CN111371415A - Intelligent frequency discrimination linearizer of 6GHz-18GHz ultra-wideband solid-state power amplifier - Google Patents
Intelligent frequency discrimination linearizer of 6GHz-18GHz ultra-wideband solid-state power amplifier Download PDFInfo
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- CN111371415A CN111371415A CN202010176477.0A CN202010176477A CN111371415A CN 111371415 A CN111371415 A CN 111371415A CN 202010176477 A CN202010176477 A CN 202010176477A CN 111371415 A CN111371415 A CN 111371415A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
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Abstract
The invention discloses an intelligent frequency discrimination linearizer of a 6GHz-18GHz ultra-wideband solid-state power amplifier, which comprises two paths of power dividing modules, a frequency dividing module, a detecting module, an electrically-tuned attenuation module and a singlechip control module, the two paths of power division modules are used for acquiring radio frequency signals and respectively transmitting the radio frequency signals to the frequency division module and the detection module, the frequency division module reduces the frequency of the radio frequency signal by a certain multiple and transmits the radio frequency signal to the single chip microcomputer control module, the single-chip microcomputer control module receives the radio-frequency signal and detects the frequency information of the signal, the detection module is used for transmitting the radio-frequency signal to the electrically-tunable attenuation module and detecting the power information of the radio-frequency signal and transmitting the power information to the single-chip microcomputer control module, the singlechip control module outputs corresponding electrically-regulated voltage to the electrically-regulated attenuation module through the frequency information and the power information of the radio-frequency signal, the electrically-regulated attenuation module receives an electrically-regulated voltage and correspondingly releases the radio frequency signal according to a preset attenuation amount. The problem of gain linearity of the amplifier is solved, and the efficiency of the amplifier is ensured.
Description
Technical Field
The invention belongs to the technical field of amplifiers, and relates to an intelligent frequency discrimination linearizer of a 6GHz-18GHz ultra-wideband solid-state power amplifier.
Background
At present, in order to solve the problem of linearity of a solid-state power amplifier, the most commonly adopted method is a power back-off technology, namely, a high-power solid-state radio frequency amplifier is used for reducing power. Generally, when a small signal is used, a solid-state power amplifier works in a linear amplification region, the power gain begins to decrease as the power increases and gradually enters a saturated compression region, and in order to ensure the gain linearity of the amplifier, the amplifier is used by reducing the power, so that the linearity of the amplifier can be ensured.
In the prior art, a power back-off technology is simple and easy to implement, but a high-power amplifier can only be used with low power in order to ensure linearity, efficiency is greatly reduced, and the requirement of a 6-18 GHz ultra-wideband high-power solid-state power amplifier on improving gain linearity cannot be met.
Disclosure of Invention
The invention aims to: the intelligent frequency discrimination linearizer of the 6GHz-18GHz ultra-wideband solid-state power amplifier is provided, and the problem that the power backoff technology is simple and easy to realize, but a high-power amplifier can only be used with low power in order to ensure the linearity, the efficiency is greatly reduced, and the requirement of the 6-18 GHz ultra-wideband high-power solid-state power amplifier for improving the gain linearity cannot be met is solved.
The technical scheme adopted by the invention is as follows:
the intelligent frequency discrimination linearizer of the 6GHz-18GHz ultra-wideband solid-state power amplifier comprises two paths of power division modules, a frequency division module, a detection module, an electrically-tuned attenuation module and a singlechip control module, the two paths of power division modules are used for acquiring radio frequency signals and respectively transmitting the radio frequency signals to the frequency division module and the detection module, the frequency division module reduces the frequency of the radio frequency signal by a certain multiple and transmits the radio frequency signal to the single chip microcomputer control module, the single-chip microcomputer control module receives the radio-frequency signal and detects the frequency information of the signal, the detection module is used for transmitting the radio-frequency signal to the electrically-tunable attenuation module and detecting the power information of the radio-frequency signal and transmitting the power information to the single-chip microcomputer control module, the singlechip control module outputs corresponding electrically-regulated voltage to the electrically-regulated attenuation module through the frequency information and the power information of the radio-frequency signal, the electrically-regulated attenuation module receives an electrically-regulated voltage and correspondingly releases the radio frequency signal according to a preset attenuation amount.
Furthermore, the two paths of power distribution modules comprise a first metal cavity, a dielectric plate, two paths of microstrip lines and two isolation resistors, the two paths of microstrip lines are printed on the dielectric plate through a circuit printing technology, the dielectric plate is sintered on the first metal cavity, one end of each of the two paths of microstrip lines serves as a radio frequency input port, the other end of each of the two paths of microstrip lines serves as two radio frequency output ports, and two ends of the two isolation resistors are respectively welded with the two paths of microstrip lines.
Furthermore, the frequency division module comprises a first-stage frequency division 2 times, a second-stage frequency division 8 times and a third-stage frequency division 8 times which are sequentially arranged, the first-stage frequency division 2 times and the second-stage frequency division 8 times are connected through microstrip lines in a gold wire bonding mode, and the second-stage frequency division 8 times and the third-stage frequency division 8 times are connected through microstrip lines in a gold wire bonding mode.
Furthermore, the wave detection module adopts a wave detector bare chip to perform cavity sintering, and adopts micro-assembly to connect the radio frequency input/output bonding pad on the wave detector bare chip with the microstrip line through gold wire bonding.
Furthermore, the electrically tunable attenuation module comprises a second metal cavity, a PCB and an electrically tunable attenuation chip, wherein the PCB is sintered in the second metal cavity, and the radio frequency input and output ports of the electrically tunable attenuation chip are connected with the microstrip line on the PCB by gold wires through micro-assembly.
Further, the single chip microcomputer control module adopts an STM32 single chip microcomputer chip.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
compared with the power back-off technology, the invention detects the power information of the input radio frequency signal, correspondingly releases the preset attenuation quantity by controlling the electrically-adjusted attenuator, the gain compression amount of the amplifier approaching saturation is compensated, the problem of gain linearity of the amplifier is solved, the amplifier can be always in a gain linearity state within a rated power range in an ideal state, and meanwhile, the invention does not need to reduce power for use, can ensure the efficiency of the amplifier, for a high-power amplifier, a large number of amplifier chips can be saved, the effect of reducing the cost is achieved, meanwhile, the frequency discrimination technology is added, the frequency information of the input radio frequency signal is detected, the problem of poor consistency caused by the fact that the frequency range is too wide can be solved for the ultra-wideband amplifier, the attenuation amount is correspondingly adjusted according to different frequencies, and the gain linearity of the ultra-wideband amplifier in the whole frequency band can be guaranteed.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and that for those skilled in the art, other relevant drawings can be obtained according to the drawings without inventive effort, wherein:
FIG. 1 is a functional block diagram of the present invention;
FIG. 2 is a program flow diagram of a single-chip microcomputer control module of the present invention;
fig. 3 is a schematic diagram of a power dividing structure formed by a dielectric plate and a microstrip line of the two-path power dividing module of the invention;
FIG. 4 is a schematic structural diagram of an electrically tunable attenuation module of the present invention;
the labels in the figure are: 100-a dielectric plate, 101-two microstrip lines, 102-an isolation resistor, 200-a metal cavity, 201-a PCB and 202-an electrically-tuned attenuation chip.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the detailed description and specific examples, while indicating the preferred embodiment of the invention, are intended for purposes of illustration only and are not intended to limit the scope of the invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
It is noted that relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Example 1
As shown in fig. 1, the intelligent frequency discrimination linearizer of a 6GHz-18GHz ultra-wideband solid state power amplifier provided in a preferred embodiment of the present invention includes two power dividing modules, a frequency dividing module, a detecting module, an electrically tunable attenuation module, and a single chip microcomputer control module, where the two power dividing modules are configured to obtain a radio frequency signal and respectively transmit the radio frequency signal to the frequency dividing module and the detecting module, the frequency dividing module reduces the frequency of the radio frequency signal by a certain factor and transmits the radio frequency signal to the single chip microcomputer control module, the single chip microcomputer control module receives the radio frequency signal and detects frequency information of the signal, the detecting module is configured to transmit the radio frequency signal to the electrically tunable attenuation module and detect power information of the radio frequency signal and transmit the power information of the radio frequency signal to the single chip microcomputer control module, and the single chip microcomputer control module outputs a, the electrically-regulated attenuation module receives an electrically-regulated voltage and correspondingly releases the radio frequency signal according to a preset attenuation amount.
The working principle of the invention is as follows: the frequency division module carries out frequency reduction processing on the radio-frequency signals according to a certain multiple so that the single-chip microcomputer control module can receive the radio-frequency signals subjected to frequency reduction processing, the detection module receives the power information of the radio-frequency signals and converts the power information into voltage signals to transmit the voltage signals to the single-chip microcomputer control module, and the wave building module transmits the received radio-frequency signals to the electric regulation attenuation module. As shown in fig. 2, the single chip microcomputer control module receives and processes the radio frequency signal transmitted by the frequency division module, collects frequency information of the radio frequency signal, queries a corresponding relation table obtained by a pre-test according to the frequency information and the power information of the radio frequency signal to calculate an attenuation release amount, and converts the obtained attenuation release amount into a voltage regulation voltage through the DAC to be transmitted to the electrically tunable attenuation module. The electrically-adjustable attenuation module is used for adjusting the gain of the amplifier, a certain attenuation amount is preset by the electrically-adjustable attenuation module, the attenuation amount is not released when the amplifier works in a linear region, the attenuation amount is released by the control of the single chip microcomputer when the amplifier starts to enter a saturated compression region along with the increase of an input signal, and the gain compression amount is compensated, so that the power amplifier can always work in a gain linear region.
Example 2
On the basis of embodiment 1, a specific implementation means, namely, a 6GHz-18GHz ultra-wideband solid-state power amplifier intelligent frequency discrimination linearizer, is provided, as shown in fig. 3, where the two-way power dividing module includes a first metal cavity, a dielectric plate 100, two microstrip lines 101 and two isolation resistors 102, the two microstrip lines 101 are printed on the dielectric plate 100 by a circuit printing technique, the dielectric plate 100 is sintered on the first metal cavity, one end of each of the two microstrip lines 101 serves as a radio frequency input port, the other end of each of the two microstrip lines 101 serves as two radio frequency output ports, and two ends of each of the two isolation resistors 102 are respectively welded to the two microstrip lines 101. The dielectric plate 100 is made of Rogers 5880, the thickness of the circuit board formed by the dielectric plate 100 and the two microstrip lines 101 is 0.254mm, and gold plating is needed to be carried out on a sintering part.
The frequency division module comprises a first-stage frequency division 2 times, a second-stage frequency division 8 times and a third-stage frequency division 8 times which are sequentially arranged, the first-stage frequency division 2 times and the second-stage frequency division 8 times are connected through microstrip lines in a gold wire bonding mode, and the second-stage frequency division 8 times and the third-stage frequency division 8 times are connected through microstrip lines in a gold wire bonding mode.
In addition, the wave detection module adopts a wave detector bare chip to perform cavity sintering, and adopts micro-assembly to connect the radio frequency input/output bonding pad on the wave detector bare chip with the microstrip line through gold wire bonding. The cavity is machined by aluminum, and the chip of the detector, the microstrip line and the sintered part of the cavity are plated with gold.
Specifically, as shown in fig. 4, the electrically tunable attenuation module includes a second metal cavity 200, a PCB 201 and an electrically tunable attenuation chip 202, the PCB is disposed in the second metal cavity 200, and radio frequency input and output ports of the electrically tunable attenuation chip 202 are connected to microstrip lines on the PCB by gold wires through micro-assembly. The second metal cavity 200 is machined from aluminum, and the electrically tunable attenuation chip 202, the microstrip line and the sintering portion of the second metal cavity 200 need to be plated with gold.
Preferably, the single chip microcomputer control module adopts an STM32 single chip microcomputer chip.
In the implementation process, the wilkinson equal division technology is adopted inside the two common division modules, and the two separated microstrip lines 101 are isolated by two isolation resistors 102, wherein one is 90 ohms and the other is 180 ohms. Wherein single chip microcomputer control module adopts STM32 single chip microcomputer chip, divides frequency 128 times through first order frequency division 2 times, second level frequency division 8 times and third level frequency division 8 times totally for 18GHz is about 140MHz after the frequency division, accords with STM32 single chip microcomputer chip frequency discrimination scope at 0 to 180MHz, and the signal frequency after the frequency division can detect through STM32 single chip microcomputer chip module.
In addition, the power supply of each module and the voltage signal transmission among the modules need to be filtered, otherwise, unstable acquisition can be caused, and power jitter is generated. And capacitors of 10nF, 100nF, 1uF and 10uF are distributed on the respective power supply board from small to large in sequence near the power supply pin for filtering.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and should not be taken as limiting the scope of the present invention, and any modifications, equivalents and improvements made by those skilled in the art within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (6)
1.6GHz-18GHz ultra wide band solid state power amplifier intelligence frequency discrimination linearizer, its characterized in that: the power control system comprises two power dividing modules, a frequency dividing module, a detection module, an electric regulation attenuation module and a single-chip microcomputer control module, wherein the two power dividing modules are used for acquiring radio frequency signals and transmitting the radio frequency signals to the frequency dividing module and the detection module respectively, the frequency dividing module reduces the frequency of the radio frequency signals by a certain multiple and transmits the frequency to the single-chip microcomputer control module, the single-chip microcomputer control module receives the frequency information of the radio frequency signals and detects the frequency information of the signals, the detection module transmits the radio frequency signals to the electric regulation attenuation module, the power information of the detected radio frequency signals is transmitted to the single-chip microcomputer control module, the single-chip microcomputer control module outputs corresponding electric regulation voltage to the electric regulation attenuation module through the frequency information and the power information of the radio frequency signals, and the electric regulation attenuation module receives the electric.
2. The 6GHz-18GHz ultra wide band solid state power amplifier intelligent frequency discrimination linearizer of claim 1, wherein: the two-path power distribution module comprises a first metal cavity, a dielectric plate, two-path microstrip lines and two isolation resistors, wherein the two-path microstrip lines are printed on the dielectric plate through a circuit printing technology, the dielectric plate is sintered on the first metal cavity, one end of each of the two-path microstrip lines serves as a radio frequency input port, the other end of each of the two-path microstrip lines serves as two radio frequency output ports, and two ends of each of the two isolation resistors are respectively welded with the two-path microstrip lines.
3. The 6GHz-18GHz ultra wide band solid state power amplifier intelligent frequency discrimination linearizer of claim 1, wherein: the frequency division module comprises a first-stage frequency division 2 times, a second-stage frequency division 8 times and a third-stage frequency division 8 times which are sequentially arranged, the first-stage frequency division 2 times and the second-stage frequency division 8 times are connected through microstrip lines in a gold wire bonding mode, and the second-stage frequency division 8 times and the third-stage frequency division 8 times are connected through microstrip lines in a gold wire bonding mode.
4. The 6GHz-18GHz ultra wide band solid state power amplifier intelligent frequency discrimination linearizer of claim 1, wherein: the wave detection module adopts a wave detector bare chip to perform cavity sintering, and adopts micro-assembly to connect the radio frequency input/output bonding pad on the wave detector bare chip with the microstrip line through gold wire bonding.
5. The 6GHz-18GHz ultra wide band solid state power amplifier intelligent frequency discrimination linearizer of claim 1, wherein: the electrically-tunable attenuation module comprises a second metal cavity, a PCB and an electrically-tunable attenuation chip, wherein the PCB is sintered in the second metal cavity, and the radio frequency input and output ports of the electrically-tunable attenuation chip are connected with a microstrip line on the PCB by gold wires through micro-assembly.
6. The 6GHz-18GHz ultra wide band solid state power amplifier intelligent frequency discrimination linearizer of claim 1, wherein: the single-chip microcomputer control module adopts an STM32 single-chip microcomputer chip.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010176477.0A CN111371415A (en) | 2020-03-13 | 2020-03-13 | Intelligent frequency discrimination linearizer of 6GHz-18GHz ultra-wideband solid-state power amplifier |
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| CN202010176477.0A CN111371415A (en) | 2020-03-13 | 2020-03-13 | Intelligent frequency discrimination linearizer of 6GHz-18GHz ultra-wideband solid-state power amplifier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117595794A (en) * | 2024-01-19 | 2024-02-23 | 成都雷电微力科技股份有限公司 | Frequency division suppression structure based on 3D heterogeneous power amplifier chip |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103825589A (en) * | 2014-01-21 | 2014-05-28 | 中国电子科技集团公司第四十一研究所 | Dual-channel output microwave signal source amplitude stabilization control device |
| CN104425863A (en) * | 2013-08-19 | 2015-03-18 | 电子科技大学 | Broadband 180-degree phase-reverse microstrip half power divider |
| CN107508644A (en) * | 2016-06-14 | 2017-12-22 | 中兴通讯股份有限公司 | A kind of feedback channel on-line calibration method and its device |
| CN206993063U (en) * | 2017-07-28 | 2018-02-09 | 中国电子科技集团公司第五十四研究所 | A kind of Ku frequency ranges solid-state power combination amplifier |
-
2020
- 2020-03-13 CN CN202010176477.0A patent/CN111371415A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104425863A (en) * | 2013-08-19 | 2015-03-18 | 电子科技大学 | Broadband 180-degree phase-reverse microstrip half power divider |
| CN103825589A (en) * | 2014-01-21 | 2014-05-28 | 中国电子科技集团公司第四十一研究所 | Dual-channel output microwave signal source amplitude stabilization control device |
| CN107508644A (en) * | 2016-06-14 | 2017-12-22 | 中兴通讯股份有限公司 | A kind of feedback channel on-line calibration method and its device |
| CN206993063U (en) * | 2017-07-28 | 2018-02-09 | 中国电子科技集团公司第五十四研究所 | A kind of Ku frequency ranges solid-state power combination amplifier |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117595794A (en) * | 2024-01-19 | 2024-02-23 | 成都雷电微力科技股份有限公司 | Frequency division suppression structure based on 3D heterogeneous power amplifier chip |
| CN117595794B (en) * | 2024-01-19 | 2024-04-12 | 成都雷电微力科技股份有限公司 | Frequency division suppression structure based on 3D heterogeneous power amplifier chip |
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Application publication date: 20200703 |