chemical formula of the ammonia molecular sieve is Na2O·Al2O3·2SiO2·9/2H2O，SiO2/Al2O3The silicon to aluminum ratio of (2).
4. A method of manufacturing a display device according to claim 3, wherein: the ammonia absorbing particles comprise molecules that chemically react with ammonia.
5. A method of manufacturing a display device according to claim 3, wherein:
the line width precision of the photoetching process of the passivation layer is less than 5 microns, the film thickness is 2 microns, and the transmittance is more than 92%.
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CN109817831A (en) * 2019-02-12 2019-05-28 京东方科技集团股份有限公司 Display base plate and its manufacturing method, display device
CN109841632A (en) * 2019-01-31 2019-06-04 合肥京东方光电科技有限公司 The production method of display base plate, display panel and display base plate

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KR102374754B1 (en) * 2017-09-27 2022-03-15 엘지디스플레이 주식회사 Display device having a touch structure

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Publication number Priority date Publication date Assignee Title
CN109725763A (en) * 2017-10-30 2019-05-07 乐金显示有限公司 Display device with integrated touch screen
CN109841632A (en) * 2019-01-31 2019-06-04 合肥京东方光电科技有限公司 The production method of display base plate, display panel and display base plate
CN109817831A (en) * 2019-02-12 2019-05-28 京东方科技集团股份有限公司 Display base plate and its manufacturing method, display device

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