CN111403473B - Two-dimensional material-based field effect rectifier and preparation method thereof - Google Patents
Two-dimensional material-based field effect rectifier and preparation method thereof Download PDFInfo
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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Abstract
The invention belongs to the field of rectifiers, and particularly discloses a field effect rectifier based on a two-dimensional material and a preparation method thereof. The field effect rectifier comprises a substrate, a channel layer and a depletion layer which are sequentially arranged from bottom to top, and also comprises a source electrode and a drain electrode which are arranged on two sides of the depletion layer, wherein the channel layer is made of two-dimensional molybdenum disulfide, so that the size of a device of the field effect rectifier is reduced, and the depletion layer is used for depleting current carriers of the channel layer and improving the field effect regulation and control capability of the field effect rectifier. The two-dimensional molybdenum disulfide material is used as the channel layer of the field effect rectifier, so that the size of a device is greatly reduced, the realization of higher integration level is facilitated, and meanwhile, the depletion layer is additionally arranged and used for depleting current carriers of the channel layer, so that the regulation and control performance of an electric field on the channel layer can be effectively improved, the field effect rectifier based on the two-dimensional material obtains a larger rectification ratio, and a good rectification characteristic is shown under a pulse test.
Description
Technical Field
The invention belongs to the field of rectifiers, and particularly relates to a field effect rectifier based on a two-dimensional material and a preparation method thereof.
Background
The rectifier is a device for converting an alternating current signal into a direct current signal, and is mainly realized by a silicon-based PN junction diode at present. The preparation method mainly comprises the steps of preparing a P-type semiconductor and an N-type semiconductor on the same silicon-based substrate adjacently by using different doping processes, and realizing the rectification characteristic by using the one-way conductivity of the formed PN junction region. The field effect rectifier is a rectifier which utilizes the regulation and control of a grid electrode on a channel material to realize the rectification characteristic, has the advantages of low conducting voltage, high breakdown voltage and the like compared with a common PN junction rectifier, and has more advantages in the aspect of a power integrated circuit. CN101562182A discloses an integrated HEMT and lateral field effect rectifier combination, method and system, which provides a field effect rectifier based on gallium nitride and aluminum gallium nitrogen materials. The invention uses carbon tetrafluoride plasma processing technology to exhaust a two-dimensional electron gas channel below a gate electrode, and controls a channel switch through gate voltage to realize rectification characteristic. The forward conduction voltage of the rectifier is 0.63 volt, the reverse breakdown voltage is 390 volt, and the rectifier has low forward conduction voltage and high reverse breakdown voltage and shows excellent rectification performance. However, the existing field effect rectifier generally has the problems of relatively large device size and limited application scene.
In recent years, the preparation of rectifiers from two-dimensional materials has become a major research hotspot. Different from the traditional PN junction rectifier, the two-dimensional rectifier does not need to be prepared by a doping process, and channel carriers of the two-dimensional rectifier can be well regulated and controlled by an external electric field, so that the multi-state adjustable current characteristic which is not possessed by the traditional PN junction device is shown. In 2014, michole et al, the university of dalf science in the netherlands, prepared a two-dimensional black phosphorus-based dual-gate control structure rectifying device, and realized three states of bidirectional conduction, positive-layer black phosphorus PN junctions and negative-direction conduction by controlling the voltage of the dual gates (photonic effect in feed-layer black phosphorus depletion by local electrical switching [ J ]. Nature Communications,2014,5: 4651). In 2017, Lidong et al, college of physical sciences and engineering, Tongji university, prepared a black phosphorus/tungsten diselenide molecular layer stacked Heterojunction structure, and realized two states of a Gate-Controlled BP-WSe2 Heterojunction for Logic Rectifiers and Logic operations [ J ] Small,2017,13(21)) on a single device.
The two-dimensional material has the characteristic of nanometer scale, can well utilize the field effect to adjust and control the current carrier of the channel of the two-dimensional material, is beneficial to the realization of the field effect rectifier, and can effectively reduce the device size of the field effect rectifier. However, the application of the two-dimensional material in the preparation of the field effect rectifier has the problems of complex process, poor product stability, insufficient field effect regulation and control capability and the like.
Disclosure of Invention
Aiming at the defects or improvement requirements in the prior art, the invention provides a field effect rectifier based on a two-dimensional material and a preparation method thereof, wherein a channel layer of the field effect rectifier is made of two-dimensional molybdenum disulfide, the size of a device of the field effect rectifier can be effectively reduced, and meanwhile, a depletion layer is arranged for depleting current carriers of the channel layer, so that the field effect regulation and control capability of the field effect rectifier is improved.
In order to achieve the above object, according to one aspect of the present invention, a field effect rectifier based on a two-dimensional material is provided, the field effect rectifier includes a substrate, a channel layer, and a depletion layer, which are sequentially disposed from bottom to top, and also includes a source electrode and a drain electrode disposed on two sides of the depletion layer, where the channel layer is made of two-dimensional molybdenum disulfide, so as to reduce a device size of the field effect rectifier, and the depletion layer is used to deplete carriers of the channel layer, thereby improving a field effect regulation capability of the field effect rectifier.
As a further preferred, the depletion layer is made of a P-type molecular material including zinc phthalocyanine, copper phthalocyanine and pentacene.
Preferably, the substrate is a silicon wafer with a silicon oxide layer, the silicon oxide layer is a dielectric layer, and the silicon wafer is a substrate.
More preferably, the thickness of the silicon oxide layer in the substrate is 90nm to 300 nm.
More preferably, the thickness of the channel layer is 3nm to 10nm, and the thickness of the depletion layer is 0.6 to 1.2 nm.
More preferably, the source electrode and the drain electrode are chromium electrodes, and the thickness thereof is 5nm to 10 nm.
More preferably, the source electrode and the drain electrode are gold electrodes, and the thickness thereof is 90nm to 100 nm.
According to another aspect of the present invention, there is provided a method for preparing the field effect rectifier based on the two-dimensional material, the method comprising the steps of:
s1, mechanically stripping the molybdenum disulfide single crystal to prepare the two-dimensional molybdenum disulfide, and then transferring the two-dimensional molybdenum disulfide to the substrate to prepare the channel layer;
s2, preparing an electrode pattern on the channel layer by using an electron beam lithography process;
s3 depositing chromium or gold on the channel layer through a thermal evaporation method, so as to manufacture the source electrode and the drain electrode;
s4, preparing the depletion layer on the surface of the channel layer in a molecular self-assembly mode, and thus preparing the field effect rectifier based on the two-dimensional material.
As a further preference, the step S4 includes the following sub-steps:
s41, placing the device obtained in the step S3 in a P-type molecule/trichloromethane solution to be soaked for 20-40 minutes;
s42, taking out the device after soaking, and cleaning the device with isopropanol solution;
s43, after the cleaning is finished, the device is heated for 15-20 minutes at 80-100 ℃, so that molecular self-assembly is completed, and the field effect rectifier based on the two-dimensional material is prepared.
Generally, compared with the prior art, the above technical solution conceived by the present invention mainly has the following technical advantages:
1. the invention provides a field effect rectifier based on a two-dimensional material, wherein the two-dimensional molybdenum disulfide material is used as a channel layer of the field effect rectifier, compared with the field effect rectifier prepared by the traditional material, the size of a device is greatly reduced, and the realization of higher integration level is facilitated;
2. particularly, the depletion layer is prepared by utilizing the P-type molecular material, and parameters of the substrate, the channel layer, the depletion layer, the source electrode and the drain electrode are optimized, so that the regulation and control performance of the field effect rectifier based on the two-dimensional material can be further improved, and the stability of the performance of the field effect rectifier is ensured;
3. in addition, in the preparation method of the field effect rectifier based on the two-dimensional material, the depletion layer is prepared by utilizing the molecular self-assembly reaction, compared with the preparation method of stacking a plurality of layers of two-dimensional materials, the complicated multiple transfer process is avoided, the preparation process is simplified, meanwhile, the influence of residual glue on the performance of the field effect rectifier in the multiple transfer process can be avoided, and the field effect rectifier with excellent regulation and control performance and good stability is further obtained;
4. meanwhile, the invention can ensure that the distribution of the depletion layer is more uniform by optimizing the process parameters in the preparation process of the depletion layer, thereby ensuring the depletion effect of the depletion layer on the channel layer and improving the regulation performance and the stability of the field effect rectifier.
Drawings
FIG. 1 is a schematic diagram of a field effect rectifier based on two-dimensional materials according to the present invention;
FIG. 2 is a graph comparing the atomic force profiles of the channel layer before and after the modification of the depletion layer in example 1, in which a is the atomic force profile of the channel layer before the modification of the depletion layer; b is an atomic force morphology graph of the channel layer after the depletion layer is modified;
fig. 3 is an atomic force topography of the channel layer prepared in example 1;
fig. 4 is an output characteristic curve of the first field effect rectifier without the depletion layer in embodiment 1;
fig. 5 is an output characteristic curve of the second field effect rectifier provided with a depletion layer in embodiment 1, in which a is a linear coordinate system and b is a logarithmic coordinate system;
fig. 6 is a pulse voltage applied in a pulse performance test of the second field effect rectifier provided with a depletion layer in example 1;
fig. 7 is a graph showing the results of a pulse performance test of the second field effect rectifier provided with a depletion layer in example 1.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
As shown in fig. 1, an embodiment of the present invention provides a field effect rectifier based on a two-dimensional material, where the field effect rectifier includes a substrate, a channel layer, and a depletion layer, which are sequentially disposed from bottom to top, and also includes a source electrode and a drain electrode disposed on two sides of the depletion layer, where the channel layer is made of two-dimensional molybdenum disulfide, so as to reduce the device size of the field effect rectifier, and the depletion layer is made of a P-type molecular material, including zinc phthalocyanine, copper phthalocyanine, or pentacene, and is used to deplete carriers in the channel layer, thereby improving the field effect regulation capability of the field effect rectifier.
Furthermore, the substrate is a silicon wafer with a silicon oxide layer for regulating and controlling the channel layer, the silicon oxide layer is a dielectric layer, the silicon wafer is a substrate, wherein the silicon oxide layer is too thick and can weaken the regulating and controlling capability of the silicon oxide layer on the channel layer, and the field effect rectifier generates a leakage phenomenon if the silicon oxide layer is too thin, so the thickness of the silicon oxide layer in the substrate is preferably 90 nm-300 nm.
Furthermore, the thickness of the channel layer is 3 nm-10 nm, the thickness of the depletion layer is 0.6-1.2 nm, and the channel layer can be effectively depleted by the depletion layer through the interaction of the two parameters, and meanwhile, the stability of the performance of the field effect rectifier is guaranteed.
Further, when the source electrode and the drain electrode are chromium electrodes, the thickness of the chromium electrodes is 5 nm-10 nm; when the source electrode and the drain electrode are gold electrodes, the thickness of the gold electrodes is 90 nm-100 nm.
According to another aspect of the present invention, there is provided a method for manufacturing a two-dimensional material-based field effect rectifier, the method comprising the steps of:
s1, mechanically stripping the molybdenum disulfide single crystal to prepare two-dimensional molybdenum disulfide, and then transferring the molybdenum disulfide single crystal to a substrate to prepare a channel layer, wherein the specific process is as follows:
s11, placing molybdenum disulfide single crystals on the adhesive tape, and repeatedly tearing the adhesive tape to perform mechanical stripping;
s12, adhering the adhesive tape stained with the molybdenum disulfide on blocky Polydimethylsiloxane (PDMS), lightly pressing the adhesive tape with fingers to enable the adhesive tape to be tightly adhered to the PDMS, and slightly uncovering the adhesive tape after keeping for a period of time, so that the molybdenum disulfide on the adhesive tape is transferred to the surface of the PDMS;
s13, aligning PDMS to a silicon wafer, slightly pressing to remove air on an interface, uncovering the PDMS, searching for two-dimensional molybdenum disulfide under an optical microscope, and recording the position of the two-dimensional molybdenum disulfide to obtain a channel layer;
s14 subsequently performing thickness characterization on the two-dimensional molybdenum disulfide transferred onto the silicon wafer by using an atomic force microscope, so as to ensure that the thickness of the channel layer is within a proper range, thereby ensuring the depletion effect of the depletion layer, fig. 3 is an atomic force morphology diagram of the channel layer in preferred embodiment 1 of the present invention, where the thickness of the two-dimensional molybdenum disulfide is about 6 nm;
s2 preparing an electrode pattern on the channel layer by using an electron beam lithography process, which comprises the steps of:
s21 spin-coating an electro-resist PMMA (polymethyl methacrylate) on the surface of the silicon wafer through a spin coater, spin-coating for 1 minute at the rotating speed of 4000r/min, and drying the glue on a heating plate at the temperature of 150 ℃ for 5 minutes;
s22, placing the sample into a scanning electron microscope, exposing the sample to a designed electrode pattern by using an electron beam exposure system, developing the electrode pattern in a developing solution (AR600-56) for 90 seconds after exposure is finished, and fixing the electrode pattern in isopropanol for 30 seconds;
s3, placing the sample into a vacuum film plating machine, and depositing chromium or gold on the channel layer by a thermal evaporation method to prepare a source electrode and a drain electrode;
s4, preparing a depletion layer on the surface of the channel layer in a molecular self-assembly mode, and thus preparing the field effect rectifier based on the two-dimensional material, wherein the specific process is as follows:
s41, placing the device obtained in the step S3 in a P-type molecule/trichloromethane solution to be soaked for 20-40 minutes, ensuring that the distribution of a depletion layer is uniform, and further improving the depletion effect of the depletion layer on the channel layer;
s42, taking out the device after soaking, and cleaning the device with isopropanol solution;
s43, after the cleaning is finished, the device is heated for 15-20 minutes at 80-100 ℃, so that molecular self-assembly is completed, and the field effect rectifier based on the two-dimensional material is prepared.
The invention is further illustrated by the following specific examples.
Example 1
S1, mechanically stripping the molybdenum disulfide single crystal to prepare two-dimensional molybdenum disulfide, and transferring the molybdenum disulfide single crystal to a substrate to prepare a channel layer with the thickness of 6nm, wherein the atomic force morphology schematic diagram of the channel layer is shown in figure 3, and the substrate is a silicon wafer with a 300nm silicon oxide layer;
s2, preparing an electrode pattern on the channel layer by using an electron beam lithography process;
s3 depositing a chromium electrode with the thickness of 5nm on the channel layer by a thermal evaporation method to prepare a source electrode and a drain electrode;
s4, preparing a depletion layer on the surface of the channel layer in a molecular self-assembly mode, and thus preparing the field effect rectifier based on the two-dimensional material, wherein the specific process is as follows:
s41, placing the device obtained in the step S3 in a zinc phthalocyanine/trichloromethane solution for soaking for 40 minutes;
s42, taking out the device after soaking, and cleaning the device with isopropanol solution;
s43, after the cleaning is finished, the device is heated for 15 minutes at 100 ℃, so that the molecular self-assembly is completed, a depletion layer with the thickness of 1.2nm is obtained, and finally the field effect rectifier based on the two-dimensional material is prepared.
FIG. 2 is a comparison graph of atomic force morphology of a channel layer before and after modification of a depletion layer, and a comparison of a and b shows that after the depletion layer is prepared in a molecular self-assembly mode, a layer of zinc phthalocyanine particles is uniformly distributed on the surface of two-dimensional molybdenum disulfide.
The present invention performs an output characteristic curve test on the first field effect rectifier without the depletion layer manufactured in step S3 and the second field effect rectifier with the depletion layer manufactured in step S4, respectively. And respectively tying probes of a probe station on three electrodes of a source electrode, a drain electrode and a grid electrode of the first field effect rectifier and the second field effect rectifier, keeping the grid electrode and the source electrode grounded, applying a scanning voltage ranging from-15 volts to +15 volts to the drain electrode, and reading corresponding drain current through a semiconductor analyzer.
Fig. 4 is an output characteristic curve of the first field effect rectifier without the depletion layer, which has almost no rectification characteristic. FIG. 5 is a graph showing the output characteristics of a second field effect rectifier having a depletion layer, wherein a is a linear coordinate system and b is a logarithmic coordinate system, as shown by a GND state curve in b of FIG. 5, after zinc phthalocyanine molecules are modified as the depletion layerThe forward conduction current of the effect rectifier is about 10-6Ampere, reverse off current of about 10-11Ampere, rectification ratio can reach 105. By comparing fig. 4 and fig. 5, it is found that the rectification performance of the device is greatly improved after the zinc phthalocyanine depletion layer is added.
In fig. 5, the float state is an output characteristic curve obtained by applying a scan voltage ranging from-15 volts to +15 volts to the drain with the probe of the probe station stuck only to the source and the drain, keeping the source grounded, and it can be seen that it does not exhibit a significant rectification characteristic. The GND state is that probes of a probe station are respectively tied on a source electrode, a drain electrode and a grid electrode, the source electrode and the grid electrode are kept in a grounding state, a scanning voltage ranging from-15 volts to +15 volts is applied to the drain electrode to obtain an output characteristic curve, and the device shows obvious rectification. It can be seen that the rectification of the field effect rectifier results from the regulation of the channel layer by the electric field between the drain and the gate.
And performing a pulse performance test on the second field effect rectifier provided with the depletion layer and prepared in the step S4. The probes of the probe station are respectively tied on the source electrode, the drain electrode and the grid electrode of the first field effect rectifier and the second field effect rectifier, the grid electrode is kept grounded, pulse voltage with the voltage of 5 volts and the frequency of 1 Hz is applied to the drain electrode as shown in figure 6, and corresponding pulse current is read through the source electrode. As shown in fig. 7, when the negative pulse voltage is applied, the rectifier is turned on; when a positive pulse voltage is applied, the rectifier is turned off, and typical rectification characteristics are exhibited.
Example 2
S1, mechanically stripping the molybdenum disulfide single crystal to prepare two-dimensional molybdenum disulfide, and then transferring the molybdenum disulfide single crystal to a substrate to prepare a channel layer with the thickness of 3nm, wherein the substrate is a silicon wafer with a 300nm silicon oxide layer;
s2, preparing an electrode pattern on the channel layer by using an electron beam lithography process;
s3, depositing a 90nm thick gold electrode on the channel layer by a thermal evaporation method to obtain a source electrode and a drain electrode;
s4, preparing a depletion layer on the surface of the channel layer in a molecular self-assembly mode, and thus preparing the field effect rectifier based on the two-dimensional material, wherein the specific process is as follows:
s41, placing the device obtained in the step S3 in a zinc phthalocyanine/trichloromethane solution for soaking for 20 minutes;
s42, taking out the device after soaking, and cleaning the device with isopropanol solution;
s43, after the cleaning is finished, the device is heated for 20 minutes at 80 ℃, so that the molecular self-assembly is completed, a depletion layer with the thickness of 0.6nm is obtained, and finally the field effect rectifier based on the two-dimensional material is prepared.
Example 3
S1, mechanically stripping the molybdenum disulfide single crystal to prepare two-dimensional molybdenum disulfide, and then transferring the molybdenum disulfide single crystal to a substrate to prepare a channel layer with the thickness of 10nm, wherein the substrate is a silicon wafer with a 90nm silicon oxide layer;
s2, preparing an electrode pattern on the channel layer by using an electron beam lithography process;
s3, depositing a gold electrode with the thickness of 100nm on the channel layer by a thermal evaporation method, and thus preparing a source electrode and a drain electrode;
s4, preparing a depletion layer on the surface of the channel layer in a molecular self-assembly mode, and thus preparing the field effect rectifier based on the two-dimensional material, wherein the specific process is as follows:
s41, placing the device obtained in the step S3 in a zinc phthalocyanine/trichloromethane solution for soaking for 40 minutes;
s42, taking out the device after soaking, and cleaning the device with isopropanol solution;
s43, after the cleaning is finished, the device is heated for 15 minutes at 100 ℃, so that the molecular self-assembly is completed, a depletion layer with the thickness of 1.2nm is obtained, and finally the field effect rectifier based on the two-dimensional material is prepared.
Example 4
S1, mechanically stripping the molybdenum disulfide single crystal to prepare two-dimensional molybdenum disulfide, and then transferring the molybdenum disulfide single crystal to a substrate to prepare a channel layer with the thickness of 6nm, wherein the substrate is a silicon wafer with a 90nm silicon oxide layer;
s2, preparing an electrode pattern on the channel layer by using an electron beam lithography process;
s3, depositing a gold electrode with the thickness of 95nm on the channel layer by a thermal evaporation method, and thus preparing a source electrode and a drain electrode;
s4, preparing a depletion layer on the surface of the channel layer in a molecular self-assembly mode, and thus preparing the field effect rectifier based on the two-dimensional material, wherein the specific process is as follows:
s41, placing the device obtained in the step S3 in a copper phthalocyanine/trichloromethane solution to be soaked for 30 minutes;
s42, taking out the device after soaking, and cleaning the device with isopropanol solution;
s43, after the cleaning is finished, the device is heated for 20 minutes at 90 ℃, so that the molecular self-assembly is completed, a depletion layer with the thickness of 0.9nm is obtained, and finally the field effect rectifier based on the two-dimensional material is prepared.
Example 5
S1, mechanically stripping the molybdenum disulfide single crystal to prepare two-dimensional molybdenum disulfide, and then transferring the molybdenum disulfide single crystal to a substrate to prepare a channel layer with the thickness of 8nm, wherein the substrate is a silicon wafer with a 200nm silicon oxide layer;
s2, preparing an electrode pattern on the channel layer by using an electron beam lithography process;
s3 depositing a chromium electrode with the thickness of 10nm on the channel layer by a thermal evaporation method to prepare a source electrode and a drain electrode;
s4, preparing a depletion layer on the surface of the channel layer in a molecular self-assembly mode, and thus preparing the field effect rectifier based on the two-dimensional material, wherein the specific process is as follows:
s41, soaking the device obtained in the step S3 in a pentacene/trichloromethane solution for 40 minutes;
s42, taking out the device after soaking, and cleaning the device with isopropanol solution;
s43, after the cleaning is finished, the device is heated for 15 minutes at 100 ℃, so that the molecular self-assembly is completed, a depletion layer with the thickness of 1.2nm is obtained, and finally the field effect rectifier based on the two-dimensional material is prepared.
It will be understood by those skilled in the art that the foregoing is merely a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included within the scope of the present invention.
Claims (8)
1. A field effect rectifier based on a two-dimensional material is characterized by comprising a substrate, a channel layer and a depletion layer which are sequentially arranged from bottom to top, and a source electrode and a drain electrode which are arranged on two sides of the depletion layer, wherein the channel layer is made of two-dimensional molybdenum disulfide, so that the size of a device of the field effect rectifier is reduced, and the depletion layer is used for depleting current carriers of the channel layer, so that the field effect regulation and control capability of the field effect rectifier is improved; wherein the depletion layer is made of a P-type molecular material including zinc phthalocyanine, copper phthalocyanine and pentacene.
2. The two-dimensional material based field effect rectifier of claim 1 wherein the substrate is a silicon wafer with a silicon oxide layer, the silicon oxide layer being a dielectric layer, the silicon wafer being a base.
3. The two-dimensional material based field effect rectifier of claim 2, wherein the thickness of the silicon oxide layer in the substrate is between 90nm and 300 nm.
4. The two-dimensional material based field effect rectifier of claim 1, wherein the channel layer has a thickness of 3nm to 10nm and the depletion layer has a thickness of 0.6 to 1.2 nm.
5. The two-dimensional material based field effect rectifier according to any of claims 1-4, wherein the source and drain electrodes are chromium electrodes having a thickness of 5nm to 10 nm.
6. The two-dimensional material based field effect rectifier according to any of claims 1-4, wherein the source and drain electrodes are gold electrodes having a thickness of 90nm to 100 nm.
7. A method for preparing a field effect rectifier based on two-dimensional materials according to any claim 1 to 6, wherein the method comprises the following steps:
s1, mechanically stripping the molybdenum disulfide single crystal to prepare the two-dimensional molybdenum disulfide, and then transferring the two-dimensional molybdenum disulfide to the substrate to prepare the channel layer;
s2, preparing an electrode pattern on the channel layer by using an electron beam lithography process;
s3 depositing chromium or gold on the channel layer through a thermal evaporation method, so as to manufacture the source electrode and the drain electrode;
s4, preparing the depletion layer on the surface of the channel layer in a molecular self-assembly mode, and thus preparing the field effect rectifier based on the two-dimensional material.
8. The method for preparing a two-dimensional material based field effect rectifier of claim 7, wherein the step S4 includes the following sub-steps:
s41, placing the device obtained in the step S3 in a P-type molecule/trichloromethane solution to be soaked for 20-40 minutes;
s42, taking out the device after soaking, and cleaning the device with isopropanol solution;
s43, after the cleaning is finished, the device is heated for 15-20 minutes at 80-100 ℃, so that molecular self-assembly is completed, and the field effect rectifier based on the two-dimensional material is prepared.
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