CN111421063B - Pot-shaped target material processing and forming method - Google Patents
Pot-shaped target material processing and forming method Download PDFInfo
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- CN111421063B CN111421063B CN202010280001.1A CN202010280001A CN111421063B CN 111421063 B CN111421063 B CN 111421063B CN 202010280001 A CN202010280001 A CN 202010280001A CN 111421063 B CN111421063 B CN 111421063B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D—WORKING OR PROCESSING OF SHEET METAL OR METAL TUBES, RODS OR PROFILES WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D37/00—Tools as parts of machines covered by this subclass
- B21D37/16—Heating or cooling
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D—WORKING OR PROCESSING OF SHEET METAL OR METAL TUBES, RODS OR PROFILES WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D22/00—Shaping without cutting, by stamping, spinning, or deep-drawing
- B21D22/02—Stamping using rigid devices or tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D—WORKING OR PROCESSING OF SHEET METAL OR METAL TUBES, RODS OR PROFILES WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D37/00—Tools as parts of machines covered by this subclass
- B21D37/10—Die sets; Pillar guides
Abstract
The invention relates to a method for processing and forming a pot-shaped target, which comprises the following steps: heating a plate blank to be stamped, then assembling the plate blank with a lower die, mounting an upper die to obtain a workpiece to be stamped, and stamping the workpiece to be stamped to obtain a pot-shaped target; wherein the pressing rate in the punching is 20-50 mm/s. The qualified pot-shaped target can be prepared, so that the pot-shaped target prepared by the method has better uniformity of a sputtered film, the sputtering life of the pot-shaped target is longer relative to a planar target, the machining allowance of the target after preparation and molding can be effectively reduced, and the ion yield of the pot-shaped target prepared by sputtering is higher.
Description
Technical Field
The invention relates to the field of target processing, in particular to a pot-shaped target processing and forming method.
Background
At present, the shapes of target materials for semiconductor chips are different due to different machine tables. Therefore, there are various processing methods, and CN100497260A discloses a hot-pressing sintering molding method for large-size ceramic sputtering target, which comprises the following steps: weighing powder raw materials for manufacturing the target material; selecting a die with the same diameter according to the diameter requirement for manufacturing the target material; putting the die into a hot-pressing furnace body which is used for pressurizing at the upper part and fixing the reference surface of the lower pressure head; loading by adopting a vibrating funnel method, measuring and ensuring that the powder accumulation heights of all parts in the die are the same; hot pressing and adding protective atmosphere, starting a press, starting pressurization, enabling an upper pressure head to move downwards, and keeping the temperature and the pressure for 20-60 min under the environment of 650-2100 ℃ and 15-40 MPa until the relative density of the target material reaches a design value; and maintaining the pressure by adopting an additional pressure maintaining process to further prepare a sintered blank of the sputtering target material. CN102703862A discloses a method for forming a copper-gallium/copper-indium-gallium tubular cathode target, which comprises the steps of sequentially loading raw materials of copper Cu, indium-In and gallium-Ga into a vacuum induction melting furnace according to a certain proportion, heating to a certain temperature under a certain vacuum condition for melting and refining, carrying out vacuum induction high vacuum melting and electromagnetic stirring, and then adopting a specially designed bottom pouring injection mold system for rapid cooling and solidification forming. The process parameters are easy to control, the product yield is high, the raw material utilization rate is high, and most importantly, the high-quality copper gallium/copper indium gallium alloy tubular cathode target material which is high in purity, low in gas content, uniform in component, fine in crystal grain and high in density can be obtained, so that the copper indium gallium selenide tubular cathode target material has a practical production application prospect in the aspect of preparing the copper indium gallium selenide solar thin film battery. CN109624025A discloses a slip casting mould and a method of oxide target, and the mould comprises an antirust magnetic force sucking disc and a plurality of antirust mould steel plates, and when in use, the antirust mould steel plates are spliced into a structure with a square closed cavity and are adsorbed on the antirust magnetic force sucking disc through magnetic force to form a slip casting cavity. The forming method is that oxide slurry to be formed is injected into a cavity, a plastic film or cloth with the same size is prepared and is adhered with water-absorbing resin, the plastic film or cloth is covered on the surface of the slurry in the cavity, water in the slurry can be absorbed by the super-absorbent resin, the plastic film adhered with the water-absorbing resin can be replaced in the midway, after the slurry is dehydrated and formed, the magnetic sucker is demagnetized, and a die plate is removed, so that a formed green body is obtained. The upward dehydration mode is adopted, and the dehydration medium can be replaced in the forming process, so that the phenomenon that the dehydration medium is blocked and cannot be dehydrated in the later period is avoided; and the size of the die is convenient to adjust, and the current situation that the size of a target product is variable can be met.
However, there is an HCM machine using Cu and tantalum targets, which has a shape similar to a deep pot, and has a long sputtering life and a high target utilization rate. However, the target material is pot-shaped, and the target blank is thick and is not easy to machine and form.
Disclosure of Invention
In view of the problems in the prior art, the invention aims to provide a processing and forming method of a pot-shaped target, the pot-shaped target prepared by the method has better uniformity of a sputtered film, and the sputtering life of the pot-shaped target is longer compared with that of a plane target.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a method for processing and forming a pot-shaped target, which comprises the following steps: heating a plate blank to be stamped, then assembling the plate blank with a lower die, mounting an upper die to obtain a workpiece to be stamped, and stamping the workpiece to be stamped to obtain a pot-shaped target;
wherein the pressing rate in the punching is 20-50 mm/s.
In the present invention, the pressing rate in the pressing is 20 to 50mm/s, and may be, for example, 20mm/s, 25mm/s, 30mm/s, 35mm/s, 40mm/s, 45mm/s or 50mm/s, etc., but is not limited to the values listed, and other values not listed in the range are also applicable.
According to the invention, through reasonable design (heating temperature regulation and control and pressurization rate regulation and control) of the processing and forming process of the pot-shaped target, the qualified pot-shaped target can be prepared, so that the pot-shaped target prepared by the method has better uniformity of a sputtered film, the sputtering life of the pot-shaped target is longer relative to a planar target, the processing allowance of the target after preparation and forming can be effectively reduced, and the ion yield of the pot-shaped target prepared by sputtering is higher.
As a preferable aspect of the present invention, the size of the punch in the upper die is the same as the inner size of the pot-shaped target.
Preferably, the height of the punch in the upper die is equal to the depth of the pot-shaped target.
Preferably, the maximum diameter of the punch in the upper die is equal to the maximum diameter of the pot-shaped target.
Preferably, the angle of the punch in the upper die is equal to the angle of the pot-shaped target.
As a preferable technical scheme of the invention, the vertical distance from the minimum position of the diameter of the lower die to the lowest point of the inner hole of the pot-shaped target material is the same as the vertical distance from the top of the transition section of the upper die to the bottom of the punch.
Preferably, the diameter of the minimum portion of the lower mold is 0.3 to 0.6mm larger than the maximum diameter of the pot-shaped target, and may be, for example, 0.3mm, 0.35mm, 0.4mm, 0.45mm, 0.5mm, 0.55mm, or 0.6mm, but is not limited to the above-mentioned values, and other values not listed in this range are also applicable.
The design is convenient for alignment before the upper die and the lower die are punched, and after the upper die and the lower die can be smoothly matched, a plate to be punched is placed into a groove of the lower die, so that the product punching deviation is avoided.
As a preferable technical scheme of the invention, the uppermost end of the lower die is provided with a round groove for placing the plate blank to be punched.
Preferably, the diameter of the circular groove is 0.1-0.3mm larger than the diameter of the blank to be punched, for example, 0.1mm, 0.11mm, 0.12mm, 0.13mm, 0.14mm, 0.15mm, 0.16mm, 0.17mm, 0.18mm, 0.19mm, 0.2mm, 0.21mm, 0.22mm, 0.23mm, 0.24mm, 0.25mm, 0.26mm, 0.27mm, 0.28mm, 0.29mm, 0.3mm, etc., but not limited to the enumerated values, and other unrecited values in this range are equally applicable.
As a preferable technical scheme of the invention, the feeding position of the lower die is a circular arc.
Preferably, the radius of the circular arc is 70-130mm, for example 70mm, 72mm, 74mm, 76mm, 78mm, 80mm, 82mm, 84mm, 86mm, 88mm, 90mm, 92mm, 94mm, 96mm, 98mm, 100mm, 102mm, 104mm, 106mm, 108mm, 110mm, 112mm, 114mm, 116mm, 118mm, 120mm, 122mm, 124mm, 126mm, 128mm or 130mm, etc., but is not limited to the values listed, and other values not listed in this range are equally applicable.
This design is for easy feeding of the blank during stamping.
In a preferred embodiment of the present invention, the diameter of the bottom opening of the lower mold is 30 to 60mm larger than the maximum diameter of the product, and may be, for example, 30mm, 31mm, 32mm, 33mm, 34mm, 35mm, 36mm, 37mm, 38mm, 39mm, 41mm, 42mm, 43mm, 44mm, 45mm, 46mm, 47mm, 48mm, 49mm, 50mm, 51mm, 52mm, 53mm, 54mm, 55mm, 56mm, 57mm, 58mm, 59mm, or 60mm, but is not limited to the above-mentioned values, and other values not listed in the range are also applicable.
The design is convenient for the product to be taken out after being stamped.
As a preferable technical scheme of the invention, the upper die and the lower die are corrected before the plate blank to be punched is placed into the lower die.
In the invention, the correction finger aligns the center lines of the upper die and the lower die and carries out no-load stamping.
In a preferred embodiment of the present invention, the heating temperature is 300 ℃ to 700 ℃, and may be, for example, 300 ℃, 320 ℃, 340 ℃, 360 ℃, 380 ℃, 400 ℃, 420 ℃, 440 ℃, 460 ℃, 480 ℃, 500 ℃, 520 ℃, 540 ℃, 560 ℃, 580 ℃, 600 ℃, 620 ℃, 640 ℃, 660 ℃, 680 ℃ or 700 ℃, but is not limited to the recited values, and other values not recited in the range are also applicable.
In a preferred embodiment of the present invention, the pressing pressure is 15 to 60MPa, and may be, for example, 15MPa, 20MPa, 25MPa, 30MPa, 35MPa, 40MPa, 45MPa, 50MPa, 55MPa or 60MPa, but is not limited to the above-mentioned values, and other values not listed in the above range are also applicable.
As a preferred technical solution of the present invention, the method comprises: heating a plate blank to be stamped, then assembling the plate blank with a lower die, mounting an upper die to obtain a workpiece to be stamped, and stamping the workpiece to be stamped to obtain a pot-shaped target;
wherein the rate of pressing in the stamping is 20-50 mm/s; the size of the punch in the upper die is the same as the inner size of the pot-shaped target; the height of the punch in the upper die is equal to the depth of the pot-shaped target; the maximum diameter of the punch in the upper die is equal to the maximum diameter of the pot-shaped target; the angle of the punch in the upper die is equal to that of the pot-shaped target; the vertical distance from the minimum position of the diameter of the lower die to the lowest point of the inner hole of the pot-shaped target is the same as the vertical distance from the top of the transition section of the upper die to the bottom of the punch; the diameter of the minimum position of the lower die is 0.3-0.6mm larger than the maximum diameter of the pot-shaped target; the uppermost end of the lower die is provided with a round groove for placing a plate blank to be punched; the diameter of the circular groove is 0.1-0.3mm larger than that of the plate blank to be punched; the diameter of the opening at the bottom of the lower die is 30-60mm larger than the maximum diameter of the product; correcting the upper die and the lower die before the plate blank to be punched is placed into the lower die; the heating temperature is 300-700 ℃; the pressure of the stamping is 15-60 MPa.
Compared with the prior art, the invention at least has the following beneficial effects:
the qualified pot-shaped target can be prepared, so that the pot-shaped target prepared by the method has better uniformity of a sputtered film, the sputtering life of the pot-shaped target is longer relative to a planar target, the machining allowance of the target after preparation and molding can be effectively reduced, and the ion yield of the pot-shaped target prepared by sputtering is higher.
Drawings
Fig. 1 is a schematic view of a press mold in embodiment 1 of the present invention.
In the figure: 1-upper die, 2-lower die, 3-product, 1-1 punching end, 1-2 transition section, 1-3 punch, A-depth of pot-shaped target, B-vertical distance from the minimum position of the diameter of the lower die to the lowest point of the inner hole of the pot-shaped target, D-maximum diameter of the pot-shaped target, diameter of E-circular groove, angle of Y-pot-shaped target, a-height of the punch, B-vertical distance from the top of the transition section of the upper die to the bottom of the punch, D-maximum diameter of the punch and Y-angle of the punch.
The present invention is described in further detail below. The following examples are merely illustrative of the present invention and do not represent or limit the scope of the claims, which are defined by the claims.
Detailed Description
To better illustrate the invention and to facilitate the understanding of the technical solutions thereof, typical but non-limiting examples of the invention are as follows:
example 1
The embodiment provides a method for processing and forming a pot-shaped target, wherein a stamping die is shown in fig. 1, and the method comprises the following steps: heating a plate blank to be stamped, then assembling the plate blank with a lower die, mounting an upper die to obtain a workpiece to be stamped, and stamping the workpiece to be stamped to obtain a pot-shaped target;
wherein the rate of pressing in the stamping is 20 mm/s; the size of the punch in the upper die is the same as the inner size of the pot-shaped target; the height a of the punch in the upper die is equal to the depth A of the pot-shaped target; the maximum diameter D of the punch in the upper die is equal to the maximum diameter D of the pot-shaped target; the angle Y of the punch in the upper die is equal to the angle Y of the pot-shaped target; the vertical distance B from the minimum position of the diameter of the lower die to the lowest point of the inner hole of the pot-shaped target is the same as the vertical distance B from the top of the transition section of the upper die to the bottom of the punch; the diameter of the minimum position of the lower die is 0.3mm larger than the maximum diameter of the pot-shaped target; the uppermost end of the lower die is provided with a round groove for placing a plate blank to be punched; the diameter E of the circular groove is 0.1mm larger than that of the plate blank to be punched; the diameter of the opening at the bottom of the lower die is 30mm larger than the maximum diameter of the product; correcting the upper die and the lower die before the plate blank to be punched is placed into the lower die; the heating temperature is 400 ℃; the pressure of the stamping is 20 MPa.
The prepared target has better uniformity of a pot-shaped target sputtering film, the pot-shaped target has longer sputtering service life relative to a plane target, the machining allowance of the target after preparation and forming can be effectively reduced, and the ion yield of the pot-shaped target obtained by preparation is higher.
Example 2
The embodiment provides a method for processing and forming a pot-shaped target, which comprises the following steps: heating a plate blank to be stamped, then assembling the plate blank with a lower die, mounting an upper die to obtain a workpiece to be stamped, and stamping the workpiece to be stamped to obtain a pot-shaped target;
wherein the rate of pressing in the stamping is 45 mm/s; the size of the punch in the upper die is the same as the inner size of the pot-shaped target; the height of the punch in the upper die is equal to the depth of the pot-shaped target; the maximum diameter of the punch in the upper die is equal to the maximum diameter of the pot-shaped target; the angle of the punch in the upper die is equal to that of the pot-shaped target; the vertical distance from the minimum position of the diameter of the lower die to the lowest point of the inner hole of the pot-shaped target is the same as the vertical distance from the top of the transition section of the upper die to the bottom of the punch; the diameter of the minimum part of the lower die is 0.45mm larger than the maximum diameter of the pot-shaped target; the uppermost end of the lower die is provided with a round groove for placing a plate blank to be punched; the diameter of the circular groove is 0.15mm larger than that of the plate blank to be punched; the diameter of the opening at the bottom of the lower die is 45mm larger than the maximum diameter of the product; correcting the upper die and the lower die before the plate blank to be punched is placed into the lower die; the heating temperature is 500 ℃; the pressure of the stamping is 50 MPa.
The prepared target has better uniformity of a pot-shaped target sputtering film, the pot-shaped target has longer sputtering service life relative to a plane target, the machining allowance of the target after preparation and forming can be effectively reduced, and the ion yield of the pot-shaped target obtained by preparation is higher.
Example 3
The embodiment provides a method for processing and forming a pot-shaped target, which comprises the following steps: heating a plate blank to be stamped, then assembling the plate blank with a lower die, mounting an upper die to obtain a workpiece to be stamped, and stamping the workpiece to be stamped to obtain a pot-shaped target;
wherein the rate of pressing in the stamping is 50 mm/s; the size of the punch in the upper die is the same as the inner size of the pot-shaped target; the height of the punch in the upper die is equal to the depth of the pot-shaped target; the maximum diameter of the punch in the upper die is equal to the maximum diameter of the pot-shaped target; the angle of the punch in the upper die is equal to that of the pot-shaped target; the vertical distance from the minimum position of the diameter of the lower die to the lowest point of the inner hole of the pot-shaped target is the same as the vertical distance from the top of the transition section of the upper die to the bottom of the punch; the diameter of the minimum position of the lower die is 0.6mm larger than the maximum diameter of the pot-shaped target; the uppermost end of the lower die is provided with a round groove for placing a plate blank to be punched; the diameter of the circular groove is 0.3mm larger than that of the plate blank to be punched; the diameter of the opening at the bottom of the lower die is 55mm larger than the maximum diameter of the product; correcting the upper die and the lower die before the plate blank to be punched is placed into the lower die; the heating temperature is 700 ℃; the pressure of the stamping is 60 MPa.
The prepared target has better uniformity of a pot-shaped target sputtering film, the pot-shaped target has longer sputtering service life relative to a plane target, the machining allowance of the target after preparation and forming can be effectively reduced, and the ion yield of the pot-shaped target obtained by preparation is higher.
Comparative example 1
The only difference from example 1 is that the heating temperature was 900 ℃, the forming according to the die size was not easily performed when punching was performed under the condition, and the obtained target material was liable to defect.
Comparative example 2
The difference from the example 1 is only that the heating temperature is 100 ℃, the pressing difficulty is high under the condition, and the phenomenon of punching failure or intermediate punching after increasing the pressure can occur.
Comparative example 3
The difference from example 1 is only that the pressing rate is 70mm/s, and the pressing rate is too fast, which results in too fast forming rate and easy occurrence of punching or folding in a partial area.
According to the results of the embodiment and the comparative example, the qualified pan-shaped target can be prepared by the method provided by the invention, so that the uniformity of the pan-shaped target sputtering film prepared by the method is better, the sputtering life of the pan-shaped target is longer relative to a planar target, the machining allowance after the target is prepared and molded can be effectively reduced, and the ion yield of the pan-shaped target prepared by the method is higher.
The applicant declares that the present invention illustrates the detailed structural features of the present invention through the above embodiments, but the present invention is not limited to the above detailed structural features, that is, it does not mean that the present invention must be implemented depending on the above detailed structural features. It should be understood by those skilled in the art that any modifications of the present invention, equivalent substitutions of selected components of the present invention, additions of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.
The preferred embodiments of the present invention have been described in detail, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and the invention is not described in any way for the possible combinations in order to avoid unnecessary repetition.
In addition, any combination of the various embodiments of the present invention is also possible, and the same should be considered as the disclosure of the present invention as long as it does not depart from the spirit of the present invention.
Claims (14)
1. A pot-shaped target material processing and forming method is characterized by comprising the following steps: heating a plate blank to be stamped, then assembling the plate blank with a lower die, mounting an upper die to obtain a workpiece to be stamped, and stamping the workpiece to be stamped to obtain a pot-shaped target; the pot-shaped target is a copper pot-shaped target or a tantalum pot-shaped target;
wherein the rate of pressing in the stamping is 20-50 mm/s; the heating temperature is 300-700 ℃; the pressure of the stamping is 15-60 MPa.
2. The method of claim 1, wherein the size of the punch in the upper die is the same as the inner size of the pan-shaped target.
3. The method of claim 1, wherein the height of the punch in the upper die is equal to the depth of the pot-shaped target.
4. The method of claim 1, wherein the maximum diameter of the punch in the upper die is equal to the maximum diameter of the pot-shaped target.
5. The method of claim 1, wherein the angle of the punch in the upper die is equal to the angle of the pot-shaped target.
6. The method of claim 2, wherein the minimum of the diameter of the lower die is the same vertical distance from the lowest point of the inner hole of the target pan as the vertical distance from the top of the transition section of the upper die to the bottom of the punch.
7. The method of claim 1, wherein the diameter of the lower mold at the smallest is 0.3-0.6mm larger than the largest diameter of the pot-shaped target.
8. The method of claim 1, wherein the lower die has a circular groove at the uppermost end thereof for receiving the blank to be punched.
9. The method according to claim 8, characterized in that the diameter of the circular groove is 0.1-0.3mm larger than the diameter of the blank to be punched.
10. The method of claim 8, wherein the feed of the lower mold is a circular arc.
11. The method of claim 10, wherein the radius of the arc is 70-130 mm.
12. The method of claim 1, wherein the diameter of the bottom opening of the lower mold is 30-60mm larger than the maximum diameter of the pot-shaped target.
13. The method according to claim 1, characterized in that the upper die and the lower die are calibrated before the slab to be punched is placed in the lower die.
14. The method of claim 1, wherein the method comprises: heating a plate blank to be stamped, then assembling the plate blank with a lower die, mounting an upper die to obtain a workpiece to be stamped, and stamping the workpiece to be stamped to obtain a pot-shaped target;
wherein the rate of pressing in the stamping is 20-50 mm/s; the size of the punch in the upper die is the same as the inner size of the pot-shaped target; the height of the punch in the upper die is equal to the depth of the pot-shaped target; the maximum diameter of the punch in the upper die is equal to the maximum diameter of the pot-shaped target; the angle of the punch in the upper die is equal to that of the pot-shaped target; the vertical distance from the minimum position of the diameter of the lower die to the lowest point of the inner hole of the pot-shaped target is the same as the vertical distance from the top of the transition section of the upper die to the bottom of the punch; the diameter of the minimum position of the lower die is 0.3-0.6mm larger than the maximum diameter of the pot-shaped target; the uppermost end of the lower die is provided with a round groove for placing a plate blank to be punched; the diameter of the circular groove is 0.1-0.3mm larger than that of the plate blank to be punched; the diameter of the opening at the bottom of the lower die is 30-60mm larger than the maximum diameter of the pot-shaped target; correcting the upper die and the lower die before the plate blank to be punched is placed into the lower die; the heating temperature is 300-700 ℃; the pressure of the stamping is 15-60 MPa.
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| CN112342509B (en) * | 2020-10-14 | 2023-04-07 | 宁波江丰电子材料股份有限公司 | Forming method of target material for HCM machine table |
| CN113083979B (en) * | 2021-03-26 | 2023-02-28 | 中国工程物理研究院上海激光等离子体研究所 | Preparation method of self-supporting thin film target component for strong laser loading physical experiment |
| CN113718211A (en) * | 2021-08-25 | 2021-11-30 | 宁波江丰电子材料股份有限公司 | Bowl-shaped target material for semiconductor and preparation method thereof |
| CN113913760A (en) * | 2021-09-30 | 2022-01-11 | 宁波江丰电子材料股份有限公司 | Pot-shaped target material and processing method thereof |
| CN114131380A (en) * | 2022-01-14 | 2022-03-04 | 宁波江丰电子材料股份有限公司 | Positioning clamp for special-shaped target and machining method thereof |
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| TW200801215A (en) * | 2006-05-01 | 2008-01-01 | Honeywell Int Inc | Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets |
| CN101701328A (en) * | 2009-11-10 | 2010-05-05 | 宁波江丰电子材料有限公司 | Plastic deforming method of sputtering target material |
| CN108202292A (en) * | 2016-12-20 | 2018-06-26 | 宁波江丰电子材料股份有限公司 | Aluminium target production method |
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