CN111834217B - Display panel preparation method and display device - Google Patents
Display panel preparation method and display device Download PDFInfo
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- CN111834217B CN111834217B CN202010669329.2A CN202010669329A CN111834217B CN 111834217 B CN111834217 B CN 111834217B CN 202010669329 A CN202010669329 A CN 202010669329A CN 111834217 B CN111834217 B CN 111834217B
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- electrode layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
Abstract
The invention provides a preparation method of a display panel and a display device. The preparation method of the display panel comprises the following steps: a substrate is provided. A barrier layer is formed on the substrate. And an electrode layer on the barrier layer. A photoresist layer is formed on the electrode layer. And forming a protective layer on the substrate, wherein the protective layer covers the barrier layer and the exposed surface of the electrode layer. And stripping the photoresist layer by using stripping liquid. And removing the protective layer.
Description
Technical Field
The invention relates to the field of display equipment, in particular to a display panel preparation method and a display device.
Background
In the existing display panel process, since metals such as copper and the like use Photoresist (PR) in the metal patterning process, metal corrosion occurs in the subsequent photoresist stripping process, and the metal corrosion causes a metal emptying phenomenon. For example, copper dishing can form metal tips, and electrostatic (ElectroStatic Discharge, ESD) breakdown phenomena are easily generated in different layers of metals in subsequent manufacturing processes, which greatly affects the product yield. After patterning of metals such as copper, the remaining photoresist is removed by using a photoresist stripper, and the photoresist stripper contains an organic substance having an amine group, which dissociates in water to form an alkaline environment and corrode the metals such as copper, thereby forming metal hollows.
Molybdenum oxide belongs to an amorphous structure, has loose film quality, has a large number of defects inside, is used as a substrate barrier (barrier) layer when preparing metal, but is easily corroded by photoresist stripping liquid, so that a hollowing phenomenon also occurs.
Disclosure of Invention
The invention aims to provide a preparation method of a display panel and a display device, which are used for solving a series of problems in the prior art that photoresist stripping liquid can corrode metal and a substrate barrier layer containing metal oxide under the metal so as to cause a hollowing phenomenon.
In order to achieve the above object, the present invention provides a method for manufacturing a display panel, including the steps of:
a substrate is provided. A barrier layer is formed on the substrate. And an electrode layer on the barrier layer. A photoresist layer is formed on the electrode layer. And forming a protective layer on the substrate, wherein the protective layer covers the barrier layer and the exposed surface of the electrode layer. And stripping the photoresist layer by using stripping liquid. And removing the protective layer.
Further, the step of forming the protective layer on the substrate includes the steps of: and forming the protective layer on the substrate and the exposed surfaces of the barrier layer and the electrode layer by a physical vapor deposition method.
Further, the protective layer contains carbon.
Further, the thickness of the protective layer is 10-500 angstroms.
Further, the step of removing the protective layer includes the steps of: and gasifying the protective layer by a plasma gas bombardment method, and removing the protective layer.
Further, the gas used in the plasma gas bombardment method is oxygen or hydrogen.
Further, the step of forming the photoresist layer on the electrode layer includes the steps of: patterning the barrier layer and the electrode layer simultaneously by an etching process, and making the width of the side of the electrode layer away from the barrier layer smaller than the width of the side of the barrier layer away from the electrode layer.
Further, the step of patterning the barrier layer and the electrode layer comprises the steps of: and (3) introducing oxygen to ash part of the photoresist layer and stripping the photoresist layer, so that the width of the photoresist layer is equal to the width of one side of the electrode layer away from the barrier layer.
Further, the barrier layer comprises a metal oxide. The electrode layer contains a metal. The photoresist layer includes an anti-corrosion agent therein.
The invention also provides a display device, which comprises the display panel prepared by the display panel preparation method.
The invention has the advantages that: according to the preparation method of the display panel and the display device, the exposed surface of the barrier layer is covered with the protective layer containing the carbon material, so that metal oxides in the barrier layer are prevented from being corroded and hollowed out, the protective layer prepared by the carbon material can be removed without affecting other devices of the display panel, and the yield of the display panel and the stability of the display device are improved. Meanwhile, the photoresist layer is provided with an anti-corrosion agent, so that metal in the electrode layer can be prevented from being corroded and hollowed out.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a preparation flow of a preparation method according to an embodiment of the present invention;
FIG. 2 is a schematic view of a layered structure of a panel after depositing a metal material layer in step S20 according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a layered structure of a panel after the photoresist layer is prepared in step S20 according to an embodiment of the present invention;
FIG. 4 is a schematic view of the laminated structure of the panel after step S30 in the embodiment of the present invention;
FIG. 5 is a schematic view of the laminated structure of the panel after step S40 in the embodiment of the present invention;
FIG. 6 is a schematic view of the layered structure of the panel after step S50 in the embodiment of the invention;
fig. 7 is a schematic diagram of a panel layered structure after step S60 in an embodiment of the invention.
The components in the figure are shown as follows:
a substrate 10;
a barrier layer 20; an electrode layer 30;
a metal oxide material layer 21; a metal material layer 31;
a photoresist layer 40; and a protective layer 50.
Detailed Description
The following description of the preferred embodiments of the present invention, which will be described in sufficient detail to enable those skilled in the art to practice the invention, is provided with a further understanding of the invention, and is made clear to a person skilled in the art by reference to the accompanying drawings. The present invention may be embodied in many different forms of embodiments of the invention, the scope of which is not limited to only the embodiments described herein.
In the drawings, like structural elements are referred to by like reference numerals and components having similar structure or function are referred to by like reference numerals. The dimensions and thicknesses of each component shown in the drawings are arbitrarily shown, and the present invention is not limited to the dimensions and thicknesses of each component. The thickness of the components is exaggerated in some places in the drawings for clarity of illustration.
Furthermore, the following description of various inventive embodiments is provided with reference to the accompanying drawings, which illustrate specific inventive embodiments in which the invention may be practiced. Directional terms, such as "upper", "lower", "front", "rear", "left", "right", "inner", "outer", "side", etc., in the present invention are merely referring to the directions of the attached drawings, and thus, directional terms are used for better, more clear explanation and understanding of the present invention, rather than indicating or implying that the apparatus or element being referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
When some element is described as being "on" another element, the element may be directly on the other element; there may also be an intermediate member that is placed on the intermediate member and the intermediate member is placed on another member. When an element is referred to as being "mounted to" or "connected to" another element, it can be directly "mounted to" or "connected to" the other element or be indirectly "mounted to" or "connected to" the other element via an intervening element.
The embodiment of the invention provides a display device which is provided with a display panel, wherein the display panel is used for providing a display picture for the display device. The display device can be any product or component with a display function, such as a mobile phone, a tablet computer, a notebook computer and the like.
As shown in fig. 7, the display panel has a substrate 10, a barrier layer 20 and an electrode layer 30.
The substrate 10 is used to protect the whole structure of the display panel, and may be an insulating substrate such as a glass substrate or a quartz substrate.
The barrier layer 20 is disposed on a surface of the substrate 10, and is used for protecting the electrode layer 30. The barrier layer 20 is made of a metal oxide material, which may be molybdenum oxide.
The electrode layer 30 is disposed on a surface of the barrier layer 20 remote from the substrate 10, and is used to transmit power to devices in the display panel. The electrode layer 30 is made of a metal material having excellent conductivity, and the metal material may be copper or aluminum.
The embodiment of the invention also provides a preparation method for preparing the display panel, the preparation flow is shown in figure 1, and the preparation method comprises the following preparation steps:
step S10) provides a substrate 10: an insulating substrate is prepared, which may be a glass substrate, a quartz substrate, or the like. And the substrate 10 is cleaned.
Step S20) preparing the barrier layer 20 and the electrode layer 30:
a layer of metal oxide material is deposited on a surface of the substrate 10 and a layer of metal material is deposited on a surface of the metal oxide material layer 21 remote from the substrate 10 to form the layered structure shown in fig. 2. Wherein, the metal oxide material can adopt molybdenum oxide, and the metal material can adopt copper or aluminum.
A photoresist layer 40 is prepared on the metal material layer 31 by a yellow light process, and the metal oxide material layer 21 and the metal material layer 31 are simultaneously patterned by the photoresist layer 40 and an etching solution. As shown in fig. 3, the metal oxide material layer 21 forms the barrier layer 20, the metal material layer 31 forms the electrode layer 30, the photoresist layer 40 is provided on a surface of the electrode layer 30 away from the barrier layer 20, and a width of a side of the electrode layer 30 away from the barrier layer 20 is smaller than a width of a side of the barrier layer 20 away from the electrode layer 30.
The photoresist layer 40 contains an anti-corrosion agent, which is used for protecting the electrode layer 30 and preventing the electrode layer 30 from being corroded by photoresist layer 40 stripping liquid in the subsequent process. The corrosion inhibitor may be one or more of 2-aminocyclohexanol, 2-aminocyclopentanol.
Step S30) peeling off the excess photoresist layer 40:
an over-etching phenomenon occurs when the barrier layer 20 and the electrode layer 30 are etched using an etching solution, as shown in fig. 3, an inclined slope of a certain angle occurs on the etched sides of the barrier layer 20 and the electrode layer 30, and the contact surface width of the electrode layer 30 and the photoresist layer 40 is smaller than the width of the photoresist layer 40, so that an unnecessary portion where no part is contacted occurs at the edge of the photoresist layer 40. Oxygen is introduced into the preparation chamber to ash the photoresist layer 40, and the edge ashing rate of the photoresist layer 40 is greater than the middle ashing rate in the ashing process, so that the redundant part of the edge of the photoresist layer 40 is removed, and the width of the photoresist layer 40 is equal to the width of the electrode layer 30 away from one surface of the barrier layer 20, so that a layered structure as shown in fig. 4 is formed.
Step S40) preparation of protective layer 50:
a protective layer 50 shown in fig. 5 is formed by depositing a carbon material layer on a surface of the photoresist layer 40 remote from the electrode layer 30 and on the exposed surface of the barrier layer 20 and the electrode layer 30 not in contact with the photoresist layer 40 and the substrate 10 by physical vapor deposition (Physical Vapor Deposition, PVD), and the protective layer 50 on the exposed surface of the barrier layer 20 and the electrode layer 30 extends to the protective surface of the substrate 10. The thickness of the protective layer 50 is 10-500 angstroms, which is used to protect the barrier layer 20 from being corroded by the photoresist layer 40 stripping solution in the subsequent process.
Step S50) stripping the photoresist layer 40:
the resist layer 40 is swelled and dissolved by the stripping liquid, so that it is stripped from the surface of the electrode layer 30, and the protective layer 50 covering the resist layer 40 is stripped together, forming a layered structure as shown in fig. 6. The stripping liquid is a composition of organic amine and polar organic solvent, wherein the organic amine can be one or more of amine compounds such as ethanolamine (MEA), dimethylacetamide (DMAC), N-methylformamide (NMF), N-Methyldiethanolamine (MDEA) and the like, and the polar organic solvent can be one or more of compounds such as Diethylene Glycol Methyl Ether (DGME), diethylene glycol monobutyl ether (BDG), dimethyl sulfoxide (DMSO) and the like.
Step S60) removing the protective layer 50:
oxygen or hydrogen is introduced into the preparation chamber, and the protective layer 50 on the barrier layer 20 and the electrode layer 30 is removed by means of plasma bombardment, so that carbon materials in the protective layer 50 react with the oxygen or hydrogen and are gasified to generate C-O compounds or C-H compounds, and the layered structure shown in fig. 7 is formed on the premise of not affecting other devices.
According to the preparation method adopted by the display panel in the embodiment of the invention, the exposed surface of the barrier layer 20 is covered with the protective layer 50 containing the carbon material, so that the metal oxide in the barrier layer 20 is prevented from being corroded and hollowed out, the covering capability of the subsequent film layer on the exposed surfaces of the barrier layer 20 and the electrode layer 30 is improved, the protective layer 50 prepared by the carbon material can be removed without affecting other devices of the display panel, and the yield of the display panel and the stability of the display device are improved.
Although the invention herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present invention. It is therefore to be understood that numerous modifications may be made to the illustrative embodiments and that other arrangements may be devised without departing from the spirit and scope of the present invention as defined by the appended claims. It should be understood that the different dependent claims and the features described herein may be combined in ways other than as described in the original claims. It is also to be understood that features described in connection with separate embodiments may be used in other described embodiments.
Claims (10)
1. A method for manufacturing a display panel, comprising the steps of:
providing a substrate;
forming a barrier layer and an electrode layer on the substrate from bottom to top, wherein the barrier layer and the electrode layer are formed with inclined planes with continuously changing widths on the first side of the display panel, and the width of the lower surface of the barrier layer is larger than that of the upper surface of the electrode layer;
forming a photoresist layer on the electrode layer, the photoresist layer being flush with an outer side of an upper surface of the electrode layer on the first side;
forming a protective layer on the exposed part of the substrate, the inclined surface and the upper surface of the photoresist layer, wherein the protective layer covers the barrier layer and the exposed surface of the electrode layer;
stripping the photoresist layer and the protective layer on the upper surface of the photoresist layer by using stripping liquid;
and removing the exposed part of the substrate and the protective layer on the inclined plane.
2. The method of manufacturing a display panel according to claim 1, wherein the step of forming the protective layer on the substrate includes the steps of: and forming the protective layer on the substrate and the exposed surfaces of the barrier layer and the electrode layer by a physical vapor deposition method.
3. The method of manufacturing a display panel according to claim 1, wherein the protective layer contains carbon.
4. The method of manufacturing a display panel according to claim 1, wherein the protective layer has a thickness of 10 to 500 angstroms.
5. The method of manufacturing a display panel according to claim 1, wherein the step of removing the protective layer comprises the steps of: and gasifying the protective layer by a plasma gas bombardment method, and removing the protective layer.
6. The method of manufacturing a display panel according to claim 5, wherein the gas used in the plasma gas bombardment method is oxygen or hydrogen.
7. The method of manufacturing a display panel according to claim 1, wherein the step of forming the photoresist layer on the electrode layer comprises the steps of: patterning the barrier layer and the electrode layer simultaneously by an etching process, and making the width of the side of the electrode layer away from the barrier layer smaller than the width of the side of the barrier layer away from the electrode layer.
8. The method of manufacturing a display panel according to claim 7, wherein the patterning of the barrier layer and the electrode layer comprises the steps of: and (3) introducing oxygen to ash part of the photoresist layer and stripping the photoresist layer, so that the width of the photoresist layer is equal to the width of one side of the electrode layer away from the barrier layer.
9. The method of manufacturing a display panel according to claim 1, wherein the barrier layer comprises a metal oxide; the electrode layer contains metal; the photoresist layer includes an anti-corrosion agent therein.
10. A display device comprising the display panel produced by the method for producing a display panel according to any one of claims 1 to 9.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010669329.2A CN111834217B (en) | 2020-07-13 | 2020-07-13 | Display panel preparation method and display device |
| PCT/CN2020/106789 WO2022011757A1 (en) | 2020-07-13 | 2020-08-04 | Display panel manufacturing method and display device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010669329.2A CN111834217B (en) | 2020-07-13 | 2020-07-13 | Display panel preparation method and display device |
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| CN111834217A CN111834217A (en) | 2020-10-27 |
| CN111834217B true CN111834217B (en) | 2023-05-09 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106229294A (en) * | 2016-08-31 | 2016-12-14 | 深圳市华星光电技术有限公司 | A kind of manufacture method of TFT substrate |
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| US20050199585A1 (en) * | 2004-03-12 | 2005-09-15 | Applied Materials, Inc. | Method of depositing an amorphous carbon film for metal etch hardmask application |
| JPWO2016038664A1 (en) * | 2014-09-08 | 2017-04-27 | 三菱電機株式会社 | Semiconductor annealing equipment |
| CN104733541B (en) * | 2015-03-19 | 2017-12-08 | 合肥鑫晟光电科技有限公司 | Conductive structure and preparation method thereof, array base palte, display device |
| US10453925B2 (en) * | 2016-01-29 | 2019-10-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Epitaxial growth methods and structures thereof |
| US10224238B2 (en) * | 2016-04-12 | 2019-03-05 | Apple Inc. | Electrical components having metal traces with protected sidewalls |
| CN109148288A (en) * | 2018-08-16 | 2019-01-04 | 武汉华星光电半导体显示技术有限公司 | The method for making conducting wire |
| CN110993564A (en) * | 2019-12-23 | 2020-04-10 | 深圳市华星光电半导体显示技术有限公司 | Manufacturing method of array substrate, array substrate and display device |
| CN111403337A (en) * | 2020-03-31 | 2020-07-10 | 成都中电熊猫显示科技有限公司 | Array substrate, display panel and manufacturing method of array substrate |
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| CN106229294A (en) * | 2016-08-31 | 2016-12-14 | 深圳市华星光电技术有限公司 | A kind of manufacture method of TFT substrate |
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