CN111386441B - 用于半导体芯片表面形貌计量的系统 - Google Patents
用于半导体芯片表面形貌计量的系统 Download PDFInfo
- Publication number
- CN111386441B CN111386441B CN202080000444.9A CN202080000444A CN111386441B CN 111386441 B CN111386441 B CN 111386441B CN 202080000444 A CN202080000444 A CN 202080000444A CN 111386441 B CN111386441 B CN 111386441B
- Authority
- CN
- China
- Prior art keywords
- semiconductor chip
- interference
- light source
- spectrum
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02015—Interferometers characterised by the beam path configuration
- G01B9/02029—Combination with non-interferometric systems, i.e. for measuring the object
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02041—Interferometers characterised by particular imaging or detection techniques
- G01B9/02044—Imaging in the frequency domain, e.g. by using a spectrometer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0608—Height gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
- G01B11/306—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces for measuring evenness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02055—Reduction or prevention of errors; Testing; Calibration
- G01B9/02056—Passive reduction of errors
- G01B9/02057—Passive reduction of errors by using common path configuration, i.e. reference and object path almost entirely overlapping
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02055—Reduction or prevention of errors; Testing; Calibration
- G01B9/0207—Error reduction by correction of the measurement signal based on independently determined error sources, e.g. using a reference interferometer
- G01B9/02072—Error reduction by correction of the measurement signal based on independently determined error sources, e.g. using a reference interferometer by calibration or testing of interferometer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02055—Reduction or prevention of errors; Testing; Calibration
- G01B9/0207—Error reduction by correction of the measurement signal based on independently determined error sources, e.g. using a reference interferometer
- G01B9/02072—Error reduction by correction of the measurement signal based on independently determined error sources, e.g. using a reference interferometer by calibration or testing of interferometer
- G01B9/02074—Error reduction by correction of the measurement signal based on independently determined error sources, e.g. using a reference interferometer by calibration or testing of interferometer of the detector
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02055—Reduction or prevention of errors; Testing; Calibration
- G01B9/02075—Reduction or prevention of errors; Testing; Calibration of particular errors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02083—Interferometers characterised by particular signal processing and presentation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02083—Interferometers characterised by particular signal processing and presentation
- G01B9/02084—Processing in the Fourier or frequency domain when not imaged in the frequency domain
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/0209—Low-coherence interferometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95684—Patterns showing highly reflecting parts, e.g. metallic elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2020/076430 WO2021168610A1 (fr) | 2020-02-24 | 2020-02-24 | Systèmes ayant une source de lumière à spectre étendu pour métrologie de topographie de surface de puce à semi-conducteurs |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111386441A CN111386441A (zh) | 2020-07-07 |
CN111386441B true CN111386441B (zh) | 2021-02-19 |
Family
ID=71219151
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202080000444.9A Active CN111386441B (zh) | 2020-02-24 | 2020-02-24 | 用于半导体芯片表面形貌计量的系统 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11454491B2 (fr) |
CN (1) | CN111386441B (fr) |
TW (1) | TWI772778B (fr) |
WO (1) | WO2021168610A1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111356897B (zh) | 2020-02-24 | 2021-02-19 | 长江存储科技有限责任公司 | 用于半导体芯片表面形貌计量的系统和方法 |
CN111406198B (zh) * | 2020-02-24 | 2021-02-19 | 长江存储科技有限责任公司 | 用于半导体芯片表面形貌计量的系统和方法 |
CN111356896B (zh) | 2020-02-24 | 2021-01-12 | 长江存储科技有限责任公司 | 用于半导体芯片表面形貌计量的系统和方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006170847A (ja) * | 2004-12-16 | 2006-06-29 | Canon Inc | 形状と材質の測定方法 |
CN108844492A (zh) * | 2018-08-31 | 2018-11-20 | 苏州大学 | 一种基于光谱调制度深度编码的微结构形貌测量方法及其装置 |
CN109073355A (zh) * | 2016-04-11 | 2018-12-21 | 统半导体公司 | 用于光学检查和测量物体表面的方法和系统 |
CN109932708A (zh) * | 2019-03-25 | 2019-06-25 | 西北工业大学 | 一种基于干涉条纹和深度学习的水面水下分类目标的方法 |
CN110301038A (zh) * | 2017-01-05 | 2019-10-01 | 科磊股份有限公司 | 用于缺陷材料分类的系统及方法 |
Family Cites Families (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8608288D0 (en) | 1986-04-04 | 1986-05-08 | Pa Consulting Services | Noise compensation in speech recognition |
JP3852557B2 (ja) | 2000-09-08 | 2006-11-29 | オムロン株式会社 | 膜厚測定方法およびその方法を用いた膜厚センサ |
US7557929B2 (en) * | 2001-12-18 | 2009-07-07 | Massachusetts Institute Of Technology | Systems and methods for phase measurements |
JP4791354B2 (ja) | 2003-03-06 | 2011-10-12 | ザイゴ コーポレーション | 走査干渉分光を用いた複雑な表面構造のプロファイリング |
US7324214B2 (en) * | 2003-03-06 | 2008-01-29 | Zygo Corporation | Interferometer and method for measuring characteristics of optically unresolved surface features |
US7289225B2 (en) * | 2003-09-15 | 2007-10-30 | Zygo Corporation | Surface profiling using an interference pattern matching template |
JP4133753B2 (ja) | 2003-11-11 | 2008-08-13 | フジノン株式会社 | 迂曲面の光波干渉測定方法および迂曲面測定用の干渉計装置 |
GB0502677D0 (en) | 2005-02-09 | 2005-03-16 | Taylor Hobson Ltd | Apparatus for and a method of determining a surface characteristic |
TWI394930B (zh) * | 2005-05-19 | 2013-05-01 | Zygo Corp | 取得薄膜結構資訊之低同調干涉信號的分析方法及裝置 |
US7602501B2 (en) | 2006-07-10 | 2009-10-13 | The Board Of Trustees Of The University Of Illinois | Interferometric synthetic aperture microscopy |
TWI452617B (zh) * | 2006-07-26 | 2014-09-11 | Freiberger Compound Mat Gmbh | 平滑化第三族氮化物基材之方法 |
US20080080670A1 (en) | 2006-09-29 | 2008-04-03 | Ge Security, Inc. | Systems and methods for classifying a substance |
DE102007018048A1 (de) | 2007-04-13 | 2008-10-16 | Michael Schwertner | Verfahren und Anordnung zur optischen Abbildung mit Tiefendiskriminierung |
EP2232195B1 (fr) | 2007-12-14 | 2015-03-18 | Zygo Corporation | Analyse de la structure de surface à l'aide de l'interférométrie à balayage |
US20100316150A1 (en) | 2009-06-05 | 2010-12-16 | Broadcom Corporation | Mixed mode operations within multiple user, multiple access, and/or MIMO wireless communications |
WO2012044300A1 (fr) | 2010-09-30 | 2012-04-05 | Empire Technology Development Llc | Projection de motifs pour une extraction de texture haute résolution |
EP2482031A1 (fr) | 2011-01-26 | 2012-08-01 | Mitutoyo Research Center Europe B.V. | Procédé et appareil d'exécution des mesures d'épaisseur de film à l'aide d'une interférométrie lumineuse blanche |
DE102011051146B3 (de) * | 2011-06-17 | 2012-10-04 | Precitec Optronik Gmbh | Prüfverfahren zum Prüfen einer Verbindungsschicht zwischen waferförmigen Proben |
US9810643B1 (en) | 2012-09-25 | 2017-11-07 | Applied Materials Israel Ltd. | System and method for defect detection using multi-spot scanning |
US10219163B2 (en) | 2013-03-15 | 2019-02-26 | DGS Global Systems, Inc. | Systems, methods, and devices for electronic spectrum management |
CN103267494B (zh) | 2013-05-20 | 2015-11-04 | 湖北工业大学 | 一种表面形貌干涉测量的方法及装置 |
FR3006048A1 (fr) | 2013-05-24 | 2014-11-28 | Commissariat Energie Atomique | Procede de caracterisation de la topographie d'une surface |
US10935893B2 (en) | 2013-08-11 | 2021-03-02 | Kla-Tencor Corporation | Differential methods and apparatus for metrology of semiconductor targets |
US9494410B2 (en) | 2013-12-05 | 2016-11-15 | National Taiwan University | Method for measuring characteristics of sample |
CN105900016B (zh) | 2013-12-05 | 2018-02-13 | Asml荷兰有限公司 | 用于测量衬底上的结构的方法和设备、用于误差校正的模型、用于实施这样的方法和设备的计算机程序产品 |
US9490182B2 (en) * | 2013-12-23 | 2016-11-08 | Kla-Tencor Corporation | Measurement of multiple patterning parameters |
US9389064B2 (en) | 2014-03-28 | 2016-07-12 | Intel Corporation | Inline inspection of the contact between conductive traces and substrate for hidden defects using white light interferometer with tilted objective lens |
JP6269334B2 (ja) | 2014-06-12 | 2018-01-31 | 株式会社東京精密 | 多点距離測定装置及び形状測定装置 |
US10215559B2 (en) | 2014-10-16 | 2019-02-26 | Kla-Tencor Corporation | Metrology of multiple patterning processes |
CN105632956B (zh) | 2014-11-07 | 2018-04-06 | 中国科学院微电子研究所 | 一种化学机械抛光后芯片表面形貌评测方法及系统 |
KR101653908B1 (ko) | 2015-02-25 | 2016-09-02 | 부경대학교 산학협력단 | 광섬유 압력 센서 및 이를 이용한 압력 측정방법 |
US9915524B2 (en) | 2015-05-11 | 2018-03-13 | Kla-Tencor Corporation | Optical metrology with small illumination spot size |
US10495446B2 (en) | 2015-06-29 | 2019-12-03 | Kla-Tencor Corporation | Methods and apparatus for measuring height on a semiconductor wafer |
US10488184B2 (en) | 2015-07-13 | 2019-11-26 | Nanometrics Incorporated | Interferometric characterization of surface topography |
JP6553967B2 (ja) | 2015-07-14 | 2019-07-31 | 株式会社ミツトヨ | 瞬時位相シフト干渉計 |
CN105526874B (zh) | 2015-12-03 | 2019-09-20 | 重庆三峡学院 | 一种基于光谱特征参数的油膜厚度识别方法 |
CN108700816A (zh) * | 2015-12-17 | 2018-10-23 | Asml荷兰有限公司 | 散射测量中的偏振调谐 |
CN105674911A (zh) | 2016-01-27 | 2016-06-15 | 淮安普瑞精仪科技有限公司 | 非接触式微纳三维测量方法及其装置 |
KR20230135690A (ko) | 2016-10-04 | 2023-09-25 | 케이엘에이 코포레이션 | 반도체 디바이스 제조 중 분광 측정의 촉진 |
JP2018124184A (ja) | 2017-02-01 | 2018-08-09 | 株式会社豊田自動織機 | ハーネス認識装置、及びハーネス認識方法 |
CN107144235A (zh) | 2017-05-03 | 2017-09-08 | 佛山科学技术学院 | 一种物品表面形貌检测方法及装置 |
US11131629B2 (en) * | 2017-05-26 | 2021-09-28 | Kla-Tencor Corporation | Apparatus and methods for measuring phase and amplitude of light through a layer |
WO2019011608A1 (fr) | 2017-07-13 | 2019-01-17 | Asml Netherlands B.V. | Outil d'inspection, appareil lithographique, système lithographique, procédé d'inspection et procédé de fabrication de dispositif |
CN109387155B (zh) | 2017-08-10 | 2020-09-22 | 上海微电子装备(集团)股份有限公司 | 形貌检测装置与形貌检测方法 |
EP3477252A1 (fr) | 2017-10-25 | 2019-05-01 | Unity Semiconductor GmbH | Dispositif de détection de profil de surface d'une surface d'objet par mesure de distance par interférométrie |
CN108061529B (zh) | 2018-02-23 | 2020-03-31 | 西南科技大学 | 基于干涉图像自相关值曲率特征的表面粗糙度测量方法 |
TWI794416B (zh) * | 2018-02-28 | 2023-03-01 | 美商賽格股份有限公司 | 多層堆疊結構之計量方法及干涉儀系統 |
EP3540514A1 (fr) | 2018-03-13 | 2019-09-18 | ASML Netherlands B.V. | Outil d'inspection, appareil lithographique et procédé d'inspection |
US11619886B2 (en) * | 2018-03-29 | 2023-04-04 | Asml Netherlands B.V. | Position measurement system, interferometer system and lithographic apparatus |
CN108875072B (zh) | 2018-07-05 | 2022-01-14 | 第四范式(北京)技术有限公司 | 文本分类方法、装置、设备以及存储介质 |
CN109373918B (zh) | 2018-12-18 | 2020-08-28 | 哈尔滨工业大学 | 一种用于二维材料薄膜厚度测量的高效光学测量方法 |
CN109781633A (zh) * | 2019-03-13 | 2019-05-21 | 山东大学 | 一种可获得光谱信息的白光显微干涉测量系统及方法 |
CN109916330B (zh) | 2019-03-18 | 2021-02-23 | 长春理工大学 | 一种覆切削液的工件表面微观形貌测量装置及测量方法 |
CN110207609B (zh) | 2019-04-25 | 2021-03-23 | 合刃科技(武汉)有限公司 | 基于多种光谱的主动光的三维成像方法、装置及存储介质 |
CN110285771A (zh) * | 2019-05-15 | 2019-09-27 | 淮阴师范学院 | 基于白光干涉的嵌入式三维形貌测量模块 |
CN110260814B (zh) | 2019-06-13 | 2020-12-11 | 大连理工大学 | 一种白光扫描干涉测量法高频形貌补偿方法 |
CN110487205B (zh) | 2019-07-31 | 2020-10-13 | 北京理工大学 | 结合色散共焦定位的非球面参数误差干涉测量方法 |
CN110686166B (zh) | 2019-10-21 | 2021-11-05 | 上海大学 | Sagnac分布光纤传感系统的离散化定位方法 |
CN110779464B (zh) | 2019-11-18 | 2021-06-18 | 重庆邮电大学 | 一种时域频域联合分析宽光谱相干测量方法及系统 |
CN111356896B (zh) * | 2020-02-24 | 2021-01-12 | 长江存储科技有限责任公司 | 用于半导体芯片表面形貌计量的系统和方法 |
CN111406198B (zh) * | 2020-02-24 | 2021-02-19 | 长江存储科技有限责任公司 | 用于半导体芯片表面形貌计量的系统和方法 |
CN111356897B (zh) * | 2020-02-24 | 2021-02-19 | 长江存储科技有限责任公司 | 用于半导体芯片表面形貌计量的系统和方法 |
-
2020
- 2020-02-24 CN CN202080000444.9A patent/CN111386441B/zh active Active
- 2020-02-24 WO PCT/CN2020/076430 patent/WO2021168610A1/fr active Application Filing
- 2020-04-14 TW TW109112467A patent/TWI772778B/zh active
- 2020-06-24 US US16/910,676 patent/US11454491B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006170847A (ja) * | 2004-12-16 | 2006-06-29 | Canon Inc | 形状と材質の測定方法 |
CN109073355A (zh) * | 2016-04-11 | 2018-12-21 | 统半导体公司 | 用于光学检查和测量物体表面的方法和系统 |
CN110301038A (zh) * | 2017-01-05 | 2019-10-01 | 科磊股份有限公司 | 用于缺陷材料分类的系统及方法 |
CN108844492A (zh) * | 2018-08-31 | 2018-11-20 | 苏州大学 | 一种基于光谱调制度深度编码的微结构形貌测量方法及其装置 |
CN109932708A (zh) * | 2019-03-25 | 2019-06-25 | 西北工业大学 | 一种基于干涉条纹和深度学习的水面水下分类目标的方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2021168610A1 (fr) | 2021-09-02 |
TW202133290A (zh) | 2021-09-01 |
US20210262778A1 (en) | 2021-08-26 |
TWI772778B (zh) | 2022-08-01 |
CN111386441A (zh) | 2020-07-07 |
US11454491B2 (en) | 2022-09-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN111356896B (zh) | 用于半导体芯片表面形貌计量的系统和方法 | |
CN111406198B (zh) | 用于半导体芯片表面形貌计量的系统和方法 | |
CN111356897B (zh) | 用于半导体芯片表面形貌计量的系统和方法 | |
CN111386441B (zh) | 用于半导体芯片表面形貌计量的系统 | |
US10937705B2 (en) | Sample inspection using topography | |
US10438825B2 (en) | Spectral reflectometry for in-situ process monitoring and control | |
US7177030B2 (en) | Determination of thin film topography | |
US9305341B2 (en) | System and method for measurement of through silicon structures | |
KR20090097938A (ko) | 표면 특징물의 특성을 측정하기 위한 장치 및 방법 | |
US20140132948A1 (en) | Apparatus and Method for Optical Metrology with Optimized System Parameters | |
WO2008094753A2 (fr) | Interférométrie pour métrologie latérale | |
IL284123B (en) | Semiconductor metrology is based on hyperspectral imaging | |
US7430898B1 (en) | Methods and systems for analyzing a specimen using atomic force microscopy profiling in combination with an optical technique | |
CN112384749B (zh) | 用于半导体芯片孔几何形状度量的系统和方法 | |
Wang et al. | VIA dishing metrology for novel 3D NAND using neural network assisted white light interferometry | |
Yang | Metrology and Inspection Equipment | |
Xin et al. | A white-light interferometry method for 3D measurement of compactly spaced micro-nano structural units |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |