CN111370502A - 太阳能电池模组及其制备方法和刻划设备 - Google Patents
太阳能电池模组及其制备方法和刻划设备 Download PDFInfo
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- CN111370502A CN111370502A CN201811589519.2A CN201811589519A CN111370502A CN 111370502 A CN111370502 A CN 111370502A CN 201811589519 A CN201811589519 A CN 201811589519A CN 111370502 A CN111370502 A CN 111370502A
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- 238000002360 preparation method Methods 0.000 title abstract description 6
- 238000010248 power generation Methods 0.000 claims abstract description 46
- 230000031700 light absorption Effects 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 230000000149 penetrating effect Effects 0.000 claims description 7
- 238000000059 patterning Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811589519.2A CN111370502A (zh) | 2018-12-25 | 2018-12-25 | 太阳能电池模组及其制备方法和刻划设备 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811589519.2A CN111370502A (zh) | 2018-12-25 | 2018-12-25 | 太阳能电池模组及其制备方法和刻划设备 |
Publications (1)
Publication Number | Publication Date |
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CN111370502A true CN111370502A (zh) | 2020-07-03 |
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Family Applications (1)
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CN201811589519.2A Pending CN111370502A (zh) | 2018-12-25 | 2018-12-25 | 太阳能电池模组及其制备方法和刻划设备 |
Country Status (1)
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CN (1) | CN111370502A (zh) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201251097A (en) * | 2011-06-03 | 2012-12-16 | Jusung Eng Co Ltd | Solar cell and method for manufacturing the same |
CN202736954U (zh) * | 2012-06-27 | 2013-02-13 | 国电光伏(江苏)有限公司 | 一种点接触式高效薄膜太阳能组件 |
CN203895474U (zh) * | 2014-05-26 | 2014-10-22 | 北京恒基伟业投资发展有限公司 | 一种薄膜太阳能电池 |
CN104335351A (zh) * | 2012-04-12 | 2015-02-04 | 罗伯特·博世有限公司 | 光伏薄层太阳能模块以及用于制造这种薄层太阳能模块的方法 |
CN105580142A (zh) * | 2013-09-27 | 2016-05-11 | Lg伊诺特有限公司 | 太阳能电池 |
CN106876518A (zh) * | 2017-01-10 | 2017-06-20 | 深圳先进技术研究院 | 薄膜太阳能电池刻划装置及方法 |
-
2018
- 2018-12-25 CN CN201811589519.2A patent/CN111370502A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201251097A (en) * | 2011-06-03 | 2012-12-16 | Jusung Eng Co Ltd | Solar cell and method for manufacturing the same |
CN104335351A (zh) * | 2012-04-12 | 2015-02-04 | 罗伯特·博世有限公司 | 光伏薄层太阳能模块以及用于制造这种薄层太阳能模块的方法 |
CN202736954U (zh) * | 2012-06-27 | 2013-02-13 | 国电光伏(江苏)有限公司 | 一种点接触式高效薄膜太阳能组件 |
CN105580142A (zh) * | 2013-09-27 | 2016-05-11 | Lg伊诺特有限公司 | 太阳能电池 |
CN203895474U (zh) * | 2014-05-26 | 2014-10-22 | 北京恒基伟业投资发展有限公司 | 一种薄膜太阳能电池 |
CN106876518A (zh) * | 2017-01-10 | 2017-06-20 | 深圳先进技术研究院 | 薄膜太阳能电池刻划装置及方法 |
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Address after: 100076 6015, 6th floor, building 8, 9 Yingshun Road, Yinghai Town, Daxing District, Beijing Applicant after: Beijing Dingrong Photovoltaic Technology Co.,Ltd. Address before: 100176 Beijing Daxing District Beijing economic and Technological Development Zone Rongchang East Street 7 hospital 6 Building 3001 room. Applicant before: BEIJING APOLLO DING RONG SOLAR TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20210409 Address after: 518066 Room 201, building A, No. 1, Qian Wan Road, Qianhai Shenzhen Hong Kong cooperation zone, Shenzhen, Guangdong (Shenzhen Qianhai business secretary Co., Ltd.) Applicant after: Shenzhen Zhengyue development and Construction Co.,Ltd. Address before: 100076 6015, 6th floor, building 8, 9 Yingshun Road, Yinghai Town, Daxing District, Beijing Applicant before: Beijing Dingrong Photovoltaic Technology Co.,Ltd. |
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Effective date of registration: 20210914 Address after: 201203 3rd floor, no.665 Zhangjiang Road, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai Applicant after: Shanghai zuqiang Energy Co.,Ltd. Address before: 518066 Room 201, building A, No. 1, Qian Wan Road, Qianhai Shenzhen Hong Kong cooperation zone, Shenzhen, Guangdong (Shenzhen Qianhai business secretary Co., Ltd.) Applicant before: Shenzhen Zhengyue development and Construction Co.,Ltd. |
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