CN111384184A - 一种太阳能电池的电极制备方法 - Google Patents
一种太阳能电池的电极制备方法 Download PDFInfo
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- CN111384184A CN111384184A CN201811611556.9A CN201811611556A CN111384184A CN 111384184 A CN111384184 A CN 111384184A CN 201811611556 A CN201811611556 A CN 201811611556A CN 111384184 A CN111384184 A CN 111384184A
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- electrode
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- solar cell
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- 238000002360 preparation method Methods 0.000 title abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000001020 plasma etching Methods 0.000 claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 20
- 238000005240 physical vapour deposition Methods 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 7
- 230000005684 electric field Effects 0.000 claims description 4
- 230000031700 light absorption Effects 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 238000010329 laser etching Methods 0.000 abstract description 3
- 238000010248 power generation Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811611556.9A CN111384184A (zh) | 2018-12-27 | 2018-12-27 | 一种太阳能电池的电极制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811611556.9A CN111384184A (zh) | 2018-12-27 | 2018-12-27 | 一种太阳能电池的电极制备方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN111384184A true CN111384184A (zh) | 2020-07-07 |
Family
ID=71222376
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811611556.9A Pending CN111384184A (zh) | 2018-12-27 | 2018-12-27 | 一种太阳能电池的电极制备方法 |
Country Status (1)
Country | Link |
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CN (1) | CN111384184A (zh) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06132262A (ja) * | 1992-10-22 | 1994-05-13 | Hitachi Ltd | 薄膜のエッチング方法 |
KR20060100174A (ko) * | 2005-03-16 | 2006-09-20 | 한국과학기술원 | 집적형 박막 태양전지 및 그 제조 방법 |
CN101419890A (zh) * | 2008-12-04 | 2009-04-29 | 南京华显高科有限公司 | 一种荫罩式等离子体显示板金属电极的制备方法 |
CN102522323A (zh) * | 2011-12-28 | 2012-06-27 | 华南理工大学 | 一种ito图案化方法 |
CN102969393A (zh) * | 2012-10-19 | 2013-03-13 | 华南理工大学 | 一种基底上ito薄膜图案化方法 |
US20130125981A1 (en) * | 2011-01-24 | 2013-05-23 | Lg Innotek Co., Ltd. | Solar cell and manufacturing method thereof |
CN103972075A (zh) * | 2014-05-05 | 2014-08-06 | 京东方科技集团股份有限公司 | 一种刻蚀方法和阵列基板 |
KR20180102712A (ko) * | 2017-03-07 | 2018-09-18 | 희성전자 주식회사 | 패턴 구조의 투명전극 제조 방법 |
-
2018
- 2018-12-27 CN CN201811611556.9A patent/CN111384184A/zh active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06132262A (ja) * | 1992-10-22 | 1994-05-13 | Hitachi Ltd | 薄膜のエッチング方法 |
KR20060100174A (ko) * | 2005-03-16 | 2006-09-20 | 한국과학기술원 | 집적형 박막 태양전지 및 그 제조 방법 |
CN101419890A (zh) * | 2008-12-04 | 2009-04-29 | 南京华显高科有限公司 | 一种荫罩式等离子体显示板金属电极的制备方法 |
US20130125981A1 (en) * | 2011-01-24 | 2013-05-23 | Lg Innotek Co., Ltd. | Solar cell and manufacturing method thereof |
CN102522323A (zh) * | 2011-12-28 | 2012-06-27 | 华南理工大学 | 一种ito图案化方法 |
CN102969393A (zh) * | 2012-10-19 | 2013-03-13 | 华南理工大学 | 一种基底上ito薄膜图案化方法 |
CN103972075A (zh) * | 2014-05-05 | 2014-08-06 | 京东方科技集团股份有限公司 | 一种刻蚀方法和阵列基板 |
KR20180102712A (ko) * | 2017-03-07 | 2018-09-18 | 희성전자 주식회사 | 패턴 구조의 투명전극 제조 방법 |
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PB01 | Publication | ||
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CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: 100076 6015, 6th floor, building 8, 9 Yingshun Road, Yinghai Town, Daxing District, Beijing Applicant after: Beijing Dingrong Photovoltaic Technology Co.,Ltd. Address before: 100176 Beijing Daxing District Beijing economic and Technological Development Zone Rongchang East Street 7 hospital 6 Building 3001 room. Applicant before: BEIJING APOLLO DING RONG SOLAR TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20210415 Address after: 518066 Room 201, building A, No. 1, Qian Wan Road, Qianhai Shenzhen Hong Kong cooperation zone, Shenzhen, Guangdong (Shenzhen Qianhai business secretary Co., Ltd.) Applicant after: Shenzhen Zhengyue development and Construction Co.,Ltd. Address before: 100076 6015, 6th floor, building 8, 9 Yingshun Road, Yinghai Town, Daxing District, Beijing Applicant before: Beijing Dingrong Photovoltaic Technology Co.,Ltd. |
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Effective date of registration: 20210917 Address after: 201203 3rd floor, no.665 Zhangjiang Road, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai Applicant after: Shanghai zuqiang Energy Co.,Ltd. Address before: 518066 Room 201, building A, No. 1, Qian Wan Road, Qianhai Shenzhen Hong Kong cooperation zone, Shenzhen, Guangdong (Shenzhen Qianhai business secretary Co., Ltd.) Applicant before: Shenzhen Zhengyue development and Construction Co.,Ltd. |
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