CN111405195B - Data conversion device and method of double-exposure CMOS image sensor - Google Patents
Data conversion device and method of double-exposure CMOS image sensor Download PDFInfo
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- CN111405195B CN111405195B CN202010209608.0A CN202010209608A CN111405195B CN 111405195 B CN111405195 B CN 111405195B CN 202010209608 A CN202010209608 A CN 202010209608A CN 111405195 B CN111405195 B CN 111405195B
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Abstract
The invention discloses a data conversion device and a data conversion method of a double-exposure CMOS image sensor, and belongs to the field of CMOS image sensors. The invention relates to a low kickback data conversion device and a conversion method of a double-exposure CMOS image sensor.A turning signal of an ADC (analog-to-digital converter) comparator is switched to be a rising edge in a double-exposure mode by switching the input of the ADC comparator between two modes; in the global mode, the positive end and the negative end are switched with signals, and the turning signal is still a rising edge; therefore, under two exposure modes, the slope signal and the pixel output signal are intersected to cause the comparator to overturn and generate a rising edge signal, and the reusability of the ADC counter is guaranteed.
Description
Technical Field
The invention belongs to the field of CMOS image sensors, and particularly relates to a data conversion device and a data conversion method of a double-exposure CMOS image sensor.
Background
The roller shutter exposure type CMOS image sensor has excellent noise characteristics, and can well meet the imaging requirements of low noise and high dynamic range in a space low-illumination application environment. However, in the application of low-orbit satellite-borne or airborne high-ground image division, the motion distortion phenomenon occurs when a moving object is imaged because the time when each row of pixels in an area array enters and exits the exposure state is different. The area array pixels in the global exposure type CMOS image sensor are simultaneously exposed, so that the global exposure type CMOS image sensor is suitable for shooting a motion scene.
Conventional CMOS image sensors are limited by the compatibility challenges of the readout circuitry, and typically employ a single exposure mode to suit particular requirements. Fig. 1 shows a conventional rolling-shutter exposure type CMOS image sensor architecture, which includes a pixel 100, an analog front end 200, a conversion comparator 400, and an ADC counter 600. S6 is a readout switch, which is turned on during the active period of the row, for outputting the photo and reset signals of the picture elements. In the reset phase S4, high, the FD point is reset; in the photoelectric signal transfer stage S5, high, the photoelectric signal is transferred to the FD point, and the data conversion device quantizes the FD point photoelectric signal. According to the pixel output amplitude characteristics, the traditional rolling curtain exposure type CMOS image sensor is based on a related double sampling technology, and a rising slope is used as a slope reference of a data conversion device. The traditional global exposure type CMOS image sensor architecture outputs signals in an opposite order compared with the rolling shutter exposure type. And in the global mode, after the pixel exposure is finished, the photoelectric signal is output firstly and then the reset signal is output. Therefore, in the double-exposure mode, the output signal of the analog front end 200 has a polarity opposite to the common-mode level Vcm, and the falling slope is adopted to adapt to the amplitude of the output signal of the analog front end 200 in the global exposure mode.
A single column uses a data conversion device to achieve a good tradeoff of fill factor and frame rate for a CMOS image sensor, the column width is determined by the pixel size, limited by the finite column width, the ADC comparator is typically implemented using an active current mirror loaded comparator, and all columns share a ramp generator. The input end of the ADC comparator is respectively a ramp signal and an output signal of the analog front end 200, the jump of a comparator overturning signal is coupled to the ramp signal through a gate-drain overlapping parasitic capacitor, and due to the fact that multiple columns of the comparator overturning signal share the ramp signal, subsequent conversion errors are caused, and therefore the image quality of the CMOS image sensor is reduced.
Disclosure of Invention
The invention aims to overcome the defect that the traditional CMOS image sensor is not compatible with a double-exposure mode, and provides a data conversion device of the double-exposure CMOS image sensor and a conversion method thereof.
In order to achieve the purpose, the invention adopts the following technical scheme to realize the purpose:
a conversion method of double-exposure CMOS image sensor data is compatible with a rolling shutter exposure mode and a global exposure mode, and specifically comprises the following steps:
when the roller shutter exposure mode is adopted, the analog front end successively collects a reset signal and a photoelectric signal, firstly outputs a common-mode signal Vcm and then outputs a photoelectric signal Vsig;
a Ramp generator generates two rising Ramp signals Ramp to respectively quantize and simulate the common-mode signal Vcm and the photoelectric signal Vsig;
the Ramp signal Ramp is input to the positive end of the conversion ADC comparator, an output signal of the analog front end is input to the negative end of the conversion ADC comparator, and the conversion ADC comparator outputs a rising edge overturning signal Vcomp;
the turnover signal Vcomp enters an ADC counter for counting;
when the system is in a global exposure mode, the analog front end successively collects a photoelectric signal and a reset signal, outputs a photoelectric signal Vsig and then outputs a common-mode signal Vcm;
the Ramp generator generates two falling Ramp signals Ramp to respectively quantize and simulate the photoelectric signal Vsig and the common-mode signal Vcm;
the output signal of the analog front end is input into the positive end of a conversion ADC comparator, the Ramp signal Ramp is input into the negative end of the conversion ADC comparator, and the conversion ADC comparator outputs a rising edge turning signal Vcomp';
and the turnover signal Vcomp' enters an ADC counter for counting.
Further, when the rolling shutter exposure mode is adopted, the overturning signal Vcomp is simultaneously input to the negative end of the calibration ADC comparator, and the Ramp signal Ramp is simultaneously input to the positive end of the calibration ADC comparator;
when the global exposure mode is adopted, the overturning signal Vcomp' is simultaneously input to the positive end of the calibration ADC comparator, and the Ramp signal Ramp is simultaneously input to the negative end of the calibration ADC comparator.
A data conversion device of a double-exposure CMOS image sensor comprises pixels, an analog front end, a ramp generator, a conversion ADC comparator and an ADC counter;
when the rolling shutter exposure mode is adopted, the positive end of the conversion ADC comparator is connected with the Ramp signal Ramp, and the negative end of the conversion ADC comparator is connected with the output signal of the analog front end;
when the global exposure mode is adopted, the positive direction of the conversion ADC comparator is connected with the output signal of the analog front end, and the negative direction of the conversion ADC comparator is connected with the Ramp signal Ramp.
Further, when the roller shutter exposure mode is adopted, the analog front end successively collects a reset signal and a photoelectric signal, firstly outputs a common-mode signal Vcm, and then outputs a photoelectric signal Vsig;
the Ramp generator generates two rising Ramp signals Ramp to respectively quantize and simulate the common-mode signal Vcm and the photoelectric signal Vsig;
a Ramp signal Ramp is input at the positive end of the conversion ADC comparator, an output signal of an analog front end is input at the negative end of the conversion ADC comparator (400), and the conversion ADC comparator outputs a rising edge overturning signal Vcomp;
the ADC counter receives and counts the turnover signal Vcomp;
when the system is in a global exposure mode, the analog front end successively collects a photoelectric signal and a reset signal, outputs a photoelectric signal Vsig and then outputs a common-mode signal Vcm;
the Ramp generator generates two falling Ramp signals Ramp to respectively quantize and simulate the photoelectric signal Vsig and the common-mode signal Vcm;
the positive end of the conversion ADC comparator inputs an output signal of the analog front end, the negative end of the conversion ADC comparator inputs a Ramp signal Ramp, and the conversion ADC comparator outputs a turning signal Vcomp' of a rising edge;
and the ADC counter receives the turnover signal Vcomp' and counts.
Further, the method also comprises the step of calibrating the ADC comparator;
when the rolling shutter exposure mode is adopted, the negative end of the calibration ADC comparator is connected with a turnover signal Vcomp, and the positive end of the calibration ADC comparator is connected with the Ramp signal Ramp;
when the calibration ADC comparator is in the global exposure mode, the positive end of the calibration ADC comparator is connected with the flip signal Vcomp', and the negative end of the calibration ADC comparator is connected with the Ramp signal Ramp.
Compared with the prior art, the invention has the following beneficial effects:
the invention relates to a low kickback data conversion device and a conversion method of a double-exposure CMOS image sensor.A turning signal of an ADC (analog-to-digital converter) comparator is switched to be a rising edge in a double-exposure mode by switching the input of the ADC comparator between two modes; in the global mode, the positive end and the negative end are switched with signals, and the turning signal is still a rising edge; therefore, under two exposure modes, the slope signal and the pixel output signal are intersected to cause the comparator to overturn and generate a rising edge signal, and the reusability of the ADC counter is guaranteed. Is fed back to the input 400 of the calibration ADC comparator
Furthermore, a slope kickback compensation and elimination technology is adopted, interference caused by a jump signal generated by the output of the conversion ADC comparator can be coupled into a slope signal, the output signal of the conversion ADC comparator is input into the calibration ADC comparator, the calibration ADC comparator can generate opposite signal interference to be fed back into the slope signal, a falling edge overturning signal of the calibration ADC comparator causes downward disturbance of the slope signal, a rising edge overturning signal of the conversion ADC comparator causes upward disturbance of the slope signal, and mutual compensation and elimination of bidirectional disturbance are realized, so that the conversion precision of data is improved.
Drawings
FIG. 1 is a conventional rolling shutter exposure CMOS image sensor architecture;
FIG. 2 is a block diagram of a dual exposure CMOS image sensor data conversion device according to the present invention;
FIG. 3 is a schematic diagram of a data conversion apparatus according to the present invention;
fig. 4 is a schematic diagram of a double-exposure data conversion apparatus, wherein fig. 4(a) is a rolling mode, and fig. 4(b) is a global mode;
fig. 5 is a circuit diagram of slope kickback error compensation and elimination, wherein fig. 5 shows (a) a rolling mode and fig. 5(b) a global mode.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in sequences other than those illustrated or described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The invention is described in further detail below with reference to the accompanying drawings:
referring to fig. 3, fig. 3 is a schematic diagram of the data conversion apparatus, the CMOS image sensor is divided into a global exposure type and a rolling shutter exposure type according to an exposure mode, and the switch S1 is closed in the global mode and the switch S2 is closed in the rolling shutter mode. The photosensitive area array photodiodes of the global exposure type CMOS image sensor are exposed simultaneously, so that the global exposure type CMOS image sensor has good moving object detection performance; the rolling shutter exposure type CMOS image sensor has a low noise characteristic of photographing a stationary object. In order to be compatible with the advantages of global and rolling shutter double exposure modes and meet different application requirements, a double exposure mode CMOS image sensor is produced. The inclusion of two exposure modes in a single chip places new demands on the data conversion device of the CMOS image sensor. According to the working characteristics of different exposure modes of the CMOS image sensor: the rolling shutter exposure firstly collects a reset signal and then collects a photoelectric signal, and the signal output from the analog front end to the data conversion device is characterized in that a low level is output firstly and then a high level is output by combining a related double sampling technology; the global exposure firstly collects photoelectric signals and then collects reset signals, and the signal output from the analog front end to the data conversion device is characterized in that high level is output firstly and then low level is output by combining the related double sampling technology. The data conversion device adopts a double-slope mode to process double-exposure output signals, adopts a slope kickback compensation elimination technology to improve the data conversion precision, adopts a low-power-consumption configuration switch to meet different application requirements, and effectively improves the performance of the double-exposure CMOS image sensor.
The working principle of the invention is as follows: the low kickback data conversion device of the double-exposure CMOS image sensor improves the accuracy of slope signals by using a slope kickback compensation elimination technology. Referring to fig. 3, fig. 3 is a schematic diagram of a data conversion apparatus, in which an ADC counter 600 starts or stops counting with a single clock edge as a trigger signal of the ADC counter. In order to be compatible with the global rolling shutter double-exposure mode, the traditional ADC counter framework is used, and the comparator overturning signals are all rising edges in the double-exposure mode by switching the input mode of the comparator. In the rolling mode, the switch S2 is turned on, the positive end of the ADC comparator 400 is connected to the ramp signal, the negative end of the ADC comparator is connected to the output signal of the front end 200, and the inverted signal is a rising edge; conversely, in global mode, switch S1 is turned on, and the switching ADC comparator 400 switches between positive and negative input signals, with its toggle signal still being a rising edge. By adopting a slope kickback compensation and elimination technology and utilizing a negative feedback working principle, the output Vcomp or Vcomp' of the conversion ADC comparator 400 is coupled to kickback noise in a slope through a gate-drain parasitic capacitor in a rolling or global mode, and the bidirectional kickback noise is compensated and eliminated, so that the accuracy of a slope signal is realized. All columns share a ramp generating unit, and the ramp precision directly influences the precision of the whole data conversion device. The slope kickback compensation elimination of the invention effectively improves the performance of the CMOS image sensor.
Referring to fig. 2, fig. 2 is a diagram of a data conversion device of a double-exposure CMOS image sensor according to the present invention, and the present invention employs a bidirectional ramp data conversion device to adapt to double exposure, which is suitable for both a full-flow architecture and a linear architecture. The global flow architecture is characterized in that photoelectric conversion of an optical signal and sampling and amplification of the analog front end 200 are completed in the nth period, and quantization of an output value of the analog front end 200 is completed in the (n +1) th period; the linear architecture completes photoelectric conversion, analog front end sampling amplification and quantitative output of an optical signal in the same period, and has the characteristic of low transmission delay. According to the working characteristics of the analog front end 200, the analog front end 200 outputs the common mode level Vcm and then outputs the inverse value of the variation of the forward input end thereof. In the rolling mode, the pixel 100 outputs a reset signal and then outputs an optoelectronic signal, the variation of the input signal of the analog front end 200 is negative variation, so the output is positive variation, and the output value is higher than the Vcm value; on the contrary, in the global mode, the pixel outputs the photoelectric signal first and then outputs the reset signal, and the variation of the input signal of the analog front end 200 is a positive variation, so the output is a negative variation, and the output value is lower than the Vcm value. To ensure the swing, different Vcm are corresponded to in the two exposure modes, Vcm is at a lower level in the rolling shutter mode, Vcm is at a higher level in the global mode, the ramp generator 300 quantizes the output value of the analog front end 200, and a descending or ascending bidirectional ramp is adopted in the two exposure modes of the global or rolling shutter mode.
Referring to fig. 4(a) and 5(a), in the rolling mode, the gate terminals of the ramp signal input tube 10 and the analog signal input tube 11 respectively input the rising ramp signal and the analog front end output signal, and as the ramp signal increases, the conversion ADC comparator 400 outputs the rising edge flipping signal Vcomp. Since the Vcomp signal is a rising edge transition, the transition is coupled into the ramp signal through the gate-drain overlap capacitor Cgd1 and the conversion ADC comparator 400, and since all columns share a single ramp signal, this interference will cause a ramp bus error, affecting the CMOS image sensor conversion accuracy. Since the Vcomp signal is at a high level and a low level, the high level is higher than the Ramp signal, and the low level is lower than the Ramp signal, the Vcomp flips the rising edge signal, triggering the calibration ADC comparator 500 to generate the flip signal Vcomp _ cal, which is opposite to the Vcomp signal, and the reverse coupling of the Ramp kickback noise is realized through the gate-drain overlap capacitor Cgd and the calibration ADC comparator 500. Two kickback noises with opposite directions are coupled into the slope signal at the same time, so that the compensation offset of the slope kickback noises is realized, and the slope quality is improved. Referring to fig. 4(b) and 5(b), in the global mode, the ramp quality is improved according to the same mechanism.
The low kickback data conversion device of the double-exposure CMOS image sensor can adopt a low-power consumption configurable technology. The low-power-consumption mode can be configured in the field of low-precision and low-power-consumption requirements, the slope kickback calibration function is turned off, the ADC comparator 500 is turned off, and power consumption reduction is achieved. As shown in fig. 5, the NMOS transistor 18 is configured to enter a high-precision mode or a low-power mode under the control of the Cal signal. When the control signal Cal is in a high-precision mode, starting slope signal compensation elimination; when the control signal Cal is in the low power consumption mode, the calibration comparator 500 is turned off, and the low power consumption mode is entered. The configurable technology of the low power consumption mode meets the requirements of different application occasions, and the use flexibility of the device is improved.
The above-mentioned contents are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereby, and any modification made on the basis of the technical idea of the present invention falls within the protection scope of the claims of the present invention.
Claims (4)
1. A conversion method of double-exposure CMOS image sensor data is characterized by being compatible with a rolling shutter exposure mode and a global exposure mode, and specifically comprising the following steps:
when the roller shutter exposure mode is adopted, the analog front end (200) collects a reset signal and a photoelectric signal in sequence, outputs a common-mode signal Vcm firstly and outputs a photoelectric signal Vsig secondly;
a Ramp generator (300) generates a twice rising Ramp signal Ramp to respectively quantize and simulate the common mode signal Vcm and the photo signal Vsig;
the Ramp signal Ramp is input to the positive end of the conversion ADC comparator (400), an output signal of the analog front end (200) is input to the negative end of the conversion ADC comparator (400), and the conversion ADC comparator (400) outputs a rising edge overturning signal Vcomp;
the turnover signal Vcomp enters an ADC counter (600) for counting;
when the system is in a global exposure mode, the analog front end (200) collects a photoelectric signal and a reset signal in sequence, outputs a photoelectric signal Vsig and then outputs a common-mode signal Vcm;
a Ramp generator (300) generates a twice falling Ramp signal Ramp to quantize analog said photo signal Vsig and said common mode signal Vcm, respectively;
an output signal of the analog front end (200) is input into a positive end of a conversion ADC comparator (400), the Ramp signal Ramp is input into a negative end of the conversion ADC comparator, and the conversion ADC comparator (400) outputs a rising edge overturning signal Vcomp';
the flip signal Vcomp' enters the ADC counter (600) for counting.
2. The conversion method of double-exposure CMOS image sensor data according to claim 1, wherein when in a rolling shutter exposure mode, the roll-over signal Vcomp is simultaneously inputted to a negative terminal of the calibration ADC comparator (500), and the Ramp signal Ramp is simultaneously inputted to a positive terminal of the calibration ADC comparator (500);
when the global exposure mode is adopted, the overturning signal Vcomp' is simultaneously input to the positive end of the calibration ADC comparator (500), and the Ramp signal Ramp is simultaneously input to the negative end of the calibration ADC comparator (500).
3. A data conversion apparatus of a double-exposure CMOS image sensor includes a pixel (100), an analog front end (200), a ramp generator (300), a conversion ADC comparator (400), and an ADC counter (600);
when the rolling shutter exposure mode is adopted, the positive end of the conversion ADC comparator (400) is connected with the Ramp signal Ramp, and the negative end thereof is connected with the output signal of the analog front end (200);
when the global exposure mode is adopted, the positive direction of the conversion ADC comparator (400) is connected with the output signal of the analog front end (200), and the negative direction thereof is connected with the Ramp signal Ramp;
when the roller shutter exposure mode is adopted, the analog front end (200) collects a reset signal and a photoelectric signal in sequence, outputs a common-mode signal Vcm firstly and outputs a photoelectric signal Vsig secondly;
the Ramp generator (300) generates a twice-rising Ramp signal Ramp to quantitatively model the common-mode signal Vcm and the photo-electric signal Vsig, respectively;
a Ramp signal Ramp is input to the positive end of the conversion ADC comparator (400), an output signal of the analog front end (200) is input to the negative end of the conversion ADC comparator (400), and the conversion ADC comparator (400) outputs a rising edge overturning signal Vcomp;
the ADC counter (600) receives and counts the turnover signal Vcomp;
when the system is in a global exposure mode, the analog front end (200) collects a photoelectric signal and a reset signal in sequence, outputs a photoelectric signal Vsig and then outputs a common-mode signal Vcm;
the Ramp generator (300) generates a twice falling Ramp signal Ramp to quantize analog the photo signal Vsig and the common mode signal Vcm, respectively;
the positive end of the conversion ADC comparator (400) inputs an output signal of the analog front end (200), the negative end of the conversion ADC comparator inputs a Ramp signal Ramp, and the conversion ADC comparator (400) outputs a rising edge overturning signal Vcomp';
the ADC counter (600) receives and counts the flip signal Vcomp'.
4. The data conversion apparatus of a double-exposure CMOS image sensor according to claim 3, further comprising a calibration ADC comparator (500);
when in a rolling shutter exposure mode, the negative end of the calibration ADC comparator (500) is connected with a turnover signal Vcomp, and the positive end thereof is connected with the Ramp signal Ramp;
when the global exposure mode is adopted, the positive direction of the calibration ADC comparator (500) is terminated by the flip signal Vcomp', and the negative direction thereof is terminated by the Ramp signal Ramp.
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