CN111326441A - Substrate processing apparatus and method - Google Patents
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- 238000012545 processing Methods 0.000 title claims abstract description 160
- 239000000758 substrate Substances 0.000 title claims abstract description 100
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000007788 liquid Substances 0.000 claims abstract description 97
- 238000004140 cleaning Methods 0.000 claims abstract description 86
- 238000003672 processing method Methods 0.000 claims abstract description 16
- 238000012360 testing method Methods 0.000 claims description 49
- 239000012530 fluid Substances 0.000 claims description 28
- 238000003860 storage Methods 0.000 abstract description 68
- 235000012431 wafers Nutrition 0.000 description 5
- 238000005530 etching Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010981 drying operation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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Abstract
一种基板处理设备,包含处理装置、供应装置、清洁装置与控制装置。所述控制装置受组配为可在第一参数达到第一条件时,指示所述供应装置的一切换元件从第一组态切换成第二组态以变更用于供应处理液的储槽。所述控制装置进一步受组配为可在第二参数达到第二条件时,指示所述清洁装置将清洗液提供至所述处理装置内以供用于清洁所述处理装置。本发明还提供一种基板处理方法。利用本发明的基板处理设备及方法能够节省相关人力资源,提高作业效率。
A substrate processing device comprises a processing device, a supply device, a cleaning device and a control device. The control device is configured to instruct a switching element of the supply device to switch from a first configuration to a second configuration to change a storage tank for supplying a processing liquid when a first parameter reaches a first condition. The control device is further configured to instruct the cleaning device to provide a cleaning liquid to the processing device for cleaning the processing device when a second parameter reaches a second condition. The present invention also provides a substrate processing method. The use of the substrate processing device and method of the present invention can save relevant human resources and improve work efficiency.
Description
技术领域technical field
本发明涉及一种半导体装置制程,特别是涉及一种使用处理液处理基板的技术。The present invention relates to a semiconductor device manufacturing process, in particular to a technology for treating a substrate with a treatment liquid.
背景技术Background technique
半导体装置的制程可能会使用处理液来处理基板。例如,湿式蚀刻作业可能会使用酸液来作为蚀刻剂,借以在基板上创造出特定图样。处理液一般储放在供液装置的储槽中,并依需要被输送到基板上。为了维持制程的稳定与正确性,供液装置的储槽每隔一段时间必须以人工方式进行更换,且处理设施每隔一段时间也必须以人工方式进行清洗。然而,这样的人工作业不但相当耗时,有时甚至会因为人为因素而发生错误。Processes for semiconductor devices may use processing fluids to treat substrates. For example, wet etching operations may use acid as an etchant to create specific patterns on a substrate. The processing liquid is generally stored in the storage tank of the liquid supply device, and is delivered to the substrate as needed. In order to maintain the stability and accuracy of the process, the storage tank of the liquid supply device must be manually replaced at regular intervals, and the processing facility must also be manually cleaned at regular intervals. However, such manual work is not only time-consuming, but sometimes even error-prone due to human factors.
发明内容SUMMARY OF THE INVENTION
本发明的目的在于提供一种可避免现有技术的至少一种上述缺点的基板处理设备及方法。An object of the present invention is to provide a substrate processing apparatus and method that can avoid at least one of the above-mentioned disadvantages of the prior art.
本发明在一些实施态样中,所述基板处理设备包含处理装置,此处理装置具有腔室,并被组配为可在所述腔室中容置基板。所述基板处理设备尚包含供应装置,此供应装置具有一切换元件及用于储放处理液的数个储槽,且被组配为可提供处理液至所述处理装置内以供用于处理基板,其中,所述切换元件可受操作来容许所述储槽中的一者提供处理液给所述处理装置。所述基板处理设备也包含清洁装置,此清洁装置被组配为可提供清洗液至所述处理装置内以供用于清洁所述处理装置。所述基板处理设备另包含控制装置,此控制装置被组配为可在与处理液的耗用有关的第一参数达到第一条件时,指示所述切换元件从第一组态切换成第二组态,其中,所述第一组态容许由所述多个储槽中的第一储槽提供处理液给所述处理装置,且所述第二组态容许由所述多个储槽中的第二储槽提供处理液给所述处理装置。所述控制装置也被组配为可在与所述切换元件的作业有关的第二参数达到第二条件时,指示所述清洁装置将清洗液提供至所述处理装置内。In some embodiments of the present invention, the substrate processing apparatus includes a processing apparatus having a chamber configured to receive a substrate in the chamber. The substrate processing equipment further includes a supply device, the supply device has a switching element and a plurality of storage tanks for storing the processing liquid, and is configured to provide the processing liquid into the processing device for processing the substrate. , wherein the switching element is operable to allow one of the reservoirs to provide treatment fluid to the treatment device. The substrate processing apparatus also includes a cleaning device configured to provide a cleaning solution into the processing device for cleaning the processing device. The substrate processing apparatus further includes a control device configured to instruct the switching element to switch from a first configuration to a second configuration when a first parameter related to the consumption of the processing liquid reaches a first condition a configuration wherein the first configuration allows treatment fluid to be provided to the treatment device from a first reservoir of the plurality of reservoirs, and the second configuration allows treatment fluid to be supplied from the plurality of reservoirs The second storage tank provides treatment liquid to the treatment device. The control device is also configured to instruct the cleaning device to supply cleaning fluid into the processing device when a second parameter related to the operation of the switching element reaches a second condition.
在一些实施态样中,所述第一参数为下列其中一者:自从所述切换元件上次被切换成所述第一组态之后在所述处理装置中受到处理的基板数量、自从所述切换元件上次被切换成所述第一组态之后所经历的时间、自从所述切换元件上次被切换成所述第一组态之后被从所述第一储槽提供给所述处理装置的处理液总量、自从所述切换元件上次被切换成所述第一组态之后所述第一储槽每次提供所述处理液给所述处理装置的时间的总和、及前述项目的任意组合;并且所述第一条件为至少一个预定阈值。In some implementation aspects, the first parameter is one of the following: the number of substrates processed in the processing device since the switching element was last switched to the first configuration, the number of substrates processed in the processing device since the switching element was last switched to the first configuration The time elapsed since the last time the switching element was switched to the first configuration, provided from the first reservoir to the processing device since the last time the switching element was switched to the first configuration The total amount of the treatment liquid, the sum of the time each time the first storage tank provides the treatment liquid to the treatment device since the switching element was last switched to the first configuration, and the above items any combination; and the first condition is at least one predetermined threshold.
在一些实施态样中,所述第一参数为时间,且所述第一条件为预定时点。In some implementation aspects, the first parameter is time, and the first condition is a predetermined point in time.
在一些实施态样中,所述第二参数为所述切换元件所进行过的切换次数,且所述第二条件为一预定阈值。In some implementation aspects, the second parameter is the number of times of switching performed by the switching element, and the second condition is a predetermined threshold.
在一些实施态样中,所述清洁装置进一步被组配为可提供所述清洗液至所述数个储槽内以供用于清洁所述储槽,并且所述控制装置进一步被组配为可在所述切换元件从容许由所述第一储槽提供所述处理液给所述处理装置的所述第一组态切换成容许由所述第二储槽提供所述处理液给所述处理装置的所述第二组态之后,指示所述清洁装置以与所述清洁装置将所述清洗液提供至所述处理装置内的作业并行的方式将所述清洗液提供至所述第一储槽内。In some embodiments, the cleaning device is further configured to provide the cleaning fluid into the plurality of reservoirs for cleaning the reservoirs, and the control device is further configured to after the switching element is switched from the first configuration allowing the treatment fluid to be supplied to the treatment device from the first reservoir to allowing the treatment fluid to be supplied to the treatment from the second reservoir After the second configuration of the device, the cleaning device is instructed to provide the cleaning solution to the first reservoir in parallel with the cleaning device providing the cleaning solution to the processing device. in the slot.
在一些实施态样中,所述控制装置进一步被组配为可在所述切换元件被切换成所述第二组态之后进行下列作业:根据与测试作业有关的第三参数而决定是否要进行所述测试作业;在决定要进行所述测试作业之后,指示所述处理装置与所述供应装置进行所述测试作业,并在所述测试作业完成之后对至少一个基板进行排程以使所述至少一个基板在所述处理装置的腔室中受到处理,其中,所述测试作业会使测试基板在所述处理装置的腔室中受到处理;以及在决定不进行所述测试作业之后,指示所述处理装置对所述至少一个基板进行排程以使所述至少一个基板在所述处理装置的腔室中受到处理。In some implementation aspects, the control device is further configured to perform the following operation after the switching element is switched to the second configuration: determining whether to perform the test operation according to a third parameter related to the test operation the test operation; after it is determined that the test operation is to be performed, instruct the processing device and the supply device to perform the test operation, and after the test operation is completed, at least one substrate is scheduled so that the at least one substrate is processed in a chamber of the processing device, wherein the test operation causes a test substrate to be processed in the chamber of the processing device; and after a decision not to perform the test operation, instructing all The processing device schedules the at least one substrate to be processed in a chamber of the processing device.
本发明在一些实施态样中,所述基板处理方法包含下列步骤:对至少一个基板进行排程以使所述至少一个基板在处理装置的腔室中受到处理;在与处理液的耗用有关的第一参数达到第一条件时,指示能够将处理液提供至所述处理装置内以供用于处理所述至少一个基板的供应装置的切换元件从第一组态切换成第二组态,其中,所述第一组态容许处理液被从所述供应装置的第一储槽提供给所述处理装置,且所述第二组态容许处理液被从所述供应装置的第二储槽提供给所述处理装置;以及在与所述切换元件的作业有关的第二参数达到第二条件时,指示清洁装置将清洗液提供至所述处理装置内以供用于清洁所述处理装置。In some aspects of the present invention, the substrate processing method includes the steps of: scheduling at least one substrate to be processed in a chamber of a processing apparatus; When the first parameter of the reaches a first condition, it indicates that the switching element of the supply device capable of supplying the processing liquid into the processing device for processing the at least one substrate is switched from the first configuration to the second configuration, wherein , the first configuration allows treatment fluid to be supplied to the treatment device from a first reservoir of the supply, and the second configuration allows treatment fluid to be supplied from a second reservoir of the supply to the treatment device; and instructing the cleaning device to provide cleaning fluid into the treatment device for use in cleaning the treatment device when a second parameter related to the operation of the switching element reaches a second condition.
在一些实施态样中,所述第一参数为下列其中一者:自从所述切换元件上次被切换成所述第一组态之后在所述处理装置中受到处理的基板数量、自从所述切换元件上次被切换成所述第一组态之后所经历的时间、自从所述切换元件上次被切换成所述第一组态之后被从所述第一储槽提供给所述处理装置的处理液总量、自从所述切换元件上次被切换成所述第一组态之后所述第一储槽每次提供所述处理液给所述处理装置的时间的总和、及前述项目的任意组合;并且所述第一条件为至少一个预定阈值。In some implementation aspects, the first parameter is one of the following: the number of substrates processed in the processing device since the switching element was last switched to the first configuration, the number of substrates processed in the processing device since the switching element was last switched to the first configuration The time elapsed since the last time the switching element was switched to the first configuration, provided from the first reservoir to the processing device since the last time the switching element was switched to the first configuration The total amount of the treatment liquid, the sum of the time each time the first storage tank provides the treatment liquid to the treatment device since the switching element was last switched to the first configuration, and the above items any combination; and the first condition is at least one predetermined threshold.
在一些实施态样中,所述第一参数为时间,且所述第一条件为预定时点。In some implementation aspects, the first parameter is time, and the first condition is a predetermined point in time.
在一些实施态样中,所述第二参数为所述切换元件所进行过的切换次数,且所述第二条件为预定阈值。In some implementation aspects, the second parameter is the number of switching times performed by the switching element, and the second condition is a predetermined threshold.
在一些实施态样中,所述基板处理方法进一步包含:在所述切换元件从容许所述处理液被从所述供应装置的第一储槽提供给所述处理装置的所述第一组态切换成容许所述处理液被从所述供应装置的第二储槽提供给所述处理装置的所述第二组态之后,指示所述清洁装置以与所述清洁装置将所述清洗液提供至所述处理装置内的作业并行的方式将所述清洗液提供至所述第一储槽内以供用于清洁所述第一储槽。In some implementation aspects, the substrate processing method further comprises: switching the element from the first configuration that allows the processing liquid to be supplied to the processing device from a first reservoir of the supply device After switching to the second configuration that allows the treatment fluid to be provided to the treatment device from a second reservoir of the supply device, instructing the cleaning device to provide the cleaning solution with the cleaning device The cleaning fluid is provided into the first tank for cleaning the first tank in a parallel manner to operations into the processing device.
在一些实施态样中,所述基板处理方法进一步包含:在所述切换元件从容许所述处理液被从所述供应装置的第一储槽提供给所述处理装置的所述第一组态切换成容许所述处理液被从所述供应装置的第二储槽提供给所述处理装置的所述第二组态之后,指示所述清洁装置以与由所述第二储槽提供所述处理液至所述处理装置的腔室内以供用于处理所述至少一个基板中的至少一个基板的作业并行的方式将所述清洗液提供至所述第一储槽内以供用于清洁所述第一储槽。In some implementation aspects, the substrate processing method further comprises: switching the element from the first configuration that allows the processing liquid to be supplied to the processing device from a first reservoir of the supply device After switching to the second configuration that allows the treatment fluid to be provided to the treatment device from a second reservoir of the supply device, instructing the cleaning device to cooperate with the supply of the treatment fluid from the second reservoir Processing liquid into the chamber of the processing apparatus provides the cleaning liquid into the first reservoir for cleaning the first tank in parallel with operations for processing at least one of the at least one substrates a storage tank.
在一些实施态样中,所述基板处理方法进一步包含:在所述切换元件被切换成所述第二组态之后,根据与一测试作业有关的第三参数而决定是否要进行所述测试作业;在已决定要进行所述测试作业时,指示所述处理装置与所述供应装置进行所述测试作业,并在所述测试作业完成之后对另外至少一个基板进行排程以使所述另外至少一个基板在所述处理装置的腔室中受到处理,其中,所述测试作业会使一试基板在所述处理装置的腔室中受到处理;以及在已决定不进行所述测试作业时,对另外至少一个基板进行排程以使所述另外至少一个基板在所述处理装置的腔室中受到处理。In some implementation aspects, the substrate processing method further includes: after the switching element is switched to the second configuration, determining whether to perform the test operation according to a third parameter related to a test operation ; when it has been decided to perform the test operation, instruct the processing device and the supply device to perform the test operation, and after the test operation is completed, schedule another at least one substrate so that the other at least one A substrate is processed in the chamber of the processing device, wherein the test operation causes a test substrate to be processed in the chamber of the processing device; and when it has been decided not to perform the test operation, Another at least one substrate is scheduled to be processed in a chamber of the processing apparatus.
在一些实施态样中,所述基板处理方法进一步包含:在已决定要进行所述测试作业时,指示所述清洁装置在所述切换元件从容许所述处理液被从所述供应装置的第一储槽提供给所述处理装置的所述第一组态切换成容许所述处理液被从所述供应装置的第二储槽提供给所述处理装置的所述第二组态之后,以与所述测试作业并行的方式将所述清洗液提供至所述第一储槽内以供用于清洁所述第一储槽。In some implementations, the substrate processing method further includes: instructing the cleaning device when the test operation has been determined to be performed, instructing the cleaning device to stop the switching element from a first step that allows the processing liquid to be removed from the supply device. After the first configuration in which a reservoir is supplied to the treatment device is switched to the second configuration which allows the treatment fluid to be supplied to the treatment device from a second reservoir of the supply device, to The cleaning fluid is provided into the first sump for use in cleaning the first sump in parallel with the test operation.
本发明的有益效果在于:可以节省相关人力资源,并可避免由于人为因素所造成的失误。此外,这样的自动化程序比起传统的人工程序在时间的运用上也较有效率。The beneficial effects of the present invention are: related human resources can be saved, and errors caused by human factors can be avoided. In addition, such automated procedures are more efficient in the use of time than traditional manual procedures.
附图说明Description of drawings
图1是依据本发明的实施例而例示出一种基板处理设备的示意图;FIG. 1 is a schematic diagram illustrating a substrate processing apparatus according to an embodiment of the present invention;
图2是依据本发明的实施例而例示出一种基板处理方法的流程图。2 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.
具体实施方式Detailed ways
下面结合附图及实施例对本发明进行详细说明。The present invention will be described in detail below with reference to the accompanying drawings and embodiments.
请参看图1,其依据本发明的实施例而例示出可借以进行基板湿制程(可能包含例如蚀刻、清洗、干燥作业等等)的一个基板处理设备100。所例示的此设备100包含一个处理装置110、一个供应装置120、一个清洁装置130以及电气式连接至所述处理装置110、所述供应装置120和所述清洁装置130的一个控制装置140。Please refer to FIG. 1, which illustrates a
根据一个实施例,所述处理装置110具有一个腔室,且被组配为可在所述腔室中容置即将进行处理的至少一个基板150。依据一些实施例,处理装置110对基板150所进行的处理可与单基板湿制程、多基板湿制程、单一方晶片锡球下金属蚀刻、薄化晶圆支撑或剥离、贴合或剥离制程、碳化硅再生晶圆、再生硅晶圆或其他同类技术有关。为求简明,图1中只例示出一个基板150。在一个实施例中,在所述腔室中每次只会容置并处理一个基板150,但本发明并不如此受限。根据本发明的一些实施例,基板150可为载板、晶圆、晶片或其他元件形式,并且可能具有圆形、方形、矩形或其他几何形状。According to one embodiment, the
根据一个实施例,供应装置120具有数个处理液储槽122(例如于图中所示出的包含第一储槽122-1与第二储槽122-2的两个处理液储槽,但本发明并不如此受限)和一个切换元件121,所述处理液储槽122是用于储放处理液,所述切换元件121可受操作来使所述处理液储槽122中的一者能够与处理装置110连通并提供处理液至处理装置110的腔室内。切换元件121包含连接至处理装置110的第一管线,以使供应装置120能够经由所述第一管线而将储放在处理液储槽122中的处理液提供至处理装置110内。所述切换元件121被组配成同一时间仅容许所述处理液储槽122中的唯一一者能够提供处理液给处理装置110。所述处理液会被施加至处理装置110的腔室中的基板150上,以在基板150上进行某种特定处理程序(例如蚀刻)。在一个实施例中,切换元件121进一步包含数个控制阀以及连接至所述处理液储槽122的第二管线,以使切换元件121可在所述处理液储槽122之间切换,而选择要以哪一个处理液储槽122作为处理液来源。在一个实施例中,供应装置120更进一步包含储存有补充液(即,未使用过的处理液)且经由第三管线连接至所述处理液储槽122的一个补充装置(未示于图中),以供用于对所述处理液储槽122进行补充。在又一个实施例中,供应装置120进一步包含连接至所述处理液储槽122的控温器以及循环管路,用以控制储存在所述处理液储槽122中的处理液的温度。According to one embodiment, the
根据一个实施例,清洁装置130具有用于储放清洗液的一个洗剂储槽131,并且经由第四管线而与处理装置110连接,借以使得清洁装置130能够经由所述第四管线将清洗液供应至处理装置110内以供用于清洁处理装置110。清洁装置130可另经由第五管线而与处理液储槽122连接,以使清洁装置130能够经由所述第五管线将清洗液供应至处理液储槽122内以供用于清洁处理液储槽122。According to one embodiment, the
根据一个实施例,所述控制装置140具有彼此电气式连接的一个输入模组141和一个处理器142。处理器142被组配成可透过输入模组141接收来自设备100的使用者的控制资讯,并可根据所接收到的控制资讯而自动地控制处理装置110、供应装置120与清洁装置130的作业。所述控制资讯可包含但不受限于下列中的至少一者:基板数量、时间长度、时间、已用处理液量、切换次数、测试次数。处理器142更进一步被组配成可根据所接收到的控制资讯而自动控制何时经由何处理液储槽122提供处理液。According to one embodiment, the
图2是依据本发明的实施例而例示出一种基板处理方法的流程图,此方法可借由例示于图1中的设备100来实施。以下将针对图1的设备100而说明所述方法。FIG. 2 is a flowchart illustrating a substrate processing method, which may be implemented by the
请参看图2,在接下来的叙述中,假设在即将开始进行此程序时,供应装置120的切换元件121组配成容许由第一储槽122-1提供处理液给处理装置110的第一组态(即,负责提供处理液给处理装置110的是第一储槽122-1)。Referring to FIG. 2 , in the following description, it is assumed that when the process is about to start, the
于步骤205,设备100的控制装置140对一批多个基板的其中至少一部分基板进行排程以使所述至少一部分基板在处理装置110的腔室中受到处理。根据一些实施例,所述至少一部分基板可以是所述批基板的其中一个基板、其中数个基板或者所有基板,并且当所述至少一部分基板包含数个基板时,所述基板可以是逐一受处理或者成群受处理。At
于步骤210,控制装置140判定是否要进行更换储槽作业。若答案为是,则前进到步骤215;若答案为否,则可回到步骤205对同一批基板的另一部分基板或者另一批基板的其中至少一部分基板进行排程。根据一个实施例,步骤210可借由针对在步骤205中受到排程的最末片基板而判定与处理液的耗用有关的一第一参数是否达到一第一条件,来判定是否要进行更换储槽作业。所述第一参数可例如为自从切换元件121上次被组配或切换成容许由第一储槽122-1提供处理液的第一组态之后在处理装置110中受到处理的基板数量、自从切换元件121上次被组配或切换成所述第一组态之后所经历的时间、自从切换元件121上次被组配或切换成所述第一组态之后被从第一储槽122-1提供给处理装置110的处理液总量、自从切换元件121上次被组配或切换成所述第一组态之后第一储槽122-1每次提供处理液给处理装置110的时间的总和、或前述项目的任意组合;且所述第一条件可为至少一个预定阈值,其数值可例如为根据由使用者所输入的控制资讯所设定的。根据另一个实施例,所述第一参数也可以是时间,且所述第一条件可为一个预定时点。In
于步骤215,控制装置140指示供应装置120进行更换储槽作业,并对此进行排程,以将被容许提供处理液给处理装置110的处理液储槽(即,负责提供处理液给处理装置110的处理液储槽)从第一储槽122-1更换成其他储槽,例如更换成第二储槽122-2。于此事例中,此步骤包含指示切换元件121从容许由第一储槽122-1提供处理液的第一组态切换成容许由第二储槽122-2提供处理液的第二组态。根据一个实施例,更换处理液储槽122的这个作业可以是例如借由改变针对各个处理液储槽122所设置的控制阀的组态来完成。在一个实施例中,只要在步骤205中受到排程的所有基板皆已处理完毕,之后便可着手进行更换储槽作业。然而,在另一个实施例中,更换储槽作业只会在一整批基板皆已处理完毕之后进行,因此,于此实施例中,若于步骤205中受到排程的所述批基板还有尚未受到处理者,则于步骤215,控制装置140会在排程更换储槽作业之前先对所述批基板中的所有尚未受到处理的基板进行排程,以使所述尚未受到处理的基板在进行更换储槽作业之前都先在处理装置110中受到处理。In
在此叙明,受到使用和更换的处理液储槽122并不限于前文所述者。例如,在进行前述程序时,第一储槽122-1和第二储槽122-2的身份可互换;换句话说,在进行前述程序时,在进行更换储槽作业前有可能原本是由第二储槽122-2负责提供处理液给处理装置110,且所进行的更换储槽作业可能是将负责供应处理液的储槽从第二储槽122-2更换成第一储槽122-1。It is stated here that the treatment
于步骤220,控制装置140判定是否要进行清洗腔室作业。若答案为是,则前进到步骤225;若答案为否,则前进到步骤230。根据一些实施例,可借由判定与切换元件121的作业有关的一第二参数是否达到第二条件,来判定是否要进行清洗腔室作业。所述第二参数可例如为切换元件121所进行过的切换次数,且所述第二条件可以是一个预定阈值,其数值可例如为根据由使用者所输入的控制资讯所设定的。In
于步骤225,控制装置140指示清洁装置130和处理装置110进行清洗腔室作业,并对此进行排程。此步骤包含指示清洁装置130将清洗液提供至处理装置110内以供用于清洁处理装置110。In
于步骤230,控制装置140判定是否要进行测试作业。若答案为是,则前进到步骤235;若答案为否,则可回到步骤205对同一批基板的另一部分基板或者另一批基板的其中至少一部分基板进行排程。进行测试作业的目的是要确保处理装置110在更换了供应处理液的处理液储槽122以后仍能对基板进行正确处理。根据一些实施例,可根据与测试作业有关的一第三参数来判定是否要进行测试作业。例如,所述第三参数可以是一个旗标,且可借由判定所述第三参数是否为特定值来判定是否要进行测试作业。在一个进一步实施例中,控制装置140可设定并可更改所述第三参数的值。例如,控制装置140可预先将第三参数的值设定为指出要进行测试作业的值或指出不进行测试作业的值,并可根据例如由使用者所输入的控制资讯而更改所述第三参数的数值。在一个实施例中,所述第三参数的预设值为指出要进行测试作业的第一值,并且在切换元件121进行了特定数量次(例如五次)切换之后,控制装置140会将第三参数的值改设为指出不进行测试作业的第二值;在更进一步的实施例中,控制装置140可在切换元件121又进行了特定数量次(例如五次)切换之后或者在到达某个预定时间之时将第三参数的值改设回第一值。In
于步骤235,控制装置140指示处理装置110和供应装置120进行测试作业,并对此进行排程。在一个实施例中,在测试作业中会有专供测试用的至少一片测试基板在处理装置110的腔室内借由来自供应装置120的处理液而受到处理。例如,于此实施中,由于此时切换元件121已切换成容许由第二储槽122-2提供处理液的第二组态,所以在测试作业中会有至少一片测试基板在处理装置110的腔室内借由来自第二储槽122-2的处理液而受到处理。完成测试作业以后,可再回到步骤205对同一批基板的另一部分基板或者另一批基板的其中至少一部分基板进行排程。In
值得注意的是,在图2所例示的这个方法中,更换储槽作业、清洗腔室作业与测试作业都是由机器自动排程与执行的,如此一来,实施本方法可以节省相关人力资源,并可避免由于人为因素所造成的失误。此外,这样的自动化程序比起传统的人工程序在时间的运用上也较有效率。It is worth noting that, in the method illustrated in FIG. 2 , the operation of replacing the storage tank, the operation of cleaning the chamber and the operation of testing are all automatically scheduled and executed by the machine. In this way, the implementation of this method can save relevant human resources. , and avoid errors caused by human factors. In addition, such automated procedures are more efficient in the use of time than traditional manual procedures.
熟习本发明所属技术领域中的通常知识者可以识出,步骤215至230并不一定要依照图2所示出的顺序来执行。例如,步骤220可在步骤210与步骤225之间的任何时点进行,而不一定要夹在步骤215与步骤225之间,并且步骤230可在步骤210与步骤235之间的任何时点进行,而不一定要夹在步骤225与步骤235之间。Those skilled in the art to which the present invention pertains can recognize that
此外,所述方法也可有更多变化。例如,在一个实施例中,控制装置140可进一步在于步骤210判定出要进行更换储槽作业之后,进行判定是否要进行清洗储槽作业的一个步骤(此判定可例如为根据身为一个旗标的一第四参数是否为一特定值所作出)。于此实施例中,若判定结果为要进行清洗储槽作业,那么控制装置140便会指示清洁装置130和第一储槽122-1在完成步骤215的将被容许提供处理液给处理装置110的处理液储槽从第一储槽122-1更换成第二储槽122-2的更换储槽作业之后进行针对第一储槽122-1的清洗储槽作业,并对此进行排程。在本发明的一些实施例中,控制装置140将此清洗储槽作业排程为与其他作业并行(例如同时进行),以有效利用时间。例如,控制装置140可将由清洁装置130和第一储槽122-1所进行的清洗储槽作业排程为与由清洁装置130和处理装置110所进行的清洗腔室作业、由供应装置120和处理装置110所进行的测试作业、或者由处理装置110借由来自第二储槽122-2的处理液对一或多个基板150所作的处理作业并行,以节省时间。根据一个实施例,在所述清洗储槽作业中,第一储槽122-1会排空其内部的处理液,且清洁装置130会接着将清洗液灌注至第一储槽122-1内以供用于清洗第一储槽122-1。在一个更进一步的实施例中,控制装置140会在所述清洗储槽作业完成之后指示供应装置120的补充装置将补充液(即处理液)填充至经清洗过的第一储槽122-1内,并透过供应装置120的循环管路和控温器而将被补充到第一储槽122-1内的处理液的温度维持在特定温度范围内。In addition, further variations of the method are also possible. For example, in one embodiment, the
虽然前文已为提供对于本发明实施例的通盘了解而详述许多细节,然而,熟习本发明所属技术领域中的通常知识者应可明显看出,于实施本发明的其他一或多个实施例时并不一定要包含述于前文中的所有细节。此外,应可识出,于本说明书中对一实施例、一个实施例或者第几实施例及其他诸如此类者的描述,旨在指出以所述方式实施本发明时可能具有的特定特征、结构或特性。另,于本文中,有时是将许多特征集合在单一个实施例、图式或对所述实施例或图式的说明内容当中,这么做只是为了使说明流畅并更有助于了解本发明的各种面向。应可识出,当实施本发明时,只要适宜,来自一个实施例的一或多个特征或具体细节是有可能与来自另一个实施例的一或多个特征或具体细节一起被实施。Although many details have been described above in order to provide a general understanding of the embodiments of the present invention, it should be apparent to those of ordinary skill in the art to which the present invention pertains that other embodiments of the present invention may be implemented in one or more other embodiments. It is not necessary to include all the details described in the preceding paragraphs. Furthermore, it should be appreciated that descriptions in this specification of an embodiment, an embodiment or embodiments, and the like, are intended to indicate specific features, structures, or the like that may be present when the invention is implemented in the described manner. characteristic. In addition, in this document, many features are sometimes grouped together in a single embodiment, figure, or the description of the embodiment or figure, and this is done only to simplify the description and to help the understanding of the present invention. various aspects. It will be recognized that, where appropriate, one or more features or specific details from one embodiment may be implemented with one or more features or specific details from another embodiment when implementing the invention, as appropriate.
虽然前文是借由示范实施例来说明本发明,但应了解本发明并不仅限于前文所述的实施例,本发明应涵盖所有落于本发明的精神与最广义解释的范畴中的所有设计,包含落于本发明的精神与最广义解释的范畴中的所有变化及等效设计。Although the foregoing describes the present invention by way of exemplary embodiments, it should be understood that the present invention is not limited to the foregoing embodiments, and that the present invention covers all designs falling within the spirit and broadest interpretation of the present invention, All modifications and equivalent designs falling within the spirit and broadest interpretation of the invention are included.
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