CN111318520A - Vacuum plasma treatment equipment and treatment cavity thereof - Google Patents

Vacuum plasma treatment equipment and treatment cavity thereof Download PDF

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Publication number
CN111318520A
CN111318520A CN202010318150.2A CN202010318150A CN111318520A CN 111318520 A CN111318520 A CN 111318520A CN 202010318150 A CN202010318150 A CN 202010318150A CN 111318520 A CN111318520 A CN 111318520A
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CN
China
Prior art keywords
cavity
electrode
vacuum plasma
plasma processing
processing apparatus
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Pending
Application number
CN202010318150.2A
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Chinese (zh)
Inventor
刘善石
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Kunshan Suncola Mechanical And Electronic Technology Co ltd
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Kunshan Suncola Mechanical And Electronic Technology Co ltd
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Priority to CN202010318150.2A priority Critical patent/CN111318520A/en
Publication of CN111318520A publication Critical patent/CN111318520A/en
Pending legal-status Critical Current

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00Accessories or details of general applicability for machines or apparatus for cleaning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The invention discloses a vacuum plasma processing device and a processing cavity thereof, comprising an air cylinder, an upper cavity and a lower cavity, wherein the upper cavity is internally provided with a first cavity, the inner side wall of the first cavity is provided with a mirror surface stainless steel shield, the lower cavity is internally provided with a second cavity, the second cavity is internally provided with an electrode, the upper side and the side surface of the electrode are provided with insulating sheets, the lower end of the electrode is provided with an insulating bottom plate, the air cylinder is connected with the upper cavity, the air cylinder drives the upper cavity to slide up and down, and the lower end of the electrode is connected with an electrode feed-in piece. The damage probability that secondary pollution and batch type cleaning can occur is reduced.

Description

Vacuum plasma treatment equipment and treatment cavity thereof
Technical Field
The invention relates to the technical field of plasma treatment, in particular to vacuum plasma treatment equipment and a treatment cavity thereof.
Background
A vacuum plasma cleaning process is a plasma surface treatment process which is characterized in that high-energy disordered plasma is generated in a vacuum cavity under a certain pressure condition through an electrode, and a cleaned product, namely the surface of an object, is bombarded by the plasma so as to achieve the cleaning purpose.
Semiconductor substrates, lead frames, and integrated circuit boards are produced in various stages of the semiconductor manufacturing process, and during the manufacturing process, vacuum plasma surface treatment equipment is often used to clean the surfaces. Therefore, these products are common objects for vacuum plasma cleaning.
The existing vacuum plasma cleaning machine is of a single machine type, cannot be in butt joint with upper and lower section processing equipment, and needs to carry products back and forth in the whole production process. The product cannot be tracked and the production information cannot be monitored during production, so that the product is easily damaged and the material is easily lost in the production and transportation processes, the production cost is increased, time and labor are wasted, and the floor area of the whole production line equipment is increased; and the vacuum box body is composed of a cavity and an electrode plate, so that the surface of an object to be processed is easily damaged or polluted twice in normal cleaning work, and the processing yield is influenced.
Disclosure of Invention
In order to overcome the defects, the invention provides vacuum plasma processing equipment and a processing cavity thereof, which can reduce secondary pollution and possible damage probability of batch type cleaning.
The technical scheme adopted by the invention for solving the technical problem is as follows: the utility model provides a vacuum plasma treatment equipment and handle cavity thereof, includes cavity and cavity down, the internal first cavity that is equipped with of epicoele is equipped with mirror surface stainless steel guard shield on the inside wall of first cavity, the internal second cavity that is equipped with of cavity down, be equipped with the electrode in the second cavity, the top and the side of electrode are equipped with the insulating piece, and the lower extreme of electrode sets up insulating bottom plate, the electrode feed-in piece is connected to the lower extreme of electrode.
As a further improvement of the invention, the lifting device for the upper cavity of the vacuum pump further comprises a cavity lifting device, wherein the cavity lifting device is connected with the upper cavity, the cavity lifting device drives the upper cavity to slide up and down, the cavity lifting device is a cylinder, the upper end of the upper cavity is provided with a cylinder connecting piece, the cylinder connecting piece is connected with a cylinder main shaft, and the cylinder drives the upper cavity to vertically move up and down through the cylinder connecting piece.
As a further improvement of the invention, an external gas inlet is arranged on the first cavity, a gas flowmeter is arranged at the external gas inlet, and a vacuum pumping hole is arranged on the second cavity.
As a further improvement of the invention, the two sides of the lower cavity are provided with positioning guide rails, the middle of the lower cavity is provided with a plurality of adjusting guide rails, the adjusting guide rails are arranged on the lower cavity in a sliding way through sliding grooves arranged on the lower cavity, a transmission rail capable of placing electrodes is formed between the adjusting guide rails and the positioning guide rails, and photoelectric sensors are arranged at the feeding end and the discharging end of the transmission rail.
As a further improvement of the invention, an electrode feed-in insulator is arranged at the joint of the electrode and the electrode feed-in piece.
As a further improvement of the invention, a dovetail groove is arranged on the periphery of the upper surface of the lower cavity, and a sealing ring is embedded in the dovetail groove, so that the upper cavity and the lower cavity are in sealing connection.
As a further improvement of the invention, the cylinder is fixed on a fixed plate above the upper cavity, the fixed plate is fixed on the frame, a linear shaft sleeve is arranged below the fixed plate, a guide shaft inserted into the linear shaft sleeve is correspondingly arranged on the upper cavity, and the linear shaft sleeve and the guide shaft are matched to ensure the precision and the stability during lifting.
As a further improvement of the invention, the insulating sheet is a ceramic sheet, and the thickness of the insulating sheet is smaller than that of the insulating base plate.
As a further improvement of the invention, the side edges of the upper cavity and the lower cavity are respectively provided with one or more connecting blocks which are mutually matched in a sealing way, the connecting blocks at the side edge of the lower cavity are provided with metal mesh belt grooves, metal mesh belts are arranged in the metal mesh belt grooves, and the upper cavity and the lower cavity are tightly connected through the metal mesh belts.
As a further improvement of the invention, two interfaces are arranged on the upper cavity, the lower cavity or a pipeline connected with the vacuum pumping hole, one interface is connected with a vacuum gauge, the other interface is a gap, and the gap is connected with external ventilation equipment.
The invention has the beneficial effects that: the vacuum plasma processing equipment and the processing cavity thereof have wide application range, can be widely used for erecting processing requirements of assembly line manufacturing equipment such as semiconductors, cameras, fingerprint modules and the like, adopt the structure of the upper cavity and the lower cavity, arrange the insulating layer around the lower electrode, cause damage or secondary pollution on the surface of an object to be processed, and reduce the possibility of secondary pollution and possible damage in batch type cleaning.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a side view of one of the structures of the present invention;
FIG. 3 is a second side view of the structure of the present invention;
FIG. 4 is an enlarged view of portion A of FIG. 3;
FIG. 5 is an enlarged schematic view of the connector block of the present invention;
the following are marked in the figure: 1-a cylinder; 2-upper cavity; 3-lower cavity; 4-a first cavity; 5-mirror surface stainless steel shield; 6-a second cavity; 7-an electrode; 8-insulating sheets; 9-an insulating base plate; 10-an electrode feedthrough; 11-a cylinder connection; 12-a cylinder main shaft; 13-external gas inlet; 14-vacuum pumping hole; 15-positioning the guide rail; 16-adjusting the guide rail; 17-a chute; 18-electrode feed insulation; 19-fixing the plate; 20-a linear shaft sleeve; 21-a guide shaft; 22-connecting block; 23-Metal mesh with grooves.
Detailed Description
For the purpose of enhancing the understanding of the present invention, the present invention will be further described in detail with reference to the following examples and the accompanying drawings, which are only used for explaining the present invention and are not to be construed as limiting the scope of the present invention.
Fig. 1 to 4 show an embodiment of a vacuum plasma processing apparatus and a processing chamber thereof according to the present invention, the vacuum plasma processing apparatus and the processing chamber thereof include an upper chamber 2 and a lower chamber 3, a first chamber 4 is provided in the upper chamber 2, a mirror surface stainless steel shield 5 is provided on an inner side wall of the first chamber 4, a second chamber 6 is provided in the lower chamber 3, an electrode 7 is provided in the second chamber 6, insulating sheets 8 are provided above and on a side surface of the electrode 7, an insulating base plate 9 is provided at a lower end of the electrode 7, and a lower end of the electrode 7 is connected to an electrode feed-in member 10.
Still include a cavity elevating gear 1, cavity elevating gear 1 is connected with last cavity 2, and cavity elevating gear 1 drives cavity 2 and slides from top to bottom, cavity elevating gear 1 is the cylinder, the upper end of going up cavity 2 is equipped with cylinder connecting piece 11, cylinder connecting piece 11 is connected with cylinder main shaft 12, and the cylinder passes through cylinder connecting piece 11 and drives cavity 2 vertical motion from top to bottom.
An external gas inlet 13 is formed in the first cavity 3, a gas flowmeter is arranged at the external gas inlet 13, and a vacuum pumping hole 14 is formed in the second cavity 6.
Two sides of the lower cavity 3 are provided with positioning guide rails 15, the middle of the lower cavity is provided with a plurality of adjusting guide rails 16, the adjusting guide rails 16 are arranged on the lower cavity 3 in a sliding mode through sliding grooves 17 formed in the lower cavity 3, a transmission rail capable of containing the electrodes 7 is formed between the adjusting guide rails 16 and the positioning guide rails 15, and photoelectric sensors are arranged at the feeding end and the discharging end of the transmission rail.
The connection between the electrode 7 and the electrode feedthrough 10 is provided with an electrode feedthrough insulator 18.
The periphery of the upper surface of the lower cavity 3 is provided with a dovetail groove, and a sealing ring 1 is embedded in the dovetail groove, so that the upper cavity 2 and the lower cavity 3 are in sealing connection.
The cylinder 1 is fixed on a fixing plate 19 above the upper cavity 2, the fixing plate 19 is fixed on the rack, a linear shaft sleeve 20 is arranged below the fixing plate 19, a guide shaft 21 inserted into the linear shaft sleeve is correspondingly arranged on the upper cavity 2, and the linear shaft sleeve 20 is matched with the guide shaft 21 to ensure the precision and stability during lifting.
Insulating piece 8 is the ceramic wafer, and insulating piece 8's thickness is less than insulating bottom plate 9.
As shown in fig. 5, the side edges of the upper cavity 2 and the lower cavity 3 are respectively provided with one or more connecting blocks 22 which are in sealing fit with each other, the connecting block 22 on the side edge of the lower cavity 3 is provided with a metal mesh belt groove 23, a metal mesh belt is arranged in the metal mesh belt groove 23, and the upper cavity 2 and the lower cavity 3 are tightly connected through the metal mesh belt.
Two interfaces are arranged on the upper cavity 2, the lower cavity 3 or a pipeline connected with the vacuum pumping hole 14, one interface is connected with a vacuum gauge, the other interface is a cavity breaking hole, and the cavity breaking hole is connected with external ventilation equipment.
The processing procedure and principle of the plasma processing apparatus in this embodiment:
1: the system automatically carries materials to a material transmission guide rail on a lower cavity 3 in the cavity, and when all carrying actions are completed and photoelectric sensors at the feeding and discharging ends of all cavities are not shielded by the materials, the cavity lifting device 1, namely the cylinder, executes the descending action of the upper cavity.
2: the upper surface of the lower cavity 3 is provided with a dovetail groove sealing ring, and when the upper cavity and the lower cavity are closed, a sealing cavity is formed. Meanwhile, the two cavities are completely linked through the connecting blocks of the upper cavity and the lower cavity, so that better work and stability of the plasma power supply are ensured, and the equipment starts to perform cleaning work such as evacuation and the like.
3: after the cleaning work is finished, the interface connected with the cavity breaking port is filled with air or pure gas to break the vacuum state of the sealed cavity after the materials are cleaned.
4: after the inside of the sealed cavity is completely broken, the cavity lifting device 1 executes the lifting action of the upper cavity 2.
When the plasma power supply works, energy is transmitted to the electrode 7 through the electrode feed-in piece 10, the lower part and the peripheral insulating bottom plate 9 are thicker, so that the electrode plate is ensured not to discharge to the bottom or the periphery of the lower cavity 3, the insulating sheet on the upper part of the electrode 7 is thinner, and the dielectric of the upper cavity is discharged through the insulating sheet, so that plasma is generated.
Because plasma consumption can be fast, the mirror surface stainless steel plate is adopted in the cavity 2, and the plasma can be refracted, so that the plasma concentration in the cavity is improved, and a better treatment effect is achieved.
Because the inside mirror surface stainless steel board that adopts of last cavity can produce refraction effect to plasma, and mirror surface stainless steel board density is higher simultaneously, so can not produce dust or other impurity because of plasma bombardment surface to can not pollute the product.
The insulating sheet 8 on the lower cavity 3 is made of high-density insulating materials such as ceramic or glass, and the surface is guaranteed to be more resistant to plasma.

Claims (10)

1. A vacuum plasma processing device and a processing cavity thereof are characterized in that: including last cavity (2) and lower cavity (3), upward be equipped with first cavity (4) in cavity (2), be equipped with mirror surface stainless steel guard shield (5) on the inside wall of first cavity (4), be equipped with second cavity (6) in cavity (3) down, be equipped with electrode (7) in second cavity (6), the top and the side of electrode (7) are equipped with insulating piece (8), and the lower extreme of electrode (7) sets up insulating bottom plate (9), electrode feed-in piece (10) is connected to the lower extreme of electrode (7).
2. The vacuum plasma processing apparatus and the processing chamber thereof according to claim 1, wherein: still include a cavity elevating gear (1), cavity elevating gear (1) is connected with last cavity (2), and cavity elevating gear (1) drives cavity (2) and slides from top to bottom, cavity elevating gear (1) is the cylinder, the upper end of going up cavity (2) is equipped with cylinder connecting piece (11), cylinder connecting piece (11) are connected with cylinder main shaft (12), and the cylinder passes through cylinder connecting piece (11) and drives cavity (2) up-and-down vertical motion.
3. The vacuum plasma processing apparatus and the processing chamber thereof according to claim 1, wherein: the vacuum pump is characterized in that an external gas inlet (13) is formed in the first cavity (3), a gas flowmeter is arranged at the external gas inlet (13), and a vacuum pumping hole (14) is formed in the second cavity (6).
4. The vacuum plasma processing apparatus and the processing chamber thereof according to claim 1, wherein: two sides are equipped with positioning guide rail (15) on cavity (3) down, and the centre is equipped with a plurality of regulation guide rails (16), adjusts guide rail (16) and slides through spout (17) that set up on cavity (3) down and set up under on cavity (3), adjusts and forms the transmission track that can place electrode (7) between guide rail (16) and positioning guide rail (15), is equipped with photoelectric sensor at transmission track's feed end and discharge end.
5. The vacuum plasma processing apparatus and the processing chamber thereof according to claim 1, wherein: an electrode feed-in insulating part (18) is arranged at the joint of the electrode (7) and the electrode feed-in part (10).
6. The vacuum plasma processing apparatus and the processing chamber thereof according to claim 1, wherein: the periphery of the upper surface of the lower cavity (3) is provided with a dovetail groove, and a sealing ring (1) is embedded in the dovetail groove, so that the upper cavity (2) is in sealing connection with the lower cavity (3).
7. The vacuum plasma processing apparatus and the processing chamber thereof according to claim 1, wherein: cavity elevating gear (1) is fixed on fixed plate (19) in last cavity (2) top, fixed plate (19) are fixed in the frame, and fixed plate (19) below is equipped with sharp axle sleeve (20), is equipped with guide shaft (21) that insert sharp axle sleeve on corresponding last cavity (2), precision and stability when sharp axle sleeve (20) and guide shaft (21) cooperation are guaranteed to go up and down.
8. The vacuum plasma processing apparatus and the processing chamber thereof according to claim 1, wherein: insulating piece (8) are the ceramic wafer, and the thickness of insulating piece (8) is less than insulating bottom plate (9).
9. The vacuum plasma processing apparatus and the processing chamber thereof according to claim 1, wherein: go up the side of cavity (2) and lower cavity (3) and be equipped with one or more sealed complex connecting block (22) each other respectively, be equipped with metal mesh groove (23) on connecting block (22) of cavity (3) side down, set up the metal mesh area in metal mesh groove (23), go up cavity (2) and lower cavity (3) and pass through metal mesh area zonulae occludens.
10. The vacuum plasma processing apparatus and the processing chamber thereof according to claim 1, wherein: two interfaces are arranged on the upper cavity (2), the lower cavity (3) or a pipeline connected with the vacuum pumping hole (14), one interface is connected with a vacuum gauge, the other interface is a cavity breaking hole, and the cavity breaking hole is connected with external ventilation equipment.
CN202010318150.2A 2020-04-21 2020-04-21 Vacuum plasma treatment equipment and treatment cavity thereof Pending CN111318520A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010318150.2A CN111318520A (en) 2020-04-21 2020-04-21 Vacuum plasma treatment equipment and treatment cavity thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010318150.2A CN111318520A (en) 2020-04-21 2020-04-21 Vacuum plasma treatment equipment and treatment cavity thereof

Publications (1)

Publication Number Publication Date
CN111318520A true CN111318520A (en) 2020-06-23

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CN202010318150.2A Pending CN111318520A (en) 2020-04-21 2020-04-21 Vacuum plasma treatment equipment and treatment cavity thereof

Country Status (1)

Country Link
CN (1) CN111318520A (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08115936A (en) * 1994-10-18 1996-05-07 Matsushita Electric Ind Co Ltd Plasma cleaning equipment for board
JP2002126675A (en) * 2000-10-30 2002-05-08 Yamato Scient Co Ltd Plasma cleaning apparatus
CN101890414A (en) * 2010-07-12 2010-11-24 中国电子科技集团公司第二研究所 Online plasma cleaner
CN108284284A (en) * 2018-03-22 2018-07-17 珠海宝丰堂电子科技有限公司 Plasma processing and its plasma treatment cavity
CN110833237A (en) * 2019-12-27 2020-02-25 河南先途智能科技有限公司 Plasma environmental protection shoes material treatment facility
CN212264049U (en) * 2020-04-21 2021-01-01 昆山索坤莱机电科技有限公司 Vacuum plasma treatment equipment and treatment cavity thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08115936A (en) * 1994-10-18 1996-05-07 Matsushita Electric Ind Co Ltd Plasma cleaning equipment for board
JP2002126675A (en) * 2000-10-30 2002-05-08 Yamato Scient Co Ltd Plasma cleaning apparatus
CN101890414A (en) * 2010-07-12 2010-11-24 中国电子科技集团公司第二研究所 Online plasma cleaner
CN108284284A (en) * 2018-03-22 2018-07-17 珠海宝丰堂电子科技有限公司 Plasma processing and its plasma treatment cavity
CN110833237A (en) * 2019-12-27 2020-02-25 河南先途智能科技有限公司 Plasma environmental protection shoes material treatment facility
CN212264049U (en) * 2020-04-21 2021-01-01 昆山索坤莱机电科技有限公司 Vacuum plasma treatment equipment and treatment cavity thereof

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