CN102898717A - Non-EVA substrate crosslinking semiconductive inner shielding material for 35kV cable and preparation thereof - Google Patents
Non-EVA substrate crosslinking semiconductive inner shielding material for 35kV cable and preparation thereof Download PDFInfo
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Abstract
The invention relates to a cable sheath material and its preparation, particularly to non-EVA substrate crosslinking semiconductive inner and outer shielding materials for a 35kV cable and preparation thereof. The inner shielding material provided in the invention comprises the following raw materials: ethylene terpolymer resin, plasticizer a, plasticizer b, a crosslinking agent, an antioxidant, polyethylene wax, conductive carbon black a, a high efficiency lubricating agent and conductive carbon black b. The outer shielding material additionally comprises nitrile rubber. The preparation method provided in the invention consists of: first stirring the plasticizer a, the conductive carbon black a, the conductive carbon black b and the antioxidant in low speed kneader, then mixing the rest components with the obtained mixture in a high speed kneader and carrying out stirring. Compared with existing products, the non-EVA substrate crosslinking semiconductive inner and outer shielding materials for a 35kV cable have smoother surfaces and are free of small granule phenomenon. The inner shielding material and a conductor can have a better bonding force. The cable extrusion speed is improved during three-layer co-extrusion, the volume resistivity is lower and the conductivity is excellent.
Description
Technical field
The present invention relates to a kind of cable jacket material and preparation method, particularly a kind of non-EVA base material 35KV cable cross-linking type semiconduction inner shield material and external shield material and preparation method thereof.
Background technology
In power supply system, because high building stands in great numbers, hi-line and green belt all will take certain space in addition, so buried cable and overhead line have just become the main transmission media of urban electric power.For buried cable, because the frequent place of cable outer layer in a humid environment, and be subject to moisture destruction, simultaneously, the electric field stress that main insulating layer bears is large, overtension, electric field distribution along the main insulating layer inwall is irregular, and easy generation corona discharge can cause insulation layer to puncture.For overhead line, the electric field stress that main insulating layer bears is little, but require surperficial anti-solar light irradiation, anti-thunderbolt is fast light heat aging performance is excellent, in order to protect major insulation, the inside and outside of main insulating layer must shield with semi-conductive layer.For this reason; IEC502 (1983) regulation: with isoprene-isobutylene rubber, polyethylene, crosslinked polyetylene insulated cable; voltage rating is when 1.8/3.0KV is above; use interior out semiconductor layer, its Main Function is to make electric field distribution even, reduces strength of electric field; to reduce the air gap on conductor and the insulation layer interface; improve the initial corona voltage of cable and the anti-free discharge performance of cable, and reduce to a certain extent the temperature rise of insulation layer, with protection major insulation.
Semiconductive shielding layer mainly is divided into two kinds in semi-conductive tape and semiconduction plastics usually, semi-conductive tape is that fabricbase is wrapped, therefore be difficult for wrappedly being convinced, and cause occurring between conductor, screen layer, the insulation layer inevitable space or pore, these spaces or pore are under the high-voltage field intensity, and gas ionizes in the hole, the Damage to insulation layer, then the generation tree branch discharge causes insulation layer to puncture at last.So, normal operation semiconduction plastics are as shielding material, and in present twisted polyethylene cable is produced, and advanced technique is to adopt the three-layer co-extruded of crosslinkable semiconductive shielding layer and insulation layer to go out, guaranteeing closely cooperating each other, thereby obtain the high pressure resistant cable of high-quality.But semiconduction plastics normal operation EVA in the market is as base material, this system cost compare is low, but owing to the VA of EVA resin is decomposed by high temperature easily when extruding, and then can produce small-particle from the teeth outwards, affect the work-ing life of cable, simultaneously, the semiconductive shieldin material of EVA base material, also be unfavorable for effective arrangement of graphitized carbon black, the conductivity that causes shielding material descends.
Summary of the invention
Purpose of the present invention mainly is the technological deficiency according to common extra-high-tension cable semi-conductive layer in the prior art, and a kind of non-EVA base material 35KV cable cross-linking type semiconduction inner shield material and external shield material and preparation method separately are provided.
In order to solve the problems of the technologies described above, the present invention adopts following technical scheme to realize:
A kind of non-EVA base material 35KV cable cross-linking type semiconduction inner shield material, each component title of its raw material and parts by weight thereof are:
Ethene terpolymer resin 100 weight parts;
Softening agent a 30-40 weight part;
Softening agent b 5-10 weight part;
Oxidation inhibitor 0.1-0.5 weight part; Be preferably the 0.1-0.2 weight part;
Polyethylene wax 0.2-0.4 weight part;
Highly-efficient lubricant 0.5-1 weight part;
Graphitized carbon black a 10-30 weight part; Be preferably the 20-25 weight part;
Graphitized carbon black b 5-10 weight part;
Linking agent 1-2.5 weight part.
A kind of non-EVA base material 35KV cable cross-linking type semiconduction external shield material, each component title of its raw material and parts by weight thereof are:
Ethene terpolymer resin 100 weight parts;
Softening agent a 20-40 weight part; Be preferably the 30-40 weight part;
Softening agent b 5-10 weight part;
Oxidation inhibitor 0.1-0.5 weight part;
Polyethylene wax 0.2-0.4 weight part;
Highly-efficient lubricant 0.5-1 weight part;
Graphitized carbon black a 10-30 weight part; Be preferably the 10-25 weight part;
Graphitized carbon black b 5-10 weight part;
Paracril 5-10 weight part; Be preferably the 6-9 weight part;
Linking agent 1-2.5 weight part.
Better, described ethene terpolymer resin is ethylene-propylene acid butyl ester-carbonyl multipolymer, from the ethylene-propylene acid butyl ester of MIT-carbonyl multipolymer KS560T.
Better, described softening agent a is dioctyl phthalate (DOP); Described softening agent b is selected from white oil, and its main component is the mixture of the positive isoparaffin of C16～C31, can directly buy on market.
Better, described highly-efficient lubricant is the G60 lubricant, its main component is sebacic acid oleyl alcohol ester, can buy by market to obtain.
Better, described oxidation inhibitor is Hinered phenols antioxidant, is preferably the Hinered phenols dihydroxyphenyl propane.
Better, described graphitized carbon black a is the 40B2 graphitized carbon black; Described graphitized carbon black b is superconductive carbon black 350G, all can buy by market to obtain.
Better, the weight percentage of vinyl cyanide is 33% in the described paracril.
Better, described linking agent is dicumyl peroxide (DCP).
Non-EVA base material 35KV cable of the present invention comprises the steps: with the preparation method of cross-linking type semiconduction inner shield material
1) inserts in the low speed kneader after softening agent a, graphitized carbon black a, graphitized carbon black b and oxidation inhibitor are mixed according to proportioning and stir, be prepared into the particulate state powder;
2) the particulate state powder that stirs and ethene terpolymer resin, softening agent b, polyethylene wax and highly-efficient lubricant are inserted in the high-speed kneading machine heating according to proportioning and carry out high-speed stirring;
3) mixing raw material that stirs directly being entered the twin screw grain-making machine extrudes and makes material;
4) extrude the finished product of making material and send in the DCP spray column, carry out DCP and infiltrate processing;
5) after the finished product after the complete granulation of DCP absorbs, the blanking packing.
Non-EVA base material 35KV cable of the present invention comprises the steps: with the preparation method of cross-linking type semiconduction external shield material
1) inserts in the low speed kneader after softening agent a, graphitized carbon black a, graphitized carbon black b and oxidation inhibitor are mixed according to proportioning and stir, be prepared into the particulate state powder;
2) the particulate state powder that stirs and ethene terpolymer resin, softening agent b, polyethylene wax, highly-efficient lubricant and paracril are inserted in the high-speed kneading machine heating according to proportioning and carry out high-speed stirring;
3) mixing raw material that stirs directly being entered the twin screw grain-making machine extrudes and makes material;
4) extrude the finished product of making material and send in the DCP spray column, carry out DCP and infiltrate processing;
5) after the finished product after the complete granulation of DCP absorbs, the blanking packing.
Among the preparation method of inner shield material of the present invention and external shield material,
Better, step 1) in, described low speed kneader to stir the slurry rotating speed be 40-50 rev/min; Mediating temperature is 20～30 ℃; The kneading time is 5-10min.
Better, step 2) in, described high-speed kneading machine to stir the slurry rotating speed be 90-120 rev/min; Mediating temperature is 20～30 ℃; The kneading time is 5-10min.
Better, each section Heating temperature of described twin screw grain-making machine is divided equally from 90-125 ℃ by the heating hop count.
Better, step 4) in, the temperature of described DCP spray column is 40 ℃.
Low speed kneader of the present invention, high-speed kneading machine and twin screw grain-making machine are conventional mechanical device of the prior art, can directly buy from the market.DCP spray column of the present invention is that the Kunshan worker environmental protection machinery company limited that unites produces.
The present invention is by adding oxidation inhibitor with the cross-linking type semiconduction in the inside and outside shielding material at non-EVA base material 35KV cable, can the ethene suppressing terpolymer resin aging; Add polyethylene wax, can improve the outer lubricated of material, improve the crowded linear velocity of product.The small product size resistivity of the extraordinary graphitized carbon black preparation that the present invention adds is lower, and conductivity is excellent, surperficial smoother and do not have small particle phenomenon to occur.
Non-EVA base material 35KV cable of the present invention is compared with currently available products with the inside and outside shielding material of cross-linking type semiconduction, the surface is Paint Gloss without small particle phenomenon, inner shield material and conductor have better bonding force, external shield material and Insulation Material have more desirable peeling force, squeezing linear velocity when three-layer co-extruded is improved, volume specific resistance is lower, and conductivity is excellent, but the 35KV cable inside and outside shielding material of cross-linking type semiconduction is made in widespread use.
Adopt among the preparation method of inner shield material of the present invention and external shield material and first softening agent a, graphitized carbon black a, graphitized carbon black b and oxidation inhibitor are stirred in the low speed kneader, and then remaining component is mixed in the high-speed kneading machine stirs, can effectively reduce by this way the pollution to workshop condition, and the dispersiveness of graphitized carbon black is better after the pre-mixing, and the conductivity of the product shielding material of preparation is also more excellent.
The invention has the beneficial effects as follows: (1) the present invention meets the performance requriements of expecting about shielding in the JB/T 10738-2007 standard code, and processing characteristics is good; (2) possess environmental-protecting performance, can meet the ROHS standard; (3) adopt the method that stirs through softening agent first, to the less pollution in workshop, guarantee that simultaneously the product conductivity is stable in the production process; (4) have very good conductivity, volume specific resistance is lower, extrudes cable surface better.
Embodiment
Further set forth the present invention below in conjunction with specific embodiment, should be understood that these embodiment only are used for explanation the present invention and are not used in restriction protection scope of the present invention.
Embodiment 1
Non-EVA base material 35KV cable cross-linking type semiconduction inner shield material, in 100 kilograms of ethene terpolymer resins, 40 kilograms of dioctyl phthalate (DOP)s, 8 kilograms of white oils (the positive isoparaffin of C16～C31), 0.2 kilogram in Hinered phenols dihydroxyphenyl propane oxidation inhibitor, 0.3 kilogram of polyethylene wax, 0.5 kilogram of highly-efficient lubricant G60,24 kilograms of graphitized carbon black 40B2,10 kilograms of graphitized carbon black 350G, 1.5 kilograms of crosslink agent DCPs.
The preparation method is: a, with 40 kilograms of dioctyl phthalate (DOP)s, 24 kilograms of graphitized carbon black 40B2, graphitized carbon black 350G10 kilogram, 0.2 kilogram in oxidation inhibitor, insert in the low speed kneader and stir (the low speed kneader to stir the slurry rotating speed be 50 rev/mins; Temperature during kneading is controlled to be 20～30 ℃; The kneading time is 5min), be prepared into the powder with certain granules shape; B, with 100 kilograms of the particulate state powder that stirs and ethene terpolymer resins, 8 kilograms of the positive isoparaffins of C16～C31,0.3 kilogram of polyethylene wax, 0.5 kilogram of highly-efficient lubricant G60 insert heating in the high-speed kneading machine carry out high-speed stirring (the high-speed kneading machine to stir the slurry rotating speed be 90 rev/mins; Temperature during kneading is controlled to be 20～30 ℃; The kneading time is 10min); C, the raw material that stirs is directly entered the twin screw grain-making machine extrude and make material (each section of twin screw grain-making machine Heating temperature by heating hop count divide equally from 90-125 ℃); D, extrude the finished product of making material and will shield material after through oven dry and send into DCP spray column (temperature of DCP spray column is 40 ℃), carry out the infiltration of DCP and process, use again aluminum-plastic packagedly, then put in storage.
Embodiment 2
Non-EVA base material 35KV cable cross-linking type semiconduction inner shield material, in 100 kilograms of ethene terpolymer resins, 35 kilograms of dioctyl phthalate (DOP)s, 7.5 kilograms of white oils (the positive isoparaffin of C16～C31), 0.2 kilogram in Hinered phenols dihydroxyphenyl propane oxidation inhibitor, 0.3 kilogram of polyethylene wax, 0.5 kilogram of highly-efficient lubricant G60,25 kilograms of graphitized carbon black 40B2,7 kilograms of graphitized carbon black 350G, 2.0 kilograms of crosslink agent DCPs.
The preparation method is: a, with 35 kilograms of dioctyl phthalate (DOP)s, 25 kilograms of graphitized carbon black 40B2, graphitized carbon black 350G7 kilogram, 0.2 kilogram in oxidation inhibitor, insert in the low speed kneader and stir (the low speed kneader to stir the slurry rotating speed be 50 rev/mins; Temperature during kneading is controlled to be 20～30 ℃; The kneading time is 5min), be prepared into the powder with certain granules shape; B, with 100 kilograms of the particulate state powder that stirs and ethene terpolymer resins, 7.5 kilograms of the positive isoparaffins of C16～C31,0.3 kilogram of polyethylene wax, 0.5 kilogram of highly-efficient lubricant G60 insert heating in the high-speed kneading machine carry out high-speed stirring (the high-speed kneading machine to stir the slurry rotating speed be 90 rev/mins; Temperature during kneading is controlled to be 20～30 ℃; The kneading time is 10min); C, the raw material that stirs is directly entered the twin screw grain-making machine extrude and make material (each section of twin screw grain-making machine Heating temperature by heating hop count divide equally from 90-125 ℃); D, extrude the finished product of making material and will shield material after through oven dry and send into DCP spray column (temperature of DCP spray column is 40 ℃), carry out the infiltration of DCP and process, use again aluminum-plastic packagedly, then put in storage.
Embodiment 3
Non-EVA base material 35KV cable cross-linking type semiconduction inner shield material, in 100 kilograms of ethene terpolymer resins, 30 kilograms of dioctyl phthalate (DOP)s, 5 kilograms of white oils (the positive isoparaffin of C16～C31), 0.1 kilogram in Hinered phenols dihydroxyphenyl propane oxidation inhibitor, 0.2 kilogram of polyethylene wax, highly-efficient lubricant G600.7 kilogram, 20 kilograms of graphitized carbon black 40B2,5 kilograms of graphitized carbon black 350G, 2.5 kilograms of crosslink agent DCPs.
The preparation method is: a, with 30 kilograms of dioctyl phthalate (DOP)s, 20 kilograms of graphitized carbon black 40B2, graphitized carbon black 350G5 kilogram, 0.1 kilogram in oxidation inhibitor, insert in the low speed kneader and stir (the low speed kneader to stir the slurry rotating speed be 40 rev/mins; Temperature during kneading is controlled to be 20～30 ℃; The kneading time is 10min), be prepared into the powder with certain granules shape; B, with 100 kilograms of the particulate state powder that stirs and ethene terpolymer resins, 5 kilograms of the positive isoparaffins of C16～C31,0.2 kilogram of polyethylene wax, highly-efficient lubricant G600.7 kilogram insert in the high-speed kneading machine heating carry out high-speed stirring (the high-speed kneading machine to stir the slurry rotating speed be 100 rev/mins; Temperature during kneading is controlled to be 20～30 ℃; The kneading time is 10min); C, the raw material that stirs is directly entered the twin screw grain-making machine extrude and make material (each section of twin screw grain-making machine Heating temperature by heating hop count divide equally from 90-125 ℃); D, extrude the finished product of making material and will shield material after through oven dry and send into DCP spray column (temperature of DCP spray column is 40 ℃), carry out the infiltration of DCP and process, use again aluminum-plastic packagedly, then put in storage.
Embodiment 4
Non-EVA base material 35KV cable cross-linking type semiconduction inner shield material, in 100 kilograms of ethene terpolymer resins, 36 kilograms of dioctyl phthalate (DOP)s, 10 kilograms of white oils (the positive isoparaffin of C16～C31), 0.15 kilogram in Hinered phenols dihydroxyphenyl propane oxidation inhibitor, 0.4 kilogram of polyethylene wax, highly-efficient lubricant G601 kilogram, 20 kilograms of graphitized carbon black 40B2,8 kilograms of graphitized carbon black 350G, 1.0 kilograms of crosslink agent DCPs.
The preparation method is: a, with 36 kilograms of dioctyl phthalate (DOP)s, 20 kilograms of graphitized carbon black 40B2, graphitized carbon black 350G8 kilogram, 0.15 kilogram in oxidation inhibitor, insert in the low speed kneader and stir (the low speed kneader to stir the slurry rotating speed be 50 rev/mins; Temperature during kneading is controlled to be 20～30 ℃; The kneading time is 10min), be prepared into the powder with certain granules shape; B, with 100 kilograms of the particulate state powder that stirs and ethene terpolymer resins, 10 kilograms of the positive isoparaffins of C16～C31,0.4 kilogram of polyethylene wax, 1 kilogram of highly-efficient lubricant G60 insert heating in the high-speed kneading machine carry out high-speed stirring (the high-speed kneading machine to stir the slurry rotating speed be 120 rev/mins; Temperature during kneading is controlled to be 20～30 ℃; The kneading time is 5min); C, the raw material that stirs is directly entered the twin screw grain-making machine extrude and make material (each section of twin screw grain-making machine Heating temperature by heating hop count divide equally from 90-125 ℃); D, extrude the finished product of making material and will shield material after through oven dry and send into DCP spray column (temperature of DCP spray column is 40 ℃), carry out the infiltration of DCP and process, use again aluminum-plastic packagedly, then put in storage.
The non-EVA base material 35KV cable of embodiment 1-4 is as shown in table 1 below with the leading indicator of cross-linking type semiconduction inner shield material.
Table 1
As can be seen from Table 1, the non-EVA base material 35KV cable of embodiment 1-4 gained meets the performance requriements of expecting about shielding in the JB/T 10738-2007 standard code with cross-linking type semiconduction inner shield material, and processing characteristics is good; And have very good conductivity, volume specific resistance is lower, extrudes cable surface better, possesses environmental-protecting performance, meets the ROHS standard; Along with the minimizing of graphitized carbon black amount, the volume specific resistance when 20 ℃ and 90 ℃ all rises thereupon, but within the indication range.
Embodiment 5
Non-EVA base material 35KV cable cross-linking type semiconduction external shield material, in 100 kilograms of ethene terpolymer resins, 30 kilograms of dioctyl phthalate (DOP)s, 5 kilograms of white oils (the positive isoparaffin of C16～C31), 0.1 kilogram in Hinered phenols dihydroxyphenyl propane oxidation inhibitor, 0.2 kilogram of polyethylene wax, 0.7 kilogram of highly-efficient lubricant G60,10 kilograms of graphitized carbon black 40B2,5 kilograms of graphitized carbon black 350G, 6 kilograms of paracrils, 1.5 kilograms of crosslink agent DCPs.
The preparation method is: a, with 30 kilograms of dioctyl phthalate (DOP)s, 10 kilograms of graphitized carbon black 40B2, graphitized carbon black 350G7 kilogram, 0.2 kilogram in oxidation inhibitor, insert in the low speed kneader and stir (the low speed kneader to stir the slurry rotating speed be 50 rev/mins; Temperature during kneading is 20～30 ℃; The kneading time is 5min), be prepared into the powder with certain granules shape; B, with 100 kilograms of the particulate state powder that stirs and ethene terpolymer resins, 5 kilograms of the positive isoparaffins of C16～C31,0.2 kilogram of polyethylene wax, 0.7 kilogram of highly-efficient lubricant G60,6 kilograms of paracrils insert heating in the high-speed kneading machine carry out high-speed stirring (the high-speed kneading machine to stir the slurry rotating speed be 90 rev/mins; Temperature during kneading is 20～30 ℃; The kneading time is 10min); C, the raw material that stirs is directly entered the twin screw grain-making machine extrude and make material (each section of twin screw grain-making machine Heating temperature by heating hop count divide equally from 90-125 ℃); D, extrude the finished product of making material and will shield material after through oven dry and send into DCP spray column (temperature of DCP spray column is 40 ℃), carry out the infiltration of DCP and process, use again aluminum-plastic packagedly, then put in storage.
Embodiment 6
Non-EVA base material 35KV cable cross-linking type semiconduction external shield material, in 100 kilograms of ethene terpolymer resins, 36 kilograms of dioctyl phthalate (DOP)s, 10 kilograms of white oils (the positive isoparaffin of C16～C31), 0.15 kilogram in Hinered phenols dihydroxyphenyl propane oxidation inhibitor, 0.4 kilogram of polyethylene wax, 1 kilogram of highly-efficient lubricant G60,20 kilograms of graphitized carbon black 40B2,9 kilograms of graphitized carbon black 350G, 9 kilograms of paracrils, 2.0 kilograms of crosslink agent DCPs.
The preparation method is: a, with 36 kilograms of dioctyl phthalate (DOP)s, 20 kilograms of graphitized carbon black 40B2, graphitized carbon black 350G9 kilogram, 0.15 kilogram in oxidation inhibitor, insert in the low speed kneader and stir (the low speed kneader to stir the slurry rotating speed be 50 rev/mins; Temperature during kneading is 20～30 ℃; The kneading time is 5min), be prepared into the powder with certain granules shape; B, with 100 kilograms of the particulate state powder that stirs and ethene terpolymer resins, 10 kilograms of the positive isoparaffins of C16～C31,0.4 kilogram of polyethylene wax, highly-efficient lubricant G601 kilogram, 9 kilograms of paracrils insert heating in the high-speed kneading machine carry out high-speed stirring (the high-speed kneading machine to stir the slurry rotating speed be 90 rev/mins; Temperature during kneading is 20～30 ℃; The kneading time is 10min); C, the raw material that stirs is directly entered the twin screw grain-making machine extrude and make material (each section of twin screw grain-making machine Heating temperature by heating hop count divide equally from 90-125 ℃); D, extrude the finished product of making material and will shield material after through oven dry and send into DCP spray column (temperature of DCP spray column is 40 ℃), carry out the infiltration of DCP and process, use again aluminum-plastic packagedly, then put in storage.
Embodiment 7
Non-EVA base material 35KV cable cross-linking type semiconduction external shield material, in 100 kilograms of ethene terpolymer resins, 40 kilograms of dioctyl phthalate (DOP)s, 8 kilograms of white oils (the positive isoparaffin of C16～C31), 0.2 kilogram in Hinered phenols dihydroxyphenyl propane oxidation inhibitor, 0.3 kilogram of polyethylene wax, 0.5 kilogram of highly-efficient lubricant G60,24 kilograms of graphitized carbon black 40B2,10 kilograms of graphitized carbon black 350G, 6 kilograms of paracrils, 2.5 kilograms of crosslink agent DCPs.
The preparation method is: a, with 40 kilograms of dioctyl phthalate (DOP)s, 24 kilograms of graphitized carbon black 40B2, graphitized carbon black 350G10 kilogram, 0.2 kilogram in oxidation inhibitor, insert in the low speed kneader and stir (the low speed kneader to stir the slurry rotating speed be 40 rev/mins; Temperature during kneading is 20～30 ℃; The kneading time is 10min), be prepared into the powder with certain granules shape; B, with 100 kilograms of the particulate state powder that stirs and ethene terpolymer resins, 8 kilograms of the positive isoparaffins of C16～C31,0.3 kilogram of polyethylene wax, 0.5 kilogram of highly-efficient lubricant G60,6 kilograms of paracrils insert heating in the high-speed kneading machine carry out high-speed stirring (the high-speed kneading machine to stir the slurry rotating speed be 100 rev/mins; Temperature during kneading is 20～30 ℃; The kneading time is 10min); C, the raw material that stirs is directly entered the twin screw grain-making machine extrude and make material (each section of twin screw grain-making machine Heating temperature by heating hop count divide equally from 90-125 ℃); D, extrude the finished product of making material and will shield material after through oven dry and send into DCP spray column (temperature of DCP spray column is 40 ℃), carry out the infiltration of DCP and process, use again aluminum-plastic packagedly, then put in storage.
Embodiment 8
Non-EVA base material 35KV cable cross-linking type semiconduction external shield material, in 100 kilograms of ethene terpolymer resins, 35 kilograms of dioctyl phthalate (DOP)s, 7.5 kilograms of white oils (the positive isoparaffin of C16～C31), 0.2 kilogram in Hinered phenols dihydroxyphenyl propane oxidation inhibitor, 0.3 kilogram of polyethylene wax, 0.5 kilogram of highly-efficient lubricant G60,25 kilograms of graphitized carbon black 40B2,7 kilograms of graphitized carbon black 350G, 9 kilograms of paracrils, 1.0 kilograms of crosslink agent DCPs.
The preparation method is: a, with 35 kilograms of dioctyl phthalate (DOP)s, 25 kilograms of graphitized carbon black 40B2, graphitized carbon black 350G7 kilogram, 0.2 kilogram in oxidation inhibitor, insert in the low speed kneader and stir (the low speed kneader to stir the slurry rotating speed be 50 rev/mins; Temperature during kneading is 20～30 ℃; The kneading time is 8min), be prepared into the powder with certain granules shape; B, with 100 kilograms of the particulate state powder that stirs and ethene terpolymer resins, 7.5 kilograms of the positive isoparaffins of C16～C31,0.3 kilogram of polyethylene wax, 0.5 kilogram of highly-efficient lubricant G60,9 kilograms of paracrils insert heating in the high-speed kneading machine carry out high-speed stirring (the high-speed kneading machine to stir the slurry rotating speed be 120 rev/mins; Temperature during kneading is 20～30 ℃; The kneading time is 5min); C, the raw material that stirs is directly entered the twin screw grain-making machine extrude and make material (each section of twin screw grain-making machine Heating temperature by heating hop count divide equally from 90-125 ℃); D, extrude the finished product of making material and will shield material after through oven dry and send into DCP spray column (temperature of DCP spray column is 40 ℃), carry out the infiltration of DCP and process, use again aluminum-plastic packagedly, then put in storage.
The non-EVA base material 35KV cable of embodiment 5-8 is as shown in table 2 below with the leading indicator of cross-linking type semiconduction external shield material.
Table 2
As can be seen from Table 2, non-EVA base material 35KV cable of the present invention meets the performance requriements of expecting about shielding in the JB/T10738-2007 standard code with cross-linking type semiconduction external shield material, and processing characteristics is good; Have very good conductivity, volume specific resistance is lower, extrudes cable surface better; Possess environmental-protecting performance, meet the ROHS standard, guarantee that simultaneously the product conductivity is stable; When the add-on of Powdered acrylonitrile-butadiene rubber reached 6～9 parts, stripping strength all obviously reduced, and is conducive to the use of product.
Claims (10)
1. a 35KV cable is with non-EVA base material cross-linking type semiconduction inner shield material, and its raw material comprises the component of following parts by weight:
Ethene terpolymer resin 100 weight parts;
Softening agent a 30-40 weight part;
Softening agent b 5-10 weight part;
Oxidation inhibitor 0.1-0.5 weight part;
Polyethylene wax 0.2-0.4 weight part;
Highly-efficient lubricant 0.5-1 weight part;
Graphitized carbon black a 10-30 weight part;
Graphitized carbon black b 5-10 weight part;
Linking agent 1-2.5 weight part.
2. 35KV cable as claimed in claim 1 is characterized in that with non-EVA base material cross-linking type semiconduction inner shield material, and described ethene terpolymer resin is ethylene-propylene acid butyl ester-carbonyl multipolymer.
3. 35KV cable as claimed in claim 1 is characterized in that with non-EVA base material cross-linking type semiconduction inner shield material, and described softening agent a is dioctyl phthalate (DOP); Described softening agent b is selected from white oil, and its main component is the mixture of the positive isoparaffin of C16～C31.
4. 35KV cable as claimed in claim 1 is characterized in that with non-EVA base material cross-linking type semiconduction inner shield material, and described oxidation inhibitor is the Hinered phenols dihydroxyphenyl propane.
5. 35KV cable as claimed in claim 1 is characterized in that with non-EVA base material cross-linking type semiconduction inner shield material, and described highly-efficient lubricant is the G60 lubricant, and its main component is sebacic acid oleyl alcohol ester.
6. 35KV cable as claimed in claim 1 is characterized in that with non-EVA base material cross-linking type semiconduction inner shield material, and described linking agent is dicumyl peroxide DCP.
7. 35KV cable as claimed in claim 1 is characterized in that with non-EVA base material cross-linking type semiconduction inner shield material, and described graphitized carbon black a is the 40B2 graphitized carbon black; Described graphitized carbon black b is superconductive carbon black 350G.
8. such as the preparation method of the arbitrary described 35KV cable of claim 1-7 with non-EVA base material cross-linking type semiconduction inner shield material, comprise the steps:
1) inserts in the low speed kneader after softening agent a, graphitized carbon black a, graphitized carbon black b and oxidation inhibitor are mixed according to proportioning and stir, be prepared into the particulate state powder;
2) the particulate state powder that stirs and ethene terpolymer resin, softening agent b, polyethylene wax and highly-efficient lubricant are inserted in the high-speed kneading machine heating according to proportioning and carry out high-speed stirring;
3) mixing raw material that stirs is directly entered to extrude in the twin screw grain-making machine make material;
4) extrude the finished product of making material and send in the DCP spray column, carry out DCP and infiltrate processing;
5) after the finished product after the complete granulation of DCP absorbs, the blanking packing.
9. preparation method as claimed in claim 8 is characterized in that step 1) in, described low speed kneader stir the slurry rotating speed be 40-50 rev/min; Mediating temperature is 20～30 ℃; The kneading time is 5-10min; Step 2) in, described high-speed kneading machine stir the slurry rotating speed be 90-120 rev/min; Mediating temperature is 20～30 ℃; The kneading time is 5-10min.
10. preparation method as claimed in claim 8 is characterized in that step 3) in, each section Heating temperature of described twin screw grain-making machine is divided equally from 90-125 ℃ according to the heating hop count; Step 4) in, the temperature of described DCP spray column is 40 ℃.
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| CN104361927A (en) * | 2014-11-25 | 2015-02-18 | 四川明星电缆股份有限公司 | Flexible rubber jacketed cable for shield tunneling machine |
| CN104900334A (en) * | 2015-05-08 | 2015-09-09 | 大连联合高分子材料有限公司 | 10-35kv insulating tubular bus and manufacturing method thereof |
| CN105038057A (en) * | 2015-06-18 | 2015-11-11 | 天津市安正电力高分子材料有限公司 | Ultra-smooth high-voltage semi-conductive external shielding material and preparation method thereof |
| CN105038058A (en) * | 2015-06-18 | 2015-11-11 | 天津市安正电力高分子材料有限公司 | Ultra-smooth high-voltage semi-conductive external shielding material and preparation method thereof |
| CN114805999A (en) * | 2022-05-13 | 2022-07-29 | 欧宝聚合物江苏有限公司 | Cable material capable of being immersed in fluorinated cooling liquid and preparation method thereof |
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| CN101942142A (en) * | 2010-08-16 | 2011-01-12 | 江阴市海江高分子材料有限公司 | Preparation method of semiconductive shielding material for 110kV and above voltage class cables |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104361927A (en) * | 2014-11-25 | 2015-02-18 | 四川明星电缆股份有限公司 | Flexible rubber jacketed cable for shield tunneling machine |
| CN104900334A (en) * | 2015-05-08 | 2015-09-09 | 大连联合高分子材料有限公司 | 10-35kv insulating tubular bus and manufacturing method thereof |
| CN105038057A (en) * | 2015-06-18 | 2015-11-11 | 天津市安正电力高分子材料有限公司 | Ultra-smooth high-voltage semi-conductive external shielding material and preparation method thereof |
| CN105038058A (en) * | 2015-06-18 | 2015-11-11 | 天津市安正电力高分子材料有限公司 | Ultra-smooth high-voltage semi-conductive external shielding material and preparation method thereof |
| CN114805999A (en) * | 2022-05-13 | 2022-07-29 | 欧宝聚合物江苏有限公司 | Cable material capable of being immersed in fluorinated cooling liquid and preparation method thereof |
| CN114805999B (en) * | 2022-05-13 | 2023-09-19 | 欧宝聚合物江苏有限公司 | Cable material capable of being immersed in fluorinated coolant and preparation method thereof |
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| CN102898717B (en) | 2015-04-15 |
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