CN103301576A - Implantable multimodal neuromodulation electrode based on photoelectric technology and manufacturing method thereof - Google Patents
Implantable multimodal neuromodulation electrode based on photoelectric technology and manufacturing method thereof Download PDFInfo
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- CN103301576A CN103301576A CN2013101994912A CN201310199491A CN103301576A CN 103301576 A CN103301576 A CN 103301576A CN 2013101994912 A CN2013101994912 A CN 2013101994912A CN 201310199491 A CN201310199491 A CN 201310199491A CN 103301576 A CN103301576 A CN 103301576A
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Abstract
The invention discloses an implantable multimodal neuromodulation electrode based on a photoelectric technology and a manufacturing method thereof. The implantable multimodal neuromodulation electrode based on the photoelectric technology comprises a base, wherein the base is provided with an electric simulation contact and a light simulation contact; the light simulation contact comprises a light emitting diode; and the light emitting diode comprises an external n electrode, a middle light emitting layer and an internal p electrode. According to the implantable multimodal neuromodulation electrode provided by the invention, electric simulation, light simulation or electric and light combined simulation can be carried out on nerve tissues through adjusting the simulation modes according to different disease cases, so as to reach an optimized treatment effect. The preparation technique provided by the invention is simple, the precision is high, the repeatability is good, and moreover, the unit quantity can be increased through further reducing the size of the simulation unit, thereby improving the resolution, thus, the neuromodulation electrode and the manufacturing method thereof can be widely used for neuroscience research, developing more accurate and more reliable neuromodulation technology in clinical study, researching mechanisms of nervous system diseases such as Parkinson and epilepsy.
Description
Technical field
The present invention relates to a kind of neuromodulation electrode, be specifically related to a kind of multi-modal implantable nerve regulation and control electrode and manufacture method based on photoelectric technology.
Background technology
Neuromodulation refers to specific part nervous tissue or function nuclear group are applied stimulation (photostimulation or electricity irritation), thereby reach the purpose for the treatment of or alleviation and neural diseases related, alleviation and the treatment of the central nervous system disease such as be successfully applied to parkinson, epilepsy at present, tremble.
The stimulating electrode overwhelming majority of present clinical use and bibliographical information can only be carried out single electrical stimulation pattern, can't realize that photostimulation or photoelectric combination stimulate.Along with the in recent years development of light sensation gene regulation technology, it is found that photostimulation can stimulate for specific neuron more accurately, may provide more efficiently therapeutic effect than electricity irritation.
The photostimulation electrode of bibliographical information mainly is the simple combination of microelectrode or microelectrode array and optical fiber at present, such as the coupling of optical fiber and tungsten electrode, Utah electrode or Michigan electrode.These electrodes all rest on the test level at present basically, can't test for a long time in free live body, realize stable light hereditism regulation and control and electrophysiological recording.In addition, optical fiber can only carry out the single-point photostimulation as stimulating light source, realize that the stimulation of multiple spot photostimulation and planar light faces very large difficulty.
Summary of the invention
For addressing the above problem, the purpose of this invention is to provide a kind of multi-modal implantable nerve regulation and control electrode and manufacture method based on photoelectric technology, have higher stimulation resolution, by gating local excitation contact, adjust light, electricity irritation zone, avoid mistake to stimulate and negative effect.
The apprizing system of sample treatment plant reaches above-mentioned technique effect for realizing above-mentioned technical purpose, and the present invention is achieved through the following technical solutions:
Multi-modal implantable nerve regulation and control electrode based on photoelectric technology, comprise substrate, be provided with an electricity irritation contact and a photostimulation contact in the described substrate, described photostimulation contact comprises light emitting diode, and described light emitting diode comprises luminescent layer and the inner p electrode at outside n electrode, middle part.
Make the described method of regulating and control electrode based on the multi-modal implantable nerve of photoelectric technology, may further comprise the steps:
Step 1) is utilized magnetron sputtering method depositing Al mask at silicon chip vacuum covering Parylene C material at Parylene C, and chemical wet etching is graphical, as the masking layer of etching ParyleneC;
Step 2) vacuum covering ParyleneC material on the said goods, the electron-beam evaporation metal platinum, utilize Lift-off technique graphical, realize that 16 stimulate the interconnected of contact and lead contact, vacuum covering ParyleneC protective layer material again, magnetron sputtering deposition of aluminum, graphical rear masking layer as oxyanion precursor etching ParyleneC, remove ParyleneC, make the platinum lead contact exposed out, the release plane thin film, and utilize dry etching technology to remove back side Parylene C, making stimulates the contact exposed, removes masking layer metal A l, finally obtains the fexible film electrod-array of 16 described electricity irritation contacts of three layers;
Step 3) adopts the direct transition shaped material of InGaAlP, emission wavelength is 590nm, utilize the metal-organic chemical vapor deposition equipment method at the GaAs based end epitaxial growth n-InGaAlP successively, InGaAlP active area, p-InGaAlP, and GaP window region, the p electrode adopts Ti/Pt/Au film system, and by the sputtering method preparation, the n electrode adopts Ni/Ge/Au film system, made by electron beam evaporation equipment, get luminescence chip;
Step 4) sticks on step 2 by micro-processing technology with described luminescence chip) in the ad-hoc location of fexible film electrod-array, namely get final products.
The invention has the beneficial effects as follows:
1, the present invention can adjust stimulus modelity according to different state of an illness cases, and nervous tissue is carried out electricity irritation, photostimulation or combination of stimulation, to reach the therapeutic effect of optimization, by changing photostimulation unit luminescent material band system, adjust emission wavelength, the Optimum Regulation effect;
2, preparation technology of the present invention is simple, precision is high, good reproducibility, and can further by reduce the stimulating unit size, increase number of unit, thereby improve resolution, be widely used in Neuroscience Research, such as the generation of exploring mechanism that memory occurs and transmit, emotion at basic neurobiological study and control etc., in the more accurate reliable neuromodulation technology of clinical research development, study the mechanism of the nervous system disease such as parkinson, epilepsy.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of description, below with preferred embodiment of the present invention and cooperate accompanying drawing to be described in detail as follows.The specific embodiment of the present invention is provided in detail by following examples and accompanying drawing thereof.
Description of drawings
Fig. 1 is structural representation of the present invention;
Fig. 2 is top view of the present invention;
Fig. 3 is left view of the present invention.
The number in the figure explanation:
1, electricity irritation contact, 2, the photostimulation contact, 3, substrate, 4, light emitting diode, 5, the n electrode, 6, luminescent layer, 7, the p electrode.
The specific embodiment
Below with reference to the accompanying drawings and in conjunction with the embodiments, describe the present invention in detail.
Referring to Fig. 1, Fig. 2, shown in Figure 3, multi-modal implantable nerve regulation and control electrode based on photoelectric technology, comprise substrate 3, be provided with 16 electricity irritation contacts 1 and 9 photostimulation contacts 2 in the described substrate 3, described photostimulation contact 2 comprises light emitting diode 4, and described light emitting diode 4 comprises luminescent layer 6 and the inner p electrode 7 at outside n electrode 5, middle part.
Make the described method of regulating and control electrode based on the multi-modal implantable nerve of photoelectric technology, may further comprise the steps:
Step 1) is utilized magnetron sputtering method depositing Al mask at silicon chip vacuum covering Parylene C material at Parylene C, and chemical wet etching is graphical, as the masking layer of etching ParyleneC;
Step 2) vacuum covering ParyleneC material on the said goods, the electron-beam evaporation metal platinum, utilize Lift-off technique graphical, realize that 16 stimulate the interconnected of contact and lead contact, vacuum covering ParyleneC protective layer material again, magnetron sputtering deposition of aluminum, graphical rear masking layer as oxyanion precursor etching ParyleneC, remove ParyleneC, make the platinum lead contact exposed out, the release plane thin film, and utilize dry etching technology to remove back side Parylene C, making stimulates the contact exposed, removes masking layer metal A l, finally obtains the fexible film electrod-array of 16 described electricity irritation contacts 1 of three layers;
Step 3) adopts the direct transition shaped material of InGaAlP, emission wavelength is 590nm, utilize the metal-organic chemical vapor deposition equipment method at the GaAs based end epitaxial growth n-InGaAlP successively, InGaAlP active area, p-InGaAlP, and GaP window region, the p electrode adopts Ti/Pt/Au film system, and by the sputtering method preparation, the n electrode adopts Ni/Ge/Au film system, made by electron beam evaporation equipment, get luminescence chip;
Step 4) sticks on step 2 by micro-processing technology with described luminescence chip) in the ad-hoc location of fexible film electrod-array, namely get final products.
The above only for the preferred embodiment of invention, is not limited to the present invention, and for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (2)
1. regulate and control electrode based on the multi-modal implantable nerve of photoelectric technology, comprise substrate (3), it is characterized in that: be provided with 16 electricity irritation contacts (1) and 9 photostimulation contacts (2) in the described substrate (3), described photostimulation contact (2) comprises light emitting diode (4), and described light emitting diode (4) comprises luminescent layer (6) and the inner p electrode (7) at outside n electrode (5), middle part.
2. make the method for regulating and control electrode based on the multi-modal implantable nerve of photoelectric technology claimed in claim 1, it is characterized in that, may further comprise the steps:
Step 1) is utilized magnetron sputtering method depositing Al mask at silicon chip vacuum covering Parylene C material at Parylene C, and chemical wet etching is graphical, as the masking layer of etching ParyleneC;
Step 2) vacuum covering ParyleneC material on the said goods, the electron-beam evaporation metal platinum, utilize Lift-off technique graphical, realize that 16 stimulate the interconnected of contact and lead contact, vacuum covering ParyleneC protective layer material again, magnetron sputtering deposition of aluminum, graphical rear masking layer as oxyanion precursor etching ParyleneC, remove ParyleneC, make the platinum lead contact exposed out, the release plane thin film, and utilize dry etching technology to remove back side Parylene C, making stimulates the contact exposed, removes masking layer metal A l, finally obtains the fexible film electrod-array of 16 described electricity irritation contacts (1) of three layers;
Step 3) adopts the direct transition shaped material of InGaAlP, emission wavelength is 590nm, utilize the metal-organic chemical vapor deposition equipment method at the GaAs based end epitaxial growth n-InGaAlP successively, InGaAlP active area, p-InGaAlP, and GaP window region, the p electrode adopts Ti/Pt/Au film system, and by the sputtering method preparation, the n electrode adopts Ni/Ge/Au film system, made by electron beam evaporation equipment, get luminescence chip;
Step 4) sticks on step 2 by micro-processing technology with described luminescence chip) in the ad-hoc location of fexible film electrod-array, namely get final products.
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| CN105428488A (en) * | 2015-12-28 | 2016-03-23 | 上海交通大学 | Light-stimulated neural electrode device based on golden wire ball bonding method and manufacturing method thereof |
| CN105477780A (en) * | 2015-12-01 | 2016-04-13 | 中国科学院苏州生物医学工程技术研究所 | Implantable neuro-stimulation and recording photoelectrode and manufacturing method thereof |
| CN106175701A (en) * | 2016-09-30 | 2016-12-07 | 中国科学院电子学研究所 | A kind of nerve information photoelectricity regulation and control and bimodulus detecting system |
| CN106308754A (en) * | 2016-09-18 | 2017-01-11 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | Implantable miniature LED neurological probe |
| CN106650903A (en) * | 2017-01-20 | 2017-05-10 | 上海伊诺尔信息技术有限公司 | All-aluminum intelligent card module and manufacturing method thereof |
| CN111938626A (en) * | 2020-08-10 | 2020-11-17 | 中国科学院上海微系统与信息技术研究所 | Flexible implantable nerve photoelectric electrode and preparation method thereof |
| CN112451854A (en) * | 2020-12-01 | 2021-03-09 | 中国康复研究中心 | Implanted diaphragm pacemaker and control method thereof |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105477780A (en) * | 2015-12-01 | 2016-04-13 | 中国科学院苏州生物医学工程技术研究所 | Implantable neuro-stimulation and recording photoelectrode and manufacturing method thereof |
| CN105428488A (en) * | 2015-12-28 | 2016-03-23 | 上海交通大学 | Light-stimulated neural electrode device based on golden wire ball bonding method and manufacturing method thereof |
| CN105428488B (en) * | 2015-12-28 | 2018-04-17 | 上海交通大学 | A kind of light stimulus nerve electrode device based on gold wire ball welding method and preparation method thereof |
| CN106308754A (en) * | 2016-09-18 | 2017-01-11 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | Implantable miniature LED neurological probe |
| CN106175701A (en) * | 2016-09-30 | 2016-12-07 | 中国科学院电子学研究所 | A kind of nerve information photoelectricity regulation and control and bimodulus detecting system |
| CN106650903A (en) * | 2017-01-20 | 2017-05-10 | 上海伊诺尔信息技术有限公司 | All-aluminum intelligent card module and manufacturing method thereof |
| CN111938626A (en) * | 2020-08-10 | 2020-11-17 | 中国科学院上海微系统与信息技术研究所 | Flexible implantable nerve photoelectric electrode and preparation method thereof |
| CN112451854A (en) * | 2020-12-01 | 2021-03-09 | 中国康复研究中心 | Implanted diaphragm pacemaker and control method thereof |
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Application publication date: 20130918 |