CN106158918B - Flexible display and preparation method thereof - Google Patents

Flexible display and preparation method thereof Download PDF

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Publication number
CN106158918B
CN106158918B CN201610871672.9A CN201610871672A CN106158918B CN 106158918 B CN106158918 B CN 106158918B CN 201610871672 A CN201610871672 A CN 201610871672A CN 106158918 B CN106158918 B CN 106158918B
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layer
hole
flexible display
dielectric layer
gate insulation
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CN106158918A (en
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顾维杰
施露
习王锋
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Chengdu Vistar Optoelectronics Co Ltd
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Kunshan New Flat Panel Display Technology Center Co Ltd
Kunshan Guoxian Photoelectric Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/165Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field
    • G02F1/166Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
    • G02F1/167Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Molecular Biology (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The present invention provides a kind of flexible display and preparation method thereof, comprising: sequentially forms channel layer, gate insulation layer, first electrode layer and dielectric layer from the bottom to top on flexible substrates, dielectric layer cladding first electrode layer is simultaneously bonded superposition with gate insulation layer;The first hole for running through the dielectric layer and gate insulation layer is formed in dielectric layer and gate insulation layer, which terminates at channel layer upper surface;The organic filler that can absorb stress that can at least coat first hole surface completely is formed at the first hole;It removes part organic filler and forms the second hole, being formed between second hole and the first hole has the organic matter layer for absorbing stress;The second electrode lay is deposited in the second hole.Above-mentioned flexible display and preparation method thereof can the stress energy that is generated in bending process of buffer electrode layer and insulating layer, improve display effect.

Description

Flexible display and preparation method thereof
Technical field
The present invention relates to display technology fields, more particularly, to a kind of flexible display and preparation method thereof.
Background technique
Flexible display has many advantages, such as, such as impact resistance, and shock resistance is strong, light-weight, small in size, carries more square Just the features such as.
Current main flexible display is broadly divided into three kinds: Electronic Paper (or flexible electrophoresis showed), flexible organic hair Optical diode (Organic Light Emitting Diode, OLED) and flexible liquid crystal etc..
The maximum feature of flexible screen body is exactly that bendable can be rolled over.In screen body bending process, it is easiest to cause failure damage It is the contact interface between metal and inoranic membrane.Due to differing greatly for fatigue properties, in bending, inoranic membrane, which is also easy to produce, to be split Line, metal layer is easily by inorganic layer stress rupture.
For the above technical issues, in the prior art, using buffer layer is directly arranged between metal layer and insulating layer, Realize that the stress of bending process can absorb with this.But the method and structure for forming the buffer layer also fails to solve bending very well Influence of the process to metal electrode.
Summary of the invention
The purpose of the present invention includes providing a kind of flexible display and preparation method thereof, is existed with solving existing flexible display When bending, the problem of damaging metal electrode and reduce display effect.
The embodiment of the present invention provides a kind of preparation method of flexible display, which includes:
Sequentially form channel layer, gate insulation layer, first electrode layer and dielectric layer, dielectric layer from the bottom to top on flexible substrates Cladding first electrode layer is simultaneously bonded superposition with gate insulation layer;
The first hole for running through the dielectric layer and gate insulation layer is formed in dielectric layer and gate insulation layer, which terminates at Channel layer upper surface;
The organic filling that can absorb stress that can at least coat first hole surface completely is formed at the first hole Object;
It removes part organic filler and forms the second hole, being formed between second hole and the first hole has having for absorption stress Machine nitride layer;
The second electrode lay is deposited in the second hole.
Further, when forming organic filler, the first hole is covered with.
Further, the organic filler is formed by coating method or printing processing technology.
Further, second hole longitudinal section is trapezoidal, rectangle or triangle.
Further, second hole is formed in organic filler using masking process.
The embodiment of the present invention also provides a kind of flexible display, comprising:
Flexible base board;
Channel layer, gate insulation layer, first electrode layer and the dielectric layer being arranged from bottom to top on flexible substrates, wherein be situated between Matter layer cladding first electrode layer is simultaneously bonded superposition with gate insulation layer;
First hole through dielectric layer and gate insulation layer and terminates at channel layer upper surface;
Organic matter layer is adhered to the surface in the first hole, can absorb stress;And
The second electrode lay is deposited on the second hole.
Further, organic matter layer removes a part by the organic filler that can be at least entirely coated on the first hole surface After obtain, which fills up the first hole.
Further, the organic filler is formed by coating method or printing processing technology.
Further, second hole longitudinal section is trapezoidal, rectangle or triangle.
Further, second hole is formed in organic filler using masking process.
Flexible display provided by the invention and preparation method thereof runs through the two simultaneously in dielectric layer and gate insulation layer setting The first hole for terminating at channel layer upper surface, is arranged organic matter layer in the first hole, then the second hole is formed in organic matter layer, Second hole deposits the second electrode lay.With this solution, it can be avoided and damage metal electrode when bending flexible display, mention High exhibit stabilization.
The above description is only an overview of the technical scheme of the present invention, in order to better understand the technical means of the present invention, And it can be implemented in accordance with the contents of the specification, and in order to allow above and other objects, features and advantages of the invention can It is clearer and more comprehensible, it is special below to lift preferred embodiment, and cooperate attached drawing, detailed description are as follows.
Detailed description of the invention
Fig. 1 is a kind of flow diagram of the preparation method of flexible display of the embodiment of the present invention.
Fig. 2 is a kind of structural schematic diagram of flexible display provided by the embodiment of the present invention.
Fig. 3 is the partial enlarged view of A in Fig. 2.
Fig. 4 is a kind of structural schematic diagram of flexible display opened up behind the first hole provided by the embodiment of the present invention.
Fig. 5 is a kind of structural representation of flexible display filled after organic filler provided by the embodiment of the present invention Figure.
Fig. 6 is a kind of structural schematic diagram of flexible display opened up behind the second hole provided by the embodiment of the present invention.
Specific embodiment
It is of the invention to reach the technical means and efficacy that predetermined goal of the invention is taken further to illustrate, below in conjunction with Attached drawing and preferred embodiment, to a kind of flexible display proposed according to the present invention and preparation method thereof and its specific embodiment party Formula, method, step, structure, feature and effect, detailed description is as follows.
For the present invention aforementioned and other technology contents, feature and effect refer to the preferable reality of schema in following cooperation Applying in the detailed description of example to be clearly presented.It is predetermined when that can reach to the present invention by the explanation of specific embodiment The technical means and efficacy that purpose is taken be able to more deeply and it is specific understand, however institute's accompanying drawings be only to provide with reference to Purposes of discussion is not intended to limit the present invention.
Fig. 1 to Fig. 3 is please referred to, Fig. 1 is a kind of flow diagram of the preparation method of flexible display;Fig. 2 is the present invention A kind of structural schematic diagram of flexible display provided by embodiment;Fig. 3 is the partial enlarged view of A in Fig. 2.As shown in Fig. 2, should Flexible display includes flexible base board 11, be set in sequence from the bottom to top on the flexible base board 11 channel layer 12, gate insulation layer 13, First electrode layer 14 and dielectric layer 15, wherein dielectric layer 15 coats first electrode layer 14 and is bonded superposition with gate insulation layer 13;? It is formed with the first hole 16 in the laminated construction that the channel layer 12, gate insulation layer 13, first electrode layer 14 and dielectric layer 15 are formed, is had Body, first hole 16 is through dielectric layer 15 and gate insulation layer 13 and terminates at 12 upper surface of channel layer;In the present embodiment, at this There is organic matter layer 17, which is adhered to the surface in the first hole 16, can absorb stress, this has on first hole 16 Machine nitride layer 17 obtains after removing a part by the organic filler 18 that can be at least entirely coated on 16 surface of the first hole;Organic matter Layer 17 constitutes the second hole 19, and the second electrode lay 20 is deposited in second hole 19.In detail, above-mentioned flexible display by with Lower method obtains, as shown in Figure 1.Specifically: sequentially form channel layer, gate insulation layer, first from the bottom to top on flexible substrates Electrode layer and dielectric layer, dielectric layer cladding first electrode layer are simultaneously bonded superposition with gate insulation layer;In dielectric layer and gate insulation layer The first hole for running through the dielectric layer and gate insulation layer is formed, which terminates at channel layer upper surface;It is formed at the first hole There is the organic filler that can absorb stress that can at least coat first hole surface completely;Remove part organic filler shape At the second hole, being formed between second hole and the first hole has the organic matter layer for absorbing stress;Second electrode is deposited in the second hole Layer.
It executes step: sequentially forming channel layer, gate insulation layer, first electrode layer and medium from the bottom to top on flexible substrates Layer, dielectric layer cladding first electrode layer are simultaneously bonded superposition with gate insulation layer.
The channel layer 12 is semiconductor structure layer, the as channel layer in thin film transistor (TFT) (TFT), which determines Working performance in thin film transistor (TFT) (TFT) should have the function of that low-power consumption, response be fast and simple process etc..In this reality It applies in example, which can be a-Si, p-Si, oxide semiconductor or other forms semiconductor layer, it is therefore intended that protect The working performance for demonstrate,proving thin film transistor (TFT), in the present embodiment without repeating.Specifically when being formed, when selection a-Si semiconductor When material, prepared using chemical vapor deposition method;When selecting p-Si semiconductor material to prepare channel layer 12, then adopt It is prepared with excimer laser annealing process;When preparing the channel layer 12 using oxide semiconductor, then PVD physical vapor is used Depositing operation.Due to the universal technique that above-mentioned process is the production of current semiconductor structure, do not repeat, but this field Those of ordinary skill should understand, and be achievable.
Gate insulation layer 13 is that the insulating layer of thin film transistor (TFT) (TFT) can be adopted in the present embodiment using at least double-layer structure It is prepared with substances such as SiOx, TEOS, SiNx, SiNO, specifically when production, PECVD, plasma-reinforced chemical gas can be used Mutually deposition or the preparation of other techniques.When preparing gate insulation layer 13, which wraps up in the channel layer 12 It is attached, and part is bonded with flexible base board 11.
First electrode layer 14 can be used Mo metal and prepared by PVD physical gas-phase deposition as conductive electrode, should Layer is set on the gate insulation layer 13.
Dielectric layer 15, as the insulating layer between electrode layer and device, structure can be used using at least double-layer structure PECVD, plasma reinforced chemical vapour deposition can be used specifically when production in the preparation of the substances such as SiOX, SiNx, SiNO Or other techniques.These techniques be it is commonly used in the art, do not repeat them here.
It executes step: forming the first hole for running through the dielectric layer and gate insulation layer in dielectric layer and gate insulation layer, this One hole terminates at channel layer upper surface.
It is damaged to solve electrode layer in using bending process, therefore, organic matter layer is used in the present embodiment 17 realize buffering to adsorb stress energy.Referring to FIG. 4, Fig. 4 is a kind of opening for flexible display provided by the embodiment of the present invention If the structural schematic diagram behind the first hole.As shown in figure 4, being provided with the first hole 16, which has run through dielectric layer 15 and grid Insulating layer 13 extends to the lower surface of gate insulation layer 13 by the upper surface of dielectric layer 15, and terminate and channel layer 12 Upper surface.When forming first hole 16, obtained using the method for dry etching, naturally it is also possible to be obtained by wet etching It arrives.When dry etching, it can be etched using physical chemistry, it is anti-by physical action and chemistry of the active ion to substrate It answers double action to etch, has the advantages that anisotropy and selectivity are good.The method is the universal method of integrated circuit fabrication process, Those skilled in the art should may be implemented, and not repeat herein.The first obtained hole 16 is according to the demand of the second electrode lay 20 Select different etching size and shape.In the present embodiment, the longitudinal section in first hole 16 is trapezoidal shape.Equally, in order to full The different demand of foot, which, which can be other, can satisfy the arbitrary shape that the second electrode lay 20 uses, for example, square Shape or triangle etc..
Execute step: be formed at the first hole can at least coat first hole surface completely can absorb stress Organic filler.Referring to FIG. 5, Fig. 5 is a kind of filling organic filler of flexible display provided by the embodiment of the present invention Structural schematic diagram afterwards.As shown in figure 5, since the first hole 16 is the second electrode lay 20 for accommodating material as metal, in order to Guarantee to reduce the damage to the second electrode lay 20 in bending, after having obtained the first hole 16, is formed and be used in first hole 16 Absorb the buffer layer of stress energy.Specifically, organic filler is filled in first hole 16 by coating method or printing type The film-forming process of photoresist can be beaten using coating process such as ink property OLED material with ink-jet in 18, such as exposure manufacture process India side formula is realized.Specifically, which at least wants that the surface in first hole 16 can be coated, and has certain thickness Degree, such as the thickness of thinnest part should be greater than 1 micron.In order to improve the convenience of preparation, organic filler 18 be covered with this first Hole 16.Wherein organic filler 18 can be acrylic resin or photosensitive material or transparent resin material.When filling, Organic filler 18 is formed in the first hole 16 by way of solution, and the regular hour is needed to stablize, so, it needs to adopt It is dried with the mode of heating.In addition, the organic filler 18 uses resin material.
Execute step: removal part organic filler forms the second hole, is formed to have between second hole and the first hole and be inhaled Receive the organic matter layer of stress.Referring to FIG. 6, Fig. 6 opens up second for a kind of flexible display provided by the embodiment of the present invention Structural schematic diagram behind hole.As shown in fig. 6, part organic filler 18 is removed after organic filler 18 is stablized, then the The surface in one hole 16, which is formed, has the organic matter layer 17 for absorbing stress energy, which is to have completely enclosed first hole 16 Inner surface, which has uniform thickness, and thickness is preferably between 2-4 microns.Specifically in formation, this has When machine nitride layer 17, obtained using masking process.The organic matter layer 17 forms the second hole 19.
It executes step: depositing the second electrode lay in the second hole.After the formation for completing organic matter layer 17, on the second hole 19 Deposit the second electrode lay 20.The second electrode lay 20 can pass through PVD physical gas-phase deposition using the preparation of the materials such as Mo, Al It obtains.The material of the second electrode lay 20 can be with first electrode layer 14 it is identical, can also be different.Deposit the second electrode lay When 20, the second hole 19 is filled up and closes second hole 19, then the second electrode lay 20 can also be partially covered on dielectric layer 15 upper surface.Meanwhile when the second electrode lay 20 is partially covered on the upper surface of dielectric layer 15, combined with dielectric layer 15 Part is also provided with organic matter layer, and the strain generated in the process of bending is buffered with this.In embodiments of the present invention, second hole 19 Longitudinal section is trapezoidal shape, rectangle or triangle etc..
After foring the second electrode lay 20, the graphical of the second electrode lay 20 is completed using masking process.Purpose is Realize metal electrode and metal routing function.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, any to be familiar with this profession Technical staff, it is without departing from the scope of the present invention, a little when being made using above-mentioned revealed technology contents Change or modification etc., any modification, equivalent replacement or improvement done within the spirit and principles of the present invention etc., should all wrap Containing within protection scope of the present invention.

Claims (10)

1. a kind of preparation method of flexible display, which is characterized in that the preparation method includes:
Sequentially form channel layer, gate insulation layer, first electrode layer and dielectric layer, dielectric layer cladding from the bottom to top on flexible substrates First electrode layer is simultaneously bonded superposition with gate insulation layer;
The first hole for running through the dielectric layer and gate insulation layer is formed in dielectric layer and gate insulation layer, which terminates at channel Layer upper surface;
The organic filler that can absorb stress that can at least coat first hole surface completely is formed at the first hole;
It removes part organic filler and forms the second hole, being formed between second hole and the first hole has the organic matter for absorbing stress Layer;
The second electrode lay is deposited in the second hole, wherein the second electrode lay is partially covered on the upper surface of dielectric layer, the second electrode lay Part in conjunction with dielectric layer is also provided with organic matter layer.
2. the preparation method of flexible display as described in claim 1, it is characterised in that: when forming organic filler, by the One Kong Buman.
3. the preparation method of flexible display as described in claim 1, it is characterised in that: added by coating method or printing Work technique forms the organic filler.
4. the preparation method of flexible display as described in claim 1, it is characterised in that: second hole longitudinal section is ladder Shape, rectangle or triangle.
5. the preparation method of flexible display as described in claim 1, it is characterised in that: using masking process in organic filling Second hole is formed in object.
6. a kind of flexible display characterized by comprising
Flexible base board;
Channel layer, gate insulation layer, first electrode layer and the dielectric layer being arranged from bottom to top on flexible substrates, wherein dielectric layer Cladding first electrode layer is simultaneously bonded superposition with gate insulation layer;
First hole through dielectric layer and gate insulation layer and terminates at channel layer upper surface;
Organic matter layer is adhered to the surface in the first hole, can absorb stress;And
The second electrode lay is deposited on the second hole, wherein the second electrode lay is partially covered on the upper surface of dielectric layer, second electrode Part of the layer in conjunction with dielectric layer is also provided with organic matter layer.
7. flexible display as claimed in claim 6, it is characterised in that: the organic matter layer is by can at least be entirely coated on It is obtained after organic filler removal a part of first hole surface, the organic filler fills up the first hole.
8. flexible display as claimed in claim 7, it is characterised in that: the organic filler is by coating method or beats Print processing technology is formed.
9. flexible display as claimed in claim 6, it is characterised in that: second hole longitudinal section is trapezoidal, rectangle or three It is angular.
10. flexible display as claimed in claim 6, it is characterised in that: second hole is filled out using masking process organic It fills in object and is formed.
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CN107359177B (en) * 2017-06-28 2020-03-31 武汉华星光电半导体显示技术有限公司 Manufacturing method of flexible back plate, liquid crystal display panel and OLED display panel
CN109523914B (en) * 2017-09-19 2021-10-15 深圳天珑无线科技有限公司 Protection device, display panel and electron device of flexible screen
CN109860143B (en) * 2019-02-27 2022-01-14 京东方科技集团股份有限公司 Array substrate, display device, preparation method and splicing display device

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CN104217675A (en) * 2013-05-30 2014-12-17 三星显示有限公司 Organic light emitting diode display and pixel circuit of display device
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CN103545320A (en) * 2013-11-11 2014-01-29 京东方科技集团股份有限公司 Display substrate and flexible display device with display substrate
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