CN102898717B - Non-EVA substrate crosslinking semiconductive inner shielding material for 35kV cable and preparation thereof - Google Patents
Non-EVA substrate crosslinking semiconductive inner shielding material for 35kV cable and preparation thereof Download PDFInfo
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Abstract
The invention relates to a cable sheath material and its preparation, particularly to non-EVA substrate crosslinking semiconductive inner and outer shielding materials for a 35KV cable and preparation thereof. The inner shielding material provided in the invention comprises the following raw materials: ethylene terpolymer resin, plasticizer a, plasticizer b, a crosslinking agent, an antioxidant, polyethylene wax, conductive carbon black a, a high efficiency lubricating agent and conductive carbon black b. The outer shielding material additionally comprises nitrile rubber. The preparation method provided in the invention consists of: first stirring the plasticizer a, the conductive carbon black a, the conductive carbon black b and the antioxidant in low speed kneader, then mixing the rest components with the obtained mixture in a high speed kneader and carrying out stirring. Compared with existing products, the non-EVA substrate crosslinking semiconductive inner and outer shielding materials for a 35KV cable have smoother surfaces and are free of small granule phenomenon. The inner shielding material and a conductor can have a better bonding force. The cable extrusion speed is improved during three-layer co-extrusion, the volume resistivity is lower and the conductivity is excellent.
Description
Technical field
The present invention relates to a kind of cable jacket material and preparation method, particularly one non-EVA base material 35KV cable cross-linking type semiconduction inner shield material and external shield material and preparation method thereof.
Background technology
In power supply system, because high building stands in great numbers, hi-line and green belt all will take certain space in addition, so buried cable and overhead line just become the prevailing transmission means of urban electric power.For buried cable, because cable outer layer is often located in a humid environment, and be subject to moisture damage, meanwhile, the electric field stress that main insulating layer bears is large, overtension, electric field distribution along main insulating layer inwall is irregular, easy generation corona discharge, and insulation layer can be caused to puncture.For overhead line, the electric field stress that main insulating layer bears is little, but require surperficial resistance to solar light irradiation, resistance to thunderbolt is fast light heat aging performance is excellent, in order to protect major insulation, the inside and outside of main insulating layer must shield with semi-conductive layer.For this reason; IEC502 (1983) specifies: with isoprene-isobutylene rubber, polyethylene, crosslinked polyetylene insulated cable; voltage rating is when more than 1.8/3.0KV; use interior out semiconductor layer, its Main Function makes electric field distribution even, reduces strength of electric field; to reduce the air gap on conductor and insulation layer interface; improve the initial corona voltage of cable and the resistance to free discharge performance of cable, and reduce the temperature rise of insulation layer to a certain extent, to protect major insulation.
Semiconductive shielding layer is mainly divided into semi-conductive tape and two kinds, semiconduction plastics usually, semi-conductive tape is that fabricbase is wrapped, therefore to be not easily wrappedly convinced, and cause occurring inevitable space or pore between conductor, screen layer, insulation layer, these spaces or pore are under high-voltage field intensity, and in hole, gas ionizes, Damage to insulation layer, then generation tree branch discharge, finally causes insulation layer to puncture.So, general use semiconduction plastics as shielding material, and in current twisted polyethylene cable is produced, more advanced technique be adopt crosslinkable semiconductive shielding layer and insulation layer three-layer co-extruded go out, to guarantee closely cooperating each other, thus obtain the high pressure resistant cable of high-quality.But semiconduction plastics in the market generally use EVA as base material, this system cost compare is low, but because the VA of EVA resin easily decomposes by high temperature when extruding, and then can small-particle be produced from the teeth outwards, affect the work-ing life of cable, meanwhile, the semiconductive shieldin material of EVA base material, also be unfavorable for effective arrangement of graphitized carbon black, cause the conductivity shielding material to decline.
Summary of the invention
Object of the present invention, mainly according to the technological deficiency of extra-high-tension cable semi-conductive layer common in prior art, provides a kind of non-EVA base material 35KV cable cross-linking type semiconduction inner shield material and external shield material and respective preparation method.
In order to solve the problems of the technologies described above, the present invention adopts following technical scheme to realize:
A kind of non-EVA base material 35KV cable cross-linking type semiconduction inner shield material, its feed components title and parts by weight thereof are:
Ethene terpolymer resin 100 weight part;
Softening agent a 30-40 weight part;
Softening agent b 5-10 weight part;
Oxidation inhibitor 0.1-0.5 weight part; Be preferably 0.1-0.2 weight part;
Polyethylene wax 0.2-0.4 weight part;
Highly-efficient lubricant 0.5-1 weight part;
Graphitized carbon black a 10-30 weight part; Be preferably 20-25 weight part;
Graphitized carbon black b 5-10 weight part;
Linking agent 1-2.5 weight part.
A kind of non-EVA base material 35KV cable cross-linking type semiconduction external shield material, its feed components title and parts by weight thereof are:
Ethene terpolymer resin 100 weight part;
Softening agent a 20-40 weight part; Be preferably 30-40 weight part;
Softening agent b 5-10 weight part;
Oxidation inhibitor 0.1-0.5 weight part;
Polyethylene wax 0.2-0.4 weight part;
Highly-efficient lubricant 0.5-1 weight part;
Graphitized carbon black a 10-30 weight part; Be preferably 10-25 weight part;
Graphitized carbon black b 5-10 weight part;
Paracril 5-10 weight part; Be preferably 6-9 weight part;
Linking agent 1-2.5 weight part.
Preferably, described ethene terpolymer resin is Ethylene-butyl acrylate-carbonyl multipolymer, from the Ethylene-butyl acrylate-carbonyl multipolymer KS560T of MIT.
Preferably, described softening agent a is dioctyl phthalate (DOP); Described softening agent b is selected from white oil, and its main component is the mixture of the positive isoparaffin of C16 ~ C31, directly can buy on market.
Preferably, described highly-efficient lubricant is G60 lubricant, and its main component is sebacic acid oleyl alcohol ester, can be bought obtain by market.
Preferably, described oxidation inhibitor is Hinered phenols antioxidant, is preferably Hinered phenols dihydroxyphenyl propane.
Preferably, described graphitized carbon black a is 40B2 graphitized carbon black; Described graphitized carbon black b is superconductive carbon black 350G, all can be bought by market and obtain.
Preferably, in described paracril, the weight percentage of vinyl cyanide is 33%.
Preferably, described linking agent is dicumyl peroxide (DCP).
The preparation method of non-EVA base material 35KV cable cross-linking type semiconduction inner shield material of the present invention, comprises the steps:
1) softening agent a, graphitized carbon black a, graphitized carbon black b and oxidation inhibitor being stirred according to inserting in low speed kneader after proportioning mixing, being prepared into particulate state powder;
2) the particulate state powder be stirred and ethene terpolymer resin, softening agent b, polyethylene wax and highly-efficient lubricant are inserted in high-speed kneading machine to heat according to proportioning carry out high-speed stirring;
3) mixing raw material stirred directly is entered twin screw grain-making machine to carry out extruding making material;
4) extrude the finished product making material to send in DCP spray column, carry out DCP and infiltrate process;
5), after the finished absorbent after the complete granulation of DCP, blanking is packed.
The preparation method of non-EVA base material 35KV cable cross-linking type semiconduction external shield material of the present invention, comprises the steps:
1) softening agent a, graphitized carbon black a, graphitized carbon black b and oxidation inhibitor being stirred according to inserting in low speed kneader after proportioning mixing, being prepared into particulate state powder;
2) the particulate state powder be stirred and ethene terpolymer resin, softening agent b, polyethylene wax, highly-efficient lubricant and paracril are inserted in high-speed kneading machine to heat according to proportioning carry out high-speed stirring;
3) mixing raw material stirred directly is entered twin screw grain-making machine to carry out extruding making material;
4) extrude the finished product making material to send in DCP spray column, carry out DCP and infiltrate process;
5), after the finished absorbent after the complete granulation of DCP, blanking is packed.
In the preparation method of inner shield material of the present invention and external shield material,
Preferably, step 1) in, described low speed kneader to stir slurry rotating speed be 40-50 rev/min; Mediating temperature is 20 ~ 30 DEG C; Kneading time is 5-10min.
Preferably, step 2) in, described high-speed kneading machine to stir slurry rotating speed be 90-120 rev/min; Mediating temperature is 20 ~ 30 DEG C; Kneading time is 5-10min.
Preferably, each section of Heating temperature of described twin screw grain-making machine is divided equally from 90-125 DEG C by heating hop count.
Preferably, step 4) in, the temperature of described DCP spray column is 40 DEG C.
Low speed kneader of the present invention, high-speed kneading machine and twin screw grain-making machine are conventional mechanicals of the prior art, can directly buy from the market.DCP spray column of the present invention is that Kunshan Gong Tong environmental protection machinery company limited produces.
The present invention adds oxidation inhibitor in expecting in the inside and outside shielding of non-EVA base material 35KV cable cross-linking type semiconduction, can ethene suppressing terpolymer resin aging; Add polyethylene wax, the outer lubrication of material can be improved, improve the crowded linear velocity of product.The small product size resistivity prepared of extraordinary graphitized carbon black that the present invention adds is lower, and conductivity is excellent, surperficial smoother and do not have small particle phenomenon to occur.
The inside and outside shielding material of non-EVA base material 35KV cable cross-linking type semiconduction of the present invention is compared with currently available products, surface is more smooth without small particle phenomenon, inner shield material and conductor have better bonding force, external shield material and Insulation Material have more desirable peeling force, squeeze linear velocity time three-layer co-extruded to be improved, volume specific resistance is lower, and conductivity is excellent, widespread use can make the inside and outside shielding material of 35KV cable cross-linking type semiconduction.
Adopt in the preparation method of inner shield material of the present invention and external shield material and first softening agent a, graphitized carbon black a, graphitized carbon black b and oxidation inhibitor are stirred in low speed kneader, and then remaining component is mixed in high-speed kneading machine stirs, effectively can reduce the pollution to workshop condition by this way, and the dispersiveness of graphitized carbon black is better after pre-mixing, the conductivity of the product shielding material of preparation is also more excellent.
The invention has the beneficial effects as follows: (1) the present invention meets during JB/T 10738-2007 standard specifies the performance requriements of expecting about shielding, and processing characteristics is excellent; (2) possess environmental-protecting performance, ROHS standard can be met; (3) adopt first through the method that softening agent stirs, to the less pollution in workshop in production process, ensure that product conductivity is stablized simultaneously; (4) have very excellent conductivity, volume specific resistance is lower, extrudes cable surface better.
Embodiment
Set forth the present invention further below in conjunction with specific embodiment, should be understood that these embodiments are only not used in for illustration of the present invention and limit the scope of the invention.
Embodiment 1
Non-EVA base material 35KV cable cross-linking type semiconduction inner shield material, in 100 kilograms of ethene terpolymer resins, dioctyl phthalate (DOP) 40 kilograms, white oil (the positive isoparaffin of C16 ~ C31) 8 kilograms, 0.2 kilogram, Hinered phenols dihydroxyphenyl propane oxidation inhibitor, polyethylene wax 0.3 kilogram, highly-efficient lubricant G60 0.5 kilogram, graphitized carbon black 4,0B2 24 kilograms, graphitized carbon black 350G 10 kilograms, crosslink agent DCP 1.5 kilograms.
Preparation method is: a, by dioctyl phthalate (DOP) 40 kilograms, graphitized carbon black 4,0B2 24 kilograms, graphitized carbon black 350G10 kilogram, 0.2 kilogram, oxidation inhibitor, insert in low speed kneader and carry out stirring (low speed kneader to stir slurry rotating speed be 50 revs/min; It is 20 ~ 30 DEG C that temperature during kneading controls; Kneading time is 5min), be prepared into the powder with certain granules shape; B, by the particulate state powder that is stirred and ethene terpolymer resin 100 kilograms, the positive isoparaffin of C16 ~ C31 8 kilograms, polyethylene wax 0.3 kilogram, highly-efficient lubricant G60 0.5 kilogram to insert in high-speed kneading machine heating carry out high-speed stirring (high-speed kneading machine to stir slurry rotating speed be 90 revs/min; It is 20 ~ 30 DEG C that temperature during kneading controls; Kneading time is 10min); C, the raw material stirred directly entered twin screw grain-making machine and carry out extruding and make material (twin screw grain-making machine each section of Heating temperature is divided equally from 90-125 DEG C by heating hop count); D, extrude the finished product of making material, after drying, shielding material is sent into DCP spray column (temperature of DCP spray column is 40 DEG C), carry out the infiltration process of DCP, then with aluminum-plastic packaged, then put in storage.
Embodiment 2
Non-EVA base material 35KV cable cross-linking type semiconduction inner shield material, in 100 kilograms of ethene terpolymer resins, dioctyl phthalate (DOP) 35 kilograms, white oil (the positive isoparaffin of C16 ~ C31) 7.5 kilograms, 0.2 kilogram, Hinered phenols dihydroxyphenyl propane oxidation inhibitor, polyethylene wax 0.3 kilogram, highly-efficient lubricant G60 0.5 kilogram, graphitized carbon black 4,0B2 25 kilograms, graphitized carbon black 350G 7 kilograms, crosslink agent DCP 2.0 kilograms.
Preparation method is: a, by dioctyl phthalate (DOP) 35 kilograms, graphitized carbon black 4,0B2 25 kilograms, graphitized carbon black 350G7 kilogram, 0.2 kilogram, oxidation inhibitor, insert in low speed kneader and carry out stirring (low speed kneader to stir slurry rotating speed be 50 revs/min; It is 20 ~ 30 DEG C that temperature during kneading controls; Kneading time is 5min), be prepared into the powder with certain granules shape; B, by the particulate state powder that is stirred and ethene terpolymer resin 100 kilograms, the positive isoparaffin of C16 ~ C31 7.5 kilograms, polyethylene wax 0.3 kilogram, highly-efficient lubricant G60 0.5 kilogram to insert in high-speed kneading machine heating carry out high-speed stirring (high-speed kneading machine to stir slurry rotating speed be 90 revs/min; It is 20 ~ 30 DEG C that temperature during kneading controls; Kneading time is 10min); C, the raw material stirred directly entered twin screw grain-making machine and carry out extruding and make material (twin screw grain-making machine each section of Heating temperature is divided equally from 90-125 DEG C by heating hop count); D, extrude the finished product of making material, after drying, shielding material is sent into DCP spray column (temperature of DCP spray column is 40 DEG C), carry out the infiltration process of DCP, then with aluminum-plastic packaged, then put in storage.
Embodiment 3
Non-EVA base material 35KV cable cross-linking type semiconduction inner shield material, in 100 kilograms of ethene terpolymer resins, dioctyl phthalate (DOP) 30 kilograms, white oil (the positive isoparaffin of C16 ~ C31) 5 kilograms, 0.1 kilogram, Hinered phenols dihydroxyphenyl propane oxidation inhibitor, polyethylene wax 0.2 kilogram, highly-efficient lubricant G600.7 kilogram, graphitized carbon black 4,0B2 20 kilograms, graphitized carbon black 350G 5 kilograms, crosslink agent DCP 2.5 kilograms.
Preparation method is: a, by dioctyl phthalate (DOP) 30 kilograms, graphitized carbon black 4,0B2 20 kilograms, graphitized carbon black 350G5 kilogram, 0.1 kilogram, oxidation inhibitor, insert in low speed kneader and carry out stirring (low speed kneader to stir slurry rotating speed be 40 revs/min; It is 20 ~ 30 DEG C that temperature during kneading controls; Kneading time is 10min), be prepared into the powder with certain granules shape; B, by the particulate state powder that is stirred and ethene terpolymer resin 100 kilograms, the positive isoparaffin of C16 ~ C31 5 kilograms, polyethylene wax 0.2 kilogram, highly-efficient lubricant G600.7 kilogram to insert in high-speed kneading machine heating carry out high-speed stirring (high-speed kneading machine to stir slurry rotating speed be 100 revs/min; It is 20 ~ 30 DEG C that temperature during kneading controls; Kneading time is 10min); C, the raw material stirred directly entered twin screw grain-making machine and carry out extruding and make material (twin screw grain-making machine each section of Heating temperature is divided equally from 90-125 DEG C by heating hop count); D, extrude the finished product of making material, after drying, shielding material is sent into DCP spray column (temperature of DCP spray column is 40 DEG C), carry out the infiltration process of DCP, then with aluminum-plastic packaged, then put in storage.
Embodiment 4
Non-EVA base material 35KV cable cross-linking type semiconduction inner shield material, in 100 kilograms of ethene terpolymer resins, dioctyl phthalate (DOP) 36 kilograms, white oil (the positive isoparaffin of C16 ~ C31) 10 kilograms, 0.15 kilogram, Hinered phenols dihydroxyphenyl propane oxidation inhibitor, polyethylene wax 0.4 kilogram, highly-efficient lubricant G601 kilogram, graphitized carbon black 4,0B2 20 kilograms, graphitized carbon black 350G 8 kilograms, crosslink agent DCP 1.0 kilograms.
Preparation method is: a, by dioctyl phthalate (DOP) 36 kilograms, graphitized carbon black 4,0B2 20 kilograms, graphitized carbon black 350G8 kilogram, 0.15 kilogram, oxidation inhibitor, insert in low speed kneader and carry out stirring (low speed kneader to stir slurry rotating speed be 50 revs/min; It is 20 ~ 30 DEG C that temperature during kneading controls; Kneading time is 10min), be prepared into the powder with certain granules shape; B, by the particulate state powder that is stirred and ethene terpolymer resin 100 kilograms, the positive isoparaffin of C16 ~ C31 10 kilograms, polyethylene wax 0.4 kilogram, highly-efficient lubricant G60 1 kilogram to insert in high-speed kneading machine heating carry out high-speed stirring (high-speed kneading machine to stir slurry rotating speed be 120 revs/min; It is 20 ~ 30 DEG C that temperature during kneading controls; Kneading time is 5min); C, the raw material stirred directly entered twin screw grain-making machine and carry out extruding and make material (twin screw grain-making machine each section of Heating temperature is divided equally from 90-125 DEG C by heating hop count); D, extrude the finished product of making material, after drying, shielding material is sent into DCP spray column (temperature of DCP spray column is 40 DEG C), carry out the infiltration process of DCP, then with aluminum-plastic packaged, then put in storage.
The leading indicator of the non-EVA base material 35KV cable cross-linking type semiconduction inner shield material of embodiment 1-4 is as shown in table 1 below.
Table 1
As can be seen from Table 1, the non-EVA base material 35KV cable cross-linking type semiconduction inner shield material of embodiment 1-4 gained meets during JB/T 10738-2007 standard specifies the performance requriements of expecting about shielding, and processing characteristics is excellent; And there is very excellent conductivity, volume specific resistance is lower, extrudes cable surface better, possesses environmental-protecting performance, meet ROHS standard; Along with the minimizing of graphitized carbon black amount, 20 DEG C and 90 DEG C time volume specific resistance rise, but within indication range all thereupon.
Embodiment 5
Non-EVA base material 35KV cable cross-linking type semiconduction external shield material, in 100 kilograms of ethene terpolymer resins, dioctyl phthalate (DOP) 30 kilograms, white oil (the positive isoparaffin of C16 ~ C31) 5 kilograms, 0.1 kilogram, Hinered phenols dihydroxyphenyl propane oxidation inhibitor, polyethylene wax 0.2 kilogram, highly-efficient lubricant G60 0.7 kilogram, graphitized carbon black 4,0B2 10 kilograms, graphitized carbon black 350G 5 kilograms, paracril 6 kilograms, crosslink agent DCP 1.5 kilograms.
Preparation method is: a, by dioctyl phthalate (DOP) 30 kilograms, graphitized carbon black 4,0B2 10 kilograms, graphitized carbon black 350G7 kilogram, 0.2 kilogram, oxidation inhibitor, insert in low speed kneader and carry out stirring (low speed kneader to stir slurry rotating speed be 50 revs/min; Temperature during kneading is 20 ~ 30 DEG C; Kneading time is 5min), be prepared into the powder with certain granules shape; B, by the particulate state powder that is stirred and ethene terpolymer resin 100 kilograms, the positive isoparaffin of C16 ~ C31 5 kilograms, polyethylene wax 0.2 kilogram, highly-efficient lubricant G60 0.7 kilogram, paracril 6 kilograms to insert in high-speed kneading machine heating carry out high-speed stirring (high-speed kneading machine to stir slurry rotating speed be 90 revs/min; Temperature during kneading is 20 ~ 30 DEG C; Kneading time is 10min); C, the raw material stirred directly entered twin screw grain-making machine and carry out extruding and make material (twin screw grain-making machine each section of Heating temperature is divided equally from 90-125 DEG C by heating hop count); D, extrude the finished product of making material, after drying, shielding material is sent into DCP spray column (temperature of DCP spray column is 40 DEG C), carry out the infiltration process of DCP, then with aluminum-plastic packaged, then put in storage.
Embodiment 6
Non-EVA base material 35KV cable cross-linking type semiconduction external shield material, in 100 kilograms of ethene terpolymer resins, dioctyl phthalate (DOP) 36 kilograms, white oil (the positive isoparaffin of C16 ~ C31) 10 kilograms, 0.15 kilogram, Hinered phenols dihydroxyphenyl propane oxidation inhibitor, polyethylene wax 0.4 kilogram, highly-efficient lubricant G60 1 kilogram, graphitized carbon black 4,0B2 20 kilograms, graphitized carbon black 350G 9 kilograms, paracril 9 kilograms, crosslink agent DCP 2.0 kilograms.
Preparation method is: a, by dioctyl phthalate (DOP) 36 kilograms, graphitized carbon black 4,0B2 20 kilograms, graphitized carbon black 350G9 kilogram, 0.15 kilogram, oxidation inhibitor, insert in low speed kneader and carry out stirring (low speed kneader to stir slurry rotating speed be 50 revs/min; Temperature during kneading is 20 ~ 30 DEG C; Kneading time is 5min), be prepared into the powder with certain granules shape; B, by the particulate state powder that is stirred and ethene terpolymer resin 100 kilograms, the positive isoparaffin of C16 ~ C31 10 kilograms, polyethylene wax 0.4 kilogram, highly-efficient lubricant G601 kilogram, paracril 9 kilograms to insert in high-speed kneading machine heating carry out high-speed stirring (high-speed kneading machine to stir slurry rotating speed be 90 revs/min; Temperature during kneading is 20 ~ 30 DEG C; Kneading time is 10min); C, the raw material stirred directly entered twin screw grain-making machine and carry out extruding and make material (twin screw grain-making machine each section of Heating temperature is divided equally from 90-125 DEG C by heating hop count); D, extrude the finished product of making material, after drying, shielding material is sent into DCP spray column (temperature of DCP spray column is 40 DEG C), carry out the infiltration process of DCP, then with aluminum-plastic packaged, then put in storage.
Embodiment 7
Non-EVA base material 35KV cable cross-linking type semiconduction external shield material, in 100 kilograms of ethene terpolymer resins, dioctyl phthalate (DOP) 40 kilograms, white oil (the positive isoparaffin of C16 ~ C31) 8 kilograms, 0.2 kilogram, Hinered phenols dihydroxyphenyl propane oxidation inhibitor, polyethylene wax 0.3 kilogram, highly-efficient lubricant G60 0.5 kilogram, graphitized carbon black 4,0B2 24 kilograms, graphitized carbon black 350G 10 kilograms, paracril 6 kilograms, crosslink agent DCP 2.5 kilograms.
Preparation method is: a, by dioctyl phthalate (DOP) 40 kilograms, graphitized carbon black 4,0B2 24 kilograms, graphitized carbon black 350G10 kilogram, 0.2 kilogram, oxidation inhibitor, insert in low speed kneader and carry out stirring (low speed kneader to stir slurry rotating speed be 40 revs/min; Temperature during kneading is 20 ~ 30 DEG C; Kneading time is 10min), be prepared into the powder with certain granules shape; B, by the particulate state powder that is stirred and ethene terpolymer resin 100 kilograms, the positive isoparaffin of C16 ~ C31 8 kilograms, polyethylene wax 0.3 kilogram, highly-efficient lubricant G60 0.5 kilogram, paracril 6 kilograms to insert in high-speed kneading machine heating carry out high-speed stirring (high-speed kneading machine to stir slurry rotating speed be 100 revs/min; Temperature during kneading is 20 ~ 30 DEG C; Kneading time is 10min); C, the raw material stirred directly entered twin screw grain-making machine and carry out extruding and make material (twin screw grain-making machine each section of Heating temperature is divided equally from 90-125 DEG C by heating hop count); D, extrude the finished product of making material, after drying, shielding material is sent into DCP spray column (temperature of DCP spray column is 40 DEG C), carry out the infiltration process of DCP, then with aluminum-plastic packaged, then put in storage.
Embodiment 8
Non-EVA base material 35KV cable cross-linking type semiconduction external shield material, in 100 kilograms of ethene terpolymer resins, dioctyl phthalate (DOP) 35 kilograms, white oil (the positive isoparaffin of C16 ~ C31) 7.5 kilograms, 0.2 kilogram, Hinered phenols dihydroxyphenyl propane oxidation inhibitor, polyethylene wax 0.3 kilogram, highly-efficient lubricant G60 0.5 kilogram, graphitized carbon black 4,0B2 25 kilograms, graphitized carbon black 350G 7 kilograms, paracril 9 kilograms, crosslink agent DCP 1.0 kilograms.
Preparation method is: a, by dioctyl phthalate (DOP) 35 kilograms, graphitized carbon black 4,0B2 25 kilograms, graphitized carbon black 350G7 kilogram, 0.2 kilogram, oxidation inhibitor, insert in low speed kneader and carry out stirring (low speed kneader to stir slurry rotating speed be 50 revs/min; Temperature during kneading is 20 ~ 30 DEG C; Kneading time is 8min), be prepared into the powder with certain granules shape; B, by the particulate state powder that is stirred and ethene terpolymer resin 100 kilograms, the positive isoparaffin of C16 ~ C31 7.5 kilograms, polyethylene wax 0.3 kilogram, highly-efficient lubricant G60 0.5 kilogram, paracril 9 kilograms to insert in high-speed kneading machine heating carry out high-speed stirring (high-speed kneading machine to stir slurry rotating speed be 120 revs/min; Temperature during kneading is 20 ~ 30 DEG C; Kneading time is 5min); C, the raw material stirred directly entered twin screw grain-making machine and carry out extruding and make material (twin screw grain-making machine each section of Heating temperature is divided equally from 90-125 DEG C by heating hop count); D, extrude the finished product of making material, after drying, shielding material is sent into DCP spray column (temperature of DCP spray column is 40 DEG C), carry out the infiltration process of DCP, then with aluminum-plastic packaged, then put in storage.
The leading indicator of the non-EVA base material 35KV cable cross-linking type semiconduction external shield material of embodiment 5-8 is as shown in table 2 below.
Table 2
As can be seen from Table 2, non-EVA base material 35KV cable cross-linking type semiconduction external shield material of the present invention meets during JB/T10738-2007 standard specifies the performance requriements of expecting about shielding, and processing characteristics is excellent; Have very excellent conductivity, volume specific resistance is lower, extrudes cable surface better; Possess environmental-protecting performance, meet ROHS standard, ensure that product conductivity is stablized simultaneously; When the add-on of Powdered acrylonitrile-butadiene rubber reaches 6 ~ 9 parts, stripping strength all obviously reduces, and is conducive to the use of product.
Claims (6)
1. the non-EVA base material cross-linking type semiconduction inner shield material of 35KV cable, its raw material comprises the component of following parts by weight:
Described softening agent a is dioctyl phthalate (DOP); Described softening agent b is selected from white oil, and its main component is the mixture of the positive isoparaffin of C16 ~ C31; Described highly-efficient lubricant is G60 lubricant, and its main component is sebacic acid oleyl alcohol ester; Described linking agent is dicumyl peroxide DCP.
2. the non-EVA base material cross-linking type semiconduction inner shield material of 35KV cable as claimed in claim 1, it is characterized in that, described oxidation inhibitor is Hinered phenols dihydroxyphenyl propane.
3. the non-EVA base material cross-linking type semiconduction inner shield material of 35KV cable as claimed in claim 1, it is characterized in that, described graphitized carbon black a is 40B2 graphitized carbon black; Described graphitized carbon black b is superconductive carbon black 350G.
4. the 35KV cable preparation method of non-EVA base material cross-linking type semiconduction inner shield material as described in as arbitrary in claim 1-3, comprises the steps:
1) softening agent a, graphitized carbon black a, graphitized carbon black b and oxidation inhibitor being stirred according to inserting in low speed kneader after proportioning mixing, being prepared into particulate state powder;
2) the particulate state powder be stirred and ethene terpolymer resin, softening agent b, polyethylene wax and highly-efficient lubricant are inserted in high-speed kneading machine to heat according to proportioning carry out high-speed stirring;
3) mixing raw material stirred directly is entered in twin screw grain-making machine carry out extruding making material;
4) extrude the finished product making material to send in DCP spray column, carry out DCP and infiltrate process;
5), after the finished absorbent after the complete granulation of DCP, blanking is packed.
5. preparation method as claimed in claim 4, is characterized in that, step 1) in, described low speed kneader to stir slurry rotating speed be 40-50 rev/min; Mediating temperature is 20 ~ 30 DEG C; Kneading time is 5-10min; Step 2) in, described high-speed kneading machine stir slurry rotating speed be 90-120 rev/min; Mediating temperature is 20 ~ 30 DEG C; Kneading time is 5-10min.
6. preparation method as claimed in claim 4, is characterized in that, step 3) in, each section of Heating temperature of described twin screw grain-making machine is divided equally from 90-125 DEG C according to heating hop count; Step 4) in, the temperature of described DCP spray column is 40 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110212529.6A CN102898717B (en) | 2011-07-27 | 2011-07-27 | Non-EVA substrate crosslinking semiconductive inner shielding material for 35kV cable and preparation thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110212529.6A CN102898717B (en) | 2011-07-27 | 2011-07-27 | Non-EVA substrate crosslinking semiconductive inner shielding material for 35kV cable and preparation thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102898717A CN102898717A (en) | 2013-01-30 |
| CN102898717B true CN102898717B (en) | 2015-04-15 |
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| CN104361927B (en) * | 2014-11-25 | 2017-09-12 | 四川明星电缆股份有限公司 | Shield machine rubber sleeve flexible cable |
| CN104900334B (en) * | 2015-05-08 | 2017-04-12 | 大连联合高分子材料有限公司 | 10-35kv insulating tubular bus and manufacturing method thereof |
| CN105038058A (en) * | 2015-06-18 | 2015-11-11 | 天津市安正电力高分子材料有限公司 | Ultra-smooth high-voltage semi-conductive external shielding material and preparation method thereof |
| CN105038057A (en) * | 2015-06-18 | 2015-11-11 | 天津市安正电力高分子材料有限公司 | Ultra-smooth high-voltage semi-conductive external shielding material and preparation method thereof |
| CN114805999B (en) * | 2022-05-13 | 2023-09-19 | 欧宝聚合物江苏有限公司 | Cable material capable of being immersed in fluorinated coolant and preparation method thereof |
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| CN101633754A (en) * | 2009-05-22 | 2010-01-27 | 上海凯波特种电缆料厂有限公司 | Oil resistant type silane natural cross-linking low smoke halogen-free flame retardant polyolefin cable material and preparation method thereof |
| CN101942142A (en) * | 2010-08-16 | 2011-01-12 | 江阴市海江高分子材料有限公司 | Preparation method of semiconductive shielding material for 110kV and above voltage class cables |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101633754A (en) * | 2009-05-22 | 2010-01-27 | 上海凯波特种电缆料厂有限公司 | Oil resistant type silane natural cross-linking low smoke halogen-free flame retardant polyolefin cable material and preparation method thereof |
| CN101942142A (en) * | 2010-08-16 | 2011-01-12 | 江阴市海江高分子材料有限公司 | Preparation method of semiconductive shielding material for 110kV and above voltage class cables |
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