CN111354800A - Color solar cell and preparation method thereof - Google Patents

Color solar cell and preparation method thereof Download PDF

Info

Publication number
CN111354800A
CN111354800A CN201811566689.9A CN201811566689A CN111354800A CN 111354800 A CN111354800 A CN 111354800A CN 201811566689 A CN201811566689 A CN 201811566689A CN 111354800 A CN111354800 A CN 111354800A
Authority
CN
China
Prior art keywords
layer
solar cell
thickness
depositing
color
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201811566689.9A
Other languages
Chinese (zh)
Inventor
张德忠
王雪戈
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hongyi Technology Co.,Ltd.
Original Assignee
Beijing Apollo Ding Rong Solar Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Apollo Ding Rong Solar Technology Co Ltd filed Critical Beijing Apollo Ding Rong Solar Technology Co Ltd
Priority to CN201811566689.9A priority Critical patent/CN111354800A/en
Publication of CN111354800A publication Critical patent/CN111354800A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention relates to the field of solar cells, in particular to a color solar cell and a preparation method thereof. The invention provides a preparation method of a color solar cell, which comprises the following steps: depositing a cadmium sulfide buffer layer on the substrate deposited with the CIGS absorption layer, and changing the appearance color of the solar cell by adjusting the thickness of the cadmium sulfide buffer layer. The change of the appearance color of the battery is realized by controlling the thickness of the cadmium sulfide buffer layer, different thicknesses correspond to different colors, a color material does not need to be added on the packaging layer, the light transmittance is not basically influenced, and the influence on the battery efficiency is small; the preparation method is simple, low in cost and good in effect.

Description

Color solar cell and preparation method thereof
Technical Field
The invention relates to the field of solar cells, in particular to a color solar cell and a preparation method thereof.
Background
In recent years, thin film solar cells have become a development trend in the photovoltaic industry, and have the advantages of saving materials, improving production rate, reducing transportation cost and the like. With the development of technology, higher and higher requirements on photovoltaic cell modules are put forward, photovoltaic modules with single power generation function cannot meet the market demand, the integration of photovoltaic and buildings is mature day by day, and the solar cells are required to have various colors to adapt to the aesthetic degree of buildings.
In thin film solar cells, Cu (In, Ga) Se2(CIGS) is one of the most advantageous thin-film solar cells as an absorber layer, and generally, flexible CIGS modules are single and have black appearance or black appearanceBlue black, which obviously does not meet the current market demands. Therefore, chinese patent document CN106847997A discloses a color solar cell, a manufacturing method, a cell module and PECVD equipment, wherein dislocation special gas pipelines with different and adjustable special gas flow rates are adopted to deposit silicon nitride antireflection films with different thicknesses on the front surface of a crystal silicon wafer, so as to manufacture color solar cells with different colors in the cell, wherein the colors in the cell can be customized according to design, and the cell has the advantages of good appearance effect, simple operation and high production efficiency. Chinese patent CN108493264A discloses a colored cadmium telluride thin-film solar cell and a preparation method thereof, which sequentially comprises a glass substrate layer, a transparent conductive film layer, a window layer, an absorption layer, a back contact layer, a back electrode layer, a packaging material layer and a backboard glass layer, wherein the glass substrate layer is made of common glass plated with a color layer or colored glass plated with an antireflection film, the common glass is ultra-white float glass, the colored glass is formed by adding related colorants into glass, and the color layer is formed by colored metals, metal compounds and the like through methods such as sputtering, evaporation, vapor deposition, screen printing and the like; the requirement of building appearance color can be met, and meanwhile, compared with the existing colorful crystalline silicon solar cell, the solar cell is low in cost, flexible and light in weight can be realized, the weak light power generation effect is better, and the solar cell is suitable for popularization and application. In summary, in the prior art, the thickness of the antireflection film is mainly controlled, or the glass with the corresponding color is used to change the color of the solar cell, but the change affects the transmittance of sunlight, so that the cell efficiency is reduced.
Disclosure of Invention
Therefore, the technical problem to be solved by the present invention is to overcome the defects that the methods for changing the color of the solar cell in the prior art all affect the light transmittance and reduce the cell efficiency, thereby providing a color solar cell and a method for manufacturing the same.
Therefore, the technical scheme of the invention is as follows:
a preparation method of a color solar cell is characterized by comprising the following steps:
depositing a cadmium sulfide buffer layer on the substrate deposited with the CIGS absorbing layer,
and changing the appearance color of the solar cell by adjusting the thickness of the cadmium sulfide buffer layer.
Preferably, the thickness of the cadmium sulfide buffer layer is 20-30 nm, 30-40 nm, 40-50 nm, 50-65 nm or 65-80 nm.
Preferably, the deposition method of the cadmium sulfide buffer layer is magnetron sputtering deposition or chemical water bath deposition.
Preferably, a step of forming a back electrode layer on the substrate is further included;
and forming a window layer on the cadmium sulfide buffer layer.
Preferably, the window layer is divided into two parts, one part is a transparent high-resistance layer, the materials are intrinsic zinc oxide and aluminum oxide, and the thickness is 10-50 nm; the other part is a transparent conductive layer made of AZO, ITO or FTO with a thickness of 100-1000 nm.
Preferably, the CIGS absorbing layer is deposited by thermal evaporation, magnetron sputtering, electrochemical or chemical water bath deposition;
the thickness of the CIGS absorber layer was 500-2000 nm.
Preferably, further comprising depositing a barrier layer between the substrate and the back electrode layer,
the barrier layer is made of molybdenum oxide, molybdenum nitride or metal chromium;
the thickness of the barrier layer is 50-500 nm.
Preferably, the method further comprises the step of depositing a 50-300 nm metal molybdenum layer on the other side of the substrate on which the barrier layer is deposited.
Preferably, the method further comprises the step of,
depositing a gate line electrode on the window layer; the method for depositing the grid line electrode is to evaporate or sputter a nickel-aluminum coating on the window layer by magnetron sputtering;
and packaging through the packaging layer.
The invention also provides a color solar cell which is prepared by adopting the preparation method.
The technical scheme of the invention has the following advantages:
1. according to the preparation method of the color solar cell, the cadmium sulfide buffer layer is deposited on the substrate deposited with the CIGS absorption layer, the thickness of the cadmium sulfide buffer layer is adjusted to change the appearance color of the solar cell, namely the internal structure of the cell is changed to adjust the color change of the cell, different thicknesses correspond to different colors, no color material is required to be added, the solar light transmittance is not influenced, and the influence on the cell efficiency is very small; and the process is simple, and the additional cost is not required.
2. According to the color solar cell provided by the invention, the metal molybdenum with the thickness of 50-300 nm is deposited on the back surface of the substrate, so that the surface of the film layer can be prevented from being scratched in the subsequent roll-to-roll deposition process.
Detailed Description
The following examples are provided to further understand the present invention, not to limit the scope of the present invention, but to provide the best mode, not to limit the content and the protection scope of the present invention, and any product similar or similar to the present invention, which is obtained by combining the present invention with other prior art features, falls within the protection scope of the present invention.
The examples do not show the specific experimental steps or conditions, and can be performed according to the conventional experimental steps described in the literature in the field. The reagents or instruments used are not indicated by manufacturers, and are all conventional reagent products which can be obtained commercially.
The following applications apply generally throughout the specification and claims, CIGS stands for copper indium gallium selenide; PET stands for polyethylene terephthalate; EVA represents an ethylene-vinyl acetate copolymer; DNP represents a polyolefin elastomer; AZO represents aluminum-doped zinc oxide; ITO represents indium tin oxide; FTO fluorine-doped tin oxide.
A preparation method of a color solar cell comprises the following steps:
depositing a cadmium sulfide buffer layer on the substrate deposited with the CIGS absorption layer, and changing the appearance color of the solar cell by adjusting the thickness of the cadmium sulfide buffer layer.
According to the preparation method of the color solar cell, the cadmium sulfide buffer layer is deposited on the substrate deposited with the CIGS absorption layer, the thickness of the cadmium sulfide buffer layer is adjusted to change the appearance color of the solar cell, namely the internal structure of the cell is changed to adjust the color change of the cell, different thicknesses correspond to different colors, no color material is required to be added, the solar light transmittance is not influenced, and the influence on the cell efficiency is very small; and the process is simple, and the additional cost is not required.
The cadmium sulfide buffer layer is formed by magnetron sputtering deposition or chemical water bath deposition, and the thickness of the cadmium sulfide buffer layer can be set to be 20-30 nm, 30-40 nm, 40-50 nm, 50-65 nm or 65-80 nm. The internal structure of the battery is changed by changing the thickness of the cadmium sulfide buffer layer, so that the appearance of different colors of the battery is changed. The solar cell has different thicknesses and corresponding different appearance colors, and when the thickness of the cadmium sulfide buffer layer is 20-30 nm, the appearance color of the solar cell is golden; when the thickness of the cadmium sulfide buffer layer is 30-40 nm, the appearance color of the solar cell is purple; when the thickness of the cadmium sulfide buffer layer is 40-50 nm, the appearance color of the solar cell is blue black; when the thickness of the cadmium sulfide buffer layer is 50-65 nm, the appearance color of the solar cell is green; when the thickness of the cadmium sulfide buffer layer is 65-80 nm, the appearance color of the solar cell is yellow.
Preferably, a step of forming a back electrode layer on the substrate is further included; and forming a window layer on the cadmium sulfide buffer layer.
Preferably, the material of the back electrode layer is molybdenum, gold or platinum, and the thickness is 100-1000 nm.
Preferably, the forming method of the back electrode layer is magnetron sputtering.
Preferably, the window layer is divided into two parts, one part is a transparent high-resistance layer, the materials are intrinsic zinc oxide and aluminum oxide, and the thickness is 10-50 nm; the other part is a transparent conductive layer made of AZO, ITO or FTO with a thickness of 100-1000 nm.
Preferably, the forming method of the window layer is magnetron sputtering.
Preferably, the CIGS absorbing layer is deposited by thermal evaporation, magnetron sputtering, electrochemical or chemical water bath deposition;
the thickness of the CIGS absorber layer was 500-2000 nm.
Preferably, the method for preparing the color solar cell further comprises depositing a barrier layer between the substrate and the back electrode layer,
the barrier layer is made of molybdenum oxide, molybdenum nitride or metal chromium;
the thickness of the barrier layer is 50-500 nm.
Preferably, the method further comprises the step of depositing a 50-300 nm metal molybdenum layer on the other side of the substrate on which the barrier layer is deposited. And the metal molybdenum layer is deposited, so that the surface of the film layer is prevented from being scratched in the subsequent roll-to-roll deposition process. In the invention, the barrier layer is deposited on the front surface of the substrate, and the metal molybdenum layer is deposited on the back surface of the substrate.
Preferably, the method for preparing the color solar cell further comprises,
depositing a gate line electrode on the window layer; the method for depositing the grid line electrode is to evaporate or sputter a nickel-aluminum coating on the window layer by magnetron sputtering; and packaging through the packaging layer. The nickel-aluminum plating layer can be a nickel-aluminum current grid line.
Preferably, the gate line electrode can be deposited by a method described in patent CN103390672B, and the cells are connected in series through the front plate cell thin film, and the detailed process is not described herein.
Preferably, the grid line electrodes divide the battery into sub-units of 0.001 to 0.01 square meter. The battery may be cut into several units by a cutting machine in the present invention.
Preferably, the packaging layer sequentially comprises a PET film, EVA, a front panel film, DNP and an aluminum back panel from top to bottom. The invention laminates and encapsulates the battery component by using the PET film, EVA, the front panel film, DNP and the aluminum back panel.
Preferably, the EVA material in the encapsulation layer may also be EVB or DNP.
Preferably, the DNP material in the encapsulation layer may also be EVA or EVB.
Preferably, the front plate film is a PET film with copper grid lines.
Preferably, the substrate material is stainless steel coil, polyimide or polyethylene terephthalate. The substrate material in the present invention is preferably a stainless steel coil, but is not limited to a stainless steel coil. Preferably, the width of the stainless steel coiled material is 330-1100 mm, and the thickness is 30-60 um.
The invention also provides a color solar cell which is prepared by adopting the preparation method.
The present invention will be further explained or illustrated below by way of specific examples, which should not be construed as limiting the scope of the invention.
Example 1
A color solar cell and a preparation method thereof are disclosed:
1) selecting a stainless steel coil material with the width of 330mm and the thickness of 60um as a substrate of the flexible battery;
depositing metal molybdenum with the thickness of 200nm on the back of the stainless steel substrate in a magnetron sputtering mode;
depositing molybdenum oxide with the thickness of 100nm on the front surface of a stainless steel substrate in a magnetron sputtering mode to form a barrier layer, and then depositing a back electrode metal molybdenum layer with the thickness of 200 nm;
depositing a 2000nm copper indium gallium selenide absorption layer in a thermal evaporation mode;
depositing a cadmium sulfide buffer layer through a chemical water bath; the thickness of the buffer layer was 25 nm.
Depositing a window layer by magnetron sputtering; the window layer material is divided into two parts, one part is intrinsic zinc oxide with the thickness of 50nm and is used as a transparent high-resistance layer, and the other part is aluminum-doped zinc oxide (AZO) with the thickness of 300nm and is used as a transparent conducting layer;
2) a front plate film, namely a PET film with copper grid lines, is used for connecting the batteries in series;
3) laminating and packaging the assembly through packaging materials; the packaging layer is sequentially made of a PET film, EVA, a front plate film, DNP and an aluminum back plate from top to bottom.
The prepared solar cell is a golden solar cell, and the cell efficiency is 15%.
Example 2
A color solar cell and a preparation method thereof are disclosed:
1) selecting a stainless steel coil material with the width of 330mm and the thickness of 60um as a substrate of the flexible battery;
depositing metal molybdenum with the thickness of 200nm on the back of the stainless steel substrate in a magnetron sputtering mode;
depositing molybdenum oxide with the thickness of 100nm on the front surface of a stainless steel substrate in a magnetron sputtering mode to form a barrier layer, and then depositing a back electrode metal molybdenum layer with the thickness of 200 nm;
depositing a 2000nm copper indium gallium selenide absorption layer in a thermal evaporation mode;
depositing a cadmium sulfide buffer layer through a chemical water bath; the thickness of the buffer layer was 50 nm.
Depositing a window layer by magnetron sputtering; the window layer material is divided into two parts, one part is intrinsic zinc oxide with the thickness of 50nm and is used as a transparent high-resistance layer, and the other part is aluminum-doped zinc oxide (AZO) with the thickness of 300nm and is used as a transparent conducting layer;
2) a front plate film, namely a PET film with copper grid lines, is used for connecting the batteries in series;
3) laminating and packaging the assembly through packaging materials; the packaging layer is sequentially made of a PET film, EVA, a front plate film, DNP and an aluminum back plate from top to bottom.
The prepared solar cell is a green solar cell, and the cell efficiency is 15.2%.
Example 3
A color solar cell and a preparation method thereof are disclosed:
1) selecting a stainless steel coil material with the width of 330mm and the thickness of 60um as a substrate of the flexible battery;
depositing metal molybdenum with the thickness of 200nm on the back of the stainless steel substrate in a magnetron sputtering mode;
depositing molybdenum oxide with the thickness of 100nm on the front surface of a stainless steel substrate in a magnetron sputtering mode to form a barrier layer, and then depositing a back electrode metal molybdenum layer with the thickness of 200 nm;
depositing a 2000nm copper indium gallium selenide absorption layer in a thermal evaporation mode;
depositing a cadmium sulfide buffer layer through a chemical water bath; the thickness of the buffer layer was 80 nm.
Depositing a window layer by magnetron sputtering; the window layer material is divided into two parts, one part is intrinsic zinc oxide with the thickness of 50nm and is used as a transparent high-resistance layer, and the other part is aluminum-doped zinc oxide (AZO) with the thickness of 300nm and is used as a transparent conducting layer;
2) a front plate film, namely a PET film with copper grid lines, is used for connecting the batteries in series;
3) laminating and packaging the assembly through packaging materials; the packaging layer is sequentially made of a PET film, EVA, a front plate film, DNP and an aluminum back plate from top to bottom.
The prepared solar cell is a yellow solar cell, and the cell efficiency is 13.8%.
Example 4
A color solar cell and a preparation method thereof are disclosed:
1) selecting a stainless steel coil material with the width of 1100mm and the thickness of 30um as a substrate of the flexible battery;
depositing metal molybdenum with the thickness of 50nm on the back of the stainless steel substrate in a magnetron sputtering mode;
depositing molybdenum nitride with the thickness of 500nm on the front surface of the stainless steel substrate in a magnetron sputtering mode to form a barrier layer, and then depositing a back electrode gold layer with the thickness of 100 nm;
depositing a 500nm copper indium gallium selenide absorption layer in a magnetron sputtering mode;
depositing a cadmium sulfide buffer layer by magnetron sputtering; the thickness of the buffer layer was 80 nm.
Depositing a window layer by magnetron sputtering; the window layer is made of a material which is divided into two parts, wherein one part is intrinsic zinc oxide with the thickness of 10nm and is used as a transparent high-resistance layer, and the other part is Indium Tin Oxide (ITO) with the thickness of 1000nm and is used as a transparent conducting layer;
2) evaporating a nickel-aluminum current grid line on the transparent window layer;
3) and (4) laminating and packaging the assembly by packaging materials.
The prepared solar cell is a yellow solar cell.
Example 5
A color solar cell and a preparation method thereof are disclosed:
1) polyimide with the width of 500mm and the thickness of 40um is selected as a substrate of the flexible battery;
depositing metal molybdenum with the thickness of 300nm on the back of the stainless steel substrate in a magnetron sputtering mode;
depositing a 100nm chromium layer on the front surface of a stainless steel substrate in a magnetron sputtering mode to form a barrier layer, and then depositing a back electrode platinum layer with the thickness of 800 nm;
depositing a 2000nm copper indium gallium selenide absorption layer in a chemical water bath mode;
depositing a cadmium sulfide buffer layer by magnetron sputtering; the thickness of the buffer layer is 55 nm;
depositing a window layer by magnetron sputtering; the window layer is made of two parts, wherein one part is an alumina layer with the thickness of 30nm and is used as a transparent high-resistance layer, and the other part is a fluorine-doped tin oxide (FTO) layer with the thickness of 300nm and is used as a transparent conducting layer;
2) evaporating a nickel-aluminum current grid line on the transparent window layer;
3) and performing lamination packaging on the assembly through packaging materials.
The prepared solar cell is a green solar cell.
Example 6
A color solar cell and a preparation method thereof are disclosed:
1) polyimide with the width of 600mm and the thickness of 50um is selected as a substrate of the flexible battery;
depositing metal molybdenum with the thickness of 200nm on the back of the stainless steel substrate in a magnetron sputtering mode;
depositing 100nm of molybdenum nitride on the front surface of a stainless steel substrate in a magnetron sputtering mode to form a barrier layer, and then depositing a back electrode metal molybdenum layer with the thickness of 200 nm;
depositing a 700nm copper indium gallium selenide absorption layer through a chemical water bath;
depositing a cadmium sulfide buffer layer in a chemical water bath mode; the thickness of the buffer layer is 38 nm;
depositing a window layer by magnetron sputtering; the window layer is made of two parts, wherein one part is an alumina layer with the thickness of 30nm and is used as a transparent high-resistance layer, and the other part is a fluorine-doped tin oxide (FTO) layer with the thickness of 300nm and is used as a transparent conducting layer;
2) a front plate film, namely a PET film with copper grid lines, is used for connecting the batteries in series;
3) carrying out lamination packaging on the assembly through packaging materials; the packaging material comprises a PET film, an EVB, a front panel film, EVA and an aluminum back panel from top to bottom in sequence.
The prepared solar cell is a purple solar cell.
Example 7
A color solar cell and a preparation method thereof are disclosed:
1) selecting 600mm wide and 40um thick polyethylene glycol terephthalate as a substrate of the flexible battery;
depositing metal molybdenum with the thickness of 100nm on the back of the stainless steel substrate in a magnetron sputtering mode;
depositing 100nm of molybdenum nitride on the front surface of a stainless steel substrate in a magnetron sputtering mode to form a barrier layer, and then depositing a back electrode metal molybdenum layer with the thickness of 500 nm;
depositing a 600nm copper indium gallium selenide absorption layer in an electrochemical mode;
depositing a cadmium sulfide buffer layer in a chemical water bath mode; the thickness of the buffer layer is 45 nm;
depositing a window layer by sputtering; the window layer is made of two parts, wherein one part is alumina with the thickness of 40nm and is used as a transparent high-resistance layer, and the other part is aluminum-doped zinc oxide (AZO) with the thickness of 200nm and is used as a transparent conductive layer;
2) a front plate film, namely a PET film with copper grid lines, is used for connecting the batteries in series;
3) carrying out lamination packaging on the assembly through packaging materials; the packaging material comprises a PET film, DNP, a front plate film, EVB and an aluminum back plate from top to bottom in sequence.
The prepared solar cell is a blue-black solar cell.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.

Claims (10)

1. A preparation method of a color solar cell is characterized by comprising the following steps:
depositing a cadmium sulfide buffer layer on the substrate deposited with the CIGS absorbing layer,
and changing the appearance color of the solar cell by adjusting the thickness of the cadmium sulfide buffer layer.
2. The method of claim 1, wherein the first and second substrates are different from each other,
the thickness of the cadmium sulfide buffer layer is 20-30 nm, 30-40 nm, 40-50 nm, 50-65 nm or 65-80 nm.
3. The method of claim 2, wherein the first and second substrates are different from each other,
the deposition method of the cadmium sulfide buffer layer is magnetron sputtering deposition or chemical water bath deposition.
4. The method for manufacturing a color solar cell according to claim 1, further comprising a step of forming a back electrode layer on the substrate;
and forming a window layer on the cadmium sulfide buffer layer.
5. The method for manufacturing a color solar cell according to claim 4,
the window layer is divided into two parts, one part is a transparent high-resistance layer made of intrinsic zinc oxide and aluminum oxide and the thickness of the window layer is 10-50 nm; the other part is a transparent conductive layer made of AZO, ITO or FTO with a thickness of 100-1000 nm.
6. The method for manufacturing a color solar cell according to claim 1, wherein the CIGS absorber layer is deposited by thermal evaporation, magnetron sputtering, electrochemical or chemical water bath deposition;
the thickness of the CIGS absorber layer was 500-2000 nm.
7. The method of claim 4, further comprising depositing a barrier layer between the substrate and the back electrode layer,
the barrier layer is made of molybdenum oxide, molybdenum nitride or metal chromium;
the thickness of the barrier layer is 50-500 nm.
8. The method of claim 7, further comprising depositing a 50-300 nm metal molybdenum layer on the other side of the substrate on which the barrier layer is deposited.
9. The method for manufacturing a color solar cell according to any one of claims 1 to 8, further comprising,
depositing a gate line electrode on the window layer; the method for depositing the grid line electrode is to evaporate or sputter a nickel-aluminum coating on the window layer by magnetron sputtering;
and packaging through the packaging layer.
10. A colored solar cell, characterized by being produced by the production method according to any one of claims 1 to 9.
CN201811566689.9A 2018-12-20 2018-12-20 Color solar cell and preparation method thereof Pending CN111354800A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811566689.9A CN111354800A (en) 2018-12-20 2018-12-20 Color solar cell and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811566689.9A CN111354800A (en) 2018-12-20 2018-12-20 Color solar cell and preparation method thereof

Publications (1)

Publication Number Publication Date
CN111354800A true CN111354800A (en) 2020-06-30

Family

ID=71196830

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811566689.9A Pending CN111354800A (en) 2018-12-20 2018-12-20 Color solar cell and preparation method thereof

Country Status (1)

Country Link
CN (1) CN111354800A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112652675A (en) * 2020-11-26 2021-04-13 龙焱能源科技（杭州）有限公司 Color film photovoltaic module and preparation method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1302090A (en) * 1999-12-27 2001-07-04 阿苏拉布股份有限公司 Photovoltaic cell with colour appearance special for dial
CN102544138A (en) * 2012-02-08 2012-07-04 南开大学 Copper indium gallium selenium thin film solar cell provided with aluminum nitride (AIN) thin film layer
CN105118883A (en) * 2015-07-29 2015-12-02 南京汉能薄膜太阳能有限公司 Low-cadmium CIGS-based thin-film solar cell and manufacturing method thereof
CN105720132A (en) * 2014-12-03 2016-06-29 中国电子科技集团公司第十八研究所 Alkali metal doping method for preparing CIGS absorbing layer on flexible substrate
CN106057928A (en) * 2016-07-27 2016-10-26 华南理工大学 Stainless steel flexible substrate copper-indium-gallium-selenium thin-film solar cell capable of blocking spread of iron effectively and preparation method thereof
CN109003885A (en) * 2018-07-04 2018-12-14 上海晶盟硅材料有限公司 Production method, epitaxial wafer and the semiconductor devices of twin polishing epitaxial wafer

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1302090A (en) * 1999-12-27 2001-07-04 阿苏拉布股份有限公司 Photovoltaic cell with colour appearance special for dial
CN102544138A (en) * 2012-02-08 2012-07-04 南开大学 Copper indium gallium selenium thin film solar cell provided with aluminum nitride (AIN) thin film layer
CN105720132A (en) * 2014-12-03 2016-06-29 中国电子科技集团公司第十八研究所 Alkali metal doping method for preparing CIGS absorbing layer on flexible substrate
CN105118883A (en) * 2015-07-29 2015-12-02 南京汉能薄膜太阳能有限公司 Low-cadmium CIGS-based thin-film solar cell and manufacturing method thereof
CN106057928A (en) * 2016-07-27 2016-10-26 华南理工大学 Stainless steel flexible substrate copper-indium-gallium-selenium thin-film solar cell capable of blocking spread of iron effectively and preparation method thereof
CN109003885A (en) * 2018-07-04 2018-12-14 上海晶盟硅材料有限公司 Production method, epitaxial wafer and the semiconductor devices of twin polishing epitaxial wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112652675A (en) * 2020-11-26 2021-04-13 龙焱能源科技（杭州）有限公司 Color film photovoltaic module and preparation method thereof

Similar Documents

Publication Publication Date Title
CN205863192U (en) A kind of silicon based hetero-junction solaode using double TCO film layer
CN103915516B (en) A kind of sodium doping method of CIGS base film photovoltaic material
US8088990B1 (en) Color building-integrated photovoltaic (BIPV) panel
US20140352751A1 (en) Solar cell or tandem solar cell and method of forming same
CN102270705B (en) Method for preparing transparent conductive electrode with dual-structure texture surface
CN104733557B (en) HIT solar energy battery and method for improving short-circuit current density of HIT battery
CN111048603B (en) Colorful copper indium gallium selenide thin-film solar cell and preparation method thereof
CN110310999A (en) The hetero-junction solar cell structure and preparation method thereof of gradual change lamination TCO conductive film
CN101908582A (en) Method for manufacturing transparent thin-film solar cell component
KR20090123645A (en) High-efficiency cigs solar cells and manufacturing method thereof
CN103022212A (en) Efficient and energy saving laminated thin-film solar cell and manufacturing method
CN101556977B (en) Film silicon photovoltaic device and manufacturing method, back electrode and photovoltaic component thereof
CN102437237A (en) Chalcopyrite type thin film solar cell and manufacturing method thereof
CN111354800A (en) Color solar cell and preparation method thereof
CN108735828A (en) A kind of hetero-junctions back contact solar cell and preparation method thereof
CN101556973B (en) Film photovoltaic device and composite electrode thereof
CN103872166A (en) Light trapping structure of copper indium gallium selenium thin film solar cell and preparation method thereof
CN106784113A (en) A kind of silicon based hetero-junction solar cell and preparation method thereof
CN207009459U (en) The silicon based hetero-junction solar cell that a kind of tow sides can generate electricity
US20110030760A1 (en) Photovoltaic device and method of manufacturing a photovoltaic device
CN102956722A (en) Thin-film solar cell
CN112216747B (en) Heterojunction solar cell and preparation method and application thereof
CN104882508A (en) Chalcopyrite type film photovoltaic cell and manufacturing method thereof
CN102064212B (en) Amorphous silicon film solar cell and preparation method thereof
CN112652675A (en) Color film photovoltaic module and preparation method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
CB02 Change of applicant information

Address after: 100076 6015, 6th floor, building 8, 9 Yingshun Road, Yinghai Town, Daxing District, Beijing

Applicant after: Beijing Dingrong Photovoltaic Technology Co.,Ltd.

Address before: 100176 3rd floor, 11th floor, Kangding Street, Daxing District, Beijing

Applicant before: BEIJING APOLLO DING RONG SOLAR TECHNOLOGY Co.,Ltd.

CB02 Change of applicant information
TA01 Transfer of patent application right

Effective date of registration: 20210425

Address after: 518000 Guangdong city of Shenzhen province Qianhai Shenzhen Hong Kong cooperation zone before Bay Road No. 1 building 201 room A (located in Shenzhen Qianhai business secretary Co. Ltd.)

Applicant after: Hongyi Technology Co.,Ltd.

Address before: 100076 6015, 6th floor, building 8, 9 Yingshun Road, Yinghai Town, Daxing District, Beijing

Applicant before: Beijing Dingrong Photovoltaic Technology Co.,Ltd.

TA01 Transfer of patent application right
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20200630

WD01 Invention patent application deemed withdrawn after publication