CN111320862A - Film for flexible circuit board and preparation method thereof - Google Patents
Film for flexible circuit board and preparation method thereof Download PDFInfo
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- CN111320862A CN111320862A CN202010279632.1A CN202010279632A CN111320862A CN 111320862 A CN111320862 A CN 111320862A CN 202010279632 A CN202010279632 A CN 202010279632A CN 111320862 A CN111320862 A CN 111320862A
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2371/00—Characterised by the use of polyethers obtained by reactions forming an ether link in the main chain; Derivatives of such polymers
- C08J2371/08—Polyethers derived from hydroxy compounds or from their metallic derivatives
- C08J2371/10—Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
- C08J2371/12—Polyphenylene oxides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2483/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
- C08J2483/04—Polysiloxanes
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2237—Oxides; Hydroxides of metals of titanium
- C08K2003/2241—Titanium dioxide
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/013—Fillers, pigments or reinforcing additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/32—Phosphorus-containing compounds
Abstract
The application aims to overcome the defects of the prior art and discloses a film for a flexible circuit board and a preparation method thereof, and the copper-clad plate prepared from the film has the advantages of extremely low high-frequency dielectric loss performance, excellent temperature resistance, good processability and the like. The formula comprises the following components in parts by weight: 40 to 94.9 percent of polyphenyl ether, 0.1 to 10 percent of organic silicon resin and 0.1 to 50 percent of inorganic filler.
Description
Technical Field
The invention relates to the field of film materials, and is applied to a flexible circuit board.
Background
With the continuous improvement of the computing performance of the chip, the circuit board is required to have lower delay for high-speed signal transmission. According to the law of physics, signals are transmitted in the material, and energy loss is increased along with the increase of frequency. At present, the 4G communication frequency is still lower than 3GHz, china already opens new frequency bands for 5G application, namely 3.3-3.6 GHz and 4.8-5 GHz, the future 5G technology advances the millimeter wave technology, and will face signal transmission above 30GHz, and the transmission loss will be much higher than the current 4G frequency band, so that the corresponding radio frequency connecting line and antenna soft board will face performance challenges. The requirements of high frequency and high speed circuits include the speed and quality of the transmitted signals. The main factors influencing the two terms are the electrical properties of the transmission material, including dielectric constant and dielectric loss, and specifically, the speed of signal transmission is inversely related to dielectric constant, and the signal quality is inversely related to dielectric loss.
Polyimide and industrialized liquid crystal polymer are used in the circuit board film of the 5G communication equipment on the market at present. However, the polyimide film was found to have a large dielectric loss at high frequency transmission. The industrial liquid crystal polymer is difficult to process during film forming, cannot be processed by a normal casting film machine (belonging to equipment known in the field), mostly adopts an emulsion film forming process, and has the defects of insufficient productivity, low yield and environmental friendliness.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and discloses a film for a flexible circuit board and a preparation method thereof.
The technical scheme provided by the invention is as follows:
the film for the flexible copper clad laminate is characterized by comprising the following components in parts by weight:
40 to 94.9 percent of polyphenyl ether
0.1 to 10 percent of organic silicon resin
0.1 to 50 percent of inorganic filler
The molecular formula of the organic silicon resin is as follows: (RSiO)1.5)m(E2SiO)n(R2SiO)p(ESiO1.5)qIn the formula: r is phenyl, E is methyl, m ═ 1, 2, 3, 4, or 5; n is 1, 2, 3, 4 or 5; p ═ 1, 2, 3, 4, or 5; q is 1, 2, 3, 4 or 5.
The organic silicon resin is obtained by purchasing, and the product is a water-soluble dispersion liquid which is formed by hydrolyzing and polycondensing a chlorosilane mixture to form a polysiloxane high-molecular prepolymer with a highly-crosslinked network structure and emulsifying the polysiloxane high-molecular prepolymer at a high speed by an emulsifier, so that the organic silicon resin has the characteristics of organic resin and inorganic materials.
The inorganic filler comprises one or more of various plastic processing aid inorganic fillers, antioxidant inorganic fillers, stabilizer inorganic fillers, mold release agent inorganic fillers, inorganic phosphorus compound inorganic fillers, halogen-containing or halogen-free flame retardant inorganic fillers, titanium dioxide, alumina inorganic fillers, kaolin and talcum powder.
The film processing equipment and the process are as follows:
a film production line (common equipment in the field) utilizing a double-screw extruder mainly comprises a double-screw extruding device, a stretching device and a drafting and winding device. According to the formula of the composition designed by taking the polyphenyl ether as the main material, the materials are weighed according to the weight proportion, are premixed in a mixer, then the premixed material is added into a double-screw extruder through an automatic feeder, and the polyphenyl ether resin film can be directly extruded through a unidirectional stretching device and drafting and winding. The twin-screw extruder device is a twin-screw extruder with SK26L/D of 48 (figure 1), and comprises a twin-screw component configuration, a feeding port, an exhaust port and the like which are arranged in a charging barrel, and the processing technology relates to the setting of the processing temperature of the charging barrel in each zone and the torque parameters of the extruder.
The first stage is as follows: the material enters a double-screw extruder from a feeding port shown in figure 1, passes through a feeding zone, a melting zone, an exhaust zone and a pressurizing metering zone, and then passes through a stretching device and a drafting, winding and tape-casting film. Wherein zones 0 and 1 are the feed zones shown in FIG. 1, zones 2 and 3 are the melting zones, zones 4, 5 and 6 are the vent zones, and zones 7, 8, 9 and 10 are the metering zones under pressure. The processing temperature of the material barrel in each area is set as shown in figure 2 and respectively comprises the following steps: 50. 200, 300, 310, 300 degrees celsius.
During processing, the melt temperature and the casting film forming property results of the materials in the extruder are measured as follows under different extruder torque ratios:
| torque ratio of extruder | Temperature of material melt | Tape casting film forming |
| 80％ | 320C | Is poor |
| 90％ | 340C | Optimization of |
| 95％ | 350C | In general |
Through further study, it was found that the polyphenylene ether was processed in an extruderControlling the temperature of the melt at 340 DEG CAnd has the best processing performance.
Second and third stages: as an example, the temperature of a first stage cold roll is set to 160C by a stretching device, the rotating speed of a second stage roll shaft is set to 1.8, and the stretching and winding are carried out, so that a film product with the width of 200mm and the thickness of 100 mu m is produced.
The technical scheme of the invention has the following design principles and beneficial effects:
polyphenylene ether resin films are suitable for flexible wiring board materials used in high-frequency electronic devices because polyphenylene ether resins have good high-frequency characteristics such as low dielectric constant, low dielectric loss, and the like. However, polyphenylene ether resins have the disadvantage that they are poor in moldability and therefore cannot be used alone, and conventional methods are often only used in a completely compatible mannerPolystyrene-based resinThe mixture of (1) is used. However, polystyrene-based resins are more fluid than polyphenylene ether-based resins, and their incorporationThe film forming property and the heat resistance of the polyphenyl ether resin are reduced, and the processing requirement of the flexible copper clad laminate can not be met.
Therefore, the system design principle of the invention is as follows: the main material adopts polyphenyl ether resin as the main material, the biggest advantages of the polyphenyl ether resin are that the polyphenyl ether resin can provide low dielectric constant and low dielectric loss, and the polyphenyl ether resin meets the processing characteristics of flexible copper clad laminate materials, and the circuit board manufactured by the polyphenyl ether resin not only meets the requirements of the existing high-frequency high-speed circuit board, but also brings possibility for the development of more 5G products in the future due to low density and high flame retardant property; meanwhile, the organic silicon resin is adopted to replace the traditional oneA polystyrene-based resin,the polyphenyl ether resin has the characteristics of organic resin and inorganic material, can be cured at high temperature, has good dielectric property, and a cured product thereof has good circuit board processability, makes up processing defects generated in the processing process of polyphenyl ether, and can improve the heat resistance, peeling strength and the like of a board; in addition, the flame retardant capability can be improved by adding inorganic filler, such as selected inorganic phosphorus compounds, and the expansion coefficient can be reduced by inorganic fillers such as titanium dioxide, alumina, kaolin, talcum powder and the like, so that the heat resistance is improved.
The process conditions are as follows: the polyphenyl ether has high heat resistance, the thermal decomposition temperature reaches 350 ℃, and no obvious thermal degradation phenomenon exists within 300 ℃. In general, during modification processing of polyphenylene oxide, polyethylene resin is added into a system, the temperature of a cylinder is controlled to be 260-290 ℃, and the temperature of a die (outlet of an extruder) is lower than the temperature of the cylinder by about 10 ℃. Due to the fact thatPolyphenylene etherThe fluidity of the modified polypropylene is poor, and the modified polypropylene cannot be directly modified in a double-screw extruder. According to the invention, the processing of the polyphenyl ether in the double-screw extruder is researched by adopting the formula, and the result shows that the materials are mixedWhen the barrel temperature is set to 300-310 ℃, the torque of the extruder is more than 80%The organic silicon resin with a specific structure and the polyphenyl ether resin are fused, and groups containing unsaturated hydrocarbon bonds in siloxane in the organic silicon resin are combined with polyphenyl ether molecular units to form an intermolecular nano-scale crosslinked network structure, so that the flow property of the polyphenyl ether is greatly improved. At the moment, the inorganic filler can be fully dispersed in the system, and the optimal modification performance is obtained. It is further disclosed that a certain ratio is addedThe titanium dioxide can adjust the dielectric constant of the polyphenyl ether composition, but the viscosity of the polyphenyl ether during processing is greatly increased due to the addition of the titanium dioxide, so that a local over-shearing phenomenon is easily formed. Especially, when the content of the titanium dioxide exceeds a certain level, a large amount of black spots can be generated on the common polyvinyl polyphenyl ether film. The black spots can reduce the tearing strength of the downstream copper-clad process and can also cause short circuit when the circuit is etched. In the composition, siloxane forms a nano-scale cross-linked network structure, so that the fluidity of polyphenyl ether can be increased, the viscosity of polyphenyl ether during processing is greatly reduced, and the dispersion of titanium dioxide is facilitated. After the high-content titanium dioxide is added into the formula combination provided by the invention, black spots cannot be generated, the dielectric constant of the film material can be adjusted at will on a communication frequency band from 2.75GHz to 3.9GHz, and the requirement on the diversity of circuit board design is met. Similarly, due to the stable structure of the carbon-oxygen-ether bond in the polyphenylene oxide molecule, the polyphenylene oxide needs extremely high energy to decompose, so that the polyphenylene oxide has very strong flame retardance and can reach the UL94V-2@3.2mm grade. The organic silicon resin is characterized by organic resin and inorganic material, the polar group containing oxygen atoms is combined with the inorganic phosphorus flame retardant, and the unsaturated hydrocarbon bond group is combined with the polyphenylene oxide molecular unit, so that the composition has strong anti-dripping property during a film burning test, and the film of the composition is ensured to reach the UL94VTM-0 grade.
Further research also finds that better flame retardant property can be achieved by adding a small amount of inorganic flame retardant into the system.
The film is directly formed by a film production line of the double-screw extruder, so that the processing steps and the manufacturing cost are saved. Meanwhile, the common single-screw film production line has the technology that the film can be produced only by pretreating the raw materials, so that the possible quality process defects are avoided, and the film forming efficiency is improved.
The invention is applied as follows:
the substrate material prepared by the film can be used for manufacturing flexible circuit boards and can be widely applied to electronic products such as mobile phones, digital cameras, digital video cameras, automobile satellite direction positioning devices, liquid crystal televisions, notebook computers and the like.
Drawings
FIG. 1 shows a twin-screw extruder with a twin-screw extruder SK26L/D of 48.
Fig. 2 is a barrel processing temperature setting in the first stage.
Detailed Description
The technical solutions provided in the present application will be further described with reference to the following specific embodiments and accompanying drawings. The advantages and features of the present application will become more apparent in conjunction with the following description.
It should be noted that the embodiments of the present application have a better implementation and are not intended to limit the present application in any way. The technical features or combinations of technical features described in the embodiments of the present application should not be considered as being isolated, and they may be combined with each other to achieve a better technical effect. The scope of the preferred embodiments of this application may also include additional implementations, and this should be understood by those skilled in the art to which the embodiments of this application pertain.
Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate. In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values.
The drawings in the present application are in simplified form and are not to scale, but rather are provided for convenience and clarity in describing the embodiments of the present application and are not intended to limit the scope of the application. Any modification of the structure, change of the ratio or adjustment of the size of the structure should fall within the scope of the technical disclosure of the present application without affecting the effect and the purpose of the present application. And the same reference numbers appearing in the various drawings of the present application designate the same features or components, which may be employed in different embodiments.
Example 1
Using the following formulation table, a polyphenylene ether resin film A (invention) and a resin film B (general modified polyphenylene ether resin film) having a width of 200mm and a thickness of 100 μm were obtained by controlling the melt temperature at 340 ℃ through an extrusion film line with a torque of 90% set
The resin film A comprises the following components:
| chemical name | Specification of purchase | Weight fraction |
| Polyphenylene ether | Lanxing LXR040 | 70％ |
| Silicone resin | Nanjing Peiping micro MS0825 | 10％ |
| Inorganic filler | Kemu titanium dioxide R-101 | 20％ |
The resin film B comprises the following components:
| chemical name | Specification of purchase | Weight fraction |
| Polyphenylene ether | Lanxing LXR040 | 70％ |
| Polystyrene | Ningbo tabled GP535N | 10％ |
| Inorganic filler | Kemu titanium dioxide R-101 | 20％ |
Then, 5 samples of the resin film A and the resin film B are respectively taken for physical property detection, and the following results are obtained:
wherein the thermal deformation temperature of the resin A is more than 180 ℃, and the temperature for production and processing of downstream manufacturers of the flexible copper-clad plate can be met. And the B resin film cannot meet the processing requirement of more than 180 ℃.
The electrical properties of the polyphenylene ether resin film A obtained in example 1 were compared with those of a commercially available modified polyimide PI film, and the following results were obtained:
| strip line resonant cavity method | Polyimide film | Polyphenylene ether resin film A |
| Dielectric constant @1G Hz | 3.5 | 3.5 |
| Dielectric loss @1G Hz | 0.008 | 0.002 |
| Dielectric constant @1.9G Hz | 3.5 | 3.5 |
| Dielectric loss @1.9G Hz | 0.009 | 0.002 |
| Dielectric constant @3G Hz | 3.5 | 3.5 |
| Dielectric loss @3G Hz | 0.01 | 0.002 |
| Dielectric constant @10G Hz | 3.5 | 3.5 |
| Dielectric loss @10 GHz | 0.05 | 0.002 |
| Dielectric constant @14G Hz | 3.5 | 3.5 |
| Dielectric loss @14G Hz | 0.13 | 0.002 |
It can be seen that the dielectric constant of the polyimide resin film does not change as the frequency increases, but the dielectric loss increases sharply, meaning that there is a great information delay in communication. The polyphenylene ether resin film A of the present invention has no change in dielectric loss with an increase in frequency, and still maintains a high transmission effect.
Example 2
A polyphenylene ether resin film C (invention) and a resin film D (general modified polyphenylene ether resin film) having a width of 200mm and a thickness of 100 μm were obtained by setting a torque of 90% by an extrusion film line using the following formulation tables and controlling a melt temperature at 340 deg.C
Resin film C component:
| chemical name | Specification of purchase | Weight fraction |
| Polyphenylene ether | Lanxing LXR040 | 94.9％ |
| Silicone resin | Nanjing Peiping micro MS0825 | 2.1％ |
| Inorganic phosphorus compound | PX220 for Wansheng Zhejiang | 3％ |
Resin film D component:
the resin films C and D were subjected to a flame retardancy test of UL94 soft film type plastics (film thickness <0.25mm), and the results were as follows according to ASTM D4804-03:
it can be seen that the resin C can pass through UL94 by only adding a small amount of inorganic phosphorus compound
VTM-0 rating test, while resin D added more compounds to make the average burning time less than 10 seconds, but because its system contains polyvinyl resin, there was no ability to prevent the sample from dripping during the burning test, therefore, 5 times of dripping phenomenon in 10 samples can only reach UL94VTM-1 rating. The flame retardant requirement of the flexible copper clad laminate on the base film cannot be met.
Example 3
Using the following formulation table, a torque of 90% was set by an extrusion film line, and a melt temperature was controlled at 340 ℃ to obtain a polyphenylene ether resin film E (invention) having a width of 200mm and a thickness of 100 μm
Resin film E component:
it can be seen that films with different dielectric constants can be obtained along with different titanium dioxide content, so that the transmission of signals with different frequencies is met, and the polyphenyl ether resin film has no change in dielectric loss of signals with different frequencies, and still maintains high-efficiency transmission effect.
Claims (5)
1. The film for the flexible copper clad laminate is characterized by comprising the following components in parts by weight:
40 to 94.9 percent of polyphenyl ether
0.1 to 10 percent of organic silicon resin
0.1 to 50 percent of inorganic filler
2. The film for the flexible copper clad laminate according to claim 1, wherein the molecular formula of the silicone resin is: (RSiO)1.5)m(E2SiO)n(R2SiO)p(ESiO1.5)qIn the formula: r is phenyl, E is methyl, m ═ 1, 2, 3, 4, or 5; n is 1, 2, 3, 4 or 5; p ═ 1, 2, 3, 4, or 5; q is 1, 2, 3, 4 or 5.
3. The film for the flexible copper clad laminate according to claim 1, wherein the inorganic filler comprises one or more of various plastic processing aid inorganic fillers, antioxidant inorganic fillers, stabilizer inorganic fillers, mold release agent inorganic fillers, inorganic phosphorus compound inorganic fillers, halogen-containing or halogen-free flame retardant inorganic fillers, titanium dioxide, alumina inorganic fillers, kaolin and talc.
4. A method for preparing a film for a flexible copper-clad plate is characterized by comprising the following steps
The first stage is as follows: the material enters a double-screw extruder from a feeding port, passes through a feeding area, a melting area, an exhaust area and a pressurizing and metering area, and then passes through a stretching device and a drafting and winding tape casting to form a film, wherein the area 0 and the area 1 are the feeding area, the area 2 and the area 3 are the melting area, the area 4, the area 5 and the area 6 are the exhaust area, the area 7, the area 8, the area 9 and the area 10 are the pressurizing and metering areas, the processing temperature of a charging barrel in each area is set as follows: 50. 200, 300, 310, 300 degrees celsius.
5. The method as claimed in claim 4, wherein the melt temperature of the polyphenylene ether in the extruder is controlled at 340 ℃ to give the polyphenylene ether having the optimum processability.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202010279632.1A CN111320862A (en) | 2020-04-10 | 2020-04-10 | Film for flexible circuit board and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010279632.1A CN111320862A (en) | 2020-04-10 | 2020-04-10 | Film for flexible circuit board and preparation method thereof |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040235993A1 (en) * | 2001-09-14 | 2004-11-25 | Kazuo Yoshida | Polyphenylene ether composition |
| JP2005057000A (en) * | 2003-08-01 | 2005-03-03 | Asahi Kasei Chemicals Corp | Film for flexible printed circuit board |
| JP2008195741A (en) * | 2007-02-08 | 2008-08-28 | Asahi Kasei Chemicals Corp | Polyphenylene ether-based resin film for electric insulation |
| CN104650574A (en) * | 2015-02-10 | 2015-05-27 | 郴州功田电子陶瓷技术有限公司 | Polyphenyl ether copper-clad laminate composition |
| CN105802186A (en) * | 2016-03-18 | 2016-07-27 | 重庆市锦艺硅材料开发有限公司苏州分公司 | Packing and resin composition for copper-clad laminate and application of packing and resin composition in copper-clad laminate |
| CN106609030A (en) * | 2015-10-21 | 2017-05-03 | 广东生益科技股份有限公司 | Polyphenylene oxide resin composition and application of same to high-frequency circuit base board |
| CN109694523A (en) * | 2017-10-20 | 2019-04-30 | 中国石油化工股份有限公司 | A kind of low VOC Low-odor polypropylene resin composition and preparation method thereof |
| US20190291364A1 (en) * | 2018-03-22 | 2019-09-26 | Rogers Corporation | Melt processable thermoplastic composite comprising a multimodal dielectric filler |
-
2020
- 2020-04-10 CN CN202010279632.1A patent/CN111320862A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040235993A1 (en) * | 2001-09-14 | 2004-11-25 | Kazuo Yoshida | Polyphenylene ether composition |
| JP2005057000A (en) * | 2003-08-01 | 2005-03-03 | Asahi Kasei Chemicals Corp | Film for flexible printed circuit board |
| JP2008195741A (en) * | 2007-02-08 | 2008-08-28 | Asahi Kasei Chemicals Corp | Polyphenylene ether-based resin film for electric insulation |
| CN104650574A (en) * | 2015-02-10 | 2015-05-27 | 郴州功田电子陶瓷技术有限公司 | Polyphenyl ether copper-clad laminate composition |
| CN106609030A (en) * | 2015-10-21 | 2017-05-03 | 广东生益科技股份有限公司 | Polyphenylene oxide resin composition and application of same to high-frequency circuit base board |
| US20180215971A1 (en) * | 2015-10-21 | 2018-08-02 | Shengyi Technology Co., Ltd. | Polyphenyl ether resin composition and use thereof in high-frequency circuit substrate |
| CN105802186A (en) * | 2016-03-18 | 2016-07-27 | 重庆市锦艺硅材料开发有限公司苏州分公司 | Packing and resin composition for copper-clad laminate and application of packing and resin composition in copper-clad laminate |
| CN109694523A (en) * | 2017-10-20 | 2019-04-30 | 中国石油化工股份有限公司 | A kind of low VOC Low-odor polypropylene resin composition and preparation method thereof |
| US20190291364A1 (en) * | 2018-03-22 | 2019-09-26 | Rogers Corporation | Melt processable thermoplastic composite comprising a multimodal dielectric filler |
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Application publication date: 20200623 |