CN111628734A - Novel S-band low-cost high-efficiency broadband continuous wave power amplifier matching circuit - Google Patents
Novel S-band low-cost high-efficiency broadband continuous wave power amplifier matching circuit Download PDFInfo
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- CN111628734A CN111628734A CN202010418232.4A CN202010418232A CN111628734A CN 111628734 A CN111628734 A CN 111628734A CN 202010418232 A CN202010418232 A CN 202010418232A CN 111628734 A CN111628734 A CN 111628734A
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- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
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Abstract
The invention discloses a novel S-band low-cost high-efficiency broadband continuous wave power amplifier matching circuit, which aims to overcome the defects of two ways of realizing the S-band broadband power amplifier matching circuit on the market based on the defects of common ways on the market, and improves the consistency and the reliability of products while reducing the cost. The matching circuit network of the S-band broadband continuous wave power amplifier is realized by adopting a pure micro-strip form, so that the circuit can adopt a packaged integrated power device without using a high-frequency capacitor. The product cost is reduced, the same excellent electrical performance index is kept, and meanwhile the reliability and the mass production consistency of the circuit are improved. According to the application document, the matching circuit can be practically applied to a broadband GaN power amplifier tube CGH40045F of Cree company through the matching of a transistor grid matching circuit and a transistor drain matching circuit and the adoption of a pureness microstrip line circuit, and the amplification function of radio-frequency signals is mainly realized in the whole 400MHz bandwidth of 2.3 GHz-2.7 GHz.
Description
Technical Field
The invention belongs to the field of broadband continuous wave power amplifier matching circuits, and relates to a novel S-band low-cost high-efficiency broadband continuous wave power amplifier matching circuit.
Background
At present, the demand of S-band broadband power amplifiers in a communication system is rapidly increased, although some S-band power amplifiers are provided at the present stage, the power amplifiers with high power and broadband are few, and the performance indexes of the S-band broadband power amplifiers can meet the demand of the S-band communication system in all aspects, and the high-power and broadband communication demands of users can not be met. Some power amplifier radio frequency control turn-off levels can not meet the use requirements, and the response time can not meet the system requirements; some working bandwidths can not meet the bandwidth requirement of the communication equipment; some have lower efficiency, and the volume is too big, and some heat dissipation can not satisfy the system requirement.
Traditional S wave band broadband power amplifier design matching circuit can adopt the microstrip to match with high frequency capacitance' S mode, high frequency capacitance is difficult because its high Q value and processing technology, its cost is higher than ordinary electric capacity, in traditional power amplifier design, we adopt this kind of high frequency capacitance in a large number, can be very big carry the cost, because high frequency capacitance itself still has equivalent series resistance ESR and equivalent series inductance ESL, so still have certain loss in practical application, to continuous wave power amplifier application, its mode of operation that lasts high power output, can lead to high frequency capacitance in the matching circuit because the loss produces a large amount of heats, long-term operation has certain reliability risk. Meanwhile, each index of the high-frequency capacitor has a certain error range, so that when more high-frequency capacitors are adopted for matching in design, the instability of the consistency of the product caused by the errors can greatly influence the one-time line passing rate of the batch production of the product, and the production cost of the product is greatly increased.
Disclosure of Invention
The invention aims to: the novel S-band low-cost high-efficiency broadband continuous wave power amplifier matching circuit solves the problems of high cost, low consistency difference production straight-through rate, low reliability and complex process of the conventional S-band broadband continuous wave radio frequency power amplifier matching circuit at present.
The technical scheme adopted by the invention is as follows:
the utility model provides a novel S wave band low-cost high efficiency broadband continuous wave power amplifier matching circuit, including that radio frequency signal gets into power amplifier transistor gate matching circuit through blocking direct current electric capacity C1 through the microstrip transmission line, direct current negative voltage passes through behind filter electric capacity C6, C5 and a section microstrip line, on the grid of rethread series resistance R1 transmission power amplifier tube in the transistor gate matching circuit, export on the transistor leakage matching circuit after the power amplifier tube is enlargied, in rethread blocking direct current electric capacity C2 transmits the microstrip line that sets up on the output, this microstrip line passes through the antenna at last and transmits system radio frequency signal to the space in, the work direct current voltage of transistor leakage matching circuit passes through filter electric capacity C4, C3 and a section microstrip line and transmits power amplifier leakage, provide DC power supply for power amplifier work.
The S wave band mainly refers to a signal frequency band between 2GHz and 4GHz, and is mainly applied to scenes such as relay, satellite communication, radar, Wifi, mobile communication, corresponding electronic countermeasure and the like. The radio frequency tail end of the whole system in each application field is less than the radio frequency power amplifier module. It is necessary to improve circuit uniformity and stability as much as possible and to reduce cost as much as possible in the circuit design of the rf power amplifier module.
The existing S-band power amplifier on the market is mainly applied to radio frequency terminals in the fields of WiFi, mobile communication, electronic countermeasure and the like, and the existing S-band broadband power amplifier matching circuit on the market is basically realized in a mode of combining a micro-strip with a high-frequency capacitor or in a mode of micro-assembling a ceramic substrate. The first mode high-frequency capacitor is expensive in cost, reliability risks caused by poor heat dissipation exist during continuous wave high-power work, certain errors exist, index consistency of a power amplifier circuit is affected, cost is improved, the second mode is processed by a micro-assembly process, and chip-level devices are adopted, so that cost is high.
The second implementation mode of the S-band broadband radio frequency power amplifier module is that a chip-level transistor is sintered on a radiating flange by using a eutectic process, and a grid electrode and a drain electrode of the transistor chip are bonded to a micro-strip matching network designed in a simulation mode on an Al2O3 ceramic substrate by using a gold wire. The method has the advantages of good consistency and small circuit volume, and is very suitable for application scenes sensitive to product volume, such as airborne equipment and the like. However, the material and processing costs are very high, and the design and implementation of the radio frequency power amplifier can not be realized due to too high cost in general industrial-grade or civil-grade products.
Based on the defects of the common modes on the market, the matching circuit aims to overcome the defects of the two modes of realizing the S-band broadband power amplifier on the market, and improves the consistency and reliability of products while reducing the cost. The matching circuit network of the S-band broadband continuous wave power amplifier is realized by adopting a pure micro-strip form, so that the circuit can adopt a packaged integrated power device without using a high-frequency capacitor. The product cost is reduced, the same excellent electrical performance index is kept, and meanwhile the reliability and the mass production consistency of the circuit are improved.
According to the application document, the matching circuit can be practically applied to a broadband GaN power amplifier tube CGH40045F of Cree company through the matching of a transistor grid matching circuit and a transistor drain matching circuit and the adoption of a pureness microstrip line circuit, and the amplification function of radio-frequency signals is mainly realized in the whole 400MHz bandwidth of 2.3 GHz-2.7 GHz.
Furthermore, the transistor gate matching circuit adopts a pure microstrip circuit, the width of the microstrip circuit is 15mm, the length of the microstrip circuit is 16.5mm, and one end of the microstrip circuit is connected with the DC blocking capacitor C1.
Furthermore, the pure microstrip circuit structure adopted by the transistor gate matching circuit is that one side of a rectangular microstrip piece is connected with an access microstrip piece, one side of the access microstrip piece, which is far away from the rectangular microstrip piece, is provided with an access piece head, the width of the connection surface of the access microstrip piece and the access piece head is smaller than the connection width of the access microstrip piece and the rectangular microstrip piece, and the side line of the access piece head protrudes towards two sides.
Furthermore, the transistor drain matching circuit adopts a pure microstrip circuit, the width of the microstrip circuit is 16.5mm, the length of the microstrip circuit is 18.1mm, and one end of the microstrip circuit is connected with the blocking capacitor C2.
Furthermore, the pure microstrip circuit structure adopted by the transistor drain matching circuit is that one side of a rectangular microstrip piece is connected with a triangular microstrip piece, and an access piece head is connected to the vertex angle of the triangular microstrip piece.
Further, the power amplifier tube is a broadband GaN power amplifier tube CGH 40045F.
Furthermore, the transistor grid matching circuit and the transistor drain matching circuit are processed by adopting the thickness of 1 ounce copper, and the two circuits are arranged on the corresponding power amplifier grid and the drain in a matched mode in the PCB design.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
1. a novel S-band low-cost high-efficiency broadband continuous wave power amplifier matching circuit reduces cost and improves product consistency and reliability.
2. A novel S-band low-cost high-efficiency broadband continuous wave power amplifier matching circuit adopts a pure microstrip form to realize a matching circuit network of an S-band broadband continuous wave power amplifier, so that the circuit can adopt a package integrated power device without using a high-frequency capacitor.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and that for those skilled in the art, other relevant drawings can be obtained according to the drawings without inventive effort, wherein:
FIG. 1 is a novel S-band low-cost high-efficiency broadband continuous wave power amplifier matching circuit;
FIG. 2 is a graph of power amplifier tube S parameter (S21) simulation data;
FIG. 3 is a graph of power amplifier tube S parameter (S11) simulation data;
FIG. 4 is a graph of power amplifier tube stability simulation data;
FIG. 5 is a diagram of power amplifier tube large signal output power and harmonic simulation data;
FIG. 6 is a diagram of simulation data of large signal output efficiency of a power amplifier tube;
FIG. 7 is a graph of power tube gain-output power simulation data;
FIG. 8 is a graph of power tube AM-AM simulation data.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the detailed description and specific examples, while indicating the preferred embodiment of the invention, are intended for purposes of illustration only and are not intended to limit the scope of the invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
It is noted that relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The features and properties of the present invention are described in further detail below with reference to examples.
Example one
The novel S-band low-cost high-efficiency broadband continuous wave power amplifier matching circuit provided by the preferred embodiment of the invention comprises a power amplifier transistor grid matching circuit, wherein a radio frequency signal enters the power amplifier transistor grid matching circuit through a microstrip transmission line through a blocking capacitor C1, a direct current negative voltage passes through a filter capacitor C6, a filter capacitor C5 and a section of microstrip line, then is transmitted to the grid of a power amplifier tube in the transistor grid matching circuit through a series resistor R1, is amplified by the power amplifier tube and then is output to a transistor drain matching circuit, then is transmitted to the microstrip line arranged on an output end through the blocking capacitor C2, finally the microstrip line transmits a system radio frequency signal to a space through an antenna, and the working direct current voltage of the transistor drain matching circuit is transmitted to the power amplifier drain through the filter capacitors C4, C3 and the section of microstrip line, so as to provide a direct current power supply for power amplifier.
The matching circuit can be practically applied to a broadband GaN power amplifying tube CGH40045F of Cree company, and mainly realizes the amplification function of radio frequency signals in the whole 400MHz bandwidth of 2.3 GHz-2.7 GHz. As shown in figure 1, in practical use, a radio frequency signal enters a power amplifier grid input matching circuit through a 50-ohm microstrip transmission line and a blocking capacitor C1, the power amplifier grid input matching circuit can realize that the impedance of an input end is converted from 50-ohm to the impedance of a CGH40045F power tube grid in a 2.3-2.7 GHz band in the whole 400MHz frequency range of 2.3-2.7 GHz, and the matching design realizes the matching of wider bandwidth by reducing the Q value of the matching circuit and meets the grid input matching requirement of the CGH40045F in a broadband range.
The grid input matching circuit comprises a CGH40045F power amplifier tube grid feed circuit network. The working mode is that the direct-current negative voltage is biased to be about-3V, passes through the filter capacitors C6 and C5 and a section of microstrip line, and is transmitted to the grid electrode of the power amplifier tube CGH40045F through the series resistor R1. The feed network is designed to have a low Q value, so that a high impedance effect on radio frequency signals in a broadband range can be realized, and system oscillation caused by the fact that the radio frequency signals are transmitted to a power supply through the feed network is avoided. Meanwhile, R1 can reduce equivalent series inductance ESL of the feed network to improve the reliability of the power amplifier circuit and reduce the ringing of the rising edge in the application scene of the power amplifier pulse.
The radio frequency signal is transmitted to the grid electrode of the power amplifier tube through input matching, is amplified by the power amplifier tube and then is output to an output microstrip matching circuit through the leakage stage of the power amplifier tube, and then is transmitted to a microstrip line with the output end of 50 ohms through a blocking capacitor C2, and finally the radio frequency signal of the system is transmitted to the space through an antenna. The power amplifier drain output matching circuit mainly realizes that the drain impedance of the power amplifier tube CGH40045F at 2.3 GHz-2.7 GHz is matched to 50 omega. The design adopts a lower Q value, so that the leakage stage impedance of the CGH40045F power amplifier tube can be matched to 50 omega in a wider bandwidth. The power amplifier leakage output matching also comprises a power amplifier leakage feed circuit network. The power amplifier tube leakage stage working direct current voltage +28V is transmitted to the power amplifier leakage stage through the filter capacitors C4 and C3 and a section of microstrip line, and a direct current power supply is provided for power amplifier work. The feed network is also optimized through simulation, the Q value of the feed network is reduced, high impedance is generated on radio frequency signals in the whole working bandwidth, and the condition that the radio frequency signals are transmitted to an external power supply through the feed network to cause the oscillation of an interference machine of the whole system is avoided. Meanwhile, the feed network reduces the ESL of the equivalent series inductor in the band through simulation optimization, thereby improving the reliability of the power amplifier and reducing the ringing of the rising edge in the application scene of the power amplifier pulse.
Example two
The transistor grid matching circuit adopts a pure microstrip circuit, the width of the microstrip circuit is 15mm, the length of the microstrip circuit is 16.5mm, and one end of the microstrip circuit is connected with a DC blocking capacitor C1. The pure microstrip circuit structure adopted by the transistor grid matching circuit is that one side of a rectangular microstrip piece is connected with an access microstrip piece, one side of the access microstrip piece, which is far away from the rectangular microstrip piece, is provided with an access piece head, the width of the connection surface of the access microstrip piece and the access piece head is smaller than the connection width of the access microstrip piece and the rectangular microstrip piece, and the side line of the access piece head protrudes towards two sides.
The transistor drain matching circuit adopts a pure microstrip circuit, the width of the microstrip circuit is 16.5mm, the length of the microstrip circuit is 18.1mm, and one end of the microstrip circuit is connected with a DC blocking capacitor C2. The pure microstrip circuit structure adopted by the transistor drain matching circuit is that one side of a rectangular microstrip piece is connected with a triangular microstrip piece, and an access piece head is connected to the vertex angle of the triangular microstrip piece.
The technology adopted by the application document is that a pure microstrip form is adopted for matching the power tube CGH40045F, so the physical size and the shape of the power tube CGH40045 are required to be optimized and selected to a certain extent, in the two matching circuits, the width and the length of the microstrip circuit are optimal parameters, technicians are recommended to select the matching circuits, in addition, in the processing process, the transistor grid matching circuit and the transistor drain stage matching circuit are processed by adopting the thickness of 1 ounce copper, and in the PCB design, the two circuits are arranged on the corresponding power amplifier tube grid and the drain stage in a matching mode.
EXAMPLE III
For the circuit effect of the present document, a simulation experiment is performed, and experimental data thereof are shown in fig. 2 to 8, where fig. 2 is simulation data of S parameter (S21) of the power amplifier tube, it can be known that dB (S (2,1)) reaches a maximum value of 16.439 at m5, that is, at a frequency of 2.490 Ghz; in the simulation data of the S parameter (S11) of the power amplifier tube of FIG. 3, dB (S (1,1) is-4.023) reaching a minimum value at a frequency of 2.460 GHz.
Fig. 4 is power amplifier tube stability simulation data, where K is a dual-port network stability factor, and when K is greater than 1, the entire dual-port network is in a stable state, and a calculation formula thereof is:
k＝{1-|S11|2-|S22|2+|S11*S22-S12*S21|2}/{2*|S12*S21|}；
fig. 5 shows the large signal output power and harmonic simulation data of the power amplifier, and it can be seen that the total in-band output power of the power amplifier is greater than 47dBm, i.e. 50W, after the power amplifier passes through the matching circuit.
As shown in the simulation data of the large-signal output efficiency of the power amplifier tube in fig. 6, it can be seen that the output efficiency of the power amplifier tube in the whole band after passing through the matching circuit is between 52% and 55%.
Fig. 7 shows the simulation data of the gain-output power of the power tube, and it can be seen that the output power of the 1dB compression point of the power tube after passing through the matching circuit is greater than 47dBm, i.e. 50W.
Fig. 8 shows AM-AM simulation data of the power tube, and it can be seen that the saturated output power of the power tube after passing through the matching circuit is approximately 48.4dBm, that is, 69W.
The simulation experiment result shows that the actual in-band output performance of the power amplifier tube passing through the matching network can reach more than 50W of continuous waves, and meanwhile, the single tube output efficiency is about 55 percent. The actual test index is superior to the original factory device data.
In summary, the power amplifier broadband matching circuit designed by the invention can amplify continuous wave radio frequency signals in the whole 400MHz bandwidth frequency band of 2.3 GHz-2.7 GHz in the S band through the power tube CGH40045F and output continuous wave radio frequency power of more than 50W, and simultaneously, the corresponding working efficiency is about 55%, thereby realizing better indexes than original plant device data, optimizing the reliability and consistency of the circuit, reducing the cost and a certain circuit volume, and meeting the application scene of the radio frequency end of the corresponding frequency band electronic countermeasure equipment.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and should not be taken as limiting the scope of the present invention, and any modifications, equivalents and improvements made by those skilled in the art within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (7)
1. The utility model provides a novel S wave band low-cost high efficiency broadband continuous wave power amplifier matching circuit which characterized in that: radio-frequency signals enter a power amplifier transistor grid matching circuit through a microstrip transmission line and a blocking capacitor C1, direct-current negative voltage passes through a filter capacitor C6, a filter capacitor C5 and a section of microstrip line and then is transmitted to the grid of a power amplifier tube in the transistor grid matching circuit through a series resistor R1, the direct-current negative voltage is amplified by the power amplifier tube and then is output to a transistor drain matching circuit, the direct-current negative voltage is transmitted to the microstrip line arranged on an output end through the blocking capacitor C2, finally the microstrip line transmits system radio-frequency signals to space through an antenna, working direct-current voltage of the transistor drain matching circuit is transmitted to a power amplifier drain through the filter capacitors C4 and C3 and the section of microstrip line, and a direct-current power supply is provided for power amplifier work.
2. The novel S-band low-cost high-efficiency broadband continuous wave power amplifier matching circuit according to claim 1, characterized in that: the transistor grid matching circuit adopts a pure microstrip circuit, the width of the microstrip circuit is 15mm, the length of the microstrip circuit is 16.5mm, and one end of the microstrip circuit is connected with a DC blocking capacitor C1.
3. The novel S-band low-cost high-efficiency broadband continuous wave power amplifier matching circuit according to claim 2, characterized in that: the pure microstrip circuit structure adopted by the transistor grid matching circuit is that one side of a rectangular microstrip piece is connected with an access microstrip piece, one side of the access microstrip piece, which is far away from the rectangular microstrip piece, is provided with an access piece head, the width of the connection surface of the access microstrip piece and the access piece head is smaller than the connection width of the access microstrip piece and the rectangular microstrip piece, and the side line of the access piece head protrudes towards two sides.
4. The novel S-band low-cost high-efficiency broadband continuous wave power amplifier matching circuit according to claim 1, characterized in that: the transistor drain matching circuit adopts a pure microstrip circuit, the width of the microstrip circuit is 16.5mm, the length of the microstrip circuit is 18.1mm, and one end of the microstrip circuit is connected with a DC blocking capacitor C2.
5. The novel S-band low-cost high-efficiency broadband continuous wave power amplifier matching circuit according to claim 4, characterized in that: the pure microstrip circuit adopted by the transistor drain matching circuit is structurally characterized in that one side of a rectangular microstrip piece is connected with a triangular microstrip piece, and an access piece head is connected to the vertex angle of the triangular microstrip piece.
6. The novel S-band low-cost high-efficiency broadband continuous wave power amplifier matching circuit according to claim 1, characterized in that: the power amplifier tube is a broadband GaN power amplifier tube CGH 40045F.
7. The novel S-band low-cost high-efficiency broadband continuous wave power amplifier matching circuit according to claim 1, characterized in that: the transistor grid matching circuit and the transistor drain matching circuit are processed by adopting the thickness of 1 ounce copper, and the two circuits are arranged on the grid and the drain of the corresponding power amplifier tube in a matching manner in the PCB design.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114513171A (en) * | 2022-02-15 | 2022-05-17 | 电子科技大学 | Low noise amplifier of S wave band based on HEMT |
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2020
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114513171A (en) * | 2022-02-15 | 2022-05-17 | 电子科技大学 | Low noise amplifier of S wave band based on HEMT |
| CN114513171B (en) * | 2022-02-15 | 2023-05-23 | 电子科技大学 | S-band low-noise amplifier based on HEMT |
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