CN111430296B - Laser processing method of through hole - Google Patents
Laser processing method of through hole Download PDFInfo
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- CN111430296B CN111430296B CN202010242646.6A CN202010242646A CN111430296B CN 111430296 B CN111430296 B CN 111430296B CN 202010242646 A CN202010242646 A CN 202010242646A CN 111430296 B CN111430296 B CN 111430296B
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- hole
- air gap
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
- H01L21/76894—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern using a laser, e.g. laser cutting, laser direct writing, laser repair
Abstract
The invention provides a laser processing method of a through hole, which comprises the steps of forming a material with a preset height, then carrying out laser repair on the position of an air gap to change the air gap into a concave hole with a larger opening and a shallower depth, and then carrying out secondary filling of the material to form a final conductive through hole. It can eliminate the air gap and ensure the same conductivity at each position of the through hole, preventing current from gathering or breaking.
Description
Technical Field
The invention relates to the field of semiconductor material processing and manufacturing, in particular to a laser processing method of a through hole.
Background
The conductive via is a structure that must be used in semiconductor processing, chip post-processing, and the like, and is generally formed by filling a conductive substance in a via hole. Referring specifically to fig. 8, an insulating layer 1 is provided on a top metal layer 2, the insulating layer 1 is usually made of inorganic materials such as silicon oxide and silicon nitride, in order to ensure a high density of conductive vias, vias 3 with a large aspect ratio are usually formed in the insulating layer 1, and then the vias 3 are filled with conductive materials 4 to form conductive vias, but due to deposition non-uniformity on the bottom surface and the sidewalls, an air gap 5 is provided in the middle of the conductive material 4, which is very disadvantageous for the conductivity and affects other structures when polishing or covering other materials.
Disclosure of Invention
Based on solving the above problems, the present invention provides a laser processing method of a through hole, which sequentially comprises the following steps:
(1) measuring and calculating the position of an air gap generated when the through hole is completely filled with a material according to the diameter and the depth of the preformed through hole;
(2) setting a preset height according to the position of the air gap;
(3) depositing a first material in the through hole, and detecting whether the first material reaches the preset height or not, wherein a first concave hole with a first opening and a first depth is formed in the first material;
(4) repairing the first material by using laser so as to enable the first concave hole to be trimmed into a second concave hole, wherein the second concave hole is provided with a second opening and a second depth;
(5) continuing to deposit the first material.
According to an embodiment of the invention, further comprising a step (6) of planarizing the first material.
According to an embodiment of the present invention, in step (1), the method further comprises forming the via hole in the insulating layer, wherein a bottom of the via hole exposes the top metal layer below the insulating layer.
According to an embodiment of the present invention, in step (1), the method for calculating the position where the air gap is generated specifically includes: forming a redundant via hole having said diameter and said depth in said insulating layer, continuously depositing said first material in said redundant via hole, and recording the speed of its deposition and the position of the air gap generated, including the air gap height and the air gap starting position.
According to an embodiment of the invention, in step (3), the first depth is one third to one half of the height of the air gap when the first material reaches the predetermined height.
According to an embodiment of the invention, an aperture of the first opening is smaller than an aperture of the second opening, and the first depth is larger than the second depth.
According to an embodiment of the present invention, in step (4), a spot diameter of the laser light is larger than an aperture of the first opening but smaller than a diameter of the through hole.
According to an embodiment of the invention, the aspect ratio (depth to diameter ratio) of the through-hole is greater than or equal to 5.
The laser processing method of the through hole firstly forms a material with a preset height, then carries out laser repair on the position of the air gap so as to change the air gap into a concave hole with a larger opening and a shallower depth, and then carries out secondary filling of the material to form the final conductive through hole. It can eliminate the air gap and ensure the same conductivity at each position of the through hole, preventing current from gathering or breaking.
Drawings
FIG. 1 is a flow chart of a method of laser machining a via hole of the present invention;
FIGS. 2-7 are schematic illustrations of a laser machining method of a via hole of the present invention;
fig. 8 is a cross-sectional view of a prior art via.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present disclosure more apparent, the technical solutions of the embodiments of the present disclosure will be described clearly and completely with reference to the drawings of the embodiments of the present disclosure. It is to be understood that the described embodiments are only a few embodiments of the present disclosure, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the disclosure without any inventive step, are within the scope of protection of the disclosure.
Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
A method of laser processing a through hole according to the disclosed embodiment of the present invention will be described in detail below with reference to the accompanying drawings.
Referring to fig. 1, fig. 1 is a flowchart of a laser processing method of a via hole according to the present invention. The laser processing method of the through hole comprises the following steps:
(1) measuring and calculating the position of the air gap according to the diameters and the depths of different through holes;
(2) setting a preset height according to the position of the air gap;
(3) detecting whether the deposition material reaches a predetermined height;
(4) laser repairing;
(5) the deposition of material continues.
The above laser processing method is specifically described with reference to fig. 2 to 7.
First, in step (1), different through holes may need to be formed in different subsequent processes, or different through holes may need to be provided for forming different devices, and thus, the positions of air gaps generated in different through holes need to be determined. See, for example, fig. 2, which entails forming a via 13 (i.e., a preformed via) in the insulating layer 11 over the top metal layer 12.
Referring to FIG. 3, assuming that a preformed through hole 13 with a diameter R and a depth H is required, wherein the longitudinal width ratio H/R ≧ 5 of the through hole 13, a redundant through hole (not shown) with the diameter R and the depth H can be formed in the other non-electrical connection region (not shown) of the insulating layer 11, and then a metal material is continuously deposited (e.g., electroplated or electrolessly deposited) in the redundant through hole, and the speed of its deposition and the position where an air gap is generated are recorded. The position of the air gap includes the air gap starting position and the air gap height (i.e., the height difference between the air gap starting positions), which should be specified so as to set a predetermined height H1 (see fig. 4) referred to hereinafter as the first deposition.
The detection of the position of the air gap can be achieved by ultrasonic probing, the starting position of the air gap should be at a distance from the top metal layer 12, and the air gap is substantially ellipsoidal in shape due to the deposition rate of its via bottom and side walls.
Next, step (2) is performed, as shown in fig. 4, a first deposition of the metal material 14 is performed on the through hole 13 by electroplating or electroless plating, and the first deposition is performed on the through hole 13, the first deposition should make the metal material 14 reach a predetermined height H1, and the predetermined height H1 should be smaller than the through hole depth H. Now a part of the air gap described above, i.e. the first recess hole 15 in fig. 4, has been formed in the metal material 15, which first recess hole 15 has a first opening diameter r1 and a first depth d1, said first depth d1 being one third to one half of the height of said air gap in order to guarantee the subsequent filling effect and in order to guarantee the filling efficiency, since now the first recess hole 15 is easy to open and with a reduced depth.
Referring to fig. 5, the metal material 14 is laser repaired by a he-ne laser, a CO2 laser, etc., the spot center of the laser L is opposite to the center of the first concave hole 15, and the spot of the laser L has a diameter larger than the first opening diameter R1, but the spot diameter of the laser L should be smaller than the diameter R of the through hole 13. The energy of the laser L should be capable of melting the metal material so as to cause the upper surface portion of the metal material to flow, thereby making the first recess hole 15 become a second recess hole 16, the second recess hole 16 having a second opening diameter r2 and a second depth d2, wherein the first opening diameter r1 is smaller than the second opening diameter r2, and the first depth d1 is larger than the second depth d2, thereby facilitating the second deposition.
Then, referring to fig. 6, the through hole 13 is subjected to a second deposition of the metal material to completely fill the through hole 13, and in the present invention, the metal material may protrude from the upper surface of the insulating layer 11.
And finally, carrying out mechanical polishing to realize the planarization process of the conductive through hole.
In summary, a laser processing method for a through hole sequentially includes the following steps:
(1) measuring and calculating the position of an air gap generated when the through hole is completely filled with a material according to the diameter and the depth of the preformed through hole;
(2) setting a preset height according to the position of the air gap;
(3) depositing a first material in the through hole, and detecting whether the first material reaches the preset height or not, wherein a first concave hole with a first opening and a first depth is formed in the first material;
(4) repairing the first material by using laser so as to enable the first concave hole to be trimmed into a second concave hole, wherein the second concave hole is provided with a second opening and a second depth;
(5) continuing to deposit the first material;
(6) planarizing the first material.
Wherein, in the step (1), the method further comprises forming the via hole in the insulating layer, wherein the bottom of the via hole exposes the top metal layer below the insulating layer.
In the step (1), the method for measuring and calculating the position generated by the air gap specifically comprises the following steps: forming a redundant via hole having said diameter and said depth in said insulating layer, continuously depositing said first material in said redundant via hole, and recording the speed of its deposition and the position of the air gap generated, including the air gap height and the air gap starting position.
Wherein, in step (3), when the first material reaches the predetermined height, the first depth is one third to one half of the air gap height.
Wherein an aperture of the first opening is smaller than an aperture of the second opening, and the first depth is greater than the second depth.
Wherein, in the step (4), a spot diameter of the laser is larger than the aperture of the first opening but smaller than the diameter of the through hole.
Wherein, the aspect ratio (the ratio of the depth to the diameter) of the through hole is more than or equal to 5.
The laser processing method of the through hole firstly forms a material with a preset height, then carries out laser repair on the position of the air gap so as to change the air gap into a concave hole with a larger opening and a shallower depth, and then carries out secondary filling of the material to form the final conductive through hole. It can eliminate the air gap and ensure the same conductivity at each position of the through hole, preventing current from gathering or breaking.
The expressions "exemplary embodiment," "example," and the like, as used herein, do not refer to the same embodiment, but are provided to emphasize different particular features. However, the above examples and exemplary embodiments do not preclude their implementation in combination with features of other examples. For example, even in a case where a description of a specific example is not provided in another example, unless otherwise stated or contrary to the description in the other example, the description may be understood as an explanation relating to the other example.
The terminology used in the present invention is for the purpose of illustrating examples only and is not intended to be limiting of the invention. Unless the context clearly dictates otherwise, singular expressions include plural expressions.
While example embodiments have been shown and described, it will be apparent to those skilled in the art that modifications and changes may be made without departing from the scope of the invention as defined by the claims.
Claims (5)
1. A laser processing method of a through hole sequentially comprises the following steps:
(1) calculating the position of an air gap generated when a material is completely filled in the through hole according to the diameter and the depth of the through hole preformed in the insulating layer; the aspect ratio (the ratio of the depth to the diameter) of the through hole is more than or equal to 5, and the air gap is completely positioned in the through hole; the method for measuring and calculating the position generated by the air gap specifically comprises the following steps: forming a redundant via hole having said diameter and said depth in said insulating layer, continuously depositing a first material in said redundant via hole, and recording the speed of its deposition and the location of the air gap created, including the air gap height and the air gap starting location;
(2) setting a preset height according to the position of the air gap;
(3) depositing a first material in the through hole, and detecting whether the first material reaches the preset height or not, wherein a first concave hole with a first opening and a first depth is formed in the first material;
(4) repairing the first material by using laser so as to enable the first concave hole to be trimmed into a second concave hole, wherein the second concave hole is provided with a second opening and a second depth; the calibers of the first opening and the second opening are smaller than the diameter of the through hole; the spot diameter of the laser is larger than the aperture of the first opening but smaller than the diameter of the through hole;
(5) continuing to deposit the first material.
2. The laser processing method of a via hole according to claim 1, further comprising a step (6) of planarizing the first material.
3. The method of laser processing a via according to claim 1, further comprising forming the via in an insulating layer in step (1), wherein a bottom of the via exposes a top metal layer below the insulating layer.
4. The laser processing method of a via hole according to claim 1, wherein in step (3), when the first material reaches the predetermined height, the first depth is one third to one half of the air gap height.
5. The laser processing method of a via according to claim 4, wherein an aperture of the first opening is smaller than an aperture of the second opening, and the first depth is larger than the second depth.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103515304A (en) * | 2012-06-19 | 2014-01-15 | 台湾积体电路制造股份有限公司 | Etch damage and esl free dual damascene metal interconnect |
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| JPH05102317A (en) * | 1991-10-09 | 1993-04-23 | Toshiba Corp | Manufacture of semiconductor device |
| DE10234165B4 (en) * | 2002-07-26 | 2008-01-03 | Advanced Micro Devices, Inc., Sunnyvale | A method of filling a trench formed in a substrate with an insulating material |
| US7033929B1 (en) * | 2002-12-23 | 2006-04-25 | Lsi Logic Corporation | Dual damascene interconnect structure with improved electro migration lifetimes |
| KR100612906B1 (en) * | 2004-08-02 | 2006-08-14 | 삼성전자주식회사 | Methods of forming phase change memory devices |
| CN107993953A (en) * | 2017-11-23 | 2018-05-04 | 长江存储科技有限责任公司 | A kind of method for being accurately positioned cavity position in electro-migration testing |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103515304A (en) * | 2012-06-19 | 2014-01-15 | 台湾积体电路制造股份有限公司 | Etch damage and esl free dual damascene metal interconnect |
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