CN111381453A - Euvl扫描仪 - Google Patents

Euvl扫描仪 Download PDF

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CN111381453A
CN111381453A CN201910693172.4A CN201910693172A CN111381453A CN 111381453 A CN111381453 A CN 111381453A CN 201910693172 A CN201910693172 A CN 201910693172A CN 111381453 A CN111381453 A CN 111381453A
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imaging system
reticle
cross
section
cone
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E·加拉赫
J-H·弗兰克
I·波兰迪亚
M·蒂默曼斯
M·马里亚诺朱斯特
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Katholieke Universiteit Leuven
Interuniversitair Microelektronica Centrum vzw IMEC
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Katholieke Universiteit Leuven
Interuniversitair Microelektronica Centrum vzw IMEC
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
    • D—TEXTILES; PAPER
    • D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
    • D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
    • D01F9/00—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments
    • D01F9/08—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments of inorganic material
    • D01F9/12—Carbon filaments; Apparatus specially adapted for the manufacture thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/08—Anamorphotic objectives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma

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Abstract

本发明涉及一种EUVL扫描仪(10)。该EUVL扫描仪包括：EUV光源(110)；掩膜版(120)；安装在掩膜版(120)的前面并包括EUV透射膜(132)的薄膜(130)，在使用中，该透射膜将透射光散射成具有主轴(114)的椭圆散射图案(112)；以及变形高高NA成像系统(140)，其被配置为将由掩膜版(120)反射的光通过薄膜(130)投射到目标晶片(150)上；其中成像系统(140)的接收锥(160)的横截面(162)具有主轴(164)，并且其中薄膜(130)相对于成像系统(140)被布置，使得散射图案(112)的主轴(114)相对于成像系统(140)的接收锥(160)的横截面(162)的主轴(164)成一角度定向。

Description

EUVL扫描仪
技术领域
本发明涉及一种EUVL扫描仪。
发明背景
在半导体制造中，在定义器件和电路图案的过程中广泛使用各种光刻工艺。取决于要定义的特征的尺寸，可以使用不同的光学光刻工艺。在光刻工艺中，存在于光掩模或掩膜版上的图案可以通过照射掩膜版而转移到光敏光致抗蚀剂涂层。通常，光由掩膜版图案调制并成像到涂有光敏光致抗蚀剂的晶片上。
在传统的光刻法中，薄膜通常被放置在掩膜版上，以便在处理和曝光期间保护掩膜版免受污染。薄膜将保护掩膜版免受不需要的颗粒的影响，否则这些颗粒会对掩膜版上的图案的保真度产生负面影响，并且因此将图案转移到晶片上。
随着图案变得更小，对利用较短波长存在兴趣。在极紫外光刻中，EUVL经常使用约13.5nm的波长。向更短波长的转变已经引发了对新型薄膜设计的探求，这种薄膜设计为EUV辐射提供了高透射率，并且可以承受EUVL扫描仪中通常苛刻的条件。
发明内容
本发明构思基于这样的认识，即用于EUVL扫描仪的典型薄膜设计可能导致透过该薄膜的光的不可忽略的散射。如果由薄膜散射的光被EUVL扫描仪的成像系统收集，则这可能导致转移到目标晶片的图案的保真度降低。例如，由薄膜散射的光可能在EUVL扫描仪中引起光学问题，诸如成像误差。本发明的目的是提供一种解决薄膜光散射问题的EUVL扫描仪。从下面可以理解其他或替代目的。根据第一方面，提供了一种EUVL扫描仪。该EUVL扫描仪包括：EUV光源；掩膜版；安装在掩膜版的前面并包括EUV透射膜的薄膜，在使用中，该透射膜将透射光散射成具有主轴的椭圆散射图案；以及变形高数值孔径(“高NA”)成像系统，其被配置为将由掩膜版反射的光通过薄膜投射到目标晶片上；其中成像系统的接收锥的横截面具有主轴，并且其中薄膜相对于成像系统被布置，使得散射图案的主轴相对于成像系统的接收锥的横截面的主轴成一角度定向。在本申请的上下文中，措辞“变形高NA成像系统”应当被解释为具有接收锥的成像系统，并且接收锥具有非圆形横截面。换句话说，在横向于成像系统的光轴的第一方向上，成像系统具有第一数值孔径，并且在横向于成像系统的光轴的第二方向上，成像系统具有第二数值孔径。在本申请的上下文中，措辞“接受锥”应被解释为锥形，在其内部，入射在成像系统上的光被投射到晶片上。
借助于本EUVL扫描仪，可以减少由进入成像系统的薄膜散射的光量，从而减少与薄膜散射的光有关的光学问题。换句话说，通过相对于成像系统来布置薄膜，使得散射图案的主轴相对于成像系统的接收锥的横截面的主轴成一角度定向，由进入成像系统的薄膜散射的光量可以通过控制角度来控制。
透射膜可包括至少一片碳纳米管束。
在本申请的上下文中，“碳纳米管束”应当被解释为沿着主要方向排列的诸单独的碳纳米管以形成束。单独的碳纳米管可以是单壁碳纳米管或多壁碳纳米管。在制造碳纳米管薄膜期间，这种碳纳米管束倾向于自发形成。
包含至少一片碳纳米管束的透射膜的优点在于，在深紫外光谱和极紫外光谱中可以降低透射膜的EUV光的吸收。
所述至少一片碳纳米管束可包括多个基本平行的碳纳米管束。
在本申请的上下文中，措辞“基本上平行”应被解释为在±10％内平行。
包括多个基本平行的碳纳米管束的至少一片碳纳米管束的优点在于，在薄膜中散射的光的椭圆散射图案可以更加各向异性。
散射图案的主轴可被定向为横向于成像系统的接收锥的横截面的主轴。
使散射图案的主轴被定向为横向于成像系统的接收锥的横截面的主轴的优点在于，它可以使由成像系统不接受的薄膜散射的光量最大化。换句话说，它可以使投射到目标晶片的薄膜散射的光量最小化。使投射到目标晶片的薄膜散射的光量最小化可以减少闪光。
根据下面给出的详细描述，本公开的进一步适用范围将变得显而易见。然而，应该理解的是，详细描述和具体示例虽然指示了本发明构思的优选变型，但是仅以说明的方式给出，因为根据说明书的详细描述，在本发明构思的范围内的各种变化和修改对于技术人员将变得显而易见。
因此，应该理解，本发明构思不限于所描述的系统的特定组成部分，因为这样的系统可以变化。还应理解，本文使用的术语仅用于描述特定实施方案的目的，而不是限制性的。必须注意的是，如说明书和所附权利要求中所使用的，冠词“一”、“一个”、“该”和“所述”旨在表示存在一个或多个元件，除非上下文另有明确规定。因此，例如，对“一个单元”或“该单元”的引用可以包括几个设备等。此外，词语“包括”、“包含”、“含有”和类似的措辞不排除其他元素。
附图的简要说明
现在将参考示出本发明实施例的附图更详细地描述本发明的上述和其他方面。不应认为附图将本发明限制于特定实施例；相反，它们用于解释和理解本发明。
如在附图中所解说的，层和区域的尺寸出于说明的目的被放大，并且因而被用于解说本发明的各实施例的通用结构。在全文中，相同的标记指代相同的元件。
图1A解说了EUVL扫描仪的示意图，该扫描仪包括光源、掩膜版、薄膜，和变形高NA成像系统。
图1B解说了在扫描仪的光瞳平面中，变形高NA成像系统的接收锥的横截面和由薄膜散射的光的散射图案，其中EUV光源被布置成用于常规照明。
具体实施方式
现在将在下文中参考附图更全面地描述本发明的构思，其中示出了本发明构思的当前优选变型。然而，本发明构思可以以许多不同的形式实现，并且不应该被解释为限于这里阐述的变型；相反，提供这些变型是为了彻底和完整，并且将本发明的构思的范围完全传达给技术人员。
图1A解说了EUVL扫描仪10的示意图。该EURVL扫描仪10包括EUV光源110、掩膜版120、薄膜130和变形高NA成像系统140。EUVL扫描仪10可具有光轴，如图1A中所例示的。
EUV光源110可发射波长在5-40nm之间的光。EUV光源110可包含等离子体。EUV光源110可包括光学器件。光学元件可以是反射光学元件。光学器件可包括准直光学器件和/或布置成用于照亮掩膜版120的光学器件。光学器件可包括瞳孔镜。瞳孔镜可以定义扫描仪的瞳孔平面。可为掩膜版120的离轴照明布置EUV光源110。EUV光源110可被布置成用于掩膜版120的偶极照明。EUV光源110可被布置成用于掩膜版120的四极照明。EUV光源110可被布置成用于自由形式的照明。技术人员认识到，EUV光源110的布置可基于掩膜版120上的图案。例如，可将EUV光源110布置为用于偶极照明，用于将掩膜版120的线图案投射到目标晶片150上。
掩膜版120可包含线图案。线图案可具有主方向。线图案的主方向可以是线图案的纵向。掩膜版120可包括矩形图案。掩膜版120可包含多个矩形图案。掩膜版120可包括定义通过或阻挡层的矩形图案(例如，用于线的后端的互连层图案)。在进一步示例中，掩膜版120可包含用于标准单元、逻辑和存储器应用(诸如DRAM)中的密集矩形层。
薄膜130被安装在掩膜版120的前面。薄膜130包括EUV透射膜132。透射膜132可包括至少一个碳纳米管束的薄片或薄膜。该至少一片碳纳米管束可包括多个基本上平行的碳纳米管束，所述碳纳米管束包括单壁和/或多壁碳纳米管。多个基本上平行的碳纳米管束可以基本上平行于至少一片碳纳米管束的表面。用于碳纳米管合成的方法的示例包括基于电弧放电方法、激光烧蚀和CVD方法的技术，其包括浮动催化剂(气溶胶)CVD合成，如本领域中本身已知的。
在使用中，EUV透射膜132将透射光散射成具有主轴114的椭圆散射图案112。将关于图1B来描述椭圆散射图案112。
变形高NA成像系统140被配置为将由掩膜版120反射的光通过薄膜130投射到目标晶圆150上。变形高NA成像系统140可以包括光学器件。光学器件可以是反射光学器件。
成像系统140的接收锥160的横截面162具有主轴164。成像系统140的接收锥160的横截面162可以具有短轴。接收锥160的横截面162可以是接收锥160的横切截面。成像系统140的接收锥160的横截面162的主轴164可以对应于(掩膜版侧)的高于0.1的数值孔径。成像系统140的接收锥160的横截面162的短轴可以对应于(掩膜版侧)的低于0.1的数值孔径。对应于接收锥160的横截面162的主轴164的数值孔径可以大于对应于接收锥160的横截面162的短轴的数值孔径。
图1B在光瞳平面中示出了变形高NA成像系统140的接收锥160的横截面162和在薄膜130中散射的光的椭圆散射图案112。接收锥160的横截面162具有主轴164。
椭圆散射图案112可以是横向于光轴100的平面中的光的强度分布。椭圆散射图案112具有主轴114。主轴114可以是在横向于光轴100的平面中的光强度分布的半峰处的最大全宽。
如图1B中所例示的，EUV光源110可以被布置成用于掩膜版120的传统照明。EUV光源110可以被布置成用于掩膜版120的环形照明、掩膜版120的偶极照明、或者掩膜版120的四极照明、或者掩膜版120的自由形式照明。可以理解，掩膜版120上的不同图案可以具有EUV光源110的不同的最佳照明布置。
薄膜130相对于成像系统140被布置，使得散射图案112的主轴114相对于成像系统140的接收锥160的横截面162的主轴164成一角度定向。薄膜130可相对于成像系统140被布置，使得散射图案112的主轴114被定向为横向于成像系统140的接收锥160的横截面162的主轴164，如图1B中所例示的。
当由薄膜130散射的光的散射图案112的主轴114相对于成像系统140的接收锥160的横截面162的主轴164成一角度定向时，成像系统140的接收锥160外部散射的光量116、118可以通过控制主轴114、164之间的角度来控制。当由薄膜130散射的光散射图案112的主轴114横向于成像系统140的接收锥160的横截面162的主轴164被定向时，成像系统140的接收锥160外部散射的光量116、118可以被最大化，如图1B中所例示的。
本领域的技术人员认识到，本发明的概念绝不限于以上描述的优选变型。相反，许多修改和变型都有可能在所附权利要求书的范围内。
替换地，通过对附图、公开以及所附权利要求书的研究，技术人员在实施所要求保护的发明时可理解和实现所公开变型的变型。

Claims (4)

1.一种EUVL扫描仪(10)，包括：
EVU光源(110)；
掩膜版(120)；
安装在所述掩膜版(120)的前面并包括EUV透射膜(132)的薄膜(130)，在使用中，所述透射膜(132)将透射光散射成具有主轴(114)的椭圆散射图案(112)；以及
变形高NA成像系统(140)，被配置为将由所述掩膜版(120)反射的光通过所述薄膜(130)投射到目标晶片(150)上；
其中所述成像系统(140)的接收锥(160)的横截面(162)具有主轴(164)，并且其中所述薄膜(130)相对于所述成像系统(140)被布置，使得所述散射图案(112)的所述主轴(114)相对于所述成像系统(140)的所述接收锥(160)的所述横截面(162)的所述主轴(164)成一角度定向。
2.如权利要求1所述的EUVL扫描仪(10)，其特征在于，所述透射膜(132)包括至少一片碳纳米管束。
3.如权利要求2所述的EUVL扫描仪(10)，其特征在于，所述至少一片碳纳米管束包括多个基本上平行的碳纳米管束。
4.如权利要求1-3中任一项所述的EUVL扫描仪(10)，其特征在于，所述散射图案(112)的所述主轴(114)被定向为横向于所述成像系统(140)的所述接收锥(160)的所述横截面(162)的所述主轴(164)。
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