CN111355308A - Wireless energy supply flexible light-emitting system and preparation method of wireless energy receiving end device thereof - Google Patents
Wireless energy supply flexible light-emitting system and preparation method of wireless energy receiving end device thereof Download PDFInfo
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- H—ELECTRICITY
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Abstract
The present disclosure provides a wireless energy supply flexible lighting system and a method for manufacturing a wireless energy receiving end device thereof, wherein the wireless energy supply flexible lighting system comprises: the wireless energy transmitting terminal device is used for converting electric energy into electromagnetic wave energy which can be propagated in a free space; the wireless energy receiving end device is used for receiving the electromagnetic wave energy transmitted by the wireless energy transmitting end device, converting the received electromagnetic wave energy into electric energy and then driving the light source to emit light; the energy receiving device includes: the device comprises a substrate, an isolation layer, a passivation layer, a wireless energy receiving coil, an LED light-emitting chip, a capacitor and a Schottky diode, wherein the substrate, the isolation layer and the passivation layer are all flexible material layers. The resonant wireless energy transmission technology is utilized, the problem that a receiving end needs to be connected with a wire for power supply is avoided, and in addition, the wireless energy receiving end device adopts the flexible material layer with low Young modulus, so that the wireless energy receiving end device has good application prospect in the fields of ' electronic skin ', ' optogenetic probe ', human artificial limb ' and the like which need light source stimulation.
Description
Technical Field
The disclosure relates to the field of flexible light-emitting equipment, in particular to a wireless energy supply flexible light-emitting system and a preparation method of a wireless energy receiving end device thereof.
Background
In optogenetics, optical fiber connection is firstly adopted, but when a living body group experiment or an outdoor experiment scene, an underwater experiment scene and the like are researched, the range of animal motion is limited by the optical fiber connection, and in the group experiment, the risk that optical fibers are wound, knotted and twisted and broken exists. Then, an attempt is made to supply power to the light source by using wireless energy, but since the experimental device needs to be placed on the brain of the animal, if the experimental device is exposed outside, the animal is easy to knock itself or during the activity. Based on the problem, a solution is proposed that the device can be completely implanted under the skin of an animal if the device can be miniaturized, but because the brain of the animal is relatively soft, if the implanted device is made of hard materials such as a PCB (printed Circuit Board), the problems of immune reaction and inflammation of the animal are caused, and the application of the flexible materials based on the problems is proposed.
In the research fields of electronic skin, artificial prosthesis and the like, the device is also required to have the characteristics of portability, skin adhesion, miniaturization, no electric leakage danger caused by a wire and the like, and a wireless power supply, flexible, safe, convenient and reliable system well meets the characteristics.
And at present, the semiconductor light-emitting chip (including most semiconductor chips) needs to be provided with metal electrode contacts on the chip. In the manufacturing process of the light-emitting device, in order to facilitate processes such as gold wire bonding in the subsequent packaging process, the area of the metal electrode on the chip at least needs to reach the size of a circle with the diameter of 80 μm, but one light-emitting device comprises a positive and a negative electric contact points, so at least 2 metal electrodes with the same size need to be prepared. However, the technical research of the micro light-emitting chip has a great technical difficulty, and as the research and development size of the chip is continuously reduced, the situation that the surface of the chip only has a metal electrode and a light-emitting area is very small or even none occurs at last; however, in the LED packaging process, the LED needs to be electrically injected by gold wire, so that the metal electrode is indispensable, and the existence of the metal electrode hinders further miniaturization research of the LED chip.
Disclosure of Invention
Technical problem to be solved
The present disclosure provides a wireless energy supply flexible lighting system and a method for manufacturing a wireless energy receiving end device thereof, so as to at least partially solve the above-mentioned technical problems.
(II) technical scheme
According to an aspect of the present disclosure, there is provided a wirelessly powered flexible lighting system comprising: the wireless energy transmitting terminal device is used for converting electric energy into electromagnetic wave energy which can be propagated in a free space; the wireless energy receiving end device is used for receiving the electromagnetic wave energy transmitted by the wireless energy transmitting end device, converting the received electromagnetic wave energy into electric energy and then driving the light source to emit light; the energy receiving device includes: the substrate and the passivation layer are flexible material layers; a wireless energy receiving coil comprising: a first layer of coil metal grown on the substrate; and a second layer of coil metal grown on the first layer of coil metal; a first isolation layer grown on the substrate; the first isolation layer is a flexible material layer; the first isolation layer is adjacent to the first layer of coil metal; the second isolation layer grows on the first layer of coil metal, and the second layer of coil metal is isolated by the second isolation layer; the second isolation layer is a flexible material layer; and the LED light-emitting chip is transferred to the first isolation layer and is connected with the second layer of coil metal.
In some embodiments of the present disclosure, the energy receiving end apparatus further includes: the capacitor lower electrode metal layer grows on the substrate, and the first isolation layer is adjacent to the capacitor lower electrode metal layer at the same time; the capacitor dielectric layer grows on the capacitor lower electrode metal layer; the second capacitor upper electrode metal layer grows on the capacitor dielectric layer and is connected with the LED light-emitting chip; the third isolating layer grows on the capacitor dielectric layer and is adjacent to the second capacitor upper electrode metal layer; the third isolation layer is a flexible material layer.
In some embodiments of the present disclosure, further comprising: the Schottky diode u-GaN grows on the first isolating layer; the first capacitor upper electrode metal layer grows on the capacitor lower electrode metal layer; one end of the first capacitor upper electrode metal layer is connected with the Schottky diode u-GaN; the other end of the first capacitor upper electrode metal layer is adjacent to the third isolating layer; and the Schottky diode Schottky contact metal and the Schottky diode u-GaN are grown on the same first isolation layer and are connected with the Schottky diode u-GaN.
In some embodiments of the present disclosure, the LED light emitting chip size is 30 × 30 μm2-200×200μm2。
In some embodiments of the present disclosure, the size of the flexible material layer corresponding to the substrate, the isolation layer and the passivation layer is 2 × 2mm2-4×4mm2The thickness is 30-200 μm.
According to another aspect of the present disclosure, there is provided a method for manufacturing a wireless energy receiving end device, including: step S100: respectively manufacturing a first layer of coil metal and a patterned first isolation layer on a substrate; step S200: manufacturing a second patterned isolation layer on the first layer of coil metal; step S300: transferring the LED light-emitting chip onto the first isolation layer by a transfer printing method; step S400: manufacturing a second layer of coil metal on the first coil metal layer; the second layer of coil metal is connected with the LED light-emitting chip; step S500: a passivation layer is spin-coated on the structure of step S400 for protection.
In some embodiments of the present disclosure, step S100 further includes: manufacturing a capacitor lower electrode metal layer on the substrate; manufacturing a capacitor dielectric layer on the prepared capacitor lower electrode metal layer; step S200 further includes: manufacturing a third graphical isolation layer on the capacitor dielectric layer; step S400 further includes: and manufacturing a second capacitor upper electrode metal layer on the capacitor dielectric layer.
In some embodiments of the present disclosure, step S300 further includes: transferring the Schottky diode u-GaN to the first isolation layer by a transfer method; step S400 further includes: manufacturing Schottky contact metal of a Schottky diode on the first isolation layer; and manufacturing a first capacitor upper electrode metal layer on the capacitor lower electrode metal layer.
(III) advantageous effects
According to the technical scheme, the preparation method of the wireless energy supply flexible light-emitting system and the wireless energy receiving end device thereof disclosed by the invention has at least one or part of the following beneficial effects:
(1) the substrate, the isolation layer and the passivation layer are made of flexible material layers, so that the substrate, the isolation layer and the passivation layer can be in contact with soft biological tissues and organs, have good shape retention and compatibility, can reduce the damage to brain tissues when the device is implanted and moved, and can also reduce the tissue immune response and the generated inflammation.
(2) The wireless energy receiving coil provided by the disclosure reduces the metal coverage area by utilizing a wireless energy supply mode and increases the light emitting area of the chip.
(3) The chip size is effectively reduced in the present disclosure.
(4) The method has the advantages of simple process flow, high yield, low cost of a single device, economy, practicability and high reliability.
Drawings
Fig. 1 is an equivalent circuit diagram of a wireless-powered flexible lighting system according to an embodiment of the present disclosure.
Fig. 2 is a side cross-sectional view of a wireless energy receiving end device of the wireless powered flexible lighting system of fig. 1.
Fig. 3 is a method for manufacturing a wireless energy receiving end device according to an embodiment of the disclosure.
[ description of main reference numerals in the drawings ] of the embodiments of the present disclosure
10-a wireless energy receiving end device;
20-a wireless energy transmitting end device;
100-a substrate;
101-a first layer of coil metal;
102-a capacitor lower electrode metal layer;
1031-a first spacer layer;
1032-a second spacer;
1033-a third isolation layer;
104-a capacitor dielectric layer;
201-schottky diode u-GaN;
2021-first capacitor top electrode metal layer;
2022-second capacitor top electrode metal layer;
203-second layer of coil metal;
204-schottky diode schottky contact metal;
205-LED light emitting chip;
301-passivation layer.
Detailed Description
The present disclosure provides a wireless energy supply flexible lighting system and a method for manufacturing a wireless energy receiving end device thereof, wherein the wireless energy supply flexible lighting system comprises: the wireless energy transmitting terminal device is used for converting electric energy into electromagnetic wave energy which can be propagated in a free space; the wireless energy receiving end device is used for receiving the electromagnetic wave energy transmitted by the wireless energy transmitting end device, converting the received electromagnetic wave energy into electric energy and then driving the light source to emit light; the energy receiving device includes: the device comprises a substrate, an isolation layer, a passivation layer, a wireless energy receiving coil, an LED light-emitting chip, a capacitor and a Schottky diode, wherein the substrate, the isolation layer and the passivation layer are all flexible material layers. The resonant wireless energy transmission technology is utilized, the problem that a receiving end needs to be connected with a wire for power supply is avoided, and in addition, the wireless energy receiving end device adopts the flexible material layer with low Young modulus, so that the wireless energy receiving end device has good application prospect in the fields of ' electronic skin ', ' optogenetic probe ', human artificial limb ' and the like which need light source stimulation.
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
Certain embodiments of the present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments of the disclosure are shown. Indeed, various embodiments of the disclosure may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will satisfy applicable legal requirements.
In a first exemplary embodiment of the present disclosure, a wirelessly powered flexible lighting system is provided. Fig. 1 is an equivalent circuit diagram of a wireless-powered flexible lighting system according to an embodiment of the present disclosure. As shown in fig. 1, the disclosed wireless-powered flexible lighting system includes: a wireless energy transmitting end device 20 and a wireless energy receiving end device 10. The wireless energy transmitting terminal device 20 is used for converting electric energy into electromagnetic wave energy which can propagate in free space; the wireless energy receiving end device 10 comprises a wireless energy receiving coil, a light emitting source and a multiplying and rectifying circuit composed of a capacitor and a diode, and is used for receiving electromagnetic wave energy emitted by the wireless energy emitting end device 20, converting the electromagnetic wave energy received by the wireless energy receiving coil into electric energy, and then driving the light emitting source to emit light. In fig. 1, a quadruple rectifier circuit is provided, which rectifies the alternating current received by the wireless energy receiving coil into direct current, multiplies the direct current by four, and supplies power to the light emitting source. The metal coverage area is reduced by utilizing a wireless energy supply mode, and the light emitting area of the chip is increased; in addition, the wireless energy supply optical stimulation device is more convenient for behavioral research, and is not like the situation that the behavior and the range of motion of experimental animals are limited due to the connection of optical fibers. It will be appreciated by those skilled in the art that the quadruple rectifier circuit is provided as an example, and may be adjusted according to the situation in the specific implementation, and may be a 2-fold, 3-fold or other multiplying rectifier circuit.
Fig. 2 is a side cross-sectional view of a wireless energy receiving end device of the wireless powered flexible lighting system of fig. 1. As shown in fig. 2, the wireless energy receiving apparatus 10 includes: a substrate 100 and a passivation layer 301, a wireless energy receiving coil and an LED light emitting chip 205, all of which are layers of flexible material. Wherein the wireless energy receiving coil comprises: a first layer of coil metal 101 and a second layer of coil metal 203. A first layer of coil metal 101 is grown on the substrate 100. A second layer of coil metal 203 is grown on the first layer of coil metal 101. A first isolation layer 1031 is grown on the substrate 100; the first isolation layer 1031 is adjacent to the first layer coil metal 101; the second isolation layer 1032 is grown on the first layer coil metal 101, and the second layer coil metal 203 is isolated by the second isolation layer 1032. The substrate 100, the first isolation layer 1031, the second isolation layer 1032 and the passivation layer 301 are all flexible material layers, and here, the flexible material may be any one of flexible materials such as PET, PI, PDMS, SU-8 photoresist, and the like. Specifically, the number of the wireless energy receiving coils is generally one, but in some embodiments, a plurality of wireless energy receiving coils may be connected in parallel, and generally about 3 wireless energy receiving coils are connected in parallel. The LED light emitting chip 205 is transferred onto the first isolation layer 1031 and connected to the second layer coil metal 203. It should be noted that the amount of the first isolation layer 1031 grown on the substrate 100 needs to be adjusted according to the devices prepared on the substrate, and the function of the first isolation layer 1031 is to isolate adjacent devices grown on the substrate 100. The substrate 100, the isolation layer 103 and the passivation layer 301 are made of flexible material layers, so that the flexible material layers can be in contact with soft biological tissues and organs, have good shape retention and compatibility, can reduce the damage to brain tissues when a device is implanted and moved, can also reduce tissue immunoreaction and inflammation generated, and has good application prospects in the fields of ' electronic skin ', ' optogenetic probes ', human artificial limbs ' and the like which need light source stimulation.
Further, still include: a capacitor lower electrode metal layer 102, a capacitor dielectric layer 104, a first capacitor upper electrode metal layer 2021, and a second capacitor upper electrode metal layer 2022. Wherein the capacitor bottom electrode metal layer 102 is grown on the substrate 100, and the first isolation layer 1031 is simultaneously formed with the capacitor bottom electrode metal layer]02 are adjacent. First capacitor upper electrode metal layer 2021 and capacitor dielectric layer]04 is grown on the capacitor bottom electrode metal layer 102. The second capacitor upper electrode metal layer 2022 is grown on the capacitor dielectric layer 104, and is connected to the LED light emitting chip 205. A third isolation layer 1033 is grown on the capacitor dielectric layer 104, and the third isolation layer 1033 and the first capacitor top electrode metal layer 1021 and the second capacitor top electrode metal layer 1021 at the same timeThe capacitor top electrode metal layer 1022 is adjacent to the third isolation layer 1033, which is a flexible material layer, and in particular, the capacitor region is typically formed to have a size of 30 × 30 μm or 30 μm2-200×200μm2. The number of capacitor regions is generally 1-5. It will be appreciated by those skilled in the art that the foregoing is merely preferred data and is not limiting in scope.
The Schottky diode further comprises a Schottky diode u-GaN201, a first capacitor upper electrode metal layer and a Schottky diode Schottky contact metal 204, wherein the Schottky diode u-GaN201 is transferred onto a first isolation layer 1031, the first capacitor upper electrode metal layer is grown on the capacitor lower electrode metal layer, one end of the first capacitor upper electrode metal layer is connected with the Schottky diode u-GaN201, the other end of the first capacitor upper electrode metal layer is adjacent to the third isolation layer, the Schottky diode Schottky contact metal 204 and the Schottky diode u-GaN201 are grown on the same first isolation layer 1031, and the Schottky diode Schottky contact metal 204 is connected with the Schottky diode u-GaN 201. concretely, the size of the formed Schottky diode region is generally 100 × 100 mu m2-200×200μm2. The number of schottky diode regions is generally selected to be 1 to 5. It will be appreciated by those skilled in the art that the foregoing is merely preferred data and is not limiting in scope.
Further, the LED light emitting chip 205 has a size of 30 × 30 μm2-200×200μm2. The miniaturized LED light-emitting chip 205 ensures that the device has the advantages of strong light intensity and small heat emission, and simultaneously has the micron2For example, 50 × 50 μm is favorable for single cell stimulation2The light intensity of the LED light-emitting chip 205 can reach 150mW/mm under the current of 1mA2About 1mW/mm which is far higher than the stimulation threshold of optogenetic opsin ChR22。
Specifically, the size of the flexible material layer corresponding to the substrate 100, the isolation layer 103 and the passivation layer 301 is 2 × 2mm2-4×4mm2The thickness is 30-200 μm. The shape may be square, circular, rectangular, etc. without limitation.
In a first exemplary embodiment of the present disclosure, there is also provided a method for preparing a wireless energy receiving end device, including:
step S100: a first coil metal layer 101 and a capacitor lower electrode metal layer 102 are sequentially formed on a substrate 100. Further, a capacitor dielectric layer 104 is formed on the capacitor lower electrode metal layer 102.
Specifically, the fabrication of the first layer coil metal 101 includes: spin-coating a photoresist on the substrate 100, and forming a first patterned photoresist after exposure, development and baking; plating metal by Plasma Enhanced Chemical Vapor Deposition (PECVD), sputtering (sputter), electron beam Evaporation (EB), Atomic Layer Deposition (ALD) and the like; finally, a first layer of coil metal 101 is formed on the substrate 100 after stripping, chemical etching, reactive ion beam etching and cleaning. Wherein. The first layer coil metal 101 is made of one or any combination of Cu, Al, Pt, Au, Cr, Ti and Ni.
Specifically, the manufacturing of the capacitor lower electrode metal layer 102 includes: on the basis of the manufactured first layer of coil metal 101, photoresist is coated on the substrate 100 in a spinning mode again, and the second patterned photoresist is formed after exposure, development and baking; and plating metal by Plasma Enhanced Chemical Vapor Deposition (PECVD), sputtering (sputter), electron beam Evaporation (EB), Atomic Layer Deposition (ALD), and the like, and finally forming a capacitor lower electrode metal layer 102 on the substrate 100 after stripping, chemical corrosion, reactive ion beam etching, and cleaning. The capacitor lower electrode metal layer 102 is made of one or any combination of Cu, Al, Pt, Au, Cr, Ti, and Ni.
Specifically, the manufacturing of the capacitor dielectric layer 104 on the capacitor lower electrode metal layer 102 includes: after the first layer of coil metal 101 and the capacitor lower electrode metal layer 102 are manufactured, photoresist is coated on the substrate 100 in a spinning mode again, and third patterned photoresist is formed after exposure, development and baking; and then an insulating dielectric layer is plated through sputtering or atomic layer deposition, and a capacitor dielectric layer 104 is formed on the capacitor lower electrode metal layer 102 after stripping, chemical corrosion and cleaning. Wherein, the capacitor dielectric layer 104 is made of Ta2O5、Si3N4、SiO2、TiO2One of PET, PDMS or any combination thereof.
Step S200: patterned first isolation layers 1031 are respectively formed on the substrate 100, the first coil metal layer and the capacitor dielectric layer 104.
Specifically, a flexible first isolation layer 1031 is spin-coated on the basis of step S100, and then a patterned first isolation layer 1031 is formed by photolithography. The first isolation layer 1031 is made of one or any combination of SU-8, PET, PDMS, PI, and AZ photoresist.
Step S300: the LED light emitting chip 205 and the schottky diode u-GaN201 are transferred onto the first isolation layer 1031 by a transfer method.
Specifically, the LED light emitting chip 205 and the schottky diode u-GaN201 are transferred onto the first isolation layer 1031 by a transfer method. Wherein. The LED light emitting chip 205 may be selected from one or any combination of light emitting chips from near infrared to near ultraviolet bands.
Step S400: a second layer of coil metal 203, a first capacitor upper electrode metal layer 2021, a second capacitor upper electrode metal layer 2022, and a schottky diode schottky contact metal 204 are fabricated on the structure of step S300. It should be understood by those skilled in the art that the first capacitor upper electrode metal layer 2021 may also serve as an ohmic contact metal for the schottky diode.
Specifically, photoresist is spin-coated on the substrate 100 again, and a fourth patterned photoresist is formed after exposure, development and baking; and then plating metal by Plasma Enhanced Chemical Vapor Deposition (PECVD), sputtering (sputter), electron beam Evaporation (EB), Atomic Layer Deposition (ALD), and the like, and forming a second layer of coil metal 203 and a first capacitor upper electrode metal layer 2021 by stripping, chemical corrosion, reactive ion beam etching, and cleaning. The second layer of coil metal 203 and the first capacitor upper electrode metal layer 2021 are made of one or any combination of Cu, Al, Pt, Au, Cr, Ti, and Ni. The second capacitor upper electrode metal layer 2022 and the third isolation layer 1033 are formed on the capacitor dielectric layer 104 by the same method, which is not described herein again. It should be understood that the second isolation layer 1032 and the third isolation layer 1033 are both referred to the method for preparing the first isolation layer 1031, and are not described herein.
Specifically, the schottky diode schottky contact metal 204 is fabricated on the isolation region, and includes: spin-coating photoresist on the first isolation layer 1031 again, and forming fifth patterned photoresist after exposure, development and baking; the schottky diode schottky contact metal 204 is formed by plating metal through Plasma Enhanced Chemical Vapor Deposition (PECVD), sputtering (sputter), electron beam Evaporation (EB), Atomic Layer Deposition (ALD), and the like, and then stripping, chemical etching, reactive ion beam etching, cleaning, and annealing. It should be understood by those skilled in the art that the metal for the ohmic contact can also be used for the capacitive bottom electrode metal layer 102, the first capacitive top electrode metal 2021, and the second capacitive top electrode metal 2022, but the metal for the schottky contact is different, and for the schottky diode u-GaN201, the metal for the schottky diode schottky contact metal 204 can be selected from one of Al, Ni, Au, Pt, Ir, Mo, Pd, Ti, W, or any combination thereof. Al/Ni/Au alloys are preferred.
Step S500: a passivation layer 301 is spin coated over the structure of step S400 as protection.
Specifically, a flexible passivation layer 301 is spin-coated on the basis of step S400 to serve as a protection layer of the device. The passivation layer 301 is made of one of SU-8, PET, PDMS, PI and AZ photoresists or any combination thereof. And after the passivation layer 301 is cured, the whole wireless energy receiving end device is prepared.
So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Further, the above definitions of the various elements and methods are not limited to the various specific structures, shapes or arrangements of parts mentioned in the examples, which may be easily modified or substituted by those of ordinary skill in the art.
From the above description, those skilled in the art should clearly understand that the wireless powered flexible lighting system and the method for manufacturing the wireless power receiving end device of the present disclosure.
In summary, the resonant wireless energy transmission technology is utilized in the present disclosure, so that the problem that the receiving end needs to be connected with a wire for power supply is avoided, and in addition, the wireless energy receiving end device adopts a flexible material layer with a low young's modulus, so that the wireless energy receiving end device has a good application prospect in the fields of' electronic skin ',' optogenetic probe ', human body artificial limb' and the like which need light source stimulation.
It should also be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", and the like, used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure.
And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
Unless otherwise indicated, the numerical parameters set forth in the specification and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by the present disclosure. In particular, all numbers expressing quantities of ingredients, reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term "about". Generally, the expression is meant to encompass variations of ± 10% in some embodiments, 5% in some embodiments, 1% in some embodiments, 0.5% in some embodiments by the specified amount.
Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify a corresponding element does not by itself connote any ordinal number of the element or any ordering of one element from another or the order of manufacture, and the use of the ordinal numbers is only used to distinguish one element having a certain name from another element having a same name.
In addition, unless steps are specifically described or must occur in sequence, the order of the steps is not limited to that listed above and may be changed or rearranged as desired by the desired design. The embodiments described above may be mixed and matched with each other or with other embodiments based on design and reliability considerations, i.e., technical features in different embodiments may be freely combined to form further embodiments.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that is, the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, disclosed aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (8)
1. A wirelessly powered flexible lighting system, comprising:
the wireless energy transmitting terminal device is used for converting electric energy into electromagnetic wave energy which can be propagated in a free space;
the wireless energy receiving end device is used for receiving the electromagnetic wave energy transmitted by the wireless energy transmitting end device, converting the received electromagnetic wave energy into electric energy and then driving the light source to emit light; the energy receiving device includes:
the substrate and the passivation layer are flexible material layers;
a wireless energy receiving coil comprising:
a first layer of coil metal grown on the substrate; and
a second layer of coil metal grown on the first layer of coil metal;
a first isolation layer grown on the substrate; the first isolation layer is a flexible material layer; the first isolation layer is adjacent to the first layer of coil metal;
the second isolation layer grows on the first layer of coil metal, and the second layer of coil metal is isolated by the second isolation layer; the second isolation layer is a flexible material layer; and
and the LED light-emitting chip is transferred to the first isolation layer and is connected with the second layer of coil metal.
2. The wirelessly-powered flexible lighting system of claim 1, wherein the energy-receiving end device further comprises:
the capacitor lower electrode metal layer grows on the substrate, and the first isolation layer is adjacent to the capacitor lower electrode metal layer at the same time;
the capacitor dielectric layer grows on the capacitor lower electrode metal layer;
the second capacitor upper electrode metal layer grows on the capacitor dielectric layer and is connected with the LED light-emitting chip;
the third isolating layer grows on the capacitor dielectric layer and is adjacent to the second capacitor upper electrode metal layer; the third isolation layer is a flexible material layer.
3. The wirelessly-powered flexible lighting system of claim 2, further comprising:
the Schottky diode u-GaN grows on the first isolating layer;
the first capacitor upper electrode metal layer grows on the capacitor lower electrode metal layer; one end of the first capacitor upper electrode metal layer is connected with the Schottky diode u-GaN; the other end of the first capacitor upper electrode metal layer is adjacent to the third isolating layer;
and the Schottky diode Schottky contact metal and the Schottky diode u-GaN are grown on the same first isolation layer and are connected with the Schottky diode u-GaN.
4. The wirelessly-powered flexible lighting system of claim 1 wherein the LED lighting chip size is 30 × 30 μ ι η2-200×200μm2。
5. The wirelessly powered flexible lighting system of claim 1, wherein the substrate, isolation layer, and passivation layer correspond to a flexible material layer size of 2 × 2mm2-4×4mm2The thickness is 30-200 μm.
6. A method for preparing a wireless energy receiving terminal device comprises the following steps:
step S100: respectively manufacturing a first layer of coil metal and a patterned first isolation layer on a substrate;
step S200: manufacturing a second patterned isolation layer on the first layer of coil metal;
step S300: transferring the LED light-emitting chip onto the first isolation layer by a transfer printing method;
step S400: manufacturing a second layer of coil metal on the first coil metal layer; the second layer of coil metal is connected with the LED light-emitting chip;
step S500: a passivation layer is spin-coated on the structure of step S400 for protection.
7. The wireless energy receiving terminal apparatus preparation method according to claim 6,
step S100 further includes: manufacturing a capacitor lower electrode metal layer on the substrate; manufacturing a capacitor dielectric layer on the prepared capacitor lower electrode metal layer;
step S200 further includes: manufacturing a third graphical isolation layer on the capacitor dielectric layer;
step S400 further includes: and manufacturing a second capacitor upper electrode metal layer on the capacitor dielectric layer.
8. The wireless energy receiving terminal apparatus preparation method according to claim 6,
step S300 further includes: transferring the Schottky diode u-GaN to the first isolation layer by a transfer method;
step S400 further includes: manufacturing Schottky contact metal of a Schottky diode on the first isolation layer; and manufacturing a first capacitor upper electrode metal layer on the capacitor lower electrode metal layer.
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