CN111352297A - Processing method for generating double-pattern mask and recording medium thereof - Google Patents
Processing method for generating double-pattern mask and recording medium thereof Download PDFInfo
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- CN111352297A CN111352297A CN201811590601.7A CN201811590601A CN111352297A CN 111352297 A CN111352297 A CN 111352297A CN 201811590601 A CN201811590601 A CN 201811590601A CN 111352297 A CN111352297 A CN 111352297A
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
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Abstract
The invention provides a processing method for generating a double-pattern photomask. The processing method includes obtaining a contact window distribution pattern, wherein the contact window distribution pattern comprises a plurality of contact windows. The plurality of contact windows are classified into a plurality of contact window blocks of an array type, a pair type or an independent type according to the contact window types. The plurality of contact windows are divided into a first pattern group and a second pattern group, which are arranged in a crossing manner. The number of the contact windows of the first pattern group is consistent with that of the second pattern group within an error range. Checking whether the distance between two adjacent contact windows of the first pattern group and the second pattern group is smaller than the minimum distance, if so, changing the current pattern group of one of the two adjacent contact windows. Outputting the first pattern group or the second pattern group to manufacture the corresponding first mask and second mask.
Description
Technical Field
The present invention relates to semiconductor manufacturing technology, and more particularly, to a processing method for generating a double-pattern mask.
Background
Since the photoresist pattern to be formed is irradiated to the photoresist layer by the light source through the photomask, the pattern of the photomask is transformed to the photoresist layer, wherein the pattern of the photoresist layer inevitably has an optical diffraction effect to generate pattern magnification and distortion relative to the wavelength of the light source, such as yellow light.
In order to avoid the contact windows on the photomask from being too close to each other, which causes the optical diffraction effect to cause the improper connection of the device structure, the original single photomask can be divided into two photomasks, so that the contact window density of the photomask can be reduced, and the optical diffraction effect can be reduced. However, how to properly disassemble (decomposition) the contact pattern of a single mask into two masks is a practical development requirement.
Disclosure of Invention
The invention provides a technique for generating a processing method of a double-pattern photomask, which can systematically disassemble a plurality of contact windows of one photomask into two photomasks, wherein the contact windows of the two photomasks are close in number, and the density of the contact windows can still be uniformly distributed.
In one embodiment, the present invention provides a processing method for generating a dual-pattern mask, which is performed by a processing apparatus. The processing method includes performing contact window phase decomposition, wherein the contact windows belonging to the array type, the pair type and the independent type are decomposed into a first pattern group and a second pattern group respectively by using optimized parameters. Entering a loop processing step, wherein the loop processing step comprises checking whether a conflict is generated between the first pattern group and the second pattern group according to the phase rule check of the contact window. And if the conflict is generated, performing interchange fine adjustment on the first pattern group and the second pattern group. And performing statistical analysis on the first pattern group and the second pattern group, checking whether the first pattern group and the second pattern group are consistent within an allowable error range, and outputting the first pattern group and the second pattern group when the first pattern group and the second pattern group are consistent. When the first pattern group is not consistent with the second pattern group, the phase switching correction of the contact window is carried out, and the loop processing step is returned to continue the loop processing. If the number of cycles exceeds a number, the cycles are stopped and a failure notification is issued.
In one embodiment, for the processing method for generating a dual-pattern mask, the step of obtaining a contact distribution pattern includes obtaining a device contact pattern including a plurality of device contacts to be formed. In addition, the sizes of the contacts are corrected according to the size correction data of the photolithography process to obtain the contacts, which constitute the contact distribution pattern.
In one embodiment, the method for generating a dual pattern mask includes classifying the plurality of contact groups into N contact sizes according to the plurality of contact sizes using a layout design rule, where N is an integer. The N size contact windows are classified into 2N size contact windows according to a first extending direction and a second extending direction of the contact windows, wherein the first extending direction is perpendicular to the second extending direction.
In one embodiment, the method further comprises counting the number of contacts belonging to each of the 2N contact sizes.
In one embodiment, the step of performing statistical analysis on the first pattern group and the second pattern group includes calculating the total number of contacts of the first pattern group and the second pattern group after the contact phases are disassembled. According to the statistical standard deviation value, the sizes of the contact windows are respectively counted to obtain the ratio between the first pattern group and the second pattern group. Determining the overall unraveling efficiency after the unraveling into the first pattern group and the second pattern group, and outputting the first pattern group and the second pattern group when the unraveling efficiency is within a reasonable range close to 50-50% and the standard deviation (3sigma) is less than a set value.
In one embodiment, the processing method for generating a dual-pattern mask further includes providing the first pattern group and the second pattern group as output as a first mask pattern and a second mask pattern.
In one embodiment, the step of performing contact phase disassembly for the processing method for generating a dual-pattern mask includes performing the disassembly of the array-type and the pair-type contacts, and then performing the disassembly of the independent contact.
In one embodiment, the array pattern is three or more contact windows of the same size within a predetermined distance, and the contact windows are regularly distributed in one or two dimensions. The paired contact windows are two contact windows with the same size in adjacent set distance, and the contact windows are distributed in a mutually parallel and overlapped mode. The independent type is a contact not belonging to the array type or the pair type.
In one embodiment, the step of performing the design rule check of the contact includes an edge-to-edge check to check a distance between long edges of two adjacent contacts and a point-to-point check to check a distance between two vertices of two adjacent contacts in the same first pattern group or the same second pattern group.
In one embodiment, the processing method for generating a dual-pattern mask, wherein identifying the array type and the pair type comprises edge-to-edge inspection, wherein the edge-to-edge inspection is based on a distance between long edges of two contacts of two adjacent contacts being smaller than a predetermined distance.
In one embodiment, for the processing method for generating a dual-pattern mask, the edge-to-edge inspection includes that the overlapping portion of two adjacent boundaries is not less than a set value.
In one embodiment, the processing method for generating a dual-pattern mask is described, wherein the pair of the plurality of contact blocks is exchanged between the first pattern group and the second pattern group.
In one embodiment, for the processing method for generating a dual-pattern mask, the paired contact blocks are a first pattern group and a second pattern group which are folded, crossed and disassembled.
In one embodiment, for the processing method for generating a dual pattern mask, the independent contact blocks are independent contacts.
In one embodiment, the present invention further provides a processing method for generating a double-pattern mask. The processing method includes obtaining a contact distribution pattern including a plurality of contacts, the dimensions of the plurality of contacts including a correction to a lithography factor. The processing method further includes classifying the plurality of contact windows into a plurality of contact window groups according to a plurality of contact window sizes and extending directions. For the plurality of contact windows of each of the plurality of contact window groups, a plurality of contact window blocks of an array type, a pair type or an independent type are identified. The plurality of contact windows are disassembled into a first pattern group and a second pattern group, wherein the first pattern group and the second pattern group are arranged in a crossed mode. The number of the first ports of the first pattern group is consistent with the number of the second contact windows of the second pattern group within an error range. Checking whether the distance between two adjacent contact windows of the first pattern group and the second pattern group is smaller than the minimum distance. Changing the designation of the first pattern group or the second pattern group of one of the two adjacent contact windows under the condition of maintaining the condition of disassembling the plurality of contact windows, if the distance between the two adjacent contact windows is smaller than the minimum distance. Outputting the first pattern group or the second pattern group to manufacture the corresponding first mask and second mask.
In one embodiment, the processing method for generating a dual-pattern mask is described, wherein the pair of the plurality of contact blocks is exchanged between the first pattern group and the second pattern group.
In one embodiment, for the processing method for generating a dual-pattern mask, the paired contact blocks are a first pattern group and a second pattern group which are folded, crossed and disassembled.
In one embodiment, the present invention further provides a recording medium for execution by a processing system, the recording medium including a stored processing program for executing the processing method for generating a double-pattern mask.
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
FIG. 1 is a diagram illustrating optical diffraction effects in a photolithography process according to an embodiment of the present invention.
FIG. 2 is a schematic diagram of a dual pattern mask structure according to an embodiment of the present invention.
FIG. 3 is a flow chart illustrating a process for fabricating a device structure using a dual pattern mask according to one embodiment of the present invention.
FIG. 4 is a schematic diagram of an array type, a pair type, and a stand-alone type contact structure according to an embodiment of the invention.
FIG. 5 is a schematic diagram illustrating a mechanism for disassembling a single-layer mask pattern into a double-layer mask pattern according to an embodiment of the present invention.
Fig. 6A to 6C are schematic views illustrating the pattern of adjacent contact holes according to an embodiment of the invention.
FIG. 7 is a schematic diagram illustrating a mechanism of minimum distance between contact patterns according to an embodiment of the present invention.
Fig. 8A and 8B are schematic diagrams illustrating a side-to-side inspection mechanism of a contact pattern according to an embodiment of the invention.
Fig. 9A to 9C are schematic diagrams illustrating a pair-type contact relationship according to an embodiment of the invention.
Fig. 10A and 10B are schematic views illustrating a point-to-point inspection mechanism for contact patterns according to an embodiment of the invention.
FIG. 11 is a flowchart illustrating a processing method for generating a dual-pattern mask according to an embodiment of the invention.
FIG. 12 is a block diagram of a recording medium used in a processing system to execute a mechanism for generating a dual pattern mask according to an embodiment of the invention.
Description of reference numerals:
10: a substrate;
12. 14: a dielectric layer;
16. 16': a photoresist layer;
18. 18': a photomask;
50. 52, 50', 50 ": a contact window;
60: a mask pattern;
62. 62A, 62B: a contact window;
64: a junction window;
66. 68: a photomask;
100: a pair of contact windows;
102: an array type contact;
104: a free-standing contact;
200. 202, 202A, 202B: a contact window;
s10, S12, S14, S16: a step of;
s50, S52, S54, S56, S58: a step of;
s60, S62, S64, S66, S68: a step of;
s70, S72, S74: and (5) carrying out the following steps.
Detailed Description
FIG. 1 is a diagram illustrating optical diffraction effects in a photolithography process according to an embodiment of the present invention. Referring to FIG. 1, the contact window 52 of the mask used in the photolithography process is larger than the contact window 50 of the design to be formed according to the design in consideration of the optical diffraction effect, so as to compensate the optical diffraction effect. The distance between the contact windows 52 of the mask is d. The contact 52 of the mask is actually formed in the photoresist layer as the contact 50' in the photolithography process. However, when the distance d is reduced with the element size, since the distance d is small, it is easy to cause contact between the actually formed contact windows 50 ″ to connect. When the contact 50 "of the photoresist layer is used for etching, it will eventually cause the connection of the device, and also cause the product manufacturing failure.
In order to avoid the problem of too small a distance d between the contact holes, the contact holes 50 of the mask corresponding to the contact holes to be formed can be disassembled (decomposition) into two sets of masks. FIG. 2 is a schematic diagram of a dual pattern mask structure according to an embodiment of the present invention. Referring to fig. 2, a single layer of mask pattern 60, corresponding to the location of the contact 64, plus the photolithography correction (CD bias correction) results in a plurality of contacts 62 required on a single layer distribution, the distances between the contacts 62 may be relatively close, which may be prone to cause at least the defects mentioned in fig. 1, for example.
The strategy of the present invention is to uniformly disassemble the contact windows 62 into two masks. That is, the contact windows 62 distributed in a single layer are separated into the contact windows 62A and 62B. The masks 66 and 68 are fabricated according to the contact holes 62A and 62B, respectively. Since the mask 66 is composed of only the contact holes 62A, the distance between the contact holes 62A is increased, and the possibility of the adjacent contact holes being connected to each other is reduced. Similarly, the mask 68 is formed only by the contact holes 62B, so that the distance between the contact holes 62B is increased. If the masks 66 and 68 are overlapped, the contact holes 62A and 62B can restore the predetermined distribution of the contact holes 62.
The contact 62 is formed on the dielectric layer by an etching process using the disassembled mask 66 and mask 68 to form a photoresist layer as an etching mask, and then the subsequent conductive contact material is filled in. The direct method is to define the photoresist layer by using the mask 66 and the mask 68 to form a photoresist pattern, and then use the photoresist pattern as an etching mask to perform etching, which is a photolithography-etching (LLE) process.
Another manufacturing process is photolithography-lithography-photolithography-etching (LELE). FIG. 3 is a flow chart illustrating a process for fabricating a device structure using a dual pattern mask according to one embodiment of the present invention.
Referring to fig. 3, the sequence of steps S10, S12, S14, S16 from left to right is photolithography-etch-photolithography-etch. In step S10, a dielectric layer 12 and a dielectric layer 14 are formed on the substrate 10. A photoresist layer 16 is formed on the dielectric layer 14. The mask 18 has a set of contact holes for developing the photoresist layer 16 during the photolithography process. In step S12, the dielectric layer 14 is etched to form a contact via in the photoresist layer 16 by using the mask 18. In step S14, another set of contact holes is formed in another photoresist layer 16 'through another mask 18'. In step S16, the photoresist layer 16' is used as an etching mask to perform another etching step to form the desired contact holes in the dielectric layers 12 and 14.
The photolithography process using two masks is only an example, but the present invention is not limited to the subsequent application of two masks. The invention provides how to plan the contact window distribution of two photomasks, and the contact window distribution of an original single layer can be systematically and uniformly disassembled into two contact window distributions for manufacturing two sub photomasks.
FIG. 4 is a schematic diagram of an array type, a pair type, and a stand-alone type contact structure according to an embodiment of the invention. Referring to fig. 4, the present invention classifies the contacts as desired into an array type contact 102, a pair type contact 100 and an independent type contact 104 according to their arrangement positions. The contact 102 is a group of three or more contacts of the same size, which may be one-dimensional or two-dimensional. The paired contacts 100 are configured in parallel by two contacts of the same size. The independent contact 104 is a separate contact, which in one embodiment is not a contact belonging to the pair-type contact 100 or the array-type contact 102.
FIG. 5 is a schematic diagram illustrating a mechanism for disassembling a single-layer mask pattern into a double-layer mask pattern according to an embodiment of the present invention. Referring to fig. 5, in the actual semiconductor structure, the number of contacts required to be completed is relatively large, and thus the contacts are densely packed. One contact hole corresponds to one contact hole on the mask. According to an embodiment of the present invention, the contacts distributed in a single layer are disassembled into two contact patterns, one contact pattern is composed of contacts with oblique lines, and the other contact pattern is composed of contacts without oblique lines, so that two sub-masks can be correspondingly manufactured. However, to properly and systematically disassemble two contact patterns requires classifying the contact types, so as to facilitate the respective disassembly for the contact types.
For the analysis of the contact profile, in one embodiment, it is necessary to take into account some geometric parameters. Fig. 6A to 6C are schematic views illustrating the pattern of adjacent contact holes according to an embodiment of the invention. Referring to fig. 6A, it is the geometric parameters of the corner-to-corner (V2V). For two adjacent contacts 200, this is for example a contact belonging to the original monolayer distribution. The contact 200 is optically modified to obtain the contact 202 of the mask, and if there is no overlapped parallel distribution among the contacts 202, there is a corner-to-corner relationship, and the distance between the corner and the corner is the geometric parameter of the corner and the corner.
Referring to fig. 6B, when the boundaries (boundaries) between two adjacent contacts 200 overlap each other and are parallel, i.e. two adjacent contacts 200 are parallel but may be offset in parallel direction, the edge-to-edge geometry needs to be considered. Referring to FIG. 6C, two adjacent contact windows 200 are indeed in a parallel relationship, and may have a center-to-center (C2C) geometry in addition to an edge-to-edge geometry.
FIG. 7 is a schematic diagram illustrating a mechanism of minimum distance between contact patterns according to an embodiment of the present invention. Referring to fig. 7, although the plurality of contacts can be disassembled into the contacts 202A and 202B, the contact distribution combined with the contacts 202A and 202B into a single layer requires consideration of the distance a between the contacts, and the diagonal and edge-to-edge considerations.
The original contact is broken down into two types of contacts, which may also be referred to as phase decomposition (phase decomposition), and the contacts with different phases represent different contact patterns after the contacts are broken down.
Fig. 8A and 8B are schematic diagrams illustrating a side-to-side inspection mechanism of a contact pattern according to an embodiment of the invention. Referring to fig. 8A, for the contact pattern of the same phase after being disassembled, it is necessary to check whether there is a conflict for the contact according to the Phase Rule Check (PRC) mechanism. In one embodiment, the boundary check of two adjacent contact windows 202A, such as the distance b between the contact window boundaries, needs to be greater than the minimum value. Although the contacts are already phase-resolved, two adjacent contacts in the same phase of contact may be left from different groups of resolutions, so even though the same phase of contact pattern is resolved, there may still be a few contacts that are closely adjacent. Which needs to be further eliminated by phase rule checking. Referring to fig. 8B, when a plurality of contacts are arranged in parallel, it is necessary to check whether there is a closely adjacent contact in consideration of the same consideration as in fig. 8A.
Fig. 9A to 9C are schematic diagrams illustrating a pair-type contact relationship according to an embodiment of the invention. Referring to fig. 9A, in the same phase of the contact pattern, two adjacent contacts 202a may be parallel and completely overlapped in the extending direction of the contact, and the overlapping length C1 is equal to the edge of the contact. Referring to FIG. 9B, the adjacent two contacts 202A may also be offset, such that the length C2 of the parallel overlapping portion is smaller than the length C1. Referring to fig. 9B, the adjacent two contact windows 202a are classified as parallel, and the length of the overlapping portion is not less than the predetermined length C3.
Fig. 10A and 10B are schematic views illustrating a point-to-point inspection mechanism for contact patterns according to an embodiment of the invention. Referring to fig. 10A, in the same phase of contact pattern, the contact 202A may be independent, so the diagonal distance d also needs to be checked. Referring to fig. 10B, in another phase of the contact pattern, the contact 202B after disassembly is a group of surrounding contacts, and therefore the length of the corner-to-corner is also checked.
After establishing the above-mentioned various contact inspection mechanisms, the present invention provides a processing method for generating a double-pattern mask. FIG. 11 is a flowchart illustrating a processing method for generating a dual-pattern mask according to an embodiment of the invention. FIG. 12 is a block diagram of a recording medium used in a processing system to execute a mechanism for generating a dual pattern mask according to an embodiment of the invention.
Referring to fig. 11 and 12, in one embodiment, the method of the present invention, such as a processing program stored on a recording medium 302, can be executed by a cpu 304, which is obtained from a processing system 300, such as a computer system, to systematically analyze the layout of the contact holes actually determined by design, and output two contact hole patterns after being disassembled, so as to facilitate the fabrication of the mask.
Referring to FIG. 11, a process for creating a double-pattern mask is described. In step S50, a device contact pattern is obtained. The device contact pattern includes a plurality of device contacts that are expected to be formed. In step S52, the contact pattern is converted and corrected into a contact distribution pattern. To form the contact structure, the mask is first fabricated. Therefore, for example, it corrects the size of the contact required by the plurality of contacts according to the data of the size correction required by the photolithography process, obtains the plurality of contacts required by the mask, and thus forms the contact distribution pattern.
In step S54, the number of contacts is counted according to the size and the type of the extending direction. The size of the contact is generally a rectangular quadrilateral, and may include a square, so that the contact may be divided into a plurality of contact sizes according to the size change of the contact, including a contact extending in the X-axis direction and a contact extending in the Y-axis direction. According to the various types of the classified contact windows, the number of the contact windows can be counted respectively. That is, the plurality of contact windows are classified into a plurality of contact window groups according to a plurality of contact window sizes.
In step S56, a contact group of the array type contacts 102, the pair type contacts 100 and the independent type contacts 104 is established. That is, for the plurality of contacts included in each of the plurality of contact groups, a plurality of contact blocks are identified according to the characteristics of the array contacts 102, the pair contacts 100, or the independent contacts 104. In practice, there are a plurality of the array type contact 102 blocks, the pair type contact 100 blocks and the independent type contact 104 blocks, which are mutually interpolated.
In step S58, the contact phase is disassembled. After the contact windows are divided into an array type contact window 102 block, a pair type contact window 100 block and an independent type contact window 104 according to the geometric dimensions, the contact windows belonging to the same block are respectively disassembled into two types of contact windows according to the distribution of the types. Described in terms of phase, which is the a-phase contact window and the B-phase contact window. The phase alignment is performed in the manner of fig. 4 and 5, and the contact is aligned in the zigzag (zigzag) cross (star) arrangement.
In step S60, the phase conflict of the contact is checked. As shown in the inspection mechanisms of fig. 6A to 6C, fig. 7, fig. 8A to 8B, fig. 9A to 9C, and fig. 10A to 10B, it is inspected whether there is a conflicting contact in the contact distribution after disassembly. In step S62, the phase trimming of the contact is performed. When there is a conflicting contact, fine tuning of the contact phase may be performed, such as switching the current phase of the contact. In practice, for example, for the independent contact, since the condition for phase a or phase B is relatively weak during phase splitting, it is easy to collide with other contact for splitting. Therefore, by fine tuning of the phase switching, there can be small contact windows with conflict excluded.
In step S64, a contact window statistical analysis is performed. Since the contact is disassembled according to the geometry and size of the contact. The number of the contact windows of the phase A and the phase B can be obtained through statistical analysis. The contact count may vary depending on the singulation strategy. The number of contact windows of phase a and phase B is ideally equal, i.e. both occupy 50%. Different contact size categories may also have different disassembly results. The mean and standard deviation (STD) values can be obtained by statistical analysis, for example, based on various factors such as the above.
In step S66, it is confirmed that the disassembly is satisfactory, i.e., a/B is 50% +/-0.2%; and STD < 10%. The error of phase a compared to phase B is, for example, 0.2%, but not exclusively limited thereto. In addition, the standard deviation STD value is, for example, 10% smaller, but not the only limitation.
If the check at step S66 is satisfied, the process proceeds to step S68, the process is terminated, and the contact window patterns of the disassembled whole phase A and phase B are outputted. If the check of step S66 is not satisfied, step S70 checks if the phase correction of the contact window is not satisfied after a plurality of times. If the disassembly fails for too many times, the treatment is finished, and the attached information can be fed back to the designer to be changed. If the number of failures is still within the upper limit, the process proceeds to step S72, where the dismantling strategy may be largely changed to perform the contact window phase switching correction. Thereafter, the process proceeds to step S60 to start the loop.
Referring to fig. 12, in an embodiment, the method of the present invention can be written as a software program, which is stored on the recording medium 302. For example, the computer system 300 may retrieve the software program from the recording medium 302 and process the above method through the processing unit 304.
In summary, the present invention provides a processing method for generating a dual-pattern mask, which can properly disassemble the contact pattern of an original mask into two sub-masks, wherein the number of contacts of the two sub-masks is approximately equal, and the distance between adjacent contacts can be increased.
The present invention provides a processing method for generating a double-pattern mask, which in one embodiment is a processing program stored in a recording medium for execution by a processing system.
Although the present invention has been described with reference to the above embodiments, it should be understood that various changes and modifications can be made therein by those skilled in the art without departing from the spirit and scope of the invention.
Claims (10)
1. A processing method for generating a double-pattern photomask, which is executed by a processing device, comprises the following steps:
obtaining a contact window distribution pattern, wherein the contact window distribution pattern comprises a plurality of contact windows;
classifying the plurality of contact windows into a plurality of contact window groups according to a plurality of contact window sizes;
identifying a plurality of contact window blocks of an array type, a pair type or an independent type for the plurality of contact windows of each contact window group;
performing contact window phase decomposition, wherein the contact windows belonging to the array type, the pair type and the independent type are decomposed into a first pattern group and a second pattern group respectively by optimized parameters;
entering a circulating treatment step, wherein the circulating treatment step comprises the following steps:
checking whether a conflict part is generated between the first pattern group and the second pattern group according to the phase rule check of the contact window;
if the conflict is generated, changing to carry out interchange fine adjustment of the first pattern group and the second pattern group;
performing statistical analysis on the first pattern group and the second pattern group, checking whether the first pattern group and the second pattern group are consistent within an allowable error range, and outputting the first pattern group and the second pattern group when the first pattern group and the second pattern group are consistent; and
when the first pattern group is not consistent with the second pattern group, the phase switching correction of the contact window is carried out, and the loop processing step is returned to continue the loop processing,
wherein if the number of cycles exceeds a number, the cycles are stopped and a failure notification is issued.
2. The method of claim 1, wherein the step of performing a statistical analysis on the first and second pattern groups comprises:
calculating the total contact window quantity of the first pattern group and the second pattern group after the contact window phase is disassembled;
respectively counting the sizes of the contact windows according to the counted standard deviation value to obtain the proportion between the first pattern group and the second pattern group; and
determining the overall unraveling efficiency after the unraveling into the first pattern group and the second pattern group, and outputting the first pattern group and the second pattern group when the unraveling efficiency is within a reasonable range of 50-50% and the standard deviation value (3sigma) is less than a set value.
3. The method as claimed in claim 1,
wherein the array type is three or more contact windows with the same size in adjacent set distance and is regularly distributed in one dimension or two dimensions,
wherein the pair-forming is two contact windows with the same size in adjacent set distance, and the contact windows are distributed in a manner that the boundaries are parallel to each other and have overlapping; and
wherein the independent type is a contact not belonging to the array type or the pair type.
4. The method of claim 1, wherein the pair of contact blocks is swapped between the first pattern group and the second pattern group.
5. The method of claim 1, wherein the contact window blocks of the pair type are a first pattern group and a second pattern group for zigzag disassembly.
6. The method of claim 1, wherein the independent contact blocks are independent contacts.
7. A processing method for generating a double-pattern photomask comprises the following steps:
obtaining a contact window distribution pattern, wherein the contact window distribution pattern comprises a plurality of contact windows, and the sizes of the contact windows are corrected by the correction of the lithography factors;
classifying the contact windows into a plurality of contact window groups according to the contact window sizes and the extending directions;
identifying a plurality of contact window blocks of an array type, a pair type or an independent type for the plurality of contact windows of each contact window group;
disassembling the plurality of contact windows into a first pattern group and a second pattern group, wherein the first pattern group and the second pattern group are arranged in a crossed manner, and the number of first ports of the first pattern group is consistent with the number of second contact windows of the second pattern group within an error range; and
respectively checking whether the distance between two adjacent contact windows of the first pattern group and the second pattern group is smaller than the minimum distance;
changing the designation of the first pattern group or the second pattern group of one of the adjacent two contact windows under the condition of maintaining the condition of disassembling the plurality of contact windows, if the distance between the adjacent two contact windows is smaller than the minimum distance; and
outputting the first pattern group or the second pattern group to manufacture a corresponding first photomask and a second photomask.
8. The method of claim 7, wherein the pair of contact blocks is swapped between the first pattern group and the second pattern group.
9. The method of claim 7, wherein the contact window blocks of the pair type are a first pattern group and a second pattern group for zigzag disassembly.
10. A recording medium for execution by a processing system, the recording medium comprising a stored processing program for performing the method of claim 1 for generating a dual-pattern mask.
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| TW201102849A (en) * | 2009-07-06 | 2011-01-16 | Univ Nat Taiwan | Method for resolving layout and configured for use with dual-pattern lithography |
| TW201430488A (en) * | 2013-01-16 | 2014-08-01 | United Microelectronics Corp | Method for separating photomask pattern |
| US20150161320A1 (en) * | 2013-12-09 | 2015-06-11 | Spansion Inc. | Scattering bar optimization apparatus and method |
| CN106935584A (en) * | 2015-12-30 | 2017-07-07 | 台湾积体电路制造股份有限公司 | The method for manufacturing integrated circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201102849A (en) * | 2009-07-06 | 2011-01-16 | Univ Nat Taiwan | Method for resolving layout and configured for use with dual-pattern lithography |
| TW201430488A (en) * | 2013-01-16 | 2014-08-01 | United Microelectronics Corp | Method for separating photomask pattern |
| US20150161320A1 (en) * | 2013-12-09 | 2015-06-11 | Spansion Inc. | Scattering bar optimization apparatus and method |
| CN106935584A (en) * | 2015-12-30 | 2017-07-07 | 台湾积体电路制造股份有限公司 | The method for manufacturing integrated circuit |
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