CN111333944A - Semiconductive shielding material for high-voltage cable - Google Patents
Semiconductive shielding material for high-voltage cable Download PDFInfo
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Abstract
The invention discloses a high-voltage cable semi-conductive shielding material, relates to the technical field of cable preparation, and aims to solve the problems that the high-voltage cable semi-conductive shielding material on the market does not have any fireproof performance, once the high-voltage cable semi-conductive shielding material is heated too high in temperature or is burnt by external fire in the using process, the whole cable is burnt, the service life of the cable is greatly shortened, and the normal use of the cable is influenced. The raw materials comprise: the flame-retardant polyethylene composition comprises polyethylene resin, an ethylene-butyl acrylate polymer, intrinsic graphene, rubber, modified kaolin, zinc oxide, a plasticizer, conductive carbon black, a cross-linking agent, a dispersing agent, an antioxidant and a flame retardant, wherein the components in parts by mass are as follows: 24-32% of polyethylene resin, 38-58% of ethylene-butyl acrylate polymer, 1-6% of intrinsic graphene, 20-24% of rubber, 14-20% of modified kaolin, 5-6% of zinc oxide, 4-6% of plasticizer, 8-24% of conductive carbon black, 4-6% of cross-linking agent, 2-4% of dispersant, 3-7% of antioxidant and 14-26% of flame retardant.
Description
Technical Field
The invention relates to the technical field of cable preparation, in particular to a semiconductive shielding material for a high-voltage cable.
Background
Along with the development of science and technology, electricity becomes an indispensable part of the society at present and is an unnecessary factor for the development of the society at present, and the electricity is generally composed of a plurality of or a plurality of groups of conducting wires, so that the atmosphere is easily formed between the conducting wires and an insulating layer, the surface of a conductor is not smooth, and the electric field concentration can be caused. The surface of the conductor is additionally provided with a shielding layer made of a semi-conductive material, the shielding layer is equipotential with the shielded conductor and is in good contact with the insulating layer, so that partial discharge between the conductor and the insulating layer is avoided, the shielding layer is an inner shielding layer, and a gap possibly exists at the contact position of the insulating surface and the sheath and is a factor causing the partial discharge.
The high-voltage cable semi-conductive shielding material on the market at present does not have any fire-proof performance, once the temperature is too high or receives the ignition of external fire in the use, can lead to the scaling loss of whole cable, greatly reduced the life of cable, influence the normal use of cable, consequently need a high-voltage cable semi-conductive shielding material to solve this problem urgently on the market.
Disclosure of Invention
The invention aims to provide a high-voltage cable semi-conductive shielding material, which solves the problems that the high-voltage cable semi-conductive shielding material on the market in the background technology does not have any fireproof performance, once the high-voltage cable semi-conductive shielding material is over-high in temperature or burnt by external fire in the using process, the whole cable is burnt, the service life of the cable is greatly shortened, and the normal use of the cable is influenced.
In order to achieve the purpose, the invention provides the following technical scheme: a semiconductive shielding material for a high-voltage cable comprises the following raw materials: the flame-retardant polyethylene composition comprises polyethylene resin, an ethylene-butyl acrylate polymer, intrinsic graphene, rubber, modified kaolin, zinc oxide, a plasticizer, conductive carbon black, a cross-linking agent, a dispersing agent, an antioxidant and a flame retardant, wherein the components in parts by mass are as follows: 24-32% of polyethylene resin, 38-58% of ethylene-butyl acrylate polymer, 1-6% of intrinsic graphene, 20-24% of rubber, 14-20% of modified kaolin, 5-6% of zinc oxide, 4-6% of plasticizer, 8-24% of conductive carbon black, 4-6% of cross-linking agent, 2-4% of dispersant, 3-7% of antioxidant and 14-26% of flame retardant.
Preferably, the rubber is a mixture of butadiene acrylonitrile rubber and styrene butadiene rubber, wherein the butadiene acrylonitrile rubber comprises 66.6% of components, and the styrene butadiene rubber comprises 33.3% of components.
Preferably, the kaolin is modified by the following steps: mixing 40-60% of kaolin into 200-240% of water, adding 4-8% of hexadecyl trimethyl ammonium bromide into the mixture, fully emulsifying in an emulsifying tank, then adding 6-8% of nanocarbon, heating to 75-90 ℃, stirring at the rotating speed of 800-1000r/min for 25-35min, drying the prepared kaolin, fully crushing the kaolin through a crushing device, and finally sorting through a screening device to ensure that the size of the used kaolin is less than 300 meshes.
Preferably, the plasticizer is a phthalate ester (PAES).
Preferably, the cross-linking agent is 2, 5-dimethyl-2, 5-di-tert-butyl hexane peroxide (abbreviated as bis 25).
Preferably, the dispersant is benzoyl peroxide.
Preferably, the antioxidant is a hindered phenol bisphenol a.
Preferably, the flame retardant is ultrafine aluminum hydroxide particles.
Compared with the prior art, the invention has the beneficial effects that: 1. this high tension cable semi-conductive shielding material passes through the addition of this card rare and fire retardant, and the fire retardant adopts the ultramicro aluminium hydroxide granule that refines, make cable semi-conductive shielding material have certain fire proofness and fire resistance, can avoid using the too high or receive the ignition of external fire of in-process temperature, the life of cable has been guaranteed, ensure the normal use of whole cable, high tension cable semi-conductive shielding material on the market at present does not have any fire behavior, in case the too high or the ignition that receives external fire of in-process temperature in the use, can lead to the scaling loss of whole cable, greatly reduced the life of cable, influence the problem of the normal use of cable.
2. The high-voltage cable semiconductive shielding material is well-ordered in the whole preparation process, is fully mixed, ensures the quality of the high-voltage cable semiconductive shielding material, has better electrical property, strong conductive property, good thermal aging property, stronger high temperature resistance and stable chemical property, can be widely used for the high-voltage cable semiconductive shielding material, and has reasonable production cost.
3. The semiconductive shielding material for the high-voltage cable is suitable for shielding materials of cables of different types, is low in limitation, good in processing performance, high in tensile strength and strong in oxidation resistance, greatly prolongs the service life of the high-voltage cable, is reasonable in proportion among raw materials of all components, has certain environmental friendliness, and reduces pollution in the production process.
Detailed Description
The embodiments described below in connection with the present invention are only a part of the embodiments of the present invention, and not all of them.
Example one
The method comprises the following steps: pouring 20% of rubber into a mixing tank, then pouring 14% of modified kaolin into the mixing tank, starting the mixing tank, adjusting the rotating speed of the mixing tank to 1000r/min, and mixing for 30min to obtain a first mixture;
step two: pouring 5% of zinc oxide into the mixing tank, starting the mixing tank, adjusting the rotating speed of the mixing tank to 1000r/min, and mixing for 30min to fully mix the zinc oxide with the first mixture to obtain a second mixture;
step three: pouring 8% of conductive carbon black into the mixing tank, starting the mixing tank, adjusting the rotating speed of the mixing tank to 1000r/min, and mixing for 30min to fully mix the conductive carbon black with the second mixture to obtain a third mixture;
step four: pouring 3% of antioxidant into a mixing tank, starting the mixing tank, adjusting the rotating speed of the mixing tank to 1000r/min, and mixing for 1h to fully mix the antioxidant with the mixture III to obtain a mixture IV;
step five: pouring the mixture IV into an internal mixer, adjusting the rotating speed of the internal mixer to 200r/min, and carrying out internal mixing for 1h at the internal mixing temperature of 75 ℃;
step six: pouring the internally mixed mixture into a kneader, pouring 24% of polyethylene resin into the kneader, adjusting the rotation speed of the kneader to 100r/min, kneading for 20 min at the rotation speed, and controlling the temperature in the kneader to be 30 ℃ to obtain a mixture V;
step seven: pouring 38% of ethylene-butyl acrylate polymer into the interior of a kneader, adjusting the rotating speed of the kneader to be 100r/min, kneading for 20 min at the rotating speed, and controlling the temperature in the kneader to be 30 ℃ to obtain a mixture six;
step eight: pouring 1% of intrinsic graphene into the interior of a kneader, adjusting the rotating speed of the kneader to 400 r/min, kneading for 20 min at the rotating speed, and controlling the temperature in the kneader to be 100 ℃ to obtain a mixture seven;
step nine: pouring 4% of plasticizer into the interior of a kneader, adjusting the rotating speed of the kneader to be 100r/min, kneading for 20 min at the rotating speed, and controlling the temperature in the kneader to be 30 ℃ to obtain a mixture eight;
step ten: sequentially adding 2% of dispersing agent and 14% of flame retardant into the interior of a kneader, adjusting the rotating speed of the kneader to be 100r/min, kneading for 20 min at the rotating speed, and controlling the temperature in the kneader to be 30 ℃ to obtain a mixture nine;
step eleven: spraying 4% of cross-linking agent into the mixture nine through a spraying device, adjusting the rotating speed of the kneading machine to be 100r/min, continuously kneading for 1h at the rotating speed, controlling the temperature inside the kneading machine to be 30 ℃ to obtain a mixture ten, and discharging the mixture ten after the cross-linking agent is completely absorbed after dipping treatment;
step twelve: pouring the mixture ten into the extruder, extruding and granulating through the extruder, and cooling through a cold zone device to obtain the required high-voltage cable semiconductive shielding material.
Example two
The method comprises the following steps: pouring 22% of rubber into a mixing tank, then pouring 16% of modified kaolin into the mixing tank, starting the mixing tank, adjusting the rotating speed of the mixing tank to 1000r/min, and mixing for 30min to obtain a first mixture;
step two: pouring 5.5% of zinc oxide into the mixing tank, starting the mixing tank, adjusting the rotating speed of the mixing tank to 1000r/min, and mixing for 30min to fully mix the zinc oxide with the first mixture to obtain a second mixture;
step three: pouring 10% of conductive carbon black into the mixing tank, starting the mixing tank, adjusting the rotating speed of the mixing tank to 1000r/min, and mixing for 30min to fully mix the conductive carbon black with the second mixture to obtain a third mixture;
step four: pouring 4% of antioxidant into a mixing tank, starting the mixing tank, adjusting the rotating speed of the mixing tank to 1000r/min, and mixing for 1h to fully mix the antioxidant with the mixture III to obtain a mixture IV;
step five: pouring the mixture IV into an internal mixer, adjusting the rotating speed of the internal mixer to 200r/min, and carrying out internal mixing for 1h at the internal mixing temperature of 75 ℃;
step six: pouring the internally mixed mixture into a kneader, pouring 26% of polyethylene resin into the kneader, adjusting the rotation speed of the kneader to 120r/min, kneading for 25 min at the rotation speed, and controlling the temperature in the kneader to 35 ℃ to obtain a mixture V;
step seven: pouring 42% of ethylene-butyl acrylate polymer into the interior of a kneader, adjusting the rotating speed of the kneader to be 100r/min, kneading for 20 min at the rotating speed, and controlling the temperature in the kneader to be 30 ℃ to obtain a mixture six;
step eight: pouring 2% of intrinsic graphene into the interior of a kneader, adjusting the rotating speed of the kneader to 400 r/min, kneading for 20 min at the rotating speed, and controlling the temperature in the kneader to be 100 ℃ to obtain a mixture seven;
step nine: pouring 4.5% of plasticizer into the interior of a kneader, adjusting the rotating speed of the kneader to be 100r/min, kneading for 20 min at the rotating speed, and controlling the temperature in the kneader to be 30 ℃ to obtain a mixture eight;
step ten: sequentially adding 2.5% of dispersing agent and 18% of flame retardant into the interior of a kneader, adjusting the rotating speed of the kneader to be 100r/min, kneading for 20 min at the rotating speed, and controlling the temperature in the kneader to be 30 ℃ to obtain a mixture nine;
step eleven: spraying 4.5% of cross-linking agent into the mixture nine through a spraying device, adjusting the rotating speed of the kneader to be 100r/min, continuously kneading for 1h at the rotating speed, wherein the temperature inside the kneader is 30 ℃ to obtain a mixture ten, and discharging the mixture ten after the cross-linking agent is completely absorbed after the dipping treatment;
step twelve: pouring the mixture ten into the extruder, extruding and granulating through the extruder, and cooling through a cold zone device to obtain the required high-voltage cable semiconductive shielding material.
EXAMPLE III
The method comprises the following steps: pouring 23% of rubber into a mixing tank, pouring 18% of modified kaolin into the mixing tank, starting the mixing tank, adjusting the rotating speed of the mixing tank to 1200r/min, and mixing for 40min to obtain a first mixture;
step two: pouring 6% of zinc oxide into the mixing tank, starting the mixing tank, adjusting the rotating speed of the mixing tank to 1200r/min, and mixing for 40min to fully mix the zinc oxide with the first mixture to obtain a second mixture;
step three: pouring 14% of conductive carbon black into the mixing tank, starting the mixing tank, adjusting the rotating speed of the mixing tank to 1200r/min, and mixing for 40min to fully mix the conductive carbon black with the second mixture to obtain a third mixture;
step four: pouring 5% of antioxidant into a mixing tank, starting the mixing tank, adjusting the rotating speed of the mixing tank to 1200r/min, and mixing for 1.5h to fully mix the antioxidant with the mixture III to obtain a mixture IV;
step five: pouring the mixture IV into an internal mixer, adjusting the rotating speed of the internal mixer to 250r/min, and carrying out internal mixing for 1.3h at the internal mixing temperature of 90 ℃;
step six: pouring the internally mixed mixture into a kneader, pouring 24% of polyethylene resin into the kneader, adjusting the rotation speed of the kneader to 120r/min, kneading for 25 min at the rotation speed, and controlling the temperature in the kneader to 35 ℃ to obtain a mixture V;
step seven: pouring 46% of ethylene-butyl acrylate polymer into the interior of a kneader, adjusting the rotating speed of the kneader to 120r/min, kneading for 25 min at the rotating speed, and controlling the temperature in the kneader to 35 ℃ to obtain a mixture six;
step eight: pouring 3% of intrinsic graphene into the interior of a kneader, adjusting the rotation speed of the kneader to be 500r/min, kneading for 25 min at the rotation speed, and controlling the temperature in the kneader to be 110 ℃ to obtain a mixture seven;
step nine: pouring 5% of plasticizer into the interior of a kneader, adjusting the rotating speed of the kneader to 120r/min, kneading for 25 min at the rotating speed, and controlling the temperature in the kneader to 35 ℃ to obtain a mixture eight;
step ten: sequentially adding 3% of dispersing agent and 20% of flame retardant into the interior of a kneader, adjusting the rotating speed of the kneader to 120r/min, kneading for 25 min at the rotating speed, and controlling the temperature in the kneader to 35 ℃ to obtain a mixture nine;
step eleven: spraying 5% of cross-linking agent into the mixture nine through a spraying device, adjusting the rotating speed of the kneader to 120r/min, continuously kneading for 1.5h at the rotating speed, controlling the temperature inside the kneader to 35 ℃ to obtain a mixture ten, and discharging the mixture ten after the cross-linking agent is completely absorbed after dipping treatment;
step twelve: pouring the mixture ten into the extruder, extruding and granulating through the extruder, and cooling through a cold zone device to obtain the required high-voltage cable semiconductive shielding material.
Example four
The method comprises the following steps: pouring 23.5% of rubber into a mixing tank, then pouring 19% of modified kaolin into the mixing tank, starting the mixing tank, adjusting the rotating speed of the mixing tank to be 1500r/min, and mixing for 1h to obtain a first mixture;
step two: pouring 6% of zinc oxide into the mixing tank, starting the mixing tank, adjusting the rotating speed of the mixing tank to 1500r/min, and mixing for 1h to fully mix the zinc oxide with the first mixture to obtain a second mixture;
step three: pouring 20% of conductive carbon black into the mixing tank, starting the mixing tank, adjusting the rotating speed of the mixing tank to be 1500r/min, and mixing for 1h to fully mix the conductive carbon black with the second mixture to obtain a third mixture;
step four: pouring 6% of antioxidant into a mixing tank, starting the mixing tank, adjusting the rotating speed of the mixing tank to 1500r/min, and mixing for 2h to fully mix the antioxidant with the mixture III to obtain a mixture IV;
step five: pouring the mixture IV into an internal mixer, adjusting the rotating speed of the internal mixer to 300r/min, and carrying out internal mixing for 1.5h at the internal mixing temperature of 100 ℃;
step six: pouring the internally mixed mixture into a kneader, pouring 30% of polyethylene resin into the kneader, adjusting the rotation speed of the kneader to 150r/min, kneading for 30min at the rotation speed, and controlling the temperature in the kneader to be 40 ℃ to obtain a mixture V;
step seven: pouring 50% of ethylene-butyl acrylate polymer into the interior of a kneader, adjusting the rotating speed of the kneader to be 150r/min, kneading for 30min at the rotating speed, and controlling the temperature in the kneader to be 40 ℃ to obtain a mixture six;
step eight: pouring 5% of intrinsic graphene into the interior of a kneader, adjusting the rotation speed of the kneader to 550r/min, kneading for 30min at the rotation speed, and controlling the temperature in the kneader to 120 ℃ to obtain a mixture seven;
step nine: pouring 5.5% of plasticizer into the interior of a kneader, adjusting the rotating speed of the kneader to be 150r/min, kneading for 30min at the rotating speed, and controlling the temperature in the kneader to be 40 ℃ to obtain a mixture eight;
step ten: sequentially adding 3.5% of dispersing agent and 23% of flame retardant into the interior of a kneader, adjusting the rotating speed of the kneader to be 150r/min, kneading for 30min at the rotating speed, and controlling the temperature in the kneader to be 40 ℃ to obtain a mixture nine;
step eleven: spraying 5.5% of cross-linking agent into the mixture nine through a spraying device, adjusting the rotating speed of the kneader to 150r/min, continuously kneading for 2h at the rotating speed, wherein the temperature inside the kneader is 40 ℃, obtaining a mixture ten, and discharging the mixture ten after the cross-linking agent is completely absorbed after the dipping treatment;
step twelve: pouring the mixture ten into the extruder, extruding and granulating through the extruder, and cooling through a cold zone device to obtain the required high-voltage cable semiconductive shielding material.
EXAMPLE five
The method comprises the following steps: pouring 24% of rubber into a mixing tank, pouring 20% of modified kaolin into the mixing tank, starting the mixing tank, adjusting the rotating speed of the mixing tank to be 1500r/min, and mixing for 1h to obtain a first mixture;
step two: pouring 6% of zinc oxide into the mixing tank, starting the mixing tank, adjusting the rotating speed of the mixing tank to 1500r/min, and mixing for 1h to fully mix the zinc oxide with the first mixture to obtain a second mixture;
step three: pouring 24% of conductive carbon black into the mixing tank, starting the mixing tank, adjusting the rotating speed of the mixing tank to be 1500r/min, and mixing for 1h to fully mix the conductive carbon black with the second mixture to obtain a third mixture;
step four: pouring 7% of antioxidant into a mixing tank, starting the mixing tank, adjusting the rotating speed of the mixing tank to 1500r/min, and mixing for 2h to fully mix the antioxidant with the mixture III to obtain a mixture IV;
step five: pouring the mixture IV into an internal mixer, adjusting the rotating speed of the internal mixer to 300r/min, and carrying out internal mixing for 1.5h at the internal mixing temperature of 100 ℃;
step six: pouring the internally mixed mixture into a kneader, pouring 32% of polyethylene resin into the kneader, adjusting the rotation speed of the kneader to 150r/min, kneading for 30min at the rotation speed, and controlling the temperature in the kneader to be 40 ℃ to obtain a mixture V;
step seven: pouring 58% of ethylene-butyl acrylate polymer into the interior of a kneader, adjusting the rotating speed of the kneader to be 150r/min, kneading for 30min at the rotating speed, and controlling the temperature in the kneader to be 40 ℃ to obtain a mixture six;
step eight: pouring 6% of intrinsic graphene into the interior of a kneader, adjusting the rotation speed of the kneader to 550r/min, kneading for 30min at the rotation speed, and controlling the temperature in the kneader to 120 ℃ to obtain a mixture seven;
step nine: pouring 6% of plasticizer into the interior of a kneader, adjusting the rotating speed of the kneader to be 150r/min, kneading for 30min at the rotating speed, and controlling the temperature in the kneader to be 40 ℃ to obtain a mixture eight;
step ten: sequentially adding 4% of dispersing agent and 26% of flame retardant into the interior of a kneader, adjusting the rotating speed of the kneader to be 150r/min, kneading for 30min at the rotating speed, and controlling the temperature in the kneader to be 40 ℃ to obtain a mixture nine;
step eleven: spraying 6% of cross-linking agent into the mixture nine through a spraying device, adjusting the rotating speed of the kneader to be 150r/min, continuously kneading for 2 hours at the rotating speed, controlling the temperature inside the kneader to be 40 ℃ to obtain a mixture ten, and discharging the mixture ten after the cross-linking agent is completely absorbed after dipping treatment;
step twelve: pouring the mixture ten into the extruder, extruding and granulating through the extruder, and cooling through a cold zone device to obtain the required high-voltage cable semiconductive shielding material.
By comparing the results obtained in the above five examples, the shielding material obtained by the mixture ratio of the materials in the third example has the strongest performance, and meets various standards.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Nothing in the claims should be taken as an admission that any of the claims are entitled to antedate such claims.
Claims (8)
1. A semiconductive shielding material for a high-voltage cable is characterized by comprising the following raw materials: the flame-retardant polyethylene composition comprises polyethylene resin, an ethylene-butyl acrylate polymer, intrinsic graphene, rubber, modified kaolin, zinc oxide, a plasticizer, conductive carbon black, a cross-linking agent, a dispersing agent, an antioxidant and a flame retardant, wherein the components in parts by mass are as follows: 24-32% of polyethylene resin, 38-58% of ethylene-butyl acrylate polymer, 1-6% of intrinsic graphene, 20-24% of rubber, 14-20% of modified kaolin, 5-6% of zinc oxide, 4-6% of plasticizer, 8-24% of conductive carbon black, 4-6% of cross-linking agent, 2-4% of dispersant, 3-7% of antioxidant and 14-26% of flame retardant.
2. The semiconductive shield material for high-voltage cables according to claim 1, wherein: the rubber is a mixture of butadiene acrylonitrile rubber and styrene butadiene rubber, wherein the butadiene acrylonitrile rubber comprises 66.6% of components, and the styrene butadiene rubber comprises 33.3% of components.
3. The semiconductive shield material for high-voltage cables according to claim 1, wherein: the kaolin modification steps are as follows: mixing 40-60% of kaolin into 200-240% of water, adding 4-8% of hexadecyl trimethyl ammonium bromide into the mixture, fully emulsifying in an emulsifying tank, then adding 6-8% of nanocarbon, heating to 75-90 ℃, stirring at the rotating speed of 800-1000r/min for 25-35min, drying the prepared kaolin, fully crushing the kaolin through a crushing device, and finally sorting through a screening device to ensure that the size of the used kaolin is less than 300 meshes.
4. The semiconductive shield material for high-voltage cables according to claim 1, wherein: the plasticizer is Phthalate (PAES).
5. The semiconductive shield material for high-voltage cables according to claim 4, wherein: the cross-linking agent is 2, 5-dimethyl-2, 5-di-tert-butyl hexane peroxide (bis 25 for short).
6. The semiconductive shield material for high-voltage cables according to claim 1, wherein: the dispersing agent is benzoyl peroxide.
7. The semiconductive shield material for high-voltage cables according to claim 1, wherein: the antioxidant is hindered phenol bisphenol A.
8. The semiconductive shield material for high-voltage cables according to claim 1, wherein: the flame retardant is ultra-fine aluminum hydroxide particles.
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| CN107325390A (en) * | 2017-08-02 | 2017-11-07 | 合肥尚涵装饰工程有限公司 | A kind of high-tension cable semiconductive shieldin material |
| CN108530669A (en) * | 2018-05-16 | 2018-09-14 | 鸿纳（东莞）新材料科技有限公司 | A kind of graphene-based fireproofing plastic board and preparation method thereof |
| CN109438840A (en) * | 2018-10-29 | 2019-03-08 | 刘景章 | A kind of wear-resisting flame-retarded plastic and preparation method thereof |
| CN110421929A (en) * | 2019-07-02 | 2019-11-08 | 安徽英标新材料科技有限公司 | A kind of aluminium-plastic panel building decoration materials |
-
2020
- 2020-03-13 CN CN202010173084.4A patent/CN111333944A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107325390A (en) * | 2017-08-02 | 2017-11-07 | 合肥尚涵装饰工程有限公司 | A kind of high-tension cable semiconductive shieldin material |
| CN108530669A (en) * | 2018-05-16 | 2018-09-14 | 鸿纳（东莞）新材料科技有限公司 | A kind of graphene-based fireproofing plastic board and preparation method thereof |
| CN109438840A (en) * | 2018-10-29 | 2019-03-08 | 刘景章 | A kind of wear-resisting flame-retarded plastic and preparation method thereof |
| CN110421929A (en) * | 2019-07-02 | 2019-11-08 | 安徽英标新材料科技有限公司 | A kind of aluminium-plastic panel building decoration materials |
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Application publication date: 20200626 |