CN107325390A - A kind of high-tension cable semiconductive shieldin material - Google Patents
A kind of high-tension cable semiconductive shieldin material Download PDFInfo
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- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L23/00—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
- C08L23/02—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
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Abstract
The invention belongs to technical field of cable, and in particular to a kind of high-tension cable semiconductive shieldin material；The cable semi-conductive shield material is made up of polyvinyl resin, ethylene butyl acrylate polymer, rubber, modified kaolin, zinc oxide, plasticizer, conductive black, crosslinking agent, dispersant and antioxidant；Wherein rubber is addition cetyl trimethylammonium bromide and nano-sized carbon progress emulsification heating in the mixture of nitrile rubber and butadiene-styrene rubber, kaolin so that kaolin property changes.Shielding material preparation process includes the multiple working procedures such as banburying, kneading, spray, extruding pelletization, and a kind of high-tension cable semiconductive shieldin material that the present invention is provided has good mechanical property, and corrosion-resistant, anti-oxidant, resistance to elevated temperatures is good；And with relatively low specific insulation, conduct electricity very well.
Description
Technical field
The invention belongs to technical field of cable, and in particular to a kind of high-tension cable semiconductive shieldin material.
Background technology
During power network is power system, contact generate electricity and electricity consumption facilities and equipment general designation.Belong to conveying and distribution electric energy
Intermediate link, it is mainly constituted by being coupled power transmission sequence into the net, electric substation, distribution substation and distribution line.Generally by defeated
The contact generating that electricity, power transformation, controller switching equipment and corresponding accessory system are constituted uniformly is collectively referred to as power network with electricity consumption, referred to as
Power network.The problem of appearance solution electricity consumption of power network and the inconsistent geographical position of GENERATION MARKET, long-distance transmission is allowed to be possibly realized, far
The defeated power transmission of journey is generally conveyed to reduce the power consumption on circuit using high-tension electricity.
Cable conductor is formed by multiple conducting wires are stranded, and it easily forms air gap between insulating barrier, and conductive surface is rough, meeting
Electric field is caused to concentrate.IEC provides that 6kV and above cable should all possess inner semiconductor layer and outer semiconductive screen
Cover layer.In conductive surface plus the screen layer of one layer of semiconductive material, it is with the conductor equipotential that is shielded and good with insulating barrier
Contact, so as to avoid that shelf depreciation occurs between conductor and insulating barrier, this layer is shielding for internal shield；Equally in insulation meter
Face and sheath contact position also likely to be present gap, be the factors for causing shelf depreciation, therefore add one layer of semiconductive in surface of insulating layer
The screen layer of material, it has good contact with the insulating barrier shielded, and protective metal shell equipotential so that avoid insulating barrier with
Shelf depreciation occurs between sheath, this layer is shielding for external shielding layer.If internal shield and external shielding layer are not present in cable,
The possibility that insulation breakdown occurs between three-core cable SMIS and core is very big.
Semiconductive shielding layer in the market is broadly divided into two kinds of semi-conductive tape and semiconductive plastics, semi-conductive tape due to
In the presence of inevitable insulating barrier space or stomata, insulating barrier is easily breakdown；So it is at most semiconductive that in the market, which is applied,
Plastic shielded layer, semiconductive plastics typically use EVA resin, and this material production cost is relatively low, but under the conditions of high temperature etc.
Easy oxidation Decomposition, influences the service life of cable, is effectively arranged in shielding material while EVA material is also unfavorable for conductive material
Row, the electric conductivity for causing shielding to be expected is poor.
The content of the invention
For problem above, it is an object of the invention to provide a kind of high-tension cable semiconductive shieldin material, this cable half
Conductive shield material have it is good insulate, corrosion-resistant and anti-oxidant etc. mechanical performance, also with good electrical conductivity.
A kind of high-tension cable semiconductive shieldin material, according to mass fraction, the composition of the semiconductive shieldin material is：Polyethylene tree
25-30 parts of fat, 40-60 parts of Ethylene-butyl acrylate polymer, 20-25 parts of rubber, 15-20 parts of modified kaolin, zinc oxide 5-
8 parts, 5-8 parts of plasticizer, 10-15 parts of conductive black, 4-7 parts of crosslinking agent, 2-5 parts of dispersant, 3-8 parts of antioxidant.
It is preferred that, the composition of the semiconductive shieldin material is according to mass fraction：26-28 parts of polyvinyl resin, ethylene-propylene
50-55 parts of acid butyl ester polymer, 22-24 parts of rubber, 16-18 parts of modified kaolin, 6-7 parts of zinc oxide, 6-7 parts of plasticizer is led
Electric carbon black 12-13 parts, 5-6 parts of crosslinking agent, 3-4 parts of dispersant, 5-7 parts of antioxidant.
It is further preferred that its composition is according to mass fraction：27 parts of polyvinyl resin, Ethylene-butyl acrylate polymerization
50 parts of thing, 23 parts of rubber, 17 parts of modified kaolin, 7 parts of zinc oxide, 6 parts of plasticizer, 13 parts of conductive black, 6 parts of crosslinking agent, point
4 parts of powder, 6 parts of antioxidant.
It is preferred that, the rubber is the mixture of nitrile rubber and butadiene-styrene rubber, and the two mass ratio is 2:1.
It is preferred that, the improvement of kaolin is：40-60 parts of kaolin will be entered in 200 parts of water, 3-7 parts are added
Cetyl trimethylammonium bromide, it is fully emulsified, 7-9 parts of nano-sized carbons are then added, 80 DEG C are heated to, in 800-1000r/min
Rotating speed under stir 20-30min, drying and crushing simultaneously crosses 300-350 mesh sieves.
It is preferred that, the plasticizer is dioctyl phthalate；Crosslinking agent is cumyl peroxide.
It is preferred that, the dispersant is benzoyl peroxide；Antioxidant is Hinered phenols bisphenol-A.
The preparation method of high-tension cable semiconductive shieldin material, comprises the following steps：Raw material is weighed according to mass fraction, by rubber
Glue, modified kaolin, zinc oxide, conductive black and antioxidant mixing, are then fed into banbury and carry out banbury, banburying
The rotating speed of machine is 180-250r/min, and temperature is 80-90 DEG C.
Again by the material obtained after banburying and polyvinyl resin, Ethylene-butyl acrylate polymer, plasticizer and dispersant
Mixing is sent in kneader, and 15-20min is mediated under 120-140r/min rotating speed, and kneader temperature is 20-40 DEG C；Pinch
Crosslinking agent is sprayed with spray column during conjunction, infiltration processing is carried out, after crosslinking agent is completely absorbed, feeds the mixture into double
Room temperature is cooled to after extruding pelletization in screw extruder, discharging, high-tension cable semiconductive shieldin material needed for obtaining.
A kind of high-tension cable semiconductive shieldin material that the present invention is provided, compared with prior art, with advantages below：
The electric property of the high-tension cable semiconductive shieldin material is very excellent, conducts electricity very well, and specific insulation is relatively low, and heat is old
Change performance good, performance indications can still keep stable at high operating temperatures, can be widely applied to the inner shield of high-tension cable
The selection of the shielding material of layer and external shielding layer, the production cost of shielding material is relatively low.
In addition, the high-tension cable semiconductive shieldin material has good processing characteristics, it can be used for producing different stage
The screen layer of cable, the screen layer mechanical performance of production is excellent, and tensile strength is high, and corrosion-resistant and antioxygenic property is all fine, can
To improve the service life of cable.The screen layer produced using the shielding material also has the value of environmental protection, and production process is dirty to environment
Dye is smaller, and the screen layer of production is easily peeled off, and is easy to the recycling of cable.
Embodiment
The embodiment to the present invention is described in detail below.It should be appreciated that described herein specific
Embodiment is merely to illustrate and explain the present invention, and is not intended to limit the invention.
Embodiment 1
40 parts of kaolin will be entered in 200 parts of water, 3 parts of cetyl trimethylammonium bromides, fully emulsified, Ran Houjia are added
Enter 7 parts of nano-sized carbons, be heated to 80 DEG C, stir 20min under 800r/min rotating speed, drying and crushing is simultaneously crossed 300 mesh sieves and changed
Property kaolin.
Weigh the shielding material raw material of following mass fraction：25 parts of polyvinyl resin, Ethylene-butyl acrylate polymer 40
Part, with 2:20 parts of the nitrile rubber and butadiene-styrene rubber of 1 mass ratio mixing, 15 parts of modified kaolin, 5 parts of zinc oxide, O-phthalic
5 parts of dioctyl phthalate plasticizer, 10 parts of conductive black, 4 parts of cumyl peroxide crosslinking agent, 2 parts of benzoyl peroxide dispersant,
3 parts of Hinered phenols bisphenol-A antioxidant.
According to mass fraction, by nitrile rubber and butadiene-styrene rubber mixture, modified kaolin, zinc oxide, conductive black and
Antioxidant is mixed, and is then fed into banbury and is carried out banbury, and the rotating speed of banbury is 180r/min, and temperature is 80 DEG C.
Again by the material obtained after banburying and polyvinyl resin, Ethylene-butyl acrylate polymer, plasticizer and dispersant
Mixing is sent in kneader, and 15min is mediated under 120r/min rotating speed, and kneader temperature is 20 DEG C；Used in kneading process
Spray column sprays crosslinking agent, carries out infiltration processing, after crosslinking agent is completely absorbed, feeds the mixture into double screw extruder
Room temperature is cooled to after middle extruding pelletization, discharging, high-tension cable semiconductive shieldin material needed for obtaining.
Embodiment 2
60 parts of kaolin will be entered in 200 parts of water, 7 parts of cetyl trimethylammonium bromides, fully emulsified, Ran Houjia are added
Enter 9 parts of nano-sized carbons, be heated to 80 DEG C, stir 30min under 1000r/min rotating speed, drying and crushing is simultaneously crossed 350 mesh sieves and changed
Property kaolin.
Weigh the shielding material raw material of following mass fraction：30 parts of polyvinyl resin, Ethylene-butyl acrylate polymer 60
Part, with 2:25 parts of the nitrile rubber and butadiene-styrene rubber of 1 mass ratio mixing, 20 parts of modified kaolin, 8 parts of zinc oxide, O-phthalic
8 parts of dioctyl phthalate plasticizer, 15 parts of conductive black, 7 parts of cumyl peroxide crosslinking agent, 5 parts of benzoyl peroxide dispersant,
8 parts of Hinered phenols bisphenol-A antioxidant.
According to mass fraction, by nitrile rubber and butadiene-styrene rubber mixture, modified kaolin, zinc oxide, conductive black and
Antioxidant is mixed, and is then fed into banbury and is carried out banbury, and the rotating speed of banbury is 250r/min, and temperature is 90 DEG C.
Again by the material obtained after banburying and polyvinyl resin, Ethylene-butyl acrylate polymer, plasticizer and dispersant
Mixing is sent in kneader, and 20min is mediated under 140r/min rotating speed, and kneader temperature is 40 DEG C；Used in kneading process
Spray column sprays crosslinking agent, carries out infiltration processing, after crosslinking agent is completely absorbed, feeds the mixture into double screw extruder
Room temperature is cooled to after middle extruding pelletization, discharging, high-tension cable semiconductive shieldin material needed for obtaining.
Embodiment 3
50 parts of kaolin will be entered in 200 parts of water, 5 parts of cetyl trimethylammonium bromides, fully emulsified, Ran Houjia are added
Enter 8 parts of nano-sized carbons, be heated to 80 DEG C, stir 25min under 900r/min rotating speed, drying and crushing is simultaneously crossed 300 mesh sieves and changed
Property kaolin.
Weigh the shielding material raw material of following mass fraction：27 parts of polyvinyl resin, Ethylene-butyl acrylate polymer 50
Part, with 2:23 parts of the nitrile rubber and butadiene-styrene rubber of 1 mass ratio mixing, 17 parts of modified kaolin, 6 parts of zinc oxide, O-phthalic
7 parts of dioctyl phthalate plasticizer, 13 parts of conductive black, 6 parts of cumyl peroxide crosslinking agent, 3 parts of benzoyl peroxide dispersant,
5 parts of Hinered phenols bisphenol-A antioxidant.
According to mass fraction, rubber, modified kaolin, zinc oxide, conductive black and antioxidant are mixed, are then fed into
Banbury is carried out into banbury, the rotating speed of banbury is 220r/min, and temperature is 85 DEG C.
Again by the material obtained after banburying and polyvinyl resin, Ethylene-butyl acrylate polymer, plasticizer and dispersant
Mixing is sent in kneader, and 17min is mediated under 130r/min rotating speed, and kneader temperature is 30 DEG C；Used in kneading process
Spray column sprays crosslinking agent, carries out infiltration processing, after crosslinking agent is completely absorbed, feeds the mixture into double screw extruder
Room temperature is cooled to after middle extruding pelletization, discharging, high-tension cable semiconductive shieldin material needed for obtaining.
Embodiment 4
45 parts of kaolin will be entered in 200 parts of water, 6 parts of cetyl trimethylammonium bromides, fully emulsified, Ran Houjia are added
Enter 8 parts of nano-sized carbons, be heated to 80 DEG C, stir 27min under 850r/min rotating speed, drying and crushing is simultaneously crossed 350 mesh sieves and changed
Property kaolin.
Weigh the shielding material raw material of following mass fraction：28 parts of polyvinyl resin, Ethylene-butyl acrylate polymer 55
Part, with 2:24 parts of the nitrile rubber and butadiene-styrene rubber of 1 mass ratio mixing, 18 parts of modified kaolin, 7 parts of zinc oxide, O-phthalic
7 parts of dioctyl phthalate plasticizer, 13 parts of conductive black, 6 parts of cumyl peroxide crosslinking agent, 4 parts of benzoyl peroxide dispersant,
7 parts of Hinered phenols bisphenol-A antioxidant.
According to mass fraction, rubber, modified kaolin, zinc oxide, conductive black and antioxidant are mixed, are then fed into
Banbury is carried out into banbury, the rotating speed of banbury is 230r/min, and temperature is 88 DEG C.
Again by the material obtained after banburying and polyvinyl resin, Ethylene-butyl acrylate polymer, plasticizer and dispersant
Mixing is sent in kneader, and 18min is mediated under 135r/min rotating speed, and kneader temperature is 35 DEG C；Used in kneading process
Spray column sprays crosslinking agent, carries out infiltration processing, after crosslinking agent is completely absorbed, feeds the mixture into double screw extruder
Room temperature is cooled to after middle extruding pelletization, discharging, high-tension cable semiconductive shieldin material needed for obtaining.
Performance test
According to JB/T 10738-2007《Rated voltage 35kV and following cables with extruded insulation semiconductive shieldin material》Survey
Method for testing, is surveyed to indexs such as the tensile strength of embodiment, elongation at break, heat aging performance and 20 DEG C of specific insulations
Examination, obtains following result：
Table 1：The performance test results of the present embodiment
Learnt by data above, the semiconductive power cable material of the present embodiment, its tensile strength, elongation at break and heat ageing
Performance is excellent, can exceed that the requirement of national standard, and with relatively low specific insulation.
The specific embodiment of the present invention is described above.It is to be appreciated that the invention is not limited in above-mentioned
Particular implementation, those skilled in the art can make various deformations or amendments within the scope of the claims, this not shadow
Ring the substantive content of the present invention.
Claims (8)
1. a kind of high-tension cable semiconductive shieldin material, it is characterised in that according to mass fraction, the composition of the semiconductive shieldin material
For：25-30 parts of polyvinyl resin, 40-60 parts of Ethylene-butyl acrylate polymer, 20-25 parts of rubber, modified kaolin 15-20
Part, 5-8 parts of zinc oxide, 5-8 parts of plasticizer, 10-15 parts of conductive black, 4-7 parts of crosslinking agent, 2-5 parts of dispersant, antioxidant 3-
8 parts.
2. a kind of high-tension cable semiconductive shieldin material according to claim 1, it is characterised in that the semiconductive shieldin material into
Divide and be according to mass fraction：26-28 parts of polyvinyl resin, 50-55 parts of Ethylene-butyl acrylate polymer, 22-24 parts of rubber,
16-18 parts of modified kaolin, 6-7 parts of zinc oxide, 6-7 parts of plasticizer, 12-13 parts of conductive black, 5-6 parts of crosslinking agent, dispersant
3-4 parts, 5-7 parts of antioxidant.
3. a kind of high-tension cable semiconductive shieldin material according to claim 1, it is characterised in that the semiconductive shieldin material into
Divide and be according to mass fraction：27 parts of polyvinyl resin, 50 parts of Ethylene-butyl acrylate polymer, 23 parts of rubber, modified kaolin
17 parts, 7 parts of zinc oxide, 6 parts of plasticizer, 13 parts of conductive black, 6 parts of crosslinking agent, 4 parts of dispersant, 6 parts of antioxidant.
4. a kind of high-tension cable semiconductive shieldin material according to claim 1, it is characterised in that：The rubber is nitrile rubber
With the mixture of butadiene-styrene rubber, the two mass ratio is 2:1.
5. a kind of high-tension cable semiconductive shieldin material according to claim 1, it is characterised in that：The modifying kaolin side
Method is：40-60 parts of kaolin will be entered in 200 parts of water, 3-7 parts of cetyl trimethylammonium bromides are added, it is fully emulsified, then
7-9 parts of nano-sized carbons are added, 80 DEG C is heated to, 20-30min, drying and crushing and mistake is stirred under 800-1000r/min rotating speed
300-350 mesh sieves.
6. a kind of high-tension cable semiconductive shieldin material according to claim 1, it is characterised in that：The plasticizer is adjacent benzene two
Formic acid dioctyl ester；Crosslinking agent is cumyl peroxide.
7. a kind of high-tension cable semiconductive shieldin material according to claim 1, it is characterised in that：The dispersant is peroxidating
Benzoyl；Antioxidant is Hinered phenols bisphenol-A.
8. the preparation method of high-tension cable semiconductive shieldin material described in a kind of claim 1, it is characterised in that：Including following step
Suddenly：Raw material is weighed according to mass fraction, rubber, modified kaolin, zinc oxide, conductive black and antioxidant are mixed, then
It is sent in banbury and carries out banbury, the rotating speed of banbury is 180-250r/min, and temperature is 80-90 DEG C；
Again by the material obtained after banburying and polyvinyl resin, Ethylene-butyl acrylate polymer, plasticizer and dispersant
It is sent in kneader, 15-20min is mediated under 120-140r/min rotating speed, kneader temperature is 20-40 DEG C；Mediated
Crosslinking agent is sprayed with spray column in journey, infiltration processing is carried out, after crosslinking agent is completely absorbed, feeds the mixture into twin-screw
Room temperature is cooled to after extruding pelletization in extruder, discharging, high-tension cable semiconductive shieldin material needed for obtaining.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111333944A (en) * | 2020-03-13 | 2020-06-26 | 江阴市海峰电缆材料有限公司 | Semiconductive shielding material for high-voltage cable |
| CN112457642A (en) * | 2020-11-19 | 2021-03-09 | 马继 | Special semi-conductive weftless tape for transformer binding and preparation method thereof |
| CN114181469A (en) * | 2021-12-21 | 2022-03-15 | 江苏东方电缆材料有限公司 | Strippable external shielding material and production method thereof |
| CN114437451A (en) * | 2022-03-16 | 2022-05-06 | 浙江祥丰新材料科技有限公司 | Semiconductive EVA master batch for shielding and production method thereof |
| CN114763424A (en) * | 2021-01-15 | 2022-07-19 | 深圳市沃尔核材股份有限公司 | Cross-linked polyolefin rubber material, preparation method thereof and automobile cable using rubber material |
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