CN111348673A - 一种提高氧化铈化学活性的方法 - Google Patents
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- 229910000420 cerium oxide Inorganic materials 0.000 title claims abstract description 86
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 title claims abstract description 85
- 230000000694 effects Effects 0.000 title claims abstract description 21
- 239000000126 substance Substances 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims abstract description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052786 argon Inorganic materials 0.000 claims abstract description 21
- 238000000227 grinding Methods 0.000 claims abstract description 19
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000001354 calcination Methods 0.000 claims abstract description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000001257 hydrogen Substances 0.000 claims abstract description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000003756 stirring Methods 0.000 claims abstract description 7
- DRVWBEJJZZTIGJ-UHFFFAOYSA-N cerium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ce+3].[Ce+3] DRVWBEJJZZTIGJ-UHFFFAOYSA-N 0.000 claims abstract description 5
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- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- GCLGEJMYGQKIIW-UHFFFAOYSA-H sodium hexametaphosphate Chemical compound [Na]OP1(=O)OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])O1 GCLGEJMYGQKIIW-UHFFFAOYSA-H 0.000 claims description 9
- 235000019982 sodium hexametaphosphate Nutrition 0.000 claims description 9
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
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- ZZZCUOFIHGPKAK-UHFFFAOYSA-N D-erythro-ascorbic acid Natural products OCC1OC(=O)C(O)=C1O ZZZCUOFIHGPKAK-UHFFFAOYSA-N 0.000 claims description 5
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
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- 239000011521 glass Substances 0.000 description 6
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000009471 action Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 4
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 239000005304 optical glass Substances 0.000 description 2
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- RBTBFTRPCNLSDE-UHFFFAOYSA-N 3,7-bis(dimethylamino)phenothiazin-5-ium Chemical compound C1=CC(N(C)C)=CC2=[S+]C3=CC(N(C)C)=CC=C3N=C21 RBTBFTRPCNLSDE-UHFFFAOYSA-N 0.000 description 1
- 229910020200 CeO2−x Inorganic materials 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
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- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical group [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910000421 cerium(III) oxide Inorganic materials 0.000 description 1
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- TUJKJAMUKRIRHC-UHFFFAOYSA-N hydroxyl Chemical compound [OH] TUJKJAMUKRIRHC-UHFFFAOYSA-N 0.000 description 1
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- 239000005368 silicate glass Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
一种提高氧化铈化学活性的方法,包括以下步骤:第一步:将氧化铈研磨至46µm‑120µm,使其D50为80±5µm;第二步:将氧化铈与30%的H2O2、0.1mol/L的稀硫酸混合,每kg氧化铈,30%的H2O2的用量为50‑300ml,0.1mol/L的稀硫酸用量为50‑200ml,在室温下搅拌0.5h,搅拌速度为80‑150rpm,然后用去离子水和抽滤机将氧化铈冲洗若干次,使冲洗液呈中性为止,接着在60℃的烘干炉中烘干;第三步:将上述氧化铈在通有氩气+氢气或氩气+CO的旋转炉中煅烧,煅烧之前,必须将炉中空气排净。本方法能够提高氧化铈的活性。
Description
技术领域
本发明涉及提高氧化铈化学活性的方法,属于材料加工工艺领域。。
背景技术
氧化铈是一种重要的研磨材料和半导体催化剂,广泛应用于研磨硅片、光学玻璃等材料及光催化作用(污水处理)、汽车尾气催化净化等领域。氧化铈的抛光能力及光催化特性与其化学活性密切相关。氧空位是影响氧化铈化学活性的重要因素,与Ce3+伴随伴生。氧化铈的活性随着氧空位密度的增大而增大。氧化铈氧空位密度与氧化铈的非化学计量比CeO2-x、带隙、化学活性和磁性存在复杂的函数关系。铈原子的核外电子构型为4f15d16s2,一般Ce3+与Ce4+同时存在于氧化铈晶格内,具有特殊的变价特性和化学活性以及磁性。在氧化铈中,起激活其化学活性和磁性的是Ce3+,而不是Ce4+。有报道指出,在1200℃-660℃范围内煅烧氧化铈,其抛光效率与Ce3+含量的斯皮尔曼相关系数为0.83。Ce3+的浓度严重依赖于氧化铈晶体类型、晶格常数大小和氧空位密度等。当氧化铈作为磨粒研磨硅酸盐玻璃或硅片等材料时,氧化铈晶体表面Ce3+的Ce4f1电子极易转移到玻璃中O原子的2p4轨道,与玻璃凸起部分的Si-O形成氧桥基键,在机械摩擦力作用下而被抛去,使玻璃或硅片得到平整。氧空位密度越大,其带隙降低越明显。氧化铈作为光催化剂使用时,吸收紫外光照射,Ce3+价带中的电子激发跃迁到导带,同时在价带中产生空穴,空穴可以将吸附在CeO2-x表面的OH-和H2O氧化,生成具有强氧化性的羟基自由基·OH;光生电子也可以与溶液中O2反应,生成强活性氧自由基·O,与污水中的大多数有机物和无机物反应,生成无毒的CO2和H2O等无机小分子,可降解吸附在氧化铈表面的污染物. 这些自由基亦可以参与抛光面的氧化反应,在被抛光材料表面上形成一薄层具有原子级厚度的软化层,提高氧化铈的抛光能力和抛光效率。氧化铈的磁性由Ce3+的4f1轨道磁矩和自旋磁矩决定。为了提高氧化铈的化学活性和磁性,必须改善氧化铈的晶体结构,增加氧化铈中Ce3+的含量。
发明内容
本发明的目的在于提供一种提高氧化铈化学活性的方法,通过对氧化铈进行处理,提高氧化铈的化学活性。
为实现本发明的目的,采用了下述的技术方案:一种提高氧化铈化学活性的方法,包括以下步骤:
第一步:将氧化铈研磨至46µm- 120µm,使其D50为80±5µm;
第二步:将氧化铈与30%的H2O2、0.1mol/L的稀硫酸混合,每kg氧化铈,30%的H2O2的用量为50-300ml,0.1mol/L的稀硫酸用量为50-200ml,在室温下搅拌0.5h,搅拌速度为80-150rpm,然后用去离子水和抽滤机将氧化铈冲洗若干次,使冲洗液呈中性为止,接着在60℃的烘干炉中烘干;
第三步:将上述氧化铈在通有氩气+氢气或氩气+CO的旋转炉中煅烧,煅烧之前,必须将炉中空气排净;
采用氩气+氢气时,氢气在氩气中的浓度为8-10%,氩气+氢气的流量0.5mL/min,旋转炉的旋转速度为以6rmp,煅烧温度至900℃,保温5h,然后在Ar环境下快速冷却至室温;
采用氩气+CO时,CO在氩气中的浓度为1-2%,氩气+CO的流量25mL/min,旋转炉的旋转速度为以6rmp,加热温度至660℃,保温2h,然后在Ar环境下快速冷却至室温。
进一步的;继续将第三步得到的氧化铈在氮气环境下煅烧至1500℃,保温4h,以增加氧化铈的硬度和氧空位含量,然后在N2环境下快速冷却至室温,研磨氧化铈至46µm -120µm,可以保持蓝色在8个月以上,在空气环境下不被氧化。
进一步的;在使用时,上述第二步会第三步到的氧化铈用纯净水配制成12-16 wt%的溶液,用六偏磷酸钠作为分散剂,六偏磷酸钠的添加量是氧化铈质量的1.5wt%,在34-36℃温度下加热,以60rmp速度搅拌,搅拌的同时添加0.5M的维生素C溶液,0.5M的维生素C溶液的体积是纯净水体积的0.2%,搅拌15-30min,然后再配制成要求浓度的研磨液使用。
本发明的积极有益技术效果在于:生产工艺简单,可以大规模生产应用,煅烧后的氧化铈性能稳定,硬度略有增加,化学活性和磁性可以增加20%以上。可以抛光莫氏硬度大于8的材料;提高了氧化铈的光催化性能。利用氧化铈抛光材料时,抛光机理既有机械作用,又有化学作用,合理控制被研磨材料的旋转速度,使机械作用和化学作用协调一致,研磨后的材料表面不会出现划痕,研磨效率高。提高了氧化铈在水介质中的分散性能。不对环境造成二次污染。抛光后的材料容易清洗。
具体实施方式
实施例一:
将30%的双氧水50ml倒入烧杯中,接着添加磨碎至46µm -120µm的商售氧化铈500g,接着添加0.1mol/L的稀硫酸50ml腐蚀,搅拌0.5h,转速90rpm,目的是提高氧化铈表面的粗糙度和比表面积,在这个过程中,有以下反应: 2CeO2+H2O2+3H2SO4→2Ce2(SO4)3+4H2O+O2↑,搅拌停止后,在抽滤机中用去离子水冲洗若干次,使其呈中性为止。然后用干燥箱干燥,温度设定为60℃。将上述样品装入刚玉坩锅中,在管式炉中煅烧至900℃,煅烧环境为含9%H2的氩气,2CeO2+H2→Ce2O3+H2O,保温5h,然后在氩气环境下快速冷却至室温。若氧化铈有粘结现象,再研磨至46µm -120µm。
研磨K9玻璃试验:抛光液浓度130g/L,分散剂六偏磷酸钠的添加量是氧化铈质量的1.5wt%,抛光速率150rpm,抛光压力0.2MPa,研磨1h。结果显示玻璃粗糙度由2.62nm降至1nm,表面光滑,易清洗,在光学显微镜下观察未见划痕。与未改性的商售氧化铈相比,抛光效率提高16%。
实施例二:
将实施案例一得到的46µm-120µm的氧化铈在氩气环境下继续煅烧(氧化铈)至1500℃,2CeO2→2CeO2-x+xO2↑。氧化铈晶体增大,硬度增加,研磨至46µm -120µm。
研磨硅片:抛光液浓度139g/L,分散剂六偏磷酸钠的添加量是氧化铈质量的1.3%,抛光速率146rpm,抛光压力0.3MPa,研磨46min。结果硅片粗糙度由3.26nm降至1.1nm,表面光滑,易清洗,在光学显微镜下观察未见划痕。与未改性的商售氧化铈相比,抛光效率提高26%。
实施例三:
将实施例二制备的氧化铈做研磨CVD金刚石片试验:开启120w的汞灯光源照射抛光液,在光催化辅助下:抛光液浓度130g/L,分散剂六偏磷酸钠的添加量是氧化铈质量的1.3%,抛光盘转速60rpm,研磨2h,抛光压力0.2MPa。结果金刚石片粗糙度由3.56nm降至2nm,表面光滑,易清洗,未见划痕。在相同研磨条件下,与未改性的商售氧化铈相比,抛光效率提高29%。
实施例四:
将实施例一制备的氧化铈做抛光石英玻璃试验:配制氧化铈质量百分比为10%的抛光液,分散剂为六偏磷酸钠,抛光速率150rpm,抛光压力0.2MPa,研磨0.5h。石英玻璃的抛光效率由改性前的276nm/min增加到改性后的361.6nm/min,具有更好的抛光效果。
实施例五:
将实施例二制备的氧化铈做污水处理实验。利用氧化铈作为光催化剂对染料废水进行降解,染料亚甲基蓝的初始浓度为6.2mg/L,氧化铈用量为0.9g/L,用300w的汞灯照射6 h,染料废水的降解率可达92.06%。与未改性的商售氧化铈相比,降解率提高23%。
实施例六:
测量实施例二制得的氧化铈的磁化率为1.86×10-7(SI),比未改性前磁化率提高36%。
实施例七:
研磨光学玻璃试验:抛光液浓度126g/L,分散剂六偏磷酸钠的添加量是氧化铈质量的1.3%,同时添加0.5M的维生素C溶液,2Ce+4+C6H8O6→2Ce3++ C6H6O6+2H+,其体积是抛光液体积的0.2%,抛光速率136rpm,抛光压力0.2MPa,研磨0.5h。结果显示玻璃粗糙度由2.28nm降至1.2nm,表面光滑,易清洗,在光学显微镜下观察未见划痕。与未改性的商售氧化铈相比,抛光效率提高23%。
Claims (3)
1.一种提高氧化铈化学活性的方法,其特征在于包括以下步骤:
第一步:将氧化铈研磨至46µm- 120µm,使其D50为80±5µm;
第二步:将氧化铈与30%的H2O2、0.1mol/L的稀硫酸混合,每kg氧化铈,30%的H2O2的用量为50-300ml,0.1mol/L的稀硫酸用量为50-200ml,在室温下搅拌0.5h,搅拌速度为80-150rpm,然后用去离子水和抽滤机将氧化铈冲洗若干次,使冲洗液呈中性为止,接着在60℃的烘干炉中烘干;
第三步:将上述氧化铈在通有氩气+氢气或氩气+CO的旋转炉中煅烧,煅烧之前,必须将炉中空气排净;
采用氩气+氢气时,氢气在氩气中的浓度为8-10%,氩气+氢气的流量0.5mL/min,旋转炉的旋转速度为以6rmp,煅烧温度至900℃,保温5h,然后在Ar环境下快速冷却至室温;
采用氩气+CO时,CO在氩气中的浓度为1-2%,氩气+CO的流量25mL/min,旋转炉的旋转速度为以6rmp,加热温度至660℃,保温2h,然后在Ar环境下快速冷却至室温。
2.根据权利要求1所述的一种提高氧化铈化学活性的方法,其特征在于:继续将第三步得到的氧化铈在氮气环境下煅烧至1500℃,保温4h,以增加氧化铈的硬度和氧空位含量,然后在N2环境下快速冷却至室温,研磨氧化铈至46µm -120µm,可以保持蓝色在8个月以上,在空气环境下不被氧化。
3.根据权利要求1或2所述的一种提高氧化铈化学活性的方法,其特征在于:在使用时,将权利要求1或2得到的氧化铈用纯净水将配制成12-16 wt %的溶液,用六偏磷酸钠作为分散剂,六偏磷酸钠的添加量是氧化铈质量的1.5wt%,在34-36℃温度下加热,以60rmp速度搅拌,搅拌的同时添加0.5M的维生素C溶液,0.5M的维生素C溶液的体积是纯净水体积的0.2%,搅拌15-30min,然后再配制成要求浓度的研磨液使用。
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