CN111354773A - 一种柔性显示面板的制作方法 - Google Patents
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Abstract
本申请公开了一种柔性显示面板的制作方法,包括以下步骤:提供柔性基板;在所述柔性基板上形成像素挡墙;所述像素挡墙围绕形成像素开口;采用喷墨打印技术在所述像素开口中依次形成阳极、空穴注入层、空穴传输层和钙钛矿量子点发光层。本申请提供的柔性显示面板的制作方法,降低了工艺难度,减小了生产成本和原料成本,提高了生产效率,也提高了柔性显示面板的弯折性能。
Description
技术领域
本申请涉及显示面板制作技术领域,尤其涉及一种柔性显示面板的制作方法。
背景技术
柔性显示面板是采用柔性材料制成的可弯折可变形的显示面板,具有低功率、体积小、轻便、安装简便、运输方便、显示方式多样和显示画质卓越等优点,主要应用在便携式电子设备和触摸式输入设备等,具有广阔的发展前景。
目前,柔性显示的主流技术的柔性OLED(Organic Light-Emitting Diode,有机发光二极管)显示,OLED具有主动发光的优势,无需背光源。与OLED相比,量子点发光二极管(Quantum Dot Light-Emitting Diode,QLED)也是一种主动发光的器件,其具有更好的稳定性和更高的色域,且易于制造成可弯曲可折叠的柔性屏幕。
钙钛矿材料是一种新型的发光材料,具有合成简单、尺寸可调、带隙可调、载流子迁移率高、发光效率高、半高宽窄以及色域广等优势。目前,基于钙钛矿材料的QLED的外量子发光效率已经超过20%,成为新一代显示发光技术极具潜力的材料。钙钛矿材料因为其优异的光电特性,已被广泛应用于显示发光器件,但是,大面积生产基于钙钛矿材料的柔性QLED的困难在于难以对其进行图案化。因此,需要寻找一种有效的方法制作基于钙钛矿材料的柔性QLED显示面板。
发明内容
本申请实施例提供一种柔性显示面板的制作方法,可以获得基于钙钛矿材料的弯折性能较好的柔性QLED显示面板。
本申请实施例提供一种柔性显示面板的制作方法,包括以下步骤:
提供柔性基板;
在所述柔性基板上形成像素挡墙;所述像素挡墙围绕形成像素开口;
采用喷墨打印技术在所述像素开口中依次形成阳极、空穴注入层、空穴传输层和钙钛矿量子点发光层。
在一实施例中,所述在所述柔性基板上形成像素挡墙,包括以下步骤:
在所述柔性基板上覆盖光阻层;
对所述光阻层进行图案化处理,形成像素挡墙。
在一实施例中,所述制作方法还包括以下步骤:
采用喷墨打印技术在所述钙钛矿量子点发光层上依次形成电子传输层和电子注入层。
在一实施例中,所述制作方法还包括以下步骤:
采用蒸镀法技术在所述钙钛矿量子点发光层上依次形成电子传输层和电子注入层。
在一实施例中,所述制作方法还包括以下步骤:
采用蒸镀法在所述电子注入层远离所述阳极的一侧形成阴极。
在一实施例中,所述阳极的材料包括纳米金、纳米银和碳电极中的任意一种。
在一实施例中,所述钙钛矿量子点发光层的材料包括有机无机杂化钙钛矿材料和无机钙钛矿材料中的任意一种。
在一实施例中,所述钙钛矿量子点发光层包括红色钙钛矿量子点发光层、绿色钙钛矿量子点发光层和蓝色钙钛矿量子点发光层中的任意一个。
在一实施例中,所述像素开口包括红色子像素开口、绿色子像素开口和蓝色子像素开口;
所述红色子像素开口中的所述钙钛矿量子点发光层为所述红色钙钛矿量子点发光层;所述绿色子像素开口中的所述钙钛矿量子点发光层为所述绿色钙钛矿量子点发光层;所述蓝色子像素开口中的所述钙钛矿量子点发光层为所述蓝色钙钛矿量子点发光层。
在一实施例中,所述柔性基板的材料包括聚酰亚胺、聚丙烯和聚氯乙烯中的任意一种或多种。
本申请实施例提供的柔性显示面板的制作方法中,阳极、空穴注入层、空穴传输层和钙钛矿量子点发光层均采用喷墨打印技术形成,避免了对钙钛矿量子点发光层图案化处理,降低了工艺难度且节省了一道光罩(Mask)制程,从而可以减小生产成本和原料成本,以及提高生产效率;并且,阳极也采用喷墨打印技术形成在像素开口中,避免了采用刻蚀的方法形成图案化的阳极,进一步节省了一道光罩制程,有利于进一步降低工艺难度以及进一步减小生产成本和原料成本,且有利于进一步提高生产效率;另外,形成的阳极为柔性的,有利于制备出弯折性能更好的柔性QLED显示面板。
附图说明
下面结合附图,通过对本申请的具体实施方式详细描述,将使本申请的技术方案及其它有益效果显而易见。
图1为本申请实施例提供的一种柔性显示面板的制作方法的流程示意图。
图2为本申请实施例提供的柔性基板和像素挡墙的结构示意图。
图3为本申请实施例提供的一种柔性显示面板的部分截面结构示意图。
具体实施方式
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述。显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。
示例性的制备QLED显示面板的制作方法中,钙钛矿量子点发光层采用蒸镀的方法形成,需要对钙钛矿量子点发光层图案化处理,待其他功能层形成后构成图案化的QLED器件。然而,对钙钛矿量子点发光层的图案化处理工艺难度较大,因此,本申请提供了一种有效的基于钙钛矿材料的柔性显示面板的制作方法。
具体的,如图1所示,本申请实施例提供了一种柔性显示面板的制作方法,包括以下步骤:
步骤S101:提供柔性基板。
具体的,柔性基板为透明的,且柔性基板的材料包括聚酰亚胺、聚丙烯和聚氯乙烯中的任意一种或多种。
步骤S102:在柔性基板上形成像素挡墙;像素挡墙围绕形成像素开口。
具体的,如图2所示,像素挡墙3在柔性基板2上围成像素开口4,像素开口4的形状可以是矩形的,当然还可以是其他形状,此处不做限制。
具体的,在柔性基板上形成像素挡墙,包括以下步骤:
在柔性基板上覆盖光阻层;
对光阻层进行图案化处理,形成像素挡墙。
具体的,光阻层的材料包括黑色色阻材料,也就是说,像素挡墙的材料包括黑色色阻材料;可以根据像素开口的预设形状对光阻层图案化。
步骤S103:采用喷墨打印技术在像素开口中依次形成阳极、空穴注入层、空穴传输层和钙钛矿量子点发光层。
具体的,阳极的材料包括纳米金、纳米银和碳电极中的任意一种;钙钛矿量子点发光层的材料包括有机无机杂化钙钛矿材料和无机钙钛矿材料中的任意一种。钙钛矿量子点发光层包括红色钙钛矿量子点发光层、绿色钙钛矿量子点发光层和蓝色钙钛矿量子点发光层中的任意一个。
具体的,阳极采用喷墨打印技术形成在像素挡墙围成的像素开口中,由于喷墨打印技术属于溶液法,在打印形成阳极的过程中,阳极墨水材料具有流动性,可以完全覆盖在像素开口中,直接形成图案化的阳极,避免了采用刻蚀的方法形成图案化的阳极,节省了一道光罩(Mask)制程,有利于降低工艺难度,减小了生产成本,且阳极的覆盖面积等于像素开口的面积,节省了阳极材料,避免了刻蚀造成的材料浪费,从而减小了原料成本;且阳极的材料包括纳米金、纳米银和碳电极中的任意一种,使得形成的阳极柔性较好,有利于提高显示面板的弯折性能;另外,阳极上的其他功能层也采用喷墨打印技术形成,每一层在打印的过程中墨水材料都可以覆盖在整个像素开口中,使得任意相邻的两层完全接触,保证了电连接的稳定性。
具体的,钙钛矿量子点发光层也采用喷墨打印技术形成在像素挡墙围成的像素开口中,由于喷墨打印技术属于溶液法,在打印形成钙钛矿量子点发光层的过程中,钙钛矿量子点发光层墨水材料具有流动性,可以完全覆盖在像素开口中,直接形成图案化的钙钛矿量子点发光层,避免了采用刻蚀的方法形成图案化的钙钛矿量子点发光层,节省了一道光罩(Mask)制程,有利于降低工艺难度,减小了生产成本,且钙钛矿量子点发光层的覆盖面积等于像素开口的面积,节省了钙钛矿量子点发光层材料,避免了刻蚀造成的材料浪费,从而减小了原料成本。
步骤S104:采用喷墨打印技术在钙钛矿量子点发光层上依次形成电子传输层和电子注入层。
具体的,电子传输层和电子注入层还可以采用蒸镀法技术电子传输层和电子注入层在钙钛矿量子点发光层上。
步骤S105:采用蒸镀法在电子注入层远离阳极的一侧形成阴极。
具体的,如图3所示,阳极5、空穴注入层6、空穴传输层7、钙钛矿量子点发光层8、电子传输层9、电子注入层10和阴极11依次形成在柔性基板上。
在一实施例中,像素开口4包括红色子像素开口、绿色子像素开口和蓝色子像素开口;红色子像素开口中的钙钛矿量子点发光层为红色钙钛矿量子点发光层;绿色子像素开口中的钙钛矿量子点发光层为绿色钙钛矿量子点发光层;蓝色子像素开口中的钙钛矿量子点发光层为蓝色钙钛矿量子点发光层。
具体的,红色子像素开口中的阳极、空穴注入层、空穴传输层、红色钙钛矿量子点发光层、电子传输层、电子注入层和阴极构成红色QLED器件,用于发红光;绿色子像素开口中的阳极、空穴注入层、空穴传输层、绿色钙钛矿量子点发光层、电子传输层、电子注入层和阴极构成绿色QLED器件,用于发绿光;蓝色子像素开口中的阳极、空穴注入层、空穴传输层、蓝色钙钛矿量子点发光层、电子传输层、电子注入层和阴极构成蓝色QLED器件,用于发蓝光。
具体的,显示面板包括多个红色QLED器件、多个绿色QLED器件和多个蓝色QLED器件,用于全彩色显示。
本实施例中,每个QLED器件中的阳极、空穴注入层、空穴传输层、钙钛矿量子点发光层、电子传输层和电子注入层均采用喷墨打印技术形成,避免了对钙钛矿量子点发光层图案化处理,降低了工艺难度且节省了一道光罩(Mask)制程,从而可以减小生产成本和原料成本,以及提高生产效率;并且,阳极也采用喷墨打印技术形成在像素开口中,避免了采用刻蚀的方法形成图案化的阳极,进一步节省了一道光罩制程,有利于进一步降低工艺难度以及进一步减小生产成本和原料成本,且有利于进一步提高生产效率;另外,形成的阳极也为柔性的,有利于制备出弯折性能更好的柔性QLED显示面板。
以上对本申请实施例所提供的一种柔性显示面板的制作方法进行了详细介绍,本文中应用了具体个例对本申请的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想;本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。
Claims (10)
1.一种柔性显示面板的制作方法,其特征在于,包括以下步骤:
提供柔性基板;
在所述柔性基板上形成像素挡墙;所述像素挡墙围绕形成像素开口;
采用喷墨打印技术在所述像素开口中依次形成阳极、空穴注入层、空穴传输层和钙钛矿量子点发光层。
2.如权利要求1所述的柔性显示面板的制作方法,其特征在于,所述在所述柔性基板上形成像素挡墙,包括以下步骤:
在所述柔性基板上覆盖光阻层;
对所述光阻层进行图案化处理,形成像素挡墙。
3.如权利要求1所述的柔性显示面板的制作方法,其特征在于,所述制作方法还包括以下步骤:
采用喷墨打印技术在所述钙钛矿量子点发光层上依次形成电子传输层和电子注入层。
4.如权利要求1所述的柔性显示面板的制作方法,其特征在于,所述制作方法还包括以下步骤:
采用蒸镀法技术在所述钙钛矿量子点发光层上依次形成电子传输层和电子注入层。
5.如权利要求3或4所述的柔性显示面板的制作方法,其特征在于,所述制作方法还包括以下步骤:
采用蒸镀法在所述电子注入层远离所述阳极的一侧形成阴极。
6.如权利要求1所述的柔性显示面板的制作方法,其特征在于,所述阳极的材料包括纳米金、纳米银和碳电极中的任意一种。
7.如权利要求1所述的柔性显示面板的制作方法,其特征在于,所述钙钛矿量子点发光层的材料包括有机无机杂化钙钛矿材料和无机钙钛矿材料中的任意一种。
8.如权利要求1所述的柔性显示面板的制作方法,其特征在于,所述钙钛矿量子点发光层包括红色钙钛矿量子点发光层、绿色钙钛矿量子点发光层和蓝色钙钛矿量子点发光层中的任意一个。
9.如权利要求8所述的柔性显示面板的制作方法,其特征在于,所述像素开口包括红色子像素开口、绿色子像素开口和蓝色子像素开口;
所述红色子像素开口中的所述钙钛矿量子点发光层为所述红色钙钛矿量子点发光层;所述绿色子像素开口中的所述钙钛矿量子点发光层为所述绿色钙钛矿量子点发光层;所述蓝色子像素开口中的所述钙钛矿量子点发光层为所述蓝色钙钛矿量子点发光层。
10.如权利要求1所述的柔性显示面板的制作方法,其特征在于,所述柔性基板的材料包括聚酰亚胺、聚丙烯和聚氯乙烯中的任意一种或多种。
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106410058A (zh) * | 2016-11-08 | 2017-02-15 | 深圳市华星光电技术有限公司 | 量子点发光器件的制作方法及量子点发光器件 |
CN107086272A (zh) * | 2017-04-27 | 2017-08-22 | 深圳市华星光电技术有限公司 | Oled器件的制作方法、oled器件及oled显示面板 |
CN107623022A (zh) * | 2017-09-29 | 2018-01-23 | 京东方科技集团股份有限公司 | 像素界定层及其制备方法、显示基板及其制备方法、显示装置 |
CN109887962A (zh) * | 2019-02-18 | 2019-06-14 | 京东方科技集团股份有限公司 | 有机发光显示基板及其制作方法、显示装置 |
CN110137166A (zh) * | 2019-05-06 | 2019-08-16 | 深圳市晶台股份有限公司 | 一种基于喷墨技术的led滤光层构成方法 |
WO2019202313A1 (en) * | 2018-04-21 | 2019-10-24 | Savvy Science Limited | Pixel arrangement comprising a perovskite light emitting diode |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106340533B (zh) * | 2016-11-29 | 2019-04-30 | 深圳市华星光电技术有限公司 | Oled显示面板及其制作方法 |
CN109166900B (zh) * | 2018-09-04 | 2021-03-16 | 京东方科技集团股份有限公司 | 显示面板及其制备方法 |
US11296156B2 (en) * | 2018-11-28 | 2022-04-05 | Lg Display Co., Ltd. | Organic light emitting diode device |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106410058A (zh) * | 2016-11-08 | 2017-02-15 | 深圳市华星光电技术有限公司 | 量子点发光器件的制作方法及量子点发光器件 |
CN107086272A (zh) * | 2017-04-27 | 2017-08-22 | 深圳市华星光电技术有限公司 | Oled器件的制作方法、oled器件及oled显示面板 |
CN107623022A (zh) * | 2017-09-29 | 2018-01-23 | 京东方科技集团股份有限公司 | 像素界定层及其制备方法、显示基板及其制备方法、显示装置 |
WO2019202313A1 (en) * | 2018-04-21 | 2019-10-24 | Savvy Science Limited | Pixel arrangement comprising a perovskite light emitting diode |
CN109887962A (zh) * | 2019-02-18 | 2019-06-14 | 京东方科技集团股份有限公司 | 有机发光显示基板及其制作方法、显示装置 |
CN110137166A (zh) * | 2019-05-06 | 2019-08-16 | 深圳市晶台股份有限公司 | 一种基于喷墨技术的led滤光层构成方法 |
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