CN111394784B - Silicon single crystal growth apparatus and silicon single crystal growth method - Google Patents
Silicon single crystal growth apparatus and silicon single crystal growth method Download PDFInfo
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- CN111394784B CN111394784B CN202010162411.6A CN202010162411A CN111394784B CN 111394784 B CN111394784 B CN 111394784B CN 202010162411 A CN202010162411 A CN 202010162411A CN 111394784 B CN111394784 B CN 111394784B
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 179
- 239000010703 silicon Substances 0.000 title claims abstract description 179
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 174
- 239000013078 crystal Substances 0.000 title claims description 68
- 238000002109 crystal growth method Methods 0.000 title description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 180
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 180
- 239000001301 oxygen Substances 0.000 claims abstract description 180
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 78
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 33
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 23
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 18
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 11
- 238000004321 preservation Methods 0.000 abstract description 5
- 238000009826 distribution Methods 0.000 description 21
- 239000007788 liquid Substances 0.000 description 17
- 125000004430 oxygen atom Chemical group O* 0.000 description 14
- 230000008569 process Effects 0.000 description 11
- 230000007423 decrease Effects 0.000 description 8
- 230000009471 action Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 238000010420 art technique Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a monocrystalline silicon growing device and a monocrystalline silicon growing method, wherein the monocrystalline silicon growing device comprises: and a container, wherein the container is a silicon dioxide piece, a containing cavity for containing silicon melt is defined in the container, and the wall thickness of the container is increased in a direction along the radial direction of the container. According to the single-crystal silicon growth apparatus of the embodiment of the invention, by arranging the container for containing the silicon melt in the radially inward direction of the container, the wall thickness of the container is increased, the heat preservation effect of the container can be enhanced, the temperature of the silicon melt in the container is increased, the solubility of oxygen can be increased, the oxygen content of the silicon melt can be increased, and the oxygen content of the grown single-crystal silicon can be increased.
Description
Technical Field
The invention relates to the technical field of monocrystalline silicon growth, in particular to a monocrystalline silicon growth device and a monocrystalline silicon growth method.
Background
The silicon wafer has certain oxygen content, can combine with a device process to form internal gettering, can absorb metal impurities, and can pin dislocation of the oxygen impurities, so that the mechanical strength of the silicon wafer is improved. The problem of increasing the oxygen content of single crystal silicon is not easy to be solved in the manufacturing process, especially in the product which has no external magnetic field and stable manufacturing process.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. To this end, an object of the present invention is to provide a single-crystal silicon growth apparatus that can increase the oxygen content in single-crystal silicon grown by the single-crystal silicon growth apparatus.
The invention also provides a monocrystalline silicon growth method.
The invention also provides another monocrystalline silicon growing method.
According to an embodiment of the first aspect of the invention, the single crystal silicon growth apparatus comprises: a container, the container being a silica piece, the container defining a containing cavity therein for containing a silicon melt, the container having a wall thickness that increases in a radially inward direction of the container.
According to the single-crystal silicon growth apparatus of the embodiment of the invention, by arranging the container for containing the silicon melt in the radially inward direction of the container, the wall thickness of the container is increased, the heat preservation effect of the container can be enhanced, the temperature of the silicon melt in the container is increased, the solubility of oxygen can be increased, the oxygen content of the silicon melt can be increased, and the oxygen content of the grown single-crystal silicon can be increased.
According to some embodiments of the invention, the wall thickness of the container increases stepwise in a direction radially inwards of the container.
According to some alternative embodiments of the invention, the inner wall of the container is stepped in a radially inward direction of the container; and/or, in a direction radially inward of the container, the outer wall of the container is stepped.
Optionally, an inner wall of the vessel is stepped in a radially inward direction of the vessel, at least a portion of the stepped structure being located at a bottom wall of the vessel or at least a portion adjacent to a taylor-prodermann vortex of the silicon melt.
Optionally, in a radially inward direction of the container, the inner wall of the container is in a stepped structure, the stepped structure includes stepped surfaces extending inward substantially in a wall thickness direction of the container, the stepped surfaces extending in a circumferential direction of the container, and distances between adjacent two of the stepped surfaces decrease sequentially in the radially inward direction of the container.
According to some embodiments of the invention, the container comprises a plurality of sub-containers stacked in a thickness direction of the container, and a stepped structure is defined between two adjacent sub-containers.
According to some embodiments of the present invention, the inner wall of the container is formed with a rugged structure, which is a stepped structure or a granular structure, at a position adjacent to the taylor-prodeman vortex of the silicon melt.
According to some embodiments of the invention, the container comprises a container body and an oxygen increasing piece detachably arranged on the inner wall of the container body, the oxygen increasing piece is a silicon dioxide piece, and the oxygen increasing piece is arranged on the inner wall of the container body to increase the inner surface area of the container.
According to some embodiments of the invention, the location of maximum wall thickness of the container is adjacent to a taylor-prodeman vortex of the silicon melt.
According to a single-crystal silicon growth method of an embodiment of the second aspect of the present invention, a single-crystal silicon growth apparatus for growing single-crystal silicon includes a container, which is a silicon dioxide piece, defining a containing chamber for containing a silicon melt therein, the wall thickness of which increases in a radially inward direction of the container, and single-crystal silicon is grown from the silicon melt in the containing chamber during rotation of the container, and the temperature of the silicon melt in the container adjacent to the bottom of the container increases due to the increase in the wall thickness of the container in the radially inward direction of the container, so that the solubility of oxygen can be increased, and thus the oxygen content in the silicon melt can be increased, and thus the oxygen content of the grown single-crystal silicon can be increased.
According to the single-silicon-crystal growing method of the embodiment of the present invention, by using the container whose wall thickness is increased in the radially inward direction as the container containing the silicon melt, during the growth of the single-silicon crystal, the temperature of the silicon melt in the container adjacent to the bottom of the container is increased due to the increase in the wall thickness of the container in the radially inward direction of the container, so that the oxygen content in the silicon melt is increased.
According to some embodiments of the invention, the location of maximum wall thickness of the container is adjacent to a taylor-prodeman vortex of the silicon melt.
According to some embodiments of the invention, an inner surface area of the container at a taylor-prodeman vortex of the silicon melt is increased.
Optionally, a portion of the inner wall of the container located at the taylor-prodeman vortex of the silicon melt is formed with a rugged structure.
Optionally, the container comprises a container body and an oxygen increasing piece detachably arranged on the inner wall of the container body, wherein the oxygen increasing piece is a silicon dioxide piece, and the oxygen increasing piece can increase the inner surface area of the container at the Taylor-Prudman vortex of the silicon melt.
According to some embodiments of the invention, the container rotates at a speed of not less than 5RPM, the ingot in the container rotates at a speed of not less than 1RPM, and the container rotates in a direction opposite to the ingot.
According to a single-crystal silicon growing method of an embodiment of the third aspect of the present invention, a single-crystal silicon growing apparatus includes a container, the container is a silicon dioxide piece, a containing cavity for containing a silicon melt is defined in the container, and an inner surface area of the container, which is located at a Taylor-Prudman vortex of the silicon melt, is increased, so that an oxygen content in the silicon melt is increased.
According to the single-crystal silicon growing method provided by the embodiment of the invention, the contact area of the silicon melt in the container and the inner wall of the container can be increased by increasing the inner surface area of the container, which is positioned at the Taylor-Prudman vortex of the silicon melt, so that more oxygen decomposed on the inner wall of the container enters the melt through the vortex, the oxygen content in the silicon melt is increased, and the oxygen content of the grown single-crystal silicon can be increased.
According to some embodiments of the invention, a portion of the inner wall of the container located at the taylor-prodeman vortex is formed with a rugged structure, the rugged structure being a stepped structure or a granular structure.
According to some embodiments of the present invention, the container includes a container body and an oxygen increasing member detachably provided to an inner wall of the container body, the oxygen increasing member being a silica member, by which an inner surface area of the container at a taylor-prodeman vortex of the silicon melt can be increased.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a schematic view of a container of a single crystal silicon growth apparatus according to some embodiments of the invention;
FIG. 2 is a schematic view of a container of a single crystal silicon growth apparatus according to further embodiments of the present invention;
FIG. 3 is a schematic view of a container of a single crystal silicon growth apparatus according to further embodiments of the present invention;
FIG. 4 is a schematic illustration of the distribution of eddy currents in a silicon melt within a single crystal silicon growth apparatus utilizing a silicon single crystal growth apparatus according to some embodiments of the present invention;
FIG. 5 is a schematic illustration of the oxygen distribution of a silicon melt within a single crystal silicon growth apparatus utilizing a related art technique;
FIG. 6 is a first schematic diagram of the oxygen distribution of the silicon melt within vessel 1 utilizing a single silicon crystal growth process in accordance with the present invention;
FIG. 7 is a schematic illustration of the oxygen distribution of the silicon melt within vessel 1 utilizing a single silicon crystal growth process in accordance with the present invention;
FIG. 8 is a graph comparing oxygen profiles of the ingots of FIGS. 5, 6 and 7 at the same time along the radial direction;
FIG. 9 is a comparison of the schematic vortex flow of silicon melt in a vessel for the same ingot rotation speed and different vessel rotation speeds;
FIG. 10 is a comparison of the schematic vortex flow of silicon melt in a vessel for different ingot rotation speeds and the same vessel rotation speed.
Reference numerals:
a container 1; a housing chamber 11; a step surface 12; a sub-tank 13; a container body 14; an oxygen increasing member 15;
a silicon melt 2; a buoyant vortex 21; taylor-prodeman vortices 22; a transitional vortex 23.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
A single crystal silicon growth apparatus according to an embodiment of the present invention is described below with reference to fig. 1 to 4.
Referring to fig. 1, a single crystal silicon growth apparatus according to an embodiment of a first aspect of the present invention includes: container 1, container 1 being a silicon dioxide piece, container 1 defining therein a receiving cavity 11 for receiving silicon melt 2, container 1 having an increased wall thickness in a direction radially inward of container 1 (said inward means a direction adjacent to the center of container 1).
In growing single crystal silicon using the single crystal silicon growing apparatus, polycrystalline silicon may be placed in the accommodating chamber 11 of the container 1, and the polycrystalline silicon accommodated in the container 1 is melted by heating the container 1 to form the flowable silicon melt 2. And, a seed crystal (not shown) is placed in silicon melt 2, the seed crystal is rotated and container 1 may be rotated, and the rotation direction of container 1 may be the same as or opposite to the rotation direction of the seed crystal. In this process, a seed crystal is immersed in silicon melt 2 in container 1 to perform seeding, necking, shoulder rotation, and isodiametric growth of single crystal silicon, and silicon melt 2 in container 1 is gradually reduced, and finally a single crystal silicon ingot is grown.
During the growth process of the crystal bar, because the container 1 is a silicon dioxide piece, silicon dioxide in the inner wall of the container 1 is decomposed into oxygen atoms and silicon atoms under a high-temperature environment and enters the silicon melt 2, and the oxygen content in the container 1 has certain influence on the oxygen content of the crystal bar.
Further, referring to fig. 4, during the conventional single crystal growth without applying a magnetic field, three kinds of vortexes, namely, a buoyant vortex 21, a taylor-prodeman vortex 22, and a transition vortex 23, appear in the silicon melt 2 in the container 1 during the reverse rotation of the container 1 and the seed crystal, wherein the buoyant vortex 21 is located at the outermost (the outer being a direction away from the center of the container 1), the taylor-prodeman vortex 22 is located below the crystal rod (the product after the seed crystal starts to grow is referred to as the crystal rod), the taylor-prodeman vortex 22 is caused by the rotation of the container 1 or the rotation of both the container 1 and the crystal rod, and the transition vortex 23 is located between the buoyant vortex 21 and the taylor-prodeman vortex 22.
Since the wall thickness of container 1 of the single-crystal silicon growth apparatus of the present application is increased in the radially inward direction of container 1, and thus the wall thickness of the bottom wall of container 1 and the portion adjacent to the bottom wall of container 1 is made larger, the heat retaining effect of container 1 can be enhanced, so that the temperature of the portion of silicon melt 2 in container 1 adjacent to the bottom of container 1 is made higher, so that the oxygen solubility of this portion of silicon melt 2 is increased, and so that the oxygen precipitated from the inner wall of container 1 is more dissolved into this portion of silicon melt 2.
In addition, the greater wall thickness is provided at the taylor-prodeman vortex 22, on the basis of increasing the oxygen content of the container 1, the inner wall of the container 1 is further flushed and impacted by the taylor-prodeman vortex 22, so that oxygen atoms on the inner wall of the container 1 rise under the action of the taylor-prodeman vortex 22 and are brought into the silicon melt 2, and the oxygen atoms can be brought to the solid-liquid interface between the ingot and the silicon melt 2 by the continued rising action of the taylor-prodeman vortex 22, so as to further increase the oxygen content of the ingot.
Further, the inner wall of the container 1 is arranged in a step-like structure, so that the contact surface area of the container 1 and the silicon melt 2 can be increased, more oxygen in the container 1 can enter the silicon solution 2, and the oxygen content of the crystal bar is further increased.
In addition, during the ingot growth, the amount of silicon melt 2 in container 1 gradually decreases, and the contact area between silicon melt 2 and the inner wall of container 1 also gradually decreases, so that the amount of oxygen atoms on the inner wall of container 1 that can enter silicon melt 2 also decreases. Because the temperature of the container 1 adjacent to or at the taylor-prodeman vortex 22 is higher, the oxygen content in the silicon melt 2 adjacent to or at the taylor-prodeman vortex 22 is higher, so that the oxygen content at the tail of the crystal rod can be increased, the problem of lower oxygen content at the tail of the crystal rod can be solved, and the whole oxygen content distribution of the grown monocrystalline silicon is more uniform.
According to the silicon single crystal growth apparatus of the embodiment of the present invention, by arranging container 1 for containing silicon melt 2 in the radially inward direction of container 1, the wall thickness of container 1 is increased, the heat retaining effect of container 1 can be enhanced, the temperature of silicon melt 2 in container 1 is increased, and thus the solubility of oxygen can be increased, so that the oxygen content of silicon melt 2 can be increased, and further the oxygen content of grown silicon single crystal can be increased.
According to some embodiments of the present invention, referring to fig. 1-3, the location of the maximum wall thickness of container 1 is located adjacent to taylor-prodeman vortex 22 of silicon melt 2. The silicon melt 2 at the maximum wall thickness of the container 1 has a better heat preservation effect, so the temperature is higher, thereby more oxygen can be precipitated at the maximum wall thickness of the inner wall of the container 1, and because the maximum wall thickness of the container 1 is adjacent to the taylor-prodeman vortex 22 of the silicon melt 2, more oxygen precipitated at the maximum wall thickness of the container 1 can be brought upwards to the solid-liquid interface of the crystal bar and the silicon melt 2 by the taylor-prodeman vortex 22, thereby the oxygen content of the produced single crystal silicon can be better improved.
According to some embodiments of the invention, referring to fig. 1, the wall thickness of the container 1 increases stepwise in a direction radially inward of the container 1. Thereby, the contact surface area of the container 1 and the silicon melt 2 may be increased, so that more oxygen enters the silicon melt and thus further into the ingot.
For example, referring to fig. 1 to 3, the inner wall of the container 1 has a stepped structure in a radially inward direction of the container 1. Thus, the inner surface area of the container 1 can be increased, and the inner surface area of the inner wall of the container 1 adjacent to or at the bottom of the container 1 can be increased because the inner wall of the stepped structure portion of the container 1 is adjacent to or at the bottom of the container 1, so that the area of the inner wall of the container 1 contacting the taylor-prodhman vortex 22 can be increased, and the taylor-prodhman vortex 22 can bring more oxygen atoms on the inner wall of the container 1 into the silicon melt 2 and continuously rise and be brought into the solid-liquid interface of the silicon melt 2 and the ingot, thereby increasing the oxygen content of the ingot, and also increasing the oxygen content of the grown silicon single crystal. Particularly, in the later crystal bar growing process, the silicon melt 2 is reduced, so that the contact area between the container 1 and the silicon melt 2 is reduced, the oxygen entering the silicon bar is reduced, the stepped structure is arranged on the bottom wall of the container 1, the oxygen content at the tail of the crystal bar can be effectively improved, the problem that the oxygen content at the tail of the crystal bar is low is further solved, and the whole oxygen content distribution of the grown single crystal silicon is more uniform.
For another example, the outer wall of the container 1 has a stepped structure in a radially inward direction of the container 1. Thereby, it is achieved that the wall thickness of the container 1 increases stepwise in the radially inward direction. And, because the cascaded structure is located the outer wall of container 1, made things convenient for the processing of cascaded structure, reduced the processing degree of difficulty.
For another example, in the radially inward direction of container 1, the outer wall of container 1 has a stepped structure and the inner wall of container 1 has a stepped structure, whereby the wall thickness of the bottom of container 1 or a portion of container 1 adjacent to the bottom can be made larger, the heat insulating effect of container 1 can be made better, and at the same time, the inner surface area of the bottom wall or a portion adjacent to the bottom wall of container 1 can be made larger, the oxygen content of silicon melt 2 near the bottom of container 1 can be made better increased, and the oxygen content of single-crystal silicon can be made better increased.
Alternatively, referring to fig. 1-3, in a radially inward direction of vessel 1, the inner wall of vessel 1 has a stepped configuration, at least a portion of which is located at the bottom wall of vessel 1 or at least a portion of which is adjacent to taylor-prodermann vortex 22 of silicon melt 2. Thus, when the inner wall of the container 1 is in a stepped structure in the radially inward direction of the container 1, by locating at least a part of the stepped structure at the bottom wall of the container 1 or at least a part of the stepped structure adjacent to the Taylor-Prademann vortex 22 of the silicon melt 2, and at least a part of the stepped structure at the bottom wall of the container 1, since the Taylor-Prademann vortex 22 of the silicon melt 2 is adjacent to the bottom of the container 1, the inner surface area of the container 1 adjacent to the Taylor-Prademann vortex 22 can be increased, and the area of the inner wall of the container 1 in contact with the Taylor-Prademann vortex 22 can be increased, so that the Taylor-Prademann vortex 22 can bring more oxygen atoms on the inner wall of the container 1 into the silicon melt 2 and continue to rise and bring to the solid-liquid interface of the silicon melt 2 and the ingot, thereby increasing the oxygen content of the ingot, the oxygen content of the grown monocrystalline silicon can be increased. Moreover, the oxygen content at the tail of the crystal bar can be further improved, the problem that the oxygen content at the tail of the crystal bar is low is further solved, and the whole oxygen content distribution of the grown monocrystalline silicon is more uniform.
Alternatively, referring to fig. 1-3, the inner wall of vessel 1 has a stepped configuration in a radially inward direction of vessel 1, whereby the inner surface area of vessel 1 can be increased, and thus the contact area of silicon melt 2 with vessel 1 can be increased, increasing the oxygen content entering the silicon solution. The stepped structure includes stepped surface 12 extending inward substantially in the wall thickness direction of container 1, stepped surface 12 extending in the circumferential direction of container 1, and by providing stepped surface 12 extending in the circumferential direction of container 1, for example, stepped surface 12 may be formed in a ring shape extending in the circumferential direction of container 1, whereby the inner surface area of container 1 can be significantly increased, so that the oxygen content in silicon melt 2 can be further increased. Further, in a radially inward direction of the container 1, the distance between adjacent two stepped surfaces 12 decreases in order. Thereby, the distribution density of the stepped surface 12 of the inner wall of the container 1 in the portion adjacent to the center of the container 1 can be made larger, and the increase of the inner surface area of the portion adjacent to the taylor-prodeman vortex 22 in the inner wall of the container 1 is made more remarkable, so that the silicon melt 2 having a higher oxygen content can be brought up to the solid-liquid interface between the ingot and the silicon melt 2 by the taylor-prodeman vortex 22, and the content of the produced single crystal silicon can be improved more.
According to some embodiments of the present invention, referring to fig. 2, the container 1 includes a plurality of sub containers 13 stacked in a wall thickness direction of the container 1, and a stepped structure is defined between two adjacent sub containers 13, and the two adjacent sub containers 13 may be bonded. Therefore, the container 1 has a better heat preservation effect, so that more oxygen can be precipitated on the inner wall of the container 1, the oxygen content in the silicon melt 2 can be increased, and the oxygen content of the growing monocrystalline silicon can be increased. In addition, the sub-containers 13 with different numbers and thicknesses can be selected to be stacked according to requirements, and containers 1 with more specifications can be obtained.
Wherein, a plurality means two or more.
Alternatively, the wall thickness of the sub-containers 13 may be sequentially increased, the wall thickness of the sub-containers 13 may be sequentially decreased, or the wall thickness of all the sub-containers 13 may be the same in the wall thickness direction of the container 1 and the direction from the outside to the inside.
According to some embodiments of the present invention, referring to fig. 1, the container 1 may be an integrally formed part, thereby making the process of manufacturing the container 1 simple and facilitating the process of manufacturing the container 1.
According to some embodiments of the present invention, referring to fig. 1, the inner wall of container 1 is formed with a rugged structure, which is a stepped structure or a granular structure, at a position adjacent to taylor-prodeman vortex 22 of silicon melt 2. Therefore, by forming the rugged structure at the position where the inner wall of the vessel is adjacent to the taylor-prodeman vortex 22 of the silicon melt 2, the inner surface area of the inner wall of the vessel 1 adjacent to the taylor-prodeman vortex 22 can be increased, so that more oxygen can be precipitated at the position where the inner wall of the vessel 1 is adjacent to the taylor-prodeman vortex 22, and the precipitated oxygen can rise to the solid-liquid interface between the ingot and the silicon melt 2 under the action of the taylor-prodeman vortex 22, thereby increasing the oxygen content in the ingot, and further increasing the oxygen content of the grown silicon single crystal. Moreover, the uneven structure is a step-shaped structure or a granular structure, so that the inner surface area of the inner wall of the container 1 adjacent to the taylor-prodeman vortex 22 can be obviously increased, and the uneven structure is convenient to process and form.
According to some embodiments of the present invention, referring to fig. 3, the container 1 includes a container body 14 and an oxygen increasing member 15 detachably disposed on an inner wall of the container body 14, the oxygen increasing member 15 is a silica member, the oxygen increasing member 15 is disposed on the inner wall of the container body 14 to increase an inner surface area of the container 1, and the oxygen increasing member 15 may be disposed on a bottom wall of the container body 14, for example, the oxygen increasing member 15 may be adjacent to the taylor-prodeman vortex 22. After the oxygen increasing member 15 is disposed on the inner wall of the container body 14, the inner wall of the container 1 is made to have a rugged structure. Wherein, the oxygen increasing piece 15 can be in a step structure or the surface of the oxygen increasing piece 15 is in a particle structure, thereby further increasing the inner surface area of the container 1. Therefore, by arranging the container 1 to comprise the container body 14 and the oxygen increasing piece 15 which are detachably connected, on one hand, the oxygen increasing piece 15 with different shapes and structures can be installed in the container body 14 according to requirements so as to meet the requirements of oxygen content of different degrees; on the other hand, the container 1 can be manufactured more simply and universally, the working efficiency is improved, and the cost is saved.
Alternatively, when the container 1 includes the container body 14 and the oxygen increasing member 15 detachably disposed on the inner wall of the container body 14, an installation groove may be formed on the inner wall of the container body 14, for example, the bottom wall of the container body 14, and the oxygen increasing member 15 may be inserted into the installation groove, thereby facilitating the assembly and disassembly of the oxygen increasing member 15.
In addition, when the container 1 includes the container body 14 and the oxygen increasing member 15 detachably provided on the inner wall of the container body 14, the oxygen increasing member 15 can be conveniently provided at the taylor-prodeman vortex 22 in the container 1, so that the oxygen content of the produced single-crystal silicon can be increased better.
Referring to fig. 1 to 4, according to a single-silicon-crystal growing method of an embodiment of the second aspect of the present invention, a single-silicon-crystal growing apparatus for growing single-silicon crystal includes a container 1, the container 1 is a silicon dioxide piece, a containing chamber 11 for containing a silicon melt 2 is defined in the container 1, a wall thickness of the container 1 is increased in a radially inward direction of the container 1, single-silicon crystal is grown from the silicon melt 2 in the containing chamber 11 during rotation of the container 1, and a temperature of the silicon melt 2 adjacent to a bottom of the container 1 in the container 1 is increased due to the increase in the wall thickness of the container 1 in the radially inward direction of the container 1, so that a solubility of oxygen can be increased, thereby increasing an oxygen content in the silicon melt 2 and further increasing an oxygen content of the grown single-silicon crystal.
In the process of growing single-crystal silicon by using this growth apparatus, since container 1 is a silicon dioxide piece, silicon dioxide in the inner wall of container 1 is decomposed into oxygen atoms and silicon atoms under a high-temperature environment, and the oxygen atoms located on the inner wall of container 1 are taken into silicon melt 2 by the action of the eddy current in container 1, so that the oxygen content in silicon melt 2 can be increased. In addition, at the taylor-prodeman vortex 22, the taylor-prodeman vortex 22 scours and collides with the inner wall of the container 1, so that oxygen atoms on the inner wall of the container 1 rise under the action of the taylor-prodeman vortex 22 and are brought into the silicon melt 2, and the oxygen atoms can be brought to the solid-liquid interface between the ingot and the silicon melt 2 by the continued rising action of the taylor-prodeman vortex 22, so that the oxygen content in the ingot can be increased, and further the oxygen content of the grown single crystal silicon can be increased.
Since the wall thickness of container 1 of the single-crystal silicon growth apparatus of the present application is increased in the radially inward direction of container 1, and thus the wall thickness of the bottom wall of container 1 and the portion adjacent to the bottom wall of container 1 is made larger, the heat retaining effect of container 1 can be enhanced, so that the temperature of the portion of silicon melt 2 in container 1 adjacent to the bottom of container 1 is made higher, so that the oxygen solubility of this portion of silicon melt 2 is increased, and so that oxygen on the inner wall of container 1 is more dissolved into this portion of silicon melt 2. Since the portion of the silicon melt 2 containing high oxygen is adjacent to the bottom of the container 1 and the taylor-prodhman vortex 22 is also adjacent to the bottom of the container 1, the portion of the silicon melt 2 containing high oxygen can rise to the solid-liquid interface between the ingot and the silicon melt 2 under the action of the taylor-prodhman vortex 22, so that the oxygen content in the ingot can be increased, and the oxygen content of the grown silicon single crystal can be increased.
In addition, during the ingot growth, the amount of silicon melt 2 in container 1 gradually decreases, and the contact area between silicon melt 2 and the inner wall of container 1 also gradually decreases, so that the amount of oxygen atoms on the inner wall of container 1 that can enter silicon melt 2 also decreases. Because the temperature of the container 1 adjacent to or at the taylor-prodeman vortex 22 is higher, the oxygen content in the silicon melt 2 adjacent to or at the taylor-prodeman vortex 22 is higher, so that the oxygen content at the tail of the crystal rod can be increased, the problem of lower oxygen content at the tail of the crystal rod can be solved, and the whole oxygen content distribution of the grown monocrystalline silicon is more uniform.
According to the single-silicon-crystal growing method of the embodiment of the present invention, by using container 1 having an increased wall thickness in the radially inward direction as container 1 containing silicon melt 2, during the growth of single-silicon crystal, the temperature of silicon melt 2 in container 1 adjacent to the bottom of container 1 increases due to the increased wall thickness of container 1 in the radially inward direction of container 1, so that the oxygen content in silicon melt 2 increases.
According to some embodiments of the present invention, the location of maximum wall thickness of vessel 1 is adjacent to Taylor-Prudman vortex 22 of silicon melt 2. The silicon melt 2 at the maximum wall thickness of the container 1 has a better heat preservation effect, so the temperature is higher, thereby more oxygen can be precipitated at the maximum wall thickness of the inner wall of the container 1, and because the maximum wall thickness of the container 1 is adjacent to the taylor-prodeman vortex 22 of the silicon melt 2, more oxygen precipitated at the maximum wall thickness of the container 1 can be brought upwards to the solid-liquid interface of the crystal bar and the silicon melt 2 by the taylor-prodeman vortex 22, thereby the oxygen content of the produced single crystal silicon can be better improved.
According to some embodiments of the present invention, the internal surface area of container 1 at taylor-prodeman vortex 22 of silicon melt 2 is increased. Therefore, the contact area of the container 1 and the Taylor-Prademan vortex 22 can be increased, so that the Taylor-Prademan vortex 22 can bring more oxygen atoms on the inner wall of the container 1 into the silicon melt 2, and continuously rise and are brought into the solid-liquid interface between the silicon melt 2 and the crystal bar, thereby increasing the oxygen content of the crystal bar, and increasing the oxygen content of the grown monocrystalline silicon. Moreover, the oxygen content at the tail of the crystal bar can be further improved, the problem that the oxygen content at the tail of the crystal bar is low is further solved, and the whole oxygen content distribution of the grown monocrystalline silicon is more uniform.
Alternatively, the portion of the inner wall of container 1 located at taylor-prodeman vortex 22 of silicon melt 2 is formed with a rugged structure. Thereby, the inner surface area of container 1 at taylor-prodeman vortex 22 of silicon melt 2 can be increased.
Optionally, the container 1 comprises a container body 14 and an oxygen increasing piece 15 detachably arranged on the inner wall of the container body 14, wherein the oxygen increasing piece 15 is a silicon dioxide piece, and the inner surface area of the container 1 at the Taylor-Prudman vortex 22 of the silicon melt 2 can be increased through the oxygen increasing piece 15. After the oxygen increasing member 15 is disposed on the inner wall of the container body 14, the inner wall of the container 1 is made to have a rugged structure. Wherein, the oxygen increasing piece 15 can be in a step structure or the surface of the oxygen increasing piece 15 is in a particle structure, thereby further increasing the inner surface area of the container 1. Therefore, the container 1 is arranged to comprise the container body 14 and the oxygen increasing piece 15 which are detachably connected, the oxygen increasing piece 15 with different shapes and structures can be installed in the container body 14 according to needs, the effect of increasing the inner surface area of the container 1 in different degrees is achieved, and the material cost is reduced.
According to some embodiments of the present invention, the rotation speed (crucible rotation) of the container 1 is not less than 5RPM, the rotation speed (crystal rotation) of the boule in the container 1 is not less than 1RPM, and the rotation direction of the container 1 is opposite to the rotation direction of the boule. A certain number of crucible rotations (which are the rotation of the ingot and the rotation of the container 1) form the taylor-prodeman vortex 22, and generally, the downward region of the taylor-prodeman vortex 22 inhibits the path of oxygen precipitated from the inner wall of the container 1 from dissolving and then moving upward to the solid-liquid interface, whereas the upward region of the taylor-prodeman vortex 22 brings the precipitated oxygen into the solid-liquid interface, so that the upward region of the taylor-prodeman vortex 22 is a main oxygen enrichment region (see fig. 4). According to the invention, the distribution of the region from the center to the rise of the Taylor-Prudman vortex 22 is obtained through simulation calculation, and the thickness of the inner wall of the container 1 is increased or a step-shaped structure or a concave-convex structure is formed at the position, so that the increased oxygen content can enter the crystal bar more, and the oxygen content of the crystal bar can be effectively increased.
Referring to FIG. 9, FIG. 9 is a comparison of vortex patterns of silicon melt 2 in vessel 1 for the same ingot rotation speed and different vessel 1 rotation speeds, wherein S10 represents the ingot rotation speed of 10RPM, C-1 represents the vessel 1 rotation speed of 1RPM and the vessel 1 rotation direction is opposite to the ingot rotation direction, C-5 represents the vessel 1 rotation speed of 5RPM and the vessel 1 rotation direction is opposite to the ingot rotation direction, and C-10 represents the vessel 1 rotation speed of 10RPM and the vessel 1 rotation direction is opposite to the ingot rotation direction.
As can be seen, when the rotation speed of the vessel 1 is 1RPM (see the first diagram in fig. 9), the complete taylor-prodeman vortex 22 is not formed in the vessel 1, and the region below the taylor-prodeman vortex 22 significantly suppresses the path of oxygen precipitated from the inner wall of the vessel 1, which is dissolved and then moves up to the solid-liquid interface, so that the precipitated oxygen is not favorably introduced into the solid-liquid interface, and the oxygen content of the ingot is not favorably increased. When the rotating speed of the container 1 is 5RPM (refer to the second graph in FIG. 9), a complete Taylor-Prudman vortex 22 is formed in the container 1, and the area below the Taylor-Prudman vortex 22 is obviously reduced, so that the precipitated oxygen can enter a solid-liquid interface, and the oxygen content of the crystal bar can be increased. When the rotating speed of the container 1 is 10RPM (refer to the third graph in fig. 9), a complete taylor-prodeman vortex 22 is formed in the container 1, the area below the taylor-prodeman vortex 22 is obviously reduced, and when the rotating speed of the container 1 is 5RPM, the center of the taylor-prodeman vortex 22 is closer to the solid-liquid interface, so that more oxygen can be brought to the solid-liquid interface through the taylor-prodeman vortex 22, and the oxygen content in the crystal rod can be improved.
Referring to FIG. 10, FIG. 10 is a comparison of eddy current profiles of silicon melt 2 in vessel 1 for the same ingot rotation speed and different vessel 1 rotation speeds, wherein S2 represents the ingot rotation speed of 2RPM, S5 represents the ingot rotation speed of 5RPM, S10 represents the ingot rotation speed of 10RPM, and C-5 represents the vessel 1 rotation speed of 5RPM with the direction of rotation of the vessel 1 being opposite to the direction of rotation of the ingot. At a rotation speed of 2RPM of the ingot (refer to the first drawing in fig. 10), a complete taylor-prodeman vortex 22 is formed in the container 1. Of course, when the rotation speed of the ingot is 5RPM (see the second drawing in fig. 10) and when the rotation speed of the ingot is 10RPM (see the third drawing in fig. 10), the complete taylor-prodeman vortex 22 is formed in the container 1.
As is clear from the above, the influence of the rotational speed of the container 1 on the taylor-prodeman vortex 22 is significantly larger than the influence of the rotational speed of the ingot on the taylor-prodeman vortex 22.
According to the silicon single crystal growing method of the embodiment of the third aspect of the present invention, the silicon single crystal growing apparatus includes the container 1, the container 1 is a silicon dioxide piece, the container 1 defines the containing cavity 11 for containing the silicon melt 2 therein, the inner surface area of the container 1 at the taylor-prodeman vortex 22 of the silicon melt 2 is increased, thereby the area of the container 1 in contact with the taylor-prodeman vortex 22 can be increased, so that the taylor-prodeman vortex 22 can bring more oxygen atoms on the inner wall of the container 1 into the silicon melt 2, thereby the oxygen content in the silicon melt 2 is increased, the oxygen atoms rise to the interface of the silicon melt 2 and the crystal bar by the action of the taylor-prodeman vortex 22, thereby the oxygen content of the crystal bar is increased, and the oxygen content of the grown silicon single crystal can be increased. Moreover, the oxygen content at the tail of the crystal bar can be further improved, the problem that the oxygen content at the tail of the crystal bar is low is further solved, and the whole oxygen content distribution of the grown monocrystalline silicon is more uniform.
According to the single-crystal silicon growth method of the embodiment of the present invention, by increasing the inner surface area of container 1 at taylor-prodermann vortex 22 of silicon melt 2, the contact area of silicon melt 2 in container 1 with the inner wall of container 1 can be increased, so that more oxygen decomposed on the inner wall of container 1 can enter the melt through the vortex, so that the oxygen content in silicon melt 2 is increased, and the oxygen content of the grown single-crystal silicon can be increased.
According to some embodiments of the present invention, the portion of the inner wall of the container 1 located at the taylor-prodeman vortex 22 is formed with a rugged structure, which is a stepped structure or a granular structure. Therefore, by forming the rugged structure at the position where the inner wall of the container is adjacent to the taylor-prodeman vortex 22 of the silicon melt 2, the inner surface area of the inner wall of the container 1 adjacent to the taylor-prodeman vortex 22 can be increased, so that more oxygen can be precipitated at the position where the inner wall of the container 1 is adjacent to the taylor-prodeman vortex 22, and the precipitated oxygen can rise to the interface between the ingot and the silicon melt 2 under the action of the taylor-prodeman vortex 22, so that the oxygen content in the ingot can be increased, and further, the oxygen content of the grown silicon single crystal can be increased. Moreover, the uneven structure is a step-shaped structure or a granular structure, so that the inner surface area of the inner wall of the container 1 adjacent to the taylor-prodeman vortex 22 can be obviously increased, and the uneven structure is convenient to process and form.
According to some embodiments of the present invention, container 1 comprises container body 14 and oxygen increasing member 15 detachably disposed on an inner wall of container body 14, oxygen increasing member 15 is a silica member, and inner surface area of container 1 at taylor-prodeman vortex 22 of silicon melt 2 can be increased by oxygen increasing member 15. After the oxygen increasing member 15 is disposed on the inner wall of the container body 14, the inner wall of the container 1 is made to have a rugged structure. Wherein, the oxygen increasing piece 15 can be in a step structure or the surface of the oxygen increasing piece 15 is in a particle structure, thereby further increasing the inner surface area of the container 1. Therefore, the container 1 is arranged to comprise the container body 14 and the oxygen increasing piece 15 which are detachably connected, the oxygen increasing piece 15 with different shapes and structures can be installed in the container body 14 according to needs, the effect of increasing the inner surface area of the container 1 in different degrees is achieved, and the material cost is reduced.
Referring to FIGS. 5-8, wherein FIG. 5 is a schematic illustration of an oxygen distribution of a silicon melt within a single crystal silicon growth apparatus utilizing a related art technique; FIG. 6 is a schematic view showing an oxygen distribution of a silicon melt in vessel 1 utilizing a single-crystal silicon growth method according to an embodiment of the third aspect of the present invention, wherein the inner wall of vessel 1 is formed with a rugged structure, which is a granular structure, at a position adjacent to Taylor-Prademann vortex 22 of silicon melt 2; FIG. 7 is a schematic view of the oxygen distribution of the silicon melt in vessel 1 utilizing the silicon single crystal growth method according to the embodiment of the second aspect of the present invention, wherein the inner wall of vessel 1 is formed with a rugged structure, which is a stepped structure, at a position adjacent to Taylor-Prudman vortex 22 of silicon melt 2; FIG. 8 is a comparison graph of oxygen distribution of the ingot of FIGS. 5, 6, and 7 in the radial direction from the center to the edge at the same time, wherein 01 of FIG. 8 represents an oxygen distribution profile of the ingot of FIG. 5 in the radial direction from the center to the edge, 02 of FIG. 8 represents an oxygen distribution profile of the ingot of FIG. 6 in the radial direction from the center to the edge, and 03 of FIG. 8 represents an oxygen distribution profile of the ingot of FIG. 7 in the radial direction from the center to the edge. Wherein the crucible rotation parameter in fig. 5, 6 and 7 is S12C-5, that is, the rotation speed of the boule is 12RPM, the rotation speed of the container 1 is 5RPM, and the rotation direction of the boule is opposite to the rotation direction of the container 1.
As can be seen from fig. 5 to 8, by setting the crucible rotation parameter to S12C-5 and by forming the granular concave-convex structure at the position of the inner wall of the container 1 adjacent to the taylor-prodeman vortex 22 of the silicon melt 2, the oxygen content of the grown single-crystal silicon can be increased, and particularly, the oxygen content at the tail of the ingot can be greatly increased, so that the overall oxygen content distribution of the grown single-crystal silicon is relatively uniform. By setting the crucible rotation parameter to S12C-5 and by making the container 1 in the radially inward direction of the container 1, the wall thickness of the container 1 increases, and the inner wall of the container 1 forms a stepped concave-convex structure at a position adjacent to the taylor-prodeman vortex 22 of the silicon melt 2, the oxygen content of the grown single crystal silicon can be increased, the oxygen content at the tail of the crystal rod can be increased, the problem that the oxygen content at the tail of the crystal rod is lower is improved, and the overall oxygen content distribution of the grown single crystal silicon is more uniform.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (18)
1. A single crystal silicon growth apparatus, comprising: a container, the container being a silica piece, the container defining a containing cavity therein for containing a silicon melt, the container having a wall thickness that increases in a radially inward direction of the container such that an oxygen content within the silicon melt increases.
2. The single crystal silicon growth apparatus of claim 1, wherein the wall thickness of the container increases stepwise in a direction radially inward of the container.
3. The single crystal silicon growth apparatus of claim 2, wherein the inner wall of the container is in a stepped configuration in a radially inward direction of the container; and/or, in a direction radially inward of the container, the outer wall of the container is stepped.
4. The single crystal silicon growth apparatus of claim 3, wherein the inner wall of the vessel is stepped in a direction radially inward of the vessel, at least a portion of the stepped structure being located at a bottom wall of the vessel or at least a portion adjacent to a Taylor-Prudman vortex of the silicon melt.
5. The single crystal silicon growth apparatus of claim 3, wherein the inner wall of the container has a stepped structure in a radially inward direction of the container, the stepped structure including stepped surfaces extending inward substantially in a wall thickness direction of the container, the stepped surfaces extending in a circumferential direction of the container, and distances between adjacent two of the stepped surfaces are sequentially decreased in the radially inward direction of the container.
6. The single crystal silicon growth apparatus of claim 1, wherein the container comprises a plurality of sub-containers stacked in a thickness direction of the container, and a stepped structure is defined between adjacent two sub-containers.
7. The single-crystal silicon growth apparatus of claim 1, wherein the inner wall of the container is formed with a rugged structure at a position adjacent to a taylor-prodeman vortex of the silicon melt, the rugged structure being a stepped structure or a granular structure.
8. The single crystal silicon growing apparatus of claim 1, wherein the container comprises a container body and an oxygen increasing member detachably disposed on an inner wall of the container body, the oxygen increasing member is a silicon dioxide member, and the oxygen increasing member is disposed on the inner wall of the container body to increase an inner surface area of the container.
9. The single crystal silicon growth apparatus of any one of claims 1-8, wherein the location of maximum wall thickness of the vessel is adjacent to a Taylor-Prudman vortex of the silicon melt.
10. A single-silicon-crystal growing method characterized in that a single-silicon-crystal growing apparatus for growing single-silicon crystal comprises a container, the container being a silicon dioxide piece, a containing chamber for containing a silicon melt being defined in the container, a wall thickness of the container increasing in a radially inward direction of the container, single-silicon crystal being grown from the silicon melt in the containing chamber during rotation of the container, a temperature of the silicon melt adjacent to a bottom of the container in the container increasing due to the wall thickness of the container increasing in the radially inward direction of the container, so that an oxygen content in the silicon melt increases.
11. The single crystal silicon growth method of claim 10, wherein the location of maximum wall thickness of the vessel is adjacent to a taylor-prodeman vortex of the silicon melt.
12. The single crystal silicon growth method of claim 10, wherein an internal surface area of the vessel at a taylor-prodeman vortex of the silicon melt is increased.
13. The single-crystal silicon growth method according to claim 12, wherein a portion of the inner wall of the container, which is located at the taylor-prodeman vortex of the silicon melt, is formed with a rugged structure.
14. The single crystal silicon growth method of claim 12, wherein the container includes a container body and an oxygen increasing member detachably provided to an inner wall of the container body, the oxygen increasing member being a silicon dioxide member by which an inner surface area of the container at the taylor-prodeman vortex of the silicon melt is increased.
15. The method of claim 10 wherein the container rotates at a speed of no less than 5RPM, the ingot within the container rotates at a speed of no less than 1RPM, and the container rotates in a direction opposite to the direction of rotation of the ingot.
16. A single silicon crystal growing method is characterized in that a single silicon crystal growing apparatus comprises a container, wherein the container is a silicon dioxide piece, a containing cavity used for containing a silicon melt is defined in the container, and the inner surface area of the container positioned at the Taylor-Prudman vortex of the silicon melt is increased, so that the oxygen content in the silicon melt is increased.
17. The single-crystal silicon growth method according to claim 16, wherein a portion of the inner wall of the container, which is located at the taylor-prodeman vortex, is formed with a rugged structure, and the rugged structure is a stepped structure or a granular structure.
18. The single crystal silicon growth method of claim 16, wherein the container includes a container body and an oxygen increasing member detachably provided to an inner wall of the container body, the oxygen increasing member being a silicon dioxide member by which an inner surface area of the container at the taylor-prodeman vortex of the silicon melt is increased.
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| US7335256B2 (en) * | 2002-12-19 | 2008-02-26 | Siltronic Ag | Silicon single crystal, and process for producing it |
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| CN1540042A (en) * | 2003-03-27 | 2004-10-27 | �����ɷ� | Method and device for prodn. of silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributions |
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