CN111430378B - Manufacturing method of display panel - Google Patents
Manufacturing method of display panel Download PDFInfo
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- CN111430378B CN111430378B CN202010286984.XA CN202010286984A CN111430378B CN 111430378 B CN111430378 B CN 111430378B CN 202010286984 A CN202010286984 A CN 202010286984A CN 111430378 B CN111430378 B CN 111430378B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 91
- 239000010410 layer Substances 0.000 claims abstract description 89
- 238000000034 method Methods 0.000 claims abstract description 51
- 239000002121 nanofiber Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000002161 passivation Methods 0.000 claims abstract description 26
- 239000004020 conductor Substances 0.000 claims abstract description 24
- 239000011241 protective layer Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 10
- 239000007788 liquid Substances 0.000 claims abstract description 7
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims abstract description 4
- 238000011161 development Methods 0.000 claims abstract description 3
- 229920000642 polymer Polymers 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000000243 solution Substances 0.000 claims description 12
- 239000002904 solvent Substances 0.000 claims description 8
- 238000009987 spinning Methods 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 3
- 238000001523 electrospinning Methods 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims description 3
- 229920002239 polyacrylonitrile Polymers 0.000 claims description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 3
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 3
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 3
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 5
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 239000011800 void material Substances 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010041 electrostatic spinning Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present disclosure provides a method for manufacturing a display panel, including: step S1: providing a substrate, and forming a passivation protection layer on the substrate; step S2: coating a photoresist material on one side of the passivation protective layer, which is far away from the substrate base plate, and carrying out exposure and development on the photoresist material to form a photoresist pattern; step S3: forming a nanofiber layer on one side of the photoresist pattern, which is far away from the passivation protective layer; step S4: depositing a conductive material on one side of the passivation protective layer away from the substrate base plate, wherein the conductive material covers the nanofiber layer; and step S5: and removing the photoresist pattern, the nanofiber layer and the conductive material on the photoresist pattern by using a photoresist stripping solution to form a conductive electrode pattern. By utilizing the high specific surface area and the void space of the nanofiber layer, the contact area between the photoresist stripping liquid and the photoresist can be increased, and the diffusion speed of the photoresist stripping liquid in the nanofiber layer can be increased, so that the photoresist stripping effect is optimized, the photoresist stripping time is shortened, and the production efficiency is improved.
Description
Technical Field
The invention relates to the technical field of display, in particular to a manufacturing method of a display panel.
Background
The production of the array substrate needs three parts of film formation, yellow light and etching, and in order to simplify the process and improve the productivity, the process design of a mask (5) process, a mask (4) process and a mask (3) process is proposed in recent years.
In the traditional method for realizing the photomask film formation of the passivation protective layer and the transparent electrode by using the 3mask process technology, a gap is designed in a light resistance layer, so that light resistance stripping liquid is permeated through the gap and is contacted with light resistance in the light resistance layer, and the light resistance is stripped from the surface of the transparent electrode. The conventional notch method mainly includes the methods of setting taper angles on the side edges of the photoresist layer or generating notches by stacking double-layer photoresists, but the methods all have the problems of long photoresist stripping time, residual photoresists and transparent electrodes after photoresist stripping, poor operability of a photoresist stripping process and the like.
In summary, the photoresist stripping process in the existing 3mask process has the problems of long photoresist stripping time and residual photoresist and transparent electrode after stripping. Therefore, it is necessary to provide a method for manufacturing a display panel to improve the defect.
Disclosure of Invention
The embodiment of the disclosure provides a manufacturing method of a display panel, which is used for solving the problems of long photoresist stripping time and residual photoresist and transparent electrodes after stripping in the existing photoresist stripping process in the 3mask process.
The embodiment of the disclosure provides a manufacturing method of a display panel, which includes:
step S1: providing a substrate, and forming the passivation protection layer on the substrate;
step S2: coating a photoresist material on one side of the passivation protective layer, which is far away from the substrate base plate, and carrying out exposure and development on the photoresist material to form a photoresist pattern;
step S3: forming a nanofiber layer on one side, away from the passivation protective layer, of the photoresist pattern;
step S4: depositing a conductive material on one side of the passivation protection layer far away from the substrate base plate, wherein the conductive material covers the nanofiber layer; and
step S5: and removing the photoresist pattern, the nanofiber layer and the conductive material on the photoresist pattern by using photoresist stripping liquid to form a conductive electrode pattern.
According to an embodiment of the present disclosure, in the step S3, the method for forming the nanofiber layer includes an electrospinning method.
According to an embodiment of the present disclosure, the step S3 includes:
step S31: dissolving a polymer in a solvent to obtain a polymer spinning solution, and injecting the polymer spinning solution into an injection device; and
step S32: and under the action of an external electric field, forming a nanofiber layer on one side, away from the passivation protective layer, of the photoresist pattern through the jet device.
According to an embodiment of the present disclosure, in the step S32, the process of forming the nanofiber layer occurs in a flowing gas atmosphere.
According to an embodiment of the present disclosure, the gas includes N2 or Ar.
According to an embodiment of the present disclosure, the polymer includes polyvinyl alcohol, polyvinyl pyrrolidone, or polyacrylonitrile.
According to an embodiment of the present disclosure, the diameter of the nanofibers in the nanofiber layer is between 50nm and 200 nm.
According to an embodiment of the present disclosure, the step S1 includes:
step S11: providing the substrate, forming a first metal layer on the substrate, and patterning the first metal layer by adopting a first photomask manufacturing process to form a grid;
step S12: sequentially forming a gate insulating layer, an amorphous silicon layer and a second metal layer on the gate and the substrate which is not covered by the gate;
step S13: patterning the active layer and the second metal layer by adopting a second photomask process to form an active layer, a source electrode and a drain electrode corresponding to the grid electrode; and
step S14: forming the passivation protection layer on the substrate, wherein the passivation protection layer covers the source electrode, the drain electrode and the active layer.
According to an embodiment of the present disclosure, in the step S13, the mask used in the second masking process is a halftone mask or a gray tone mask.
According to an embodiment of the present disclosure, the conductive material includes indium tin oxide.
The beneficial effects of the disclosed embodiment are as follows: according to the manufacturing method of the display panel, the nanofiber layer is formed between the photoresist pattern and the conductive material, and the high specific surface area and the large void space of the nanofiber layer are utilized, so that the contact area of the photoresist stripping liquid and the photoresist can be increased, the diffusion speed of the photoresist stripping liquid in the nanofiber layer can be increased, the photoresist stripping effect is optimized, the residues of the stripped photoresist and the conductive material are eliminated, the photoresist stripping time is shortened, and the production efficiency is improved.
Drawings
In order to illustrate the embodiments or the technical solutions in the prior art more clearly, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some of the disclosed embodiments, and that other drawings can be obtained by those skilled in the art without inventive effort.
Fig. 1 is a schematic flow chart illustrating a method for manufacturing a display panel according to an embodiment of the disclosure;
FIG. 2 is a schematic diagram of a manufacturing process according to an embodiment of the disclosure;
fig. 3 is a schematic cross-sectional structure diagram of a display panel according to an embodiment of the disclosure.
Detailed Description
The following description of the various embodiments refers to the accompanying drawings, which illustrate specific embodiments in which the disclosure may be practiced. Directional phrases used in this disclosure, such as [ upper ], [ lower ], [ front ], [ back ], [ left ], [ right ], [ inner ], [ outer ], [ side ], etc., refer only to the directions of the attached drawings. Accordingly, the directional terms used are used for the purpose of illustration and understanding of the present disclosure, and are not used to limit the present disclosure. In the drawings, elements having similar structures are denoted by the same reference numerals.
The present disclosure is further described with reference to the following drawings and detailed description.
The present disclosure provides a method for manufacturing a display panel, which is described in detail below with reference to fig. 1 to 3. Fig. 1 is a schematic flow chart of a manufacturing method of a display panel according to an embodiment of the disclosure, and fig. 2 is a schematic view of a manufacturing process according to an embodiment of the disclosure. As shown in fig. 1, the manufacturing method of the display panel includes:
step S1: providing a substrate 11, and forming the passivation protection layer 12 on the substrate 11;
step S2: coating a photoresist material 13 on one side of the passivation protection layer 12 away from the substrate base plate 11, and exposing and developing the photoresist material 13 to form a photoresist pattern 131;
step S3: forming a nanofiber layer 14 on the side of the photoresist pattern 131 far away from the passivation protective layer 12;
step S4: depositing a conductive material 15 on the side of the passivation protection layer 12 away from the substrate 11, wherein the conductive material 15 covers the nanofiber layer 14; and
step S5: the photoresist pattern 131 and the nanofiber layer 14 and the conductive material 15 on the photoresist pattern 131 are removed with a photoresist stripper, forming a conductive electrode pattern 151.
As shown in fig. 2, in step S2, the photoresist 13 is exposed and developed by using a photomask to form photoresist patterns 131 arranged at intervals, and a gap is formed between adjacent photoresist patterns 131.
In step S3, the method of forming the nanofiber layer 14 is an electrospinning method.
Specifically, the step S3 includes:
step S31: dissolving a polymer in a solvent to obtain a polymer spinning solution, and injecting the polymer spinning solution into an injection device; and
step S32: under the action of an applied electric field, a nanofiber layer 14 is formed on the side, away from the substrate 11, of the photoresist pattern 131 by the jet device.
The polymer is a conductive polymer, so that under the condition of an external electric field, due to the combined action of surface coulomb repulsion and surface tension, the polymer spinning solution is charged and is ejected from a Taylor tip cone of a jet device, the electrostatic repulsion among droplets can overcome the surface tension, electrostatic force is used as traction force, polymer jet is stretched and cured into criss-cross nanofibers, a nanofiber layer 14 is formed, and the accuracy of the Taylor tip cone of the jet device can ensure that the nanofiber layer 14 is formed on the surface of the photoresist patterns 131 and does not fall into gaps between adjacent photoresist patterns 131. Therefore, the high-selectivity stripping of the light resistance can be realized only by forming the nanofiber layer on the surface of the light resistance to be stripped.
The nanofiber layer 14 has a larger specific surface area and a high-porosity reticular overlapping structure, and is arranged between the photoresist pattern 131 and the conductive material 15, so that the contact surface of the photoresist pattern 131 and the nanofiber layer 14 is exposed by utilizing the characteristics of the nanofiber layer 13, the exposed area of the photoresist pattern 131 is increased, the contact area of the photoresist pattern 131 and a photoresist stripping solution is increased, the photoresist stripping effect is optimized, and the residues of the photoresist and the conductive material after the photoresist is stripped are eliminated; when the conductive material 15 is deposited, the conductive material particles can be dispersed, which is beneficial to the penetration of the photoresist stripping solution and accelerates the photoresist stripping speed. The high porosity of the nanofiber layer 13 also increases the permeation rate of the photoresist stripper during the photoresist stripping process, so that the photoresist pattern 121 and the conductive electrode pattern 141 can be effectively separated.
In the embodiment of the present disclosure, the material of the polymer is polyvinyl alcohol, and the solvent of the corresponding polymer is water or other high molecular solvent with better volatility, which is not limited herein. Meanwhile, in the embodiment of the disclosure, the photoresist material and the nanofiber layer are both polymers, and have good affinity with the photoresist stripper, which also increases the contact area between the photoresist pattern and the photoresist stripper.
Of course, in some embodiments, the polymer material may be polyvinylpyrrolidone or polyacrylonitrile, and the nanofiber layer 13 with the same or similar structure may be formed.
In the embodiment of the present disclosure, the solvent is continuously volatilized when the polymer is sprayed, and in order to prevent the volatilized solvent from affecting the solidification effect of the polymer, the process should be performed in the flowing gas so that the flowing gas carries away the high molecular solvent which may be generated.
Specifically, N2, which is a gas used in the embodiments of the present disclosure, may be, in some embodiments, a gas such as Ar, which has good stability and does not react with the polymer and other films, and is not limited herein.
In the embodiment of the present disclosure, the nanofiber film layer 13 is prepared by an electrostatic spinning method, and the diameter of the nanofibers in the nanofiber layer 13 can be adjusted according to the size of the photoresist pattern 121 by only adjusting the taylor tip cone of the jet device, so that the diameter of the nanofibers can be appropriately reduced for the photoresist pattern with a smaller area, so as to increase the exposed area of the corresponding photoresist pattern.
Preferably, in the nanofiber layer 13, the diameter of the nanofiber should be between 50nm and 2000 nm.
In the embodiment of the present disclosure, the conductive material is a transparent conductive material, such as ito, and the conductive electrode pattern is formed after the photoresist is stripped, which can be used as a pixel electrode of a display panel.
In the embodiment of the present disclosure, the 3mask process is taken as an example, the process of exposing and developing the photoresist 13 by using the mask in step S2 is a third mask process, and the characteristics of the nanofiber film layer 13 are utilized to remove the photoresist pattern and the conductive material on the photoresist pattern, so as to complete the fabrication of the passivation layer and the conductive electrode pattern in one mask process. The disclosed embodiment further includes a first two mask processes in step S1, which is described in detail below with reference to FIG. 3. Fig. 3 is a schematic cross-sectional structure view of a display panel according to an embodiment of the disclosure, where the step S1 includes:
step S11: providing the substrate 11, forming a first metal layer on the substrate 11, and performing patterning processing on the first metal layer by using a first photomask process to form a gate 16;
step S12: forming a gate insulating layer 17, an amorphous silicon layer and a second metal layer in this order on the gate electrode 16 and the substrate 11 not covered by the gate electrode 16;
step S13: patterning the amorphous silicon layer and the second metal layer by using a second photo-masking process to form an active layer 18, a source electrode 191 and a drain electrode 192 corresponding to the gate electrode 16; and
step S14: the passivation protection layer 12 is formed on the substrate base plate 11, and the passivation protection layer 12 covers the source electrode 191, the drain electrode 192, and the active layer 18.
In the present disclosure, in the step S13, the mask used in the second masking process is a halftone mask, and in some embodiments, a gray tone mask may also be used, which is not limited herein.
The beneficial effects of the disclosed embodiment are as follows: the embodiment of the disclosure provides a photoresist stripping method, which forms a nanofiber layer between a photoresist pattern and a conductive material, and utilizes the high specific surface area and the larger void space of the nanofiber layer to increase the contact area between a photoresist stripping solution and a photoresist and increase the diffusion speed of the photoresist stripping solution in the nanofiber layer, thereby optimizing the photoresist stripping effect, reducing the photoresist stripping time and improving the production efficiency.
In summary, although the present disclosure has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present disclosure, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present disclosure, so that the scope of the present disclosure is defined by the appended claims.
Claims (9)
1. A method for manufacturing a display panel is characterized by comprising the following steps:
step S1: providing a substrate, and forming a passivation protection layer on the substrate;
step S2: coating a photoresist material on one side of the passivation protective layer, which is far away from the substrate base plate, and carrying out exposure and development on the photoresist material to form a photoresist pattern;
step S3: forming a nanofiber layer on one side, away from the passivation protective layer, of the photoresist pattern;
step S4: depositing a conductive material on one side of the passivation protection layer far away from the substrate base plate, wherein the conductive material covers the nanofiber layer; and
step S5: removing the photoresist pattern, the nanofiber layer and the conductive material on the photoresist pattern by using photoresist stripping liquid to form a conductive electrode pattern;
wherein, in the step S3, the method for forming the nanofiber layer includes an electrospinning method.
2. The method for manufacturing a display panel according to claim 1, wherein the step S3 includes:
step S31: dissolving a polymer in a solvent to obtain a polymer spinning solution, and injecting the polymer spinning solution into an injection device; and
step S32: and under the action of an external electric field, forming a nanofiber layer on one side, away from the passivation protective layer, of the photoresist pattern through the jet device.
3. The method for manufacturing a display panel according to claim 2, wherein in the step S32, the process of forming the nanofiber layer occurs in a flowing gas atmosphere.
4. The method of claim 3, wherein the gas comprises N2 or Ar.
5. The method of claim 2, wherein the polymer comprises polyvinyl alcohol, polyvinyl pyrrolidone, or polyacrylonitrile.
6. The method of claim 1, wherein the diameter of the nanofibers in the nanofiber layer is between 50nm and 200 nm.
7. The method for manufacturing a display panel according to claim 1, wherein the step S1 includes:
step S11: providing the substrate, forming a first metal layer on the substrate, and patterning the first metal layer by adopting a first photomask manufacturing process to form a grid;
step S12: sequentially forming a gate insulating layer, an amorphous silicon layer and a second metal layer on the gate and the substrate which is not covered by the gate;
step S13: patterning the amorphous silicon layer and the second metal layer by adopting a second photomask manufacturing process to form an active layer, a source electrode and a drain electrode corresponding to the grid electrode; and
step S14: forming the passivation protection layer on the substrate, wherein the passivation protection layer covers the source electrode, the drain electrode and the active layer.
8. The method of claim 7, wherein in the step S13, the mask used in the second masking process is a halftone mask or a gray tone mask.
9. The method according to claim 1, wherein the conductive material comprises indium tin oxide.
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| CN202010286984.XA CN111430378B (en) | 2020-04-13 | 2020-04-13 | Manufacturing method of display panel |
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| CN202010286984.XA CN111430378B (en) | 2020-04-13 | 2020-04-13 | Manufacturing method of display panel |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105244366A (en) * | 2015-11-23 | 2016-01-13 | 武汉华星光电技术有限公司 | Flexible display substrate and manufacturing method thereof |
| CN105914183A (en) * | 2016-06-22 | 2016-08-31 | 深圳市华星光电技术有限公司 | TFT (Thin Film Transistor) substrate manufacturing method |
| CN106783885A (en) * | 2017-01-03 | 2017-05-31 | 深圳市华星光电技术有限公司 | The preparation method of TFT substrate |
| US20170250344A1 (en) * | 2016-02-29 | 2017-08-31 | Samsung Display Co., Ltd | Organic light-emitting display apparatus and method of manufacturing the same |
| CN110854067A (en) * | 2019-10-22 | 2020-02-28 | 深圳市华星光电技术有限公司 | Manufacturing method of display panel |
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2020
- 2020-04-13 CN CN202010286984.XA patent/CN111430378B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105244366A (en) * | 2015-11-23 | 2016-01-13 | 武汉华星光电技术有限公司 | Flexible display substrate and manufacturing method thereof |
| US20170250344A1 (en) * | 2016-02-29 | 2017-08-31 | Samsung Display Co., Ltd | Organic light-emitting display apparatus and method of manufacturing the same |
| CN105914183A (en) * | 2016-06-22 | 2016-08-31 | 深圳市华星光电技术有限公司 | TFT (Thin Film Transistor) substrate manufacturing method |
| CN106783885A (en) * | 2017-01-03 | 2017-05-31 | 深圳市华星光电技术有限公司 | The preparation method of TFT substrate |
| CN110854067A (en) * | 2019-10-22 | 2020-02-28 | 深圳市华星光电技术有限公司 | Manufacturing method of display panel |
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